Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses

Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either nonidentical or identical pulses, and with time delays between the pulses ranging from 1 μs to 10 s. Experimentally, a method for achieving nonlinear weight update with identical pulses at long programming delays is demonstrated by limiting the switching current via a series resistor. Simulations show that this concept can be expanded to achieve weight update in a 1T1C cell by limiting the switching current through a transistor operating in subthreshold or saturation mode. This leads to a maximum linearity in the weight update of 86% for a dynamic range (maximum switched polarization) of 30 μC/cm2. It is further demonstrated via simulation that engineering the device to achieve a narrower switching peak increases the linearity in scaled devices to >93% for the same range.

A Zero-Voltage-Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction

The artificial nervous system proves the great potential for the emulation of complex neural signal transduction. However, a more bionic system design for bio-signal transduction still lags behind that of physical signals, and relies on additional external sources. Here, this work presents a zero-voltage-writing artificial nervous system (ZANS) that integrates a bio-source-sensing device (BSSD) for ion-based sensing and power generation with a hafnium-zirconium oxide-ferroelectric tunnel junction (HZO-FTJ) for the continuously adjustable resistance state. The BSSD can use ion bio-source as both perception and energy source, and then output voltage signals varied with the change of ion concentrations to the HZO-FTJ, which completes the zero-voltage-writing neuromorphic bio-signal modulation. In view of in/ex vivo biocompatibility, this work shows the precise muscle control of a rabbit leg by integrating the ZANS with a flexible nerve stimulation electrode. The independence on external source enhances the application potential of ZANS in robotics and prosthetics.

Conformal Neuromorphic Bioelectronics for Sense Digitalization

Sense digitalization, the process of transforming sensory experiences into digital data, is an emerging research frontier that links the physical world with human perception and interaction. Inspired by the adaptability, fault tolerance, robustness, and energy efficiency of biological senses, this field drives the development of numerous innovative digitalization techniques. Neuromorphic bioelectronics, characterized by biomimetic adaptability, stand out for their seamless bidirectional interactions with biological entities through stimulus-response and feedback loops, incorporating bio-neuromorphic intelligence for information exchange. This review illustrates recent progress in sensory digitalization, encompassing not only the digital representation of physical sensations such as touch, light, and temperature, correlating to tactile, visual, and thermal perceptions, but also the detection of biochemical stimuli such as gases, ions, and neurotransmitters, mirroring olfactory, gustatory, and neural processes. It thoroughly examines the material design, device manufacturing, and system integration, offering detailed insights. However, the field faces significant challenges, including the development of new device/system paradigms, forging genuine connections with biological systems, ensuring compatibility with the semiconductor industry and overcoming the absence of standardization. Future ambition includes realization of biocompatible neural prosthetics, exoskeletons, soft humanoid robots, and cybernetic devices that integrate smoothly with both biological tissues and artificial components.

Developing fatigue-resistant ferroelectrics using interlayer sliding switching

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.

A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effects

A neuromorphic system is composed of hardware-based artificial neurons and synaptic devices, designed to improve the efficiency of neural computations inspired by energy-efficient and parallel operations of the biological nervous system. A synaptic device-based array can compute vector-matrix multiplication (VMM) with given input voltage signals, as a non-volatile memory device stores the weight information of the neural network in the form of conductance or capacitance. However, unlike software-based neural networks, the neuromorphic system unavoidably exhibits non-ideal characteristics that can have an adverse impact on overall system performance. In this study, the characteristics required for synaptic devices and their importance are discussed, depending on the targeted application. We categorize synaptic devices into two types: conductance-based and capacitance-based, and thoroughly explore the operations and characteristics of each device. The array structure according to the device structure and the VMM operation mechanism of each structure are analyzed, including recent advances in array-level implementation of synaptic devices. Furthermore, we reviewed studies to minimize the effect of hardware non-idealities, which degrades the performance of hardware neural networks. These studies introduce techniques in hardware and signal engineering, as well as software-hardware co-optimization, to address these non-idealities through compensation approaches.

