Achieving EQE of 16,700% in P3HT:PC71BM based photodetectors by trap-assisted photomultiplication

Vertically Phase Separated Photomultiplication Organic Photodetectors with p-n Heterojunction Type Ultrafast Dynamic Characteristics

Photomultiplication (PM)-type organic photodetectors (OPDs), which typically form a homogeneous distribution (HD) of n-type dopants in a p-type polymer host (HD PM-type OPDs), have achieved a breakthrough in device responsivity by surpassing a theoretical limit of external quantum efficiency (EQE). However, they face limitations in higher dark current and slower dynamic characteristics compared to p-n heterojunction (p-n HJ) OPDs due to inherent long lifetime of trapped electrons. To overcome this, a new PM-type OPD is developed that demonstrates ultrafast dynamic properties through a vertical phase separation (VPS) strategy between the p-type polymer and n-type acceptor, referred to as VPS PM-type OPDs. Notably, VPS PM-type OPDs show three orders of magnitude increase in -3 dB cut-off frequency (120 kHz) and over a 200-fold faster response time (rising time = 4.8 µs, falling time = 8.3 µs) compared to HD PM-type OPDs, while maintaining high EQE of 1121% and specific detectivity of 2.53 × 1013 Jones at -10 V. The VPS PM-type OPD represents a groundbreaking advancement by demonstrating the coexistence of p-n HJ and PM modes within a single photoactive layer for the first time. This innovative approach holds the potential to enhance both static and dynamic properties of OPDs.

Orientation-Dependent Photoconductivity of Quasi-2D Nanocrystal Self-Assemblies: Face-Down, Edge-Up Versus Randomly Oriented Quantum Wells

Here, strongly orientation-dependent lateral photoconductivity of a CdSe monolayer colloidal quantum wells (CQWs) possessing short-chain ligands is reported. A controlled liquid-air self-assembly technique is utilized to deliberately engineer the alignments of CQWs into either face-down (FO) or edge-up (EO) orientation on the substrate as opposed to randomly oriented (RO) CQWs prepared by spin-coating. Adapting planar configuration metal-semiconductor-metal (MSM) photodetectors, it is found that lateral conductivity spans ≈2 orders of magnitude depending on the orientation of CQWs in the film in the case of utilizing short ligands. The long native ligands of oleic acid (OA) are exchanged with short-chain ligands of 2-ethylhexane-1-thiol (EHT) to reduce the inter-platelet distance, which significantly improved the photoresponsivity from 4.16, 0.58, and 4.79 mA W-1 to 528.7, 6.17, and 94.2 mA W-1, for the MSM devices prepared with RO, FO, and EO, before and after ligands exchange, respectively. Such CQW orientation control profoundly impacts the photodetector performance also in terms of the detection speed (0.061 s/0.074 s for the FO, 0.048 s/0.060 s for the EO compared to 0.10 s/0.16 s for the RO, for the rise and decay time constants, respectively) and the detectivity (1.7 × 1010, 2.3 × 1011, and 7.5 × 1011 Jones for the FO, EO, and RO devices, respectively) which can be further tailored for the desired optoelectronic device applications. Attributed to charge transportation in colloidal films being proportional to the number of hopping steps, these findings indicate that the solution-processed orientation of CQWs provides the ability to tune the photoconductivity of CQWs with short ligands as another degree of freedom to exploit and engineer their absorptive devices.

Advancing Detectivity and Stability of Near-Infrared Organic Photodetectors via a Facile and Efficient Cathode Interlayer

Near-infrared (NIR) organic photodetectors (OPDs) are pivotal in numerous technological applications due to their excellent responsivity within the NIR region. Polyethylenimine ethoxylated (PEIE) has conventionally been employed as an electron transport layer (hole-blocking layer) to suppress dark current (JD) and enhance charge transport. However, the limitations of PEIE in chemical stability, processing conditions, environmental impact, and absorption range have spurred the development of alternative materials. In this study, we introduced a novel solution: a hybrid of sol-gel zinc oxide (ZnO) and N,N'-bis(N,N-dimethylpropan-1-amine oxide)perylene-3,4,9,10-tetracarboxylic diimide (PDINO) as the electron transport layer for NIR-OPDs. Our fabricated OPD exhibited significantly improved responsivity, reduced internal traps, and enhanced charge transfer efficiency. The detectivity, spanning from 400 to 1100 nm, surpassed ∼5 × 1012 Jones, reaching ∼1.1 × 1012 Jones at 1000 nm, accompanied by an increased responsivity of 0.47 A/W. Also, the unpackaged OPD remarkedly demonstrated stable JD and external quantum efficiency (EQE) over 1000 h under dark storage conditions. This innovative approach not only addresses the drawbacks of conventional PEIE-based OPDs but also offers promising avenues for the development of high-performance OPDs in the future.

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS2) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

The domain related to the use of renewable energy is showing high interest among the researchers in the current days, and light energy can be considered as one of such. Solar cells are the kind of devices that use light energy in an efficient way to generate electricity. Hence, designing and developing a solar cell requires meticulous attention to get an optimum output. This work focuses on designing and optimization of aluminum dope ZnO/phenyl-C-butyric acid methyl ester/tungsten disulfide (AZO/PCBM/WS2) heterojunction-based device for applications in solar cells. Moreover, considering the high demand of optoelectronics like photodetectors, this work also uncovers the capabilities of the device in the applications of broadband self-powered photodetectors. The optimized values of several parameters of the device such as the thickness and doping density of the WS2 layer, the defect density of the WS2 layer, and the interface PCBM/WS2 were 2 μm, 1017 cm-3, 1014 cm-3, and 1010 cm-2, respectively. These optimal conditions facilitated in obtaining fill factor and efficiency values of 84.78 and 23.92%, respectively. Further, the photodetection performance was evaluated with the parameters like responsivity and detectivity. The maximum calculated responsivity of the device at 0 V bias was 0.63 A/W at 880 nm, whereas the maximum detectivity was 1.54 × 1013 Jones. This study also extensively focuses on the in-depth understanding of the physics associated with the movement of the charge carriers under the illuminated conditions by studying the band diagrams and the electric fields of the heterojunctions at various conditions.

Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C60/C70:TAPC Hybrid Channel

Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C60 layer and a bulk-heterojunction layer of C70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C60 layer serves as the main carrier-transporting layer with high mobility, the C70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.

