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Zhou J, Xu S, Shuai Y, Sun Q, Ma H, Wang C, Wu H, Tan S, Wang Z, Yang L. Decipher the Wavelength and Intensity Using Photothermoelectric Detectors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39194354 DOI: 10.1021/acsami.4c10489] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/29/2024]
Abstract
Broadband photodetectors that can decipher the wavelength (λ) and intensity (I) of an unknown incident light are urgently demanded. Photothermoelectric (PTE) detectors can achieve ultrabroadband photodetection surpassing the bandgap limitation; however, their practical application is severely hampered by the lack of deciphering strategy. In this work, we report a variable elimination method to decipher λ and I of the incident lights based on an integrated Ag2Se film-based PTE detector. Nanostructured Ag2Se films with controlled thickness are synthesized using an ion sputtering of Ag and a room-temperature selenization method and then assembled into a detector. Under identical illumination, Ag2Se films of different thicknesses produce varying output photothermal voltages, influenced by factors including λ. By establishing a direct relationship between the photothermal voltage and the absorption of Ag2Se films of varied thickness, we successfully eliminate variables independent of λ, thus determining λ. Subsequently, I is determined by the calibrated responsivity relationship using obtained λ. Our PTE detector achieves a broadband spectrum from 400 to 950 nm and high accuracy, with deviations as low as ∼2.63 and ∼0.53% for deciphered λ and I, respectively. This method allows for self-powered broadband decipherable photodetection without a complex device architecture or computational assistance, which could boost the research enthusiasm and promote the commercialization of PTE broadband detectors.
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Affiliation(s)
- Jiamin Zhou
- School of Materials Science & Engineering, Sichuan University, Chengdu, Sichuan 610064, People's Republic of China
| | - Shengduo Xu
- Institute of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Yi Shuai
- School of Materials Science & Engineering, Sichuan University, Chengdu, Sichuan 610064, People's Republic of China
| | - Qiang Sun
- State Key Laboratory of Oral Diseases, National Clinical Research Center for Oral Diseases, West China Hospital of Stomatology, Sichuan University, Chengdu, Sichuan 610041, People's Republic of China
| | - Huangshui Ma
- State Key Laboratory of Oral Diseases, National Clinical Research Center for Oral Diseases, West China Hospital of Stomatology, Sichuan University, Chengdu, Sichuan 610041, People's Republic of China
| | - Chao Wang
- Southwest Institute of Technical Physics, Chengdu, Sichuan 610041, People's Republic of China
| | - Haijuan Wu
- School of Materials Science & Engineering, Sichuan University, Chengdu, Sichuan 610064, People's Republic of China
| | - Shanshan Tan
- School of Materials Science & Engineering, Sichuan University, Chengdu, Sichuan 610064, People's Republic of China
| | - Zegao Wang
- School of Materials Science & Engineering, Sichuan University, Chengdu, Sichuan 610064, People's Republic of China
| | - Lei Yang
- School of Materials Science & Engineering, Sichuan University, Chengdu, Sichuan 610064, People's Republic of China
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2
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Zhang Y, Abdi-Jalebi M, Larson BW, Zhang F. What Matters for the Charge Transport of 2D Perovskites? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404517. [PMID: 38779825 DOI: 10.1002/adma.202404517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Compared to 3D perovskites, 2D perovskites exhibit excellent stability, structural diversity, and tunable bandgaps, making them highly promising for applications in solar cells, light-emitting diodes, and photodetectors. However, the trade-off for worse charge transport is a critical issue that needs to be addressed. This comprehensive review first discusses the structure of 3D and 2D metal halide perovskites, then summarizes the significant factors influencing charge transport in detail and provides a brief overview of the testing methods. Subsequently, various strategies to improve the charge transport are presented, including tuning A'-site organic spacer cations, A-site cations, B-site metal cations, and X-site halide ions. Finally, an outlook on the future development of improving the 2D perovskites' charge transport is discussed.
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Affiliation(s)
- Yixin Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Mojtaba Abdi-Jalebi
- Institute for Materials Discovery, University College London, London, WC1E 7JE, UK
| | - Bryon W Larson
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Fei Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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3
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Ou X, Gao F. Blossoms in perovskite planar X-ray detectors. Nat Commun 2024; 15:5754. [PMID: 38982081 PMCID: PMC11233596 DOI: 10.1038/s41467-024-50179-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Accepted: 07/03/2024] [Indexed: 07/11/2024] Open
Affiliation(s)
- Xiangyu Ou
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.
