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Gu ZY, Cao JM, Li K, Guo JZ, Wang XT, Zheng SH, Zhao XX, Li B, Li SY, Li WL, Wu XL. 2D Exfoliation Chemistry Towards Covalent Pseudo-Layered Phosphate Framework Derived by Radical/Strain-Synergistical Process. Angew Chem Int Ed Engl 2024; 63:e202402371. [PMID: 38763920 DOI: 10.1002/anie.202402371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 05/07/2024] [Accepted: 05/16/2024] [Indexed: 05/21/2024]
Abstract
2D compounds exfoliated from weakly bonded bulk materials with van der Waals (vdW) interaction are easily accessible. However, the strong internal ionic/covalent bonding of most inorganic crystal frameworks greatly hinders 2D material exfoliation. Herein, we first proposed a radical/strain-synergistic strategy to exfoliate non-vdW interacting pseudo-layered phosphate framework. Specifically, hydroxyl radicals (⋅OH) distort the covalent bond irreversibly, meanwhile, H2O molecules as solvents, further accelerating interlayered ionic bond breakage but mechanical expansion. The innovative 2D laminar NASICON-type Na3V2(PO4)2O2F crystal, exfoliated by ⋅OH/H2O synergistic strategy, exhibits enhanced sodium-ion storage capacity, high-rate performance (85.7 mAh g-1 at 20 C), cyclic life (2300 cycles), and ion migration rates, compared with the bulk framework. Importantly, this chemical/physical dual driving technique realized the effective exfoliation for strongly coupled pseudo-layered frameworks, which accelerates 2D functional material development.
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Affiliation(s)
- Zhen-Yi Gu
- Department of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Jun-Ming Cao
- MOE Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Kai Li
- MOE Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Jin-Zhi Guo
- MOE Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Xiao-Tong Wang
- MOE Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Shuo-Hang Zheng
- MOE Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Xin-Xin Zhao
- Department of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Bao Li
- School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan, 453007, P. R. China
| | - Shu-Ying Li
- Department of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Wen-Liang Li
- Department of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
| | - Xing-Long Wu
- Department of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
- MOE Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, Jilin, 130024, P. R. China
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2
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Zhang L, Wang Y, Chu A, Zhang Z, Liu M, Shen X, Li B, Li X, Yi C, Song R, Liu Y, Zhuang X, Duan X. Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing. Nat Commun 2024; 15:5484. [PMID: 38942769 PMCID: PMC11213932 DOI: 10.1038/s41467-024-49364-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2024] [Accepted: 06/03/2024] [Indexed: 06/30/2024] Open
Abstract
The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures. The obtained heterostructures can be broadly tailored by selecting the coupling layer of interest, and can include perovskites varying from all-inorganic to organic-inorganic hybrid counterparts, individual transition metal dichalcogenides or 2D heterojunctions. The CsPbI2Br/WSe2 heterostructures demonstrate ultrahigh optical gain coefficient, reduced gain threshold and prolonged gain lifetime, which are attributed to the reduced energetic disorder. Accordingly, the self-organized halide perovskite/2D semiconductor heterostructure lasers show highly reproducible single-mode lasing with largely reduced lasing threshold and improved stability. Our findings provide a high-quality and versatile material platform for probing unique optoelectronic and photonic physics and developing further electrically driven on-chip lasers, nanophotonic devices and electronic-photonic integrated systems.
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Affiliation(s)
- Liqiang Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Anshi Chu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, P. R. China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xu Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Chen Yi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Rong Song
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yingying Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiujuan Zhuang
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, Hunan, P. R. China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China.
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3
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Zhang B, Ao Z, Lan X, Zhong J, Zhang F, Zhang S, Yang R, Wang L, Chen P, Wang G, Yang X, Liu H, Cao J, Zhong M, Li H, Zhang Z. Self-Rolled-Up WSe 2 One-Dimensional/Two-Dimensional Homojunctions: Enabling High-Performance Self-Powered Polarization-Sensitive Photodetectors. NANO LETTERS 2024; 24:7716-7723. [PMID: 38848111 DOI: 10.1021/acs.nanolett.4c01745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Mixed-dimensional heterostructures integrate materials of diverse dimensions with unique electronic functionalities, providing a new platform for research in electron transport and optoelectronic detection. Here, we report a novel covalently bonded one-dimensional/two-dimensional (1D/2D) homojunction structure with robust junction contacts, which exhibits wide-spectrum (from the visible to near-infrared regions), self-driven photodetection, and polarization-sensitive photodetection capabilities. Benefiting from the ultralow dark current at zero bias voltage, the on/off ratio and detectivity of the device reach 1.5 × 103 and 3.24 × 109 Jones, respectively. Furthermore, the pronounced anisotropy of the WSe2 1D/2D homojunction is attributed to its low symmetry, enabling polarization-sensitive detection. In the absence of any external bias voltage, the device exhibits strong linear dichroism for wavelengths of 638 and 808 nm, with anisotropy ratios of 2.06 and 1.96, respectively. These results indicate that such mixed-dimensional structures can serve as attractive building blocks for novel optoelectronic detectors.
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Affiliation(s)
- Baihui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Zhikang Ao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Xiang Lan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Jiang Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Fen Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Shunhui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Ruofan Yang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Luyao Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Peng Chen
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Guang Wang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, P. R. China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo 315211, P. R. China
| | - Hang Liu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Jinhui Cao
- College of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410114, P. R. China
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Hongjian Li
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
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4
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Qin Z, Dai L, Li M, Li S, Wu H, White KE, Gani G, Weiss PS, Hu Y. Moiré Pattern Controlled Phonon Polarizer Based on Twisted Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312176. [PMID: 38429904 PMCID: PMC11180428 DOI: 10.1002/adma.202312176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Revised: 02/23/2024] [Indexed: 03/03/2024]
Abstract
Twisted van der Waals materials featuring Moiré patterns present new design possibilities and demonstrate unconventional behaviors in electrical, optical, spintronic, and superconducting properties. However, experimental exploration of thermal transport across Moiré patterns has not been as extensive, despite its critical role in nanoelectronics, thermal management, and energy technologies. Here, the first experimental study is conducted on thermal transport across twisted graphene, demonstrating a phonon polarizer concept from the rotational misalignment between stacked layers. The direct thermal and acoustic measurements, structural characterizations, and atomistic modeling, reveal a modulation up to 631% in thermal conductance with various Moiré angles, while maintaining a high acoustic transmission. By comparing experiments with density functional theory and molecular dynamics simulations, mode-dependent phonon transmissions are quantified based on the angle alignment of graphene band structures and attributed to the coupling among flexural phonon modes. The agreement confirms the dominant tuning mechanisms in adjusting phonon transmission from high-frequency thermal modes while having negligible effects on low-frequency acoustic modes near Brillouin zone center. This study offers crucial insights into the fundamental thermal transport in Moiré structures, opening avenues for the invention of quantum thermal devices and new design methodologies based on manipulations of vibrational band structures and phonon spectra.
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Affiliation(s)
- Zihao Qin
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Lingyun Dai
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Man Li
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Suixuan Li
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Huan Wu
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Katherine E. White
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA
| | - Gilad Gani
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA
| | - Paul S. Weiss
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA
| | - Yongjie Hu
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA
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5
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Yang R, Mei L, Lin Z, Fan Y, Lim J, Guo J, Liu Y, Shin HS, Voiry D, Lu Q, Li J, Zeng Z. Intercalation in 2D materials and in situ studies. Nat Rev Chem 2024; 8:410-432. [PMID: 38755296 DOI: 10.1038/s41570-024-00605-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 04/11/2024] [Indexed: 05/18/2024]
Abstract
Intercalation of atoms, ions and molecules is a powerful tool for altering or tuning the properties - interlayer interactions, in-plane bonding configurations, Fermi-level energies, electronic band structures and spin-orbit coupling - of 2D materials. Intercalation can induce property changes in materials related to photonics, electronics, optoelectronics, thermoelectricity, magnetism, catalysis and energy storage, unlocking or improving the potential of 2D materials in present and future applications. In situ imaging and spectroscopy technologies are used to visualize and trace intercalation processes. These techniques provide the opportunity for deciphering important and often elusive intercalation dynamics, chemomechanics and mechanisms, such as the intercalation pathways, reversibility, uniformity and speed. In this Review, we discuss intercalation in 2D materials, beginning with a brief introduction of the intercalation strategies, then we look into the atomic and intrinsic effects of intercalation, followed by an overview of their in situ studies, and finally provide our outlook.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Liang Mei
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Yingying Fan
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Jongwoo Lim
- Department of Chemistry, Seoul National University, Seoul, Republic of Korea
| | - Jinghua Guo
- Advanced Light Source, Energy Storage and Distributed Resources Division, and Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yijin Liu
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, USA
| | - Hyeon Suk Shin
- Center for 2D Quantum Heterostructures, Institute for Basic Science, and Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Qingye Lu
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada.
| | - Ju Li
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China.
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China.