Multifunctional HfAlO thin film: Ferroelectric tunnel junction and resistive random access memory

This study presents findings indicating that the ferroelectric tunnel junction (FTJ) or resistive random-access memory (RRAM) in one cell can be intentionally selected depending on the application. The HfAlO film annealed at 700 °C shows stable FTJ characteristics and can be converted into RRAM by forming a conductive filament inside the same cell, that is, the process of intentionally forming a conductive filament is the result of defect generation and redistribution, and applying compliance current prior to a hard breakdown event of the dielectric film enables subsequent RRAM operation. The converted RRAM demonstrated good memory performance. Through current-voltage fitting, it was confirmed that the two resistance states of the FTJ and RRAM had different transport mechanisms. In the RRAM, the 1/f noise power of the high-resistance state (HRS) was about ten times higher than that of the low-resistance state (LRS). This is because the noise components increase due to the additional current paths in the HRS. The 1/f noise power according to resistance states in the FTJ was exactly the opposite result from the case of the RRAM. This is because the noise component due to the Poole-Frenkel emission is added to the noise component due to the tunneling current in the LRS. In addition, we confirmed the potentiation and depression characteristics of the two devices and further evaluated the accuracy of pattern recognition through a simulation by considering a dataset from the Modified National Institute of Standards and Technology.

Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

HfO2-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widely investigated, their electromechanical response received much less attention so far. Here, we demonstrate that piezoelectricity in Hf0.5Zr0.5O2 ferroelectric capacitors is not an invariable property but, in fact, can be intrinsically changed by electrical field cycling. Hf0.5Zr0.5O2 capacitors subjected to ac cycling undergo a continuous transition from a positive effective piezoelectric coefficient d33 in the pristine state to a fully inverted negative d33 state, while, in parallel, the polarization monotonically increases. Not only can the sign of d33 be uniformly inverted in the whole capacitor volume, but also, with proper ac training, the net effective piezoresponse can be nullified while the polarization is kept fully switchable. Moreover, the local piezoresponse force microscopy signal also gradually goes through the zero value upon ac cycling. Density functional theory calculations suggest that the observed behavior is a result of a structural transformation from a weakly-developed polar orthorhombic phase towards a well-developed polar orthorhombic phase. The calculations also suggest the possible occurrence of a non-piezoelectric ferroelectric Hf0.5Zr0.5O2. Our experimental findings create an unprecedented potential for tuning the electromechanical functionality of ferroelectric HfO2-based devices.

Effect of growth temperature on self-rectifying BaTiO3/ZnO heterojunction for high-density crossbar arrays and neuromorphic computing

In the quest for high-density integration and massive scalability, ferroelectric-based devices provide an achievable approach for nonvolatile crossbar array (CBA) architecture and neuromorphic computing. In this report, ferroelectric-semiconductor (Pt/BaTiO3/ZnO/Au) heterojunction-based devices are demonstrated to exhibit nonvolatile and synaptic characteristics. In this study, the ferroelectric (BaTiO3) layer was modulated at various growth temperatures of 350 °C, 450 °C, 550 °C and 650 °C. Growing temperature in the ferroelectric layer has a significant impact on resistive switching. The ferroelectricity of the BaTiO3 thin film enhanced by increasing temperature causes a substantial shift in the interface state density at heterojunction interface, which is crucial for self-rectification. Furthermore, this self-rectifying property advances to reduce the crosstalk problem without any selector device. Enhanced resistive switching and neuromorphic applications have been demonstrated using BaTiO3 heterostructure devices at 550 °C. The dynamic ferroelectric polarization switching in this heterojunction demonstrated linear conductance change in artificial synapses with 91 % recognition accuracy. Ferroelectric polarization reversal with a depletion region at the heterojunction interface is the responsible mechanism for the switching in these devices. Thus, these findings pave the way for designing low power high-density crossbar arrays and neuromorphic application based on ferroelectric-semiconductor heterostructures.

Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal-oxide-semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors that are nearly free of polarization "wake-up"─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T-O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. These results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era

Growth of data eases the way to access the world but requires increasing amounts of energy to store and process. Neuromorphic electronics has emerged in the last decade, inspired by biological neurons and synapses, with in-memory computing ability, extenuating the 'von Neumann bottleneck' between the memory and processor and offering a promising solution to reduce the efforts both in data storage and processing, thanks to their multi-bit non-volatility, biology-emulated characteristics, and silicon compatibility. This work reviews the recent advances in emerging memristive devices for artificial neuron and synapse applications, including memory and data-processing ability: the physics and characteristics are discussed first, i.e., valence changing, electrochemical metallization, phase changing, interfaced-controlling, charge-trapping, ferroelectric tunnelling, and spin-transfer torquing. Next, we propose a universal benchmark for the artificial synapse and neuron devices on spiking energy consumption, standby power consumption, and spike timing. Based on the benchmark, we address the challenges, suggest the guidelines for intra-device and inter-device design, and provide an outlook for the neuromorphic applications of resistive switching-based artificial neuron and synapse devices.

