High performance broadband photodetector using fabricated nanowires of bismuth selenide

Self-Assembled BiGaSeAs Composite Superlattice-Structured Nanowire for Broad-Band Photodetection

Photodetectors with a broad-band response range are widely used in many fields and are regarded as pivotal components of the modern miniaturized electronics industry. However, commercial broad-band photodetectors composed of traditional bulk semiconductor materials are still limited by complex preparation techniques, high costs, and a lack of mechanical strength and flexibility, which are difficult to satisfy the increasing demand for flexible and wearable optoelectronics. Therefore, researchers have been devoted to finding new strategies to obtain flexible, stable, and high-performance broad-band photodetectors. In this work, a novel self-assembled BiGaSeAs composite superlattice-structured nanowire was developed with a simple chemical vapor deposition method for easy fabrication. After the device assembling, the photodetector showed outstanding performance in terms of obvious Ion/Ioff (13.9), broad-band photoresponse (365-940 nm), excellent responsivity (1007.67 A/W), high detectivity (9.38 × 109 Jones), and rapid response (21 and 23 ms). The formation of microheterojunctions among various materials inside the nanowires also contributed to their extended broad-spectrum response and outstanding detection ability. These results indicate that the BiGaSeAs nanowires have potential applications in the field of flexible and wearable electronics.

Tailoring Bi2Se3 Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Layered semiconductors of the V-VI group have attracted considerable attention in optoelectronic applications owing to their atomically thin structures. They offer thickness-dependent optical and electronic properties, promising ultrafast response time, and high sensitivity. Compared to the bulk, 2D bismuth selenide (Bi2Se3) is recently considered a highly promising material. In this study, 2D nanosheets are synthesized by prolonged sonication in two different solvents, such as N-methyl-2-pyrrolidone (NMP) and chitosan-acetic acid solution (CS-HAc), using the liquid-phase exfoliation (LPE) method. X-ray diffraction confirms the amorphous nature of exfoliated 2D nanosheets with maximum peak intensity at the same position (015) crystal plane as that obtained in its bulk counterpart. SEM confirms the thin 2D nanosheet-like morphology. Successful exfoliation of Bi2Se3 nanosheets up to five layers is achieved using CS-HAc solvent. The as-synthesized 2D nanosheets in different solvents are employed to fabricate the photodetector. At minimum selected power density, the photodetector fabricated using exfoliated ultrathin 2D nanosheets exhibits the highest range of responsivity, varying from 15 to 2.5 mA/W, and detectivity ranging from 2.83 × 109 to 6.37 × 107. Ultrathin 2D Bi2Se3 nanosheets have fast rise and fall times, ranging from 0.01 to 0.12 and 0.01 to 0.06 s, respectively, at different wavelengths. Ultrathin Bi2Se3 nanosheets have improved photodetection parameters as compared to multilayered nanosheets due to the high surface to volume ratio, reduced recombination and trapping of charge carrier, improved carrier confinement, and faster carrier transport due to the thin layer.

Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi-1D Pseudogap System (TaSe4 )2 I

Narrow bandgap materials have garnered significant attention within the field of broadband photodetection. However, the performance is impeded by diminished absorption near the bandgap, resulting in a rapid decline in photoresponsivity within the mid-wave infrared (MWIR) and long-wave infrared (LWIR) regions. Furthermore, they mostly worked in cryogenic temperature. Here, without the assistance of any complex structure and special environment, it is realized high responsivity covering ultra-broadband wavelength range (Ultraviolet (UV) to LWIR) in a single quasi-1D pseudogap (PG) system (TaSe4 )2 I nanoribbon, especially high responsivity (From 23.9 to 8.31 A W-1 ) within MWIR and LWIR region at room temperature (RT). Through direct probing the carrier relaxation process with broadband time-resolved transient absorption spectrum measurement, the underlying mechanism of majorly photoconductive effect is revealed, which causes an increased spectral weight extended to PG region. This work paves the way for realizing high-performance uncooled MWIR and LWIR detection by using quasi-1D PG materials.

A responsive organic probe based photoelectrochemical sensor for hydrazine detection

This study developed a new photoelectrochemical (PEC) sensor for the detection of the hydrazine (N2H4, HZ) based on a donor-π-bridge-acceptor (D-π-A) configuration organic photoactive dye (Dye-HZ). The dye was covalently immobilized on an FTO/TiO2 (FTO: fluorine-doped tin oxide) substrate, resulting in a photoanode FTO/TiO2/Dye-HZ that exhibits a specific PEC response to N2H4. Hydrazine reacts with the acetyl group in the Dye-HZ molecule, leading to its removal and the formation of a hydroxy group. The hydroxy group dissociates a hydrogen ion, forming a phenoxide anion with strong electron-donating characteristics. As a result, the dye molecule exhibits a strong intramolecular charge transfer effect, significantly enhancing absorbance and photoelectric response under visible light irradiation, leading to a remarkable increase in photocurrent and enabling highly sensitive detection of hydrazine. Furthermore, the PEC sensor demonstrates excellent selectivity and can be applied for the detection of hydrazine in real water samples. This study presents an innovative PEC sensing approach for hydrazine based on responsive photoactive molecules, providing new insights for PEC detection of other environmental pollutants.