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6
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Huang S, Bai J, Long H, Yang S, Chen W, Wang Q, Sa B, Guo Z, Zheng J, Pei J, Du KZ, Zhan H. Thermally Activated Photoluminescence Induced by Tunable Interlayer Interactions in Naturally Occurring van der Waals Superlattice SnS/TiS 2. NANO LETTERS 2024; 24:6061-6068. [PMID: 38728017 DOI: 10.1021/acs.nanolett.4c00975] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
van der Waals (vdW) superlattices, comprising different 2D materials aligned alternately by weak interlayer interactions, offer versatile structures for the fabrication of novel semiconductor devices. Despite their potential, the precise control of optoelectronic properties with interlayer interactions remains challenging. Here, we investigate the discrepancies between the SnS/TiS2 superlattice (SnTiS3) and its subsystems by comprehensive characterization and DFT calculations. The disappearance of certain Raman modes suggests that the interactions alter the SnS subsystem structure. Specifically, such structural changes transform the band structure from indirect to direct band gap, causing a strong PL emission (∼2.18 eV) in SnTiS3. In addition, the modulation of the optoelectronic properties ultimately leads to the unique phenomenon of thermally activated photoluminescence. This phenomenon is attributed to the inhibition of charge transfer induced by tunable intralayer strains. Our findings extend the understanding of the mechanism of interlayer interactions in van der Waals superlattices and provide insights into the design of high-temperature optoelectronic devices.
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Affiliation(s)
- Siting Huang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jiahui Bai
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
- College of Physics and Electronic Information Engineering, Minjiang University, Fuzhou 350108, China
| | - Hanyan Long
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Shichao Yang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenwei Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Qiuyan Wang
- College of Physics and Electronic Information Engineering, Minjiang University, Fuzhou 350108, China
| | - Baisheng Sa
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Zhiyong Guo
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jiajie Pei
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Ke-Zhao Du
- Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Hongbing Zhan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
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7
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Cheng D, Liu J, Wei B. Growth of Quasi-Two-Dimensional CrTe Nanoflakes and CrTe/Transition Metal Dichalcogenide Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:868. [PMID: 38786824 PMCID: PMC11123775 DOI: 10.3390/nano14100868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 05/09/2024] [Accepted: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) van der Waals layered materials have been explored in depth. They can be vertically stacked into a 2D heterostructure and represent a fundamental way to explore new physical properties and fabricate high-performance nanodevices. However, the controllable and scaled growth of non-layered quasi-2D materials and their heterostructures is still a great challenge. Here, we report a selective two-step growth method for high-quality single crystalline CrTe/WSe2 and CrTe/MoS2 heterostructures by adopting a universal CVD strategy with the assistance of molten salt and mass control. Quasi-2D metallic CrTe was grown on pre-deposited 2D transition metal dichalcogenides (TMDC) under relatively low temperatures. A 2D CrTe/TMDC heterostructure was established to explore the interface's structure using scanning transmission electron microscopy (STEM), and also demonstrate ferromagnetism in a metal-semiconductor CrTe/TMDC heterostructure.
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Affiliation(s)
| | | | - Bin Wei
- School of Materials, Sun Yat-sen University, Shenzhen 518107, China; (D.C.); (J.L.)
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8
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Zhu J, Li F, Hou Y, Li H, Xu D, Tan J, Du J, Wang S, Liu Z, Wu H, Wang F, Su Y, Cheng HM. Near-room-temperature water-mediated densification of bulk van der Waals materials from their nanosheets. NATURE MATERIALS 2024; 23:604-611. [PMID: 38491148 DOI: 10.1038/s41563-024-01840-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 02/13/2024] [Indexed: 03/18/2024]
Abstract
The conventional fabrication of bulk van der Waals (vdW) materials requires a temperature above 1,000 °C to sinter from the corresponding particulates. Here we report the near-room-temperature densification (for example, ∼45 °C for 10 min) of two-dimensional nanosheets to form strong bulk materials with a porosity of <0.1%, which are mechanically stronger than the conventionally made ones. The mechanistic study shows that the water-mediated activation of van der Waals interactions accounts for the strong and dense bulk materials. Initially, water adsorbed on two-dimensional nanosheets lubricates and promotes alignment. The subsequent extrusion closes the gaps between the aligned nanosheets and densifies them into strong bulk materials. Water extrusion also generates stresses that increase with moulding temperature, and too high a temperature causes intersheet misalignment; therefore, a near-room-temperature moulding process is favoured. This technique provides an energy-efficient alternative to design a wide range of dense bulk van der Waals materials with tailored compositions and properties.
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Affiliation(s)
- Jiuyi Zhu
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, People's Republic of China
- State Key Laboratory of Mesoscience and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Fei Li
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, People's Republic of China
| | - YuanZhen Hou
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, People's Republic of China
| | - Hang Li
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, People's Republic of China
| | - Dingxin Xu
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, People's Republic of China
| | - Junyang Tan
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, People's Republic of China
| | - Jinhong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
| | - Shaogang Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
| | - Zhengbo Liu
- School of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Advanced Energy Storage Materials, South China University of Technology, Guangzhou, People's Republic of China
| | - HengAn Wu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, People's Republic of China
| | - FengChao Wang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, People's Republic of China
| | - Yang Su
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, People's Republic of China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, People's Republic of China.
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, People's Republic of China.
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9
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Qiao S, Qiu Y, Lu Y, Wang Z, Yuan M, Ji Q. One-Dimensional MoS 2 Nanoscrolls as Miniaturized Memories. NANO LETTERS 2024; 24:4498-4504. [PMID: 38587933 DOI: 10.1021/acs.nanolett.4c00423] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS2 nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼104 and a retention time exceeding 103 s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories.
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Affiliation(s)
- Shuo Qiao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Yuanyuan Qiu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Zihan Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Mingxuan Yuan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
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10
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Cheng M, Cao N, Wang Z, Wang K, Pu T, Li Y, Sun T, Yue X, Ni W, Dai W, He Y, Shi Y, Zhang P, Zhu Y, Xie P. Strain-Induced Self-Assembly at Interface of Two-Dimensional Heterostructures Boosts CO 2 Reduction to Methanol by H 2O. ACS NANO 2024; 18:10582-10595. [PMID: 38564712 DOI: 10.1021/acsnano.4c00350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
CO2 conversion with pure H2O into CH3OH and O2 driven by solar energy can supply fuels and life-essential substances for extraterrestrial exploration. However, the effective production of CH3OH is significantly challenging. Here we report an organozinc complex/MoS2 heterostructure linked by well-defined zinc-sulfur covalent bonds derived by the structural deformation and intensive coupling of dx2 - y2(Zn)-p(S) orbitals at the interface, resulting in distinctive charge transfer behaviors and excellent redox capabilities as revealed by experimental characterizations and first-principle calculations. The synthesis strategy is further generalized to more organometallic compounds, achieving various heterostructures for CO2 photoreduction. The optimal catalyst delivers a promising CH3OH yield of 2.57 mmol gcat-1 h-1 and selectivity of more than 99.5%. The reverse water gas shift mechanism is identified for methanol formation. Meanwhile, energy-unfavorable adsorption of methanol on MoS2, where the photogenerated holes accumulate, ensures the selective oxidation of water over methanol.
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Affiliation(s)
- Ming Cheng
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
| | - Ning Cao
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
| | - Zhi Wang
- Center for Electron Microscopy, Institute for Frontier and Interdisciplinary Sciences, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang 310014, China
| | - Ke Wang
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
- Institute of Zhejiang University-Quzhou, Quzhou 324000, China
| | - Tiancheng Pu
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
| | - Yukun Li
- State Center for International Cooperation on Designer Low-Carbon and Environmental Materials School of Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Tulai Sun
- Center for Electron Microscopy, Institute for Frontier and Interdisciplinary Sciences, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang 310014, China
| | - Xuanyu Yue
- Research Institute of Photocatalysis, State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou 350002, China
| | - Wenkang Ni
- Research Institute of Photocatalysis, State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou 350002, China
| | - Wenxin Dai
- Research Institute of Photocatalysis, State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou 350002, China
| | - Yi He
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
| | - Yao Shi
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
| | - Peng Zhang
- State Center for International Cooperation on Designer Low-Carbon and Environmental Materials School of Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Yihan Zhu
- Center for Electron Microscopy, Institute for Frontier and Interdisciplinary Sciences, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang 310014, China
| | - Pengfei Xie
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
- Institute of Zhejiang University-Quzhou, Quzhou 324000, China
- State Key Laboratory of Baiyunobo Rare Earth Resource Researches and Comprehensive Utilization, Baotou Research Institute of Rare Earths, Baotou 014030, China
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11
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Tong Y, Pan C, Li Z, Chen H, Xue D, Cheng L, Zhen Y, Zhang T, Gao Y, Zhang L, Guo X, Tong L, Wang P. High-sensitivity fiber-tip acoustic sensor with ultrathin gold diaphragm. OPTICS EXPRESS 2024; 32:14674-14684. [PMID: 38859405 DOI: 10.1364/oe.519624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Accepted: 03/23/2024] [Indexed: 06/12/2024]
Abstract
Miniature acoustic sensors with high sensitivity are highly desired for applications in medical photoacoustic imaging, acoustic communications and industrial nondestructive testing. However, conventional acoustic sensors based on piezoelectric, piezoresistive and capacitive detectors usually require a large element size on a millimeter to centimeter scale to achieve a high sensitivity, greatly limiting their spatial resolution and the application in space-confined sensing scenarios. Herein, by using single-crystal two-dimensional gold flakes (2DGFs) as the sensing diaphragm of an extrinsic Fabry-Perot interferometer on a fiber tip, we demonstrate a miniature optical acoustic sensor with high sensitivity. Benefiting from the ultrathin thickness (∼8 nm) and high reflectivity of the 2DGF, the fiber-tip acoustic sensor gives an acoustic pressure sensitivity of ∼300 mV/Pa in the frequency range from 100 Hz to 20 kHz. The noise-equivalent pressure of the fiber-tip acoustic sensor at the frequency of 13 kHz is as low as 62.8 µPa/Hz1/2, which is one or two orders of magnitude lower than that of reported optical acoustic sensors with the same size.
