1
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Huang H, Zha J, Xu S, Yang P, Xia Y, Wang H, Dong D, Zheng L, Yao Y, Zhang Y, Chen Y, Ho JC, Chan HP, Zhao C, Tan C. Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se xTe 1-x Nanosheets for p-Type Transistors and Inverters. ACS NANO 2024. [PMID: 38885180 DOI: 10.1021/acsnano.4c05323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.
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Affiliation(s)
- Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Songcen Xu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Huide Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Dechen Dong
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Chunsong Zhao
- Huawei Technologies Co., LTD., Shenzhen 518129, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
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2
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Guo Y, Li J, Zhan X, Wang C, Li M, Zhang B, Wang Z, Liu Y, Yang K, Wang H, Li W, Gu P, Luo Z, Liu Y, Liu P, Chen B, Watanabe K, Taniguchi T, Chen XQ, Qin C, Chen J, Sun D, Zhang J, Wang R, Liu J, Ye Y, Li X, Hou Y, Zhou W, Wang H, Han Z. Van der Waals polarity-engineered 3D integration of 2D complementary logic. Nature 2024; 630:346-352. [PMID: 38811731 PMCID: PMC11168927 DOI: 10.1038/s41586-024-07438-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 04/18/2024] [Indexed: 05/31/2024]
Abstract
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1-3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6-8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17) and MoS2 (refs. 11,18-28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.
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Affiliation(s)
- Yimeng Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Jiangxu Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Xuepeng Zhan
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Chunwen Wang
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Min Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Biao Zhang
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China
| | - Zirui Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Yueyang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing, Beijing, China
| | - Kaining Yang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Hai Wang
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Wanying Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Pingfan Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yingjia Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Peitao Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Bo Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Chengbing Qin
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, China
| | - Jiezhi Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Jing Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Runsheng Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
- Liaoning Academy of Materials, Shenyang, China
| | - Yu Ye
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
- Liaoning Academy of Materials, Shenyang, China
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Liaoning Academy of Materials, Shenyang, China.
| | - Yanglong Hou
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China.
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China.
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China.
| | - Hanwen Wang
- Liaoning Academy of Materials, Shenyang, China.
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
- Liaoning Academy of Materials, Shenyang, China.
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3
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Lu D, Chen Y, Lu Z, Ma L, Tao Q, Li Z, Kong L, Liu L, Yang X, Ding S, Liu X, Li Y, Wu R, Wang Y, Hu Y, Duan X, Liao L, Liu Y. Monolithic three-dimensional tier-by-tier integration via van der Waals lamination. Nature 2024; 630:340-345. [PMID: 38778106 DOI: 10.1038/s41586-024-07406-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 04/10/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) semiconductors have shown great potential for monolithic three-dimensional (M3D) integration due to their dangling-bonds-free surface and the ability to integrate to various substrates without the conventional constraint of lattice matching1-10. However, with atomically thin body thickness, 2D semiconductors are not compatible with various high-energy processes in microelectronics11-13, where the M3D integration of multiple 2D circuit tiers is challenging. Here we report an alternative low-temperature M3D integration approach by van der Waals (vdW) lamination of entire prefabricated circuit tiers, where the processing temperature is controlled to 120 °C. By further repeating the vdW lamination process tier by tier, an M3D integrated system is achieved with 10 circuit tiers in the vertical direction, overcoming previous thermal budget limitations. Detailed electrical characterization demonstrates the bottom 2D transistor is not impacted after repetitively laminating vdW circuit tiers on top. Furthermore, by vertically connecting devices within different tiers through vdW inter-tier vias, various logic and heterogeneous structures are realized with desired system functions. Our demonstration provides a low-temperature route towards fabricating M3D circuits with increased numbers of tiers.
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Affiliation(s)
- Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Shuimei Ding
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yunxin Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China.
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4
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Maßmeyer O, Günkel R, Glowatzki J, Klement P, Ojaghi Dogahe B, Kachel SR, Gruber F, Müller M, Fey M, Schörmann J, Belz J, Beyer A, Gottfried JM, Chatterjee S, Volz K. Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402155. [PMID: 38795001 DOI: 10.1002/smll.202402155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 04/18/2024] [Indexed: 05/27/2024]
Abstract
Two-dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials' properties toward device applications. Monolayer to multilayer gallium sulfide (GaS) with its ultraviolet band gap, which can be tuned by varying the layer number, holds promise for solar-blind photodiodes and light-emitting diodes as applications. However, achieving commercial viability requires wafer-scale integration, contrasting with established, limited methods such as mechanical exfoliation. Here the one-step synthesis of 2D GaS is introduced via metal-organic chemical vapor deposition on sapphire substrates. The pulsed-mode deposition of industry-standard precursors promotes 2D growth by inhibiting the vapor phase and on-surface pre-reactions. The interface chemistry with the growth of a Ga adlayer that results in an epitaxial relationship is revealed. Probing structure and composition validate thin-film quality and 2D nature with the possibility to control the thickness by the number of GaS pulses. The results highlight the adaptability of established growth facilities for producing atomically thin to multilayered 2D semiconductor materials, paving the way for practical applications.
