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Sharma A, Acharya V, Marothya H, Singh SV, Kumar S, Pal BN. High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li 5AlO 4 Metal Oxide Solution Processing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43682-43693. [PMID: 39121184 DOI: 10.1021/acsami.4c05539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2024]
Abstract
Metal oxide materials processed using solution methods have garnered significant attention due to their ability to efficiently and affordably create transparent insulating layers or active channel layers on various substrates for thin-film transistors (TFTs) used in modern electronics. The key properties of TFTs largely depend on how charge carriers behave near the thin layer at the semiconductor and dielectric interface. Effectively controlling these characteristics offers a straightforward yet effective approach to enhancing device performance. In this study, we propose a novel strategy utilizing atmospheric pressure plasma (APP) treatment to modulate the electrical properties of dielectric thin films and the interfaces between dielectric and semiconductor layers in TFTs processed by using solution methods. Through APP exposure, significant improvements in key TFT parameters were achieved for solution-processed TFTs. Interface states have been reduced from 1013 to 1011 cm-2, and the on/off current ratio has increased from 103 to 106 while maintaining a high field-effect mobility of 34 cm2 V-1 s-1. Additionally, UV-visible spectroscopy and X-ray analysis have confirmed the effectiveness of APP treatment in controlling interface states and traps, leading to overall performance enhancements in the TFTs. Furthermore, our experimental findings have been systematically validated using technology computer-aided design (TCAD) simulations of fabricated TFTs.
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Affiliation(s)
- Anand Sharma
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, United States
- School of Materials Science and Technology, Indian Institute of Technology (BHU), Varanasi 221 005, India
| | - Vishwas Acharya
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
| | - Himanshu Marothya
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
| | - Satya Veer Singh
- Department of Chemistry, Indian Institute of Technology Kanpur, Kalyanpur, Kanpur 208 016, India
| | - Sandeep Kumar
- Department of Physics, Motilal Nehru National Institute of Technology Allahabad, Prayagraj 211 004, India
| | - Bhola Nath Pal
- School of Materials Science and Technology, Indian Institute of Technology (BHU), Varanasi 221 005, India
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2
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Kim A, Ahn Y, Li W, Park SH, Cho MJ, Choi DH, Yang H. Stretchable Semiconducting Polymers with Hydrogen-Bonding-Capable Conjugation Breakers: Synthesis and Application in Organic Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58663-58672. [PMID: 38064280 DOI: 10.1021/acsami.3c12057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
Diketopyrrolopyrrole (DPP)-based conjugated copolymers are important organic semiconductors for applications in high-efficiency organic thin-film transistors (OTFTs). However, the direct application of these polymers with rigid backbones in stretchable devices has limitations. In this study, we designed and synthesized three kinds of DPPBT-based copolymers, DPPBT-A1, DPPBT-A3, and DPPBT-A5, which have amide-coupled alkylene conjugation breakers capable of hydrogen bonding. Linkers with different segment lengths were copolymerized with DPP and bithiophene (BT) backbone units. A DPP-based copolymer with alternating BT moieties, DPPBT, was synthesized as a reference fully conjugated copolymer. The synthesized polymers with freely rotational backbone linkers have sufficient flexibility to develop ordered phase domains, even in thin films, in comparison to the reference copolymer. However, the introduction of the conjugation breakers, which disconnect the intramolecular π-π overlapping, tends to decrease the hole mobility (μ) from 0.76 to 0.20 cm2 V-1 s-1 in the corresponding OTFT devices. The TFT fabricated using DPPBT-A3 showed a mobility of 0.50 cm2 V-1 s-1, and the mobility value did not show a significant change even when elongated by more than 50%. Therefore, the molecular design strategy of introducing amide-coupled alkylene conjugation breakers into conjugated polymer chains can contribute significantly to the development of high-mobility stretchable conjugated polymers in future.
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Affiliation(s)
- Aesun Kim
- Department of Chemistry, Research Institute for Natural Sciences, Korea University, Seoul 02841, South Korea
| | - Yooseong Ahn
- Department of Chemical Engineering, Inha University, Incheon 22212, South Korea
| | - Wenhao Li
- Department of Chemical Engineering, Inha University, Incheon 22212, South Korea
| | - Su Hong Park
- Department of Chemistry, Research Institute for Natural Sciences, Korea University, Seoul 02841, South Korea
| | - Min Ju Cho
- Department of Chemistry, Research Institute for Natural Sciences, Korea University, Seoul 02841, South Korea
| | - Dong Hoon Choi
- Department of Chemistry, Research Institute for Natural Sciences, Korea University, Seoul 02841, South Korea
| | - Hoichang Yang
- Department of Chemical Engineering, Inha University, Incheon 22212, South Korea
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3
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Choi J, Kim MJ, Kim JY, Lee EK, Lee C, Park Y, Kang J, Park JI, Cho BJ, Im SG. The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin-Film Transistors (OTFTs). SMALL METHODS 2023; 7:e2300628. [PMID: 37527002 DOI: 10.1002/smtd.202300628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/08/2023] [Indexed: 08/03/2023]
Abstract
The interface between dielectric and organic semiconductor is critically important in determining organic thin-film transistor (OTFT) performance. Surface polarity of the dielectric layer can hinder charge transport characteristics, which has restricted utilization of polymeric dielectric materials containing polar functional groups. Herein, the electrical characteristics of OTFTs are analyzed depending on the alkyl chain length of organic semiconductors and surface polarity of polymer dielectrics. High-performance dibenzothiopheno[6,5-b:6',5'-f]thieno[3,2-b]thiophene (DBTTT) and newly synthesized its alkylated derivatives (C6-DBTTT and C10-DBTTT) are utilized as organic semiconductors. As dielectric layers, non-polar poly(1,3,5-trimethyl-1,3,5-trivinylcyclitrisiloxane) (pV3D3) and poly(2-cyanoethyl acrylate-co-diethylene glycol divinyl ether) [p(CEA-co-DEGDVE)] with polar cyanide functionality are utilized. The fabricated OTFTs with pV3D3 commonly exhibit the excellent charge transport characteristics. In addition, the OTFT performance is improved with lengthening the alkyl chain in organic semiconductors, which can be attributed to the molecular orientation of semiconductors. On the other hand, non-alkylated DBTTT OTFTs with polar p(CEA-co-DEGDVE) show relatively poor electrical characteristics, while their performance is drastically enhanced with the alkylated DBTTTs. The ultraviolet photoelectron spectroscopy (UPS) reveals that surface polarity of the dielectric layer can be abated with alkyl chain in organic semiconductors. It is believed that this study can provide a useful insight to optimize dielectric/semiconductor interface to achieve high-performance OTFTs.
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Affiliation(s)
- Junhwan Choi
- Department of Chemical Engineering, Dankook University, 152 Jukjeon-ro, Yong-in, Gyeonggi-do, 16890, Republic of Korea
| | - Min Ju Kim
- Department of Electronics and Electrical Engineering, Dankook University, 152 Jukjeon-ro, Yong-in, Gyeonggi-do, 16890, Republic of Korea
| | - Joo-Young Kim
- Organic Material Lab., Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Eun Kyung Lee
- Organic Material Lab., Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Youngkeun Park
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Juyeon Kang
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jeong-Il Park
- Organic Material Lab., Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Byung Jin Cho
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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Takahashi S, Uchida S, Jayaweera PVV, Kaneko S, Segawa H. Impact of compact TiO 2 interface modification on the crystallinity of perovskite solar cells. Sci Rep 2023; 13:16068. [PMID: 37752239 PMCID: PMC10522660 DOI: 10.1038/s41598-023-43395-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 09/22/2023] [Indexed: 09/28/2023] Open
Abstract
The effect of TiO2 interfacial morphology on perovskite crystallinity was investigated by modifying the micro and nanoscale surface roughness of compact TiO2. While surface treatments of the compact TiO2 layer are recognized as effective strategies to enhance the photovoltaic performance of perovskite solar cells, the discussion regarding the crystallinity of perovskite atop TiO2 has been limited. In this study, we explored the impact of micro and nano scale interface morphology on perovskite crystal formation and its subsequent effects on device performance. Surprisingly, despite the absence of noticeable voids at the interface between the compact TiO2 and perovskite layers, the perovskite crystal morphology exhibited significant improvement following either micro or nanoscale interfacial modification. This enhancement ultimately led to improved photoconversion efficiency and reduced I-V hysteresis. These results emphasize the importance of underlayer surface morphology in the perovskite crystallization and suggest that the presence of grain boundaries within the perovskite layer may also contribute to I-V hysteresis in perovskite solar cells.