Organic photodiodes with bias-switchable photomultiplication and photovoltaic modes

The limited sensitivity of photovoltaic-type photodiodes makes it indispensable to use pre-amplifier circuits for effectively extracting electrical signals, especially when detecting dim light. Additionally, the photomultiplication photodiodes with light amplification function suffer from potential damages caused by high power consumption under strong light. In this work, by adopting the synergy strategy of thermal-induced interfacial structural traps and blocking layers, we develop a dual-mode visible-near infrared organic photodiode with bias-switchable photomultiplication and photovoltaic operating modes, exhibiting high specific detectivity (~1012 Jones) and fast response speed (0.05/3.03 ms for photomultiplication-mode; 8.64/11.14 μs for photovoltaic-mode). The device also delivers disparate external quantum efficiency in two optional operating modes, showing potential in simultaneously detecting dim and strong light ranging from ~10-9 to 10-1 W cm-2. The general strategy and working mechanism are validated in different organic layers. This work offers an attractive option to develop bias-switchable multi-mode organic photodetectors for various application scenarios.

The State-of-the-Art Solution-Processed Single Component Organic Photodetectors Achieved by Strong Quenching of Intermolecular Emissive State and High Quadrupole Moment in Non-Fullerene Acceptors

A bulk-heterojunction (BHJ) blend is commonly used as the photoactive layer in organic photodetectors (OPDs) to utilize the donor (D)/acceptor (A) interfacial energetic offset for exciton dissociation. However, this strategy often complicates optimization procedures, raising serious concerns over device processability, reproducibility, and stability. Herein, highly efficient OPDs fabricated with single-component organic semiconductors are demonstrated via solution-processing. The non-fullerene acceptors (NFAs) with strong intrinsic D/A character are used as the photoactive layer, where the emissive intermolecular charge transfer excitonic (CTE) states are formed within <1 ps, and efficient photocurrent generation is achieved via strong quenching of these CTE states by reverse bias. Y6 and IT-4F-based OPDs show excellent OPD performances, low dark current density (≈10-9 A cm-2 ), high responsivity (≥0.15 A W-1 ), high specific detectivity (>1012 Jones), and fast photo-response time (<10 µs), comparable to the state-of-the-art BHJ OPDs. Together with strong CTE state quenching by electric field, these excellent OPD performances are also attributed to the high quadrupole moments of NFA molecules, which can lead to large interfacial energetic offset for efficient CTE dissociation. This work opens a new way to realize efficient OPDs using single-component systems via solution-processing and provides important molecular design rules.

Interface-Engineered Organic Near-Infrared Photodetector for Imaging Applications

We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on a silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). In-depth understanding of the origin of dark current is obtained using an elaborate set of characterization techniques, including temperature-dependent current-voltage measurements, current-based deep-level transient spectroscopy (Q-DLTS), and transient photovoltage decay measurements. These characterization results are complemented by energy band structures deduced from ultraviolet photoelectron spectroscopy. The presence of trap states and a strong dependency of activation energy on the applied reverse bias voltage point to a dark current mechanism based on trap-assisted field-enhanced thermal emission (Poole-Frenkel emission). We significantly reduce this emission by introducing a thin interfacial layer between the donor: acceptor blend and the a-IGZO ETL and obtain a dark current as low as 125 pA/cm² at an applied reverse bias of -1 V. Thanks to the use of high-mobility metal-oxide transport layers, a fast photo response time of 639 ns (rise) and 1497 ns (fall) is achieved, which, to the best of our knowledge, is among the fastest reported for NIR OPDs. Finally, we present an imager integrating the NIR OPD on a complementary metal oxide semiconductor read-out circuit, demonstrating the significance of the improved dark current characteristics in capturing high-quality sample images with this technology.

Origins of the Photocurrent Multiplication Effect in the Polythiophene-Based Photodetectors

The photocurrent multiplication (PM) effect has been used to boost the device performance of polymer-based photodetectors (PDs), but its origin is rarely addressed. In this study, the origins of the PM effect in polymer PDs based on the P3HT:PC₇₁ BM bulk heterojunction (BHJ) composite thin film, where P3HT is poly(3-hexylthiophene), and PC₇₁ BM is [6,6]phenyl-C₇₁ -butyric acid methyl ester, through both computational simulation and experimental investigation are reported. Systematic studies indicate that two key factors play an important role in the realization of the PM effect in polymer PDs. One factor is the work function of the metal electrode, and the other is the PC₇₁ BM aggregations at the interface between the P3HT:PC₇₁ BM BHJ composite thin film and the metal electrode. Moreover, the results from both experimental and computational simulation indicate that the values of the current density under light illumination minus the current density in the dark of polymer PDs are increased simultaneously along with the reduction of the thickness of the P3HT:PC₇₁ BM BHJ composite thin film. The results provide an understanding of the PM effect in polymer PDs and guidance for the development of high-performance polymer PDs based on BHJ composite thin film.

Broadband Organic Ternary Bulk Heterojunctions Photodetector Based on Non-Fullerene Acceptor with Enhanced Flat-Spectrum Response Range from 200 to 1100 nm

Both flat-spectrum responsivity and high external quantum efficiency (EQE) of bulk heterojunction organic photodetectors (BHJ OPDs) are greatly in demand and still challenging to realize from the ultraviolet (UV) to near-infrared (NIR) regions. In this article, conjugated polymer donor poly(3-hexylthiophene) (P3HT) and PTB7-Th are blended with a low band gap nonfullerene acceptor (NFA) IEICO-4F to form a ternary BHJ active layer, thereby forming a BHJ OPD with a broadband responsivity spectrum from UV to visible light to NIR region (200-1100 nm). Under 6 V voltage and in the range from 280 to 810 nm, the ternary BHJ OPD shows a relatively flat responsivity spectrum, and the highest responsivity is 1.348 A/W, which is 1.34 times that of the binary BHJ OPD. Specifically, the ternary BHJ OPD achieved the highest EQE at 285 nm and as high as 449.31%. In addition, the ternary OPD detectivity (D*) is 2.65 times that of the binary BHJ OPD. Therefore, ternary BHJ as an active layer provides an effective method to develop BHJ OPDs with an expanded response range, higher responsivity, improved EQE, and broadband spectrum with flat spectral response from the UV to NIR region.