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Li H, Zhang T, Yi Z, Chen X, Dai Z, Tan J. High Sensitive and Stable UV-Vis Photodetector Based on MoS 2/MoO 3 vdW Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:33829-33837. [PMID: 38913340 DOI: 10.1021/acsami.4c06403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/25/2024]
Abstract
The development of new high-performance photodetectors (PDs) is currently focused on achieving small size, low power consumption, low cost, and large bandwidth. Two-dimensional (2D) materials and heterostructures offer promising approaches for the future development of optoelectronic devices. However, there has been limited research on 2D wide-bandgap semiconductor heterostructures. In this study, we successfully constructed a MoS2/MoO3 vdW heterojunction PD. This PD exhibited excellent response and significant photovoltaic behavior in the ultraviolet (UV) to visible (Vis) range. Under 365 nm UV light and 1 V bias voltage, the PD demonstrated a high responsivity of 645 mA/W, a high specific detectivity of 8.98 × 1010 Jones, and fast response speeds of 55.9/59.6 ms. At 0 V bias voltage, the responsivity reached as high as 157 mA/W. Furthermore, the PD exhibited remarkable stability in its performance. These outstanding characteristics can be attributed to the strong internal electric field created by the type II heterojunction structure and the chemical stability of the materials. This work opens a route for the application of 2D wide-bandgap semiconductor materials in optoelectronic devices.
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Affiliation(s)
- Haoyu Li
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Tian Zhang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Zixuan Yi
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Xingyu Chen
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Zhigao Dai
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Jin Tan
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
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5
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Yin H, Pang J, Zhao S, Wu H, Song Z, Li X, Zheng Z, Xu L, Tang J, Niu G. Retinomorphic X-ray detection using perovskite with hydrion-conductive organic cations. Innovation (N Y) 2024; 5:100654. [PMID: 39021527 PMCID: PMC11253655 DOI: 10.1016/j.xinn.2024.100654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Accepted: 06/03/2024] [Indexed: 07/20/2024] Open
Abstract
X-ray detection is crucial across various sectors, but traditional techniques face challenges such as inefficient data transmission, redundant sensing, high power consumption, and complexity. The innovative idea of a retinomorphic X-ray detector shows great potential. However, its implementation has been hindered by the absence of active layers capable of both detecting X-rays and serving as memory storage. In response to this critical gap, our study integrates hybrid perovskite with hydrion-conductive organic cations to develop a groundbreaking retinomorphic X-ray detector. This novel device stands at the nexus of technological innovation, utilizing X-ray detection, memory, and preprocessing capabilities within a single hardware platform. The core mechanism underlying this innovation lies in the transport of electrons and holes within the metal halide octahedral frameworks, enabling precise X-ray detection. Concurrently, the hydrion movement through organic cations endows the device with short-term resistive memory, facilitating rapid data processing and retrieval. Notably, our retinomorphic X-ray detector boasts an array of formidable features, including reconfigurable short-term memory, a linear response curve, and an extended retention time. In practical terms, this translates into the efficient capture of motion projections with minimal redundant data, achieving a compression ratio of 18.06% and an impressive recognition accuracy of up to 98.6%. In essence, our prototype represents a paradigm shift in X-ray detection technology. With its transformative capabilities, this retinomorphic hardware is poised to revolutionize the existing X-ray detection landscape.
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Affiliation(s)
- Hang Yin
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jincong Pang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shan Zhao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Haodi Wu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zihao Song
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xing Li
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
| | - Zhiping Zheng
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
| | - Ling Xu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
- Research Institute of Huazhong University of science and technology in Shenzhen, Shenzhen 518057, China
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6
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Dong S, Hu Y, Zhang X, Guo Z, Chen R, Mao L. Anisotropy of Anion Diffusion in All-Inorganic Perovskite Single Crystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307360. [PMID: 38217294 DOI: 10.1002/smll.202307360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 01/02/2024] [Indexed: 01/15/2024]
Abstract
Ion diffusion is a fundamentally important process in understanding and manipulating the optoelectronic properties of semiconductors. Most current studies on ionic diffusion have been focusing on perovskite polycrystalline thin films and nanocrystals. However, the random orientation and grain boundaries can heavily interfere with the kinetics of ion diffusion, where the experimental results only reveal the average ion exchange kinetics and the actual ion diffusion mechanisms perpendicular to the direction of individual crystal facets remain unclear. Here, the anion (Cl, I) diffusion anisotropy on (111) and (100) facets of CsPbBr3 single crystals is demonstrated. The as-grown single crystals with (111) and (100) facets exhibit anisotropic growth with different halide incorporation, which lead to different resulting optoelectronic properties. Combined experimental characterizations and theoretical calculations reveal that the (111) CsPbBr3 shows a faster anion diffusion behavior compared with that of the (100) CsPbBr3, with a lower diffusion energy barrier, a larger built-in electric field, and lower inverse defect formation energy. The work highlights the anion diffusion anisotropic mechanisms perpendicular to the direction of individual crystal facets for optimizing and designing perovskite optoelectronic devices.
