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Qin F, Li Z, Bi X, Zhai K, Ao L, Chen P, Chen G, Huang J, Qiu C, Liu Z, Yuan H. A Quantitative Arrott Analysis Methodology for Magnetic Susceptibility of Microscale Ferromagnetic Nanoflakes. NANO LETTERS 2024. [PMID: 39566891 DOI: 10.1021/acs.nanolett.4c04438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2024]
Abstract
Probing magnetic susceptibility of a microsized ferromagnet is a long-standing problem in condensed matter physics. Among various measuring methods for magnetic susceptibility including vibrating sample magnetometry and superconducting quantum interference device magnetometry, almost all require large-scale bulk samples or thick films. However, the quantitative measurement for magnetic susceptibility on a microscale nanoflake is a great challenge. Here, we demonstrate a new analysis method to quantitatively evaluate the magnetic susceptibility of a microscale ferromagnetic nanoflake. Based on the Arrott plot of magnetization isotherms obtained from anomalous Hall resistance, we achieve an in situ evaluation of the value of magnetic susceptibility of a microscale ferromagnetic Fe5GeTe2 nanoflake, identification of the out-of-plane and in-plane magnetization, and investigation of the magnetic anisotropy transition with quantifying critical exponents. Our method reveals critical information on magnetic phase transition in microscale ferromagnetic materials, providing deep insight into spin dynamics of correlated electron systems.
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Affiliation(s)
- Feng Qin
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Kun Zhai
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Lingyi Ao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Ganyu Chen
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
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2
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Brennan C, Joly AG, Wang CF, Xie T, O'Callahan BT, Crampton K, Teklu A, Shi L, Hu M, Zhang Q, Kuthirummal N, Arachchige HS, Chaturvedi A, Zhang H, Mandrus D, Gong C, Gong Y. Strong Surface-Enhanced Coherent Phonon Generation in van der Waals Materials. J Phys Chem Lett 2024; 15:10442-10450. [PMID: 39388532 DOI: 10.1021/acs.jpclett.4c02208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/12/2024]
Abstract
Terahertz (THz) coherent phonons have emerged as promising candidates for the next generation of high-speed, low-energy information carriers in atomically thin phononic or phonon-integrated on-chip devices. However, effectively manipulating THz coherent phonons remains a significant challenge. In this study, we investigated THz coherent phonon generation in exfoliated van der Waals (vdW) flakes of Fe3GeTe2, Fe5GeTe2, and FePS3. We successfully generated the THz A1g coherent phonon mode in these vdW flakes. An innovative approach involved partially exfoliating vdW flakes on a gold substrate and partially on a silicon (Si) substrate to compare the THz coherent phonon generation between both sides. Interestingly, we observed a significantly enhanced THz coherent phonon in the vdW/gold area compared with that in the vdW/Si area. Frequency-domain Raman mapping across the vdW flakes corroborated these findings. Numerical simulations further indicated a stronger enhanced surface field in vdW/gold structures than in vdW/Si structures. Consequently, we attribute the observed enhancement in THz coherent phonon generation to the increased surface field on the gold substrate. This enhancement was consistent across the three different vdW materials studied, suggesting the universality of this strategy. Our results hold promise for advancing the design of THz phononic and phonon-integrated devices.