Impact of the Channel Thickness on the Photoresponse of Black Arsenic Mid-Infrared Photodetectors

Recently explored black arsenic is a layered two-dimensional low-symmetry semiconducting material that, owing to its inherent narrow bandgap (∼0.31 eV) in its bulk form, is attractive for mid-infrared optoelectronics. Several studies have been conducted on its structural, charge-transport, and thermal properties for implementation in nanoelectronics. Herein, the thickness-dependent optoelectronic performance of black arsenic devices for mid-infrared wavelengths (2.0-4.0 μm) is investigated. The device was fabricated over an hBN/SiO2/Si substrate using mechanical exfoliation of black arsenic. It is observed that the optoelectronic properties of the devices vary significantly with the thickness of the black arsenic channel of the devices. A peak photoresponsivity of 244 A/W was achieved at 3.00 μm for a 60 nm-thick black arsenic channel. However, the maximum detectivity of 6.14 × 109 Jones was found for a lower thickness (∼25 nm) of black arsenic, along with an excellent (i.e., the least) noise-equivalent power of ∼89 fW/Hz1/2. Our findings reveal that the optoelectronic properties of black arsenic are excellent and can be tuned through thickness control. The promising results suggest the considerable potential of black arsenic in future opto- and nanoelectronic devices.

A Molecular-Switch-Embedded Organic Photodiode for Capturing Images against Strong Backlight

When the intensity of the incident light increases, the photocurrents of organic photodiodes (OPDs) exhibit relatively early saturation, due to which OPDs cannot easily detect objects against strong backlights, such as sunlight. In this study, this problem is addressed by introducing a light-intensity-dependent transition of the operation mode, such that the operation mode of the OPD autonomously changes to overcome early photocurrent saturation as the incident light intensity passes the threshold intensity. The photoactive layer is doped with a strategically designed and synthesized molecular switch, 1,2-bis-(2-methyl-5-(4-cyanobiphenyl)-3-thienyl)tetrafluorobenzene (DAB). The proposed OPD exhibits a typical OPD performance with an external quantum efficiency (EQE) of <100% and a photomultiplication behavior with an EQE of >100% under low-intensity and high-intensity light illuminations, respectively, thereby resulting in an extension of the photoresponse linearity to a light intensity of 434 mW cm^-2 . This unique and reversible transition of the operation mode can be explained by the unbalanced quantum yield of photocyclization/photocycloreversion of the molecular switch. The details of the operation mechanism are discussed in conjunction with various photophysical analyses. Furthermore, they establish a prototype image sensor with an array of molecular-switch-embedded OPD pixels to demonstrate their extremely high sensitivity against strong light illumination.

Photomultiplication-Type Organic Photodetectors for Near-Infrared Sensing with High and Bias-Independent Specific Detectivity

Highly responsive organic photodetectors allow a plethora of applications in fields like imaging, health, security monitoring, etc. Photomultiplication-type organic photodetectors (PM-OPDs) are a desirable option due to their internal amplification mechanism. However, for such devices, significant gain and low dark currents are often mutually excluded since large operation voltages often induce high shot noise. Here, a fully vacuum-processed PM-OPD is demonstrated using trap-assisted electron injection in BDP-OMe:C₆₀ material system. By applying only -1 V, compared with the self-powered working condition, the responsivity is increased by one order of magnitude, resulting in an outstanding specific detectivity of ≈10¹³  Jones. Remarkably, the superior detectivity in the near-infrared region is stable and almost voltage-independent up to -10 V. Compared with two photovoltaic-type photodetectors, these PM-OPDs exhibit the great potential to be easily integrated with state-of-the-art readout electronics in terms of their high responsivity, fast response speed, and bias-independent specific detectivity. The employed vacuum fabrication process and the easy-to-adapt PM-OPD concept enable seamless upscaling of production, paving the way to a commercially relevant photodetector technology.

Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing

Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.

Surmounting the interband threshold limit by the hot electron excitation of multi-metallic plasmonic AgAuCu NPs for UV photodetector application

Sharply improved photoresponse characteristics are demonstrated by the multi-metallic AgCu, AuCu and AgAuCu NP based UV-PDs through the superior photo carrier injection by the strong elemental composition-dependent hot electrons and localized surface plasmon resonance (LSPR).

Interfacial Electrostatic-Interaction-Enhanced Photomultiplication for Ultrahigh External Quantum Efficiency of Organic Photodiodes

A photomultiplication-type organic photodiode (PM-OPD), where an electric double layer (EDL) is strategically embedded, is demonstrated, with an exceptionally high external quantum efficiency (EQE) of 2 210 000%, responsivity of 11 200 A W^-1 , specific detectivity of 2.11 × 10¹⁴ Jones, and gain-bandwidth product of 1.92 × 10⁷  Hz, as well as high reproducibility. A polymer electrolyte, poly(9,9-bis(3'-(N,N-dimethyl)-N-ethylammoinium-propyl-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene))dibromide is employed as a work-function-modifying layer of indium tin oxide (ITO) to construct an EDL-embedded Schottky junction with p-type polymer semiconductor, poly(3-hexylthiophene-diyl), resulting in not only advantageous tuning of the work function of ITO but also an enhancement of the electron-trapping efficiency due to electrostatic interaction between exposed cations and trapped electrons within isolated acceptor domains. The effects of the EDL on the energetics of the trapped electron states and thus on the gain generation mechanism are confirmed by numerical simulations based on the drift-diffusion approximation of charge carriers. The feasibility of the fabricated high-EQE PM-OPD especially for weak light detection is demonstrated via a pixelated prototype image sensor. It is believed that this new OPD platform opens up the possibility for the ultrahigh-sensitivity organic image sensors, while maintaining the advantageous properties of organics.

Synergetic contribution of fluorinated azide for high EQE and operational stability of top-illuminated, semitransparent, photomultiplication-type organic photodiodes

In this study, it is shown that fluorinated azide, employed as a functional additive to photomultiplication-type organic photodiodes (PM-OPDs), can not only enhance the operational stability by freezing the morphology consisting of matrix polymer/localized acceptor but also stabilize the trapped electron states such that the photomultiplication mechanism can be accelerated further, leading to exceptionally high external quantum efficiency (EQE). The consequent semitransparent OPD consisting of molybdenum oxide (MoO₃)/Au/MoO₃/photoactive layer/polyethyleneimine ethoxylated/indium tin oxide (ITO) rendered a maximum EQE of over 500 000% and 370 000% under bottom and top illumination, respectively. Owing to the remarkably high EQE, high specific detectivity of 5.6 × 10¹³ Jones and low noise-equivalent power of 5.35 × 10^-15 W Hz^-0.5 were also demonstrated. Furthermore, the OPD demonstrated stable performance during 20 h of continuous operation and minimal performance degradation even after the damp heat test. To fully visualize the advantages of the proposed high-EQE, top-illuminated, semitransparent OPD with spectral asymmetry between absorption and detection, a reflection-type fingerprint platform consisting of 1 OPD-1 oxide field-effect transistor complementary metal-oxide-semiconductor backplane (300 ppi) is designed and fabricated. The successful recognition of the fingerprint of one of the authors is demonstrated, which indicates the feasibility of the proposed PM-OPD for sensing weak light intensity.