Controlled synthesis of photoresponsive bismuthinite (Bi2S3) nanostructures mediated through a new 1D bismuth-pyrimidylthiolate coordination polymer as a molecular precursor

Bismuthinite (Bi2S3) nanostructures have garnered significant interest due to their appealing photoresponsivity which has positioned them as an attractive choice for energy conversion applications. However, to utilize their full potential, a simple and economically viable method of preparation is highly desirable. Herein, we present the synthesis and characterization including structural elucidation of a new air- and moisture-stable bismuth-pyrimidylthiolate complex. This complex serves as an efficient single-source molecular precursor for the facile preparation of phase-pure Bi2S3 nanostructures. Powder X-ray diffraction (PXRD), Raman spectroscopy, electron dispersive spectroscopy (EDS) and electron microscopy techniques were used to assess the crystal structure, phase purity, elemental composition and morphology of the as-prepared nanostructures. This study also revealed the profound effects of temperature and growth duration on the crystallinity, phase formation and morphology of nanostructures. The optical band gap of the nanostructures was tuned within the range of 1.9-2.3 eV, which is blue shifted with respect to the bulk bandgap and suitable for photovoltaic applications. Liquid junction photo-electrochemical cells fabricated from the as-prepared Bi2S3 nanostructure exhibit efficient photoresponsivity and good photo-stability, which project them as promising candidates for alternative low-cost photon absorber materials.

Low-Vacuum Catalyst-Free Physical Vapor Deposition and Magnetotransport Properties of Ultrathin Bi2Se3 Nanoribbons

In this work, a simple catalyst-free physical vapor deposition method is optimized by adjusting source material pressure and evaporation time for the reliable obtaining of freestanding nanoribbons with thicknesses below 15 nm. The optimum synthesis temperature, time and pressure were determined for an increased yield of ultrathin Bi2Se3 nanoribbons with thicknesses of 8-15 nm. Physical and electrical characterization of the synthesized Bi2Se3 nanoribbons with thicknesses below 15 nm revealed no degradation of properties of the nanoribbons, as well as the absence of the contribution of trivial bulk charge carriers to the total conductance of the nanoribbons.

Topological quantum devices: a review

The introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.

Nanoscale mapping of edge-state conductivity and charge-trap activity in topological insulators

We report the nanoscale mapping of topological edge-state conductivity and the effects of charge-traps on conductivity in a Bi₂Se₃ multilayer film under ambient conditions. In this strategy, we applied an electric field perpendicular to the surface plane of Bi₂Se₃via a conducting probe to directly map the charge-trap densities and conductivities with a nanoscale resolution. The results showed that edge regions had one-dimensional characteristics with higher conductivities (two orders) and lower charge-trap densities (four orders) than those of flat surface regions where their conductivities and charge-traps were dominated by bulk effects. Additionally, edges showed an enhanced conductivity with an elevated electric field, possibly due to the creation of new topological states by stronger spin-Hall effects. Importantly, we observed ultra-high photoconductivity predominantly on edge regions compared with that of flat surface regions, which was attributed to the excitation of edge-state carriers by light. Since our method provides an important insight into the charge transport in topological insulators, it could be a significant advancement in the development of error-tolerant topotronic devices.

Enhanced photoresponse of Cu2ZnSnS4 absorber thin films fabricated using multi-metallic stacked nanolayers

Cu₂ZnSnS₄ (CZTS) thin films have attracted considerable attention as potential candidates for photovoltaic absorber materials. In a vacuum deposition technique, a sputtering stacked metallic layer followed by a thermal process for sulfur incorporation is used to obtain high-quality CZTS thin films. In this work, for fabricating CZTS thin films, we have done a 3LYS (3 layers), 6LYS, and 9LYS sequential deposition of Sn/ZnS/Cu metal stack (via. metallic stacked nanolayer precursors) onto Mo-coated corning glass substrate via. RF-sputtering. The prepared thin films were sulfurized in a tubular furnace at 550 °C in a gas mixture of 5% H₂S + 95% Ar for 10 min. We further investigated the impact of the Sn/ZnS/Cu metal stacking layers on the quality of the thin film based on its response to light because metal inter-diffusion during sulfurization is unavoidable. The inter-diffusion of precursors is low in a 3-layer stack sample, limiting the fabricated film's performance. CZTS films with 6-layer and 9-layer stacks result in an improved photocurrent density of ∼38 μA cm^-2 and ∼82 μA cm^-2, respectively, compared to a 3-layer sample which has a photocurrent density of ∼19 μA cm^-2. This enhancement can be attributed to the 9-layer approach's superior inter-diffusion of metallic precursors and compact, smooth CZTS microstructure evolution.

Centimeter-Scale PdS2 Ultrathin Films with High Mobility and Broadband Photoresponse

2D materials with mixed crystal phase will lead to the nonuniformity of performance and go against the practical application. Therefore, it is of great significance to develop a valid method to synthesize 2D materials with typical stoichiometry. Here, 2D palladium sulfides with centimeter scale and uniform stoichiometric ratio are synthesized via controlling the sulfurization temperature of palladium thin films. The relationship between sulfurization temperature and products is investigated in depth. Besides, the high-quality 2D PdS₂ films are synthesized via sulfurization at the temperature of 450-550 °C, which would be compatible with back-end-of-line processes in semiconductor industry with considering of process temperature. The PdS₂ films show an n-type semiconducting behavior with high mobility of 10.4 cm² V^-1 s^-1 . The PdS₂ photodetector presents a broadband photoresponse from 450 to 1550 nm. These findings provide a reliable way to synthesizing high-quality and large-area 2D materials with uniform crystal phase. The result suggests that 2D PdS₂ has significant potential in future nanoelectronics and optoelectronic applications.

Recent Progress on Graphene Flexible Photodetectors

In recent years, optoelectronics and related industries have developed rapidly. As typical optoelectronics devices, photodetectors (PDs) are widely applied in various fields. The functional materials in traditional PDs exhibit high hardness, and the performance of these rigid detectors is thus greatly reduced upon their stretching or bending. Therefore, the development of new flexible PDs with bendable and foldable functions is of great significance and has much interest in wearable, implantable optoelectronic devices. Graphene with excellent electrical and optical performance constructed on various flexible and rigid substrates has great potential in PDs. In this review, recent research progress on graphene-based flexible PDs is outlined. The research states of graphene conductive films are summarized, focusing on PDs based on single-component graphene and mixed-structure graphene, with a systematic analysis of their optical and mechanical performance, and the techniques for optimizing the PDs are also discussed. Finally, a summary of the current applications of graphene flexible PDs and perspectives is provided, and the remaining challenges are discussed.