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Affiliation(s)
- Christian Brennan
- Department of Physics and Astronomy, College of Charleston, 58 Coming Street, Charleston, South Carolina 29424, United States
| | - Alan G Joly
- Physical Sciences Division, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352, United States
| | - Chih-Feng Wang
- Physical Sciences Division, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352, United States
| | - Ti Xie
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, Maryland 20742, United States
| | - Brian T O'Callahan
- Physical Sciences Division, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352, United States
| | - Kevin Crampton
- Environmental Molecular Sciences Division, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352, United States
| | - Alem Teklu
- Department of Physics and Astronomy, College of Charleston, 58 Coming Street, Charleston, South Carolina 29424, United States
| | - Leilei Shi
- Department of Engineering, College of Charleston, 81 St. Philips Street, Charleston, South Carolina 29424, United States
| | - Ming Hu
- Department of Mechanical Engineering, University of South Carolina, 541 Main Street, Columbia, South Carolina 29208, United States
| | - Qian Zhang
- Department of Engineering, College of Charleston, 81 St. Philips Street, Charleston, South Carolina 29424, United States
| | - Narayanan Kuthirummal
- Department of Engineering, College of Charleston, 81 St. Philips Street, Charleston, South Carolina 29424, United States
| | - Hasitha Suriya Arachchige
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Apoorva Chaturvedi
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
| | - David Mandrus
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, Maryland 20742, United States
| | - Yu Gong
- Department of Physics and Astronomy, College of Charleston, 58 Coming Street, Charleston, South Carolina 29424, United States
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3
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Gao X, Zhai K, Fu H, Yan J, Yue D, Ke F, Zhao Y, Mu C, Nie A, Xiang J, Wen F, Wang B, Xue T, Wang L, Yuan H, Liu Z. Enhanced Ferromagnetism and Tunable Magnetic Anisotropy in a van der Waals Ferromagnet. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2402819. [PMID: 38958507 PMCID: PMC11434145 DOI: 10.1002/advs.202402819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 06/19/2024] [Indexed: 07/04/2024]
Abstract
2D van der Waals (vdW) magnets have recently emerged as a promising material system for spintronic device innovations due to their intriguing phenomena in the reduced dimension and simple integration of magnetic heterostructures without the restriction of lattice matching. However, it is still challenging to realize Curie temperature far above room temperature and controllable magnetic anisotropy for spintronics application in 2D vdW magnetic materials. In this work, the pressure-tuned dome-like ferromagnetic-paramagnetic phase diagram in an iron-based 2D layered ferromagnet Fe3GaTe2 is reported. Continuously tunable magnetic anisotropy from out-of-plane to in-plane direction is achieved via the application of pressure. Such behavior is attributed to the competition between intralayer and interlayer exchange interactions and enhanced DOS near the Fermi level. The study presents the prominent properties of pressure-engineered 2D ferromagnetic materials, which can be used in the next-generation spintronic devices.
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Affiliation(s)
- Xin Gao
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Kun Zhai
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Huixia Fu
- Center of Quantum Materials and Devicesand Chongqing Key Laboratory for Strongly Coupled PhysicsChongqing UniversityChongqing401331China
| | - Junxin Yan
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Dongdong Yue
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Feng Ke
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Ying Zhao
- Center of Quantum Materials and Devicesand Chongqing Key Laboratory for Strongly Coupled PhysicsChongqing UniversityChongqing401331China
| | - Congpu Mu
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Anmin Nie
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Jianyong Xiang
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Fusheng Wen
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Bochong Wang
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Tianyu Xue
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Lin Wang
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
| | - Hongtao Yuan
- National Laboratory of Solid‐State MicrostructuresJiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciencesand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210000China
| | - Zhongyuan Liu
- Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066044China
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4
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Lim H, Ahn HB, Lee C. Magnetic properties of ferromagnetic nanoparticles of Fe xGeTe 2( x= 3, 5) directly exfoliated and dispersed in pure water. NANOTECHNOLOGY 2024; 35:395604. [PMID: 38959866 DOI: 10.1088/1361-6528/ad5e8a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 07/03/2024] [Indexed: 07/05/2024]
Abstract
FexGeTe2(x= 3, 5) are two-dimensional ferromagnetic (FM) materials that have gained significant attention from researchers due to their relatively high Curie temperature and tunability. However, the methods for preparing FM nanoparticles (FNPs) and large-area FexGeTe2films are still in the early stages. Here, we studied the magnetic properties of FexGeTe2FNPs exfoliated via wet exfoliation in pure water. The coercive field of Fe3GeTe2FNPs increases significantly, up to 60 times, while that of Fe5GeTe2only slightly increases from that of bulk crystals. Further investigation related to the dimension of nanoparticles and the Henkel plot analysis reveals that the variation in their coercive field stems from the material's thickness-dependent coercive field and the type of term that governs the interaction between single-domain nanoparticles. Our work demonstrates a facile method for preparing FNPs using van der Waals FM materials and tuning their magnetic properties.
