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Nketia-Yawson B, Nketia-Yawson V, Buer AB, Jo JW. Interfacial Charge Transport Enhancement of Liquid-Crystalline Polymer Transistors Enabled by Ionic Polyurethane Dielectric. Macromol Rapid Commun 2024; 45:e2400265. [PMID: 38760951 DOI: 10.1002/marc.202400265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2024] [Revised: 05/10/2024] [Indexed: 05/20/2024]
Abstract
In organic field-effect transistors (OFETs) using disordered organic semiconductors, interface traps that hinder efficient charge transport, stability, and device performance are inevitable. Benchmark poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) liquid-crystalline polymer semiconductor has been extensively investigated for organic electronic devices due to its promising combination of charge transport and light emission properties. This study demonstrates that high-capacitance single-layered ionic polyurethane (PU) dielectrics enable enhanced charge transport in F8T2 OFETs. The ionic PU dielectrics are composed of a mild blending of PU ionogel and PU solution, thereby forming a solid-state film with robust interfacial characteristics with semiconductor layer and gate electrode in OFETs and measuring high capacitance values above 10 µF cm-2 owing to the combined dipole polarization and electric double layer formation. The optimized fabricated ionic PU-gated OFETs exhibit a low-voltage operation at -3 V with a remarkable hole mobility of over 5 cm2 V-1 s-1 (average = 2.50 ± 1.18 cm2 V-1 s-1), which is the highest mobility achieved so far for liquid-crystalline F8T2 OFETs. This device also provides excellent bias-stable characteristics in ambient air, exhibiting a negligible threshold voltage shift of -0.03 V in the transfer curves after extended bias stress, with a reduced trap density.
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Affiliation(s)
- Benjamin Nketia-Yawson
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (phct), Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Vivian Nketia-Yawson
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (phct), Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Albert Buertey Buer
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (phct), Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Jea Woong Jo
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (phct), Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
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2
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Guo L, Liu K, Tan X, Wang X, Huang J, Wei Z, Chen G. B ← N Coordination Enables Efficient p-Doping in a Pyrazine-Based Polymer Donor Toward Enhanced Photovoltaic Performance. Macromolecules 2021. [DOI: 10.1021/acs.macromol.1c01793] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Liang Guo
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China
| | - Kaikai Liu
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China
- Institute of Luminescent Materials and Information Displays, Huaqiao University, Xiamen 361021, P. R. China
| | - Xueyan Tan
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China
| | - Xiaoling Wang
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China
| | - Jianhua Huang
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China
| | - Zhanhua Wei
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China
- Institute of Luminescent Materials and Information Displays, Huaqiao University, Xiamen 361021, P. R. China
| | - Guohua Chen
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China
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3
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Scaccabarozzi AD, Basu A, Aniés F, Liu J, Zapata-Arteaga O, Warren R, Firdaus Y, Nugraha MI, Lin Y, Campoy-Quiles M, Koch N, Müller C, Tsetseris L, Heeney M, Anthopoulos TD. Doping Approaches for Organic Semiconductors. Chem Rev 2021; 122:4420-4492. [PMID: 34793134 DOI: 10.1021/acs.chemrev.1c00581] [Citation(s) in RCA: 77] [Impact Index Per Article: 25.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.
