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Zhang J, Dittrich T, Li Q, Ni C, Min Z, Zhang L, Qu J, Li M, Wang X, Li C, Fan F. Parallel Regulation of Charge Dynamics on Bipolar Ferroelectric Surfaces Breaks the Limits for Water Splitting Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2501875. [PMID: 40326177 DOI: 10.1002/adma.202501875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2025] [Revised: 04/15/2025] [Indexed: 05/07/2025]
Abstract
Ferroelectric materials, known for their non-inversion symmetry, show promise as photocatalysts due to their unique asymmetric charge separation, which separates hydrogen and oxygen evolution sites. However, the strong depolarized field induces a relaxed surface structure, which in turn directly leads to slow hole charge transfer dynamics, hindering their efficiency in water splitting. In this study, a fundamental breakthrough in dramatically enhancing the overall water-splitting activity is presented, through the synergistically regulating of the surface behaviors of photogenerated carriers, resulting in nearly perfect parallel dynamics and balanced amounts. By depositing atomic layers of TiO2 onto the surface of PbTiO3, surface vacancies are effectively passivated, significantly prolonging the hole lifetime from 10-6 to 10-3 s. Spatially resolved transient photovoltage spectroscopy showed that improved hole dynamics led to a 180° phase shift between photogenerated electrons and holes, indicating nearly identical extraction dynamics. Notably, hole and electron concentrations increased to equivalent levels. This leads to a nearly 578-fold increment in the apparent quantum yield, resulting in significantly increased overall water-splitting rates, with a quantum yield of 5.78% at 365 nm. The strategy is also effective with Al2O3 and SiO2, demonstrating its versatility across varied materials, providing a valuable method for creating high-performance ferroelectric photocatalysts.
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Affiliation(s)
- Jie Zhang
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Thomas Dittrich
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Schwarzschildstr. 8, 12489, Berlin, Germany
| | - Qian Li
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chenwei Ni
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhongrui Min
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lingcong Zhang
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
- School of Materials Science and Engineering and National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
| | - Jiangshan Qu
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Mingrun Li
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Xiuli Wang
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Can Li
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengtao Fan
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, The Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
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2
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Sun H, Chen P, Mao W, Guo C, Li Y, Wang J, Sun W, Xu D, Hao B, Zhang T, Ma J, Yang J, Cao Z, Yan S, Guan Y, Wen Z, Mao Z, Zheng N, Gu Z, Huang H, Wang P, Zhang Y, Wu D, Nie Y. Ferroelectric topologies in BaTiO 3 nanomembranes for light field manipulation. NATURE NANOTECHNOLOGY 2025:10.1038/s41565-025-01919-y. [PMID: 40269249 DOI: 10.1038/s41565-025-01919-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2024] [Accepted: 03/24/2025] [Indexed: 04/25/2025]
Abstract
Ferroelectric topological textures in oxides exhibit exotic dipole-moment configurations that would be ideal for nonlinear spatial light field manipulation. However, conventional ferroelectric polar topologies are spatially confined to the nanoscale, resulting in a substantial size mismatch with laser modes. Here we report a dome-shaped ferroelectric topology with micrometre-scale lateral dimensions using nanometre-thick freestanding BaTiO3 membranes and demonstrate its feasibility for spatial light field manipulation. The dome-shaped topology results from a radial flexoelectric field created through anisotropic lattice distortion, which, in turn, generates centre-convergent microdomains. The interaction between the continuous curling of dipoles and light promotes the conversion of circularly polarized waves into vortex light fields through nonlinear spin-to-orbit angular momentum conversion. Further dynamic manipulation of vortex light fields can also be achieved by thermal and electrical switching of the polar topology. Our work highlights the potential for other ferroelectric polar topologies in light field manipulation.
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Affiliation(s)
- Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Pengcheng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Wei Mao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Changqing Guo
- School of Materials Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Jierong Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Wenjie Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Duo Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Tingjun Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Jianan Ma
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Jiangfeng Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Zhequan Cao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Yuze Guan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Zonghan Wen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Zhangwen Mao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Ningchong Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Houbing Huang
- School of Materials Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Peng Wang
- Department of Physics, University of Warwick, Coventry, UK
- Electron Microscopy Research Technology Platform (EM-RTP), University of Warwick, Coventry, UK
| | - Yong Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China.
| | - Di Wu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, People's Republic of China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China.
- Jiangsu Physical Science Research Center, Nanjing, People's Republic of China.
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3
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Xu B, Ma N, Deng J, Liu JZ. Lateral heterophase electric polar topological superstructures of monolayer SnS: a first-principles computational study. NANOSCALE 2025. [PMID: 40261003 DOI: 10.1039/d5nr00145e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/24/2025]
Abstract
Ferroelectric topological structures in two-dimensional (2D) materials have emerged as a promising platform for exploring novel topological electronic properties and applications. To date, the reported topological structures have been limited to single-phase 2D materials with spatially varying polarization distributions. Many 2D materials exhibit multiple ferroelectric phases; however, topological structures that combine these phases remain largely unexplored. This is significant because the coexistence of multiple phases plays a fundamental role in the ferroelectric properties of three-dimensional ferroelectrics. In this study, lateral heterophase superstructures (LHPSs) consisting of the α and δ phases of SnS are investigated using first-principles computational methods. A similar threefold bonding of the α and δ phases facilitates the formation of atomically sharp and stable morphotropic phase boundaries (MPBs) in one-dimensional (1D) LHPSs. The 2D-LHPS with a topological ferroelectric flux-closure can be designed, where the two rectangular and polarized structures (the α and δ phases) are assembled into square superstructures, exhibiting distinctive nested flux-closure polarization patterns. This work extends the family of ferroelectric topological structures to encompass 2D ferroelectric materials, contributing to the advancement of miniaturized and highly integrated ferroelectric topological electronics.
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Affiliation(s)
- Bo Xu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
| | - Ning Ma
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Junkai Deng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
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4
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Cai Y, Xu YT, Fu MY, Feng M, Peng HY, Jiang YF, Wang BW, Wang YQ, Guan Z, Chen BB, Zhong N, Duan CG, Xiang PH. Superior Strain-Adapted Sacrificial Layer for the Synthesis of Freestanding Perovskite Oxide Films. ACS APPLIED MATERIALS & INTERFACES 2025; 17:21459-21468. [PMID: 40136252 DOI: 10.1021/acsami.5c01102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2025]
Abstract
Freestanding perovskite oxide films possess extra features of structural tunability and stacking ability when exfoliated from rigid substrates, providing potential applications in silicon-based semiconductors and flexible electronics. Well epitaxial growth on sacrificial layers is crucial to preserve fascinating physical properties in freestanding oxide membranes. However, the weak strain adaptability of sacrificial layers limits their coherent epitaxial growth on different substrates. Here, we demonstrate a simple perovskite sacrificial layer of SrMnO3 (SMO) with superior strain adaptability, capable of being epitaxially grown on an ultrabroad spectrum of substrates with lattice constants ranging from 3.715 Å to 3.946 Å. An atomically flat SMO has been employed to synthesize diverse crack-free freestanding single-crystal perovskite oxides on a millimeter scale. The SMO sacrificial layer exhibits a high dissolution rate of 3.1 mm2/min. LaAlO3 (LAO), SrTiO3 (STO), SrRuO3 (SRO), and BiFeO3 (BFO) are typical examples and are transferred intact to silicon wafers or flexible substrates. The intrinsic ferromagnetic and ferroelectric properties are well-maintained in freestanding SRO and BFO membranes, respectively. Freestanding STO and LAO membranes can serve as transferable heteroepitaxy surfaces for perovskite oxide films, which is demonstrated by the coherent epitaxial growth of the widely used ferromagnetic La0.7Sr0.3MnO3 films with a different strain state. Superior strain adaptability and ultrafast dissolution rate make SMO a prevailing sacrificial layer for synthesizing high-quality freestanding perovskite oxides with a wider range of lattice parameters.