Emerging Opportunities for 2D Materials in Neuromorphic Computing

Recently, two-dimensional (2D) materials and their heterostructures have been recognized as the foundation for future brain-like neuromorphic computing devices. Two-dimensional materials possess unique characteristics such as near-atomic thickness, dangling-bond-free surfaces, and excellent mechanical properties. These features, which traditional electronic materials cannot achieve, hold great promise for high-performance neuromorphic computing devices with the advantages of high energy efficiency and integration density. This article provides a comprehensive overview of various 2D materials, including graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), and black phosphorus (BP), for neuromorphic computing applications. The potential of these materials in neuromorphic computing is discussed from the perspectives of material properties, growth methods, and device operation principles.

Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications

The continuous advancement of Artificial Intelligence (AI) technology depends on the efficient processing of unstructured data, encompassing text, speech, and video. Traditional serial computing systems based on the von Neumann architecture, employed in information and communication technology development for decades, are not suitable for the concurrent processing of massive unstructured data tasks with relatively low-level operations. As a result, there arises a pressing need to develop novel parallel computing systems. Recently, there has been a burgeoning interest among developers in emulating the intricate operations of the human brain, which efficiently processes vast datasets with remarkable energy efficiency. This has led to the proposal of neuromorphic computing systems. Of these, Spiking Neural Networks (SNNs), designed to closely resemble the information processing mechanisms of biological neural networks, are subjects of intense research activity. Nevertheless, a comprehensive investigation into the relationship between spike shapes and Spike-Timing-Dependent Plasticity (STDP) to ensure efficient synaptic behavior remains insufficiently explored. In this study, we systematically explore various input spike types to optimize the resistive memory characteristics of Hafnium-based Ferroelectric Tunnel Junction (FTJ) devices. Among the various spike shapes investigated, the square-triangle (RT) spike exhibited good linearity and symmetry, and a wide range of weight values could be realized depending on the offset of the RT spike. These results indicate that the spike shape serves as a crucial indicator in the alteration of synaptic connections, representing the strength of the signals.

Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics

Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-structured oxides revived interest in the research on ferroelectric memories, by inducing nanoscale nonvolatility in state-of-the-art gate insulators by minute doping and thermal treatment. The potential of this approach has been demonstrated by the fabrication of sub-30 nm electronic devices. Nonetheless, to realize practical applications, various technical limitations, such as insufficient reliability including endurance, retention, and imprint, as well as large device-to-device-variation, require urgent solutions. Furthermore, such limitations should be considered based on targeting devices as well as applications. Various types of ferroelectric memories including ferroelectric random-access-memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction should be considered for classical nonvolatile memories as well as emerging neuromorphic computing and processing-in-memory. Therefore, from the viewpoint of materials science, this review covers the recent research focusing on ferroelectric memories from the history of conventional approaches to future prospects.

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT

A neuromuscular junction (NMJ) is a particularized synapse that activates muscle fibers for macro-motions, requiring more energy than computation. Emulating the NMJ is thus challenging owing to the need for both synaptic plasticity and high driving power to trigger motions. Here, we present an artificial NMJ using CuInP2S6 (CIPS) as a gate dielectric integrated with an AlGaN/GaN-based high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is coupled with the two-dimensional electron gas channel in the HEMT, providing a wide programmable current range of 6 picoampere per millimeter to 5 milliampere per millimeter. The large output current window of the CIPS/GaN ferroelectric HEMT (FeHEMT) allows for amplifier-less actuation, emulating the biological NMJ functions of actuation and synaptic plasticity. We also demonstrate the emulation of biological oculomotor dynamics, including in situ object tracking and enhanced stimulus responses, using the fabricated artificial NMJ. We believe that the CIPS/GaN FeHEMT offers a promising pathway for bioinspired robotics and neuromorphic vision.

Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing

In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which naturally comes at the cost of details in specific areas. Here, we address the specific area of multi-level resistive switching in hafnium-oxide-based devices for neuromorphic applications and summarize the progress of the most recent years. While the general approach of resistive switching based on hafnium oxide thin films has been very busy over the last decade or so, the development of hafnium oxide with a continuous range of programmable states per device is still at a very early stage and demonstrations are mostly at the level of individual devices with limited data provided. On the other hand, it is positive that there are a few demonstrations of full network implementations. We summarize the general status of the field, point out open questions, and provide recommendations for future work.