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Affiliation(s)
- Saemi Takahashi
- Research Association for Technology Innovation of Organic Photovoltaics (RATO), Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, Japan
- Department of General Systems Studies, Graduate School of Arts and Sciences, The University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo, 153-8902, Japan
| | - Satoshi Uchida
- Research Center for Advanced Science and Technology, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, Japan.
| | | | - Shoji Kaneko
- SPD Laboratory, Inc., Johoku 2-35-1, Naka-ku, Hamamatsu, 432-8011, Japan
| | - Hiroshi Segawa
- Research Association for Technology Innovation of Organic Photovoltaics (RATO), Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, Japan.
- Research Center for Advanced Science and Technology, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, Japan.
- Department of General Systems Studies, Graduate School of Arts and Sciences, The University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo, 153-8902, Japan.
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5
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Li L, Liu X, Guo J, Ji H, Zhang F, Lou Z, Qin L, Hu Y, Hou Y, Teng F. Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer. J Phys Chem Lett 2023; 14:2223-2233. [PMID: 36820508 DOI: 10.1021/acs.jpclett.3c00072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The fabrication of organic-inorganic perovskite field-effect transistors (FETs) with polymer gate dielectrics is challenging because of the solvent corrosion and wettability issues at interfaces. A few polymers have been integrated into perovskite transistors; however, these devices have high operating voltages due to low dielectric constants. Herein, poly(vinylidenefluoride-co-trifluoroethylene) (PVDF-TrFE) with a high dielectric constant is introduced into bottom-gate phenylethylammonium tin iodide perovskite [(PEA)2SnI4] FETs. Polytetrafluoroethylene (PTFE) and cross-linked poly(4-vinylphenol) (PVP) (CL-PVP) are used to address the issues of solvent corrosion and wettability. We design the PVDF-TrFE/PTFE and PVDF-TrFE/PTFE/CL-PVP dielectric layers, where the ferroelectric properties of PVDF-TrFE are reduced by PTFE. The (PEA)2SnI4 FETs operate at relatively low gate voltages, exhibiting good overall performance with average hole mobilities of 0.42 and 0.36 cm2 V-1 s-1. Our findings provide a feasible strategy for constructing low-operating-voltage perovskite FETs with large-dielectric-constant ferroelectric polymers as gate dielectrics by a solution processing technique.
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Affiliation(s)
- Longtao Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Xin Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Junhan Guo
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Hongyu Ji
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Fan Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Zhidong Lou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Liang Qin
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Yufeng Hu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Yanbing Hou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Feng Teng
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
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6
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Brixi S, Radford CL, Tousignant MN, Peltekoff AJ, Manion JG, Kelly TL, Lessard BH. Poly(ionic liquid) Gating Materials for High-Performance Organic Thin-Film Transistors: The Role of Block Copolymer Self-Assembly at the Semiconductor Interface. ACS APPLIED MATERIALS & INTERFACES 2022; 14:40361-40370. [PMID: 35998386 DOI: 10.1021/acsami.2c07912] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The widespread realization of wearable electronics requires printable active materials capable of operating at low voltages. Polymerized ionic liquid (PIL) block copolymers exhibit a thickness-independent double-layer capacitance that makes them a promising gating medium for the development of organic thin-film transistors (OTFTs) with low operating voltages and high switching speed. PIL block copolymer structure and self-assembly can influence ion conductivity and the resulting OTFT performance. In an OTFT, self-assembly of the PIL gate on the semiconducting polymer may differ from bulk self-assembly, which would directly influence electrical double-layer formation. To this end, we used poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as a model semiconductor for our OTFTs, on which our PILs exhibited self-assembly. In this study, we explore this critical interface by grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) of P(NDI2OD-T2) and a series of poly(styrene)-b-poly(1-(4-vinylbenzyl)-3-butylimidazolium-random-poly(ethylene glycol) methyl ether methacrylate) (poly(S)-b-poly(VBBI+[X]-r-PEGMA)) block copolymers with varying PEGMA/VBBI+ ratios and three different mobile anions (where X = TFSI-, PF6-, or BF4-). We investigate the thin-film self-assembly of block copolymers as a function of device performance. Overall, a mixed orientation at the interface leads to improved device performance, while predominantly hexagonal packing leads to nonfunctional devices, regardless of the anion present. These PIL gated OTFTs were characterized with a threshold voltage below 1 V, making understanding of their structure-property relationships crucial to enabling the further development of high-performance gating materials.
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Affiliation(s)
- Samantha Brixi
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario K1N 6N5, Canada
| | - Chase L Radford
- Department of Chemistry, University of Saskatchewan, 110 Science Place, Saskatoon, Saskatchewan S7N 5C9, Canada
| | - Mathieu N Tousignant
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario K1N 6N5, Canada
| | - Alexander J Peltekoff
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario K1N 6N5, Canada
| | - Joseph G Manion
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario K1N 6N5, Canada
| | - Timothy L Kelly
- Department of Chemistry, University of Saskatchewan, 110 Science Place, Saskatoon, Saskatchewan S7N 5C9, Canada
| | - Benoît H Lessard
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario K1N 6N5, Canada
- School of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward Ave. Ottawa, Ontario K1N 6N5, Canada
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7
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Choi J, Lee C, Kang J, Lee C, Lee SM, Oh J, Choi SY, Im SG. A Sub-20 nm Organic/Inorganic Hybrid Dielectric for Ultralow-Power Organic Thin-Film Transistor (OTFT) With Enhanced Operational Stability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203165. [PMID: 36026583 DOI: 10.1002/smll.202203165] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Revised: 07/15/2022] [Indexed: 06/15/2023]
Abstract
Organic/inorganic hybrid materials are utilized extensively as gate dielectric layers in organic thin-film transistors (OTFTs). However, inherently low dielectric constant of organic materials and lack of a reliable deposition process for organic layers hamper the broad application of hybrid dielectric materials. Here, a universal strategy to synthesize high-k hybrid dielectric materials by incorporating a high-k polymer layer on top of various inorganic layers generated by different fabrication methods, including AlOx and HfOx , is presented. Those hybrid dielectrics commonly exhibit high capacitance (>300 nF·cm-2 ) as well as excellent insulating properties. A vapor-phase deposition method is employed for precise control of the polymer film thickness. The ultralow-voltage (<3 V) OTFTs are demonstrated based on the hybrid dielectric layer with 100% yield and uniform electrical characteristics. Moreover, the exceptionally high stability of OTFTs for long-term operation (current change less than 5% even under 30 h of voltage stress at 2.0 MV·cm-1 ) is achieved. The hybrid dielectric is fully compatible with various substrates, which allows for the demonstration of intrinsically flexible OTFTs on the plastic substrate. It is believed that this approach for fabricating hybrid dielectrics by introducing the high-k organic material can be a promising strategy for future low-power, flexible electronics.