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.

Enhanced Photocurrent of the Ag Interfaced Topological Insulator Bi2Se3 under UV- and Visible-Light Radiations

Bi₂Se₃ is a topological quantum material that is used in photodetectors, owing to its narrow bandgap, conductive surface, and insulating bulk. In this work, Ag@Bi₂Se₃ nanoplatelets were synthesized on Al₂O₃(100) substrates in a two-step process of thermal evaporation and magnetron sputtering. X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) revealed that all samples had the typical rhombohedral Bi₂Se₃. Field-emission scanning electron microscopy (FESEM)-energy dispersive x-ray spectroscopy (EDS), XPS, and HRTEM confirmed the presence of the precipitated Ag. The optical absorptance of Bi₂Se₃ nanoplatelets in UV-visible range decreased with the Ag contents. Results of photocurrent measurements under zero-bias conditions revealed that the deposited Ag affected photosensitivity. A total of 7.1 at.% Ag was associated with approximately 4.25 and 4.57 times higher photocurrents under UV and visible light, respectively, than 0 at.% Ag. The photocurrent in Bi₂Se₃ at 7.1 at.% Ag under visible light was 1.72-folds of that under UV light. This enhanced photocurrent is attributable to the narrow bandgap (~0.35 eV) of Bi₂Se₃ nanoplatelets, the Schottky field at the interface between Ag and Bi₂Se₃, the surface plasmon resonance that is caused by Ag, and the highly conductive surface that is formed from Ag and Bi₂Se₃. This work suggests that the appropriate Ag deposition enhances the photocurrent in, and increases the photosensitivity of, Bi₂Se₃ nanoplatelets under UV and visible light.

2D Bi2Se3 materials for optoelectronics

2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.

Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nm

A broadband photodetector is becoming increasingly important as a key element for multicolor imaging. We proposed an Au/n-GaSb Schottky photodetector (PD) array with a wide spectral range from ultraviolet (UV) to short-wavelength infrared (SWIR). The PD was formed by deposition of a 5 nm-thick Au layer on the n-type GaSb substrate and subsequent mesa array formation. The fabricated PD array has shown uniform electrical characteristics and good rectifying behaviors. From the photoresponse measurement, the PD has shown uniformly high external quantum efficiency (EQE) over a spectral range of 300 nm to 1700nm. The value of EQE was 35% at 300 nm and exceeded 50% in the IR region. Furthermore, the PD has shown a rapid rise time of 1.44 µs from the transient photoresponse measurement.

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V-S Process

Pristine, and In-, Sn-, and (In, Sn)-doped Bi₂Se₃ nanoplatelets synthesized on Al₂O₃(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10⁻² Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi₂Se₃. FPA–FTIR reveals that the optical bandgap of doped Bi₂Se₃ was 26.3%, 34.1%, and 43.7% lower than pristine Bi₂Se₃. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi₂Se₃ under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10⁻¹⁰ and 0.35 × 10⁻¹⁰ A and high I_photo/I_dark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10⁻² and 6.6 × 10⁻² s. Under UV light, (In,Sn)-dopedBi₂Se₃ had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi₂Se₃, indicating that (In,Sn)-doped Bi₂Se₃ exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi₂Se₃ under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi₂Se₃ has greater potential than undoped Bi₂Se₃ for use in UV and red-light photodetectors.

Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature

Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low temperature. Here we report temperature dependent weak antilocalization (WAL) effects in the sculpted nanowires of topological insulator in the presence of perpendicular magnetic field. The quadratic and linear magnetoconductivity (MC) curves at low temperature (>2 K) indicate the bulk contribution in the transport. A cusp feature in magnetoconductivity curves (positive magnetoresistance) at ultra low (<1 K) temperature and at magnetic field (<1 T) represent the WAL indicating the transport through surface states. The MC curves are discussed by using the 2D Hikami-Larkin-Nagaoka theory. The cross-over/interplay nature of positive and negative magnetoresistance observed in the MR curve at ultra-low temperature. Our results indicate that transport through topological surface states (TSS) in sculpted nanowires of Bi₂Te₃ can be achieved at mK range and linear MR observed at ∼2 K could be the coexistence of electron transport through TSS and contribution from the bulk band.

High performing flexible optoelectronic devices using thin films of topological insulator

Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi₂Te₃) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 10⁸ Jones for 1064 nm and 58 A/W, 6.1 × 10⁸ Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

Bi₂Se₃ possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs. It is also pointed out that Bi₂Se₃ is a topological insulator, making it a promising candidate for a wide range of electronic and optoelectronic applications. In this study, we investigate the growth of high-quality Bi₂Se₃ thin films on mica by the molecular beam epitaxy technique. The films exhibited a layered structure and highly c-axis-preferred growth orientation with an XRD rocking curve full-width at half-maximum (FWHM) of 0.088°, clearly demonstrating excellent crystallinity for the Bi₂Se₃ deposited on the mica substrate. The growth mechanism was studied by using an interface model associated with the coincidence site lattice unit (CSLU) developed for van der Waals epitaxies. This high (001) texture favors electron transport in the material. Hall measurements revealed a mobility of 726 cm²/(Vs) at room temperature and up to 1469 cm²/(Vs) at 12 K. The results illustrate excellent electron mobility arising from the superior crystallinity of the films with significant implications for applications in conducting electrodes in optoelectronic devices on flexible substrates.