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Affiliation(s)
- Yu Cai
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ya-Ting Xu
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Meng-Yao Fu
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Min Feng
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Huai-Yu Peng
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ya-Fei Jiang
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Bo-Wen Wang
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ya-Qiong Wang
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Zhao Guan
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi, China
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5
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Rong D, Chen X, Chen S, Zhang J, Xu Y, Shang YX, Hong H, Cui T, Wang Q, Ge C, Wang C, Zheng Q, Zhang Q, Wang L, Deng Y, Jin K, Liu GQ, Guo EJ. Deteriorated Interlayer Coupling in Twisted Bilayer Cobaltites. NANO LETTERS 2025; 25:5965-5973. [PMID: 40164569 DOI: 10.1021/acs.nanolett.5c01538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/02/2025]
Abstract
A wealth of remarkable behaviors is observed at the interfaces between magnetic oxides due to the coexistence of Coulomb repulsion and interatomic exchange interactions. While previous research has focused on bonded oxide heterointerfaces, studies on magnetism in van der Waals interfaces remain rare. In this study, we stacked two freestanding cobaltites with precisely controlled twist angles. Scanning transmission electron microscopy revealed clear and ordered moiré patterns, which exhibit an inverse relationship with the twist angle. We observed that the Curie temperature in the twisted region is lower than that in the single-layer region and varies systematically with the twist angle. This phenomenon may be related to the weakening of the orbital hybridization between oxygen ions and transition metal ions in the unbonded interfaces. Our findings suggest a potential avenue for modulating magnetic interactions in correlated systems through twist, providing opportunities for the discovery of unknown quantum states.
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Affiliation(s)
- Dongke Rong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiuqi Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physics, Zhejiang University, Hangzhou 310058, China
| | - Jinfeng Zhang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Yue Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yan-Xing Shang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Hong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ting Cui
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qianying Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Yu Deng
- National Laboratory of Solid-state Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing 210023, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Gang-Qin Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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6
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Mandal R, Yun S, Wurster K, Dollekamp E, Shondo JN, Pryds N. Recent Advancement in Ferroic Freestanding Oxide Nanomembranes. NANO LETTERS 2025; 25:5541-5549. [PMID: 40162740 DOI: 10.1021/acs.nanolett.5c00696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/02/2025]
Abstract
Ferroic and multiferroic oxides have been of significant interest for the last four decades due to their tremendous potential for next-generation memory and computational technologies. Possessing multiple ferroic orders with strong coupling between them erects a new way toward fast and low voltage switching. The major challenge is the scarcity of multiferroic materials at room temperature operation with a high coupling strength and robust ferroic orderings. Integration of existing multiferroics, mostly complex oxides, into the silicon-based platform also poses a major challenge. The recent development of freestanding oxide membranes offers a versatile solution for new and novel strategies to develop new materials. In this mini-review, we summarize the significant developments that happened in very recent years with ferroic oxide nanomembranes. We outline different approaches that have been implemented in the freestanding membranes to modulate the ferroic orderings, magnetism, ferroelectricity, and ferroelasticity. Along with the well-developed methods, such as bending and stretching of the membranes, we also emphasize the strength of twisting as a promising way to design and tune novel multiferroic orderings.
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Affiliation(s)
- Rajesh Mandal
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, 2800 Kgs. Lyngby, Denmark
| | - Shinhee Yun
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, 2800 Kgs. Lyngby, Denmark
| | - Katja Wurster
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, 2800 Kgs. Lyngby, Denmark
| | - Edwin Dollekamp
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, 2800 Kgs. Lyngby, Denmark
| | - Josiah N Shondo
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, 2800 Kgs. Lyngby, Denmark
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, 2800 Kgs. Lyngby, Denmark
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7
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Pan E, Li Z, Yang F, Niu K, Bian R, Liu Q, Chen J, Dong B, Wang R, Zhou T, Zhou A, Luo X, Chu J, Lin J, Li W, Liu F. Observation and manipulation of two-dimensional topological polar texture confined in moiré interface. Nat Commun 2025; 16:3026. [PMID: 40155598 PMCID: PMC11953397 DOI: 10.1038/s41467-025-58105-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2024] [Accepted: 03/12/2025] [Indexed: 04/01/2025] Open
Abstract
Topological polar structures in ferroelectric thin films have become an emerging research field for exotic phenomena. Due to the prerequisite of the intricate balance among the intrinsic dipolar anisotropy, the imposed electric and mechanical boundary, the topological polar domains are predominantly formed within complex oxides. Here, combining the microscopic polarization measurement via Piezoresponse Force Microscopy and the atomic displacement mapping via Scanning Transmission Electron Microscopy, we report the direct observation of atomically thin topological polar textures in twisted boron nitride system, which is well confined at the twisted interface. Leveraging the advantages of the sliding switching mechanism and atomically thin nature, we demonstrate nonvolatile manipulation of the topological polar textures, which is crucial for potential applications. This result provides opportunities to create truly 2D topological polar textures with dynamical controllability, which would render the exploration on the previously unknown physical phenomena and functional devices feasible.
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Affiliation(s)
- Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Fan Yang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Kangdi Niu
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen, China
| | - Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
| | - Jiangang Chen
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Biao Dong
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
- School of Physics, Nankai University, Tianjin, China
| | - Ruixue Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China
| | - Tingchuan Zhou
- Analysis and Testing Center, University of Electronic Science and Technology of China, Chengdu, China
| | - Aijun Zhou
- Analysis and Testing Center, University of Electronic Science and Technology of China, Chengdu, China
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, China
| | - Xiao Luo
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, China
| | - Junhao Lin
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen, China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China.
| | - Wenwu Li
- School of Physics and Electronic Science, East China Normal University, Shanghai, China.
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China.
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, China.
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China.
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8
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Hao Y, Li T, Hong X. Interface phenomena and emerging functionalities in ferroelectric oxide based heterostructures. Chem Commun (Camb) 2025; 61:4924-4950. [PMID: 40062386 DOI: 10.1039/d4cc05836d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2025]
Abstract
Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials. The topics covered include the basic synthesis methods for ferroelectric oxide thin films, membranes, and heterostructures, characterization of their properties, and various emergent phenomena hosted by the heterostructures, including the polarization-controlled metal-insulator transition and magnetic anisotropy, negative capacitance effect, domain-imposed one-dimensional graphene superlattices, programmable second harmonic generation, and interface-enhanced polar alignment and piezoelectric response, as well as their applications in nonvolatile memory, logic, and reconfigurable optical devices. Possible future research directions are also outlined, encompassing the synthesis via remote epitaxy and oxide moiré engineering, incorporation of binary ferroelectric oxides, realization of topological properties, and functional design of oxygen octahedral rotation.