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12
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Pan C, Tong Y, Qian H, Krasavin AV, Li J, Zhu J, Zhang Y, Cui B, Li Z, Wu C, Liu L, Li L, Guo X, Zayats AV, Tong L, Wang P. Large area single crystal gold of single nanometer thickness for nanophotonics. Nat Commun 2024; 15:2840. [PMID: 38565552 PMCID: PMC10987654 DOI: 10.1038/s41467-024-47133-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2024] [Accepted: 03/21/2024] [Indexed: 04/04/2024] Open
Abstract
Two-dimensional single crystal metals, in which the behavior of highly confined optical modes is intertwined with quantum phenomena, are highly sought after for next-generation technologies. Here, we report large area (>104 μm2), single crystal two-dimensional gold flakes (2DGFs) with thicknesses down to a single nanometer level, employing an atomic-level precision chemical etching approach. The decrease of the thickness down to such scales leads to the quantization of the electronic states, endowing 2DGFs with quantum-confinement-augmented optical nonlinearity, particularly leading to more than two orders of magnitude enhancement in harmonic generation compared with their thick polycrystalline counterparts. The nanometer-scale thickness and single crystal quality makes 2DGFs a promising platform for realizing plasmonic nanostructures with nanoscale optical confinement. This is demonstrated by patterning 2DGFs into nanoribbon arrays, exhibiting strongly confined near infrared plasmonic resonances with high quality factors. The developed 2DGFs provide an emerging platform for nanophotonic research and open up opportunities for applications in ultrathin plasmonic, optoelectronic and quantum devices.
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Affiliation(s)
- Chenxinyu Pan
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yuanbiao Tong
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Haoliang Qian
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310027, China
| | - Alexey V Krasavin
- Department of Physics and London Centre for Nanotechnology, King's College London, Strand, London, WC2R 2LS, UK
| | - Jialin Li
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jiajie Zhu
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yiyun Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310027, China
| | - Bowen Cui
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zhiyong Li
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Jiaxing, 314000, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing, 314000, China
| | - Chenming Wu
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Lufang Liu
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Linjun Li
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Jiaxing, 314000, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing, 314000, China
| | - Xin Guo
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Jiaxing, 314000, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing, 314000, China
| | - Anatoly V Zayats
- Department of Physics and London Centre for Nanotechnology, King's College London, Strand, London, WC2R 2LS, UK.
| | - Limin Tong
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China.
| | - Pan Wang
- Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
- Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Jiaxing, 314000, China.
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing, 314000, China.
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13
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Liu J, Wan S, Li B, Li B, Liang J, Lu P, Zhang Z, Li W, Li X, Huangfu Y, Wu R, Song R, Yang X, Liu C, Hong R, Duan X, Li J, Duan X. Highly Robust Room-Temperature Interfacial Ferromagnetism in Ultrathin Co 2Si Nanoplates. NANO LETTERS 2024; 24:3768-3776. [PMID: 38477579 DOI: 10.1021/acs.nanolett.4c00321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
The reduced dimensionality and interfacial effects in magnetic nanostructures open the feasibility to tailor magnetic ordering. Here, we report the synthesis of ultrathin metallic Co2Si nanoplates with a total thickness that is tunable to 2.2 nm. The interfacial magnetism coupled with the highly anisotropic nanoplate geometry leads to strong perpendicular magnetic anisotropy and robust hard ferromagnetism at room temperature, with a Curie temperature (TC) exceeding 950 K and a coercive field (HC) > 4.0 T at 3 K and 8750 Oe at 300 K. Theoretical calculations suggest that ferromagnetism originates from symmetry breaking and undercoordinated Co atoms at the Co2Si and SiO2 interface. With protection by the self-limiting intrinsic oxide, the interfacial ferromagnetism of the Co2Si nanoplates exhibits excellent environmental stability. The controllable growth of ambient stable Co2Si nanoplates as 2D hard ferromagnets could open exciting opportunities for fundamental studies and applications in Si-based spintronic devices.
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Affiliation(s)
- Jialing Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Si Wan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ping Lu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Zucheng Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xin Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ying Huangfu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ruixia Wu
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Rong Song
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Zhejiang Institute of Tianjin University, Ningbo 315211, China
| | - Chang Liu
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ruohao Hong
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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14
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Wang H, Zhang J, Shen C, Yang C, Küster K, Deuschle J, Starke U, Zhang H, Isobe M, Huang D, van Aken PA, Takagi H. Direct visualization of stacking-selective self-intercalation in epitaxial Nb 1+xSe 2 films. Nat Commun 2024; 15:2541. [PMID: 38514672 PMCID: PMC10957900 DOI: 10.1038/s41467-024-46934-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Accepted: 03/14/2024] [Indexed: 03/23/2024] Open
Abstract
Two-dimensional (2D) van der Waals (vdW) materials offer rich tuning opportunities generated by different stacking configurations or by introducing intercalants into the vdW gaps. Current knowledge of the interplay between stacking polytypes and intercalation often relies on macroscopically averaged probes, which fail to pinpoint the exact atomic position and chemical state of the intercalants in real space. Here, by using atomic-resolution electron energy-loss spectroscopy in a scanning transmission electron microscope, we visualize a stacking-selective self-intercalation phenomenon in thin films of the transition-metal dichalcogenide (TMDC) Nb1+xSe2. We observe robust contrasts between 180°-stacked layers with large amounts of Nb intercalants inside their vdW gaps and 0°-stacked layers with little detectable intercalants inside their vdW gaps, coexisting on the atomic scale. First-principles calculations suggest that the films lie at the boundary of a phase transition from 0° to 180° stacking when the intercalant concentration x exceeds ~0.25, which we could attain in our films due to specific kinetic pathways. Our results offer not only renewed mechanistic insights into stacking and intercalation, but also open up prospects for engineering the functionality of TMDCs via stacking-selective self-intercalation.
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Affiliation(s)
- Hongguang Wang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Jiawei Zhang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Chen Shen
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany.
| | - Chao Yang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Kathrin Küster
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Julia Deuschle
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Ulrich Starke
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Hongbin Zhang
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Masahiko Isobe
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Dennis Huang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Peter A van Aken
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Hidenori Takagi
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
- Institute for Functional Matter and Quantum Technologies, University of Stuttgart, 70569, Stuttgart, Germany
- Department of Physics, University of Tokyo, 113-0033, Tokyo, Japan
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15
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Wang JL, Zhao YF, Xu W, Zheng JD, Shao YP, Tong WY, Duan CG. Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio. MATERIALS HORIZONS 2024; 11:1325-1333. [PMID: 38174937 DOI: 10.1039/d3mh02006a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Low-dimensional ferroelectric tunnel junctions are appealing for the realization of nanoscale nonvolatile memory devices due to their inherent advantages of device miniaturization. Those based on current mechanisms have limitations, including low tunneling electroresistance (TER) effects and complex heterostructures. Here, we introduce an entirely new TER mechanism to construct a nanotube ferroelectric tunnel junction with ferroelectric nanotubes as the tunneling region. When rolling a ferroelectric monolayer into a nanotube, due to the coexistence of its intrinsic ferroelectric polarization with the flexoelectric polarization induced by bending, a metal-insulator transition occurs depending on the radiative polarization states. For the pristine monolayer, its out-of-plane polarization is tunable by an in-plane electric field, and the conducting states of the ferroelectric nanotube can thus be tuned between metallic and insulating states via axial electric means. Using α-In2Se3 as an example, our first-principles density functional theory calculations and nonequilibrium Green's function formalism confirm the feasibility of the TER mechanism and indicate an ultrahigh TER ratio that exceeds 9.9 × 1010% of the proposed nanotube ferroelectric tunnel junctions. Our findings provide a promising approach based on simple homogeneous structures for high density ferroelectric microelectric devices with excellent ON/OFF performance.
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Affiliation(s)
- Jiu-Long Wang
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Yi-Feng Zhao
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Wen Xu
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Jun-Ding Zheng
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Ya-Ping Shao
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Wen-Yi Tong
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan, Shanxi 030006, China
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16
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An Q, Xiong W, Hu F, Yu Y, Lv P, Hu S, Gan X, He X, Zhao J, Yuan S. Direct growth of single-chiral-angle tungsten disulfide nanotubes using gold nanoparticle catalysts. NATURE MATERIALS 2024; 23:347-355. [PMID: 37443381 DOI: 10.1038/s41563-023-01590-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 05/25/2023] [Indexed: 07/15/2023]
Abstract
Transition metal dichalcogenide (TMD) nanotubes offer a unique platform to explore the properties of TMD materials at the one-dimensional limit. Despite considerable efforts thus far, the direct growth of TMD nanotubes with controllable chirality remains challenging. Here we demonstrate the direct and facile growth of high-quality WS2 and WSe2 nanotubes on Si substrates using catalytic chemical vapour deposition with Au nanoparticles. The Au nanoparticles provide unique accommodation sites for the nucleation of WS2 or WSe2 shells on their surfaces and seed the subsequent growth of nanotubes. We find that the growth mode of nanotubes is sensitive to the temperature. With careful temperature control, we realize ~79% WS2 nanotubes with single chiral angles, with a preference of 30° (~37%) and 0° (~12%). Moreover, we demonstrate how the geometric, electronic and optical properties of the synthesized WS2 nanotubes can be modulated by the chirality. We anticipate that this approach using Au nanoparticles as catalysts will facilitate the growth of TMD nanotubes with controllable chirality and promote the study of their interesting properties and applications.