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Affiliation(s)
- Junhwan Choi
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Chungryeol Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Juyeon Kang
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seung Min Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jungyeop Oh
- School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
- KAIST Institute for NanoCentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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8
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Chen R, Yan Y, Wang X, Chang C, Zhao Y, Liu Y, Wei D. Patterning an Erosion-Free Polymeric Semiconductor Channel for Reliable All-Photolithography Organic Electronics. J Phys Chem Lett 2022; 13:7673-7680. [PMID: 35960015 DOI: 10.1021/acs.jpclett.2c01982] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Reliable patterning of organic semiconductors (OSCs) with high uniformity is essential to all-photolithography organic electronics. However, the majority of cross-linked OSCs experience performance fluctuations after photolithography because of the inherent vulnerability of low-ordered regions. Herein, we develop an anti-solution penetration photolithography process to achieve the reliable patterning of the OSC layer for all-photolithography integrated organic electronics. Using a thick and highly cross-linked semiconductor film and a low-solubility developer, an erosion-free semiconductor channel is obtained with a high mobility of up to 1.254 cm2 V-1 s-1 and a uniform threshold voltage close to zero. Compared with existing all-photolithography organic circuits, the unit logic gate area consumption is lower by 1-3 orders of magnitude at 0.0069 mm2, while the transistor density is higher by 1-2 orders of magnitude at 6780 Tr cm-2. The miniaturized organic inverters maintain uncompromised voltage gains, and the 15-stage organic ring oscillators feature higher oscillation frequencies, making them promising for applications in wide-ranging integrated organic circuits.
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Affiliation(s)
- Renzhong Chen
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yongkun Yan
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Xuejun Wang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Cheng Chang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yan Zhao
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
- Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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9
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Kang Y, Kwak DH, Kwon JE, Kim BG, Lee WH. NO 2-Affinitive Conjugated Polymer for Selective Sub-Parts-Per-Billion NO 2 Detection in a Field-Effect Transistor Sensor. ACS APPLIED MATERIALS & INTERFACES 2021; 13:31910-31918. [PMID: 34197091 DOI: 10.1021/acsami.1c05681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Conjugated polymers (CPs) have provided versatile semiconducting implements for the development of soft electronic devices. When three CPs with the same conjugated framework but different side chains were adopted in the field-effect transistor (FET) sensor for NO2 detection, the response to NO2 showed an opposite tendency to the charge carrier mobility of each CP. Morphological and structural characterizations revealed that the flexible glycol side chain enhances NO2 affinity as well as prevents the formation of lamellar stacking of the CP chains, thereby providing routes for the facile diffusion of NO2. Additionally, theoretical calculations for CP-NO2 complex formation at the molecular level support the relatively low energy barrier for inter-chain transition of NO2 between the glycol-based conjugated frameworks, which implies the spontaneous internal diffusion of NO2 to the semiconductor-dielectric interface in the FET-based sensor. As a result, the CP with a NO2-affinitive morphology exhibited an exceptional sensitivity of 13.8%/ppb upon NO2 (100 ppb) exposure for 50 s and provided excellent selectivity to the FET-based sensor toward other environmentally abundant harmful gases, such as SO2, CO2, and NH3. In particular, the theoretic limit of detection reached down to 0.24 ppb, which is the lowest value ever reported for organic FET-based NO2 gas sensors.
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Affiliation(s)
- Yeongkwon Kang
- Department of Organic and Nano System Engineering, Konkuk University, Seoul 05029, Republic of Korea
| | - Do Hun Kwak
- Department of Organic and Nano System Engineering, Konkuk University, Seoul 05029, Republic of Korea
| | - Ji Eon Kwon
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
| | - Bong-Gi Kim
- Department of Organic and Nano System Engineering, Konkuk University, Seoul 05029, Republic of Korea
- Division of Chemical Engineering, Konkuk University, Seoul 05029, Republic of Korea
| | - Wi Hyoung Lee
- Department of Organic and Nano System Engineering, Konkuk University, Seoul 05029, Republic of Korea
- Division of Chemical Engineering, Konkuk University, Seoul 05029, Republic of Korea
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10
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Cranston RR, Lessard BH. Metal phthalocyanines: thin-film formation, microstructure, and physical properties. RSC Adv 2021; 11:21716-21737. [PMID: 35478816 PMCID: PMC9034105 DOI: 10.1039/d1ra03853b] [Citation(s) in RCA: 37] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Accepted: 06/11/2021] [Indexed: 11/21/2022] Open
Abstract
Metal phthalocyanines (MPcs) are an abundant class of small molecules comprising of a highly conjugated cyclic structure with a central chelated metal ion. Due to their remarkable chemical, mechanical, and thermal stability MPcs have become popular for a multitude of applications since their discovery in 1907. The potential for peripheral and axial functionalization affords structural tailoring to create bespoke MPc complexes for various next generation applications. Specifically, thin-films of MPcs have found promising utility in medical and electronic applications where the need to understand the relationship between chemical structure and the resulting thin-film properties is an important ongoing field. This review aims to compile the fundamental principles of small molecule thin-film formation by physical vapour deposition and solution processing focusing on the nucleation and growth of crystallites, thermodynamic and kinetic considerations, and effects of deposition parameters on MPc thin-films. Additionally, the structure-property relationship of MPc thin-films is examined by film microstructure, morphology and physical properties. The topics discussed in this work will elucidate the foundations of MPc thin-films and emphasize the critical need for not only molecular design of new MPcs but the role of their processing in the formation of thin-films and how this ultimately governs the performance of the resulting application.
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Affiliation(s)
- Rosemary R Cranston
- University of Ottawa, Department of Chemical and Biological Engineering 161 Louis Pasteur Ottawa ON Canada
| | - Benoît H Lessard
- University of Ottawa, Department of Chemical and Biological Engineering 161 Louis Pasteur Ottawa ON Canada
- University of Ottawa, School of Electrical Engineering and Computer Science 800 King Edward Ave. Ottawa ON Canada
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11
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Guo S, Wang Z, Chen X, Li L, Li J, Ji D, Li L, Hu W. Low‐voltage polymer‐dielectric‐based organic field‐effect transistors and applications. NANO SELECT 2021. [DOI: 10.1002/nano.202100051] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
Affiliation(s)
- Shujing Guo
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University Tianjin China
- Collaborative Innovation Center of Chemical Science and Engineering Tianjin China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Lin Li
- Institute of Molecular Plus Tianjin University Tianjin China
| | - Jie Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
- Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Fuzhou China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University Tianjin China
- Collaborative Innovation Center of Chemical Science and Engineering Tianjin China
- Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Fuzhou China
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12
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The Quinonoid Zwitterion Interlayer for the Improvement of Charge Carrier Mobility in Organic Field-Effect Transistors. Polymers (Basel) 2021; 13:polym13101567. [PMID: 34068290 PMCID: PMC8153292 DOI: 10.3390/polym13101567] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 05/06/2021] [Accepted: 05/10/2021] [Indexed: 11/25/2022] Open
Abstract
The interface between the semiconductor and the dielectric layer plays a crucial role in organic field-effect transistors (OFETs) because it is at the interface that charge carriers are accumulated and transported. In this study, four zwitterionic benzoquinonemonoimine dyes featuring alkyl and aryl N-substituents were used to cover the dielectric layers in OFET structures. The best interlayer material, containing aliphatic side groups, increased charge carrier mobility in the measured systems. This improvement can be explained by the reduction in the number of the charge carrier trapping sites at the dielectric active layer interface from 1014 eV−1 cm−2 to 2 × 1013 eV−1 cm−2. The density of the traps was one order of magnitude lower compared to the unmodified transistors. This resulted in an increase in charge carrier mobility in the tested poly [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPPDTT)-based transistors to 5.4 × 10−1 cm2 V−1 s−1.