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Affiliation(s)
- Yifei Hao
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
| | - Tianlin Li
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
| | - Xia Hong
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
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9
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Guo C, Tang S, Liang D, Wang J, Huang H. Continuously Tuning Negative Capacitance via Field-Driven Polar Skyrmions in Ferroelectric Trilayer Wrinkled Films. ACS NANO 2025; 19:8085-8092. [PMID: 39982172 DOI: 10.1021/acsnano.4c16350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2025]
Abstract
Polar topological structures have emerged as a frontier in research due to their significant potential in nanoscale electronic devices. The periodic and ordered arrangement, as well as the dynamic control mechanisms, are essential for their practical applications. Here, we present theoretical phase-field simulations that reveal the periodic and ordered arrangement of skyrmions and in-plane vortices within (SrTiO3)10/(PbTiO3)10/(SrTiO3)10 checkerboard-patterned wrinkled trilayer films. Each skyrmion wall exhibits a stable negative capacitance that significantly enhances the effective dielectric permittivity. The negative capacitance results from polarization reversal at the domain walls under small electric field perturbations, closely linked to the depolarization field. The direction of the external electric field can determine the location of the negative capacitance region, which is not strictly confined to the original domain walls but exhibits a shift. These topologically protected structures undergo reversible phase transitions from skyrmion and vortex states to a uniform ferroelectric state under the influence of electric fields and strain, accompanied by highly tunable permittivity. This interplay between topological structures and dielectric characteristics in flexible ferroelectric films offers the opportunity to simultaneously manipulate both topological and dielectric properties through external stimuli, thereby broadening the design possibilities for flexible electronic materials.
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Affiliation(s)
- Changqing Guo
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Shiyu Tang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Deshan Liang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Wang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Houbing Huang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
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10
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Zheng H, Pan D, Li Z. Energy storages on the ferroelectric microstructures with transformation and nano vortex pattern. Sci Rep 2025; 15:7446. [PMID: 40032857 DOI: 10.1038/s41598-024-81318-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2024] [Accepted: 11/26/2024] [Indexed: 03/05/2025] Open
Abstract
The energy storage and conversion in ferroelectrics can be realized through the microstructures of polar domains and domain walls, which resulting in the transformations from macro/microdomains to nanodomains or forming complex polar topologies. The physical basic models are adopted with domains and domain walls including 90o, 180o, 71o and 109o which are classified into two categories of 180o and α-angle, and are reconstructed with equivalent circuits simplified according to the reported patterns. Although electrical energy is known to be maintained by the charging capacitor, the energy storage effect on ferroelectric microstructure has been rarely explored for the relative paucity of experimental patterns reported with domains and domain walls. The diagrammatic sketches of transformation into nanodomain and vortex pattern are designed, and their respective formulas of total capacitances and energy densities are derived with crucial structural features. The findings reveal novel mechanisms of the relationship between energy storage and microstructures, that may be used to propose effective creation strategies or to design modern measure equipment in future.
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Affiliation(s)
- Han Zheng
- Physics Department, Shihezi University, Shihezi, 8320003, China
| | - Dongxu Pan
- Physics Department, Shihezi University, Shihezi, 8320003, China
| | - Zhengfa Li
- Physics Department, Shihezi University, Shihezi, 8320003, China.
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11
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Zeng X, Lin J, Dong G, Shen J, Tang L, Lin Q, Wang S, Gao M, Zhao C, Lin T, Luo L, Chen C, Sa B, Lin C, Wu X, Zhai J. Polymorphic relaxor phase and defect dipole polarization co-reinforced capacitor energy storage in temperature-monitorable high-entropy ferroelectrics. Nat Commun 2025; 16:1870. [PMID: 39984507 PMCID: PMC11845462 DOI: 10.1038/s41467-025-57139-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/26/2024] [Accepted: 02/13/2025] [Indexed: 02/23/2025] Open
Abstract
Energy storage high-entropy ceramics are famous for their ultrahigh power density and ultrafast discharge rate. However, achieving a synchronous combination of high energy density and efficiency along with intelligent temperature-monitorable function remains a significant challenge. Here, based on high-entropy strategy and phase field simulation, the polarization response of domains in Bi0.5Na0.5TiO3-based ceramics is optimized by constructing a concomitant nanostructure of defect dipole polarization and a polymorphic relaxor phase. The optimal ceramic possesses a high recyclable energy storage density (11.23 J cm-3) and a high energy storage efficiency (90.87%) at 670 kV cm-1. Furthermore, real-time temperature sensing is explored based on abnormal fluorescent negative thermal expansion, highlighting the application of intelligent cardiac defibrillation pulse capacitors. This study develops an effective strategy for enhancing the overall energy storage performance of ferroelectric ceramics to overcome the problems of insufficient energy supply and thermal runaway in traditional counterparts.
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Affiliation(s)
- Xiangfu Zeng
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Jinfeng Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Gaolei Dong
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Jie Shen
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Luomeng Tang
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Qifa Lin
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Simin Wang
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Min Gao
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Chunlin Zhao
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Tengfei Lin
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Laihui Luo
- Department of Microelectronic Science and Engineering, Ningbo University, Ningbo, 315211, China
| | - Chao Chen
- Jiangxi Key Laboratory of Advanced Ceramic Materials, School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen, 333403, China
| | - Baisheng Sa
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Cong Lin
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Xiao Wu
- Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China.
| | - Jiwei Zhai
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China.
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12
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Xu T, Qian T, Pang J, Zhang J, Li S, He R, Wang J, Shimada T. Creating Ferroelectricity and Ultrahigh-Density Polar Skyrmion in Paraelectric Perovskite Oxide Monolayers by Moiré Engineering. RESEARCH (WASHINGTON, D.C.) 2025; 8:0621. [PMID: 39963693 PMCID: PMC11830887 DOI: 10.34133/research.0621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/06/2024] [Revised: 01/21/2025] [Accepted: 01/29/2025] [Indexed: 02/20/2025]
Abstract
Atomic-scale polar topologies such as skyrmions offer important potential as technological paradigms for future electronic devices. Despite recent advances in the exploration of topological domains in complicated perovskite oxide superlattices, these exotic ferroic orders are unavoidably disrupted at the atomic scale due to intrinsic size effects. Here, based on first-principles calculations, we propose a new strategy to design robust ferroelectricity in atomically thin films by properly twisting 2 monolayers of centrosymmetric SrTiO3. Surprisingly, the emerged polarization vectors curl in the plane, forming a polar skyrmion lattice with each skyrmion as small as 1 nm, representing the highest polar skyrmion density to date. The emergent ferroelectricity originates from strong interlayer coupling effects and the resulting unique strain fields with obvious ion displacements, contributing to electric polarization comparable to that of PbTiO3. Moreover, we observe ultraflat bands (band width of less than 5 meV) at the valence band edge across a wide range of twist angles, which show widths that are smaller than those of common twisted bilayers of 2-dimensional materials. The present study not only overcomes the critical size limitation for ferroelectricity but also reveals a novel approach for achieving atomic-scale polar topologies, with important potential for applications in skyrmion-based ultrahigh-density memory technologies.