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Affiliation(s)
- Qinwei An
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, Shaanxi Key Laboratory of Optical Information Technology and School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, China.
| | - Wenqi Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China
- Wuhan Institute of Quantum Technology, Wuhan, China
| | - Feng Hu
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Yikang Yu
- School of Mechanical Engineering, Purdue University, West Lafayette, IN, USA
| | - Pengfei Lv
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China
| | - Siqi Hu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, Shaanxi Key Laboratory of Optical Information Technology and School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, Shaanxi Key Laboratory of Optical Information Technology and School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, China
| | - Xiaobo He
- Institute of Physics, Henan Academy of Sciences, Zhengzhou, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, Shaanxi Key Laboratory of Optical Information Technology and School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, China
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China.
- Wuhan Institute of Quantum Technology, Wuhan, China.
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17
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Zhu H, Yakobson BI. Creating chirality in the nearly two dimensions. NATURE MATERIALS 2024; 23:316-322. [PMID: 38388730 DOI: 10.1038/s41563-024-01814-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 01/18/2024] [Indexed: 02/24/2024]
Abstract
Structural chirality, defined as the lack of mirror symmetry in materials' atomic structure, is only meaningful in three-dimensional space. Yet two-dimensional (2D) materials, despite their small thickness, can show chirality that enables prominent asymmetric optical, electrical and magnetic properties. In this Perspective, we first discuss the possible definition and mathematical description of '2D chiral materials', and the intriguing physics enabled by structural chirality in van der Waals 2D homobilayers and heterostructures, such as circular dichroism, chiral plasmons and the nonlinear Hall effect. We then summarize the recent experimental progress and approaches to induce and control structural chirality in 2D materials from monolayers to superlattices. Finally, we postulate a few unique opportunities offered by 2D chiral materials, the synthesis and new properties of which can potentially lead to chiral optoelectronic devices and possibly materials for enantioselective photochemistry.
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Affiliation(s)
- Hanyu Zhu
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA.
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA.
- Department of Chemistry, Rice University, Houston, TX, USA.
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18
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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19
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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20
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Yang N, Li H, Liu G, Yu Y, Huang L, Xu Z, Xiao X, Chen T. Tunable electronic properties and optoelectronic characteristics of MoGe 2N 4/SiC van der Waals heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:195301. [PMID: 38286016 DOI: 10.1088/1361-648x/ad2389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 01/29/2024] [Indexed: 01/31/2024]
Abstract
The assembly of van der Waals (vdW) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimensional materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.
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Affiliation(s)
- Ning Yang
- School of software Engineering, Jiangxi University of Science and Technolagy, Nanchang 330013, People's Republic of China
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Hui Li
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
- Department of Applied Physics, East China Jiaotong University, Nanchang 330013, People's Republic of China
| | - Guogang Liu
- School of software Engineering, Jiangxi University of Science and Technolagy, Nanchang 330013, People's Republic of China
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Yang Yu
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Lin Huang
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Zhonghui Xu
- School of software Engineering, Jiangxi University of Science and Technolagy, Nanchang 330013, People's Republic of China
| | - Xianbo Xiao
- School of Computer Science, Jiangxi University of Chinese Medicine, Nanchang 330004, People's Republic of China
| | - Tong Chen
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
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21
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Chen X, Wang G, Li B, Wang N. Strain-Driven High Thermal Conductivity in Hexagonal Boron Phosphide Monolayer. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024. [PMID: 38299976 DOI: 10.1021/acs.langmuir.3c03472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
Abstract
Two-dimensional graphenelike material, hexagonal boron phosphide (h-BP), is a promising candidate for electronic and optoelectronic devices because of its suitable band gap and high carrier mobility. Especially from the ultrahigh lattice thermal conductivity (κl), it exhibits great potential to solve the challenges of future thermal management applications. Here, the excellent lattice thermal transport properties of the h-BP monolayer are systematically analyzed at the atomic level based on the first-principles method. The results show that the ultrahigh κl value of the h-BP monolayer is attributed to its high phonon group velocity and long phonon lifetime and the strong phonon hydrodynamic effect. We further explore the influence of the tensile strain on the thermal transport properties of the h-BP monolayer. As the strain increases from 0 to 8%, the κl value shows a trend of first increasing and then decreasing due to the coeffect of strain-driven changes for phonon harmonicity and anharmonicity. Under a strain of 6%, the κl value of the h-BP monolayer is as high as 795 W/mK at 300 K, which is about 2.22 times larger than that of 357 W/mK without strain. Such a significant increase in the κl value is mainly due to the increased phonon group velocity and decreased Grüneisen parameter caused by strain. This work is helpful to understand the critical role of tensile strain in lattice thermal transport of two-dimensional graphenelike materials. It is conducive to promoting the thermal management application of the h-BP monolayer.
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Affiliation(s)
- Xihao Chen
- School of Materials Science and Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China
| | - Guangzhao Wang
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China
| | - Bingke Li
- Henan Key Laboratory of Industrial Microbial Resources and Fermentation Technology, School of Biological and Chemical Engineering, Nanyang Institute of Technology, Nanyang 473004, China
| | - Ning Wang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
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22
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Kaneda M, Zhang W, Liu Z, Gao Y, Maruyama M, Nakanishi Y, Nakajo H, Aoki S, Honda K, Ogawa T, Hashimoto K, Endo T, Aso K, Chen T, Oshima Y, Yamada-Takamura Y, Takahashi Y, Okada S, Kato T, Miyata Y. Nanoscrolls of Janus Monolayer Transition Metal Dichalcogenides. ACS NANO 2024; 18:2772-2781. [PMID: 38230852 DOI: 10.1021/acsnano.3c05681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Tubular structures of transition metal dichalcogenides (TMDCs) have attracted attention in recent years due to their emergent physical properties, such as the giant bulk photovoltaic effect and chirality-dependent superconductivity. To understand and control these properties, it is highly desirable to develop a sophisticated method to fabricate TMDC tubular structures with smaller diameters and a more uniform crystalline orientation. For this purpose, the rolling up of TMDC monolayers into nanoscrolls is an attractive approach to fabricating such a tubular structure. However, the symmetric atomic arrangement of a monolayer TMDC generally makes its tubular structure energetically unstable due to considerable lattice strain in curved monolayers. Here, we report the fabrication of narrow nanoscrolls by using Janus TMDC monolayers, which have an out-of-plane asymmetric structure. Janus WSSe and MoSSe monolayers were prepared by the plasma-assisted surface atom substitution of WSe2 and MoSe2 monolayers, respectively, and then were rolled by solution treatment. The multilayer tubular structures of Janus nanoscrolls were revealed by scanning transmission electron microscopy observations. Atomic resolution elemental analysis confirmed that the Janus monolayers were rolled up with the Se-side surface on the outside. We found that the present nanoscrolls have the smallest diameter of about 5 nm, which is almost the same as the value predicted by the DFT calculation. The difference in work functions between the S- and Se-side surfaces was measured by Kelvin probe force microscopy, which is in good agreement with the theoretical prediction. Strong interlayer interactions and anisotropic optical responses of the Janus nanoscrolls were also revealed by Raman and photoluminescence spectroscopy.
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Affiliation(s)
- Masahiko Kaneda
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Wenjin Zhang
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Yanlin Gao
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Hiroshi Nakajo
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
- Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
- KOKUSAI ELCTRIC CORP., Toyama 939-2393, Japan
| | - Soma Aoki
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
- Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Kota Honda
- Department of Electronics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
| | - Tomoya Ogawa
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Kazuki Hashimoto
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Kohei Aso
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Tongmin Chen
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Yoshifumi Oshima
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Yukiko Yamada-Takamura
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Yasufumi Takahashi
- Department of Electronics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
- WPI Nano Life Science Institute (WPI-NanoLSI), Kanazawa University, Kanazawa 920-1192, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Toshiaki Kato
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
- Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
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23
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Yuan R, Zhang Z, Wu G, Zhang Y, Sha J, Chen Y, Si W. Unfolding of protein using MoS 2/SnS 2heterostructure for nanopore-based sequencing. NANOTECHNOLOGY 2024; 35:135501. [PMID: 38118165 DOI: 10.1088/1361-6528/ad177f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 12/20/2023] [Indexed: 12/22/2023]
Abstract
Protein sequencing is crucial for understanding the complex mechanisms driving biological functions. However, proteins are usually folded in their native state and the mechanism of fast protein conformation transitions still remains unclear, which make protein sequencing challenging. Molecular dynamics simulations with accurate force field are now able to observe the entire folding/unfolding process, providing valuable insights into protein folding mechanisms. Given that proteins can be unfolded, nanopore technology shows great potential for protein sequencing. In this study, we proposed to use MoS2/SnS2heterostructures to firstly unfold proteins and then detect them by a nanopore in the heterostructural membrane. All-atom molecular dynamics simulations performed in this work provided rich atomic-level information for a comprehensive understanding of protein unfolding process and mechanism on the MoS2/SnS2heterostructure, it was found that the strong binding of protein to SnS2nanostripe and hydrogen bond breaking were the main reasons for unfolding the protein on the heterostructure. After the protein was fully unfolded, it was restrained on the nanostripe because of the affinity of protein to the SnS2nanostripe. Thus by integrating the proposed unfolding technique with nanopore technology, detection of linear unfolded peptide was realized in this work, allowing for the identification of protein components, which is essential for sequencing proteins in the near future.