Emerging Memtransistors for Neuromorphic System Applications: A Review

The von Neumann architecture with separate memory and processing presents a serious challenge in terms of device integration, power consumption, and real-time information processing. Inspired by the human brain that has highly parallel computing and adaptive learning capabilities, memtransistors are proposed to be developed in order to meet the requirement of artificial intelligence, which can continuously sense the objects, store and process the complex signal, and demonstrate an "all-in-one" low power array. The channel materials of memtransistors include a range of materials, such as two-dimensional (2D) materials, graphene, black phosphorus (BP), carbon nanotubes (CNT), and indium gallium zinc oxide (IGZO). Ferroelectric materials such as P(VDF-TrFE), chalcogenide (PZT), HfxZr1-xO2(HZO), In2Se3, and the electrolyte ion are used as the gate dielectric to mediate artificial synapses. In this review, emergent technology using memtransistors with different materials, diverse device fabrications to improve the integrated storage, and the calculation performance are demonstrated. The different neuromorphic behaviors and the corresponding mechanisms in various materials including organic materials and semiconductor materials are analyzed. Finally, the current challenges and future perspectives for the development of memtransistors in neuromorphic system applications are presented.

Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications

Zirconium-doped hafnium oxide (HfZrO_x) is one of the promising ferroelectric materials for next-generation memory applications. To realize high-performance HfZrO_x for next-generation memory applications, the formation of defects in HfZrO_x, including oxygen vacancies and interstitials, needs to be optimized, as it can affect the polarization and endurance characteristics of HfZrO_x. In this study, we investigated the effects of ozone exposure time during the atomic layer deposition (ALD) process on the polarization and endurance characteristics of 16-nm-thick HfZrO_x. HfZrO_x films showed different polarization and endurance characteristics depending on the ozone exposure time. HfZrO_x deposited using the ozone exposure time of 1 s showed small polarization and large defect concentration. The increase of the ozone exposure time to 2.5 s could reduce the defect concentration and improve the polarization characteristics of HfZrO_x. When the ozone exposure time further increased to 4 s, a reduction of polarization was observed in HfZrO_x due to the formation of oxygen interstitials and non-ferroelectric monoclinic phases. HfZrO_x, with an ozone exposure time of 2.5 s, exhibited the most stable endurance characteristics because of the low initial defect concentration in HfZrO_x, which was confirmed by the leakage current analysis. This study shows that the ozone exposure time of ALD needs to be controlled to optimize the formation of defects in HfZrO_x films for the improvement of polarization and endurance characteristics.

Cycling Waveform Dependent Wake-Up and ON/OFF Ratio in Al2O3/Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction Devices

The wake-up behavior and ON/OFF current ratio of TiN-Al₂O₃-Hf_0.5Zr_0.5O₂-W ferroelectric tunnel junction (FTJ) devices were investigated for different wake-up voltage waveforms. We studied triangular and square waves, as well as square pulse trains of equal or unequal voltage amplitudes for positive and negative polarities. We find that the wake-up behavior in these FTJ stacks is highly influenced by the field cycling waveform. A square waveform is observed to provide wake-up with the lowest number of cycles, concomitantly resulting in higher remnant polarization and a higher ON/OFF ratio in the devices, compared to a triangular waveform. We further show that wake-up is dependent on the number of cycles rather than the total time of the applied electric field during cycling. We also demonstrate that different voltage magnitudes are necessary for positive and negative polarities during field cycling for efficient wake-up. Utilizing an optimized waveform with unequal magnitudes for the two polarities during field cycling, we achieve a reduction in wake-up cycles and a large enhancement of the ON/OFF ratio from ∼5 to ∼35 in our ferroelectric tunnel junctions.

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

The recent discovery of ferroelectricity in doped HfO₂ has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to junctions based on nonferroelectric oxides. The formation of the conductive channels does not preclude the presence of ferroelectric switching, but little is known about the device ferroelectric properties after conduction path formation or their impact on the electric modulation of the resistance state. Here, we show that ferroelectricity and related sizable electroresistance are observed in pristine 4.6 nm epitaxial Hf_0.5Zr_0.5O₂ (HZO) tunnel junctions grown on Si. After a soft breakdown induced by the application of suitable voltage, the resistance decreases by about five orders of magnitude, but signatures of ferroelectricity and electroresistance are still observed. Impedance spectroscopy allows us to conclude that the effective ferroelectric device area after the breakdown is reduced, most likely by the formation of conducting paths at the edge.