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Affiliation(s)
- Tao Xu
- Department of Mechanical Engineering and Science,
Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Tao Qian
- Ningbo Institute of Materials Technology and Engineering,
Chinese Academy of Sciences, Ningbo 315201, China
| | - Jiafei Pang
- Department of Mechanical Engineering and Science,
Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Jingtong Zhang
- Department of Engineering Mechanics, School of Aeronautics and Astronautics,
Zhejiang University, Hangzhou 310027, China
| | - Sheng Li
- Department of Civil and Earth Resources Engineering,
Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Ri He
- Ningbo Institute of Materials Technology and Engineering,
Chinese Academy of Sciences, Ningbo 315201, China
| | - Jie Wang
- Department of Engineering Mechanics, School of Aeronautics and Astronautics,
Zhejiang University, Hangzhou 310027, China
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science,
Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
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13
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Chen H, Zhang X, Ye Z, Chen X, Huang C, Zhan P, Ou X, Zhu S, Hu X. Continuous-wave second-harmonic generation of green light in periodically poled thin-film lithium tantalate. OPTICS LETTERS 2025; 50:1125-1127. [PMID: 39951743 DOI: 10.1364/ol.547762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2024] [Accepted: 01/09/2025] [Indexed: 02/16/2025]
Abstract
Thin-film lithium tantalate (TFLT) is attracting increasing attention in nonlinear generation of visible lasers due to its large second-order nonlinearity and reduced photorefractive effect. In this Letter, we design and fabricate a periodically poled TFLT waveguide for frequency doubling of a near-infrared laser operating at around 1064 nm. Continuous-wave 1.87-mW second-harmonic green light was obtained from the TFLT waveguide, and the nonlinear conversion efficiency is about 11.7%. The periodically poled TFLT waveguide exhibits a narrow wavelength acceptance bandwidth, a large nonlinear coefficient, and a stable output in the visible. The study present in this work will pave the way for the application of TFLT in nonlinear integrated photonics.
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14
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Lu Y, Shi H, Zhang S, Sun D, Huang L, Dou L, Yu Y. Imaging Electron Beam-Sensitive Twisted Hybrid Perovskite Bilayers at One-Angstrom Resolution. ACS NANO 2025; 19:4279-4288. [PMID: 39842041 DOI: 10.1021/acsnano.4c11759] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2025]
Abstract
Twisted halide perovskite bilayers, a type of moiré material, show square moiré patterns with exciting optical properties. Atomic-scale structure analysis and its correlation with properties are difficult to achieve due to the extreme sensitivity of organic-inorganic halide perovskites to the illuminated electron beam in conventional/scanning transmission electron microscopy. Here, we developed a low-dose exit wave reconstruction methodology with a real-space resolution of one angstrom at ∼50 e/Å2, which recovers the phase information on the moiré fringes in CH3NH3PbI3 (MAPbI3) twisted perovskite bilayers at atomic scale, enabling detailed structural analysis of defects and corresponding strain distribution in such moiré materials. This work provides an atomic-level understanding of electron beam-sensitive twisted bilayer materials.
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Affiliation(s)
- Yuan Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Shanghai Key Laboratory of High-Resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, China
| | - Hongsheng Shi
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Shanghai Key Laboratory of High-Resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, China
| | - Shuchen Zhang
- Key Laboratory of Precision and Intelligent Chemistry, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China
| | - Dewei Sun
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Letian Dou
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yi Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Shanghai Key Laboratory of High-Resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, China
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15
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Manousakis E. Lattice-mismatched and twisted multi-layered materials for efficient solar cells. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2025; 37:125702. [PMID: 39823748 DOI: 10.1088/1361-648x/adaba7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2024] [Accepted: 01/17/2025] [Indexed: 01/20/2025]
Abstract
We argue that alternating-layer structures of lattice mismatched or misaligned (twisted) atomically-thin layers should be expected to be more efficient absorbers of the broad-spectrum of solar radiation than the bulk material of each individual layer. In such mismatched layer-structures the conduction and valence bands of the bulk material, split into multiple minibands separated by minigaps confined to a small-size emerging Brillouin zone due to band-folding. We extended the Shockley-Queisser approach to calculate the photovoltaic efficiency for a band split into minibands of bandwidth ΔEand mini-gaps δGto model the case when such structures are used as solar cells. We find a significant efficiency enhancement due to impact ionization processes, especially in the limit of small but non-zero δG, and a dramatic increase when fully concentrated Sun-light is used.
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Affiliation(s)
- Efstratios Manousakis
- Department of Physics, Florida State University, Tallahassee, FL 32306-4350, United States of America
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16
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Gao Y, Deng F, He R, Zhong Z. Spontaneous curvature in two-dimensional van der Waals heterostructures. Nat Commun 2025; 16:717. [PMID: 39819969 PMCID: PMC11739405 DOI: 10.1038/s41467-025-56055-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2024] [Accepted: 01/06/2025] [Indexed: 01/19/2025] Open
Abstract
Two-dimensional (2D) van der Waals heterostructures consist of different 2D crystals with diverse properties, constituting the cornerstone of the new generation of 2D electronic devices. Yet interfaces in heterostructures inevitably break bulk symmetry and structural continuity, resulting in delicate atomic rearrangements and novel electronic structures. In this paper, we predict that 2D interfaces undergo "spontaneous curvature", which means when two flat 2D layers approach each other, they inevitably experience out-of-plane curvature. Based on deep-learning-assisted large-scale molecular dynamics simulations, we observe significant out-of-plane displacements up to 3.8 Å in graphene/BN bilayers induced by curvature, producing a stable hexagonal moiré pattern, which agrees well with experimentally observations. Additionally, the out-of-plane flexibility of 2D crystals enables the propagation of curvature throughout the system, thereby influencing the mechanical properties of the heterostructure. These findings offer fundamental insights into the atomic structure in 2D van der Waals heterostructures and pave the way for their applications in devices.
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Affiliation(s)
- Yuxiang Gao
- School of Artificial Intelligence and Data Science, University of Science and Technology of China, Hefei, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, China
| | - Fenglin Deng
- School of Artificial Intelligence and Data Science, University of Science and Technology of China, Hefei, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
| | - Zhicheng Zhong
- School of Artificial Intelligence and Data Science, University of Science and Technology of China, Hefei, China.
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, China.