Enhancing sub-bandgap external quantum efficiency by photomultiplication for narrowband organic near-infrared photodetectors

Detection of electromagnetic signals for applications such as health, product quality monitoring or astronomy requires highly responsive and wavelength selective devices. Photomultiplication-type organic photodetectors have been shown to achieve high quantum efficiencies mainly in the visible range. Much less research has been focused on realizing near-infrared narrowband devices. Here, we demonstrate fully vacuum-processed narrow- and broadband photomultiplication-type organic photodetectors. Devices are based on enhanced hole injection leading to a maximum external quantum efficiency of almost 2000% at -10 V for the broadband device. The photomultiplicative effect is also observed in the charge-transfer state absorption region. By making use of an optical cavity device architecture, we enhance the charge-transfer response and demonstrate a wavelength tunable narrowband photomultiplication-type organic photodetector with external quantum efficiencies superior to those of pin-devices. The presented concept can further improve the performance of photodetectors based on the absorption of charge-transfer states, which were so far limited by the low external quantum efficiency provided by these devices.

Effective film surface treatment for improving external quantum efficiency of photomultiplication type organic photodetector

A simple yet effective method based on methanol treatment is proposed to enhance the external quantum efficiency (EQE) of the photomultiplication type organic photodetector with a structure of Glass/ITO/PEDOT:PSS/P3H:PC71BM (100:1, wt./wt.)/Al. By modifying the PEDOT:PSS film surface with methanol, the EQE of photodetector significantly improved within a broad wavelength range of 300–700 nm. The maximum EQE of 25300% occurs at the wavelength of 350 nm in the methanol-treated device under −9 V bias, which more than doubles that (11500%) of the device without treatment. In addition, as a result of the methanol treatment, the detectivity of the device improved from 3.72 × 1012 to 7.24 × 1012 Jones at −9 V under 350 nm light illumination. The large improvement is attributed to the fact that the methanol treatment can improve the electrical performance of the PEDOT:PSS by removing the insulator PSS within the film and also result in PC71BM aggregations in the active layer. The latter can enhance the tunneling hole injection by the intensified energy-level bending, which is induced by both the trapped electrons in these aggregations and accumulated ones near Al electrode. As a result, the modification of both the PEDOT:PSS layer and the active layer increases the response current, resulting in the EQE improvement.

Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation

Although solution-processed Cu(In,Ga)(S,Se)₂ (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work, we present a near-infrared photodetector functioning at 980 nm based on solution-processed CIGS with a potassium-induced bandgap grading structure and chalcopyrite grain growth. The incorporation of potassium in the CIGS film promotes Se uptake in the bulk of the film during the chalcogenization process, resulting in a bandgap grading structure with a wide space charge region that allows improved light absorption in the near-infrared region and charge carrier separation. Also, increasing the Se penetration in the potassium-incorporated CIGS film leads to the enhancement of chalcopyrite crystalline grain growth, increasing charge carrier mobility. Under the reverse bias condition, associated with hole tunneling from the ZnO interlayer, the increasing carrier mobility of potassium-incorporated CIGS photodetector improved photosensitivity and particularly external quantum efficiency more than 100% at low light intensity. The responsivity and detectivity of the potassium-incorporated CIGS photodetector reach 1.87 A W^-1 and 6.45 [Formula: see text] 10¹⁰ Jones, respectively, and the - 3 dB bandwidth of the device extends to 10.5 kHz under 980 nm near-infrared light.

Dual functional modes for nanostructured p-Cu2O/n-Si heterojunction photodiodes

Many applications require a photodetector (PD) with multiple functional modes. This study demonstrates a dual functional PD with a simple structure that uses a nanostructured p-Cu₂O/n-Si heterojunction. This device features a self-powering characteristic for an open-circuit voltage (V _oc) of 0.5 V and exhibits an external quantum efficiency (EQE) of 3780% at a reverse bias of -5 V. There is a high EQE at low reverse-bias because trapped holes cause charge to be injected from the electrode. The nanostructured p-Cu₂O/n-Si heterojunction also has a high response speed (<10 ms) in the self-powered mode because there is a built-in potential within p-n junction. This study shows that a nanostructured p-Cu₂O/n-Si heterojunction acts as a self-powered PD for reducing power consumption and as a photomultiplication (PM)-type PD with high internal gain.

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = - 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW-1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W-1, and the noise equivalent power (NEP) of 1.22 × 10-13 WHz-1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.

Broadband photomultiplication organic photodetectors

Broadband photomultiplication organic photodetectors (PMOPDs) can be achieved with a double-layered active layer prepared from IEICO-4F : PBDB-T blend solutions with different weight ratios (1 : 1 or 3 : 100, wt/wt). The response range of the double-layered PMOPDs covers from 310 nm to 930 nm, determined by the photon harvesting range of the IEICO-4F : PBDB-T (1 : 1, wt/wt) layer. The IEICO-4F : PBDB-T (3 : 100, wt/wt) layer was used as a PM layer in the double-layered PMOPDs, achieving external quantum efficiency (EQE) more than 100% based on the work mechanism of trap-assisted hole tunneling injection. The trapped electrons in PBDB-T/IEICO-4F/PBDB-T near the Al electrode will makeinterfacial-band-bending to narrow the injection barrier, resulting in hole-tunneling-injection from the external circuit. The polymer PBDB-T can provide an efficient charge transport channel for the injected hole from the external circuit. The specific detectivity (D*) and responsivity (R) of the double-layered PMOPDs are 1.05 ± 0.03 × 1012 Jones and 0.94 ± 0.03 A W-1 at 810 nm under a -10 V bias, respectively.

Organic Photodetectors for Next-Generation Wearable Electronics

Next-generation wearable electronics will need to be mechanically flexible and stretchable such that they can be conformally attached onto the human body. Photodetectors that are available in today's market are based on rigid inorganic crystalline materials and they have limited mechanical flexibility. In contrast, photodetectors based on organic polymers and molecules have emerged as promising alternatives due to their inherent mechanical softness, ease of processing, tunable optoelectronic properties, good light sensing performance, and biocompatibility. Here, the recent advances of organic photodetectors in terms of both optoelectronic and mechanical properties are outlined and discussed, and their application in wearable electronics including health monitoring sensors, artificial vision, and self-powering integrated devices are highlighted.