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Affiliation(s)
- Hyunjong Lim
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyo-Bin Ahn
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Changgu Lee
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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5
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Yao T, Qubie WL, Kumar P, Bai X, Hu S, Xue D, Zhang J. Critical behaviors of van der Waals itinerant ferromagnet Fe 3.8GaTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:345801. [PMID: 38759671 DOI: 10.1088/1361-648x/ad4d48] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Accepted: 05/17/2024] [Indexed: 05/19/2024]
Abstract
The critical behavior of the van der Waals ferromagnet Fe3.8GaTe2was systematically studied through measurements of isothermal magnetization, with the magnetic field applied along thec-axis. Fe3.8GaTe2undergoes a non-continuous paramagnetic to ferromagnetic phase transition at the Curie temperatureTc∼ 355 K. A comprehensive analysis of isotherms aroundTcutilizing the modified Arrott diagram, the Kouvel-Fisher method, the Widom scaling law, and the critical isotherm analysis yielded the critical exponent ofβ= 0.411,γ= 1.246, andδ= 3.99. These critical exponents are found to be self-consistent and align well with the scaling equation at high magnetic fields, underscoring the reliability and intrinsic nature of these parameters. However, the low-field data deviates from the scaling relation, exhibiting a vertical trend whenT
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Affiliation(s)
- Tianyang Yao
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - W L Qubie
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Pushpendra Kumar
- School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India
| | - Xu Bai
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Shixin Hu
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Desheng Xue
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Junli Zhang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
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6
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Wu H, Chen L, Malinowski P, Jang BG, Deng Q, Scott K, Huang J, Ruff JPC, He Y, Chen X, Hu C, Yue Z, Oh JS, Teng X, Guo Y, Klemm M, Shi C, Shi Y, Setty C, Werner T, Hashimoto M, Lu D, Yilmaz T, Vescovo E, Mo SK, Fedorov A, Denlinger JD, Xie Y, Gao B, Kono J, Dai P, Han Y, Xu X, Birgeneau RJ, Zhu JX, da Silva Neto EH, Wu L, Chu JH, Si Q, Yi M. Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet. Nat Commun 2024; 15:2739. [PMID: 38548765 PMCID: PMC10978849 DOI: 10.1038/s41467-024-46862-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Accepted: 03/13/2024] [Indexed: 04/01/2024] Open
Abstract
Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe5-δGeTe2. We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.
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Affiliation(s)
- Han Wu
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Lei Chen
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Paul Malinowski
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Bo Gyu Jang
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Republic of Korea
| | - Qinwen Deng
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Kirsty Scott
- Department of Physics, Yale University, New Haven, CT, USA
- Energy Sciences Institute, Yale University, West Haven, CT, USA
- Department of Physics and Astronomy, University of California, Davis, CA, USA
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Jianwei Huang
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Jacob P C Ruff
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, USA
| | - Yu He
- Department of Physics, University of California, Berkeley, CA, USA
| | - Xiang Chen
- Department of Physics, University of California, Berkeley, CA, USA
| | - Chaowei Hu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Ziqin Yue
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Ji Seop Oh
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Xiaokun Teng
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Yucheng Guo
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Mason Klemm
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Yue Shi
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Chandan Setty
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Tyler Werner
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Donghui Lu
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Turgut Yilmaz
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, USA
| | - Elio Vescovo
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, USA
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Alexei Fedorov
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | | | - Yaofeng Xie
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Bin Gao
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Junichiro Kono
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
- Departments of Electrical and Computer Engineering, Rice University, Houston, TX, USA
| | - Pengcheng Dai
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Robert J Birgeneau
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Jian-Xin Zhu
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Eduardo H da Silva Neto
- Department of Physics, Yale University, New Haven, CT, USA
- Energy Sciences Institute, Yale University, West Haven, CT, USA
- Department of Physics and Astronomy, University of California, Davis, CA, USA
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Liang Wu
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Qimiao Si
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Ming Yi
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA.