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13
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Kwon HJ, Tang X, Shin S, Hong J, Jeong W, Jo Y, An TK, Lee J, Kim SH. Facile Photo-cross-linking System for Polymeric Gate Dielectric Materials toward Solution-Processed Organic Field-Effect Transistors: Role of a Cross-linker in Various Polymer Types. ACS APPLIED MATERIALS & INTERFACES 2020; 12:30600-30615. [PMID: 32527080 DOI: 10.1021/acsami.0c04356] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Energy-efficient solution-processed organic field-effect transistors (OFETs) are highly sought after in the low-cost printing industry as well as for the manufacture of flexible and other next-generation devices. The fabrication of such electronic devices requires high-functioning insulating materials that are chemically and mechanically robust to avoid lowering insulating properties during the device fabrication process or utilization of devices. In this study, we report a facile, fluorinated, UV-assisted cross-linker series using a fluorophenyl azide (FPA), which reacts with the C-H groups of a conventional polymer. This demonstrates the application of the cross-linked films in OFET gate dielectrics. The effects of the cross-linkable chemical structure of the FPA series on the cross-linking chemistry, photopatternability, and dielectric properties of the resulting films are investigated for low/high-k or amorphous/crystalline polymeric gate dielectric materials. The characteristics of insulating layers and behavior of OFETs containing these cross-linked gate dielectrics (for example, leakage current density (J), hysteresis, and charge trap density) depend on the polymer type. Furthermore, an organic-based complementary inverter and various printable OFETs with excellent electrical characteristics are successfully fabricated. Thus, these reported cross-linkers that enable the solution process and patterning of well-developed conventional polymer dielectric materials are promising for the realization of a more sustainable next-generation industrial technology for flexible and printable devices.
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Affiliation(s)
- Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Seongjun Shin
- Department of IT Energy Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jisu Hong
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Wonkyo Jeong
- Department of IT Energy Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Yohan Jo
- Department of IT Energy Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Tae Kyu An
- Department of IT Energy Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jihoon Lee
- Department of IT Energy Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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14
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Schweicher G, Garbay G, Jouclas R, Vibert F, Devaux F, Geerts YH. Molecular Semiconductors for Logic Operations: Dead-End or Bright Future? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905909. [PMID: 31965662 DOI: 10.1002/adma.201905909] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Revised: 11/18/2019] [Indexed: 05/26/2023]
Abstract
The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V-1 s-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.
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Affiliation(s)
- Guillaume Schweicher
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Guillaume Garbay
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Rémy Jouclas
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - François Vibert
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Félix Devaux
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Yves H Geerts
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
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15
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Kim MJ, Pak K, Choi J, Lee TI, Hwang WS, Im SG, Cho BJ. Ultrathin ZrO x-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics. ACS APPLIED MATERIALS & INTERFACES 2019; 11:44513-44520. [PMID: 31725253 DOI: 10.1021/acsami.9b15363] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A one-step synthesis method is introduced and used to form an ultrathin, homogeneous organic-inorganic hybrid dielectric film with a high dielectric constant (high-k), based on initiated chemical vapor deposition. The hybrid dielectric is synthesized from tetrakis-dimethyl-amino-zirconium and 2-hydroxyethyl methacrylate, which are a high-k inorganic material and a soft organic material, respectively. A detailed material analysis on the synthesized ZrOx-organic hybrid (Zr-hybrid) is performed. The Zr-hybrid dielectric has a high dielectric constant of nine, leading to a film equivalent oxide thickness (EOT) as low as 3.2 nm, which is the lowest EOT obtained from a flexible dielectric layer to date. The leakage current density (J) is no larger than 6 × 10-7 A/cm2 at 2 MV/cm, and the breakdown field (Ebreak) was ∼3.3 MV/cm. The J of the Zr-hybrid dielectric remains almost constant even under the 2.5% strain condition, while that of the ZrO2 dielectric breaks down electrically at a tensile strain of less than 1.0%. The Zr-hybrid dielectric shows an energy band gap in the range of 5.2-5.4 eV and exhibits a sufficient valence band offset of around 3.0 eV with a pentacene organic semiconductor. The gate stack of the Zr-hybrid dielectric/pentacene semiconductor shows decent metal-oxide-semiconductor field-effect transistor performance even under a tensile strain of 1.67%, indicating that the Zr-hybrid is a promising gate dielectric for advanced flexible electronic applications.
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Affiliation(s)
| | | | | | | | - Wan Sik Hwang
- Department of Materials Engineering , Korea Aerospace University , Goyang 10540 , Gyeonggi-do , Republic of Korea
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16
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17
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Un H, Wang J, Pei J. Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field-Effect Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900375. [PMID: 31637154 PMCID: PMC6794634 DOI: 10.1002/advs.201900375] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2019] [Revised: 08/02/2019] [Indexed: 05/20/2023]
Abstract
Over the past three decades, the mobility of organic field-effect transistors (OFETs) has been improved from 10-5 up to over 10 cm2 V-1 s-1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current-voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double-slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state-of-the-art OFETs, considerable possible approaches are also provided for future OFETs.
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Affiliation(s)
- Hio‐Ieng Un
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
| | - Jie‐Yu Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
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18
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Lill AT, Eftaiha AF, Huang J, Yang H, Seifrid M, Wang M, Bazan GC, Nguyen TQ. High-k Fluoropolymer Gate Dielectric in Electrically Stable Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:15821-15828. [PMID: 30964984 DOI: 10.1021/acsami.8b20827] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A detailed study of a high-k fluoropolymer gate dielectric material, poly(vinylidene fluoride- co-hexafluoropropylene) [P(VDF-HFP)], is presented as a guide to achieve low operational voltage and electrically stable device performance. The large dipole moment of C-F dipoles in P(VDF-HFP) is responsible for its high dielectric constant as well as its potentially ferroelectric behavior that must be minimized to avoid hysteretic current-voltage characteristics. A range of material grades and processing conditions are explored and are shown to have a significant effect on the degree of hysteresis observed in device-transfer characteristics. The percentage of HFP monomer in the P(VDF-HFP) dielectric has an effect on gate-dependent mobility induced by disorder at the semiconductor-dielectric interface. Most importantly, we present the considerations that must be made to achieve optimal performance in multiple device architectures of organic field-effect transistors when using P(VDF-HFP) as a dielectric layer.