Photomultiplication Type Broad Response Organic Photodetectors with One Absorber Layer and One Multiplication Layer

Broad response organic photodetectors (OPDs) with a photomultiplication (PM) effect are achieved with one absorber layer and one multiplication layer. The response range of the PM-OPDs is primarily determined by materials in the absorber layer, and the external quantum efficiency (EQE) of the PM-OPDs is mainly controlled by the multiplication layer. Here, double-layered PM-OPDs were designed with an ITO/ZnO/PM6:Y6/PC₇₁BM:P3HT (100:5, w/w)/Au structure, where PM6:Y6 is employed as an absorber layer and PC₇₁BM:P3HT is used as a multiplication layer. The optimal PM-OPDs exhibit a broad response covering 350-950 nm. Meanwhile, the optimal PM-OPDs exhibit the largest EQE value of ∼1200% and a maximum specific detectivity (D*) of ∼6.8 × 10^-12 cm Hz^1/2 W^-1 under a 10 V bias. This double-layered approach may be a smart strategy for realizing PM-OPDs with an easily adjustable response range.

Photomultiplication type organic photodetectors based on electron tunneling injection

Photomultiplication (PM) type organic photodetectors (OPDs) based on electron tunneling injection are achieved with a specific structure of ITO/ZnO/PC₇₁BM:P3HT (100 : 5, wt/wt)/Au and can work well under forward and reverse bias. A rather low dark current density of the PM type OPDs is obtained due to the large electron injection barrier of 0.7 eV from the ITO electrode or 1.1 eV from the Au electrode, as well as the absence of continuous hole transport channels in the active layers. The external quantum efficiency (EQE) spectral shape of PM type OPDs can be easily adjusted by altering the bias polarity and active layer thickness, which can be well explained by the trapped hole distribution near the ITO and Au electrodes, respectively. The PM type OPDs with 400 nm active layers exhibit the maximum EQE of 3900% and 4900% under 5 V and -5 V bias, respectively. This work firstly achieves PM type OPDs with electron-only transport properties, which has great potential to well match with other organic electronic devices.

Near-infrared and visible light dual-mode organic photodetectors

We report a dual-mode organic photodetector (OPD) that has a trilayer visible light absorber/optical spacer/near-infrared (NIR) light absorber configuration. In the presence of NIR light, photocurrent is produced in the NIR light-absorbing layer due to the trap-assisted charge injection at the organic/cathode interface at a reverse bias. In the presence of visible light, photocurrent is produced in the visible light-absorbing layer, enabled by the trap-assisted charge injection at the anode/organic interface at a forward bias. A high responsivity of >10 A/W is obtained in both short and long wavelengths. The dual-mode OPD exhibits an NIR light response operated at a reverse bias and a visible light response operated at a forward bias, with a high specific detectivity of ~10¹³ Jones in both NIR and visible light ranges. A bias-switchable spectral response OPD offers an attractive option for applications in environmental pollution detection, bioimaging process, wellness, and security monitoring in two distinct bands.

Low-gap zinc porphyrin as an efficient dopant for photomultiplication type photodetectors

A porphyrin molecule, Por4IC, facilitates a photomultiplication effect in blend with P3HT, giving rise to a high external quantum efficiency of 22 182% and a specific detectivity of 4.4 × 10¹² Jones at 355 nm and at −15 V bias.

Recent Progress in Organic Photodetectors and their Applications

Organic photodetectors (OPDs) have attracted continuous attention due to their outstanding advantages, such as tunability of detecting wavelength, low-cost manufacturing, compatibility with lightweight and flexible devices, as well as ease of processing. Enormous efforts on performance improvement and application of OPDs have been devoted in the past decades. In this Review, recent advances in device architectures and operation mechanisms of phototransistor, photoconductor, and photodiode based OPDs are reviewed with a focus on the strategies aiming at performance improvement. The application of OPDs in spectrally selective detection, wearable devices, and integrated optoelectronics are also discussed. Furthermore, some future prospects on the research challenges and new opportunities of OPDs are covered.

Graphene Sandwich Stable Perovskite Quantum-Dot Light-Emissive Ultrasensitive and Ultrafast Broadband Vertical Phototransistors

Dual-functional devices that can simultaneously detect light and emit light have a tremendous appeal for multiple applications, including displays, sensors, defense, and high-speed optical communication. Despite the tremendous efforts of scientists, the progress of integration of a phototransistor, where the built-in electric field separates the photogenerated excitons, and a light-emitting diode, where the radiative recombination can be enhanced by band offset, into a single device remains a challenge. Combining the superior properties of perovskite quantum dots (PQDs) and graphene, here we report a light-emissive, ultrasensitive, ultrafast, and broadband vertical phototransistor that can simultaneously act as an efficient photodetector and light emitter within a single device. The estimated value of the external quantum efficiency of the vertical phototransistor is ∼1.2 × 10¹⁰% with a photoresponsivity of >10⁹ A W^-1 and a response time of <50 μs, which exceed all the presently reported vertical phototransistor devices. We also demonstrate that the modulation of the Dirac point of graphene efficiently tunes both amplitude and polarity of the photocurrent. The device exhibits a green emission having a quantum efficiency of 5.6%. The moisture-insensitive and environmentally stable, light-emissive, ultrafast, and ultrasensitive broadband phototransistor creates a useful route for dual-functional optoelectronic devices.

A Highly Responsive Organic Image Sensor Based on a Two-Terminal Organic Photodetector with Photomultiplication

Highly responsive organic image sensors are crucial for medical imaging applications. To enhance the pixelwise photoresponse in an organic image sensor, the integration of an organic photodetector with amplifiers, or the use of a highly responsive organic photodetector without an additional amplifying component, is required. The use of vertically stacked, two-terminal organic photodetectors with photomultiplication is a promising approach for highly responsive organic image sensors owing to their simple two-terminal structure and intrinsically large responsivity. However, there are no demonstrations of an imaging sensor array using organic photomultiplication photodetectors. The main obstacle to a sensor array is the weak-light sensitivity, which is limited by a relatively large dark current. Herein, a highly responsive organic image sensor based on monolithic, vertically stacked two-terminal pixels is presented. This is achieved using pixels of a vertically stacked diode-type organic photodetector with photomultiplication. Furthermore, applying an optimized injection electrode and additionally stacked rectifying layers, this two-terminal device simultaneously demonstrates a high responsivity (>40 A W^-1 ), low dark current, and high rectification under illumination. An organic image sensor based on this device with an extremely simple architecture exhibits a high pixel photoresponse, demonstrating a weak-light imaging capability even at 1 µW cm^-2 .