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17
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Lin J, Wang H, Zheng Y, Kan Y, Chen R, Long M, Chen Y, Zhou Z, Qi R, Yue F, Duan CG, Chu J, Sun L. Enhanced Bulk Photovoltaic Effect of Single-Domain Freestanding BiFeO 3 Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2414113. [PMID: 39600071 DOI: 10.1002/adma.202414113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2024] [Revised: 11/04/2024] [Indexed: 11/29/2024]
Abstract
The bulk photovoltaic effect (BPVE), which uniquely exists in non-centrosymmetric materials, has been received extensive attention recently due to its potential to overcome the theoretical Shockley-Queisser limit in traditional p-n junction solar cells. Here, freestanding single-domain BiFeO3 membranes are exfoliated from miscut SrTiO3 substrates by dissolving Sr3Al2O6 sacrificial layers, and transferred on SiO2/Si substrates. This study finds that the freestanding BiFeO3 membranes maintain the single-domain structure and exhibits the significantly enhanced bulk photovoltaic response (≈200% enhancement), compared to the strained BiFeO3 films. The comprehensive atomic imaging analyses manifest that the freestanding BiFeO3 membrane demonstrates the bigger noncentral ion (Fe) displacement, which results in the larger in-plane ferroelectric polarization and substantial increase in the BPVE photocurrent. This work not only provides an effective approach to enhance the BPVE of ferroelectric oxide films, but also can potentially promote the exploration of BPVE of oxide membranes integrated with silicon-based or 2D electronics.
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Affiliation(s)
- Jianjun Lin
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Hongru Wang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Yufan Zheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Yucheng Kan
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Rui Chen
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Mingyue Long
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Ye Chen
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Zhiyong Zhou
- Shanghai Institute of Ceramics, Key Laboratory of Inorganic Functional Materials and Devices, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200438, China
| | - Lin Sun
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China
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18
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Checa M, Pant B, Puretzky A, Dryzhakov B, Vasudevan RK, Liu Y, Kavle P, Dasgupta A, Martin LW, Cao Y, Collins L, Jesse S, Domingo N, Kelley KP. On-demand nanoengineering of in-plane ferroelectric topologies. NATURE NANOTECHNOLOGY 2025; 20:43-50. [PMID: 39327514 PMCID: PMC11750715 DOI: 10.1038/s41565-024-01792-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Accepted: 08/19/2024] [Indexed: 09/28/2024]
Abstract
Hierarchical assemblies of ferroelectric nanodomains, so-called super-domains, can exhibit exotic morphologies that lead to distinct behaviours. Controlling these super-domains reliably is critical for realizing states with desired functional properties. Here we reveal the super-switching mechanism by using a biased atomic force microscopy tip, that is, the switching of the in-plane super-domains, of a model ferroelectric Pb0.6Sr0.4TiO3. We demonstrate that the writing process is dominated by a super-domain nucleation and stabilization process. A complex scanning-probe trajectory enables on-demand formation of intricate centre-divergent, centre-convergent and flux-closure polar structures. Correlative piezoresponse force microscopy and optical spectroscopy confirm the topological nature and tunability of the emergent structures. The precise and versatile nanolithography in a ferroic material and the stability of the generated structures, also validated by phase-field modelling, suggests potential for reliable multi-state nanodevice architectures and, thereby, an alternative route for the creation of tunable topological structures for applications in neuromorphic circuits.
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Affiliation(s)
- Marti Checa
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
| | - Bharat Pant
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX, USA
| | - Alexander Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Bogdan Dryzhakov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Yongtao Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Pravin Kavle
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Arvind Dasgupta
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Departments of Materials Science and NanoEngineering, Chemistry, and Physics and Astronomy and the Rice Advanced Materials Institute, Rice University, Houston, TX, USA
| | - Ye Cao
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX, USA
| | - Liam Collins
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Neus Domingo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
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19
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Sha H, Zhang Y, Ma Y, Li W, Yang W, Cui J, Li Q, Huang H, Yu R. Polar vortex hidden in twisted bilayers of paraelectric SrTiO 3. Nat Commun 2024; 15:10915. [PMID: 39738038 DOI: 10.1038/s41467-024-55328-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2024] [Accepted: 12/09/2024] [Indexed: 01/01/2025] Open
Abstract
Polar topologies, such as vortex and skyrmion, have attracted significant interest due to their unique physical properties and promising applications in high-density memory devices. To date, all known polar vortices are present in or induced by ferroelectric materials. In this study, we find polar vortex arrays in paraelectric SrTiO3. Using multislice electron ptychography, the evolution of vorticity along the vortex axis is revealed in twisted bilayers of SrTiO3 with deep-sub-angstrom resolution and one picometer accuracy. The surprising finding of polar vortices in a paraelectric crystal opens up opportunities for polarization physics and corresponding new devices.
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Affiliation(s)
- Haozhi Sha
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China
| | - Yixuan Zhang
- Advanced Research Institute of Multidisciplinary Science & School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Yunpeng Ma
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China
| | - Wei Li
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China
| | - Wenfeng Yang
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China
| | - Jizhe Cui
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China
| | - Qian Li
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China.
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science & School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China.
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, 100084, China.
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China.
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20
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Choo S, Varshney S, Liu H, Sharma S, James RD, Jalan B. From oxide epitaxy to freestanding membranes: Opportunities and challenges. SCIENCE ADVANCES 2024; 10:eadq8561. [PMID: 39661695 PMCID: PMC11633760 DOI: 10.1126/sciadv.adq8561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Accepted: 11/04/2024] [Indexed: 12/13/2024]
Abstract
Motivated by the growing demand to integrate functional oxides with dissimilar materials, numerous studies have been undertaken to detach a functional oxide film from its original substrate, effectively forming a membrane, which can then be affixed to the desired host material. This review article is centered on the synthesis of functional oxide membranes, encompassing various approaches to their synthesis, exfoliation, and transfer techniques. First, we explore the characteristics of thin-film growth techniques with emphasis on molecular beam epitaxy. We then examine the fundamental principles and pivotal factors underlying three key approaches of creating membranes: (i) chemical lift-off, (ii) the two-dimensional layer-assisted lift-off, and (iii) spalling. We review the methods of exfoliation and transfer for each approach. Last, we provide an outlook into the future of oxide membranes, highlighting their applications and emerging properties.
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Affiliation(s)
- Sooho Choo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
| | - Shivasheesh Varshney
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
| | - Huan Liu
- Department of Aerospace Engineering and Mechanics, University of Minnesota, Minneapolis, MN 55455, USA
| | - Shivam Sharma
- Department of Aerospace Engineering and Mechanics, University of Minnesota, Minneapolis, MN 55455, USA
| | - Richard D. James
- Department of Aerospace Engineering and Mechanics, University of Minnesota, Minneapolis, MN 55455, USA
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
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21
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Bennett D, Martínez-Carracedo G, He X, Ferrer J, Ghosez P, Comin R, Kaxiras E. Stacking-Engineered Ferroelectricity and Multiferroic Order in van der Waals Magnets. PHYSICAL REVIEW LETTERS 2024; 133:246703. [PMID: 39750367 DOI: 10.1103/physrevlett.133.246703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2024] [Accepted: 11/12/2024] [Indexed: 01/04/2025]
Abstract
Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization, or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However, multiferroic order is difficult to achieve, requiring complicated coupling between electron and spin degrees of freedom. We propose a universal method to engineer multiferroics from van der Waals magnets by taking advantage of the fact that changing the stacking between 2D layers can break inversion symmetry, resulting in ferroelectricity as well as magnetoelectric coupling. We illustrate this concept using first-principles calculations in bilayer NiI_{2}, which can be made ferroelectric upon rotating two adjacent layers by 180° with respect to the bulk stacking. Furthermore, we discover a novel strong magnetoelectric coupling between the interlayer spin order and interfacial electronic polarization. Our approach is not only general but also systematic and can enable the discovery of a wide variety of 2D multiferroics with strong magnetoelectric coupling.