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Affiliation(s)
- Runyi Yuan
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211100, People's Republic of China
| | - Zhen Zhang
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211100, People's Republic of China
| | - Gensheng Wu
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, People's Republic of China
| | - Yin Zhang
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211100, People's Republic of China
| | - Jingjie Sha
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211100, People's Republic of China
| | - Yunfei Chen
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211100, People's Republic of China
| | - Wei Si
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211100, People's Republic of China
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24
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Cao YM, Su Y, Zheng M, Luo P, Xue YB, Han BB, Zheng M, Wang Z, Liao LS, Zhuo MP. Vertical Phase-Engineering MoS 2 Nanosheet-Enhanced Textiles for Efficient Moisture-Based Energy Generation. ACS NANO 2024; 18:492-505. [PMID: 38117279 DOI: 10.1021/acsnano.3c08132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Flexible moisture-electric generators (MEGs) capture chemical energy from atmospheric moisture for sustainable electricity, gaining attention in wearable electronics. However, challenges persist in the large-scale integration and miniaturization of MEGs for long-term, high-power output. Herein, a vertical heterogeneous phase-engineering MoS2 nanosheet structure based silk and cotton were rationally designed and successfully applied to construct wearable MEGs for moisture-energy conversion. The prepared METs exhibit ∼0.8 V open-circuit voltage, ∼0.27 mA/cm2 current density for >10 h, and >36.12 μW/cm2 peak output power density, 3 orders higher than current standards. And the large-scale device realizes a current output of 0.145 A. An internal phase gradient between the 2H semiconductor MoS2 in carbonized silks and 1T metallic MoS2 in cotton fibers enables a phase-engineering-based heterogeneous electric double layer functioning as an equivalent parallel circuit, leading to enhanced high-power output. Owing to their facile customization for seamless adaptation to the human body, we envision exciting possibilities for these wearable METs as integrated self-power sources, enabling real-time monitoring of physiological parameters in wearable electronics.
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Affiliation(s)
- Yuan-Ming Cao
- College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
- College of Biological Science and Medical Engineering, Donghua University, Shanghai 201620, People's Republic of China
| | - Yang Su
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China
| | - Mi Zheng
- College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Peng Luo
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China
| | - Yang-Biao Xue
- College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Bin-Bin Han
- College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Min Zheng
- College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Zuoshan Wang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Ming-Peng Zhuo
- College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
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25
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Chen R, Li P. Guided spiraling phonon polaritons in rolled one-dimensional MoO 3 nanotubes. OPTICS EXPRESS 2023; 31:42995-43003. [PMID: 38178403 DOI: 10.1364/oe.502399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 08/31/2023] [Indexed: 01/06/2024]
Abstract
Polaritons in reduced-dimensional materials, such as nanowire, nanoribbon and rolled nanotube, usually provide novel avenues for manipulating electromagnetic fields at the nanoscale. Here, we theoretically propose and study hyperbolic phonon polaritons (HPhPs) with rolled one-dimensional molybdenum trioxide (MoO3) nanotube structure. We find that the HPhPs in rolled MoO3 nanotubes exhibit low propagation losses and tunable electromagnetic confinement along the rolled direction. By rolling the twisted bilayer MoO3, we successfully achieve a canalized phonon polaritons mode in the rolled nanotube, enabling their propagation in a spiraling manner along the nanotube. Our findings demonstrate the considerable potential of the rolled MoO3 nanotubes as promising platforms for various applications in light manipulation and nanophotonics circuits, including negative refraction, waveguiding and routing at the ultimate scale.
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26
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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27
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Wu B, Zhang Z, Zheng Z, Cai T, You C, Liu C, Li X, Wang Y, Wang J, Li H, Song E, Cui J, Huang G, Mei Y. Self-Rolled-Up Ultrathin Single-Crystalline Silicon Nanomembranes for On-Chip Tubular Polarization Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306715. [PMID: 37721970 DOI: 10.1002/adma.202306715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 09/09/2023] [Indexed: 09/20/2023]
Abstract
Freestanding single-crystalline nanomembranes and their assembly have broad application potential in photodetectors for integrated chips. However, the release and self-assembly process of single-crystalline semiconductor nanomembranes still remains a great challenge in on-chip processing and functional integration, and photodetectors based on nanomembrane always suffer from limited absorption of nanoscale thickness. Here, a non-destructive releasing and rolling process is employed to prepare tubular photodetectors based on freestanding single-crystalline Si nanomembranes. Spontaneous release and self-assembly are achieved by residual strain introduced by lattice mismatch at the epitaxial interface of Si and Ge, and the intrinsic stress and strain distributions in self-rolled-up Si nanomembranes are analyzed experimentally and computationally. The advantages of light trapping and wide-angle optical coupling are realized by tubular geometry. This Si microtube device achieves reliable Ohmic contact and exhibits a photoresponsivity of over 330 mA W-1 , a response time of 370 µs, and a light incident detection angle range of over 120°. Furthermore, the microtubular structure shows a distinct polarization angle-dependent light absorption, with a dichroic ratio of 1.24 achieved at 940 nm. The proposed Si-based microtubes provide new possibilities for the construction of multifunctional chips for integrated circuit ecosystems in the More than Moore era.
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Affiliation(s)
- Binmin Wu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Ziyu Zhang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Zhi Zheng
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Tianjun Cai
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Chunyu You
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Chang Liu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Xing Li
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Yang Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Jinlong Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Hongbin Li
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Enming Song
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Jizhai Cui
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
| | - Gaoshan Huang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
| | - Yongfeng Mei
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
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28
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Wang F, Xie L, Sun N, Zhi T, Zhang M, Liu Y, Luo Z, Yi L, Zhao Q, Wang L. Deformable Catalytic Material Derived from Mechanical Flexibility for Hydrogen Evolution Reaction. NANO-MICRO LETTERS 2023; 16:32. [PMID: 37999792 PMCID: PMC10673806 DOI: 10.1007/s40820-023-01251-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/21/2023] [Indexed: 11/25/2023]
Abstract
Deformable catalytic material with excellent flexible structure is a new type of catalyst that has been applied in various chemical reactions, especially electrocatalytic hydrogen evolution reaction (HER). In recent years, deformable catalysts for HER have made great progress and would become a research hotspot. The catalytic activities of deformable catalysts could be adjustable by the strain engineering and surface reconfiguration. The surface curvature of flexible catalytic materials is closely related to the electrocatalytic HER properties. Here, firstly, we systematically summarized self-adaptive catalytic performance of deformable catalysts and various micro-nanostructures evolution in catalytic HER process. Secondly, a series of strategies to design highly active catalysts based on the mechanical flexibility of low-dimensional nanomaterials were summarized. Last but not least, we presented the challenges and prospects of the study of flexible and deformable micro-nanostructures of electrocatalysts, which would further deepen the understanding of catalytic mechanisms of deformable HER catalyst.
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Affiliation(s)
- Fengshun Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lingbin Xie
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ning Sun
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Mengyang Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Yang Liu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lanhua Yi
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, School of Chemistry, Xiangtan University, Xiangtan, 411105, People's Republic of China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM) & Institute of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications, 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Longlu Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
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29
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Da Y, Zhang X, Peng C, Huang H, Zhang S, Chu PK, Yu XF, Wang J. Selectively Confined Black Phosphorus Nanowires in Carbon Nanotubes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54157-54165. [PMID: 37942866 DOI: 10.1021/acsami.3c12660] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Nanoconfinement of low-dimensional materials opens up a new territory for tailoring material hybridization to produce novel geometric structures for applications in electronics, catalysis, and photonics. Despite the progress made in the encapsulation of 2D materials, exploration of their definite crystal structures into lower-dimensional nanomaterials is still largely unexplored. Herein, one-dimensional black phosphorus (BP) nanowires with an aspect ratio of over 100 produced by confining BP into the CNT (conf-BP@CNT) are reported. Notably, the unique structure and dimensions of BP were determined by confinement within the CNT and were accurately characterized by crystallography. During the spatially confined growth, the defects and capillarity effect of the CNT promote nucleation and growth of BP within the CNT. conf-BP@CNT shows surface charge localization of conf-BP and protection rendered by the CNT shell, giving rise to more efficient and stable photocatalytic rhodamine B (RhB) degradation than the bare exfoliated BP nanosheets. These results demonstrate the effectiveness of nanoconfinement in producing nanomaterials with controllable dimensions, precise spatial arrangement, and unique structures.