Acceptor-free photomultiplication-type organic photodetectors

A series of organic photodetectors (OPDs) is prepared with two donor materials as active layers, with the only difference being the weight ratio of the two donors (one polymer and one small molecule). The OPDs work according to a photodiode model with an external quantum efficiency (EQE) of less than 10% at -10 V when the weight ratio of the two materials is 1 : 1 (wt/wt). The EQE of an OPD with P3HT:DRCN5T (100 : 2, wt/wt) as the active layer reaches 1400% at -10 V, exhibiting the photomultiplication (PM) phenomenon. The EQE values of PM-type OPDs can be markedly improved along with a bias increase, and the champion EQE reaches 10 600% at -20 V. The small number of small molecules can be used as electron traps due to the different lowest unoccupied molecular orbital (LUMO) levels of the two donors, and photogenerated electrons can be trapped in the small molecules surrounded by P3HT. The trapped electrons near the Al electrode can induce interfacial band bending for efficient hole tunneling injection from an external circuit. This work provides a new strategy for realizing acceptor-free PM-type OPDs, which may inspire us to further develop organic electronic devices with single type organic semiconducting materials.

High-Performance Photomultiplication Photodiode with a 70 nm-Thick Active Layer Assisted by IDIC as an Efficient Molecular Sensitizer

Here, a smart strategy for decreasing the active layer thickness of the organic photodiode down to 70 nm is demonstrated by utilizing a trap-assisted photomultiplication mechanism with the optimized chemical composition. Despite the presence of a high dark current, dramatically enhanced external quantum efficiency (EQE) via photomultiplication can allow significantly reduced active layer thickness, yielding high detectivity comparable to that of conventional Si. To achieve this, a spatially confined and electrically isolated optical sensitizer, 2,2'-((2 Z,2' Z)-((4,4,9,9-tetrahexyl-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-2,7-diyl)bis(methanylylidene))bis(3-oxo-2,3-dihydro-1 H-indene-2,1-diylidene))dimalononitrile (IDIC) was introduced strategically between a hole transport active layer and a cathode. A nonfullerene acceptor, IDIC, turned out to be a much more efficient sensitizer than the conventional fullerene-based acceptors, as confirmed by the effective lowering of the Schottky barrier under illumination, as well as the highest EQE exceeding 130 000%. Due to its favorable electronic structure as well as two-dimensional molecular structure, a high detectivity over 10¹² Jones was successfully demonstrated while maintaining the active layer thickness as 70 nm.

Multistacked Detectors with Transparency-Controlled Polymer:Nonfullerene Bulk Heterojunction Sensing Layers for Visible Light Communications

Here, we report multistacked organic photodiodes (OPDs) for potential light-fidelity (Li-Fi) detectors in visible light communications. The multistacked detectors were fabricated by integrating semitransparent inverted-type OPDs with polymer:nonfullerene bulk heterojunction (BHJ) layers. The thickness of BHJ sensing layers in the inverted-type OPDs was controlled to 30, 60, and 100 nm for top, middle, and bottom cells in the multistacked detectors, respectively, while 30 nm thick metal (silver) electrodes were used for securing both electrical conductivity and optical transparency. Results showed that each OPD cell in the multistacked detectors could deliver exact current signals upon illumination with a modulated white light from inorganic light-emitting diode lamp. The current signal from each OPD cell was linearly decreased as the modulation frequency of white light increased, supporting a stable operation of the multistacked detectors. Finally, the present multistacked detectors were able to exactly detect the programmed Li-Fi signals with a particular digitized information.

Recent advances with optical upconverters made from all-organic and hybrid materials

The growing interest in near-infrared (NIR) imaging is explained by the increasing number of applications in this spectral range, which includes process monitoring and medical imaging. NIR-to-visible optical upconverters made by integrating a NIR photosensitive unit with a visible emitting unit convert incident NIR light to visible light, allowing imaging of a NIR scene directly with the naked eye. Optical upconverters made entirely from organic and hybrid materials - which include colloidal quantum dots, and metal-halide perovskites - enable low-cost and pixel-free NIR imaging. These devices have emerged as a promising addition to current NIR imagers based on inorganic semiconductor photodiode arrays interconnected with read-out integrated circuitry. Here, we review the recent progress in the field of optical upconverters made from organic and hybrid materials, explain their functionality and characterization, and identify open challenges and opportunities.

Narrowband Ultraviolet Photodetectors Based on Nanocomposite Thin Films with High Gain and Low Driving Voltage

Narrowband ultraviolet (UV) photodetectors are highly desired in multiple areas. Photodetectors based on organic-inorganic nanocomposites offer high sensitivity, widely adjustable response range, light weight, and low-temperature solution processibility. However, the broad absorption range of organic and inorganic semiconductor materials makes it difficult to achieve a narrowband detection feature for nanocomposite photodetectors. In this work, nanocomposite thin films containing the wide band gap conjugated polymer poly[(9,9-dioctylfluorenyl-2,7-diyl)- alt- co-(bithiophene)] (F8T2) blended with wide band gap ZnO nanoparticles (NPs) serve as the active layers of the photodetectors. Narrowband UV photodetectors with high gain and low driving voltage are demonstrated by adopting a symmetric device structure, controlling the active layer composition and microstructure, and manipulating the light penetration depth in the active layer. The fabricated photodetector exhibits a high external quantum efficiency of 782% at 358 nm under a low forward bias of 3 V with the full-width at half-maximum of 16 nm. Combined with a low dark current, a high specific detectivity of 8.45 × 10¹² Jones is achieved. The impacts of the F8T2:ZnO NPs weight ratio and the device structure on the UV-selectivity and the device performance are investigated and discussed. Our method offers a pathway to design and fabricate narrowband UV photodetectors.

Research Progress in Organic Photomultiplication Photodetectors

Organic photomultiplication photodetectors have attracted considerable research interest due to their extremely high external quantum efficiency and corresponding high detectivity. Significant progress has been made in the aspects of their structural design and performance improvement in the past few years. There are two types of organic photomultiplication photodetectors, which are made of organic small molecular compounds and polymers. In this paper, the research progress in each type of organic photomultiplication photodetectors based on the trap assisted carrier tunneling effect is reviewed in detail. In addition, other mechanisms for the photomultiplication processes in organic devices are introduced. Finally, the paper is summarized and the prospects of future research into organic photomultiplication photodetectors are discussed.