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22
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Lee S, de Sousa DJP, Jalan B, Low T. Moiré polar vortex, flat bands, and Lieb lattice in twisted bilayer BaTiO 3. SCIENCE ADVANCES 2024; 10:eadq0293. [PMID: 39565843 PMCID: PMC11578177 DOI: 10.1126/sciadv.adq0293] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2024] [Accepted: 10/17/2024] [Indexed: 11/22/2024]
Abstract
Through first-principles calculations based on density functional theory, we investigate the crystal and electronic structures of twisted bilayer BaTiO3. Our findings reveal that large stacking fault energy leads to a chiral in-plane vortex pattern that was recently observed in experiments. We also found nonzero out-of-plane local dipole moments, indicating that the strong interlayer interaction might offer a promising strategy to stabilize ferroelectric order in the two-dimensional limit. The vortex pattern in the twisted BaTiO3 bilayer supports localized electronic states with quasi-flat bands, associated with the interlayer hybridization of oxygen pz orbitals. We found that the associated bandwidth reaches a minimum at ∼19∘ twisting, configuring the largest magic angle in moiré systems reported so far. Further, the moiré vortex pattern bears a notable resemblance to two interpenetrating Lieb lattices and the corresponding tight-binding model provides a comprehensive description of the evolution the moiré bands with twist angle and reveals the topological nature.
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Affiliation(s)
- Seungjun Lee
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
| | - D. J. P. de Sousa
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
- Department of Physics, University of Minnesota, Minneapolis, MN 55455, USA
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23
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Xu T, Qian T, Wu C, Zhang J, Wang J, Hirakata H, Kitamura T, Shimada T. Ultrahigh-Density Polar Vortex Lattice in Square-Shaped Moiré Bilayers of Lead Chalcogenides. NANO LETTERS 2024; 24:14736-14742. [PMID: 39527495 DOI: 10.1021/acs.nanolett.4c03999] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
Nanoscale exotic polar topological structures, such as vortices and skyrmions, hold promise for next-generation electronic devices, yet their spontaneous formation in 2D van der Waals (vdW) materials remains quite challenging. Herein, we demonstrate from first-principles that ultrahigh-density polar vortices emerge in the square moiré bilayer formed by twisting two layers of centrosymmetric PbS with the D4h point group. The emerged ferroelectricity arises from the inherent complex strain associated with the twisted structures, and the resulting electron polarization is much greater than that obtained in sliding ferroelectricity. Notably, the engineered strain patterns are characterized by peculiar inhomogeneous in-plane fields with a checkerboard distribution of uniaxial tension. This nanoscale nonuniform strain produces an ultrahigh-density vortex polarization lattice. The results from our study not only reveals a new mechanism for electric polarization and polar topologies in moiré bilayers but also provides opportunities for designing 2D ultrahigh-density electric devices.
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Affiliation(s)
- Tao Xu
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Tao Qian
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Chengsheng Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | | | - Jie Wang
- Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
- Zhejiang Laboratory, Hangzhou 311100, Zhejiang, China
| | - Hiroyuki Hirakata
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Takayuki Kitamura
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
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24
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Sun Y, Zhang Y, Ni J, Shen Y, Yu H, Lee HK, Hu J, Zhan X, Zhou C, Han J. Chiral Inorganic Polar BaTiO 3/BaCO 3 Nanohybrids with Spin Selection for Asymmetric Photocatalysis. NANO LETTERS 2024. [PMID: 39561320 DOI: 10.1021/acs.nanolett.4c04295] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/21/2024]
Abstract
Chirality-dependent photocatalysis is an emerging domain that leverages unique chiral light-matter interactions for enabling asymmetric catalysis driven by spin polarization induced by circularly polarized light selection. Herein, we synthesize chiral inorganic polar BaTiO3/BaCO3 nanohybrids for asymmetric photocatalysis via a hydrothermal method employing chiral glucose as a structural inducer. When excited by opposite circularly polarized light, the same material exhibits significant asymmetric catalysis, while enantiomers present an opposite polarization preference. More importantly, the preferred circularly polarized light undergoes reversal with reversal of the CD signal. Systematic experimental results demonstrate that more photogenerated carriers are generated in chiral semiconductors under suitable circularly polarized light irradiation, including more spin-polarized electrons, which inhibits the recombination of electron-hole pairs and promotes the activation of oxygen molecules into reactive oxygen species, thus inducing this asymmetric photocatalytic feature. This study provides valuable insights for the development of highly efficient polarization-sensitive chiral perovskite nanostructures as promising candidates for next-generation, multifunctional chiral device applications.
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Affiliation(s)
- Yemeng Sun
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
| | - Yan Zhang
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
- Engineering Research Center of Ministry of Education for Geological Carbon Storage and Low Carbon Utilization of Resources, Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Material Sciences and Technology, China University of Geosciences (Beijing), Beijing 100083, China
| | - Jingren Ni
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
| | - Yihui Shen
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
| | - Hongjian Yu
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
| | - Hiang Kwee Lee
- Division of Chemistry and Biological Chemistry, School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Jun Hu
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
| | - Xiuqin Zhan
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
| | - Chuanqiang Zhou
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
| | - Jie Han
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China
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25
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Segantini G, Hsu CY, Rischau CW, Blah P, Matthiesen M, Gariglio S, Triscone JM, Alexander DTL, Caviglia AD. Electron-Beam Writing of Atomic-Scale Reconstructions at Oxide Interfaces. NANO LETTERS 2024; 24:14191-14197. [PMID: 39486436 PMCID: PMC11565737 DOI: 10.1021/acs.nanolett.4c02913] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2024] [Revised: 09/06/2024] [Accepted: 09/06/2024] [Indexed: 11/04/2024]
Abstract
The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by nonepitaxial stacking of membranes, opening new possibilities for materials design. Here, we introduce a method for writing, with atomic precision, ionically bonded crystalline materials across the gap between an oxide membrane and a carrier substrate. The process involves a thermal pretreatment, followed by localized exposure to the raster scan of a scanning transmission electron microscopy (STEM) beam. STEM imaging and electron energy-loss spectroscopy show that we achieve atomically sharp interface reconstructions between a 30-nm-thick SrTiO3 membrane and a niobium-doped SrTiO3(001)-oriented carrier substrate. These findings indicate new strategies for fabricating synthetic heterostructures with novel structural and electronic properties.
