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Ju Q, Cai Q, Jian C, Hong W, Sun F, Wang B, Liu W. Infrared Interlayer Excitons in Twist-Free MoTe 2/MoS 2 Heterobilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404371. [PMID: 39007276 DOI: 10.1002/adma.202404371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/13/2024] [Indexed: 07/16/2024]
Abstract
Excitonic devices based on interlayer excitons in van der Waals heterobilayers are a promising platform for advancing photoelectric interconnection telecommunications. However, the absence of exciton emission in the crucial telecom C-band has constrained their practical applications. Here, this limitation is addressed by reporting exciton emission at 0.8 eV (1550 nm) in a chemically vapor-deposited, strictly aligned MoTe2/MoS2 heterobilayer, resulting from the direct bandgap transitions of interlayer excitons as identified by momentum-space imaging of their electrons and holes. The decay mechanisms dominated by direct radiative recombination ensure constant emission quantum yields, a basic demand for efficient excitonic devices. The atomically sharp interface enables the resolution of two narrowly-splitter transitions induced by spin-orbit coupling, further distinguished through the distinct Landé g-factors as the fingerprint of spin configurations. By electrical control, the double transitions coupling into opposite circularly-polarized photon modes, preserve or reverse the helicities of the incident light with a degree of polarization up to 90%. The Stark effect tuning extends the emission energy range by over 150 meV (270 nm), covering the telecom C-band. The findings provide a material platform for studying the excitonic complexes and significantly boost the application prospects of excitonic devices in silicon photonics and all-optical telecommunications.
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Affiliation(s)
- Qiankun Ju
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qian Cai
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Chuanyong Jian
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Wenting Hong
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Fapeng Sun
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Bicheng Wang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Wei Liu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
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2
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Zhang H, Fu J, Carvalho A, Poh ET, Chung JY, Feng M, Chen Y, Wang B, Shang Q, Yang H, Zhang Z, Lim SX, Gao W, Gradečak S, Qiu CW, Lu J, He C, Sum TC, Sow CH. Programmable Interfacial Band Configuration in WS 2/Bi 2O 2Se Heterojunctions. ACS NANO 2024; 18:16832-16841. [PMID: 38888500 DOI: 10.1021/acsnano.4c02496] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi2O2Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi2O2Se straddling WS2) to type-II and finally to type-I (WS2 straddling Bi2O2Se) by increasing the thickness of the Bi2O2Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS2 straddles Bi2O2Se, fluorescence-quenched) and type-I (Bi2SeO5 straddles WS2, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS2 without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications.
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Affiliation(s)
- Hanwen Zhang
- Joint School of the National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Jianhui Fu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Alexandra Carvalho
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Eng Tuan Poh
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Jing-Yang Chung
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Applied Materials─NUS Advanced Materials Corporate Lab, Singapore 117608, Singapore
| | - Minjun Feng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Yinzhu Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Bo Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Qiuyu Shang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Hengxing Yang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Zheng Zhang
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore
| | - Sharon Xiaodai Lim
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Silvija Gradečak
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Applied Materials─NUS Advanced Materials Corporate Lab, Singapore 117608, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Junpeng Lu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Chunnian He
- Joint School of the National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300350, People's Republic of China
| | - Tze Chien Sum
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Chorng Haur Sow
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
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3
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Li L, Zhang Q, Geng D, Meng H, Hu W. Atomic engineering of two-dimensional materials via liquid metals. Chem Soc Rev 2024; 53:7158-7201. [PMID: 38847021 DOI: 10.1039/d4cs00295d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Hong Meng