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Affiliation(s)
- Shunhong Dong
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Xuanyu Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Zhu Guo
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Lingling Mao
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
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7
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Zhang C, Wang H, Huang W, Zuo Y, Cheng J. A Systematical Study on Bands and Defects of CsBX 3 (B = Pb, Sn, Ge, X = Cl, Br, I) Perovskite Based on First Principles. Molecules 2024; 29:2479. [PMID: 38893354 PMCID: PMC11173484 DOI: 10.3390/molecules29112479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 05/09/2024] [Accepted: 05/14/2024] [Indexed: 06/21/2024] Open
Abstract
Metal halide perovskites have attracted considerable attention as novel optoelectronic materials for their excellent optical and electrical properties. Inorganic perovskites (CsPbX3, X = Cl, Br, I) are now viable alternative candidates for third-generation photovoltaic technology because of their high photoelectric conversion efficiency, high carrier mobility, good defect tolerance, simple preparation method and many other advantages. However, the toxicity of lead is problematic for practical implementation. Thus, the fabrication of lead-free perovskite materials and devices has been actively conducted. In this work, the energy band and photoelectric properties of inorganic perovskites CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) have been investigated with the first principles calculation, and the possible defect energy levels and their formation energies in different components, in particular, have been systematically studied. The advantages and disadvantages of Sn and Ge as replacement elements for Pb have been demonstrated from the perspective of defects. This study provides an important basis for the study of the properties and applications of lead-free perovskites.
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Affiliation(s)
- Chunqian Zhang
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Hao Wang
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Wenqi Huang
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Yuhua Zuo
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Jin Cheng
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
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8
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Yang S, Tang Z, Qu B, Xiao L, Chen Z. Crown-Assisted CsCu 2I 3 Growth and Trap Passivation for Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38608287 DOI: 10.1021/acsami.4c01048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Copper (Cu)-based perovskites are promising for lead-free perovskite light-emitting diodes (PeLEDs). However, it remains a significant challenge to achieve high performance devices due to the nonradiative loss caused by the disordered crystallization and lack of passivation. Crown ethers are known to form host-guest complexes by the interaction between C-O-C groups and certain cations, and 18-crown-6 (18C6) with an appropriate complementary size can interact with Cs+ and Cu+ cations. Herein, we studied the interaction between CsCu2I3 and two crowns with the same cyclic size, 18C6 and dibenzo-18-crown-6 (D18C6). Particularly, D18C6 can reduce the nonradiative recombination rate of CsCu2I3 film by passivating the defects and optimizing the film morphology effectively. The room mean square (RMS) decreased from 5.06 to 2.95 nm, and the PLQY was promoted from 4.71% to 19.9%. Besides, D18C6 can also decrease the barrier of hole injection. The PeLEDs based on D18C6-modified CsCu2I3 realized noticeable improvement with a maximum luminance and EQE of 583 cd/m2 and 0.662%, respectively.
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Affiliation(s)
- Shuang Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Zhenyu Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Bo Qu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Lixin Xiao
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Zhijian Chen
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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9
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Guo L, Song Y, Wang B, Cong R, Zhao L, Zhang S, Li L, Wu W, Wang S, San X, Pan C, Yang Z. Surface Passivation to Enhance the Interfacial Pyro-Phototronic Effect for Self-Powered Photodetection Based on Perovskite Single Crystals. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16482-16493. [PMID: 38506366 DOI: 10.1021/acsami.4c00302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/21/2024]
Abstract
The interfacial pyro-phototronic effect (IPPE) presents a novel approach for improving the performance of self-powered photodetectors (PDs) based on metal halide perovskites (MHPs). The interfacial contact conditions within the Schottky junctions are crucial in facilitating the IPPE phenomenon. However, the fabrication of an ideal Schottky junction utilizing MHPs is a challenging endeavor. In this study, we present a surface passivation method aimed at enhancing the performance of self-powered photodetectors based on inverted planar perovskite structures in micro- and nanoscale metal-halide perovskite SCs. Our findings demonstrate that the incorporation of a lead halide salt with a benzene ring moiety for surface passivation leads to a substantial improvement in photoresponses by means of the IPPE. Conversely, the inclusion of an alkane chain in the salt impedes the IPPE. The underlying mechanism can be elucidated through an examination of the band structure, particularly the work function (WF) modulated by surface passivation. Consequently, this alteration affects the band bending and the built-in field (VBi) at the interface. This strategy presents a feasible and effective method for producing interfacial pyroelectricity in MHPs, thus facilitating its potential application in practical contexts such as energy conversion and infrared sensors.