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Affiliation(s)
- Alberto D Scaccabarozzi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Aniruddha Basu
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Filip Aniés
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Jian Liu
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Osnat Zapata-Arteaga
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Ross Warren
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Yuliar Firdaus
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.,Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung 40135, Indonesia
| | - Mohamad Insan Nugraha
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Yuanbao Lin
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Mariano Campoy-Quiles
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Norbert Koch
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekulé-Strasse 5, 12489 Berlin, Germany.,Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Leonidas Tsetseris
- Department of Physics, National Technical University of Athens, Athens GR-15780, Greece
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
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Pei K, Lau AHY, Chan PKL. Understanding molecular surface doping of large bandgap organic semiconductors and overcoming the contact/access resistance in organic field-effect transistors. Phys Chem Chem Phys 2020; 22:7100-7109. [PMID: 32202576 DOI: 10.1039/d0cp00487a] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The contact resistance (Rc) and the effective carrier mobility (μeff) are considered as the important indicators of the performance of organic field-effect transistors (OFETs). Conventionally, the contact resistance is regarded as the interface effect between the metal electrodes and the organic semiconductors, while the carrier mobility is correlated to the crystallinity and π-π stacking of the organic molecules. In the staggered OFETs, Rc is actually closely correlated to μeff through the channel sheet resistance. Besides, the accuracy of the carrier mobility directly extracted from the non-ideal transfer curves with significant contact effect is always questionable. Herein, a diffusion-lead surface doping approach is employed to improve the contact resistance and mobility issues simultaneously. By suppressing the trap states in the sublimated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), we observed a 3-fold increase in the carrier mobility from 0.5 to 1.6 cm2 V-1 s-1, and the Rc also drops remarkably from 25.7 kΩ cm to 5.2 kΩ cm. Moreover, the threshold voltage (VTH), subthreshold swing (SS) and the bias stability of the OFETs are also significantly improved. Based on the detailed characterization of the C8-BTBT film upon surface doping, including X-ray diffraction (XRD) for the film crystallinity, Kelvin probe force microscopy (KPFM) for the surface potential, trap state investigation by density of states (DOS) measurement and electrical circuit modeling for partial doping analysis, we confirmed that the spontaneous charge transfer process due to the diffusion of the F4-TCNQ dopants in the C8-BTBT matrix can lead to an effective trap filling. This technique and findings can be potentially developed into a general approach for the improvement of different performance parameters of OFETs.
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Affiliation(s)
- Ke Pei
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong.
| | - Albert Ho Yuen Lau
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong.
| | - Paddy Kwok Leung Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong.
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5
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Paterson AF, Tsetseris L, Li R, Basu A, Faber H, Emwas AH, Panidi J, Fei Z, Niazi MR, Anjum DH, Heeney M, Anthopoulos TD. Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V -1 s -1. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900871. [PMID: 31074923 DOI: 10.1002/adma.201900871] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2019] [Revised: 04/09/2019] [Indexed: 06/09/2023]
Abstract
Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.
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Affiliation(s)
- Alexandra F Paterson
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Leonidas Tsetseris
- Department of Physics, National Technical University of Athens, Athens, GR-15780, Greece
| | - Ruipeng Li
- Brookhaven National Lab, Upton, NY, 11973, USA
| | - Aniruddha Basu
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hendrik Faber
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Abdul-Hamid Emwas
- Core Labs, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Julianna Panidi
- Department of Chemistry and Centre for Plastic Electronics, Imperial College London, South Kensington, SW7 2AZ, London, UK
| | - Zhuping Fei
- Department of Chemistry and Centre for Plastic Electronics, Imperial College London, South Kensington, SW7 2AZ, London, UK
| | - Muhammad R Niazi
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Dalaver H Anjum
- Core Labs, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Martin Heeney
- Department of Chemistry and Centre for Plastic Electronics, Imperial College London, South Kensington, SW7 2AZ, London, UK
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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Zessin J, Xu Z, Shin N, Hambsch M, Mannsfeld SCB. Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane. ACS APPLIED MATERIALS & INTERFACES 2019; 11:2177-2188. [PMID: 30596425 DOI: 10.1021/acsami.8b12346] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Doping is a powerful tool to control the majority charge carrier density in organic field-effect transistors and the threshold voltage of these devices. Here, a surface doping approach is shown, where the dopant is deposited on the prefabricated polycrystalline semiconducting layer. In this study, (tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane (FTCS), a fluorinated alkylsilane is used as a dopant, which is solution processable and much cheaper than conventional p-type dopants, such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). In this work, the depositions from the gas phase and from solution are compared. Both deposition approaches led to an increased conductivity and to a shift in the threshold voltage to more positive values, both of which indicate a p-type doping effect. The magnitude of the threshold voltage shift could be controlled by the FTCS deposition time (from vapor) or FTCS concentration (from solution); for short deposition times and low concentrations, the off current stayed constant and the mobility decreased only slightly. In the low doping concentration regime, both approaches resulted in similar transistor characteristics, i.e., similar values of shift in the threshold and turn-on voltage as well as mobility, ION/ IOFF ratio and amount of introduced free charge carriers. In comparison with vapor deposition, the solution-based approach can be conducted with less material and in a shorter time, which is critical for industrial applications.