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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4
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Wu Y, Wang Y, Bao D, Deng X, Zhang S, Yu-Chun L, Ke S, Liu J, Liu Y, Wang Z, Ham P, Hanna A, Pan J, Hu X, Li Z, Zhou J, Wang C. Emerging probing perspective of two-dimensional materials physics: terahertz emission spectroscopy. LIGHT, SCIENCE & APPLICATIONS 2024; 13:146. [PMID: 38951490 PMCID: PMC11217405 DOI: 10.1038/s41377-024-01486-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Revised: 04/09/2024] [Accepted: 05/15/2024] [Indexed: 07/03/2024]
Abstract
Terahertz (THz) emission spectroscopy (TES) has emerged as a highly effective and versatile technique for investigating the photoelectric properties of diverse materials and nonlinear physical processes in the past few decades. Concurrently, research on two-dimensional (2D) materials has experienced substantial growth due to their atomically thin structures, exceptional mechanical and optoelectronic properties, and the potential for applications in flexible electronics, sensing, and nanoelectronics. Specifically, these materials offer advantages such as tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. By applying TES to investigate the 2D materials, their interfaces and heterostructures, rich information about the interplay among photons, charges, phonons and spins can be unfolded, which provides fundamental understanding for future applications. Thus it is timely to review the nonlinear processes underlying THz emission in 2D materials including optical rectification, photon-drag, high-order harmonic generation and spin-to-charge conversion, showcasing the rich diversity of the TES employed to unravel the complex nature of these materials. Typical applications based on THz emissions, such as THz lasers, ultrafast imaging and biosensors, are also discussed. Step further, we analyzed the unique advantages of spintronic terahertz emitters and the future technological advancements in the development of new THz generation mechanisms leading to advanced THz sources characterized by wide bandwidth, high power and integration, suitable for industrial and commercial applications. The continuous advancement and integration of TES with the study of 2D materials and heterostructures promise to revolutionize research in different areas, including basic materials physics, novel optoelectronic devices, and chips for post-Moore's era.
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Affiliation(s)
- Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Di Bao
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Lin Yu-Chun
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jianing Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yingjie Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zeli Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Pingren Ham
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Andrew Hanna
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jiaming Pan
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xinyue Hu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Ji Zhou
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, 100084, Beijing, China.
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5
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Gao L, Yang B, Du J, Zhang C, Ma S, Guo Z, Wang Y, Wang J, Li X, Wu D, Lin P. A 1T'-MoTe 2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication. NANOSCALE 2024; 16:12228-12236. [PMID: 38847305 DOI: 10.1039/d4nr01366b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
Schottky-type self-powered UV photodetectors are promising for next-generation imaging systems. Nevertheless, conventional device fabrication using high-energy metal deposition brings unintentional interface defects, leading to deteriorated device performance and inhomogeneities. Emerging two-dimensional (2D) metallic materials offer an alternative pathway to overcoming such limitations because of their naturally passivated surfaces and the ease of combining with mature bulk semiconductors via van der Waals (vdW) integration. Here, we report the controllable preparation of MoTe2 in the pure 1T' phase and the fabrication of a high-performance 1T'-MoTe2/GaN vdW Schottky photodiode. With the reduced interface states and suppressed dark current as low as 20 pA at zero bias, the photodiode exhibits a remarkable UV-to-visible (R350/R400) rejection ratio of 1.6 × 104, a stable photoresponsivity of ∼50 mA W-1 and a detectivity of 3.5 × 1012 Jones under 360 nm illumination. The photocurrent ON/OFF ratio reaches ∼4.9 × 106 under 10.5 mW irradiation (360 nm). In particular, the 1T'-MoTe2/GaN Schottky diode shows excellent weak-light detection capability, which could detect a 3 nW 360 nm laser and the light emission from a lighter with a pronounced Ilight/Idark ratio of ∼2. Finally, the applications of the device in self-powered UV imaging and optical communication are demonstrated. These results reveal the great prospects of 2D/3D integration in multifunctional optoelectronics, which may inspire novel 2D-related devices and expand their applications in widespread fields.