Flexible Narrowband Ultraviolet Photodetectors with Photomultiplication Based on Wide Band Gap Conjugated Polymer and Inorganic Nanoparticles

Lightweight and flexible ultraviolet (UV) photodetectors (PDs) have wide applications and have attracted more attention. PDs using organic and inorganic nanocomposites as active layers with a photodiode configuration could achieve photomultiplication and narrowband photoresponse via the control of microstructure and thickness of active layers. Here, we fabricated flexible UV PDs on indium tin oxide-coated poly(ethylene terephthalate) substrates with a nanocomposite active layer composed of ZnO nanoparticles blended with a wide band gap conjugated polymer, poly[(9,9-dioctylfluorenyl-2,7-diyl)- alt- co-(bithiophene)] (F8T2). As a result of the wavelength-dependent penetration depth of light in the active layer, the fabricated flexible UV PDs showed two narrow response peaks at 360 and 510 nm under reverse biases in the external quantum efficiency (EQE) spectra with full width at half maximum (FWHM) less than 20 nm. Both responses exhibited greater than 100% EQE, indicating a photomultiplication effect, whereas the UV response at 360 nm was 10 times stronger under -15 V bias. The fabricated flexible UV PDs were bent under both tensile and compressive stress to a curvature of 2.1 cm^-1, each with 50 repetitions. The peak specific detectivity ( D*) only decreased by about 5% in total, the FWHM was well retained below 20 nm and the response speed remained almost constant after two types of bending, demonstrating mechanical flexibility and photoresponse stability of the fabricated flexible UV PDs. The photodiode configuration with nanocomposite active layers offers a promising route to make flexible and conformable narrowband, photomultiplication-type photodetectors for modern applications.

The evolution of artificial light actuators in living systems: from planar to nanostructured interfaces

Artificially enhancing light sensitivity in living cells allows control of neuronal paths or vital functions avoiding the wiring associated with the use of stimulation electrodes. Many possible strategies can be adopted for reaching this goal, including the direct photoexcitation of biological matter, the genetic modification of cells or the use of opto-bio interfaces. In this review we describe different light actuators based on both inorganic and organic semiconductors, from planar abiotic/biotic interfaces to nanoparticles, that allow transduction of a light signal into a signal which in turn affects the biological activity of the hosting system. In particular, we will focus on the application of thiophene-based materials which, thanks to their unique chemical-physical properties, geometrical adaptability, great biocompatibility and stability, have allowed the development of a new generation of fully organic light actuators for in vivo applications.

Enhanced Photoresponse in Metasurface-Integrated Organic Photodetectors

In this work, we experimentally demonstrate metasurface-enhanced photoresponse in organic photodetectors. We have designed and integrated a metasurface with broadband functionality into an organic photodetector, with the goal of significantly increasing the absorption of light and generated photocurrent from 560 up to 690 nm. We discuss how the metasurface can be integrated with the fabrication of an organic photodiode. Our results show large gains in responsivity from 1.5× to 2× between 560 and 690 nm.

High Performance All-Polymer Photodetector Comprising a Donor-Acceptor-Acceptor Structured Indacenodithiophene-Bithieno[3,4-c]Pyrroletetrone Copolymer

The synthesis of an acceptor polymer PIDT-2TPD, comprising indacenodithiophene (IDT) as the electron-rich unit and an interconnected bithieno[3,4-c]pyrrole-4,4',6,6'-tetrone (2TPD) as the electron-deficient unit, and its application for all-polymer photodetectors is reported. The optical, electrochemical, charge transport, and device properties of a blend of poly(3-hexylthiophene) and PIDT-2TPD are studied. The blend shows strong complementary absorption and balanced electron and hole mobility, which are desired properties for a photoactive layer. The device exhibits dark current density in the order of 10^-5 mA/cm², external quantum efficiency broadly above 30%, and nearly planar detectivity over the entire visible spectral range (maximum of 1.1 × 10¹² Jones at 610 nm) under -5 V bias. These results indicate that PIDT-2TPD is a highly functional new type of acceptor and further motivate the use of 2TPD as a building block for other n-type materials.

Columnar-Structured Low-Concentration Donor Molecules in Bulk Heterojunction Organic Solar Cells

We investigate the arrangement of donor molecules in vacuum-deposited bulk heterojunction (BHJ) 1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC):C₇₀-based organic solar cells (OSCs). Even a low dose of donors (∼10%) forms columnar structures that provide pathways for efficient hole transport in the BHJ layer; however, these structures disappear at donor concentrations below 10%, generating disconnected and isolated hole pathways. The formation of columnar donor structures is confirmed by the contrast of the contact potential difference, measured by Kelvin probe force microscopy, and by the trap-assisted charge injection at low donor concentrations. The mobility of electrons and holes is well balanced in OSCs owing to the preservation of the hole mobility at such low donor concentrations, consequently maximizing the internal quantum efficiency of the OSCs. A high power conversion efficiency of 6.24% was achieved in inverted TAPC:C₇₀ (1:9) OSCs.

Three-Phase Morphology Evolution in Sequentially Solution-Processed Polymer Photodetector: Toward Low Dark Current and High Photodetectivity

Sequentially solution-processed polymer photodetectors (SSP PPDs) based on poly(3-hexylthiophene-2,5-diyl) (P3HT)/[6,6]-phenyl C₇₁-butyric acid methyl ester (PC₇₁BM) are fabricated by depositing the top layers of PC₇₁BM from an appropriate cosolvent of 2-chlorophenol (2-CP)/o-dichlorobenzene (ODCB) onto the predeposited bottom layers of P3HT. By adjusting the ratio of 2-CP/ODCB in the top PC₇₁BM layers, the resulting SSP PPD shows a decreased dark current and an increased photocurrent, leading to a maximum detectivity of 1.23 × 10¹² Jones at a wavelength of 550 nm. This value is 5.3-fold higher than that of the conventional bulk heterojunction PPD. Morphology studies reveal that the PC₇₁BM partially penetrates the predeposited P3HT layer during the spin-coating process, resulting in an optimal three-phase morphology with one well-mixed interdiffusion P3HT/PC₇₁BM phase in the middle of the bulk and two pure phases of P3HT and PC₇₁BM at the two electrode sides. We show that the pure phases form high Schottky barriers (>2.0 eV) at the active layer/electrodes interface and efficiently block unfavorable reverse charge carrier injection by significantly decreasing the dark current. The interdiffussion phase enlarges the donor-acceptor interfacial area leading to a large photocurrent. We also reveal that the improved performance of SSP PPDs is also due to the enhanced optical absorption, improved P3HT crystallinity, increased charge carrier mobilities, and suppressed bimolecular recombination.

