1D and 2D Boron Nitride Nano Structures: A Critical Analysis for Emerging Applications in the Field of Nanocomposites

Boron nitride (BN) with its 1D and 2D nano derivatives have gained immense popularity in both the field of research and applications. These nano derivatives have proved to be one of the most promising fillers which can be incorporated in polymers to form nanocomposites with excellent properties. These materials have been around for 25 years whereas significant research has been done in this field for only the past decade. There are many interesting properties which are imparted to the nanocomposites wherein thermal stability, large energy band gap, resistance to oxidation, excellent thermal conductivity, chemical inertness, and exceptional mechanical properties are just a few worthy of mention. Hexagonal boron nitride (h-BN) was selected as the parent material by most researchers reviewed in this paper through which 2D derivative Boron nitride nanosheets (BNNS) and 1D derivative Boron nitride nanotubes (BNNTs) are synthesized. This review will focus on the in-depth properties of h-BN and further will concisely focus on BNNS and BNNTs for their various properties. A detailed discussion of the addition of BNNS and BNNTs into polymers to form nanocomposites, their synthesis, properties, and applications is followed by a summary determining the most suitable synthesizing processes and the materials, keeping in mind the current challenges.

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.

A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20μm.

Large-Scale Synthesis h-BN Films on Copper-Nickel Alloy by Atmospheric Pressure Chemical Vapor Deposition

Due to its high thermal and chemical stability, excellent dielectric properties, unique optical properties, corrosion resistance, and oxidation resistance, the two-dimensional hexagonal boron nitride (h-BN) is often used in a thermal conductor protective layer in deep ultraviolet light-emitting detector fields. However, due to the complicated growth conditions of h-BN, it is often necessary to prepare h-BN by the CVD method in a high vacuum environment, which is limited to a certain extent in terms of film size and production cost. In order to solve this problem, we proposed a method to prepare h-BN thin films by atmospheric CVD (APCVD). This method does not need a vacuum environment, which reduces energy consumption and cost, and makes the operation simpler and the experimental environment safer. The preparation of high-quality h-BN film was carried out using a Cu-Ni alloy as the growth substrate. The growth process of h-BN film was studied, and the influence of growth parameters on the structure of the h-BN film was explored. The morphological features and elemental composition pairs of the samples were characterized and analyzed, which confirmed that the high-quality h-BN film could be successfully grown on the Cu-Ni alloy substrate by APCVD. The UV detection device prepared by using the prepared h-BN film as the photoresponse material had good photoresponse characteristics and performance stability. It provides a new idea for the low-cost preparation of large-scale h-BN.

Two-dimensional biomaterials: material science, biological effect and biomedical engineering applications

To date, nanotechnology has increasingly been identified as a promising and efficient means to address a number of challenges associated with public health. In the past decade, two-dimensional (2D) biomaterials, as a unique nanoplatform with planar topology, have attracted explosive interest in various fields such as biomedicine due to their unique morphology, physicochemical properties and biological effect. Motivated by the progress of graphene in biomedicine, dozens of types of ultrathin 2D biomaterials have found versatile bio-applications, including biosensing, biomedical imaging, delivery of therapeutic agents, cancer theranostics, tissue engineering, as well as others. The effective utilization of 2D biomaterials stems from the in-depth knowledge of structure-property-bioactivity-biosafety-application-performance relationships. A comprehensive summary of 2D biomaterials for biomedicine is still lacking. In this comprehensive review, we aim to concentrate on the state-of-the-art 2D biomaterials with a particular focus on their versatile biomedical applications. In particular, we discuss the design, fabrication and functionalization of 2D biomaterials used for diverse biomedical applications based on the up-to-date progress. Furthermore, the interactions between 2D biomaterials and biological systems on the spatial-temporal scale are highlighted, which will deepen the understanding of the underlying action mechanism of 2D biomaterials aiding their design with improved functionalities. Finally, taking the bench-to-bedside as a focus, we conclude this review by proposing the current crucial issues/challenges and presenting the future development directions to advance the clinical translation of these emerging 2D biomaterials.