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Affiliation(s)
- Linjuan Guo
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Yi Song
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Baorong Wang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Ridong Cong
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Lei Zhao
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Suheng Zhang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Leipeng Li
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
- Institute of Life Science and Green Development, Hebei University, Baoding 071002, P. R. China
| | - Wenqiang Wu
- Institute of Atomic Manufacturing, Beihang University, Beijing 100191, P. R. China
| | - Shufang Wang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Xingyuan San
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Caofeng Pan
- Institute of Atomic Manufacturing, Beihang University, Beijing 100191, P. R. China
| | - Zheng Yang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
- Institute of Life Science and Green Development, Hebei University, Baoding 071002, P. R. China
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10
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Jia W, Zhao Q, Zhuang Y, Wei Y, Tian J, Wang C, Qiao J, Shi G, Shang J, Cheng Q, Pang S, Wang K, Rong ZQ, Huang W. Interfacial Rivet to Fill Structural Defects: A Spacer Engineering Gift for 3D Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310444. [PMID: 38100278 DOI: 10.1002/adma.202310444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 12/03/2023] [Indexed: 12/17/2023]
Abstract
The combination of 2D and 3D perovskites to passivate surfaces or interfaces with a high concentration of defects shows great promise for improving the efficiency of perovskite solar cells (PSCs). Constructing high-quality perovskite film systems by precisely modulating 2D perovskites with good morphologies and growth sites on 3D perovskite films remains a formidable challenge due to the complexity of spacer-engineered surface reactions. In this study, phase-pure 2D (HA)2(MA)n-1PbnI3n+1 perovskites with a controlled number of layers (n) are separated on a large scale and exploited as interface rivets to optimize 3D perovskite films, resulting in tunable film structural defects and grain boundaries. The optimized PSCs system benefits from a reduction in non-radiative recombination, resulting in improved optical performance, higher mobility, and lower trap density. The corresponding device achieves a champion power conversion efficiency (PCE) of more than 25%, especially for voltage (VOC) and fill factor (FF). The quality and uniformity of the perovskite films are further confirmed using large-area devices with an active area of 14 cm2, which exhibits a PCE of more than 21.24%. The high-quality thin-film system based on the 2D perovskites presented herein provides a new perspective for improving the efficiency and stability of PSCs.
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Affiliation(s)
- Wei Jia
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Qiangqiang Zhao
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
| | - Yan Zhuang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Yulin Wei
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Juanhua Tian
- Department of Urology, Second Affiliated Hospital of Xi'an Jiaotong University, West Five Road, No. 157, Xi'an, 710004, China
| | - Chenyun Wang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Jingyuan Qiao
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Guangchao Shi
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Jingzhi Shang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Qi Cheng
- NCO School, Army Medical University, Shijiazhuang, 050000, China
| | - Shuping Pang
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
| | - Kai Wang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Zi-Qiang Rong
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
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11
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Zhang W, Wang H, Chen Z, Wang P, Liu X, Dong H, Zhao J, Cui Y, Shao Y. High-Performance and Stable Perovskite X-ray Detection and Imaging Based on a Ti Cathode. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38416069 DOI: 10.1021/acsami.3c18116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
High-energy radiation detectors with a good imaging resolution, fast response, and high sensitivity are desired to operate at a high electric field. However, strong ion migration triggered by electrochemical reactions at the interface between a high-potential electrode and an organic-inorganic hybrid perovskite limits the stability of radiation detectors under a high electric field. Herein, we demonstrate that such ion migration could be effectively suppressed in devices with a Ti cathode, even at a high electric field of 50 V mm-1, through time-of-flight secondary-ion mass spectrometry. X-ray photoelectron spectroscopy illustrates that Ti-N bonds formed at the interface of MAPbBr3 perovskite single crystals/Ti electrode effectively inhibit the electrochemical reaction in organic-inorganic hybrid perovskite devices and ultimately improve the operating stability under a high electric field. The device with a Ti electrode reaches a high sensitivity of 96 ± 1 mC Gyair-1 cm-2 and a low detection limit of 2.8 ± 0.3 nGy s-1 under hard X-ray energy.