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Affiliation(s)
- Lenan Gao
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Bangbang Yang
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Junli Du
- State Grid Henan Electric Power Research Institute, Zhengzhou 450052, China.
| | - Cheng Zhang
- National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China
| | - Shihong Ma
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Zhaowei Guo
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Yu Wang
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Jian Wang
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Xinjian Li
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Di Wu
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
| | - Pei Lin
- Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China.
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6
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Choi M, Oh S, Hahn S, Ji Y, Jo MK, Kim J, Ju TS, Kim G, Gyeon M, Lee Y, Do J, Choi S, Kim A, Yang S, Hwang C, Kim KJ, Cho D, Kim C, Kang K, Jeong HY, Song S. Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe 2 via Tellurization. ACS NANO 2024; 18:15154-15166. [PMID: 38808726 DOI: 10.1021/acsnano.4c02863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Platinum ditelluride (1T-PtTe2) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe2 using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods. We demonstrate that achieving highly crystalline 1T-PtTe2 using tellurization is not dependent on epitaxy but rather relies on two critical factors: (i) the crystallinity of the predeposited platinum (Pt) film and (ii) the surface coverage ratio of the Pt film considering lateral lattice expansion during transformation. By optimizing the surface coverage ratio of the epitaxial Pt film, we successfully obtained 2 in. wafer-scale uniformity without in-plane misalignment between antiparallelly oriented domains. The electronic band structure of 2D topological PtTe2 is clearly resolved in momentum space, and we observed an interesting 6-fold gapped Dirac cone at the Fermi surface. Furthermore, ultrahigh electrical conductivity down to ∼3.8 nm, which is consistent with that of single crystal PtTe2, was observed, proving its ultralow defect density.
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Affiliation(s)
- Minhyuk Choi
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
- Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Sungsoo Hahn
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Yubin Ji
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Min-Kyung Jo
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), Daejeon 34141, Republic of Korea
| | - Jeongtae Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Tae-Seong Ju
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Gyeongbo Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
- Graduate Program of Semiconductor Science and Engineering, Yonsei University (YU), Seoul 03722, Republic of Korea
| | - Minseung Gyeon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), Daejeon 34141, Republic of Korea
| | - Yuhwa Lee
- Department of High Temperature Materials, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea
| | - Jeonghyeon Do
- Department of High Temperature Materials, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea
| | - Seungwook Choi
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Ansoon Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Seungmo Yang
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Chanyong Hwang
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Kab-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Doohee Cho
- Graduate Program of Semiconductor Science and Engineering, Yonsei University (YU), Seoul 03722, Republic of Korea
- Department of Physics, Yonsei University (YU), Seoul 03722, Republic of Korea
| | - Changyoung Kim
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), Daejeon 34141, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Seungwoo Song
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
- Graduate Program of Semiconductor Science and Engineering, Yonsei University (YU), Seoul 03722, Republic of Korea
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7
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Wang Y, Du C, Li P, Yang Y, Xiao Y, Ge T, Jiang X, Liu Y, Gao H, Li K, Wang W. Photodetectors Based on ZrS 3/MoS 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:29049-29059. [PMID: 38770760 DOI: 10.1021/acsami.4c03833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
High-performance photodetectors with the detection capability of linearly polarized light have broad applications in both military and civilian fields. Quasi-one-dimensional ZrS3 as an emerging anisotropic two-dimensional material has come under the spotlight owing to its intriguing properties. However, the performance of the ZrS3 photodetector is seriously restricted by its low responsivity. Herein, a novel high-performance photodetector based on the van der Waals ZrS3/MoS2 heterostructure is proposed. Attributed to the charge trapping-assisted photogating effect, interlayer carrier transitions, and fast spatial separation of the photogenerated electron-hole pairs, the device displays superior photoresponse characteristics ranging from the ultraviolet to the visible spectrum in terms of high responsivity up to 212 A/W, an extraordinary external quantum efficiency of 8.5 × 104%, and a prompt rise/decay time of 0.19/0.38 ms. In addition, owing to the profound birefringence and dichroism effects in ZrS3 together with strong light-matter interactions in the heterostructure, profound linear-polarization sensitivity is demonstrated with a dichroic ratio of about 2.8. Overall, this photodetector not only is integrated with the excellent properties of ZrS3 and monolayer MoS2 but also further enhances the advantages through interlayer couplings, which demonstrate the strong potential of the ZrS3-based devices for high-performance, ultrafast, and polarization-sensitive photodetection.