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

Hf_0.5Zr_0.5O₂(HZO) thin films are promising candidates for non-volatile memory and other related applications due to their demonstrated ferroelectricity at the nanoscale and compatibility with Si processing. However, one reason that HZO has not been fully scaled into industrial applications is due to its deleterious wake-up and fatigue behavior which leads to an inconsistent remanent polarization during cycling. In this study, we explore an interfacial engineering strategy in which we insert 1 nm Al₂O₃interlayers at either the top or bottom HZO/TiN interface of sequentially deposited metal-ferroelectric-metal capacitors. By inserting an interfacial layer while limiting exposure to the ambient environment, we successfully introduce a protective passivating layer of Al₂O₃that provides excess oxygen to mitigate vacancy formation at the interface. We report that TiN/HZO/TiN capacitors with a 1 nm Al₂O₃at the top interface demonstrate a higher remanent polarization (2P_r∼ 42μC cm^-2) and endurance limit beyond 10⁸cycles at a cycling field amplitude of 3.5 MV cm^-1. We use time-of-flight secondary ion mass spectrometry, energy dispersive spectroscopy, and grazing incidence x-ray diffraction to elucidate the origin of enhanced endurance and leakage properties in capacitors with an inserted 1 nm Al₂O₃layer. We demonstrate that the use of Al₂O₃as a passivating dielectric, coupled with sequential ALD fabrication, is an effective means of interfacial engineering and enhances the performance of ferroelectric HZO devices.

Dual-gate manipulation of a HfZrOx-based MoS2 field-effect transistor towards enhanced neural network applications

Artificial neural networks (ANNs) have strong learning and computing capabilities, and alleviate the problem of high power consumption of traditional von Neumann architectures, providing a solid basis for advanced image recognition, information processing, and low-power detection. Recently, a two-dimensional (2D) MoS₂ field-effect transistor (FET) integrating a Zr-doped HfO₂ (HZO) ferroelectric layer has shown potential for both logic and memory applications with low power consumption, which is promising for parallel processing of massive data. However, the long-term potentiation (LTP) characteristics of such devices are usually non-linear, which will affect the replacement of ANN weight values and degrade the ANN recognition rate. Here, we propose a dual-gate-controlled 2D MoS₂ FET employing HZO gate stack with a crested symmetric structure to reduce power consumption. Improved nonlinearity of the LTP properties has been achieved through the electrical control of the dual gates. A recognition rate reaching 100% is obtained after 60 training epochs, and is 7.89% higher than that obtained from single-gate devices. Our proposed device structure and experimental results provide an attractive pathway towards high-efficiency data processing and image classification in the advanced artificial intelligence field.

Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films

Hafnia-zirconia (HfO₂-ZrO₂) solid solution thin films have emerged as viable candidates for electronic applications due to their compatibility with Si technology and demonstrated ferroelectricity at the nanoscale. The oxygen source in atomic layer deposition (ALD) plays a crucial role in determining the impurity concentration and phase composition of HfO₂-ZrO₂ within metal-ferroelectric-metal devices, notably at the Hf_0.5Zr_0.5O₂ /TiN interface. The interface characteristics of HZO/TiN are fabricated via sequential no-atmosphere processing (SNAP) with either H₂O or O₂-plasma to study the influence of oxygen source on buried interfaces. Time-of-flight secondary ion mass spectrometry reveals that HZO films grown via O₂-plasma promote the development of an interfacial TiO_x layer at the bottom HZO/TiN interface. The presence of the TiO_x layer leads to the development of 111-fiber texture in HZO as confirmed by two-dimensional X-ray diffraction (2D-XRD). Structural and chemical differences between HZO films grown via H₂O or O₂-plasma were found to strongly affect electrical characteristics such as permittivity, leakage current density, endurance, and switching kinetics. While HZO films grown via H₂O yielded a higher remanent polarization value of 25 μC/cm², HZO films grown via O₂-plasma exhibited a comparable P_r of 21 μC/cm² polarization and enhanced field cycling endurance limit by almost 2 orders of magnitude. Our study illustrates how oxygen sources (O₂-plasma or H₂O) in ALD can be a viable way to engineer the interface and properties in HZO thin films.