Spatial Confinement of the Optical Sensitizer to Realize a Thin Film Organic Photodetector with High Detectivity and Thermal Stability

A thin film planar heterojunction organic photodetector (PHJ-OPD) is demonstrated. Different from a conventional sensitizer-doped photodetector, the limited spatial distribution of sensitizer in a PHJ-OPD enables significantly reduced thickness of the active layer without allowing the formation of unnecessary trap sites and electron percolation pathways. As a result, peak external quantum efficiency (EQE) of 120 700% and detectivity over 10¹³ Jones are demonstrated with thin active layer thickness of 150 nm, which can be a significant benefit for high-resolution image sensor application. Furthermore, the operating voltage can be decreased to -5 V while maintaining high detectivity over 10¹² Jones. Remarkable thermal stability is also observed with minor change in detectivity for 2 h of continuous operation at 60 °C due to morphological robustness of PHJ. This work opens up a possibility of using a thin film PHJ-OPD as a key unit of high-resolution image sensor.

Oleylamine-functionalized graphene oxide as an electron block layer towards high-performance and photostable fullerene-free polymer solar cells

Oleylamine-functionalized graphene oxide (GO) has a shallower energy level of conduction band (E_CB) and a deeper energy level of the valence band (E_VB) as compared to common hole extraction layer (HEL) materials, which make the electron block layer (EBL). Photoluminescence, X-ray photoelectron spectroscopy (XPS), and current density-voltage (J-V) curves with a large reverse bias voltage range obtained under dark conditions are used to determine whether GO layers play important roles in blocking the electron transport to the MoO₃/Ag composite anode and prevent MoO₃ diffusion into a photoactive layer under light illumination. Moreover, GO inserted between a photoactive layer and an HEL enhances charge carrier transport and collection and avoids the monomolecular recombination between the photoactive layer and HEL. Photovoltaic parameters and photostability measurements of inverted and forward PSCs have shown that upon introduction of GO, the performance and photostability of PSCs are improved. On adding GO to PSCs, the power conversion efficiency (PCE) increases approximately 5% and 4% and reduces the decay ratio to approximately 50% and 65% of the initial value for the inverted and forward PSCs, respectively.

A Review on Organic-Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics

The last eight years (2009-2017) have seen an explosive growth of interest in organic-inorganic halide perovskites in the research communities of photovoltaics and light-emitting diodes. In addition, recent advancements have demonstrated that this type of perovskite has a great potential in the technology of light-signal detection with a comparable performance to commercially available crystalline Si and III-V photodetectors. The contemporary growth of state-of-the-art multifunctional perovskites in the field of light-signal detection has benefited from its outstanding intrinsic optoelectronic properties, including photoinduced polarization, high drift mobilities, and effective charge collection, which are excellent for this application. Photoactive perovskite semiconductors combine effective light absorption, allowing detection of a wide range of electromagnetic waves from ultraviolet and visible, to the near-infrared region, with low-cost solution processability and good photon yield. This class of semiconductor might empower breakthrough photodetector technology in the field of imaging, optical communications, and biomedical sensing. Therefore, here, the focus is specifically on the critical understanding of materials synthesis, design, and engineering for the next-stage development of perovskite photodetectors and highlighting the current challenges in the field, which need to be further studied in the future.

Transparent and Highly Responsive Phototransistors Based on a Solution-Processed, Nanometers-Thick Active Layer, Embedding a High-Mobility Electron-Transporting Polymer and a Hole-Trapping Molecule

Organic materials are suitable for light sensing devices showing unique features such as low cost, large area, and flexibility. Moreover, transparent photodetectors are interesting for smart interfaces, windows, and display-integrated electronics. The ease of depositing ultrathin organic films with simple techniques enables low light absorbing active layers, resulting in the realization of transparent devices. Here, we demonstrate a strategy to obtain high efficiency organic photodetectors and phototransistors based on transparent active layers with a visible transmittance higher than 90%. The photoactive layer is composed of two phases, each a few nanometers thick. First, an acceptor polymer, which is a good electron-transporting material, on top of which a small molecule donor material is deposited, forming noncontinuous domains. The small molecule phase acts as a trap for holes, thus inducing a high photoconductive gain, resulting in a high photoresponsivity. The organic transparent detectors proposed here can reach very high external quantum efficiency and responsivity values, which in the case of the phototransistors can be as high as ∼74000% and 340 A W^-1 at 570 nm respectively, despite an absorber total thickness below 10 nm. Moreover, frequency dependent 2D photocurrent mapping allows discrimination between the contribution of a fast but inefficient and highly spatially localized photoinduced injection mechanism at the electrodes, and the onset of a slower and spatially extended photoconductive process, leading to high responsivity.

Highly Sensitive and Broadband Organic Photodetectors with Fast Speed Gain and Large Linear Dynamic Range at Low Forward Bias

Photodetectors with high photoelectronic gain generally require a high negative working voltage and a very low environment temperature. They also exhibit low response speed and narrow linear dynamic range (LDR). Here, an organic photodiode is demonstrated, which shows a large amount of photon to electron multiplication at room temperature with highest external quantum efficiency (EQE) from ultraviolet (UV) to near-infrared region of 5.02 × 10³ % (29.55 A W^-1 ) under a very low positive voltage of 1.0 V, accompanied with a fast response speed and a high LDR from 10^-7 to 10¹ mW cm^-2 . At a relatively high positive bias of 10 V, the EQE is up to 1.59 × 10⁵ % (936.05 A W^-1 ). Inversely, no gain is found at negative bias. The gain behavior is exactly similar to a bipolar phototransistor, which is attributed to the photoinduced release of accumulated carriers. The devices at a low voltage exhibit a normalized detectivity (D*) over 10¹⁴ Jones by actual measurements, which is about two or three order of magnitudes higher than that of the highest existing photodetectors. These pave a new way for realization of high sensitive detectors with fast response toward the single photon detection.

Highly Narrowband Photomultiplication Type Organic Photodetectors

Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC₇₁BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at -60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC₇₁BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC₇₁BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window.