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7
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Chen Z, Yang Y, Ying T, Guo JG. High- Tc Ferromagnetic Semiconductor in Thinned 3D Ising Ferromagnetic Metal Fe 3GaTe 2. NANO LETTERS 2024; 24:993-1000. [PMID: 38190333 DOI: 10.1021/acs.nanolett.3c04462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/10/2024]
Abstract
Emergent phenomena in exfoliated layered transition metal compounds have attracted much attention in the past several years. Especially, pursuing a ferromagnetic insulator is one of the exciting goals for stimulating a high-performance magnetoelectrical device. Here, we report the transition from a metallic to high-Tc semiconductor-like ferromagnet in thinned Fe3GaTe2, accompanied with competition among various magnetic interactions. As evidenced by critical exponents, Fe3GaTe2 is the first layered ferromagnet described by a 3D Ising model coupled with long-range interactions. An extra magnetic phase from competition between ferromagnetism and antiferromagnetism emerges at a low field below Tc. Upon reducing thickness, the Curie temperature (Tc) monotonically decreases from 342 K for bulk to 200 K for 1-3 nm flakes, which is the highest Tc reported as far as we know. Furthermore, a semiconductor-like behavior has been observed in such 1-3 nm flakes. Our results highlight the importance of Fe3GaTe2 in searching for ferromagnetic insulators, which may benefit spintronic device fabrication.
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Affiliation(s)
- Zhaoxu Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuxin Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Sciences and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianping Ying
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jian-Gang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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8
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Schulz F, Litzius K, Powalla L, Birch MT, Gallardo RA, Satheesh S, Weigand M, Scholz T, Lotsch BV, Schütz G, Burghard M, Wintz S. Direct Observation of Propagating Spin Waves in the 2D van der Waals Ferromagnet Fe 5GeTe 2. NANO LETTERS 2023; 23:10126-10131. [PMID: 37955345 PMCID: PMC10683057 DOI: 10.1021/acs.nanolett.3c02212] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2023] [Revised: 11/01/2023] [Accepted: 11/03/2023] [Indexed: 11/14/2023]
Abstract
Magnetism in reduced dimensionalities is of great fundamental interest while also providing perspectives for applications of materials with novel functionalities. In particular, spin dynamics in two dimensions (2D) have become a focus of recent research. Here, we report the observation of coherent propagating spin-wave dynamics in a ∼30 nm thick flake of 2D van der Waals ferromagnet Fe5GeTe2 using X-ray microscopy. Both phase and amplitude information were obtained by direct imaging below TC for frequencies from 2.77 to 3.84 GHz, and the corresponding spin-wave wavelengths were measured to be between 1.5 and 0.5 μm. Thus, parts of the magnonic dispersion relation were determined despite a relatively high magnetic damping of the material. Numerically solving an analytic multilayer model allowed us to corroborate the experimental dispersion relation and predict the influence of changes in the saturation magnetization or interlayer coupling, which could be exploited in future applications by temperature control or stacking of 2D-heterostructures.