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Affiliation(s)
- Jakob Zessin
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Zheng Xu
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Nara Shin
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
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7
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Xu Y, Sun H, Liu A, Zhu HH, Li W, Lin YF, Noh YY. Doping: A Key Enabler for Organic Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801830. [PMID: 30101530 DOI: 10.1002/adma.201801830] [Citation(s) in RCA: 63] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2018] [Revised: 04/19/2018] [Indexed: 06/08/2023]
Abstract
Organic field-effect transistors (OFETs) are the central building blocks of organic electronics, but still suffer from low performance and manufacturing difficulties. This is due in part to the absence of doping, which is mostly excluded from OFET applications for the concern about uncontrollable dopant diffusion. Doping enabled the modern semiconductor industry to build essential components like Ohmic contacts and P-N junctions, empowering devices to function as designed. Recent breakthroughs in organic semiconductors and doping techniques demonstrated that doping can also be a key enabler for high-performance OFETs. However, the knowledge of organic doping remains limited particularly for OFET use. Therefore, this review addresses OFET doping from a device perspective. The paper overviews doping basics and roles in advanced complementary technologies. These fundamentals help to understand why and how doping provides the desired transistor characteristics. Typical OFETs without doping are discussed, with consideration for operating principle and problems caused by the absence of doping. Achievements for channel, contact, and overall doping are also examined to clarify the corresponding doping roles. Finally, doping mechanisms, techniques, and dopants associated with OFET applications are reviewed. This paper promotes fundamental understanding of OFET doping for the development of high-performance OFETs with doped components.
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Affiliation(s)
- Yong Xu
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul, 100-715, Republic of Korea
| | - Huabin Sun
- School of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu, 210023, China
| | - Ao Liu
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul, 100-715, Republic of Korea
| | - Hui-Hui Zhu
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul, 100-715, Republic of Korea
| | - Wenwu Li
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), East China Normal University, Shanghai, 200241, China
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Yong-Young Noh
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul, 100-715, Republic of Korea
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8
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Jacobs IE, Moulé AJ. Controlling Molecular Doping in Organic Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1703063. [PMID: 28921668 DOI: 10.1002/adma.201703063] [Citation(s) in RCA: 186] [Impact Index Per Article: 26.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2017] [Revised: 07/24/2017] [Indexed: 05/23/2023]
Abstract
The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping.
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Affiliation(s)
- Ian E Jacobs
- Department of Materials Science, University of California, Davis, 1 Shields Avenue, Davis, CA, 95616, USA
| | - Adam J Moulé
- Department of Chemical Engineering, University of California, Davis, 1 Shields Avenue, Davis, CA, 95616, USA
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Kroon R, Kiefer D, Stegerer D, Yu L, Sommer M, Müller C. Polar Side Chains Enhance Processability, Electrical Conductivity, and Thermal Stability of a Molecularly p-Doped Polythiophene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700930. [PMID: 28437018 DOI: 10.1002/adma.201700930] [Citation(s) in RCA: 90] [Impact Index Per Article: 12.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2017] [Indexed: 05/23/2023]
Abstract
Molecular doping of organic semiconductors is critical for optimizing a range of optoelectronic devices such as field-effect transistors, solar cells, and thermoelectric generators. However, many dopant:polymer pairs suffer from poor solubility in common organic solvents, which leads to a suboptimal solid-state nanostructure and hence low electrical conductivity. A further drawback is the poor thermal stability through sublimation of the dopant. The use of oligo ethylene glycol side chains is demonstrated to significantly improve the processability of the conjugated polymer p(g4 2T-T)-a polythiophene-in polar aprotic solvents, which facilitates coprocessing of dopant:polymer pairs from the same solution at room temperature. The use of common molecular dopants such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) is explored. Doping of p(g4 2T-T) with F4TCNQ results in an electrical conductivity of up to 100 S cm-1 . Moreover, the increased compatibility of the polar dopant F4TCNQ with the oligo ethylene glycol functionalized polythiophene results in a high degree of thermal stability at up to 150 °C.