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Affiliation(s)
- Alexander T Lill
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry , University of California at Santa Barbara , Santa Barbara , California 93106 , United States
| | - Ala'a F Eftaiha
- Department of Chemistry , The Hashemite University , Zarqa 13115 , Jordan
| | - Jianfei Huang
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry , University of California at Santa Barbara , Santa Barbara , California 93106 , United States
| | - Hao Yang
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry , University of California at Santa Barbara , Santa Barbara , California 93106 , United States
| | - Martin Seifrid
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry , University of California at Santa Barbara , Santa Barbara , California 93106 , United States
| | - Ming Wang
- Center for Advanced Low-Dimension Materials , Donghua University , Shanghai 201620 , China
| | - Guillermo C Bazan
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry , University of California at Santa Barbara , Santa Barbara , California 93106 , United States
| | - Thuc-Quyen Nguyen
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry , University of California at Santa Barbara , Santa Barbara , California 93106 , United States
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19
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He M, Chen X, Liu D, Wei D. Two-dimensional self-healing hydrogen-bond-based supramolecular polymer film. CHINESE CHEM LETT 2019. [DOI: 10.1016/j.cclet.2019.01.008] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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20
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Lin FJ, Chen HH, Tao YT. Molecularly Aligned Hexa- peri-hexabenzocoronene Films by Brush-Coating and Their Application in Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:10801-10809. [PMID: 30793587 DOI: 10.1021/acsami.9b00873] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The facile Chinese brush-coating method was used to prepare oriented thin films of hexa- peri-hexabenzocoronene (HBC) derivatives on the silicon substrate. As a result of the directional solution-coating, the D3 h-symmetry (HBC-1,3,5-Ph-C12) and the C1-symmetry (HBC-1,2,4-Ph-C12) derivatives displayed an anisotropic alignment, with mostly edge-on orientation on SiO2 surfaces modified with various silane-based monolayers. On these silane-modified surfaces, the higher symmetry molecule HBC-1,3,5-Ph-C12 developed a hexagonally packed superstructure, which provided greater π orbital overlap and presumably the electronic coupling between neighboring molecules. In particular, the use of an octyltrichlorosilane (OTS)-modified surface enabled brush-coated thin films to have higher anisotropic orientation, crystallinity, and favorable molecular arrangement. In contrast, the growth of the hexagonal packing of low-symmetry derivative HBC-1,2,4-Ph-C12 was only achieved on the phenyltrichlorosilane and OTS surfaces. Thin-film transistors based on these brush-coated films gave a maximum mobility of 0.1 and 0.056 cm2 V-1 s-1, which are 2 orders of magnitude improvement over the devices with unoriented films prepared by spin-coating. The results indicate that the molecular packing of discotic liquid crystals on the silane-modified surface is sensitively influenced by the molecular symmetry, which affects intermolecular interactions as well as molecule/surface interactions. This study provides a simple way to fabricate aligned films for HBC derivatives for transistor application.
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Affiliation(s)
- Fang-Ju Lin
- Institute of Chemistry , Academia Sinica , 115 Taipei , Taiwan
| | - Hsiu-Hui Chen
- Department of Chemistry , National Kaohsiung Normal University , 824 Kaohsiung , Taiwan
| | - Yu-Tai Tao
- Institute of Chemistry , Academia Sinica , 115 Taipei , Taiwan
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21
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Rullyani C, Sung CF, Lin HC, Chu CW. Flexible Organic Thin Film Transistors Incorporating a Biodegradable CO 2-Based Polymer as the Substrate and Dielectric Material. Sci Rep 2018; 8:8146. [PMID: 29802298 PMCID: PMC5970150 DOI: 10.1038/s41598-018-26585-0] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2018] [Accepted: 05/15/2018] [Indexed: 01/19/2023] Open
Abstract
Employing CO2-based polymer in electronic applications should boost the consumption of CO2 feedstocks and provide the potential for non-permanent CO2 storage. In this study, polypropylene carbonate (PPC) is utilized as a dielectric and substrate material for organic thin film transistors (OTFTs) and organic inverter. The PPC dielectric film exhibits a surface energy of 47 mN m−1, a dielectric constant of 3, a leakage current density of less than 10−6 A cm−2, and excellent compatibility with pentacene and PTCDI-C8 organic semiconductors. Bottom-gate top-contact OTFTs are fabricated using PPC as a dielectric; they exhibits good electrical performance at an operating voltage of 60 V, with electron and hole mobilities of 0.14 and 0.026 cm2 V−1 s−1, and on-to-off ratios of 105 and 103, respectively. The fabricated p- and n-type transistors were connected to form a complementary inverter that operated at supply voltages of 20 V with high and low noise margins of 85 and 69%, respectively. The suitability of PPC as a substrate is demonstrated through the preparation of PPC sheets by casting method. The fabricated PPC sheets has a transparency of 92% and acceptable mechanical properties, yet they biodegraded rapidly through enzymatic degradation when using the lipase from Rhizhopus oryzae.
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Affiliation(s)
- Cut Rullyani
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan (ROC)
| | - Chao-Feng Sung
- Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu, 300, Taiwan (ROC)
| | - Hong-Cheu Lin
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan (ROC).
| | - Chih-Wei Chu
- Research Center for Applied Science Academia Sinica, Taipei, 115, Taiwan (ROC). .,College of Engineering, Chang Gung University, Taoyuan, 333, Taiwan (ROC).
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22
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Zhou S, Tang Q, Tian H, Zhao X, Tong Y, Barlow S, Marder SR, Liu Y. Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:15943-15951. [PMID: 29687704 DOI: 10.1021/acsami.8b02304] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.
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Affiliation(s)
- Shujun Zhou
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Hongkun Tian
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry , Chinese Academy of Sciences , Changchun 130022 , China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Stephen Barlow
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics , Georgia Institute of Technology , Atlanta , Georgia 30332-0400 , United States
| | - Seth R Marder
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics , Georgia Institute of Technology , Atlanta , Georgia 30332-0400 , United States
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
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23
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Giacometti JA. Constant-current corona triode adapted and optimized for the characterization of thin dielectric films. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2018; 89:055109. [PMID: 29864870 DOI: 10.1063/1.5020795] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
This work describes an enhanced corona triode with constant current adapted to characterize the electrical properties of thin dielectric films used in organic electronic devices. A metallic grid with a high ionic transparency is employed to charge thin films (100 s of nm thick) with a large enough charging current. The determination of the surface potential is based on the grid voltage measurement, but using a more sophisticated procedure than the previous corona triode. Controlling the charging current to zero, which is the open-circuit condition, the potential decay can be measured without using a vibrating grid. In addition, the electric capacitance and the characteristic curves of current versus the stationary surface potential can also be determined. To demonstrate the use of the constant current corona triode, we have characterized poly(methyl methacrylate) thin films with films with thicknesses in the range from 300 to 500 nm, frequently used as gate dielectric in organic field-effect transistors.