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Affiliation(s)
- Yuge Wang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Changhui Du
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Peipei Li
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yufen Yang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yunfei Xiao
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Tiantian Ge
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Xiaowen Jiang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yiman Liu
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Honglei Gao
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Kuilong Li
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Wenjia Wang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
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8
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Meng K, Zhang X, Song B, Li BZ, Kong X, Huang S, Yang X, Jin X, Wu Y, Nie J, Cao GH, Li S. Layer-Dependent Superconductivity in Iron-Based Superconductors CsCa 2Fe 4As 4F 2 and CaKFe 4As 4. NANO LETTERS 2024; 24:6821-6827. [PMID: 38787786 DOI: 10.1021/acs.nanolett.4c01725] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2024]
Abstract
In the quasi-two-dimensional superconductor NbSe2, the superconducting transition temperature (Tc) is layer-dependent, decreasing by about 60% in the monolayer limit. However, for the extremely anisotropic copper-based high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi-2212), the Tc of the monolayer is almost identical with that of its bulk counterpart. To clarify the effect of dimensionality on superconductivity, here, we successfully fabricate ultrathin flakes of iron-based high-Tc superconductors CsCa2Fe4As4F2 and CaKFe4As4. It is found that the Tc of monolayer CsCa2Fe4As4F2 (after tuning to the optimal doping by ionic liquid gating) is about 20% lower than that of the bulk crystal, while the Tc of three-layer CaKFe4As4 decreases by 46%, showing a more pronounced dimensional effect than that of CsCa2Fe4As4F2. By carefully examining their anisotropy and the c-axis coherence length, we reveal the general trend and empirical law of the layer-dependent superconductivity in these quasi-two-dimensional superconductors.
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Affiliation(s)
- Ke Meng
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
| | - Xu Zhang
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Boqin Song
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Bai Zhuo Li
- School of Physics, Zhejiang University, Hangzhou 310058, China
| | - Xiangming Kong
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Sicheng Huang
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Xiaofan Yang
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Xiaobo Jin
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Yiyuan Wu
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Jiaying Nie
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Guang-Han Cao
- School of Physics, Zhejiang University, Hangzhou 310058, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Shiyan Li
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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9
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Yan L, Bu K, Li Z, Zhang Z, Xia W, Li M, Li N, Guan J, Liu X, Ning J, Zhang D, Guo Y, Wang X, Yang W. Double Superconducting Dome of Quasi Two-Dimensional TaS 2 in Non-Centrosymmetric van der Waals Heterostructure. NANO LETTERS 2024; 24:6002-6009. [PMID: 38739273 DOI: 10.1021/acs.nanolett.4c00579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Two-dimensional van der Waals heterostructures (2D-vdWHs) based on transition metal dichalcogenides (TMDs) provide unparalleled control over electronic properties. However, the interlayer coupling is challenged by the interfacial misalignment and defects, which hinders a comprehensive understanding of the intertwined electronic orders, especially superconductivity and charge density wave (CDW). Here, by using pressure to regulate the interlayer coupling of non-centrosymmetric 6R-TaS2 vdWHs, we observe an unprecedented phase diagram in TMDs. This phase diagram encompasses successive suppression of the original CDW states from alternating H-layer and T-layer configurations, the emergence and disappearance of a new CDW-like state, and a double superconducting dome induced by different interlayer coupling effects. These results not only illuminate the crucial role of interlayer coupling in shaping the complex phase diagram of TMD systems but also pave a new avenue for the creation of a novel family of bulk heterostructures with customized 2D properties.