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Affiliation(s)
- Renee Kroon
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - David Kiefer
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Dominik Stegerer
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
- Macromolecular Chemistry, Freiburg University, 79104, Freiburg, Germany
| | - Liyang Yu
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Michael Sommer
- Macromolecular Chemistry, Freiburg University, 79104, Freiburg, Germany
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
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Lee WY, Wu HC, Lu C, Naab BD, Chen WC, Bao Z. n-Type Doped Conjugated Polymer for Nonvolatile Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1605166. [PMID: 28234405 DOI: 10.1002/adma.201605166] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2016] [Revised: 01/04/2017] [Indexed: 06/06/2023]
Abstract
This study demonstrates a facile way to efficiently induce strong memory behavior from common p-type conjugated polymers by adding n-type dopant 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole. The n-type doped p-channel conjugated polymers not only enhance n-type charge transport characteristics of the polymers, but also facilitate to storage charges and cause reversible bistable (ON and OFF states) switching upon application of gate bias. The n-type doped memory shows a large memory window of up to 47 V with an on/off current ratio larger than 10 000. The charge retention time can maintain over 100 000 s. Similar memory behaviors are also observed in other common semiconducting polymers such as poly(3-hexyl thiophene) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene], and a high mobility donor-acceptor polymer, poly(isoindigo-bithiophene). In summary, these observations suggest that this approach is a general method to induce memory behavior in conjugated polymers. To the best of the knowledge, this is the first report for p-type polymer memory achieved using n-type charge-transfer doping.
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Affiliation(s)
- Wen-Ya Lee
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, 106, Taiwan, Republic of China
- Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA
| | - Hung-Chin Wu
- Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, Republic of China
| | - Chien Lu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, Republic of China
| | - Benjamin D Naab
- Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, Republic of China
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA
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Abstract
Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.
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Affiliation(s)
- Björn Lüssem
- Department of Physics, Kent State University , Kent, Ohio 44242, United States
| | - Chang-Min Keum
- Department of Physics, Kent State University , Kent, Ohio 44242, United States
| | - Daniel Kasemann
- Institut für Angewandte Photophysik, TU Dresden , 01069 Dresden, Germany
| | - Ben Naab
- Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Karl Leo
- Institut für Angewandte Photophysik, TU Dresden , 01069 Dresden, Germany
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Palin L, Conterosito E, Caliandro R, Boccaleri E, Croce G, Kumar S, van Beek W, Milanesio M. Rational design of the solid-state synthesis of materials based on poly-aromatic molecular complexes. CrystEngComm 2016. [DOI: 10.1039/c6ce00936k] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
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13
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Nam S, Oh N, Zhai Y, Shim M. High efficiency and optical anisotropy in double-heterojunction nanorod light-emitting diodes. ACS NANO 2015; 9:878-885. [PMID: 25565187 DOI: 10.1021/nn506577p] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Recent advances in colloidal quantum dot light-emitting diodes (QD-LEDs) have led to efficiencies and brightness that rival the best organic LEDs. Nearly ideal internal quantum efficiency being achieved leaves light outcoupling as the only remaining means to improve external quantum efficiency (EQE) but that might require radically different device design and reoptimization. However, the current state-of-the-art QD-LEDs are based on spherical core/shell QDs, and the effects of shape and optical anisotropy remain essentially unexplored. Here, we demonstrate solution-processed, red-emitting double-heterojunction nanorod (DHNR)-LEDs with efficient hole transport exhibiting low threshold voltage and high brightness (76,000 cd m(-2)) and efficiencies (EQE = 12%, current efficiency = 27.5 cd A(-1), and power efficiency = 34.6 lm W(-1)). EQE exceeding the expected upper limit of ∼ 8% (based on ∼ 20% light outcoupling and solution photoluminescence quantum yield of ∼ 40%) suggests shape anisotropy and directional band offsets designed into DHNRs play an important role in enhancing light outcoupling.
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Affiliation(s)
- Sooji Nam
- Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign Urbana, Illinois 61801, United States
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14
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Pfattner R, Rovira C, Mas-Torrent M. Organic metal engineering for enhanced field-effect transistor performance. Phys Chem Chem Phys 2015; 17:26545-52. [DOI: 10.1039/c4cp03492a] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The use of charge transfer salts in OFETs offers unique possibilities for enhancing the device performance.