Implementation of Bismuth Chalcogenides as an Efficient Anode: A Journey from Conventional Liquid Electrolyte to an All-Solid-State Li-Ion Battery

Bismuth chalcogenide (Bi2X3; X = sulfur (S), selenium (Se), and tellurium (Te)) materials are considered as promising materials for diverse applications due to their unique properties. Their narrow bandgap, good thermal conductivity, and environmental friendliness make them suitable candidates for thermoelectric applications, photodetector, sensors along with a wide array of energy storage applications. More specifically, their unique layered structure allows them to intercalate Li+ ions and further provide conducting channels for transport. This property makes these suitable anodes for Li-ion batteries. However, low conductivity and high-volume expansion cause the poor electrochemical cyclability, thus creating a bottleneck to the implementation of these for practical use. Tremendous endeavors have been devoted towards the enhancement of cyclability of these materials, including nanostructuring and the incorporation of a carbon framework matrix to immobilize the nanostructures to prevent agglomeration. Apart from all these techniques to improve the anode properties of Bi2X3 materials, a step towards all-solid-state lithium-ion batteries using Bi2X3-based anodes has also been proven as a key approach for next-generation batteries. This review article highlights the main issues and recent advances associated with Bi2X3 anodes using both solid and liquid electrolytes.

Stoichiometric Bi2Se3 topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications

A new fabrication process is developed for growing Bi₂Se₃ topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi₂Se₃ nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi₂Se₃, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at a temperature below 100 °C, which is of relevance for flexible electronic applications. The method is new, quick, very inexpensive, easy to control and allows obtaining films with different thickness down to one quintuple layer (QL) during the same procedure. The composition and the crystal structure of both the nanowires/nanobelts and the thin films are analysed by different optical, electronic and structural techniques. For the films, scanning tunnelling spectroscopy shows that the Fermi level is positioned in the middle of the energy bandgap as a consequence of the achieved correct stoichiometry. Ultra-thin films, with thickness in the range 1-10 QLs deposited on n-doped Si substrates, show good rectifying properties suitable for their use as photodetectors in the ultra violet-visible-near infrared wavelength range.

Transparent, flexible MAPbI3 perovskite microwire arrays passivated with ultra-hydrophobic supramolecular self-assembly for stable and high-performance photodetectors

The emergence of organic-inorganic hybrid perovskites (OHPs) has revolutionised the potential performance of optoelectronic devices; most perovskites are opaque and hence incompatible with transparent optoelectronics and sensitive to environmental degradation. Here, we have reported a single-step fabrication of ultra-long MAPbI₃ perovskite microwire arrays over a large area using stencil lithography based on sequential vacuum sublimation. The environmental stability of MAPbI₃ is empowered with a newly designed and synthesized transparent supramolecular self-assembly based on a mixture of two tripodal l-Phe-C₁₁H₂₃/C₇F₁₅ molecules, which showed a contact angle of 105° and served as ultra-hydrophobic passivation layers for more than 45 days in an ambient atmosphere. The MAPbI₃ microwire arrays passivated with the supramolecular self-assembly demonstrated for the first time both excellent transparency of ∼89% at 550 nm and a remarkable photoresponse with a photo-switching ratio of ∼10⁴, responsivity of 789 A W^-1, detectivity of 10¹⁴ Jones, linear dynamic range of ∼122 dB, and rise time of 432 μs. Furthermore, the photodetector fabricated on a flexible PET substrate demonstrated robust mechanical flexibility even beyond 1200 bending cycles. Therefore, the scalable stencil lithography and supramolecular passivation approaches have the potential to deliver next-generation transparent, flexible, and stable optoelectronic devices.

Development of topological insulator and topological crystalline insulator nanostructures

Topological insulators (TIs), a class of quantum materials with time reversal symmetry protected gapless Dirac-surface states, have attracted intensive research interests due to their exotic electronic properties. Topological crystalline insulators (TCIs), whose gapless surface states are protected by the crystal symmetry, have recently been proposed and experimentally verified as a new class of TIs. With high surface-to-volume ratio, nanoscale TI and TCI materials such as nanowires and nanoribbons can have significantly enhanced contribution from surface states in carrier transport and are thus ideally suited for the fundamental studies of topologically protected surface state transport and nanodevice fabrication. This article will review the synthesis and transport device measurements of TIs and TCIs nanostructures.

Large-area transparent flexible guanidinium incorporated MAPbI3 microstructures for high-performance photodetectors with enhanced stability

Unveiling the transparency and flexibility in perovskite-based photodetectors with superior photoresponse and environmental stability remains an open challenge. Here we report on guanidinium incorporated metal halide perovskite (MA_1-xGua_xPbI₃, x = 0 to 0.65) random percolative microstructure (RPM) fabrication using an ultra-fast spray coating technique. Remarkably, RPMs over a large area of 5 × 5 cm² on flexible substrates with a transparency of ∼50% can be achieved with enriched environmental stability. Transparent photodetectors based on MA_1-xGua_xPbI₃ (x = 0.12) RPMs manifest excellent performance with a responsivity of 187 A W^-1, a detectivity of 2.23 × 10¹² Jones and an external quantum efficiency of 44 115%. Additionally, the photodetectors exhibited superior mechanical flexibility under a wide range of bending angles and large number of binding cycles. Integrating features including transparency, high performance, stability, flexibility and scalability within a photodetector is unmatched and holds potential for novel applications in transparent and wearable optoelectronic devices.