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Affiliation(s)
- Yumin Da
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
- University of Chinese Academy of Sciences Beijing 100049, P. R. China
| | - Xue Zhang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
- University of Chinese Academy of Sciences Beijing 100049, P. R. China
| | - Chao Peng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
- University of Chinese Academy of Sciences Beijing 100049, P. R. China
| | - Hao Huang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Shuai Zhang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, P. R. China
| | - Xue-Feng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
- University of Chinese Academy of Sciences Beijing 100049, P. R. China
- Biomedical Imaging Science and System Key Laboratory, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Jiahong Wang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
- University of Chinese Academy of Sciences Beijing 100049, P. R. China
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, P. R. China
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30
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Li L, Zhang Q, Li H, Geng D. Liquid metal catalyzed chemical vapor deposition towards morphology engineering of 2D epitaxial heterostructures. Chem Commun (Camb) 2023. [PMID: 37991755 DOI: 10.1039/d3cc04914k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
The past decades have witnessed significant advancements in the growth of two-dimensional (2D) materials, offering a wide range of potential applications in the fields of electronics, optoelectronics, energy storage, sensors, catalysis, and biomedical treatments. Epitaxial heterostructures based on 2D materials, including vertical heterostructures, lateral structures, and superlattices, have emerged as novel material systems to manipulate the intrinsic properties and unlock new functionalities. Therefore, the development of controllable preparation methods for tailored epitaxial heterostructures serves as a fundamental basis for extensive property investigation and further application exploration. However, this pursuit presents formidable challenges due to the incomplete understanding of growth mechanisms and limited designable strategies. Chemical vapor deposition (CVD) is deemed as a promising and versatile platform for the controlled synthesis of 2D materials, especially with regard to achieving lattice matching, a critical factor in epitaxial growth. Consequently, CVD holds potential to overcome these hurdles. In this Feature Article, we present our recent breakthroughs in the controllable preparation of 2D epitaxial heterostructures using CVD. Our focus revolves around the processes of morphology engineering, interface engineering, size and density engineering, and striking the delicate balance between growth and etching. Using molten metals or alloys as primary catalysts, we have achieved remarkable control over the fabrication of graphene/hexagonal boron nitride (hBN) super-ordered arrays, enabled multistage etching of graphene/hBN heterostructures, and successfully realized the construction of graphene/MXene heterostructures. Furthermore, our research endeavors encompass both bottom-up and top-down fabrication methods, offering a novel perspective on the synthesis of 2D epitaxial heterostructures. The resulting products hold immense potential for enhancing the efficiency of critical reactions such as oxygen reduction, CO2 reduction, and hydrogen evolution reactions. By presenting our methodologies for obtaining 2D epitaxial heterostructures through CVD, we aspire to inspire fellow researchers in this field to devise more feasible and controllable fabrication techniques while also fostering the exploration of diverse heterostructure configurations. Together, these advancements will undoubtedly pave the way for further breakthroughs in atomic manufacturing and novel applications.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
| | - Qing Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Hang Li
- CAS Key Laboratory of Separation Science for Analytical Chemistry, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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31
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Duncan CJR, Kaemingk M, Li WH, Andorf MB, Bartnik AC, Galdi A, Gordon M, Pennington CA, Bazarov IV, Zeng HJ, Liu F, Luo D, Sood A, Lindenberg AM, Tate MW, Muller DA, Thom-Levy J, Gruner SM, Maxson JM. Multi-scale time-resolved electron diffraction: A case study in moiré materials. Ultramicroscopy 2023; 253:113771. [PMID: 37301082 DOI: 10.1016/j.ultramic.2023.113771] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 05/09/2023] [Accepted: 05/26/2023] [Indexed: 06/12/2023]
Abstract
Ultrafast-optical-pump - structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying matter out of equilibrium. High-performance detectors are needed in scattering experiments to obtain maximum scientific value from every probe particle. We deploy a hybrid pixel array direct electron detector to perform ultrafast electron diffraction experiments on a WSe2/MoSe2 2D heterobilayer, resolving the weak features of diffuse scattering and moiré superlattice structure without saturating the zero order peak. Enabled by the detector's high frame rate, we show that a chopping technique provides diffraction difference images with signal-to-noise at the shot noise limit. Finally, we demonstrate that a fast detector frame rate coupled with a high repetition rate probe can provide continuous time resolution from femtoseconds to seconds, enabling us to perform a scanning ultrafast electron diffraction experiment that maps thermal transport in WSe2/MoSe2 and resolves distinct diffusion mechanisms in space and time.
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Affiliation(s)
- C J R Duncan
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA.
| | - M Kaemingk
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - W H Li
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - M B Andorf
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - A C Bartnik
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - A Galdi
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - M Gordon
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - C A Pennington
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - I V Bazarov
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA
| | - H J Zeng
- Department of Chemistry, Stanford University, Stanford, CA 94305, USA
| | - F Liu
- Department of Chemistry, Stanford University, Stanford, CA 94305, USA
| | - D Luo
- SLAC National Accelerator Laboratory, Menlo Park, CA 94205, USA
| | - A Sood
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08540, USA; Princeton Materials Institute, Princeton University, Princeton, NJ 08540, USA
| | - A M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - M W Tate
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA
| | - D A Muller
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA; School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - J Thom-Levy
- Laboratory for Elementary-Particle Physics, Cornell University, Ithaca, NY 14853, USA
| | - S M Gruner
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - J M Maxson
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, NY 14850, USA.
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32
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Wu B, Zhang Z, Chen B, Zheng Z, You C, Liu C, Li X, Wang J, Wang Y, Song E, Cui J, An Z, Huang G, Mei Y. One-step rolling fabrication of VO 2 tubular bolometers with polarization-sensitive and omnidirectional detection. SCIENCE ADVANCES 2023; 9:eadi7805. [PMID: 37851806 PMCID: PMC10584336 DOI: 10.1126/sciadv.adi7805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2023] [Accepted: 09/15/2023] [Indexed: 10/20/2023]
Abstract
Uncooled infrared detection based on vanadium dioxide (VO2) radiometer is highly demanded in temperature monitoring and security protection. The key to its breakthrough is to fabricate bolometer arrays with great absorbance and excellent thermal insulation using a straightforward procedure. Here, we show a tubular bolometer by one-step rolling VO2 nanomembranes with enhanced infrared detection. The tubular geometry enhances the thermal insulation, light absorption, and temperature sensitivity of freestanding VO2 nanomembranes. This tubular VO2 bolometer exhibits a detectivity of ~2 × 108 cm Hz1/2 W-1 in the ultrabroad infrared spectrum, a response time of ~2.0 ms, and a calculated noise-equivalent temperature difference of 64.5 mK. Furthermore, our device presents a workable structural paradigm for polarization-sensitive and omnidirectional light coupling bolometers. The demonstrated overall characteristics suggest that tubular bolometers have the potential to narrow performance and cost gap between photon detectors and thermal detectors with low cost and broad applications.
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Affiliation(s)
- Binmin Wu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Ziyu Zhang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Bingxin Chen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zhi Zheng
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Chunyu You
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Chang Liu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Xing Li
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Jinlong Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Yunqi Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Enming Song
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Jizhai Cui
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Gaoshan Huang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Yongfeng Mei
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
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33
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Yang R, Ye H, Sun N, Liu W. Spontaneous formation of MoS 2 nanoscrolls from flat monolayers with sulfur vacancies: a molecular dynamics investigation. NANOSCALE 2023; 15:15427-15434. [PMID: 37706225 DOI: 10.1039/d3nr03407k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
The unique physical properties exhibited by one-dimensional nanoscrolls assembled from nanosheets have propelled them into the spotlight of two-dimensional materials research. However, the self-scrolling mechanism of transition metal dichalcogenides has not been unveiled with an appropriate theoretical approach. In this paper, we systematically investigate the spontaneous formation of MoS2 nanoscrolls from flat monolayers by molecular dynamics simulations based on a reactive force field. The sulfur vacancies on one side break the atomic symmetry and the reconstruction acts as the driving force for the curling of the flat nanoribbon. If sulfur vacancies are arranged in a line, clear bending angles of the nanoribbon can be obtained and the angle relies on the direction of the line vacancy. With random sulfur vacancies on the top, spontaneous curling and a time-dependent scrolling process of the nanoribbon can be observed. The interplay between dangling bonds and van der Waals (vdW) interactions plays a pivotal role in the formation process of MoS2 nanoscrolls. With an increasing density of sulfur vacancies, the curvature of the nanoscrolls increases. Meanwhile, the scrolling rate accelerates and the time required for the formation of vdW structures decreases. These results provide theoretical insights into the fabrication of nanoscrolls and pave avenues for tailoring nanoscrolls with different morphologies.
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Affiliation(s)
- Ruhao Yang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Han Ye
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Naizhang Sun
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Wenjun Liu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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34
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Fu W, John M, Maddumapatabandi TD, Bussolotti F, Yau YS, Lin M, Johnson Goh KE. Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition. ACS NANO 2023; 17:16348-16368. [PMID: 37646426 DOI: 10.1021/acsnano.3c04581] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Affiliation(s)
- Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Mark John
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
| | - Thathsara D Maddumapatabandi
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Fabio Bussolotti
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Yong Sean Yau
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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35
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Zhou Z, Hou F, Huang X, Wang G, Fu Z, Liu W, Yuan G, Xi X, Xu J, Lin J, Gao L. Stack growth of wafer-scale van der Waals superconductor heterostructures. Nature 2023; 621:499-505. [PMID: 37674075 DOI: 10.1038/s41586-023-06404-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Accepted: 07/05/2023] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted considerable attention in recent years1-5. The most widely used method of fabrication is to stack mechanically exfoliated micrometre-sized flakes6-18, but this process is not scalable for practical applications. Despite thousands of 2D materials being created, using various stacking combinations1-3,19-21, hardly any large 2D superconductors can be stacked intact into vdW heterostructures, greatly restricting the applications for such devices. Here we report a high-to-low temperature strategy for controllably growing stacks of multiple-layered vdW superconductor heterostructure (vdWSH) films at a wafer scale. The number of layers of 2D superconductors in the vdWSHs can be precisely controlled, and we have successfully grown 27 double-block, 15 triple-block, 5 four-block and 3 five-block vdWSH films (where one block represents one 2D material). Morphological, spectroscopic and atomic-scale structural analyses reveal the presence of parallel, clean and atomically sharp vdW interfaces on a large scale, with very little contamination between neighbouring layers. The intact vdW interfaces allow us to achieve proximity-induced superconductivity and superconducting Josephson junctions on a centimetre scale. Our process for making multiple-layered vdWSHs can easily be generalized to other situations involving 2D materials, potentially accelerating the design of next-generation functional devices and applications22-24.
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Affiliation(s)
- Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fuchen Hou
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Gang Wang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China
| | - Zihao Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weilin Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China.