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Affiliation(s)
- Raphael Pfattner
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
- 08193 Bellaterra
- Spain
- Networking Research Center on Bioengineering
- Biomaterials and Nanomedicine (CIBER-BBN)
| | - Concepció Rovira
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
- 08193 Bellaterra
- Spain
- Networking Research Center on Bioengineering
- Biomaterials and Nanomedicine (CIBER-BBN)
| | - Marta Mas-Torrent
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
- 08193 Bellaterra
- Spain
- Networking Research Center on Bioengineering
- Biomaterials and Nanomedicine (CIBER-BBN)
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15
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Ghani F, Opitz A, Pingel P, Heimel G, Salzmann I, Frisch J, Neher D, Tsami A, Scherf U, Koch N. Charge transfer in and conductivity of molecularly doped thiophene-based copolymers. ACTA ACUST UNITED AC 2014. [DOI: 10.1002/polb.23631] [Citation(s) in RCA: 38] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Fatemeh Ghani
- Institut für Physik and IRIS Adlershof; Humboldt-Universität zu Berlin; Newtonstr. 15 D-12489 Berlin Germany
| | - Andreas Opitz
- Institut für Physik and IRIS Adlershof; Humboldt-Universität zu Berlin; Newtonstr. 15 D-12489 Berlin Germany
| | - Patrick Pingel
- Institut für Physik and IRIS Adlershof; Humboldt-Universität zu Berlin; Newtonstr. 15 D-12489 Berlin Germany
| | - Georg Heimel
- Institut für Physik and IRIS Adlershof; Humboldt-Universität zu Berlin; Newtonstr. 15 D-12489 Berlin Germany
| | - Ingo Salzmann
- Institut für Physik and IRIS Adlershof; Humboldt-Universität zu Berlin; Newtonstr. 15 D-12489 Berlin Germany
| | - Johannes Frisch
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH; Albert-Einstein-Str. 15 D-12489 Berlin Germany
| | - Dieter Neher
- Institut für Physik und Astronomie; Universität Potsdam; Karl-Liebknecht-Str. 24-25 D-14476 Potsdam Germany
| | - Argiri Tsami
- Makromolekulare Chemie; Bergische Universität Wuppertal; Gaußstr. 20 D-42119 Wuppertal Germany
| | - Ullrich Scherf
- Makromolekulare Chemie; Bergische Universität Wuppertal; Gaußstr. 20 D-42119 Wuppertal Germany
| | - Norbert Koch
- Institut für Physik and IRIS Adlershof; Humboldt-Universität zu Berlin; Newtonstr. 15 D-12489 Berlin Germany
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16
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Doped organic transistors operating in the inversion and depletion regime. Nat Commun 2014; 4:2775. [PMID: 24225722 PMCID: PMC3868197 DOI: 10.1038/ncomms3775] [Citation(s) in RCA: 152] [Impact Index Per Article: 15.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/24/2013] [Accepted: 10/15/2013] [Indexed: 11/08/2022] Open
Abstract
The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters--in particular, the threshold voltage and the ON/OFF ratio--can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer.
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17
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Zhang Y, Hanifi D, Lim E, Chourou S, Alvarez S, Pun A, Hexemer A, Ma B, Liu Y. Enhancing the performance of solution-processed n-type organic field-effect transistors by blending with molecular "aligners". ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:1223-1228. [PMID: 24591009 DOI: 10.1002/adma.201304032] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2013] [Revised: 10/04/2013] [Indexed: 06/03/2023]
Abstract
A novel approach to enhancing the performance of solution-processed n-type organic field-effect transistors by using trace amounts of molecular "aligners" to manipulate the assembly of "matrix" molecules in thin films is demonstrated. The device performance is one order of magnitude higher in 1wt% blended thin films than that in neat films, which correlates to an induced change of preferred orientation of the in-plane π-stacking molecules upon blending.