Equilibrium shape of single-layer hexagonal boron nitride islands on iridium

Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating chemical vapor deposition synthesis of hBN on an Ir(111) substrate, and focus on the substrate morphology, more specifically mono-atomic steps that are always present on all catalytic surfaces of practical use. From low-energy electron microscopy and atomic force microscopy data, we are able to set up an extended Wulff construction scheme and provide a clear elaboration of different interactions governing the equilibrium shapes of the growing hBN islands that deviate from the idealistic triangular form. Most importantly, intrinsic hBN edge energy and interaction with the iridium step edges are examined separately, revealing in such way the importance of substrate step morphology for the island structure and the overall quality of 2D materials.

Predicting the preferred morphology of hexagonal boron nitride domain structure on nickel from ReaxFF-based molecular dynamics simulations

An understanding of the nucleation and growth of hexagonal boron nitride (hBN) on nickel substrates is essential to its development as a functional material. In particular, fundamental insights into the formation of the hexagonal lattices with alternating boron (B) and nitrogen (N) atoms could be exploited to control hBN lattice morphologies for targeted applications. In this study, the preferred shapes and edge configurations of atomically smooth hBN on Ni(111) were investigated using molecular dynamics (MD) simulations, along with reactive force field (ReaxFF) developed to represent the Ni/B/N system and the lattice-building B-N bond formation. The obtained hBN lattices, from different B : N feed ratios, are able to confirm that hBN domain geometries can indeed be tuned by varying thermodynamic parameters (i.e., chemical potentials of N and B) - a finding that has only been predicted using quantum mechanical theories. Here, we also showed that the nitrogen fed to the system plays a more crucial role in dictating the size of hBN lattices. With an increase of the relative N content, the simulated hBN domain shapes also transition from equilateral triangles to hexagons, again, consistent with the anticipation based on Density Functional Theory (DFT) calculations. Hence, a plausible approach to acquire a desired hBN nanostructure depends on careful control over the synthesis conditions, which now can benefit from reliable molecular simulations.

Dependence of h-BN Film Thickness as Grown on Nickel Single-Crystal Substrates of Different Orientations

Chemical vapor deposition (CVD) of two-dimensional materials has been an active area of research in recent years because it is a scalable process for obtaining thin films that can be used to fabricate devices. The growth mechanism for hexagonal boron nitride (h-BN) on metal catalyst substrates has been described to be either surface energy-driven or diffusion-driven. In this work, h-BN is grown in a CVD system on Ni single-crystal substrates as a function of Ni crystallographic orientation to clarify the competing forces acting on the growth mechanism. We observed that the thickness of the h-BN film depends on the Ni substrate orientation, with the growth rate increasing from the (100) surface to the (111) surface and the highest on the (110) surface. We associate the observed results with surface reactivity and diffusivity differences for different Ni orientations. Boron and nitrogen diffuse and precipitate from the Ni bulk to form thin multilayer h-BN. Our results serve to clarify the h-BN CVD growth mechanism which has been previously ascribed to a surface energy-driven growth mechanism.

Electronic and Optical Properties of 2D Materials Constructed from Light Atoms

Boron, carbon, nitrogen, and oxygen atoms can form various building blocks for further construction of structurally well-defined 2D materials (2DMs). Both in theory and experiment, it has been documented that the electronic structures and optical properties of 2DMs are well tunable through a rational design of the material structure. Here, the recent progress on 2DMs that are composed of B, C, N, and O elements is introduced, including borophene, graphene, h-BN, g-C₃ N₄ , organic 2D polymers (2DPs), etc. Attention is put on the band structure/bandgap engineering for these materials through a variety of methodologies, such as chemical modifications, layer number and atomic structure control, change of conjugation degree, etc. The optical properties, such as photoluminescence, thermoluminescence, single photon emission, as well as the associated applications in bioimaging and sensing, are discussed in detail and highlighted.