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Affiliation(s)
- Oliver Maßmeyer
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Robin Günkel
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Johannes Glowatzki
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Philip Klement
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Badrosadat Ojaghi Dogahe
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Stefan Renato Kachel
- Material Sciences Center and Department of Chemistry, Philipps-Universität Marburg, Hans-Meerwein-Straße 4, 35043, Marburg, Germany
| | - Felix Gruber
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Marius Müller
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Melanie Fey
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Jörg Schörmann
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Jürgen Belz
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Andreas Beyer
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - J Michael Gottfried
- Material Sciences Center and Department of Chemistry, Philipps-Universität Marburg, Hans-Meerwein-Straße 4, 35043, Marburg, Germany
| | - Sangam Chatterjee
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Kerstin Volz
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
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5
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Bae J, Ryu H, Kim D, Lee CS, Seol M, Byun KE, Kim S, Lee S. Optimizing Ultrathin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314164. [PMID: 38608715 DOI: 10.1002/adma.202314164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 04/02/2024] [Indexed: 04/14/2024]
Abstract
The potential of monolithic 3D integration technology is largely dependent on the enhancement of interconnect characteristics which can lead to thinner stacks, better heat dissipation, and reduced signal delays. Carbon materials such as graphene, characterized by sp2 hybridized carbons, are promising candidates for future interconnects due to their exceptional electrical, thermal conductivity and resistance to electromigration. However, a significant challenge lies in achieving low contact resistance between extremely thin semiconductor channels and graphitic materials. To address this issue, an innovative wafer-scale synthesis approach is proposed that enables low contact resistance between dry-transferred 2D semiconductors and the as-grown nanocrystalline graphitic interconnects. A hybrid graphitic interconnect with metal doping reduces the sheet resistance by 84% compared to an equivalent thickness metal film. Furthermore, the introduction of a buried graphitic contact results in a contact resistance that is 17 times lower than that of bulk metal contacts (>40 nm). Transistors with this optimal structure are used to successfully demonstrate a simple logic function. The thickness of active layer is maintained within sub-7 nm range, encompassing both channels and contacts. The ultrathin transistor and interconnect stack developed here, characterized by a readily etchable interlayer and low parasitic resistance, leads to heterogeneous integration of future 3D integrated circuits (ICs).
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Affiliation(s)
- Junseong Bae
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Hyeyoon Ryu
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Dohee Kim
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Chang-Seok Lee
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Minsu Seol
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Kyung-Eun Byun
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Sangwon Kim
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Seunghyun Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
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6
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Wali A, Ravichandran H, Das S. A 2D Cryptographic Hash Function Incorporating Homomorphic Encryption for Secure Digital Signatures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400661. [PMID: 38373292 DOI: 10.1002/adma.202400661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Indexed: 02/21/2024]
Abstract
User authentication is a critical aspect of any information exchange system which verifies the identities of individuals seeking access to sensitive information. Conventionally, this approachrelies on establishing robust digital signature protocols which employ asymmetric encryption techniques involving a key pair consisting of a public key and its matching private key. In this article, a user verification platform constructed using integrated circuits (ICs) with atomically thin two-dimensional (2D) monolayer molybdenum disulfide (MoS2 ) memtransistors is presented. First, generation of secure cryptographic keys is demonstrated by exploiting the inherent stochasticity of carrier trapping and detrapping at the 2D/oxide interface trap sites. Subsequently, the ability to manipulate the functionality of logical NOR is leveraged to create a secure one-way hash function which when homomorphically operated upon with NAND, XOR, OR, NOT, and AND logic circuits generate distinct digital signatures. These signatures when subsequently decrypted, verify the authenticity of the receiver while ensuring complete preservation of data integrity and confidentiality as the underlying information is never revealed. Finally, the advantages of implementing a NOR-based hashing techniques in comparison to the conventional XOR-based encryption method are established. This demonstration highlights the potential of 2D-based ICs in developing critical hardware information security primitives.
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Affiliation(s)
- Akshay Wali
- Electrical Engineering and Computer Science, Penn State University, University Park, PA, 16802, USA
| | | | - Saptarshi Das
- Electrical Engineering and Computer Science, Penn State University, University Park, PA, 16802, USA
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- Materials Research Institute, Penn State University, University Park, PA, 16802, USA
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7
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Roy T. A 2D route to 3D computer chips. Nature 2024; 625:249-250. [PMID: 38200305 DOI: 10.1038/d41586-023-03992-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
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