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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36
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Yu S, Wang P, Ye H, Tang H, Wang S, Wu Z, Pei C, Lu J, Li H. Transition Metal Dichalcogenides Nanoscrolls: Preparation and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2433. [PMID: 37686941 PMCID: PMC10490124 DOI: 10.3390/nano13172433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/21/2023] [Accepted: 08/25/2023] [Indexed: 09/10/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) nanosheets have shown extensive applications due to their excellent physical and chemical properties. However, the low light absorption efficiency limits their application in optoelectronics. By rolling up 2D TMDCs nanosheets, the one-dimensional (1D) TMDCs nanoscrolls are formed with spiral tubular structure, tunable interlayer spacing, and opening ends. Due to the increased thickness of the scroll structure, the light absorption is enhanced. Meanwhile, the rapid electron transportation is confined along the 1D structure. Therefore, the TMDCs nanoscrolls show improved optoelectronic performance compared to 2D nanosheets. In addition, the high specific surface area and active edge site from the bending strain of the basal plane make them promising materials for catalytic reaction. Thus, the TMDCs nanoscrolls have attracted intensive attention in recent years. In this review, the structure of TMDCs nanoscrolls is first demonstrated and followed by various preparation methods of the TMDCs nanoscrolls. Afterwards, the applications of TMDCs nanoscrolls in the fields of photodetection, hydrogen evolution reaction, and gas sensing are discussed.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
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Chavez-Angel E, Tsipas P, Xiao P, Ahmadi MT, Daaoub AHS, Sadeghi H, Sotomayor Torres CM, Dimoulas A, Sachat AE. Engineering Heat Transport Across Epitaxial Lattice-Mismatched van der Waals Heterointerfaces. NANO LETTERS 2023; 23:6883-6891. [PMID: 37467035 PMCID: PMC10416569 DOI: 10.1021/acs.nanolett.3c01280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Revised: 06/27/2023] [Indexed: 07/20/2023]
Abstract
Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating thermal metamaterials based on atomically thin lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistances (70-202 m2 K/GW) and ultralow cross-plane thermal conductivities (0.012-0.07 W/mK) at room temperature, comparable to those of amorphous materials. Experimental data obtained using frequency-domain thermoreflectance and low-frequency Raman spectroscopy, supported by tight-binding phonon calculations, reveal the impact of lattice mismatch, phonon-interface scattering, size effects, temperature, and interface thermal resistance on cross-plane heat dissipation, uncovering different thermal transport regimes and the dominant role of long-wavelength phonons. Our findings provide essential insights into emerging synthesis and thermal characterization methods and valuable guidance for the development of large-area heteroepitaxial van der Waals films of dissimilar materials with tailored thermal transport characteristics.
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Affiliation(s)
- Emigdio Chavez-Angel
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Polychronis Tsipas
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, Agia Paraskevi, Athens 15341, Greece
| | - Peng Xiao
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | | | | | - Hatef Sadeghi
- School
of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Clivia M. Sotomayor Torres
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
- ICREA, Passeig Lluis Companys 23, Barcelona 08010, Spain
| | - Athanasios Dimoulas
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, Agia Paraskevi, Athens 15341, Greece
| | - Alexandros El Sachat
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, Agia Paraskevi, Athens 15341, Greece
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38
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Wei N, Ding Y, Zhang J, Li L, Zeng M, Fu L. Curvature geometry in 2D materials. Natl Sci Rev 2023; 10:nwad145. [PMID: 37389139 PMCID: PMC10306360 DOI: 10.1093/nsr/nwad145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2023] [Revised: 05/10/2023] [Accepted: 05/14/2023] [Indexed: 07/01/2023] Open
Abstract
The two-dimensional (2D) material family can be regarded as the extreme externalization form of the matter in the planar 2D space. These atomically thin materials have abundant curvature structures, which will significantly affect their atomic configurations and physicochemical properties. Curvature engineering offers a new tuning freedom beyond the thoroughly studied layer number, grain boundaries, stacking order, etc. The precise control of the curvature geometry in 2D materials can redefine this material family. Special attention will be given to this emerging field and highlight possible future directions. With the step-by-step achievement in understanding the curvature engineering effect in 2D materials and establishing reliable delicate curvature controlling strategies, a brand-new era of 2D materials research could be developed.
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Affiliation(s)
- Nan Wei
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Yiran Ding
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Jiaqian Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Linyi Li
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | | | - Lei Fu
- Corresponding author. E-mail:
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39
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Seki S, Li Z. Electrons lighter than ever. NATURE MATERIALS 2023:10.1038/s41563-023-01563-8. [PMID: 37337070 DOI: 10.1038/s41563-023-01563-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Affiliation(s)
- Shu Seki
- Department of Molecular Engineering, Kyoto University, Kyoto, Japan.
| | - Zhuowei Li
- Department of Molecular Engineering, Kyoto University, Kyoto, Japan
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40
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Shi X, Kurman Y, Shentcis M, Wong LJ, García de Abajo FJ, Kaminer I. Free-electron interactions with van der Waals heterostructures: a source of focused X-ray radiation. LIGHT, SCIENCE & APPLICATIONS 2023; 12:148. [PMID: 37321995 DOI: 10.1038/s41377-023-01141-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 03/06/2023] [Accepted: 03/30/2023] [Indexed: 06/17/2023]
Abstract
The science and technology of X-ray optics have come far, enabling the focusing of X-rays for applications in high-resolution X-ray spectroscopy, imaging, and irradiation. In spite of this, many forms of tailoring waves that had substantial impact on applications in the optical regime have remained out of reach in the X-ray regime. This disparity fundamentally arises from the tendency of refractive indices of all materials to approach unity at high frequencies, making X-ray-optical components such as lenses and mirrors much harder to create and often less efficient. Here, we propose a new concept for X-ray focusing based on inducing a curved wavefront into the X-ray generation process, resulting in the intrinsic focusing of X-ray waves. This concept can be seen as effectively integrating the optics to be part of the emission mechanism, thus bypassing the efficiency limits imposed by X-ray optical components, enabling the creation of nanobeams with nanoscale focal spot sizes and micrometer-scale focal lengths. Specifically, we implement this concept by designing aperiodic vdW heterostructures that shape X-rays when driven by free electrons. The parameters of the focused hotspot, such as lateral size and focal depth, are tunable as a function of an interlayer spacing chirp and electron energy. Looking forward, ongoing advances in the creation of many-layer vdW heterostructures open unprecedented horizons of focusing and arbitrary shaping of X-ray nanobeams.
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Affiliation(s)
- Xihang Shi
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Yaniv Kurman
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Michael Shentcis
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Liang Jie Wong
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, Barcelona, 08010, Spain
| | - Ido Kaminer
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel.
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41
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Tang S, Ma Y, Wang H, Liang Y, Xu X, Zhang D, Cao B, Wang Q, Li W. One-Pot Synthesis of 2D-2D WO 3 /g-C 3 N 4 Photocatalyst in Reverse Microemulsion System via Supercritical CO 2 for Enhanced Hydrogen Generation. CHEMSUSCHEM 2023; 16:e202202184. [PMID: 36814358 DOI: 10.1002/cssc.202202184] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Revised: 02/22/2023] [Indexed: 06/10/2023]
Abstract
Construction of Z-scheme photocatalyst is an effective approach for using solar energy to produce hydrogen during water splitting. Herein, 2D/2D WO3 /g-C3 N4 heterojunction photocatalyst was synthesized by a convenient and green method including exfoliation and heterojunction procedures, in the reverse microemulsion system via supercritical carbon dioxide (scCO2 ). The resultant W/CN-10.3 composite exhibited enhanced photocatalytic activities towards the hydrogen evolution during water splitting with a hydrogen evolution rate of 688.51 μmol g-1 h-1 , which was more than 16 times higher than bulk g-C3 N4 with the same loading amount of Pt as cocatalyst. Due to its effective separation of photogenerated carriers and prolonged lifetime, more photoexcited electrons with high reduction ability could contribute to the production of H2 . Possible formation mechanism of 2D-2D WO3 /g-C3 N4 nanosheets via scCO2 in the reverse microemulsion system by the one-pot method has been proposed. This work provides an efficient and green strategy to synthesize 2D-2D heterojunction for the utilization in solar-to-fuel conversion.
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Affiliation(s)
- Shaoru Tang
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Yanan Ma
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Haimeng Wang
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Yuxuan Liang
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Xiaoyang Xu
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Dingyu Zhang
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Beiming Cao
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Qian Wang
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Wei Li
- Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
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42
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Sutter P, Komsa HP, Kisslinger K, Sutter E. Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics. ACS NANO 2023; 17:9552-9564. [PMID: 37144978 DOI: 10.1021/acsnano.3c02411] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. The results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.
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Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Hannu-Pekka Komsa
- Microelectronics Research Unit, University of Oulu, FI-90014 Oulu, Finland
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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43
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Chen D, Wang L, Lv Y, Liao L, Li K, Jiang C. Insights into electronic properties of strained two-dimensional semiconductors by out-of-plane bending. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:284001. [PMID: 37040788 DOI: 10.1088/1361-648x/accbf6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 04/11/2023] [Indexed: 06/19/2023]
Abstract
Strain engineering is an important strategy to modulate the electronic and optical properties of two-dimensional (2D) semiconductors. In experiments, an effective and feasible method to induce strains on 2D semiconductors is the out-of-plane bending. However, in contrast to the in-plane methods, it will generate a combined strain effect on 2D semiconductors, which deserves further explorations. In this work, we theoretically investigate the carrier transport-related electronic properties of arsenene, antimonene, phosphorene, and MoS2under the out-of-plane bending. The bending effect can be disassembled into the in-plane and out-of-plane rolling strains. We find that the rolling always degrades the transport performance, while the in-plane strain could boost carrier mobilities by restraining the intervalley scattering. In other words, pursuing the maximum in-plane strain at the expense of minimum rolling should be the primary strategy to promote transports in 2D semiconductors through bending. Electrons in 2D semiconductors usually suffer from the serious intervalley scattering caused by optical phonons. The in-plane strain can break the crystal symmetry and separate nonequivalent energy valleys at band edges energetically, confining carrier transports at the Brillouin zone Γ point and eliminating the intervalley scattering. Investigation results show that the arsenene and antimonene are suitable for the bending technology, because of their small layer thicknesses which can relieve the rolling burden. Their electron and hole mobilities can be doubled simultaneously, compared with their unstrained 2D structures. From this study, the rules for the out-of-plane bending technology towards promoting transport abilities in 2D semiconductors are obtained.
