Dirac half-metallicity of Thin PdCl3 Nanosheets: Investigation of the Effects of External Fields, Surface Adsorption and Defect Engineering on the Electronic and Magnetic Properties

External fields effectively switch the spin channels of transition metal-doped β-phase tellurene from first principles

Non-volatile magnetic random-access memories have proposed the need for spin channel switching. However, this presents a challenge as each spin channel reacts differently to the external field. Tellurene is a semiconductor with a tunable bandgap, excellent stability, and high carrier concentration, but its lack of magnetic properties has hindered its application in spintronics. In this work, the influence of an external field on transition metal (TM)-doped β-tellurene is systematically analysed from first principles. First, the active-learning moment-tensor-potential (MTP) is used to verify the thermal stability of the V-doped system with the MTP proving to be 900 times faster than the traditional method. Subsequently, under biaxial strain ranging from -2% to 10%, the V-doped system undergoes a gradual transition from a magnetic semiconductor to a spin-gapless semiconductor, and further to a half-metal and magnetic metal. The band structure can be maintained under an electric field. By examining the magnetic anisotropy energy, the lattice changes profoundly impact the electromagnetic properties, particularly with the TMs being sensitive to strain. Moreover, the band structure is reflected in the spin resolution current of the magnetic tunnel junction. This work investigates the response of doped β-Te to external fields, revealing its potential applications in spintronics.

Surface modification of XSe (X = Cu and Ag) monolayers by grope 1 elements: A metal to semiconductor transition by a first-principles perspective

Two-dimensional (2D) materials can be effectively functionalized by chemically modified using doping. Very recently, a flat AgSe monolayer was successfully prepared through direct selenization of the Ag(111) surface. Besides, the results indicate that the AgSe monolayer like CuSe, has a honeycomb lattice. Motivated by the experimental outcomes, in this work, employing first-principles calculations, we systematically investigate the electronic and optical properties of AgSe and CuSe monolayers, as well as the impact of alkali metals (Li, Na and K). Without functionalization, both the CuSe and AgSe monolayers exhibit metallic characteristics. The Li (Na)-CuSe and Na (K)-AgSe systems are dynamically stable while, the K- and Li-CuSe and Li-AgSe are dynamically unstable. Interestingly, the functionalized CuSe system with Li and Na atom as well as AgSe with K and Na atom, can open the band gaps, leading to the actualization of metal to semiconductor transitions. Our results show that, the electronic characteristics of the Na-CuSe/AgSe system can be modulated by adjusting the adsorption heights, which gives rise to the change in the electronic properties and the band gap may be controlled. Furthermore, from the optical properties we can find that the K-AgSe system is the best candidate monolayer to absorb infrared radiation and visible light. Consequently, our findings shed light on the functionalization of 2D materials based CuSe and AgSe monolayers and can potentially enhance and motivate studies in producing these monolayers for current nanodevices and future applications.

Orbital distortion and electric field control of sliding ferroelectricity in a boron nitride bilayer

Recent experiments confirm that two-dimensional boron nitride (BN) films possess room-temperature out-of-plane ferroelectricity when each BN layer is sliding with respect to each other. This ferroelectricity is attributed to the interlayered orbital hybridization or interlayer charge transfer in previous work. In this work, we attempt to understand the sliding ferroelectricity from the perspective of orbital distortion of long-pair electrons. Using the maximally localized Wannier function method and first-principles calculations, the out-of-planep_zorbitals of BN are investigated. Our results indicate that the interlayer van der Waals interaction causes the distortion of the Np_zorbitals. Based on the picture of out-of-plane orbital distortion, we propose a possible mechanism to tune the ferroelectric polarization by external fields, including electric field and stress field. It is found that both the polarization intensity and direction can be modulated under the electric field. The polarization intensity of the system can also be controlled by stress field perpendicular to the plane. This study will provide theoretical help in the device design based on sliding ferroelectrics.

Parts-Per-Million of Soluble Pd0 Catalyze the Semi-Hydrogenation Reaction of Alkynes to Alkenes

The synthesis of cis-alkenes is industrially carried out by selective semi-hydrogenation of alkynes with complex Pd catalysts, which include the Lindlar catalyst (PdPb on CaCO₃) and c-Pd/TiS (colloidal ligand-protected Pd nanoparticles), among others. Here, we show that Pd⁰ atoms are generated from primary Pd salts (PdCl₂, PdSO₄, Pd(OH)₂, PdO) with H₂ in alcohol solutions, independently of the alkyne, to catalyze the semi-hydrogenation reaction with extraordinarily high efficiency (up to 735 s^-1), yield (up to 99%), and selectivity (up to 99%). The easy-to-prepare Pd⁰ species hold other potential catalytic applications.