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Affiliation(s)
- Limin Yan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, People's Republic of China
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Zhongyang Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Zihan Zhang
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Mingtao Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Nana Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Jiayi Guan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xuqiang Liu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Jiahao Ning
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Dongzhou Zhang
- GSECARS, University of Chicago, 9700 S. Cass Avenue, Argonne, Illinois 60439, United States
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Xin Wang
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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10
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Xu X, Chen Y, Liu P, Luo H, Li Z, Li D, Wang H, Song X, Wu J, Zhou X, Zhai T. General synthesis of ionic-electronic coupled two-dimensional materials. Nat Commun 2024; 15:4368. [PMID: 38778090 PMCID: PMC11111738 DOI: 10.1038/s41467-024-48690-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024] Open
Abstract
Two-dimensional (2D) AMX2 compounds are a family of mixed ionic and electronic conductors (where A is a monovalent metal ion, M is a trivalent metal, and X is a chalcogen) that offer a fascinating platform to explore intrinsic coupled ionic-electronic properties. However, the synthesis of 2D AMX2 compounds remains challenging due to their multielement characteristics and various by-products. Here, we report a separated-precursor-supply chemical vapor deposition strategy to manipulate the chemical reactions and evaporation of precursors, facilitating the successful fabrication of 20 types of 2D AMX2 flakes. Notably, a 10.4 nm-thick AgCrS2 flake shows superionic behavior at room temperature, with an ionic conductivity of 192.8 mS/cm. Room temperature ferroelectricity and reconfigurable positive/negative photovoltaic currents have been observed in CuScS2 flakes. This study not only provides an effective approach for the synthesis of multielement 2D materials with unique properties, but also lays the foundation for the exploration of 2D AMX2 compounds in electronic, optoelectronic, and neuromorphic devices.
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Affiliation(s)
- Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pengbin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hao Luo
- Nanostructure Research Center, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jinsong Wu
- Nanostructure Research Center, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
- Optics Valley Laboratory, Hubei, 430074, P. R. China.
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11
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Riera Aroche R, Ortiz García YM, Martínez Arellano MA, Riera Leal A. DNA as a perfect quantum computer based on the quantum physics principles. Sci Rep 2024; 14:11636. [PMID: 38773193 PMCID: PMC11109248 DOI: 10.1038/s41598-024-62539-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 05/17/2024] [Indexed: 05/23/2024] Open
Abstract
DNA is a complex multi-resolution molecule whose theoretical study is a challenge. Its intrinsic multiscale nature requires chemistry and quantum physics to understand the structure and quantum informatics to explain its operation as a perfect quantum computer. Here, we present theoretical results of DNA that allow a better description of its structure and the operation process in the transmission, coding, and decoding of genetic information. Aromaticity is explained by the oscillatory resonant quantum state of correlated electron and hole pairs due to the quantized molecular vibrational energy acting as an attractive force. The correlated pairs form a supercurrent in the nitrogenous bases in a single band π -molecular orbital ( π -MO). The MO wave function ( Φ ) is assumed to be the linear combination of the n constituent atomic orbitals. The central Hydrogen bond between Adenine (A) and Thymine (T) or Guanine (G) and Cytosine (C) functions like an ideal Josephson Junction. The approach of a Josephson Effect between two superconductors is correctly described, as well as the condensation of the nitrogenous bases to obtain the two entangled quantum states that form the qubit. Combining the quantum state of the composite system with the classical information, RNA polymerase teleports one of the four Bell states. DNA is a perfect quantum computer.