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Affiliation(s)
- Daohong Chen
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Leixi Wang
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yawei Lv
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Lei Liao
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Kenli Li
- College of Information Science and Engineering, National Supercomputing Center in Changsha, Hunan University, Changsha 410082, People's Republic of China
| | - Changzhong Jiang
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
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44
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Guan H, Zhao B, Zhao W, Ni Z. Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides. MATERIALS HORIZONS 2023; 10:1105-1120. [PMID: 36628937 DOI: 10.1039/d2mh01207c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.
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Affiliation(s)
- Huiyan Guan
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China.
- Purple Mountain Laboratories, Nanjing 211111, China
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45
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Zhang G, Huang S, Chaves A, Yan H. Black Phosphorus as Tunable Van der Waals Quantum Wells with High Optical Quality. ACS NANO 2023; 17:6073-6080. [PMID: 36912761 DOI: 10.1021/acsnano.3c00904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Van der Waals quantum wells, naturally formed in two-dimensional layered materials with nanoscale thickness, possess many inherent advantages over conventional molecular beam epitaxy grown counterparts, and could bring up intriguing physics and applications. However, optical transitions originated from the series of quantized states in these emerging quantum wells are still elusive. Here, we show that multilayer black phosphorus appears to be an excellent candidate for van der Waals quantum wells with well-defined subbands and high optical quality. Using infrared absorption spectroscopy, we probe subband structures of multilayer black phosphorus with tens of atomic layers, revealing clear signatures for optical transitions with subband index as high as 10, far from what was attainable previously. Surprisingly, in addition to allowed transitions, an unexpected series of "forbidden" transitions is also evidently observed, which enables us to determine energy spacings separately for conduction and valence subbands. Furthermore, the linear tunability of subband spacings by temperature and strain is demonstrated. Our results are expected to facilitate potential applications for infrared optoelectronics based on tunable van der Waals quantum wells.
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Affiliation(s)
- Guowei Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, Shaanxi, China
| | - Shenyang Huang
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, Shanghai 200433, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Andrey Chaves
- Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Hugen Yan
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, Shanghai 200433, China
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46
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Xing F, Ji G, Li Z, Zhong W, Wang F, Liu Z, Xin W, Tian J. Preparation, properties and applications of two-dimensional superlattices. MATERIALS HORIZONS 2023; 10:722-744. [PMID: 36562255 DOI: 10.1039/d2mh01206e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.
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Affiliation(s)
- Fei Xing
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Guangmin Ji
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Zongwen Li
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Feiyue Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zhibo Liu
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Jianguo Tian
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
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47
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Liu P, Schleusener A, Zieger G, Bochmann A, van Spronsen MA, Sivakov V. Nanostructured Silicon Matrix for Materials Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206318. [PMID: 36642786 DOI: 10.1002/smll.202206318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 12/20/2022] [Indexed: 06/17/2023]
Abstract
Tin-containing layers with different degrees of oxidation are uniformly distributed along the length of silicon nanowires formed by a top-down method by applying metalorganic chemical vapor deposition. The electronic and atomic structure of the obtained layers is investigated by applying nondestructive surface-sensitive X-ray absorption near edge spectroscopy using synchrotron radiation. The results demonstrated, for the first time, a distribution effect of the tin-containing phases in the nanostructured silicon matrix compared to the results obtained for planar structures at the same deposition temperatures. The amount and distribution of tin-containing phases can be effectively varied and controlled by adjusting the geometric parameters (pore diameter and length) of the initial matrix of nanostructured silicon. Due to the occurrence of intense interactions between precursor molecules and decomposition by-products in the nanocapillary, as a consequence of random thermal motion of molecules in the nanocapillary, which leads to additional kinetic energy and formation of reducing agents, resulting in effective reduction of tin-based compounds to a metallic tin state for molecules with the highest penetration depth in the nanostructured silicon matrix. This effect will enable clear control of the phase distributions of functional materials in 3D matrices for a wide range of applications.
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Affiliation(s)
- Poting Liu
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, 07743, Jena, Germany
| | - Alexander Schleusener
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, 07743, Jena, Germany
- Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Gabriel Zieger
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
| | - Arne Bochmann
- Ernst Abbe University of Applied Science, Carl-Zeiss-Promenade 2, 07745, Jena, Germany
| | | | - Vladimir Sivakov
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
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48
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Zhang R, Jiang J, Wu W. Wearable chemical sensors based on 2D materials for healthcare applications. NANOSCALE 2023; 15:3079-3105. [PMID: 36723394 DOI: 10.1039/d2nr05447g] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Chemical sensors worn on the body could make possible the continuous, noninvasive, and accurate monitoring of vital human signals, which is necessary for remote health monitoring and telemedicine. Attractive for creating high-performance, wearable chemical sensors are atomically thin materials with intriguing physical features, abundant chemistry, and high surface-to-volume ratios. These advantages allow for appropriate material-analyte interactions, resulting in a high level of sensitivity even at trace analyte concentrations. Previous review articles covered the material and device elements of 2D material-based wearable devices extensively. In contrast, little research has addressed the existing state, future outlook, and promise of 2D materials for wearable chemical sensors. We provide an overview of recent advances in 2D-material-based wearable chemical sensors to overcome this deficiency. The structure design, manufacturing techniques, and mechanisms of 2D material-based wearable chemical sensors will be evaluated, as well as their applicability in human health monitoring. Importantly, we present a thorough review of the current state of the art and the technological gaps that would enable the future design and nanomanufacturing of 2D materials and wearable chemical sensors. Finally, we explore the challenges and opportunities associated with designing and implementing 2D wearable chemical sensors.
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Affiliation(s)
- Ruifang Zhang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Jing Jiang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
- Regenstrief Center for Healthcare Engineering, Purdue University, West Lafayette, Indiana 47907, USA
- The Center for Education and Research in Information Assurance and Security (CERIAS), Purdue University, West Lafayette, IN 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
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49
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Zhou X, Jin Z, Zhang J, Hu K, Liu S, Qiu HJ, Lin X. Curvature effects on the bifunctional oxygen catalytic performance of single atom metal-N-C. NANOSCALE 2023; 15:2276-2284. [PMID: 36633321 DOI: 10.1039/d2nr05974f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Understanding the fundamental relationship between the structural information of electrocatalysts and their catalytic activities plays a key role in controlling many important electrochemical processes. Recently, single-atom catalysts (SACs) with the so-called MN4 structure, consisting of a central transition metal quadruply bound to four pyridine nitrogen atoms all situated in an extended carbon-based matrix, have attracted intensive scientific attention owing to their exceptional catalytic performance. In this work, we perform the first-principles density functional theory (DFT) calculations to explore the curvature effects of the carbon matrix surfaces on the catalytic activities for two fundamental electrochemical processes, namely, the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER). Our DFT results suggest that the curved surface structure can weaken the interaction between the metal atom and the N-doped carbon matrix, modify the electronic structure of the metal atom, and thus increase the adsorption strength of the reaction intermediates, resulting in enhanced OER and ORR catalytic activities of MN4 catalysts. More importantly, a prediction model is developed to evaluate the bifunctional catalytic activities of such catalysts based on their directly obtained parameters including the surface curvature of the catalysts, the number of d electrons of the metal element, and the electronegativity of the metal atom and its coordination atoms in MN4 catalysts. This prediction model not only provides some candidates, for example, FeN4, CoN4 and OsN4 for the ORR; CoN4, NiN4, RuN4, RhN4 and IrN4 for the OER; and CoN4, RuN4, IrN4 and OsN4 for the bifunctional ORR and OER, but also reasonably links the structure of catalysts with their catalytic performance, providing new possibilities for the quick design of high-performance catalysts.
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Affiliation(s)
- Xuyan Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
- Blockchain Development and Research Institute, Harbin Institute of Technology, Shenzhen 518055, China
| | - Zeyu Jin
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
- Blockchain Development and Research Institute, Harbin Institute of Technology, Shenzhen 518055, China
| | - Jingzi Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
- Blockchain Development and Research Institute, Harbin Institute of Technology, Shenzhen 518055, China
| | - Kailong Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
- Blockchain Development and Research Institute, Harbin Institute of Technology, Shenzhen 518055, China
| | - Sida Liu
- Institute for Advanced Technology, Shandong University, Jinan 250061, China.
| | - Hua-Jun Qiu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
- Blockchain Development and Research Institute, Harbin Institute of Technology, Shenzhen 518055, China
| | - Xi Lin
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
- Blockchain Development and Research Institute, Harbin Institute of Technology, Shenzhen 518055, China
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
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50
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Duan F, Wei D, Chen A, Zheng X, Wang H, Qin G. Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications. NANOSCALE 2023; 15:1459-1483. [PMID: 36541854 DOI: 10.1039/d2nr06413h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.
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Affiliation(s)
- Fuqing Duan
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Donghai Wei
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Ailing Chen
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Xiong Zheng
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Huimin Wang
- Hunan Key Laboratory for Micro-Nano Energy Materials & Device and School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Guangzhao Qin
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
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