Tunable Dirac states in doped B2S3 monolayers

Two-dimensional (2D) Dirac materials have been a research hotspot due to their intriguing properties, such as high carrier mobility and ballistic charge transport. Here, we demonstrate that the B₂S₃ monolayer with a hexagonal structure, which has been reported as a photocatalyst, can be tuned to new 2D Dirac materials by doping atoms. The Young's modulus can reach 65.23 N m^-1, indicating that the monolayer can be used as a buffer materials. The electronic structures of the pristine B₂S₃ monolayer show that some Dirac points appear but do not occur exactly on the Fermi level (E_F). Fortunately, we find that the Dirac cone can be tuned to the E_F by doping C, N, or Sn atoms. The C-doped B₂S₃ monolayer can be a half-metallic Dirac material, which has significant potential application in spintronics. For N- and Sn-doped B₂S₃ monolayers, the typical kagome bands are formed near the E_F, which arise from three molecular orbitals hybridized by B, S, and N (Sn) atoms. These outstanding properties render the doped B₂S₃ monolayers promising 2D Dirac materials for future nanoelectronic devices.

First principles study of optoelectronic and photocatalytic performance of novel transition metal dipnictide XP2 (X = Ti, Zr, Hf) monolayers

Low cost and highly efficient two dimensional materials as photocatalysts are gaining much attention to utilize solar energy for water splitting and produce hydrogen fuel as an alternative to deal with the energy crisis and reduce environmental hazards. First principles calculations are performed to investigate the electronic, optical and photocatalytic properties of novel two dimensional transition metal dipnictide XP2 (X = Ti, Zr, Hf) monolayers. The studied single layer XP2 is found to be dynamically and thermally stable. TiP2, ZrP2 and HfP2 systems exhibit semiconducting nature with moderate indirect band gap values of 1.72 eV, 1.43 eV and 2.02 eV, respectively. The solar light absorption is found to be in energy range of 1.65-3.3 eV. All three XP2 systems (at pH = 7) and the HfP2 monolayer (at pH = 0) that straddle the redox potentials, are promising candidates for the water splitting reaction. These findings enrich the two dimensional family and provide a platform to design novel devices for emerging optoelectronic and photovoltaic applications.

Two-dimensional Dirac half-metal in porous carbon nitride C6N7monolayer via atomic doping

Motivated by the recent experimental discovery of C₆N₇monolayer (Zhaoet al2021Science Bulletin66, 1764), we show that C₆N₇monolayer co-doped with C atom is a Dirac half-metal by employing first-principle density functional theory calculations. The structural, mechanical, electronic and magnetic properties of the co-doped C₆N₇are investigated by both the PBE and HSE06 functionals. Pristine C₆N₇monolayer is a semiconductor with almost isotropic electronic dispersion around the Γ point. As the doping of the C₆N₇takes place, the substitution of an N atom with a C atom transforms the monolayer into a dilute magnetic semiconductor, with the spin-up channel showing a band gap of 2.3 eV, while the spin-down channel exhibits a semimetallic phase with multiple Dirac points. The thermodynamic stability of the system is also checked out via AIMD simulations, showing the monolayer to be free of distortion at 500 K. The emergence of Dirac half-metal in carbon nitride monolayer via atomic doping reveals an exciting material platform for designing novel nanoelectronics and spintronics devices.

Investigation of vacancy defects and substitutional doping in AlSb monolayer with double layer honeycomb structure: a first-principles calculation

The experimental knowledge of the AlSb monolayer with double layer honeycomb structure is largely based on the recent publication (Le Qinet al2021ACS Nano158184), where this monolayer was recently synthesized. Therefore, the aim of our research is to consequently explore the effects of substitutional doping and vacancy point defects on the electronic and magnetic properties of the novel hexagonal AlSb monolayer. Besides experimental reports, the phonon band structure and cohesive energy calculations confirm the stability of the AlSb monolayer. Its direct bandgap has been estimated to be 0.9 eV via the hybrid functional method, which is smaller than the value of 1.6 eV of bulk material. The majority of vacancy defects and substitutional dopants change the electronic properties of the AlSb monolayer from semiconducting to metallic. Moreover, the Mg_Sbimpurity has demonstrated the addition of ferromagnetic behavior to the material. It is revealed through the calculation of formation energy that in Al-rich conditions, the vacant site of V_Sbis the most stable, while in Sb-rich circumstances the point defect of V_Algets the title. The formation energy has also been calculated for the substitutional dopants, showing relative stability of the defected structures. We undertook this theoretical study to inspire many experimentalists to focus their efforts on AlSb monolayer growth incorporating different impurities. It has been shown here that defect engineering is a powerful tool to tune the properties of novel AlSb two-dimensional monolayer for advanced nanoelectronic applications.