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Affiliation(s)
- Frank Schulz
- Max
Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart, Germany
| | - Kai Litzius
- Max
Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart, Germany
- Universität
Augsburg, D-86159 Augsburg, Germany
| | - Lukas Powalla
- Max
Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Max T. Birch
- Max
Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart, Germany
- RIKEN
Center for Emergent Matter Science, JP-351-0198 Wako, Japan
| | - Rodolfo A. Gallardo
- Universidad
Técnica Federico Santa María, Avenida España 1680, 2390123 Valparaiso, Chile
| | - Sayooj Satheesh
- Max
Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Markus Weigand
- Max
Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart, Germany
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
| | - Tanja Scholz
- Max
Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Bettina V. Lotsch
- Max
Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Gisela Schütz
- Max
Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart, Germany
| | - Marko Burghard
- Max
Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Sebastian Wintz
- Max
Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart, Germany
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
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9
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Ren H, Lan M. Progress and Prospects in Metallic Fe xGeTe 2 (3 ≤ x ≤ 7) Ferromagnets. Molecules 2023; 28:7244. [PMID: 37959664 PMCID: PMC10649090 DOI: 10.3390/molecules28217244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 10/05/2023] [Accepted: 10/21/2023] [Indexed: 11/15/2023] Open
Abstract
Thermal fluctuations in two-dimensional (2D) isotropy systems at non-zero finite temperatures can destroy the long-range (LR) magnetic order due to the mechanisms addressed in the Mermin-Wanger theory. However, the magnetic anisotropy related to spin-orbit coupling (SOC) may stabilize magnetic order in 2D systems. Very recently, 2D FexGeTe2 (3 ≤ x ≤ 7) with a high Curie temperature (TC) has not only undergone significant developments in terms of synthetic methods and the control of ferromagnetism (FM), but is also being actively explored for applications in various devices. In this review, we introduce six experimental methods, ten ferromagnetic modulation strategies, and four spintronic devices for 2D FexGeTe2 materials. In summary, we outline the challenges and potential research directions in this field.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Liaocheng 252000, China
| | - Mu Lan
- College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China
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10
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Högen M, Fujita R, Tan AKC, Geim A, Pitts M, Li Z, Guo Y, Stefan L, Hesjedal T, Atatüre M. Imaging Nucleation and Propagation of Pinned Domains in Few-Layer Fe 5-xGeTe 2. ACS NANO 2023; 17:16879-16885. [PMID: 37642321 PMCID: PMC10510720 DOI: 10.1021/acsnano.3c03825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 08/23/2023] [Indexed: 08/31/2023]
Abstract
Engineering nontrivial spin textures in magnetic van der Waals materials is highly desirable for spintronic applications based on hybrid heterostructures. The recent observation of labyrinth and bubble domains in the near room-temperature ferromagnet Fe5-xGeTe2 down to a bilayer thickness was thus a significant advancement toward van der Waals-based many-body physics. However, the physical mechanism responsible for stabilizing these domains remains unclear and requires further investigation. Here, we combine cryogenic scanning diamond quantum magnetometry and field reversal techniques to elucidate the high-field propagation and nucleation of bubble domains in trilayer Fe5-xGeTe2. We provide evidence of pinning-induced nucleation of magnetic bubbles and further show an unexpectedly high layer-dependent coercive field. These measurements can be easily extended to a wide range of magnetic materials to provide valuable nanoscale insight into domain processes critical for spintronic applications.
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Affiliation(s)
- Michael Högen
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, Cambridge, CB3 0HE, United
Kingdom
| | - Ryuji Fujita
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford, OX1 3PU, United
Kingdom
| | - Anthony K. C. Tan
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, Cambridge, CB3 0HE, United
Kingdom
- Department
of Physics, Imperial College, London, SW7 2AZ, United Kingdom
| | - Alexandra Geim
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, Cambridge, CB3 0HE, United
Kingdom
| | - Michael Pitts
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, Cambridge, CB3 0HE, United
Kingdom
| | - Zhengxian Li
- School
of Physical Science and Technology, ShanghaiTech
University, Shanghai 201210, China
| | - Yanfeng Guo
- School
of Physical Science and Technology, ShanghaiTech
University, Shanghai 201210, China
| | - Lucio Stefan
- Center
for Hybrid Quantum Networks (Hy-Q), Niels
Bohr Institute, 2100 Copenhagen, Denmark
| | - Thorsten Hesjedal
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford, OX1 3PU, United
Kingdom
| | - Mete Atatüre
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, Cambridge, CB3 0HE, United
Kingdom
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11
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Wang H, Lu H, Guo Z, Li A, Wu P, Li J, Xie W, Sun Z, Li P, Damas H, Friedel AM, Migot S, Ghanbaja J, Moreau L, Fagot-Revurat Y, Petit-Watelot S, Hauet T, Robertson J, Mangin S, Zhao W, Nie T. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe 4GeTe 2 far above room temperature. Nat Commun 2023; 14:2483. [PMID: 37120587 PMCID: PMC10148834 DOI: 10.1038/s41467-023-37917-8] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2022] [Accepted: 04/05/2023] [Indexed: 05/01/2023] Open
Abstract
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.