One-pot synthesized Bi2Te3/graphene for a self-powered photoelectrochemical-type photodetector

Bismuth telluride (Bi₂Te₃) is a typical topological insulator, which possesses a narrow band gap and exhibits fascinating performance in the photodetector field. In this work, we fabricated a Bi₂Te₃/graphene heterostructure via a facile one-pot hydrothermal method. The as-prepared composites were used as the electrode materials for the photoelectrochemical (PEC)-type photodetector. From the results of PEC tests, we obviously found that the Bi₂Te₃/graphene heterostructure offers a remarkable improvement in photoresponse compared to that of sole Bi₂Te₃, and effectively demonstrates effective photocarrier generation and transfer at the interface between the graphene and Bi₂Te₃, which can enhance the properties of the photoresponse. Moreover, owing to the self-powered ability of the PEC-type photodetector, it can work under the bias potential of 0 V and exhibits a prominent photoresponse which can reach 2.2 mA W^-1. Also, the photocurrent density of the prepared Bi₂Te₃/graphene heterostructure-based photodetector can almost linearly rise with the increased irradiation power density. Even if the light intensity was reduced to 40 mW cm^-2, the photocurrent density could also reach 67 μA cm^-2, which ensures the photodetection ability of the as-prepared Bi₂Te₃/graphene under low light intensity. The excellent performance of a Bi₂Te₃/graphene heterostructure for a PEC-type photodetector holds great promise in the field of photoelectric detection.

Two-dimensional Bi2Se3 nanosheet based flexible infrared photodetector with pencil-drawn graphite electrodes on paper

Flexible optoelectronic devices have been of great significance in recent years, owing to their extensive commercial and military applications. However, the manufacturing processes of most existing flexible photodetectors are particularly complicated and expensive. Employing a facile and low cost way for constructing a high performance flexible infrared photodetector is one of the effective strategies to facilitate its practical applications. Pencil-drawing is a popular method in novel electronic and optoelectronic devices, as it is a low cost and facile fabrication process. Herein, we report a novel flexible infrared photodetector using liquid-exfoliated Bi₂Se₃ nanosheets as a light sensitive material, pencil-drawn graphite as the electrodes, and paper as the substrate. The as-fabricated photodetector exhibits high photocurrent, excellent responsivity and long-term stability under 1064 nm infrared light irradiation. In addition, as the pencil-drawn photodetector is made of a flexible paper substrate, it also well exhibits stability and durability under bending conditions. This work is proposed to be a route to construct a novel flexible infrared photodetector with a facile manufacturing process and low cost.

Laser Ablation Generation of Bismuth Selenide Clusters from Mixtures of Elements, Crystalline Bi2Se3, or Thin Films: Laser Desorption Ionization (LDI) and Surface Assisted LDI Time-of-Flight Mass Spectrometry using Graphene and Nanodiamonds

A bismuth-selenium system from mixtures of the powdered elements in various molar ratios and from Bi₂Se₃ crystals and/or thin films was studied using laser desorption ionization and surface assisted laser desorption ionization. The Bi_mSe_n clusters were observed in both positive and negative ion modes, but the mass spectra were more intense, and also a higher number of clusters was formed in the positive ion mode than in the negative mode. The BiSe_n⁺ (n = 1-8), Bi₂Se_n⁺ (n = 1-5), and Bi₃Se_n⁺ (n = 1-6) clusters were detected. Similarly, in the negative ion mode, BiSe_n^- (n = 2-9) and Bi₂Se_n^- (n = 1-2) clusters were observed. In addition, the formation of Bi_m⁺ (m = 1-5), Se_n⁺ (n = 1-8), and Se_n^- (n = 1-7) clusters was also observed. In total, 33 clusters were generated, and 4 new bismuth selenide clusters that have not been reported before (namely, BiSe₇^+/-, BiSe₈^+/-, BiSe₉^-, and Bi₂Se₅⁺) were detected. The formation of similar clusters was also observed from bismuth-selenium mixtures and from crystalline Bi₂Se₃. Furthermore, the Bi₂Se₃ thin films prepared from a magnetron sputtering technique were also examined via laser desorption ionization. The generation of clusters from the surface of graphene and nanodiamonds was also studied, but no remarkable difference with comparison to the metal surface was observed.

Selective photoresponse of plasmonic silver nanoparticle decorated Bi2Se3 nanosheets

The plasmon-enhanced photoresponse properties of a Ag nanoparticle decorated Bi₂Se₃ nanosheet (AGBS)/p-Si heterojunction device have been studied. The Ag nanoparticles, Bi₂Se₃ nanosheets, and AGBS nanocomposite are synthesized chemically. Microscopic investigations, ultimately of the AGBS nanocomposite, reveal that the Bi₂Se₃ nanosheets of thickness ∼20 nm and lateral dimension ∼1 μm are decorated with Ag nanoparticles of sizes 20-40 nm in the nanocomposite. The x-ray diffraction pattern of AGBS shows that apart from being in a metallic state, the Ag in the AGBS is also in the form of compounds with Bi, Se, and additionally O. This observation is further complemented by the x-ray photoelectron spectrum, which shows the presence of Ag⁰ and Ag⁺ states of Ag in AGBS. The UV-visible absorption spectra show the plasmonic peak of the Ag nanoparticles occurs at 420 nm; the peak is shifted to ∼500 nm in AGBS due to the modified dielectric environment of the nanoparticles. The AGBS/p-Si heterojunction shows excellent photoresponse properties, with a responsivity of 0.28 A/W, a fairly high detectivity of 4 × 10¹⁰ Jones, and an EQE of 71% under 10 V reverse bias at a 500 nm wavelength. The plasmon enhanced photoresponse at the selective wavelength makes this material attractive for high performance optoelectronic devices.