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Affiliation(s)
- Yue Zhang
- The Molecular Foundry, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California, 94720, USA
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18
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Chang HC, Liu CL, Chen WC. Nonvolatile organic thin film transistor memory devices based on hybrid nanocomposites of semiconducting polymers: gold nanoparticles. ACS APPLIED MATERIALS & INTERFACES 2013; 5:13180-13187. [PMID: 24224739 DOI: 10.1021/am404187r] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We report the facile fabrication and characteristics of organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium. Electrical bias sweep/excitation effectively modulates the current response of hybrid memory devices through the charge transfer between F8T2 channel and functionalized Au NPs trapping sites. The electrical performance of the hybrid memory devices can be effectively controlled though the loading concentrations (0-9 %) of Au NPs and organic thiolate ligands on Au NP surfaces with different carbon chain lengths (Au-L6, Au-L10, and Au-L18). The memory window induced by voltage sweep is considerably increased by the high content of Au NPs or short carbon chain on the ligand. The hybrid nanocomposite of F8T2:9% Au-L6 provides the OTFT memories with a memory window of ~41 V operated at ± 30 V and memory ratio of ~1 × 10(3) maintained for 1 × 10(4) s. The experimental results suggest that the hybrid materials of the functionalized Au NPs in F8T2 matrix have the potential applications for low voltage-driven high performance nonvolatile memory devices.
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Affiliation(s)
- Hsuan-Chun Chang
- Department of Chemical Engineering, National Taiwan University , Taipei, 10617 Taiwan
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19
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Kim A, Jang KS, Kim J, Won JC, Yi MH, Kim H, Yoon DK, Shin TJ, Lee MH, Ka JW, Kim YH. Solvent-free directed patterning of a highly ordered liquid crystalline organic semiconductor via template-assisted self-assembly for organic transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:6219-25. [PMID: 23963897 DOI: 10.1002/adma.201302719] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2013] [Revised: 07/19/2013] [Indexed: 05/23/2023]
Abstract
Highly ordered organic semiconductor micropatterns of the liquid-crystalline small molecule 2,7-didecylbenzothienobenzothiophene (C10 -BTBT) are fabricated using a simple method based on template-assisted self-assembly (TASA). The liquid crystallinity of C10 -BTBT allows solvent-free fabrication of high-performance printed organic field-effect transistors (OFETs).
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Affiliation(s)
- Aryeon Kim
- Advanced Functional Materials Research Group, KRICT, Daejeon, 305-600, Korea
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20
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Naab BD, Himmelberger S, Diao Y, Vandewal K, Wei P, Lussem B, Salleo A, Bao Z. High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:4663-4667. [PMID: 23813467 DOI: 10.1002/adma.201205098] [Citation(s) in RCA: 29] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2012] [Revised: 04/29/2013] [Indexed: 06/02/2023]
Abstract
An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.
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Affiliation(s)
- Benjamin D Naab
- Department of Chemical Engineering, Stanford University, 359 N-S Axis Stauffer III, Stanford, CA 94303, USA
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21
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Yoon JY, Jeong S, Lee SS, Kim YH, Ka JW, Yi MH, Jang KS. Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor. ACS APPLIED MATERIALS & INTERFACES 2013; 5:5149-5155. [PMID: 23692313 DOI: 10.1021/am400996q] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We studied a low-temperature-annealed sol-gel-derived alumina interlayer between the organic semiconductor and the organic gate insulator for high-performance organic thin-film transistors. The alumina interlayer was deposited on the polyimide gate insulator by a simple spin-coating and 200 °C-annealing process. The leakage current density decreased by the interlayer deposition: at 1 MV/cm, the leakage current densities of the polyimide and the alumina/polyimide gate insulators were 7.64 × 10(-7) and 3.01 × 10(-9) A/cm(2), respectively. For the first time, enhancement of the organic thin-film transistor performance by introduction of an inorganic interlayer between the organic semiconductor and the organic gate insulator was demonstrated: by introducing the interlayer, the field-effect mobility of the solution-processed organic thin-film transistor increased from 0.35 ± 0.15 to 1.35 ± 0.28 cm(2)/V·s. Our results suggest that inorganic interlayer deposition could be a simple and efficient surface treatment of organic gate insulators for enhancing the performance of solution-processed organic thin-film transistors.