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Affiliation(s)
- Hangtian Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Haichang Lu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
- Engineering Department, Cambridge University, Cambridge, CB2 1PZ, UK.
| | - Zongxia Guo
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Ang Li
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peichen Wu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Jing Li
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Weiran Xie
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhimei Sun
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, USA
| | - Héloïse Damas
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Anna Maria Friedel
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
- Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663, Kaiserslautern, Germany
| | - Sylvie Migot
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Jaafar Ghanbaja
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Luc Moreau
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | | | | | - Thomas Hauet
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - John Robertson
- Engineering Department, Cambridge University, Cambridge, CB2 1PZ, UK
| | - Stéphane Mangin
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
| | - Weisheng Zhao
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
| | - Tianxiao Nie
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
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12
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Casas BW, Li Y, Moon A, Xin Y, McKeever C, Macy J, Petford-Long AK, Phatak CM, Santos EJG, Choi ES, Balicas L. Coexistence of Merons with Skyrmions in the Centrosymmetric Van Der Waals Ferromagnet Fe 5- x GeTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212087. [PMID: 36780298 DOI: 10.1002/adma.202212087] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2022] [Revised: 02/02/2023] [Indexed: 05/17/2023]
Abstract
Fe5- x GeTe2 is a centrosymmetric, layered van der Waals (vdW) ferromagnet that displays Curie temperatures Tc (270-330 K) that are within the useful range for spintronic applications. However, little is known about the interplay between its topological spin textures (e.g., merons, skyrmions) with technologically relevant transport properties such as the topological Hall effect (THE) or topological thermal transport. Here, via high-resolution Lorentz transmission electron microscopy, it is shown that merons and anti-meron pairs coexist with Néel skyrmions in Fe5- x GeTe2 over a wide range of temperatures and probe their effects on thermal and electrical transport. A THE is detected, even at room T, that senses merons at higher T's, as well as their coexistence with skyrmions as T is lowered, indicating an on-demand thermally driven formation of either type of spin texture. Remarkably, an unconventional THE is also observed in absence of Lorentz force, and it is attributed to the interaction between charge carriers and magnetic field-induced chiral spin textures. These results expose Fe5-x GeTe2 as a promising candidate for the development of applications in skyrmionics/meronics due to the interplay between distinct but coexisting topological magnetic textures and unconventional transport of charge/heat carriers.
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Affiliation(s)
- Brian W Casas
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Yue Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Alex Moon
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Yan Xin
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Conor McKeever
- Institute for Condensed Matter and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
| | - Juan Macy
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Amanda K Petford-Long
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Charudatta M Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Elton J G Santos
- Institute for Condensed Matter and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Donostia International Physics Center (DIPC), 20018, Donostia-San Sebastián, Basque Country, Spain
| | - Eun Sang Choi
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
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13
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Zhao B, Ngaloy R, Ghosh S, Ershadrad S, Gupta R, Ali K, Hoque AM, Karpiak B, Khokhriakov D, Polley C, Thiagarajan B, Kalaboukhov A, Svedlindh P, Sanyal B, Dash SP. A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe 5 GeTe 2 /Graphene Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209113. [PMID: 36641649 DOI: 10.1002/adma.202209113] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe5 GeTe2 in heterostructures with graphene is demonstrated. The room-temperature spintronic properties of Fe5 GeTe2 are measured at the interface with graphene with a negative spin polarization. Lateral spin-valve and spin-precession measurements provide unique insights by probing the Fe5 GeTe2 /graphene interface spintronic properties via spin-dynamics measurements, revealing multidirectional spin polarization. Density functional theory calculations in conjunction with Monte Carlo simulations reveal significantly canted Fe magnetic moments in Fe5 GeTe2 along with the presence of negative spin polarization at the Fe5 GeTe2 /graphene interface. These findings open opportunities for vdW interface design and applications of vdW-magnet-based spintronic devices at ambient temperatures.