Variation of Optical Properties of Nitrogen-doped Graphene Quantum Dots with Short/Mid/Long-wave Ultraviolet for the Development of the UV Photodetector

Nitrogen-doped graphene quantum dots (NGQDs) synthesized from a single glucosamine precursor are utilized to develop a novel UV photodetector. Optical properties of NGQDs can be altered with short- (254 nm), mid- (302 nm), and long-wave (365 nm) ultraviolet (UV) exposure leading to the reduction of absorption from deep to mid UV (200-320 nm) and enhancement above 320 nm. Significant quenching of blue and near-IR fluorescence accompanied by the dramatic increase of green/yellow emission of UV-treated NGQDs can be used as a potential UV-sensing mechanism. These emission changes are attributed to the reduction of functional groups detected by Fourier transformed infrared spectroscopy and free-radical-driven polymerization of the NGQDs increasing their average size from 4.70 to 11.20 nm at 60 min treatment. Due to strong UV absorption and sensitivity to UV irradiation, NGQDs developed in this work are utilized to fabricate UV photodetectors. Tested under long-/mid-/short-wave UV, these devices show high photoresponsivity (up to 0.59 A/W) and excellent photodetectivity (up to 1.03 × 10¹¹ Jones) with highly characteristic wavelength-dependent reproducible response. This study suggests that the optical/structural properties of NGQDs can be controllably altered via different wavelength UV treatment leading us to fabricate NGQD-based novel UV photodetectors providing high responsivity and detectivity.

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level

Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in the MSM structure photodetectors, enhancements in photoresponsivity can be realized. Thus, strengthening the built-in electric field is an efficacious way to make the detection capability better. In this study, we fabricate a single GaAs nanowire MSM photodetector with superior performance by doping-adjusting the Fermi level to strengthen the built-in electric field. An outstanding responsivity of 1175 A/W is obtained. This is two orders of magnitude better than the responsivity of the undoped sample. Scanning photocurrent mappings and simulations are performed to confirm that the enhancement in responsivity is because of the increase in the hole Schottky built-in electric field, which can separate and collect the photogenerated carriers more effectively. The eloquent evidence clearly proves that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodetectors.

Strong Cathodoluminescence and Fast Photoresponse from Embedded CH3NH3PbBr3 Nanoparticles Exhibiting High Ambient Stability

This study presents a comprehensive analysis of the strong cathodoluminescence (CL), photoluminescence (PL), and photoresponse characteristics of CH₃NH₃PbBr₃ nanoparticles (NPs) embedded in a mesoporous nanowire (NW) template. Our study revealed a direct correlation between the CL and PL emissions from the perovskite NPs (Per NPs), for the first time. Per NPs are fabricated by a simple spin-coating of a perovskite precursor on the surface of metal-assisted chemically etched mesoporous Si NW arrays. The Per NPs confined in the mesopores show blue-shifted and enhanced CL emission as compared to the bare perovskite film, while the PL intensity of Per NPs is dramatically high compared to that of their bulk counterpart. A systematic analysis of the CL/PL spectra reveals that the quantum confinement effect and ultralow defects in Per NPs are mainly responsible for the enhanced CL and PL emissions. Low-temperature PL and time-resolved PL analysis confirm the high exciton binding energy and radiative recombination in Per NPs. The room temperature PL quantum yield of the Per NP film on the NW template was found to be 40.5%, while that of Per film was 2.8%. The Per NPs show improved ambient air stability than the bare film due to the protection provided by the dense NW array, since a dense NW array can slow down the lateral diffusion of oxygen and water molecules in Per NPs. Interestingly, the Si NW/Per NP junction shows superior visible light photodetection and the prototype photodetector shows a high responsivity (0.223 A/W) with response speeds of 0.32 and 0.28 s of growth and decay in photocurrent, respectively, at 2 V applied bias, which is significantly better than the reported photodetectors based on CH₃NH₃PbBr₃ nanostructures. This work demonstrates a low-cost fabrication of CH₃NH₃PbBr₃ NPs on a novel porous NW template, which shows excellent photophysical and optoelectronic properties with superior ambient stability.

High performance broadband bismuth telluride tetradymite topological insulator photodiode

A small bulk gap and the presence of Dirac electrons due to conductive surface states make tetradymite topological insulators promising candidates for optoelectronic devices. In this work, we demonstrate a highly responsive Bi₂Te₃-Si heterostructure photodiode. The thermally evaporated Bi₂Te₃ film, exhibiting a nanocrystalline nature, shows p-type doping behavior due to bismuth vacancies. As a result of the work function difference between Bi₂Te₃ and p-type Si, charge transfer occurs and a Schottky barrier is formed. Using the thermionic emission model, the barrier height (Φ_B) is extracted to be ∼0.405 eV. For minimizing the effect of extrinsic defects, the photodiodes were capped with graphene or Si₃N₄. Since graphene acts as an efficient photoexcited carrier collector, the graphene capped device outperforms the Si₃N₄ capped device. The higher quality Bi₂Te₃ nanocrystalline film of the Si₃N₄ capped photodiode contributes to a one-order-of-magnitude improvement in responsivity at 1550 nm wavelength, as compared to the graphene capped photodiode. The Si₃N₄ capped photodiode shows photoresponse even at zero bias for 1550 nm wavelength. Built-in potential due to charge transfer at the interface of Bi₂Te₃ and Si capped with a graphene electrode exhibits the highest responsivity (8.9 A W^-1). Broadband photodetection is observed in both types of photodiodes.

Novel synthesis of topological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures- nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topological insulator) materials, their hybrid heterostructures with other novel 2D materials and their scalable growth. The substrate and temperature dependent growth is investigated on insulating, superconducting, metallic, semiconducting and ferromagnetic materials. The temperature dependent synthesis enables the growth of single, few quintuples to nanosheets and nanocrystals. The density of nanostructure growth is seen more on fabricated patterns or textured substrates. The fabricated nanostructure based devices show the broadband photodetection from ultraviolet to near infrared and exhibit high photoresponsivity. Ultimately, this unique synthesis process will give easy access to fabricate devices on user friendly substrates, study nanostructures and scalable growth will enable their future technology applications.