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Affiliation(s)
- José A Giacometti
- Instituto de Física de São Carlos, Universidade de São Paulo, USP, 13566-590 São Carlos, SP, Brazil
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24
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Zhang F, Hu Y, Lou Z, Xin X, Zhang M, Hou Y, Teng F. Interface studies of well-controlled polymer bilayers and field-effect transistors prepared by a mixed-solvent method. RSC Adv 2018; 8:11272-11279. [PMID: 35542823 PMCID: PMC9082021 DOI: 10.1039/c7ra13143g] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2017] [Accepted: 03/03/2018] [Indexed: 11/26/2022] Open
Abstract
The properties of semiconductor/dielectric interfaces are crucial to the performance of polymer field-effect transistors. The key to fabricating high-performance polymer transistors by spin-coating is solving solvent corrosion issues, wherein the solvent of the top polymer produces a rough interface or damage on the underlying polymer layer during deposition. Herein, we propose a mixed-solvent method that employs a mixture of an orthogonal solvent of the underlying polymer and a good solvent of the top polymer as the solvent of the top polymer to prepare polymer bilayers and produce a comparative study of the trap density at the semiconductor/dielectric interface of the corresponding transistor. By changing the ratio of orthogonal solvent to good solvent, namely the degree of orthogonality of the mixed solvent with respect to the underlying polymer, the interface and film qualities of polymer bilayers can be well controlled. We applied this method to spin-coat poly(3-hexylthiophene) (P3HT) on poly(methylmethacrylate) (PMMA) with a mixture of cyclohexane (orthogonal solvent) and chloroform (good solvent). The results of morphology characterizations and electrical property studies indicate the optimal ratio of cyclohexane to chloroform for preparing high-quality P3HT/PMMA bilayers for field-effect conduction is 7 : 3. Transistors based on the optimal bilayers with a bottom-gate/top-contact configuration and a long channel length show good performance. The trap density at the P3HT/PMMA interface is evaluated to be 3.6 × 1012 cm−2 eV−1 from the subthreshold swing, characterizing the distribution of the interface trap levels across the bandgap in P3HT. Furthermore, based on deviations from ideality in the capacitance–voltage characteristics of the metal–insulator–semiconductor capacitor in the device, the traps at the interface are found to be acceptor-type, with the trap density determined to be 2.3 × 1011 cm−2. This value is in a good agreement with that estimated from the subthreshold swing. A mixture of an orthogonal solvent of the bottom polymer and a good solvent of the top polymer is used as the solvent of the top layer to prepare polymer bilayers. The trap densities at the semiconductor/dielectric interface of the corresponding transistor are evaluated.![]()
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Affiliation(s)
- Fan Zhang
- Key Laboratory of Luminescence and Optical Information
- Ministry of Education
- Beijing Jiaotong University
- Beijing 100044
- China
| | - Yufeng Hu
- Key Laboratory of Luminescence and Optical Information
- Ministry of Education
- Beijing Jiaotong University
- Beijing 100044
- China
| | - Zhidong Lou
- Key Laboratory of Luminescence and Optical Information
- Ministry of Education
- Beijing Jiaotong University
- Beijing 100044
- China
| | - Xige Xin
- Key Laboratory of Luminescence and Optical Information
- Ministry of Education
- Beijing Jiaotong University
- Beijing 100044
- China
| | - Meng Zhang
- Key Laboratory of Luminescence and Optical Information
- Ministry of Education
- Beijing Jiaotong University
- Beijing 100044
- China
| | - Yanbing Hou
- Key Laboratory of Luminescence and Optical Information
- Ministry of Education
- Beijing Jiaotong University
- Beijing 100044
- China
| | - Feng Teng
- Key Laboratory of Luminescence and Optical Information
- Ministry of Education
- Beijing Jiaotong University
- Beijing 100044
- China
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25
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Stredansky M, Sala A, Fontanot T, Costantini R, Africh C, Comelli G, Floreano L, Morgante A, Cossaro A. On-surface synthesis of a 2D boroxine framework: a route to a novel 2D material? Chem Commun (Camb) 2018; 54:3971-3973. [DOI: 10.1039/c8cc01372a] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
The synthesis of a 2D boroxine covalent framework is described, which exhibits promising morphological and electronic properties.
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Affiliation(s)
- Matus Stredansky
- Dipartimento di Fisica
- Universitá di Trieste
- via A. Valerio 2
- I-34127 Trieste
- Italy
| | - Alessandro Sala
- CNR-IOM Laboratorio TASC
- Basovizza SS-14, km 163.5
- I-34149 Trieste
- Italy
| | - Tommaso Fontanot
- Dipartimento di Fisica
- Universitá di Trieste
- via A. Valerio 2
- I-34127 Trieste
- Italy
| | - Roberto Costantini
- Dipartimento di Fisica
- Universitá di Trieste
- via A. Valerio 2
- I-34127 Trieste
- Italy
| | - Cristina Africh
- CNR-IOM Laboratorio TASC
- Basovizza SS-14, km 163.5
- I-34149 Trieste
- Italy
| | - Giovanni Comelli
- Dipartimento di Fisica
- Universitá di Trieste
- via A. Valerio 2
- I-34127 Trieste
- Italy
| | - Luca Floreano
- CNR-IOM Laboratorio TASC
- Basovizza SS-14, km 163.5
- I-34149 Trieste
- Italy
| | - Alberto Morgante
- Dipartimento di Fisica
- Universitá di Trieste
- via A. Valerio 2
- I-34127 Trieste
- Italy
| | - Albano Cossaro
- CNR-IOM Laboratorio TASC
- Basovizza SS-14, km 163.5
- I-34149 Trieste
- Italy
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26
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Bastatas LD, Moore MD, Slinker JD. The Effect of the Dielectric Constant and Ion Mobility in Light-Emitting Electrochemical Cells. Chempluschem 2017; 83:266-273. [DOI: 10.1002/cplu.201700500] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2017] [Indexed: 11/08/2022]
Affiliation(s)
- Lyndon D. Bastatas
- Department of Physics; The University of Texas at Dallas; 800 West Campbell Road, PHY 36 Richardson TX 75080-3021 USA
| | - Matthew D. Moore
- Department of Chemistry; The University of Texas at Austin; 105 East 24th Street Austin TX 78712 USA
| | - Jason D. Slinker
- Department of Physics; The University of Texas at Dallas; 800 West Campbell Road, PHY 36 Richardson TX 75080-3021 USA
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27
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Kim HJ, Kim H, Yang S, Kwon JY. Grains in Selectively Grown MoS 2 Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13. [PMID: 29057624 DOI: 10.1002/smll.201702256] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2017] [Revised: 08/17/2017] [Indexed: 05/08/2023]
Abstract
Transition metal dichalcogenides (TMDCs) have recently been studied using various synthesis methods, such as chemical vapor deposition for large-scale production. Despite the realization of large-scale production with high material quality, a range of approaches have been made to solve the patterning issue of TMDCs focusing on the application of integrated devices; however, patterning is still under study to accurately represent nanoscale-sized patterns, as well as the desired positions and shapes. Here, an insulating substrate is treated selectively with O2 plasma, and MoS2 growth is induced in the superhydrophilic area. Selectively well-grown MoS2 patterns are confirmed by atomic force microscopy and Raman and photoluminescence spectroscopy. In addition, the grain size, according to the growth size, and grain boundary are analyzed by annual dark field transmission electron microscopy (TEM) and spherical aberration-corrected scanning TEM to confirm the selective growth. An analysis of the device performance and the optical properties reveals an enhancement with increasing grain size. This method presents the path of the growth technique for patterning, as well as the direction that can be applied to devices and integrated circuits.
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Affiliation(s)
- Hyung-Jun Kim
- School of Integrated Technology, Yonsei University, Yeonsu-gu, Incheon, 21983, Republic of Korea
- Yonsei Institute of Convergence Technology, Yeonsu-gu, Incheon, 21983, Republic of Korea
| | - Hojoong Kim
- School of Integrated Technology, Yonsei University, Yeonsu-gu, Incheon, 21983, Republic of Korea
- Yonsei Institute of Convergence Technology, Yeonsu-gu, Incheon, 21983, Republic of Korea
| | - Suk Yang
- School of Integrated Technology, Yonsei University, Yeonsu-gu, Incheon, 21983, Republic of Korea
- Yonsei Institute of Convergence Technology, Yeonsu-gu, Incheon, 21983, Republic of Korea
| | - Jang-Yeon Kwon
- School of Integrated Technology, Yonsei University, Yeonsu-gu, Incheon, 21983, Republic of Korea
- Yonsei Institute of Convergence Technology, Yeonsu-gu, Incheon, 21983, Republic of Korea
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28
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Sun J, Park H, Jung Y, Rajbhandari G, Maskey BB, Sapkota A, Azuma Y, Majima Y, Cho G. Proving Scalability of an Organic Semiconductor To Print a TFT-Active Matrix Using a Roll-to-Roll Gravure. ACS OMEGA 2017; 2:5766-5774. [PMID: 31457835 PMCID: PMC6644715 DOI: 10.1021/acsomega.7b00873] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2017] [Accepted: 08/30/2017] [Indexed: 05/29/2023]
Abstract
Organic semiconductor-based thin-film transistors' (TFTs) charge-carrier mobility has been enhanced up to 25 cm2/V s through the improvement of fabrication methods and greater understanding of the microstructure charge-transport mechanism. To expand the practical feasibility of organic semiconductor-based TFTs, their electrical properties should be easily accessed from the fully printed devices through a scalable printing method, such as a roll-to-roll (R2R) gravure. In this study, four commercially available organic semiconductors were separately formulated into gravure inks. They were then employed in the R2R gravure system (silver ink for printing gate and drain-source electrodes and BaTiO3 ink for printing dielectric layers) for printing 20 × 20 TFT-active matrix with the resolution of 10 pixels per inch on poly(ethylene terephthalate) (PET) foils to attain electrical properties of organic semiconductors a practical printing method. Electrical characteristics (mobility, on-off current ratio, threshold voltage, and transconductance) of the R2R gravure-printed 20 × 20 TFT-active matrices fabricated with organic semiconducting ink were analyzed statistically, and the results showed more than 98% device yield and 50 % electrical variations in the R2R gravure TFT-active matrices along the PET web.