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Affiliation(s)
- Bing Zhao
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Roselle Ngaloy
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Sukanya Ghosh
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Soheil Ershadrad
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Rahul Gupta
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala, SE-751 03, Sweden
| | - Khadiza Ali
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
- MAX IV Laboratory, Lund University, Lund, SE-221 00, Sweden
| | - Anamul Md Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Bogdan Karpiak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Dmitrii Khokhriakov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Craig Polley
- MAX IV Laboratory, Lund University, Lund, SE-221 00, Sweden
| | | | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Peter Svedlindh
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala, SE-751 03, Sweden
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
- Graphene Center, Chalmers University of Technology, Göteborg, SE-41296, Sweden
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14
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Fujita R, Bassirian P, Li Z, Guo Y, Mawass MA, Kronast F, van der Laan G, Hesjedal T. Layer-Dependent Magnetic Domains in Atomically Thin Fe 5GeTe 2. ACS NANO 2022; 16:10545-10553. [PMID: 35802911 PMCID: PMC9331157 DOI: 10.1021/acsnano.2c01948] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Magnetic domain formation in two-dimensional (2D) materials gives perspectives into the fundamental origins of 2D magnetism and also motivates the development of advanced spintronics devices. However, the characterization of magnetic domains in atomically thin van der Waals (vdW) flakes remains challenging. Here, we employ X-ray photoemission electron microscopy (XPEEM) to perform layer-resolved imaging of the domain structures in the itinerant vdW ferromagnet Fe5GeTe2 which shows near room temperature bulk ferromagnetism and a weak perpendicular magnetic anisotropy (PMA). In the bulk limit, we observe the well-known labyrinth-type domains. Thinner flakes, on the other hand, are characterized by increasingly fragmented domains. While PMA is a characteristic property of Fe5GeTe2, we observe a spin-reorientation transition with the spins canting in-plane for flakes thinner than six layers. Notably, a bubble phase emerges in four-layer flakes. This thickness dependence, which clearly deviates from the single-domain behavior observed in other 2D magnetic materials, demonstrates the exciting prospect of stabilizing complex spin textures in 2D vdW magnets at relatively high temperatures.
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Affiliation(s)
- Ryuji Fujita
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Parks Road, Oxford, OX1
3PU, United Kingdom
| | - Pedram Bassirian
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Parks Road, Oxford, OX1
3PU, United Kingdom
- Max
Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Zhengxian Li
- School
of Physical Science and Technology, ShanghaiTech
University, Shanghai 201210, China
| | - Yanfeng Guo
- School
of Physical Science and Technology, ShanghaiTech
University, Shanghai 201210, China
| | - Mohamad A. Mawass
- Helmholtz-Zentrum
Berlin für Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany
| | - Florian Kronast
- Helmholtz-Zentrum
Berlin für Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany
| | - Gerrit van der Laan
- Diamond
Light Source, Harwell Science and Innovation
Campus, Didcot, OX11 0DE, United Kingdom
| | - Thorsten Hesjedal
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Parks Road, Oxford, OX1
3PU, United Kingdom
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15
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Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 100] [Impact Index Per Article: 33.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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16
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Li G, Ma S, Li Z, Zhang Y, Diao J, Xia L, Zhang Z, Huang Y. High-Quality Ferromagnet Fe 3GeTe 2 for High-Efficiency Electromagnetic Wave Absorption and Shielding with Wideband Radar Cross Section Reduction. ACS NANO 2022; 16:7861-7879. [PMID: 35467351 DOI: 10.1021/acsnano.2c00512] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A high-quality Fe3GeTe2 single crystal with good electrical, magnetic, and electromagnetic wave absorption and shielding properties was prepared in a large quantity (10 g level) by solid-phase sintering and recrystallization method, which would promote its in-depth research and practical application. It has good room-temperature electrical properties with a mobility of 42 cm2/V·s, a sheet (bulk) carrier concentration of +1.64 × 1018 /cm2 (+3.28 × 1020 /cm3), and a conductivity of 2196.35 S/cm. Also, a Curie temperature of 238 K indicates the high magnetic transition temperature and a paramagnetic Curie temperature of 301 K shows the large ferromagnetic-paramagnetic transition zone induced by the residual short-range ferromagnetic domains. Particularly, Fe3GeTe2 is in a loosely packed state when used as a loss agent; the electromagnetic wave absorption with a reflection loss of -34.7 dB at 3.66 GHz under thin thickness was shown. Meanwhile, the absorption band can be effectively regulated by varying the thickness. Moreover, Fe3GeTe2 in a close-packed state exhibits terahertz shielding values of 75.1 and 103.2 dB at very thin thicknesses of 70 and 380 μm, and the average shielding value is higher than 47 dB, covering the entire bandwidth from 0.1 to 3.0 THz. Furthermore, by using Fe3GeTe2 as a patch, the wideband radar cross-section can be effectively reduced by up to 33 dBsm. Resultantly, Fe3GeTe2 will be a promising candidate in the electromagnetic protection field.