Proximity-induced supercurrent through topological insulator based nanowires for quantum computation studies

Proximity-induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault-tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaev’s one-dimensional quantum wires, which pose a huge experimental challenge in terms of scalability of the current single nanowire based devices. Here, we address this problem by realizing robust superconductivity in junctions of fabricated topological insulator (Bi₂Se₃) nanowires proximity-coupled to conventional s-wave superconducting (W) electrodes. Milling technique possesses great potential in fabrication of any desired shapes and structures at nanoscale level, and therefore can be effectively utilized to scale-up the existing single nanowire based design into nanowire based network architectures. We demonstrate the dominant role of ballistic topological surface states in propagating the long-range proximity induced superconducting order with high I_cR_N product in long Bi₂Se₃ junctions. Large upper critical magnetic fields exceeding the Chandrasekhar-Clogston limit suggests the existence of robust superconducting order with spin-triplet cooper pairing. An unconventional inverse dependence of I_cR_N product on the width of the nanowire junction was also observed.

Transmission Electron Microscope Nanosculpting of Topological Insulator Bismuth Selenide

We present a process for sculpting Bi₂Se₃ nanoflakes into application-relevant geometries using a high-resolution transmission electron microscope. This process takes several minutes to sculpt small areas and can be used to cut the Bi₂Se₃ into wires and rings, to thin areas of the Bi₂Se₃, and to drill circular holes and lines. We determined that this method allows for sub 10 nm features and results in clean edges along the drilled regions. Using in situ high-resolution imaging, selected area diffraction, and atomic force microscopy, we found that this lithography process preserves the crystal structure of Bi₂Se₃. TEM sculpting is more precise and potentially results in cleaner edges than does ion-beam modification; therefore, the promise of this method for thermoelectric and topological devices calls for further study into the transport properties of such structures.

Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications

Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.

Observation and Manipulation of Visible Edge Plasmons in Bi2Te3 Nanoplates

Noble metals, like Ag and Au, are the most intensively studied plasmonic materials in the visible range. Plasmons in semiconductors, however, are usually believed to be in the infrared wavelength region due to the intrinsic low carrier concentrations. Herein, we observe the edge plasmon modes of Bi₂Te₃, a narrow-band gap semiconductor, in the visible spectral range using photoemission electron microscopy (PEEM). The Bi₂Te₃ nanoplates excited by 400 nm femtosecond laser pulses exhibit strong photoemission intensities along the edges, which follow a cos⁴ dependence on the polarization state of incident beam. Because of the phase retardation effect, plasmonic response along different edges can be selectively exited. The thickness-dependent photoemission intensities exclude the spin-orbit induced surface states as the origin of these plasmonic modes. Instead, we propose that the interband transition-induced nonequilibrium carriers might play a key role. Our results not only experimentally demonstrate the possibility of visible plasmons in semiconducting materials but also open up a new avenue for exploring the optical properties of topological insulator materials using PEEM.

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions

Due to miniaturization of device dimensions, the next generation's photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm-1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi₂Te₃ is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi₂Te₃ nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi₂Te₃ show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

Materials analysis and focused ion beam nanofabrication of topological insulator Bi2Se3

Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the thickness of Bi₂Se₃ and to create nanowires from larger structures. Changes in the material structure of Bi₂Se₃ nanomaterials that have been milled using a focused ion beam are presented. In order to characterize the effects of ion beam processing on the samples, we use a variety of techniques including analytical transmission electron microscopy and atomic force microscopy. The results show that while part of the material remains intact after shaping, amorphous regions form where the beam has been used to thin the sample. For wires created by thinning the material down to the substrate, the sidewalls of the wires appear intact based on diffraction images from samples cut at an angle, but thin crystalline regions remain at the wire edges. Even with the resulting defects and limitations when thinning, focused ion beam milling can be used to fabricate custom geometries of Bi₂Se₃ nanostructures.

A broadband photodetector based on Rhodamine B-sensitized ZnO nanowires film

A broadband photodetector has been developed on the basis of ZnO nanowires (NWs)/Rhodamine B (RhB) hybrid system. The device is fabricated by spraying NWs on to gold interdigital electrodes followed by modifying the NWs via an RhB solution-casting process. Measurements show that the as-fabricated device demonstrates photoresponsivity ranging from 300 nm to 700 nm with a bandwidth as large as 400 nm. The role of the dye sensitizer adsorbed on the surface of NWs is modeled to alter the transportation path of photo-generated carriers. The calculations based on the measurements reveal that the device exhibits a prominent responsivity in the interested band with maximum responsivity of 5.5 A/W for ultraviolet (UV) light and 3 A/W for visible (VIS) light under 8 V bias, respectively. The sensitization not only widens the response spectrum with external quantum efficiency leaping up to 771% at VIS but also improves UV responsivity with maximum 51% enhancement. From the time–dependent photo-current measurement, it is found that the response time (rise and decay times in total) of the device largely reduced from 17.5 s to 3.3 s after sensitization. A comparison of the obtained photodetector with other ZnO-based photodetectors is summarized from the view point of responsivity and bandwidth.

Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires

We report the experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi₂Se₃). The value of the exponent (d + 1)^-1 in the hopping equation was extracted as [Formula: see text]for different widths of nanowires, which is the proof of the presence of Efros-Shklovskii hopping transport mechanism in a strongly disordered system. High localization lengths (0.5 nm, 20 nm) were calculated for the devices. A careful analysis of the temperature dependent fluctuations present in the magnetoresistance curves, using the standard Universal Conductance Fluctuation theory, indicates the presence of 2D topological surface states. Also, the surface state contribution to the conductance was found very close to one conductance quantum. We believe that our experimental findings shed light on the understanding of quantum transport in disordered topological insulator based nanostructures.