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Affiliation(s)
- Greta Segantini
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Chih-Ying Hsu
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
- Electron
Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), Ecole Polytechnique Fédérale
de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Carl Willem Rischau
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Patrick Blah
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
| | - Mattias Matthiesen
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
| | - Stefano Gariglio
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Jean-Marc Triscone
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Duncan T. L. Alexander
- Electron
Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), Ecole Polytechnique Fédérale
de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Andrea D. Caviglia
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
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26
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Lee S, Zhang X, Abdollahi P, Barone MR, Dong C, Yoo YJ, Song MK, Lee D, Ryu JE, Choi JH, Lee JH, Robinson JA, Schlom DG, Kum HS, Chang CS, Seo A, Kim J. Route to Enhancing Remote Epitaxy of Perovskite Complex Oxide Thin Films. ACS NANO 2024; 18:31225-31233. [PMID: 39471046 DOI: 10.1021/acsnano.4c09445] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2024]
Abstract
Remote epitaxy is taking center stage in creating freestanding complex oxide thin films with high crystallinity that could serve as an ideal building block for stacking artificial heterostructures with distinctive functionalities. However, there exist technical challenges, particularly in the remote epitaxy of perovskite oxides associated with their harsh growth environments, making the graphene interlayer difficult to survive. Transferred graphene, typically used for creating a remote epitaxy template, poses limitations in ensuring the yield of perovskite films, especially when pulsed laser deposition (PLD) growth is carried out, since graphene degradation can be easily observed. Here, we employ spectroscopic ellipsometry to determine the critical factors that damage the integrity of graphene during PLD by tracking the change in optical properties of graphene in situ. To mitigate the issues observed in the PLD process, we propose an alternative growth strategy based on molecular beam epitaxy to produce single-crystalline perovskite membranes.
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Affiliation(s)
- Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Pooya Abdollahi
- Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Matthew R Barone
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Chengye Dong
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Young Jin Yoo
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Min-Kyu Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Doyoon Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jung-El Ryu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun-Hui Choi
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Hyun S Kum
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Celesta S Chang
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Ambrose Seo
- Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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27
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Han H, Li W, Zhang Q, Tang S, Wang Y, Xu Z, Liu Y, Chen H, Gu J, Wang J, Yi D, Gu L, Huang H, Nan CW, Li Q, Ma J. Electric Field-Manipulated Optical Chirality in Ferroelectric Vortex Domains. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2408400. [PMID: 39149784 DOI: 10.1002/adma.202408400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2024] [Revised: 07/26/2024] [Indexed: 08/17/2024]
Abstract
Manipulating optical chirality via electric fields has garnered considerable attention in the realm of both fundamental physics and practical applications. Chiral ferroelectrics, characterized by their inherent optical chirality and switchable spontaneous polarization, are emerging as a promising platform for electronic-photonic integrated circuits applications. Unlike organics with chiral carbon centers, integrating chirality into technologically mature inorganic ferroelectrics has posed a long-standing challenge. Here, the successful introduction of chirality is reported into self-assembly La-doped BiFeO3 nanoislands, which exhibit ferroelectric vortex domains. By employing synergistic experimental techniques with piezoresponse force microscopy and nonlinear optical second-harmonic generation probes, a clear correlation between chirality and polarization configuration within these ferroelectric nanoislands is established. Furthermore, the deterministic control of ferroelectric vortex domains and chirality is demonstrated by applying electric fields, enabling reversible and nonvolatile generation and elimination of optically chiral signals. These findings significantly expand the repertoire of field-controllable chiral systems and lay the groundwork for the development of innovative ferroelectric optoelectronic devices.
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Affiliation(s)
- Haojie Han
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Wei Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Shiyu Tang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Yue Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zongqi Xu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yiqun Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Hetian Chen
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jingkun Gu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Wang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Lin Gu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qian Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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28
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Bastogne L, Gómez-Ortiz F, Anand S, Ghosez P. Dynamical Manipulation of Polar Topologies from Acoustic Phonon Excitations. NANO LETTERS 2024; 24:13783-13789. [PMID: 39412191 DOI: 10.1021/acs.nanolett.4c04125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2024]
Abstract
Since the recent discovery of polar topologies, a recurrent question has been how to remotely tune them. Many efforts have focused on the pumping of polar optical phonons from optical methods, but with limited success, as only switching between specific phases has been achieved so far. Additionally, the correlation between optical pulse characteristics and the resulting phase is poorly understood. Here, we propose an alternative approach and demonstrate the deterministic and dynamical tailoring of polar topologies using acoustic phonon excitations. Our second-principles simulations reveal that by pumping specific longitudinal and transverse acoustic phonons, various topological textures can be induced in materials like BaTiO3 or PbTiO3. This method leverages the strong coupling between polarization and strain in these materials, enabling predictable and dynamic control of polar patterns. Our findings open up an alternative possibility for the manipulation of polar textures, suggesting a promising research direction.
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Affiliation(s)
- Louis Bastogne
- Theoretical Materials Physics, Q-MAT, Université de Liège, Allée du 6 août, 17, B-4000 Sart Tilman, Belgium
| | - Fernando Gómez-Ortiz
- Theoretical Materials Physics, Q-MAT, Université de Liège, Allée du 6 août, 17, B-4000 Sart Tilman, Belgium
| | - Sriram Anand
- Theoretical Materials Physics, Q-MAT, Université de Liège, Allée du 6 août, 17, B-4000 Sart Tilman, Belgium
| | - Philippe Ghosez
- Theoretical Materials Physics, Q-MAT, Université de Liège, Allée du 6 août, 17, B-4000 Sart Tilman, Belgium
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29
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Park DS, Pryds N. The fabrication of freestanding complex oxide membranes: Can we avoid using water? JOURNAL OF MATERIALS RESEARCH 2024; 39:2907-2917. [PMID: 39544439 PMCID: PMC11557645 DOI: 10.1557/s43578-024-01461-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2024] [Accepted: 09/30/2024] [Indexed: 11/17/2024]
Abstract
Recent advances in fabricating scalable two-dimensional or freestanding functional materials have shown promise for their use in modern silicon-based electronics and future technologies. A growing interest is in creating freestanding complex oxide membranes using new methods like epitaxial lift-off and mechanical exfoliation to enhance their quality and integrity. Despite these advances, it remains challenging to consistently produce high-quality freestanding oxide membranes on a large scale for practical use. This perspective paper provides an overview of release-and-transfer techniques for fabricating freestanding single-crystalline complex oxide layers, which are initially grown epitaxially. Specifically, we systematically explore the advantages and disadvantages of water-assisted exfoliation of freestanding oxide layers, which have been widely adopted using a water-soluble sacrificial layer in recent years. Furthermore, we compare this approach with other methods to navigate future directions in oxide layer transfer technology, considering material selections, fabrication processes, and functionalization strategies. Graphical abstract Seeking a water-free epitaxial lift-off process: (1) Growth: An epitaxial film is grown on a sacrificial layer placed on a single-crystal substrate (top left). (2) Release: The film is released from the substrate without using a water-based sacrificial layer (top right). (3) Transfer: The film is transferred onto a new platform (bottom right). (4) Support Removal: A polymer support is removed from the film (bottom left).