Ferroelectricity induced double-direction conductance modulation in HfxZr1-xO2capacitors

The artificial synapses are basic units in the hardware implementation of neuromorphic computing, whose performances should be gradually modulated under external stimuli. The underlying mechanism of the increasing and decreasing device conductance is still unclear in the Hf_0.5Zr_0.5O₂based synapses. In this study, the Hf_0.5Zr_0.5O₂capacitors with different stack orders are fabricated in atomic layer deposition, whose ferroelectric properties are investigated by analyzing the capacitance-voltage and polarization-voltage curves. The enhanced ferroelectricity is found after the rapid thermal annealing treatment for all the TiN/Hf_0.5Zr_0.5O₂/TiN, TiN/HfO₂-ZrO₂/TiN and TiN/ZrO₂-HfO₂/TiN devices. In the device with poor ferroelectricity, the conductance gradually decreases under both positive and negative identical pulse schemes, which corresponds to the gradual dissolution process of the conductive filaments established in the initial pulse. For the capacitors with strong ferroelectricity, dual-direction conductance modulation can be observed due to the partial domain switching process, which can emulate the potentiation and depression process of biological synapses.

Frontier progress of the combination of modern medicine and traditional Chinese medicine in the treatment of hepatocellular carcinoma

Hepatocellular carcinoma (HCC, accounting for 90% of primary liver cancer) was the sixth most common cancer in the world and the third leading cause of cancer death in 2020. The number of new HCC patients in China accounted for nearly half of that in the world. HCC was of occult and complex onset, with poor prognosis. Clinically, at least 15% of patients with HCC had strong side effects of interventional therapy (IT) and have poor sensitivity to chemotherapy and targeted therapy. Traditional Chinese medicine (TCM), as a multi-target adjuvant therapy, had been shown to play an active anti-tumor role in many previous studies. This review systematically summarized the role of TCM combined with clinically commonly used drugs for the treatment of HCC (including mitomycin C, cyclophosphamide, doxorubicin, 5-fluorouracil, sorafenib, etc.) in the past basic research, and summarized the efficacy of TCM combined with surgery, IT and conventional therapy (CT) in clinical research. It was found that TCM, as an adjuvant treatment, played many roles in the treatment of HCC, including enhancing the tumor inhibition, reducing toxic and side effects, improving chemosensitivity and prolonging survival time of patients. This review summarized the advantages of integrated traditional Chinese and modern medicine in the treatment of HCC and provides a theoretical basis for clinical research.

Mimicking Neuroplasticity via Ion Migration in van der Waals Layered Copper Indium Thiophosphate

Artificial synaptic devices are the essential components of neuromorphic computing systems, which are capable of parallel information storage and processing with high area and energy efficiencies, showing high promise in future storage systems and in-memory computing. Analogous to the diffusion of neurotransmitter between neurons, ion-migration-based synaptic devices are becoming promising for mimicking synaptic plasticity, though the precise control of ion migration is still challenging. Due to the unique 2D nature and highly anisotropic ionic transport properties, van der Waals layered materials are attractive for synaptic device applications. Here, utilizing the high conductivity from Cu⁺ -ion migration, a two-terminal artificial synaptic device based on layered copper indium thiophosphate is studied. By controlling the migration of Cu⁺ ions with an electric field, the device mimics various neuroplasticity functions, such as short-term plasticity, long-term plasticity, and spike-time-dependent plasticity. The Pavlovian conditioning and activity-dependent synaptic plasticity involved neural functions are also successfully emulated. These results show a promising opportunity to modulate ion migration in 2D materials through field-driven ionic processes, making the demonstrated synaptic device an intriguing candidate for future low-power neuromorphic applications.

Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays

In the quest for highly scalable and three-dimensional (3D) stackable memory components, ferroelectric tunnel junction (FTJ) crossbar architectures are promising technologies for nonvolatile logic and neuromorphic computing. Most FTJs, however, require additional nonlinear devices to suppress sneak-path current, limiting large-scale arrays in practical applications. Moreover, the giant tunneling electroresistance (TER) remains challenging due to their inherent weak polarization. Here, we present that the employment of a diffusion barrier layer as well as a bottom metal electrode having a significantly low thermal expansion coefficient has been identified as an important way to enhance the strain, stabilize the ferroelectricity, and manage the leakage current in ultrathin hafnia film, achieving a high TER of 100, negligible resistance changes even up to 10⁸ cycles, and a high switching speed of a few tens of nanoseconds. Also, we demonstrate that the usage of an imprinting effect in a ferroelectric capacitor induced by an ionized oxygen vacancy near the electrode results in highly asymmetric current-voltage characteristics with a rectifying ratio of 1000. Notably, the proposed FTJ exhibits a high density array size (>4k) with a securing read margin of 10%. These findings provide a guideline for the design of high-performance and selector-free FTJ devices for large-scale crossbar arrays in neuromorphic applications.

Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfOx-based metal-ferroelectric-insulator-semiconductor stack

Ferroelectric tunnel junction (FTJ) has been considered as a promising candidate for next-generation memory devices due to its non-destructive and low power operations. In this article, we demonstrate the interlayer (IL) engineering in the FTJs to boost device performances. Through the analysis on the material and electrical characteristics of the fabricated FTJs with engineered IL stacks, it is clearly found that the insertion of an Al₂O₃layer between the SiO₂insulator and the pure-HfO_xFE improves the read disturbance (2V_c = 2.2 V increased), the endurance characteristics (tenfold improvement), and the cell-to-cell TER variation simultaneously without the degradation of the ferroelectricity (less than 5%) and the polarization switching speeds through grain size modulation. Based on these investigations, the guidelines of IL engineering for low power ferroelectric devices were provided to obtain stable and fast memory operations.

Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2based ferroelectric tunnel junctions

Ferroelectric random-access memory (FRAM) based on conventional ferroelectric materials is a non-volatile memory with fast read/write operations, high endurance, and 10 years of data retention time. However, it suffers from destructive read-out operation and lack of CMOS compatibility. HfO₂-based ferroelectric tunnel junctions (FTJ) may compensate for the shortcomings of FRAM by its CMOS compatibility, fast operation speed, and non-destructive readout operation. In this study, we investigate the effect of ferroelectric and interface film thickness on the tunneling electroresistance or ON/OFF current ratio of the Hf_0.5Zr_0.5O₂/Al₂O₃based FTJ device. Integrating a thick ferroelectric layer (i.e. 12 nm Hf_0.5Zr_0.5O₂) with a thin interface layer (i.e. 1 nm Al₂O₃) resulted in an ON/OFF current ratio of 78. Furthermore, to elucidate the relationship between ON/OFF current ratio and interfacial properties, the Hf_0.5Zr_0.5O₂-Al₂O₃films and Ge-Al₂O₃interfaces are examined via time-of-flight secondary ion mass spectrometry depth profiling mode. A bilayer oxide heterostructure (Hf_0.5Zr_0.5O₂/Al₂O₃) is deposited by atomic layer deposition (ALD) on the Ge substrate. The ON/OFF current ratio is enhanced by an order of magnitude when the Hf_0.5Zr_0.5O₂film deposition mode is changed from exposure (H₂O) ALD to sequential plasma (sequential O₂-H₂) ALD. Moreover, the interfacial engineering approach based on thein situALD H₂-plasma surface pre-treatment of Ge increases the ON/OFF current ratio from 9 to 38 by reducing the interfacial trap density state at the Ge-Al₂O₃interface and producing Al₂O₃with fewer oxygen vacancies as compared to the wet etch (HF + H₂O rinse) treatment of the Ge substrate. This study provides evidence of strong coupling between Hf_0.5Zr_0.5O₂and Al₂O₃films in controlling the ON/OFF current ratio of the FTJ.

3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3memristor crossbar array for quantized neuromorphic system

As interest in artificial intelligence (AI) and relevant hardware technologies has been developed rapidly, algorithms and network structures have become significantly complicated, causing serious power consumption issues because an enormous amount of computation is required. Neuromorphic computing, a hardware AI technology with memory devices, has emerged to solve this problem. For this application, multilevel operations of synaptic devices are important to imitate floating point weight values in software AI technologies. Furthermore, weight transfer methods to desired weight targets must be arranged for off-chip training. From this point of view, we fabricate 32 × 32 memristor crossbar array and verify the 3-bit multilevel operations. The programming accuracy is verified for 3-bit quantized levels by applying a reset-voltage-control programming scheme to the fabricated TiO_x/Al₂O₃-based memristor array. After that, a synapse composed of two differential memristors and a fully-connected neural network for modified national institute of standards and technology (MNIST) pattern recognition are constructed. The trained weights are post-training quantized in consideration of the 3-bit characteristics of the memristor. Finally, the effect of programming error on classification accuracy is verified based on the measured data, and we obtained 98.12% classification accuracy for MNIST data with the programming accuracy of 1.79% root-mean-square-error. These results imply that the proposed reset-voltage-control programming scheme can be utilized for a precise tuning, and expected to contribute for the development of a neuromorphic system capable of highly precise weight transfer.

Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure

Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depends on the specific application, so the process constraints required for device fabrication may be different. In this study, we investigate the ferroelectric characteristics of Zr doped HfO₂ layers treated at high temperatures. A single HfZrO_x layer deposited by sputtering exhibits polarization switching after annealing at a temperature of 850 °C. However, the achieved ferroelectric properties are vulnerable to voltage stress and higher annealing temperature, resulting in switching instability. Therefore, we introduce an ultrathin 1-nm-thick Al₂O₃ layer at both interfaces of the HfZrO_x. The trilayer Al₂O₃/HfZrO_x/Al₂O₃ structure allows switching parameters such as remnant and saturation polarizations to be immune to sweeping voltage and pulse cycling. Our results reveal that the trilayer not only makes the ferroelectric phase involved in the switching free from pinning, but also preserves the phase even at high annealing temperature. Simultaneously, the ferroelectric switching can be improved by preventing leakage charge.

Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions

Ferroelectric random-access memories based on conventional perovskite materials are non-volatile but suffer from lack of CMOS compatibility, scalability limitation, and a destructive reading scheme. On the other hand, ferroelectric tunnel junctions based on CMOS compatible hafnium oxide are a promising candidate for future non-volatile memory technology due to their simple structure, scalability, low power consumption, high operation speed, and non-destructive read-out operation. Herein, we report an efficient strategy based on the interface-engineering approach to improve upon the tunneling electroresistance effect and data retention by depositing bilayer oxide heterostructure (Al₂O₃/Hf_0.5Zr_0.5O₂) using atomic layer deposition (ALD) on Ge substrate which is treated in-situ ALD chamber with H₂-plasma before film deposition. Integrating a thin ferroelectric layer i.e. Hf_0.5Zr_0.5O₂ (8.4 nm) with a thin interface layer i.e. Al₂O₃ (1 nm) allowed us to reduce the operation (read and write) voltage to 1.4 V, and 4.3 V, respectively, while maintaining a good tunneling electroresistance or ON/OFF ratio above 10. Furthermore, an extrapolation to 1000 years at room temperature gives a residual ON/OFF ratio of 4.

Optimizing the Piezoelectric Strain in ZrO2- and HfO2-Based Incipient Ferroelectrics for Thin-Film Applications: An Ab Initio Dopant Screening Study

HfO₂ and ZrO₂ have increasingly drawn the interest of researchers as lead-free and silicon technology-compatible materials for ferroelectric, pyroelectric, and piezoelectric applications in thin films such as ferroelectric field-effect transistors, ferroelectric random access memories, nanoscale sensors, and energy harvesters. Owing to the environmental regulations against lead-containing electronic components, HfO₂ and ZrO₂ offer, along with AlN, (K,Na)NbO₃- and (Bi_0.5Na_0.5)TiO₃-based materials, an alternative to Pb(Zr_xTi_1-x)O₃-based materials, which are the overwhelmingly used ceramics in industry. HfO₂ and ZrO₂ thin films may show field-induced phase transformation from the paraelectric tetragonal to the ferroelectric orthorhombic phase, leading to a change in crystal volume and thus strain. These field-induced strains have already been measured experimentally in pure and doped systems; however, no systematic optimization of the piezoelectric activity was performed, either experimentally or theoretically. In this screening study, we calculate the ultimate size of this effect for 58 dopants depending on the oxygen supply and the defect incorporation type: substitutional or interstitial. The largest piezoelectric strain values are achieved with Yb, Li, and Na in ZrO₂ and exceed 40 pm V^-1 or 0.8% maximal strain, which exceeds the best experimental findings by a factor of 2. Furthermore, we discovered that Mo, W, and Hg make the polar-orthorhombic phase in the ZrO₂ bulk stable under certain circumstances, which would count in favor of these systems for the ceramic crystallization process. Our work guides the development of the performance of a promising material system by rational design of the essential mechanisms so as to apply it to unforeseen applications.