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Affiliation(s)
- Junfeng Sun
- Department
of Printed Electronics Engineering of Sunchon National University, National University, Sunchon 540-742, Korea
| | - Hyejin Park
- Department
of Printed Electronics Engineering of Sunchon National University, National University, Sunchon 540-742, Korea
| | - Younsu Jung
- Department
of Printed Electronics Engineering of Sunchon National University, National University, Sunchon 540-742, Korea
| | - Grishmi Rajbhandari
- Department
of Printed Electronics Engineering of Sunchon National University, National University, Sunchon 540-742, Korea
| | - Bijendra Bishow Maskey
- Department
of Printed Electronics Engineering of Sunchon National University, National University, Sunchon 540-742, Korea
| | - Ashish Sapkota
- Department
of Printed Electronics Engineering of Sunchon National University, National University, Sunchon 540-742, Korea
| | - Yasuo Azuma
- Materials
and Structure Laboratory, Tokyo Institute
of Technology, Yokohama 226-8503, Japan
| | - Yutaka Majima
- Materials
and Structure Laboratory, Tokyo Institute
of Technology, Yokohama 226-8503, Japan
| | - Gyoujin Cho
- Department
of Printed Electronics Engineering of Sunchon National University, National University, Sunchon 540-742, Korea
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29
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Choi J, Joo M, Seong H, Pak K, Park H, Park CW, Im SG. Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2017; 9:20808-20817. [PMID: 28569054 DOI: 10.1021/acsami.7b03537] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A series of high-k, ultrathin copolymer gate dielectrics were synthesized from 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) monomers by a free radical polymerization via a one-step, vapor-phase, initiated chemical vapor deposition (iCVD) method. The chemical composition of the copolymers was systematically optimized by tuning the input ratio of the vaporized CEA and DEGDVE monomers to achieve a high dielectric constant (k) as well as excellent dielectric strength. Interestingly, DEGDVE was nonhomopolymerizable but it was able to form a copolymer with other kinds of monomers. Utilizing this interesting property of the DEGDVE cross-linker, the dielectric constant of the copolymer film could be maximized with minimum incorporation of the cross-linker moiety. To our knowledge, this is the first report on the synthesis of a cyanide-containing polymer in the vapor phase, where a high-purity polymer film with a maximized dielectric constant was achieved. The dielectric film with the optimized composition showed a dielectric constant greater than 6 and extremely low leakage current densities (<3 × 10-8 A/cm2 in the range of ±2 MV/cm), with a thickness of only 20 nm, which is an outstanding thickness for down-scalable cyanide polymer dielectrics. With this high-k dielectric layer, organic thin-film transistors (OTFTs) and oxide TFTs were fabricated, which showed hysteresis-free transfer characteristics with an operating voltage of less than 3 V. Furthermore, the flexible OTFTs retained their low gate leakage current and ideal TFT characteristics even under 2% applied tensile strain, which makes them some of the most flexible OTFTs reported to date. We believe that these ultrathin, high-k organic dielectric films with excellent mechanical flexibility will play a crucial role in future soft electronics.
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Affiliation(s)
- Junhwan Choi
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Munkyu Joo
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyejeong Seong
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kwanyong Pak
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hongkeun Park
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chan Woo Park
- Wearable Device Research Section, Electronics and Telecommunications Research Institute (ETRI) , 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea
| | - Sung Gap Im
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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30
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Shan B, Miao Q. Molecular design of n-type organic semiconductors for high-performance thin film transistors. Tetrahedron Lett 2017. [DOI: 10.1016/j.tetlet.2017.04.023] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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31
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Duan XL, Chen HJ, Huang JY, Liu ZF, Li JK, Yang ZY, Zhang WF, Yu G. Tracking the Evolution of Polymer Interface Films during the Process of Thermal Annealing at the Domain and Single Molecular Levels using Scanning Tunneling Microscopy. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2016; 32:9437-9444. [PMID: 27605160 DOI: 10.1021/acs.langmuir.6b02139] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Structural evolution of polymer (NTZ12) interface films during the process of annealing is revealed at the domain and single molecular levels using the statistical data measured from scanning tunneling microscopy images and through theoretical calculations. First, common features of the interface films are examined. Then, mean values of surface-occupied ratio, size and density of the domain are used to reveal the intrinsic derivation of the respective stages. Formation of new domains is triggered at 70 °C, but domain ripening is not activated. At 110 °C, the speed of formation of new domains is almost balanced by the consumption due to the ripening process. However, formation of new domains is reduced heavily at 150 °C but restarted at 190 °C. At the single molecular level, the ratio of the average length of linear to curved backbones is increased during annealing, whereas the ratios of the total length and the total number of linear to curved skeletons reaches a peak value at 150 °C. The two major conformations of curved backbones for all samples are 120° and 180° bending, but the ripening at 150 °C reduces 180° folding dramatically. Molecular dynamic simulations disclose the fast relaxing process of curved skeletons at high temperature.
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Affiliation(s)
- Xiao-Ling Duan
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences , 19A Yuquanlu, Beijing 100049, P. R. China
| | - Hua-Jie Chen
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, P. R. China
| | - Jian-Yao Huang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, P. R. China
| | - Zhi-Fei Liu
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences , 19A Yuquanlu, Beijing 100049, P. R. China
| | - Jin-Kuo Li
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences , 19A Yuquanlu, Beijing 100049, P. R. China
| | - Zhi-Yong Yang
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences , 19A Yuquanlu, Beijing 100049, P. R. China
| | - Wei-Feng Zhang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, P. R. China
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32
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Precise Characterisation of Molecular Orientation in a Single Crystal Field-Effect Transistor Using Polarised Raman Spectroscopy. Sci Rep 2016; 6:33057. [PMID: 27619423 PMCID: PMC5020501 DOI: 10.1038/srep33057] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2016] [Accepted: 08/17/2016] [Indexed: 11/08/2022] Open
Abstract
Charge transport in organic semiconductors is strongly dependent on the molecular orientation and packing, such that manipulation of this molecular packing is a proven technique for enhancing the charge mobility in organic transistors. However, quantitative measurements of molecular orientation in micrometre-scale structures are experimentally challenging. Several research groups have suggested polarised Raman spectroscopy as a suitable technique for these measurements and have been able to partially characterise molecular orientations using one or two orientation parameters. Here we demonstrate a new approach that allows quantitative measurements of molecular orientations in terms of three parameters, offering the complete characterisation of a three-dimensional orientation. We apply this new method to organic semiconductor molecules in a single crystal field-effect transistor in order to correlate the measured orientation with charge carrier mobility measurements. This approach offers the opportunity for micrometre resolution (diffraction limited) spatial mapping of molecular orientation using bench-top apparatus, enabling a rational approach towards controlling this orientation to achieve optimum device performance.