Role of Intrinsic Points Defects on the Electronic Structure of Metal-Insulator Transition h-FeS

Hexagonal iron sulfide (h-FeS) offers huge potential in the development of metal-insulator transition devices. A stoichiometric h-FeS is hard to obtain from its natural iron deficiency. The effect of this iron deficiency on the electronic properties is still obscure. Here, we performed a charged point defect calculation in h-FeS. We found that the most favorable point defect in h-FeS can be tuned with a proper synthesis environment. The single iron vacancy could induce a midgap state with 0.05 eV energy gap, which explains the h-FeS low experimental band gap value. Furthermore, a semiconductor-to-metal transition is observed in h-FeS with higher iron vacancy concentration showing better conductivity from the excess charges. We also observe that iron vacancies will induce a magnetic moment on the antiferromagnetic h-FeS. The findings that the induced MIT behavior and magnetic moment can be tuned by defect concentration may benefit the development of spintronics devices.

Point defects in two-dimensional BeO monolayer: a first-principles study on electronic and magnetic properties

Very recently, the 2D form of BeO monolayer has been successfully fabricated [Hui Zhang et al., ACS Nano, 2021, 15, 2497]. Motivated by these exciting experimental results on 2D layered BeO structures, the effect of atom adsorption, substitutional doping and vacancy defects on the electronic and magnetic properties of a hexagonal BeO monolayer have been systematically investigated employing density functional theory-based first-principles calculations. We found out that BeO monolayer is a semiconductor with an indirect band gap of 5.9 eV. Next, a plethora of atoms (27 in total) were adsorbed on the surface of BeO monolayer to tailor its electronic properties. The bond length, work function, difference in charge and magnetic moment were also calculated for all modifications covering the vacancy defects and substitutional doping. The band gap is also supplied for these changes, showing how these adjustments can provide amazing opportunities in granting a variety of options in band gap engineering and in transforming the BeO monolayer from a semiconductor to a dilute magnetic semiconductor or half-metal in view of different applications. The formation energy of the defects was also computed as an important indicator for the stability of the defected structures, when created in a real experiment. We have theoretically demonstrated several possible approaches to modify the properties of BeO monolayer in a powerful and controllable manner. Thus, we expect to inspire many experimental studies focused on two dimensional BeO growth and property tuning, and exploration for applications in advanced nanoelectronics.

First principles study of electronic and optical properties and photocatalytic performance of GaN-SiS van der Waals heterostructure

The vertical stacking of two-dimensional materials via van der Waals (vdW) interaction is a promising technique for tailoring the physical properties and fabricating potential devices to be applied in the emerging fields of materials science and nanotechnology. The structural, electronic and optical properties and photocatalytic performance of a GaN-SiS vdW heterostructure were explored using first principles calculations. The most stable stacking configuration found energetically stable, possesses a direct staggered band gap, which is crucial for separating photogenerated charged carriers in different constituents and is efficacious for solar cells. Further, the charge transfer occurred from the SiS to GaN layer, indicating that SiS exhibits p-type doping in the GaN-SiS heterobilayer. Interestingly, a systematic red-shift was observed in the optical absorption spectra of the understudy heterobilayer system. Moreover, the conduction band edge and valence band edge of the monolayers and corresponding heterostructure were located above and below the standard redox potentials for photocatalytic water splitting, making these systems promising for water dissociation for hydrogen fuel production. The results provide a route to design the GaN-SiS vdW heterostructure for the practical realization of next-generation light detection and energy harvesting devices.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Novel two-dimensional ZnO2, CdO2 and HgO2 monolayers: a first-principles-based prediction

In this paper, the existence of monolayers with the chemical formula XO₂, where X = Zn, Cd, and Hg with hexagonal and tetragonal lattice structures is theoretically predicted by means of first principles calculations.