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Affiliation(s)
- R Riera Aroche
- Department of Research in Physics, University of Sonora, Hermosillo, Sonora, Mexico
- Research and Higher Education Center of UNEPROP, Hermosillo, Sonora, Mexico
| | - Y M Ortiz García
- Research Institute of Dentistry, University of Guadalajara, Guadalajara Jalisco, Mexico
- Research and Higher Education Center of UNEPROP, Hermosillo, Sonora, Mexico
| | - M A Martínez Arellano
- General Hospital of the State of Sonora, Boulevar José María Escrivá de Balaguer 157, Colonia Villa del Palmar, C.P. 83105, Hermosillo, Sonora, Mexico
- Research and Higher Education Center of UNEPROP, Hermosillo, Sonora, Mexico
| | - A Riera Leal
- General Hospital of the State of Sonora, Boulevar José María Escrivá de Balaguer 157, Colonia Villa del Palmar, C.P. 83105, Hermosillo, Sonora, Mexico.
- Research and Higher Education Center of UNEPROP, Hermosillo, Sonora, Mexico.
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12
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Su S, Zhao J, Ly TH. Scanning Probe Microscopies for Characterizations of 2D Materials. SMALL METHODS 2024:e2400211. [PMID: 38766949 DOI: 10.1002/smtd.202400211] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Revised: 04/12/2024] [Indexed: 05/22/2024]
Abstract
2D materials are intriguing due to their remarkably thin and flat structure. This unique configuration allows the majority of their constituent atoms to be accessible on the surface, facilitating easier electron tunneling while generating weak surface forces. To decipher the subtle signals inherent in these materials, the application of techniques that offer atomic resolution (horizontal) and sub-Angstrom (z-height vertical) sensitivity is crucial. Scanning probe microscopy (SPM) emerges as the quintessential tool in this regard, owing to its atomic-level spatial precision, ability to detect unitary charges, responsiveness to pico-newton-scale forces, and capability to discern pico-ampere currents. Furthermore, the versatility of SPM to operate under varying environmental conditions, such as different temperatures and in the presence of various gases or liquids, opens up the possibility of studying the stability and reactivity of 2D materials in situ. The characteristic flatness, surface accessibility, ultra-thinness, and weak signal strengths of 2D materials align perfectly with the capabilities of SPM technologies, enabling researchers to uncover the nuanced behaviors and properties of these advanced materials at the nanoscale and even the atomic scale.
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Affiliation(s)
- Shaoqiang Su
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
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13
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Altvater M, Muratore C, Snure M, Glavin NR. Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400463. [PMID: 38733217 DOI: 10.1002/smll.202400463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 04/11/2024] [Indexed: 05/13/2024]
Abstract
The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.
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Affiliation(s)
- Michael Altvater
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
- UES Inc., Dayton, OH, 45432, USA
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, 45469, OH, USA
| | - Michael Snure
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
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14
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Li J, Wu G, Huang Z, Han X, Wu B, Liu P, Hu H, Yu G, Hong X. Vertically Stacked Amorphous Ir/Ru/Ir Oxide Nanosheets for Boosted Acidic Water Splitting. JACS AU 2024; 4:1243-1249. [PMID: 38559737 PMCID: PMC10976594 DOI: 10.1021/jacsau.4c00085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 02/22/2024] [Accepted: 02/29/2024] [Indexed: 04/04/2024]
Abstract
Integrating multiple functional components into vertically stacked heterostructures offers a prospective approach to manipulating the physicochemical properties of materials. The synthesis of vertically stacked heterogeneous noble metal oxides remains a challenge. Herein, we report a surface segregation approach to create vertically stacked amorphous Ir/Ru/Ir oxide nanosheets (NSs). Cross-sectional high-angle annular darkfield scanning transmission electron microscopy images demonstrate a three-layer heterostructure in the amorphous Ir/Ru/Ir oxide NSs, with IrOx layers located on the upper and lower surfaces, and a layer of RuOx sandwiched between the two IrOx layers. The vertically stacked heterostructure is a result of the diffusion of Ir atoms from the amorphous IrRuOx solid solution to the surface. The obtained A-Ir/Ru/Ir oxide NSs display an ultralow overpotential of 191 mV at 10 mA cm-2 toward acid oxygen evolution reaction and demonstrate excellent performance in a proton exchange membrane water electrolyzer, which requires only 1.63 V to achieve 1 A cm-2 at 60 °C, with virtually no activity decay observed after a 1300 h test.