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33
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Zhu B, Wang H, Leow WR, Cai Y, Loh XJ, Han MY, Chen X. Silk Fibroin for Flexible Electronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:4250-65. [PMID: 26684370 DOI: 10.1002/adma.201504276] [Citation(s) in RCA: 229] [Impact Index Per Article: 28.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2015] [Revised: 10/01/2015] [Indexed: 05/05/2023]
Abstract
Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.
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Affiliation(s)
- Bowen Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Hong Wang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Wan Ru Leow
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Yurong Cai
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Xian Jun Loh
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 3 Research Link, Singapore, 117602
| | - Ming-Yong Han
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 3 Research Link, Singapore, 117602
| | - Xiaodong Chen
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
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34
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Tetzner K, Bose IR, Bock K. Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates. MATERIALS 2014; 7:7226-7242. [PMID: 28788243 PMCID: PMC5512632 DOI: 10.3390/ma7117226] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2014] [Revised: 10/02/2014] [Accepted: 10/15/2014] [Indexed: 11/25/2022]
Abstract
In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor.
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Affiliation(s)
- Kornelius Tetzner
- Research Center for Microperipheric Technologies, Technische Universität Berlin, Gustav-Meyer-Allee 25, 13355 Berlin, Germany.
| | - Indranil R Bose
- Fraunhofer Research Institution for Modular Solid State Technologies EMFT, Hansastr. 27d, 80686 Munich, Germany.
| | - Karlheinz Bock
- Electronics Packaging Lab (IAVT), Technische Universität Dresden, Helmholtzstr. 10, 01069 Dresden, Germany.
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35
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Schweicher G, Olivier Y, Lemaur V, Geerts YH. What Currently Limits Charge Carrier Mobility in Crystals of Molecular Semiconductors? Isr J Chem 2014. [DOI: 10.1002/ijch.201400047] [Citation(s) in RCA: 89] [Impact Index Per Article: 8.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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36
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Perez LA, Zalar P, Ying L, Schmidt K, Toney MF, Nguyen TQ, Bazan GC, Kramer EJ. Effect of Backbone Regioregularity on the Structure and Orientation of a Donor–Acceptor Semiconducting Copolymer. Macromolecules 2014. [DOI: 10.1021/ma4019679] [Citation(s) in RCA: 69] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
| | | | | | - Kristin Schmidt
- Stanford Synchrotron Radiation Lightsource, SLAC National
Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Michael F. Toney
- Stanford Synchrotron Radiation Lightsource, SLAC National
Accelerator Laboratory, Menlo Park, California 94025, United States
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37
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Zhao X, Wang S, Li A, Ouyang J, Xia G, Zhou J. Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors. RSC Adv 2014. [DOI: 10.1039/c4ra00633j] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.
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Affiliation(s)
- Xurong Zhao
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education)
- Shandong University
- Jinan 250061, China
| | - Sumei Wang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education)
- Shandong University
- Jinan 250061, China
| | - Aiju Li
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education)
- Shandong University
- Jinan 250061, China
| | - Jun Ouyang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education)
- Shandong University
- Jinan 250061, China
| | - Guodong Xia
- Department of Material and Engineering
- Qilu University of Technology
- Jinan 250353, China
| | - Ji Zhou
- State Key Laboratory of New Ceramic and Fine Processing
- Tsinghua University
- Beijing, China
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38
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Guo Y, Ma X, Su Z. Interfacial Interactions between Poly(3-hexylthiophene) and Substrates. Macromolecules 2013. [DOI: 10.1021/ma302645m] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Yan Guo
- State Key
Laboratory of Polymer Physics and Chemistry,
Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, People’s
Republic of China
| | - Xiaojing Ma
- State Key
Laboratory of Polymer Physics and Chemistry,
Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, People’s
Republic of China
| | - Zhaohui Su
- State Key
Laboratory of Polymer Physics and Chemistry,
Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, People’s
Republic of China
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39
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Zhang L, Wu T, Guo Y, Zhao Y, Sun X, Wen Y, Yu G, Liu Y. Large-area, flexible imaging arrays constructed by light-charge organic memories. Sci Rep 2013; 3:1080. [PMID: 23326636 PMCID: PMC3546321 DOI: 10.1038/srep01080] [Citation(s) in RCA: 37] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2012] [Accepted: 01/03/2013] [Indexed: 11/22/2022] Open
Abstract
Existing organic imaging circuits, which offer attractive benefits of light weight, low cost and flexibility, are exclusively based on phototransistor or photodiode arrays. One shortcoming of these photo-sensors is that the light signal should keep invariant throughout the whole pixel-addressing and reading process. As a feasible solution, we synthesized a new charge storage molecule and embedded it into a device, which we call light-charge organic memory (LCOM). In LCOM, the functionalities of photo-sensor and non-volatile memory are integrated. Thanks to the deliberate engineering of electronic structure and self-organization process at the interface, 92% of the stored charges, which are linearly controlled by the quantity of light, retain after 20000 s. The stored charges can also be non-destructively read and erased by a simple voltage program. These results pave the way to large-area, flexible imaging circuits and demonstrate a bright future of small molecular materials in non-volatile memory.
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Affiliation(s)
- Lei Zhang
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Ti Wu
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Yunlong Guo
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Yan Zhao
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiangnan Sun
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Yugeng Wen
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Gui Yu
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Yunqi Liu
- Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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40
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Gupta R, Thomas R, Kulkarni GU. Tunable solid state fluorescence behavior of a methoxy substituted oligo(phenyleneethynylene): influence of cooling rate and surface crystallization. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm31903a] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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41
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Sun X, Zhang L, Di CA, Wen Y, Guo Y, Zhao Y, Yu G, Liu Y. Morphology optimization for the fabrication of high mobility thin-film transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011; 23:3128-3133. [PMID: 21608054 DOI: 10.1002/adma.201101178] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2011] [Indexed: 05/30/2023]
Affiliation(s)
- Xiangnan Sun
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P.R. China
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42
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Crivillers N, Orgiu E, Reinders F, Mayor M, Samorì P. Optical modulation of the charge injection in an organic field-effect transistor based on photochromic self-assembled-monolayer-functionalized electrodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011; 23:1447-52. [PMID: 21433111 DOI: 10.1002/adma.201003736] [Citation(s) in RCA: 87] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2010] [Revised: 11/18/2010] [Indexed: 05/03/2023]
Affiliation(s)
- Núria Crivillers
- Nanochemistry Laboratory, ISIS - CNRS, Université de Strasbourg, France
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Wen Y, Liu Y, Guo Y, Yu G, Hu W. Experimental Techniques for the Fabrication and Characterization of Organic Thin Films for Field-Effect Transistors. Chem Rev 2011; 111:3358-406. [DOI: 10.1021/cr1001904] [Citation(s) in RCA: 214] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Yugeng Wen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Wenping Hu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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Sun X, Liu Y, Di CA, Wen Y, Guo Y, Zhang L, Zhao Y, Yu G. Interfacial heterogeneity of surface energy in organic field-effect transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011; 23:1009-1014. [PMID: 21341316 DOI: 10.1002/adma.201004187] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2010] [Indexed: 05/30/2023]
Affiliation(s)
- Xiangnan Sun
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, PR China
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Qiu L, Xu Q, Lee WH, Wang X, Kang B, Lv G, Cho K. Organic thin-film transistors with a photo-patternable semiconducting polymer blend. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm12366a] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Shao W, Dong H, Jiang L, Hu W. Morphology control for high performance organic thin film transistors. Chem Sci 2011. [DOI: 10.1039/c0sc00502a] [Citation(s) in RCA: 97] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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