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Affiliation(s)
- Wenqing Zhang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Zhilong Chen
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Pengxiang Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Xin Liu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hao Dong
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- School of Microelectronics, Shanghai University, Shanghai 201899, China
| | - Jiaoling Zhao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Yun Cui
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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12
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Pang J, Wu H, Li H, Jin T, Tang J, Niu G. Reconfigurable perovskite X-ray detector for intelligent imaging. Nat Commun 2024; 15:1769. [PMID: 38413618 PMCID: PMC10899650 DOI: 10.1038/s41467-024-46184-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2023] [Accepted: 02/16/2024] [Indexed: 02/29/2024] Open
Abstract
X-ray detection is widely used in various applications. However, to meet the demand for high image quality and high accuracy diagnosis, the raw data increases and imposes challenges for conventional X-ray detection hardware regarding data transmission and power consumption. To tackle these issues, we present a scheme of in-X-ray-detector computing based on CsPbBr3 single-crystal detector with convenient polarity reconfigurability, good linear dynamic range, and robust stability. The detector features a stable trap-free device structure and achieves a high linear dynamic range of 106 dB. As a result, the detector could achieve edge extraction imaging with a data compression ratio of ~50%, and could also be programmed and trained to perform pattern recognition tasks with a high accuracy of 100%. Our research shows that in-X-ray-detector computing can be used in flexible and complex scenarios, making it a promising platform for intelligent X-ray imaging.
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Affiliation(s)
- Jincong Pang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Haodi Wu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Hao Li
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Tong Jin
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
- Optical Valley Laboratory, 430074, Wuhan, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China.
- Optical Valley Laboratory, 430074, Wuhan, China.
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13
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Sun K, Zhang B, Gao K, Song J, Li X, Fan K, Chen C, Chen D, Wang Z, Cao Y, Xu B, Tan D, Qiu J. Localized Temperature Engineering Enables Writing of Heterostructures in Glass for Polarized Photoluminescence of Perovskites. ACS NANO 2024; 18:6550-6557. [PMID: 38353478 DOI: 10.1021/acsnano.3c12356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
Metal halide perovskite (MHP) structures that exhibit polarized photoluminescence (PL) have attracted significant interest in fabricating light field regulation elements for display, imaging, and information storage applications. We report a three-dimensional direct lithography of heterostructures for controllable polarized PL inside glass by laser-induced localized temperature engineering. The heterostructures consisted of oriented periodic structures (OPSs) and MHP nanocrystals, and the mechanism for hierarchical distribution of heterostructures was illustrated. The patterning of heterostructures for manipulable polarized PL can be used for information encryption, wave-plate, and polarized micro-LEDs.
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Affiliation(s)
- Ke Sun
- Zhejiang Lab, Hangzhou 311121, China
| | - Bo Zhang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Kai Gao
- Zhejiang Lab, Hangzhou 311121, China
| | - Juan Song
- College of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Xinkuo Li
- Zhejiang Lab, Hangzhou 311121, China
- School of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Kailong Fan
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | | | - Daoyuan Chen
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zhuo Wang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yu Cao
- China International Science & Technology Cooperation Base for Laser Processing Robotics, Wenzhou University, Wenzhou 325035, China
| | - Beibei Xu
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Dezhi Tan
- Zhejiang Lab, Hangzhou 311121, China
- School of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jianrong Qiu
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
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14
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Zhao D, Gao R, Cheng W, Wen M, Zhang X, Yokota T, Sellin P, Yang SA, Shang L, Zhou C, Someya T, Jie W, Xu Y. Heavy-to-light electron transition enabling real-time spectra detection of charged particles by a biocompatible semiconductor. Nat Commun 2024; 15:1115. [PMID: 38321015 PMCID: PMC10847108 DOI: 10.1038/s41467-024-45089-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 01/15/2024] [Indexed: 02/08/2024] Open
Abstract
The current challenge of wearable/implantable personal dosimeters for medical diagnosis and radiotherapy applications is lack of suitable detector materials possessing both excellent detection performance and biocompatibility. Here, we report a solution-grown biocompatible organic single crystalline semiconductor (OSCS), 4-Hydroxyphenylacetic acid (4HPA), achieving real-time spectral detection of charged particles with single-particle sensitivity. Along in-plane direction, two-dimensional anisotropic 4HPA exhibits a large electron drift velocity of 5 × 105 cm s-1 at "radiation-mode" while maintaining a high resistivity of (1.28 ± 0.003) × 1012 Ω·cm at "dark-mode" due to influence of dense π-π overlaps and high-energy L1 level. Therefore, 4HPA detectors exhibit the record spectra detection of charged particles among their organic counterparts, with energy resolution of 36%, (μt)e of (4.91 ± 0.07) × 10-5 cm2 V-1, and detection time down to 3 ms. These detectors also show high X-ray detection sensitivity of 16,612 μC Gyabs-1 cm-3, detection of limit of 20 nGyair s-1, and long-term stability after 690 Gyair irradiation.