Investigation of strain and doping on the electronic properties of single layers of C6N6 and C6N8: a first principles study

In this work, by performing first-principles calculations, we explore the effects of various atom impurities on the electronic and magnetic properties of single layers of C6N6 and C6N8. Our results indicate that atom doping may significantly modify the electronic properties. Surprisingly, doping Cr into a holey site of C6N6 monolayer was found to exhibit a narrow band gap of 125 meV upon compression strain, considering the spin-orbit coupling effect. Also, a C atom doped in C6N8 monolayer shows semi-metal nature under compression strains larger than -2%. Our results propose that Mg or Ca doped into strained C6N6 may exhibit small band gaps in the range of 10-30 meV. In addition, a magnetic-to-nonmagnetic phase transition can occur under large tensile strains in the Ca doped C6N8 monolayer. Our results highlight the electronic properties and magnetism of C6N6 and C6N8 monolayers. Our results show that the electronic properties can be effectively modified by atom doping and mechanical strain, thereby offering new possibilities to tailor the electronic and magnetic properties of C6N6 and C6N8 carbon nitride monolayers.

Strain and electric field tuning of semi-metallic character WCrCO2MXenes with dual narrow band gap

Motivated by the recent successful synthesis of double-M carbides, we investigate structural and electronic properties of WCrC and WCrCO2monolayers and the effects of biaxial and out-of-plane strain and electric field using density functional theory. WCrC and WCrCO2monolayers are found to be dynamically stable. WCrC is metallic and WCrCO2display semi-metallic character with narrow band gap, which can be controlled by strain engineering and electric field. WCrCO2monolayer exhibits a dual band gap which is preserved in the presence of an electric field. The band gap of WCrCO2monolayer increases under uniaxial strain while it becomes metallic under tensile strain, resulting in an exotic 2D double semi-metallic behavior. Our results demonstrate that WCrCO2is a new platform for the study of novel physical properties in two-dimensional Dirac materials and which may provide new opportunities to realize high-speed low-dissipation devices.

Strain, electric-field and functionalization induced widely tunable electronic properties in MoS2/BC 3, /C 3 N and /[Formula: see text] van der Waals heterostructures

In this paper, the effect of BC ₃, C ₃ N and [Formula: see text] substrates on the atomic and electronic properties of MoS₂ were systematically investigated using first-principles calculations. Our results show that the MoS₂/BC ₃ and MoS₂/C ₃ N4 heterostructures are direct semiconductors with band gaps of 0.4 and 1.74 eV, respectively, while MoS₂/C ₃ N is a metal. Furthermore, the influence of strain and electric field on the electronic structure of these van der Waals heterostructures is investigated. The MoS₂/BC₃ heterostructure, for strains larger than -4%, transforms it into a metal where the metallic character is maintained for strains larger than -6%. The band gap decreases with increasing strain to 0.35 eV (at +2%), while for strain (>+6%) a direct-indirect band gap transition is predicted to occur. For the MoS₂/C₃N heterostructure, the metallic character persists for all strains considered. On applying an electric field, the electronic properties of MoS₂/C₃N₄ are modified and its band gap decreases as the electric field increases. Interestingly, the band gap reaches 30 meV at +0.8 V/Å, and with increase above +0.8 V/Å, a semiconductor-to-metal transition occurs. Furthermore, we investigated effects of semi- and full-hydrogenation of MoS₂/C₃N and we found that it leads to a metallic and semiconducting character, respectively.

Tunable electronic properties of the dynamically stable layered mineral Pt2HgSe3 (Jacutingaite)

Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt₂HgSe₃. Effects of uniaxial and biaxial strain, layer thickness, electric field and out-of-plane pressure on the electronic properties are systematically investigated.

Electronic structures, and optical and photocatalytic properties of the BP–BSe van der Waals heterostructures

The combination of two-dimensional materials in the form of van der Waals (vdW) heterostructures has been shown to be an effective method for designing electronic and optoelectronic equipment.

Embedding of atoms into the nanopore sites of the C6N6 and C6N8 porous carbon nitride monolayers with tunable electronic properties

Using first-principles calculations, we study the effect of embedding various atoms into the nanopore sites of both C₆N₆ and C₆N₈ monolayers.

The mechanical, electronic, optical and thermoelectric properties of two-dimensional honeycomb-like of XSb (X = Si, Ge, Sn) monolayers: a first-principles calculations

Herein, by using first-principles calculations, we demonstrate a two-dimensional (2D) of XSb (X = Si, Ge, and Sn) monolayers that have a honey-like crystal structure.

Modulating the electro-optical properties of doped C3N monolayers and graphene bilayers via mechanical strain and pressure

The effect of atomic doping on the electronic properties of C₃N monolayer and graphene bilayer is investigated. We found that doped C₃N monolayer and doped graphene bilayer are a direct semiconductor. Our result show that the electronic properties of the studied structures can be modulated by electric field and mechanical strain.