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Affiliation(s)
- Guanghao Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Suping Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Zhuo Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Yawen Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Jianglin Diao
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Lun Xia
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Zhiwei Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
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17
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Zhang C, Wang L, Gu Y, Zhang X, Xia X, Jiang S, Huang LL, Fu Y, Liu C, Lin J, Zou X, Su H, Mei JW, Dai JF. Hard ferromagnetic behavior in atomically thin CrSiTe 3 flakes. NANOSCALE 2022; 14:5851-5858. [PMID: 35357377 DOI: 10.1039/d2nr00331g] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The research on two-dimensional (2D) van der Waals (vdW) magnets has promoted the development of ultrahigh-density data storage and nanoscale spintronic devices. However, the soft ferromagnetic behavior in most 2D magnets, which means the absence of remanent magnetization, severely limits their applications in realistic devices. Here, we report a layer-controlled ferromagnetic behavior in atomically thin CrSiTe3 flakes, where a transition from the soft to the hard ferromagnetic state occurs as the thickness of samples decreases down to several nanometers. Phenomenally, in contrast to the negligible hysteresis loop in the bulk counterparts, atomically thin CrSiTe3 shows a rectangular loop with finite magnetization and coercivity as the thickness decreases down to ∼8 nm, indicative of a single-domain and out-of-plane ferromagnetic order. We find that the stray field is weakened with decreasing thickness, which suppresses the formation of the domain wall. In addition, thickness-dependent ferromagnetic properties also reveal a crossover from 3 dimensional to 2 dimensional Ising ferromagnets, accompanied by a drop of the Curie temperature from 33 K for bulk to ∼17 K for the 4 nm sample. Our study paves the way towards exploring and learning much more about atomically thin and layered intrinsic ferromagnets.
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Affiliation(s)
- Cheng Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Le Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Yue Gu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Xi Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- Shannxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xiuquan Xia
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Shaolong Jiang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Liang-Long Huang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Ying Fu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Cai Liu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Huimin Su
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Jia-Wei Mei
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
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18
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Tan C, Xie WQ, Zheng G, Aloufi N, Albarakati S, Algarni M, Li J, Partridge J, Culcer D, Wang X, Yi JB, Tian M, Xiong Y, Zhao YJ, Wang L. Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe 5GeTe 2. NANO LETTERS 2021; 21:5599-5605. [PMID: 34152781 DOI: 10.1021/acs.nanolett.1c01108] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet Fe5GeTe2 (F5GT) into 5.4 nm (around two unit cells), we find that the ferromagnetism (FM) in F5GT can be substantially tuned by the thickness. Moreover, by utilizing a solid protonic gate, an electron doping concentration of above 1021 cm-3 has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.
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Affiliation(s)
- Cheng Tan
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Wen-Qiang Xie
- Department of Physics, South China University of Technology, Guangzhou 510640, China
| | - Guolin Zheng
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Nuriyah Aloufi
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Sultan Albarakati
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Meri Algarni
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Junbo Li
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei 230031, Anhui, China
| | - James Partridge
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Dimitrie Culcer
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Xiaolin Wang
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
- ARC Centre for Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Jia Bao Yi
- Global Innovative Center for Advanced Nanomaterials, School of Engineering, University of Newcastle, Callaghan, New South Wales 2308, Australia
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei 230031, Anhui, China
- Department of Physics, School of Physics and Materials Science, Anhui University, Hefei 230601, Anhui, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yimin Xiong
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei 230031, Anhui, China
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou 510640, China
| | - Lan Wang
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
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