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Affiliation(s)
- Dou Zhao
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, Shaanxi, China
- Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Ruiling Gao
- International Center of Quantum and Molecular Structures, Shanghai University, 200444, Shanghai, China
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Wei Cheng
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, 211106, Nanjing, China
| | - Mengyao Wen
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, Shaanxi, China
| | - Xinlei Zhang
- School of Physics and Information Technology, Shaanxi Normal University, 710119, Xi'an, Shaanxi, China
| | - Tomoyuki Yokota
- Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Paul Sellin
- Department of Physics, University of Surrey, Guildford, GU2 7XH, UK
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Li Shang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, Shaanxi, China
| | - Chongjian Zhou
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, Shaanxi, China
| | - Takao Someya
- Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, 113-8656, Japan.
| | - Wanqi Jie
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, Shaanxi, China.
| | - Yadong Xu
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, Shaanxi, China.
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15
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Kim TH, Choi YK, Lee GM, Saeed MA, Jung BK, Lee MJ, Choi HJ, Oh SJ, Shim JW. Ultra-Low Noise Level Infrared Quantum Dot Photodiodes with Self-Screenable Polymeric Optical Window. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309028. [PMID: 37991324 DOI: 10.1002/adma.202309028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 11/20/2023] [Indexed: 11/23/2023]
Abstract
Quantum dot photodiodes (QPDs) have garnered significant attention because of their unparalleled near-infrared (NIR) detection capabilities, primarily attributable to their size-dependent bandgap tunability. Nevertheless, the broadband absorption spectrum of QPD engenders substantial noise floor within superfluous visible light regions, notably hindering their use in several emerging applications necessitating the detection of faint micro-light signals. To overcome these hurdles, a self-screenable NIR QPD featuring an internal optical filter with a thick polymeric interlayer to reduce electronic noise is demonstrated. This effectively screens out undesirable visible light regions while reducing the ionized defect owing to decreased density of state, yielding an extremely low dark current (≈1010 A cm-2 at V = -1 V). Consequently, the electronic noise spectral density is attained at levels below ≈10-27 -10-28 A2 Hz-1 , and responsivity (R) dropped to 92% within the visible light spectrum.
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Affiliation(s)
- Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Young Kyun Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Gyeong Min Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Muhammad Ahsan Saeed
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Min Jong Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hyung Jin Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
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16
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Kim TH, Yu BS, Ko HW, Park NW, Saeed MA, Ahn J, Jo S, Kim DY, Yoon SK, Lee KH, Jeong SY, Woo HY, Kim HJ, Kim TG, Park J, Park MC, Hwang DK, Shim JW. Self-Powering Sensory Device with Multi-Spectrum Image Realization for Smart Indoor Environments. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307523. [PMID: 37972308 DOI: 10.1002/adma.202307523] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Revised: 11/02/2023] [Indexed: 11/19/2023]
Abstract
The development of organic-based optoelectronic technologies for the indoor Internet of Things market, which relies on ambient energy sources, has increased, with organic photovoltaics (OPVs) and photodetectors (OPDs) considered promising candidates for sustainable indoor electronic devices. However, the manufacturing processes of standalone OPVs and OPDs can be complex and costly, resulting in high production costs and limited scalability, thus limiting their use in a wide range of indoor applications. This study uses a multi-component photoactive structure to develop a self-powering dual-functional sensory device with effective energy harvesting and sensing capabilities. The optimized device demonstrates improved free-charge generation yield by quantifying charge carrier dynamics, with a high output power density of over 81 and 76 µW cm-2 for rigid and flexible OPVs under indoor conditions (LED 1000 lx (5200 K)). Furthermore, a single-pixel image sensor is demonstrated as a feasible prototype for practical indoor operating in commercial settings by leveraging the excellent OPD performance with a linear dynamic range of over 130 dB in photovoltaic mode (no external bias). This apparatus with high-performance OPV-OPD characteristics provides a roadmap for further exploration of the potential, which can lead to synergistic effects for practical multifunctional applications in the real world by their mutual relevance.