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Affiliation(s)
- Jun-Young Yoon
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, Yuseong-gu, Daejeon 305-600, Republic of Korea
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22
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Xiao S, Kang SJ, Zhong Y, Zhang S, Scott AM, Moscatelli A, Turro NJ, Steigerwald ML, Li H, Nuckolls C. Controlled Doping in Thin-Film Transistors of Large Contorted Aromatic Compounds. Angew Chem Int Ed Engl 2013. [DOI: 10.1002/ange.201300209] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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23
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Xiao S, Kang SJ, Zhong Y, Zhang S, Scott AM, Moscatelli A, Turro NJ, Steigerwald ML, Li H, Nuckolls C. Controlled Doping in Thin-Film Transistors of Large Contorted Aromatic Compounds. Angew Chem Int Ed Engl 2013; 52:4558-62. [DOI: 10.1002/anie.201300209] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2013] [Revised: 02/20/2013] [Indexed: 11/12/2022]
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24
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Kim JH, Yun SW, An BK, Han YD, Yoon SJ, Joo J, Park SY. Remarkable mobility increase and threshold voltage reduction in organic field-effect transistors by overlaying discontinuous nano-patches of charge-transfer doping layer on top of semiconducting film. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:719-724. [PMID: 23136048 DOI: 10.1002/adma.201202789] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2012] [Revised: 09/07/2012] [Indexed: 06/01/2023]
Abstract
An effective strategy for significantly increasing the organic transistor mobility with simultaneous reduction of the threshold voltage utilizing discontinuous nano-patches of charge-transfer doping layer is demonstrated. By overlaying the nano-patches on top of a given semiconducting film, mobility and threshold voltage of p-type pentacene are remarkably improved to 4.52 cm(2) V(-1) s(-1) and -0.4 V, and those of n-type Hex-4-TFPTA are also improved to 2.57 cm(2) V(-1) s(-1) and 4.1 V.
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Affiliation(s)
- Jong H Kim
- Center for Supramolecular Optoelectronic Materials, Department of Materials Science and Engineering, Seoul National University, Korea
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25
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Jang KS, Kim WS, Won JM, Kim YH, Myung S, Ka JW, Kim J, Ahn T, Yi MH. Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors. Phys Chem Chem Phys 2013. [DOI: 10.1039/c2cp43529b] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
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Nam S, Kim J, Lee H, Kim H, Ha CS, Kim Y. Doping effect of organosulfonic acid in poly(3-hexylthiophene) films for organic field-effect transistors. ACS APPLIED MATERIALS & INTERFACES 2012; 4:1281-1288. [PMID: 22288534 DOI: 10.1021/am300141m] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We attempted to dope poly(3-hexylthiophene) (P3HT) with 2-ethylbenzenesulfonic acid (EBSA), which has good solubility in organic solvents, in order to improve the performance of organic field effect transistors (OFET). The EBSA doping ratio was varied up to 1.0 wt % because the semiconducting property of P3HT could be lost by higher level doping. The doping reaction was confirmed by the emerged absorption peak at the wavelength of ~970 nm and the shifted S2p peak (X-ray photoelectron spectroscopy), while the ionization potential and nanostructure of P3HT films was slightly affected by the EBSA doping. Interestingly, the EBSA doping delivered significantly improved hole mobility because of the greatly enhanced drain current of OFETs by the presence of the permanently charged parts in the P3HT chains. The hole mobility after the EBSA doping was increased by the factor of 55-86 times depending on the regioregularity at the expense of low on/off ratio in the case of unoptimized devices, while the optimized devices showed ~10 times increased hole mobility by the 1.0 wt % EBSA doping with the greatly improved on/off ratio even though the source and drain electrodes were made using relatively cheaper silver instead of gold.
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Affiliation(s)
- Sungho Nam
- Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea
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27
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Hemgesberg M, Ohlmann DM, Schmitt Y, Wolfe MR, Müller MK, Erb B, Sun Y, Gooßen LJ, Gerhards M, Thiel WR. Simple Access to Sol-Gel Precursors Bearing Fluorescent Aromatic Core Units. European J Org Chem 2012. [DOI: 10.1002/ejoc.201200076] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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28
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Wei Z, Xi H, Dong H, Wang L, Xu W, Hu W, Zhu D. Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor. ACTA ACUST UNITED AC 2010. [DOI: 10.1039/b918874f] [Citation(s) in RCA: 26] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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29
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Fukui A, Hattori K, Hu Y, Shiotsuki M, Sanda F, Masuda T. Synthesis, characterization, and high gas permeability of poly(diarylacetylene)s having fluorenyl groups. POLYMER 2009. [DOI: 10.1016/j.polymer.2009.06.064] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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