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Affiliation(s)
- Dae-Sung Park
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Building 310, 2800 Kgs. Lyngby, Denmark
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Building 310, 2800 Kgs. Lyngby, Denmark
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30
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Tsang CS, Zheng X, Yang T, Yan Z, Han W, Wong LW, Liu H, Gao S, Leung KH, Lee CS, Lau SP, Yang M, Zhao J, Ly TH. Polar and quasicrystal vortex observed in twisted-bilayer molybdenum disulfide. Science 2024; 386:198-205. [PMID: 39388544 DOI: 10.1126/science.adp7099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Accepted: 09/10/2024] [Indexed: 10/12/2024]
Abstract
We report the observation of an electric field in twisted-bilayer molybdenum disulfide (MoS2) and elucidate its correlation with local polar domains using four-dimensional scanning transmission electron microscopy (4D-STEM) and first-principles calculations. We reveal the emergence of in-plane topological vortices within the periodic moiré patterns for both commensurate structures at small twist angles and the incommensurate quasicrystal structure that occurs at a 30° twist. The large-angle twist leads to mosaic chiral vortex patterns with tunable characteristics. A twisted quasicrystal bilayer, characterized by its 12-fold rotational symmetry, hosts complex vortex patterns and can be manipulated by picometer-scale interlayer displacement. Our findings highlight that twisting 2D bilayers is a versatile strategy for tailoring local electric polar vortices.
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Affiliation(s)
- Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Tong Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
| | - Zhangyuan Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Haijun Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Shan Gao
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Ka Ho Leung
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- Research Centre on Data Sciences & Artificial Intelligence, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- Research Centre for Nanoscience and Nanotechnology, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
- The Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
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31
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Wang H, Harbola V, Wu YJ, van Aken PA, Mannhart J. Interface Design beyond Epitaxy: Oxide Heterostructures Comprising Symmetry-Forbidden Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405065. [PMID: 38838331 DOI: 10.1002/adma.202405065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 06/04/2024] [Indexed: 06/07/2024]
Abstract
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between 3D materials. However, these interfaces can only join material systems with crystal lattices of matching symmetries and lattice constants. This article presents a novel category of interfaces, the fabrication of which is membrane-based and does not require epitaxial growth. These interfaces therefore overcome the limitations imposed by epitaxy. Leveraging the additional degrees of freedom gained, atomically clean interfaces are demonstrated between threefold symmetric sapphire and fourfold symmetric SrTiO3. Atomic-resolution imaging reveals structurally well-defined interfaces with a novel moiré-type reconstruction.
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Affiliation(s)
- Hongguang Wang
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Varun Harbola
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Yu-Jung Wu
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Peter A van Aken
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Jochen Mannhart
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
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32
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Zhang C, Zhang S, Cui P, Zhang Z. Tunable Multistate Ferroelectricity of Unit-Cell-Thick BaTiO 3 Revived by a Ferroelectric SnS Monolayer via Interfacial Sliding. NANO LETTERS 2024; 24:8664-8670. [PMID: 38967611 DOI: 10.1021/acs.nanolett.4c02041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
Stabilization of multiple polarization states at the atomic scale is pivotal for realizing high-density memory devices beyond prevailing bistable ferroelectric architectures. Here, we show that two-dimensional ferroelectric SnS or GeSe is able to revive and stabilize the ferroelectric order of three-dimensional ferroelectric BaTiO3, even when the latter is thinned to one unit cell in thickness. The underlying mechanism for overcoming the conventional detrimental critical thickness effect is attributed to facile interfacial inversion symmetry breaking by robust in-plane polarization of SnS or GeSe. Furthermore, when invoking interlayer sliding, we can stabilize multiple polarization states and achieve efficient interstate switching in the heterostructures, accompanied by dynamical ferroelectric skyrmionic excitations. When invoking sliding and twisting, the moiré domains exhibit nontrivial polar vortexes, which can be laterally displaced via different sliding schemes. These findings provide an intuitive avenue for simultaneously overcoming the standing critical thickness issue in bulk ferroelectrics and weak polarization issue in sliding ferroelectricity.
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Affiliation(s)
- Chuanbao Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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Shi B, Liu Z, Li Y, Chen Q, Liu J, Yang K, Liang M, Yi X, Wang J, Li J, Kang J, Gao P, Liu Z. Atomic Evolution Mechanism and Suppression of Edge Threading Dislocations in Nitride Remote Heteroepitaxy. NANO LETTERS 2024. [PMID: 38860507 DOI: 10.1021/acs.nanolett.4c01724] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2024]
Abstract
The majority of dislocations in nitride epilayers are edge threading dislocations (TDs), which diminish the performance of nitride devices. However, it is extremely difficult to reduce the edge TDs due to the lack of available slip systems. Here, we systematically investigate the formation mechanism of edge TDs and find that besides originating at the coalescence boundaries, these dislocations are also closely related to geometrical misfit dislocations at the interface. Based on this understanding, we propose a novel strategy to reduce the edge TD density of the GaN epilayer by nearly 1 order of magnitude via graphene-assisted remote heteroepitaxy. The first-principles calculations confirm that the insertion of graphene dramatically reduces the energy barrier required for interfacial sliding, which promotes a new strain release channel. This work provides a unique approach to directly suppress the formation of edge TDs at the source, thereby facilitating the enhanced performance of photoelectronic and electronic devices.
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Affiliation(s)
- Bo Shi
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhetong Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yang Li
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qi Chen
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiaxin Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Kailai Yang
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meng Liang
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyan Yi
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junxi Wang
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinmin Li
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junjie Kang
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhiqiang Liu
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Jeong C, Lee J, Jo H, Oh J, Baik H, Go KJ, Son J, Choi SY, Prosandeev S, Bellaiche L, Yang Y. Revealing the three-dimensional arrangement of polar topology in nanoparticles. Nat Commun 2024; 15:3887. [PMID: 38719801 PMCID: PMC11078976 DOI: 10.1038/s41467-024-48082-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 04/16/2024] [Indexed: 05/12/2024] Open
Abstract
In the early 2000s, low dimensional ferroelectric systems were predicted to have topologically nontrivial polar structures, such as vortices or skyrmions, depending on mechanical or electrical boundary conditions. A few variants of these structures have been experimentally observed in thin film model systems, where they are engineered by balancing electrostatic charge and elastic distortion energies. However, the measurement and classification of topological textures for general ferroelectric nanostructures have remained elusive, as it requires mapping the local polarization at the atomic scale in three dimensions. Here we unveil topological polar structures in ferroelectric BaTiO3 nanoparticles via atomic electron tomography, which enables us to reconstruct the full three-dimensional arrangement of cation atoms at an individual atom level. Our three-dimensional polarization maps reveal clear topological orderings, along with evidence of size-dependent topological transitions from a single vortex structure to multiple vortices, consistent with theoretical predictions. The discovery of the predicted topological polar ordering in nanoscale ferroelectrics, independent of epitaxial strain, widens the research perspective and offers potential for practical applications utilizing contact-free switchable toroidal moments.
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Affiliation(s)
- Chaehwa Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Juhyeok Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
- Energy Geosciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Hyesung Jo
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jaewhan Oh
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hionsuck Baik
- Korea Basic Science Institute (KBSI), Seoul, 02841, Republic of Korea
| | - Kyoung-June Go
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Junwoo Son
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| | - Sergey Prosandeev
- Smart Ferroic Materials Center (SFMC), Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Laurent Bellaiche
- Smart Ferroic Materials Center (SFMC), Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Yongsoo Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
- Graduate School of Semiconductor Technology, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
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35
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Goodge BH. Layered ferroelectric materials make waves - and vortices. Nature 2024; 626:488-489. [PMID: 38356063 DOI: 10.1038/d41586-024-00231-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
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