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Affiliation(s)
- Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byoung-Soo Yu
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
| | - Hyun Woo Ko
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Department of Computer Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Na Won Park
- Department of Chemistry and Nanoscience, Ewha Womans University, Seoul, 03760, Republic of Korea
| | - Muhammad Ahsan Saeed
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Jongtae Ahn
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Suyeon Jo
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Dae-Yeon Kim
- Department of Art and Technology, Seokyeong University, Seoul, 02713, Republic of Korea
| | - Seon Kyu Yoon
- Spatial Optical Information Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju, 61007, Republic of Korea
| | - Kwang-Hoon Lee
- Spatial Optical Information Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju, 61007, Republic of Korea
| | - Sang Young Jeong
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Hyunwoo J Kim
- Department of Computer Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - JaeHong Park
- Department of Chemistry and Nanoscience, Ewha Womans University, Seoul, 03760, Republic of Korea
| | - Min-Chul Park
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Department of Computer Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
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17
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Li X, Zhang G, Hua Y, Cui F, Sun X, Liu J, Liu H, Bi Y, Yue Z, Zhai Z, Xia H, Tao X. Dimensional and Optoelectronic Tuning of Lead-free Perovskite Cs 3 Bi 2 I 9-n Br n Single Crystals for Enhanced Hard X-ray Detection. Angew Chem Int Ed Engl 2023; 62:e202315817. [PMID: 37885150 DOI: 10.1002/anie.202315817] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 10/25/2023] [Accepted: 10/26/2023] [Indexed: 10/28/2023]
Abstract
Inorganic Bi-based perovskites have shown great potential in X-ray detection for their large absorption to X-rays, diverse low-dimensional structures, and eco-friendliness without toxic metals. However, they suffer from poor carrier transport properties compared to Pb-based perovskites. Here, we propose a mixed-halogen strategy to tune the structural dimensions and optoelectronic properties of Cs3 Bi2 I9-n Brn (0≤n≤9). Ten centimeter-sized single crystals are successfully grown by the Bridgman technique. Upon doping bromine to zero-dimensional Cs3 Bi2 I9 , the crystal transforms into a two-dimensional structure as the bromine content reaches Cs3 Bi2 I8 Br. Correspondingly, the optoelectronic properties are adjusted. Among these crystals, Cs3 Bi2 I8 Br exhibits negligible ion migration, moderate resistivity, and the best carrier transport capability. The sensitivities in 100 keV hard X-ray detection are 1.33×104 and 1.74×104 μC Gyair -1 cm-2 at room temperature and 75 °C, respectively, which are the highest among all reported bismuth perovskites. Moreover, the lowest detection limit of 28.6 nGyair s-1 and ultralow dark current drift of 9.12×10-9 nA cm-1 s-1 V-1 are obtained owing to the high ionic activation energy. Our work demonstrates that Br incorporation is an effective strategy to enhance the X-ray detection performance by tuning the dimensional and optoelectronic properties.
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Affiliation(s)
- Xiang Li
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Guodong Zhang
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yunqiu Hua
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Fucai Cui
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Xue Sun
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Jiaxin Liu
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Hongjie Liu
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yanxiao Bi
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhongjie Yue
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhongjun Zhai
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Haibing Xia
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
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18
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Liu D, Jiang L, Jiang X, Sun X, Zhang G, Lu YB, Wang Y, Wu Z, Ling Z. Interface-Tension-Assisted Temperature-Gradient Crystallization of High-Quality MAPbBr 3 Perovskite Single Crystals with Low Defect Densities. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38016104 DOI: 10.1021/acsami.3c13614] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Comprehensive understanding and precise manipulation of the crystallization process for organic-inorganic hybrid perovskite materials are crucial for advancing perovskite single-crystal optoelectronic technology. In this study, we theoretically and experimentally investigated the influence of interface tension on the synthesis of perovskite single crystals. On the basis of the understanding of the nucleation and growth mechanisms, we developed a polydimethylsiloxane-assisted temperature-gradient growth technique to prepare high-quality MAPbBr3 single crystals. Using this technique, we harvested some high-quality MAPbBr3 single crystals, with the narrowest reported full width at half-maximum (0.00806°) of X-ray diffraction rocking curve, the longest carrier lifetime of 1002 ns, and an ultralow trap-state density of 4.25 × 109 cm-3. Furthermore, the X-ray detector fabricated using our MAPbBr3 single crystal exhibited a high sensitivity of 7275 μC Gy1- cm2 and a low minimum detection limit of 0.67 μGy s-1. This paper presents a novel method to control the crystallization and growth processes of high-quality perovskite single crystals.