Broadband ultrafast photovoltaic detectors based on large-scale topological insulator Sb2Te3/STO heterostructures

Topological insulators (TIs) are new states of quantum matter in which the spin-momentum-locked surface states reside in the bulk insulating gap and have triggered extensive investigations on fundamental properties and potential applications. Herein, we report scalable, broadband photovoltaic detectors based on the topological insulator Sb₂Te₃/strontium titanate (STO) heterostructure. Large-scale (2 mm × 5 mm), high crystalline quality p-type Sb₂Te₃ films were fabricated on an n-type STO substrate by the molecular beam epitaxy (MBE) method. The Sb₂Te₃/STO heterostructures exhibited pronounced photovoltaic behavior in a wide range of temperatures as a result of a strong built-in field at the hetero-interface. Superior performances of broadband (from visible to infrared, 405 nm-1550 nm) and ultrafast (rise time ∼30 μs, fall time ∼95 μs) photoresponses were achieved under ambient conditions. The prominent repeatability and stability indicated that our photodetectors can operate effectively in harsh circumstances. These results show that stacking the topological insulator thin films on a strongly correlated oxide substrate using the MBE approach holds great promise for high performance optoelectronic applications.

Topological Crystalline Insulator SnTe/Si Vertical Heterostructure Photodetectors for High-Performance Near-Infrared Detection

Due to the gapless surface state and narrow bulk band gap, the light absorption of topological crystalline insulators covers a broad spectrum ranging from terahertz to infrared, revealing promising applications in new generation optoelectronic devices. To date, the photodetectors based on topological insulators generally suffer from a large dark current and a weaker photocurrent especially under the near-infrared lights, which severely limits the practical application of devices. Owing to the lower excitation energy of infrared lights, the photodetection application of topological crystalline insulators in the near-infrared region relies critically on understanding the preparation and properties of their heterostructures. Herein, we fabricate the high-quality topological crystalline insulator SnTe film/Si vertical heterostructure by a simple physical vapor deposition process. The resultant heterostructure exhibits an excellent diode characteristic, enabling the construction of high-performance near-infrared photodetectors. The built-in electric field at SnTe/Si interface enhances the absorption efficiency of near-infrared lights and greatly facilitates the separation of photogenerated carriers, making the device capable of operating as a self-driven photodetector. The as-grown SnTe film acts as the hole transport layer in heterostructure photodetectors, promoting the transport of holes to electrode and reducing electron-hole recombination effectively. These merits enable the SnTe/Si heterostructure photodetector to have a high responsivity of 2.36 AW^-1, a high detectivity of 1.54 × 10¹⁴ Jones, and a large bandwidth of 10⁴ Hz in the near-infrared wavelength, which makes the detector have a promising market in novel device applications.

Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.

Extremely high-performance visible light photodetector in the Sb2SeTe2 nanoflake

The photocurrent was performed in the Sb₂SeTe₂ topological insulator at a wavelength of 532 nm. It exhibits extremely high performance that the responsivity and the photoconductive gain reach 2293 AW⁻¹ and 5344 at 1 V. This high photoresponse is orders of magnitude higher than most reported values in topological insulators and two-dimensional transitional metal dichalcogenides. This finding suggests that the Sb₂SeTe₂ nanoflake has great potential for future optoelectronic device applications.

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

In the last few years, research based on topological insulators (TIs) has been of great interest due to their intrinsic exotic fundamental properties and potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and the study of their transport properties has mostly focused on high quality crystalline nanowires or nanoribbons. Here, we report a robust approach to Bi₂Se₃ nanowire formation from deposited flakes using an ion beam milling method. Fabricated Bi₂Se₃ nanowire devices were employed to investigate the robustness of the topological surface state (TSS) to gallium ion doping and any deformation in the material due to the fabrication tools. We report on the quantum oscillations in magnetoresistance (MR) curves under the parallel magnetic field. The resistance versus magnetic field curves are studied and compared with Aharonov-Bohm (AB) interference effects, which further demonstrate transport through the TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations, and these can be exploited further in studying the exotic electronic properties associated with TI-based nanodevices.

FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance

Since the discovery of topological insulators (TIs), there are considerable interests in demonstrating metallic surface states (SS), their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by fabricating nanodevices. Here we address an important scientific issue related to TI whether one can clearly demonstrate the robustness of topological surface states (TSS) to the presence of disorder that does not break any fundamental symmetry. The simple straightforward method of FIB milling was used to synthesize nanowires of Bi₂Se₃ which we believe is an interesting route to test robustness of TSS and the obtained results are new compared to many of the earlier papers on quantum transport in TI demonstrating the robustness of metallic SS to gallium (Ga) doping. In the presence of perpendicular magnetic field, we have observed the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance (LMR), which was systematically investigated for different channel lengths, indicating the Dirac dispersive surface states. The transport properties and estimated physical parameters shown here demonstrate the robustness of SS to the fabrication tools triggering flexibility to explore new exotic quantum phenomena at nanodevice level.

Highly responsive photoconductance in a Sb2SeTe2 topological insulator nanosheet at room temperature

SEM picture of the Sb₂SeTe₂ nanosheet. The top-right figure shows the linear current–voltage curve indicating the ohmic contact between the Pt electrodes and Sb₂SeTe₂ nanosheet.

Bismuth sulfide nanoflowers as high performance near-infrared laser detectors and visible-light-driven photocatalysts

Bi₂S₃ nanoflowers flexible laser detector.