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Affiliation(s)
- Junmin Li
- Center
of Advanced Nanocatalysis (CAN), Department of Applied Chemistry,
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Geng Wu
- Center
of Advanced Nanocatalysis (CAN), Department of Applied Chemistry,
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zixiang Huang
- National
Synchrotron Radiation Laboratory, University
of Science and Technology of China, Hefei, Anhui 230029, China
| | - Xiao Han
- Center
of Advanced Nanocatalysis (CAN), Department of Applied Chemistry,
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Bei Wu
- Center
of Advanced Nanocatalysis (CAN), Department of Applied Chemistry,
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Peigen Liu
- National
Synchrotron Radiation Laboratory, University
of Science and Technology of China, Hefei, Anhui 230029, China
| | - Haohui Hu
- Center
of Advanced Nanocatalysis (CAN), Department of Applied Chemistry,
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ge Yu
- Center
of Advanced Nanocatalysis (CAN), Department of Applied Chemistry,
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xun Hong
- School
of Chemistry and Materials Science, University
of Science and Technology of China, Hefei 230026, China
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15
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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16
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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17
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Li L, Zhang Q, Li H, Geng D. Liquid metal catalyzed chemical vapor deposition towards morphology engineering of 2D epitaxial heterostructures. Chem Commun (Camb) 2023. [PMID: 37991755 DOI: 10.1039/d3cc04914k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
The past decades have witnessed significant advancements in the growth of two-dimensional (2D) materials, offering a wide range of potential applications in the fields of electronics, optoelectronics, energy storage, sensors, catalysis, and biomedical treatments. Epitaxial heterostructures based on 2D materials, including vertical heterostructures, lateral structures, and superlattices, have emerged as novel material systems to manipulate the intrinsic properties and unlock new functionalities. Therefore, the development of controllable preparation methods for tailored epitaxial heterostructures serves as a fundamental basis for extensive property investigation and further application exploration. However, this pursuit presents formidable challenges due to the incomplete understanding of growth mechanisms and limited designable strategies. Chemical vapor deposition (CVD) is deemed as a promising and versatile platform for the controlled synthesis of 2D materials, especially with regard to achieving lattice matching, a critical factor in epitaxial growth. Consequently, CVD holds potential to overcome these hurdles. In this Feature Article, we present our recent breakthroughs in the controllable preparation of 2D epitaxial heterostructures using CVD. Our focus revolves around the processes of morphology engineering, interface engineering, size and density engineering, and striking the delicate balance between growth and etching. Using molten metals or alloys as primary catalysts, we have achieved remarkable control over the fabrication of graphene/hexagonal boron nitride (hBN) super-ordered arrays, enabled multistage etching of graphene/hBN heterostructures, and successfully realized the construction of graphene/MXene heterostructures. Furthermore, our research endeavors encompass both bottom-up and top-down fabrication methods, offering a novel perspective on the synthesis of 2D epitaxial heterostructures. The resulting products hold immense potential for enhancing the efficiency of critical reactions such as oxygen reduction, CO2 reduction, and hydrogen evolution reactions. By presenting our methodologies for obtaining 2D epitaxial heterostructures through CVD, we aspire to inspire fellow researchers in this field to devise more feasible and controllable fabrication techniques while also fostering the exploration of diverse heterostructure configurations. Together, these advancements will undoubtedly pave the way for further breakthroughs in atomic manufacturing and novel applications.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
| | - Qing Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Hang Li
- CAS Key Laboratory of Separation Science for Analytical Chemistry, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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