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Affiliation(s)
- Dong Liu
- School of Space Science and Physics, Shandong University, Weihai 264209, China
- Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, Institute of Space Science, Shandong University, Weihai264209, China
| | - Li Jiang
- School of Space Science and Physics, Shandong University, Weihai 264209, China
| | - Xianyuan Jiang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xue Sun
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Guodong Zhang
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ying-Bo Lu
- School of Space Science and Physics, Shandong University, Weihai 264209, China
- Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, Institute of Space Science, Shandong University, Weihai264209, China
| | - Yong Wang
- School of Space Science and Physics, Shandong University, Weihai 264209, China
| | - Zhongchen Wu
- School of Space Science and Physics, Shandong University, Weihai 264209, China
- Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, Institute of Space Science, Shandong University, Weihai264209, China
| | - Zongchen Ling
- School of Space Science and Physics, Shandong University, Weihai 264209, China
- Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, Institute of Space Science, Shandong University, Weihai264209, China
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19
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Tang W, Sun Q, Wang ZL. Self-Powered Sensing in Wearable Electronics─A Paradigm Shift Technology. Chem Rev 2023; 123:12105-12134. [PMID: 37871288 PMCID: PMC10636741 DOI: 10.1021/acs.chemrev.3c00305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Revised: 10/04/2023] [Accepted: 10/05/2023] [Indexed: 10/25/2023]
Abstract
With the advancements in materials science and micro/nanoengineering, the field of wearable electronics has experienced a rapid growth and significantly impacted and transformed various aspects of daily human life. These devices enable individuals to conveniently access health assessments without visiting hospitals and provide continuous, detailed monitoring to create comprehensive health data sets for physicians to analyze and diagnose. Nonetheless, several challenges continue to hinder the practical application of wearable electronics, such as skin compliance, biocompatibility, stability, and power supply. In this review, we address the power supply issue and examine recent innovative self-powered technologies for wearable electronics. Specifically, we explore self-powered sensors and self-powered systems, the two primary strategies employed in this field. The former emphasizes the integration of nanogenerator devices as sensing units, thereby reducing overall system power consumption, while the latter focuses on utilizing nanogenerator devices as power sources to drive the entire sensing system. Finally, we present the future challenges and perspectives for self-powered wearable electronics.
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Affiliation(s)
- Wei Tang
- CAS
Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy
and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School
of Nanoscience and Technology, University
of Chinese Academy of Sciences, Beijing 100049, China
- Institute
of Applied Nanotechnology, Jiaxing, Zhejiang 314031, P.R. China
| | - Qijun Sun
- CAS
Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy
and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School
of Nanoscience and Technology, University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhong Lin Wang
- CAS
Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy
and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- Yonsei
Frontier Lab, Yonsei University, Seoul 03722, Republic of Korea
- Georgia
Institute of Technology, Atlanta, Georgia 30332-0245, United States
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Yan T, Ge J, Su L, Liu X, Fang X. Designing Ordered Organic Small-Molecule Domains for Ultraviolet Detection and Micrometer-Sized Flexible Imaging. NANO LETTERS 2023; 23:8295-8302. [PMID: 37638790 DOI: 10.1021/acs.nanolett.3c02511] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/29/2023]
Abstract
Photodetectors displaying an ultraviolet (UV) spectral response window are typically based on wide-bandgap semiconductors that have long been dominated by inorganic materials that suffer from bottlenecks of low flexibility and a limited material family. Here, we synthesized a novel organic small molecule and controlled its crystallization to suppress leakage currents and facilitate separation of the carriers, and the relationship between the nanoscale phase separation morphology and the optoelectrical performance of the photodetectors is disclosed. Our optimized organic photodetector (OPD) presents a UV spectral response window, with superior self-powered responsivities of 45 mA/W (under 250 nm light) and 70 mA/W (under 300 nm light), outperforming the Si photodiode and rivaling other reported UV self-powered photodetectors. Finally, an imaging system was constructed to demonstrate the application potential of the OPD in UV flexible imaging with high-resolution arrays of 400 pixels × 400 pixels (5 μm × 5 μm per pixel), which could work in bent states and successfully output images of micrometer-sized objects.
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Affiliation(s)
- Tingting Yan
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Jinfeng Ge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Xinya Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
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