Recent progress in the tailored growth of two-dimensional hexagonal boron nitride via chemical vapour deposition

Recent years have witnessed many advances in two-dimensional (2D) hexagonal boron nitride (h-BN) materials in both fundamental research and practical applications. This has ultimately been inspired by the unique electrical and optical properties, as well as the excellent thermal and chemical stability of h-BN. However, controllable and scalable preparation of 2D h-BN materials has been challenging. Very recently, the chemical vapour deposition (CVD) technique has shown great promise for achieving high-quality h-BN samples with excellent layer-number selectivity and large-area uniformity, considerably contributing to the latest advancements of 2D material research. In this tutorial review, we provide a systematic summary of the state-of-the-art in the tailored production of 2D h-BN on various substrates by virtue of CVD routes.

Polymer composites based on hexagonal boron nitride and their application in thermally conductive composites

Hexagonal boron nitride (h-BN) is also referred to as "white graphite". Owing to its two-dimensional planar structure, its thermal conductivity along and perpendicular to a basal plane is anisotropic. However, h-BN exhibits properties that are distinct from those of graphite, such as electric insulation, superior antioxidative ability, and purely white appearance. These qualities render h-BN superior as a filler in composites that require thermal conductivity while exhibiting electric insulation. Since the thermal performance of composites is mainly affected by thermal pathways, this article begins with an overall introduction of the preparation of boron nitride nanosheets, followed by a review of the fabrication of h-BN-filled composites. Lastly, the construction of thermally conductive networks is discussed.

Chemical sensing with 2D materials

During the last decade, two-dimensional materials (2DMs) have attracted great attention due to their unique chemical and physical properties, which make them appealing platforms for diverse applications in sensing of gas, metal ions as well as relevant chemical entities.

Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.

Time dependent decomposition of ammonia borane for the controlled production of 2D hexagonal boron nitride

Ammonia borane (AB) is among the most promising precursors for the large-scale synthesis of hexagonal boron nitride (h-BN) by chemical vapour deposition (CVD). Its non-toxic and non-flammable properties make AB particularly attractive for industry. AB decomposition under CVD conditions, however, is complex and hence has hindered tailored h-BN production and its exploitation. To overcome this challenge, we report in-depth decomposition studies of AB under industrially safe growth conditions. In situ mass spectrometry revealed a time and temperature-dependent release of a plethora of NxBy-containing species and, as a result, significant changes of the N:B ratio during h-BN synthesis. Such fluctuations strongly influence the formation and morphology of 2D h-BN. By means of in situ gas monitoring and regulating the precursor temperature over time we achieve uniform release of volatile chemical species over many hours for the first time, paving the way towards the controlled, industrially viable production of h-BN.

Atomistic Insights into Nucleation and Formation of Hexagonal Boron Nitride on Nickel from First-Principles-Based Reactive Molecular Dynamics Simulations

Atomistic-scale insights into the growth of a continuous, atomically thin hexagonal boron nitride (hBN) lattice from elemental boron and nitrogen on Ni substrates were obtained from multiscale modeling combining density functional theory (DFT) and reactive molecular dynamics. The quantum mechanical calculations focused on the adsorption and reaction energetics for the hBN building-block species, i.e., atomic B, N, B_xN_y (x, y = 1, 2), on Ni(111) and Ni(211), and the diffusion pathways of elemental B and N on these slab model surfaces and in the sublayer. B can diffuse competitively on both the surface and in the sublayer, while N diffuses strictly on the substrate surface. The DFT data were then used to generate a classical description of the Ni-B and Ni-N pair interactions within the formulation of the reactive force field, ReaxFF. Using the potential developed from this work, the elementary nucleation and growth process of an hBN monolayer structure from elemental B and N is shown at the atomistic scale. The nucleation initiates from the growth of linear BN chains, which evolve into branched and then hexagonal lattices. Subsequent DFT calculations confirmed the structure evolution energetically and validate the self-consistency of this multiscale modeling framework. On the basis of this framework, the fundamental aspects regarding crystal quality and the role of temperature and substrates used during hBN growth can also be understood.

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Highly oriented, epitaxial growth of monolayer h-BN on Cu(111)/sapphire substrate by ambient pressure chemical vapour deposition.

Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition

Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well.

Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition

Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substrates

Hexagonal boron nitride (h-BN) is an important material for the development of new 2D heterostructures. To enable this development, the relationship between crystal growth and the substrate orientation must be explored and understood. In this study, we simultaneously grew h-BN on different orientations of Cu substrates to establish the impact of substrate structure on the growth habit of thin h-BN layers. The substrates studied were a polycrystalline Cu foil, Cu(100), Cu(110), and Cu(111). Fourier transform grazing-incidence infrared reflection absorption spectroscopy (FT-IRRAS) was used to identify h-BN on copper substrates. X-ray photoelectron spectroscopy (XPS) was used to determine the effective thickness of the h-BN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) were used to measure the morphology of the films and postgrowth crystal structure of the Cu substrates, respectively. Combining the SEM and EBSD images allowed for the correlation between h-BN film coverage and the crystal structure of Cu. It was found that the growth rate was inversely proportional to the surface free energy of the Cu surface, with Cu(111) having the most h-BN surface coverage. The Cu foil predominately crystallized with a (100) surface orientation, and likewise had a film coverage very close to the Cu(100).

Growth kinetics of white graphene (h-BN) on a planarised Ni foil surface

The morphology of the surface and the grain orientation of metal catalysts have been considered to be two important factors for the growth of white graphene (h-BN) by chemical vapour deposition (CVD). We report a correlation between the growth rate of h-BN and the orientation of the nickel grains. The surface of the nickel (Ni) foil was first polished by electrochemical polishing (ECP) and subsequently annealed in hydrogen at atmospheric pressure to suppress the effect of the surface morphology. Atmospheric annealing with hydrogen reduced the nucleation sites of h-BN, which induced a large crystal size mainly grown from the grain boundary with few other nucleation sites in the Ni foil. A higher growth rate was observed from the Ni grains that had the {110} or {100} orientation due to their higher surface energy.

Few-atomic-layer boron nitride nanosheets synthesized in solid thermal waves

Few-atomic-layer hexagonal boron nitride (h-BN) sheets were synthesized in a solid thermal wave implemented in a B₂O₃ + (3 + 0.5k)Mg + kNH₄Cl mixture.

Two-dimensional material membranes: an emerging platform for controllable mass transport applications

Two-dimensional materials provide an ideal platform for studying the fundamental properties of atomic-level thickness systems, and are appropriate for lots of engineering applications in various fields. Although 2D materials are the thinnest membranes, they have been revealed to have high impermeability even to the smallest molecule. By the virtue of this high impermeability of the 2D materials in combination with their other unique properties, 2D materials open up a variety of applications that are impossible for conventional membranes. In this review, the latest applications based on high impermeability and selective permeation of these 2D material membranes are overviewed for different fields, including environmental control, chemical engineering, electronic devices, and biosensors. The working mechanism for each kind of application is described in detail. A summary and outlook is then provided on the challenges and new directions in this emerging research field.

Large-area monolayer hexagonal boron nitride on Pt foil

Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for two-dimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. Here, we report the systematical study of h-BN growth on Pt foil by using low pressure chemical vapor deposition with a borazine source. The monolayer h-BN film was obtained over the whole Pt foil (2 × 5 cm(2)) under <100 mTorr, where the size is limited only by the Pt foil size. A borazine source was catalytically decomposed on the Pt surface, leading to the self-limiting growth of the monolayer without the associating precipitation, which is very similar to the growth of graphene on Cu. The orientation of the h-BN domains was largely confined by the Pt domain, which is confirmed by polarizing optical microscopy (POM) assisted by the nematic liquid crystal (LC) film. The total pressure and orientation of the Pt lattice plane are crucial parameters for thickness control. At high pressure (∼0.5 Torr), thick film was grown on Pt (111), and in contrast, thin film was grown on Pt (001). Our advances in monolayer h-BN growth will play an important role to further develop a high quality h-BN film that can be used for vertical tunneling, optoelectronic devices and growth templates for a variety of heterostructures.

Controllable co-segregation synthesis of wafer-scale hexagonal boron nitride thin films

A facile and scalable co-segregation method is used to grow hexagonal boron nitride (h-BN) thin films from B- and N-containing metals. By annealing the sandwiched metal substrates in vacuum, sub-monolayer h-BN flakes, monolayer h-BN films, and multilayer h-BN thin films of varying thickness are successfully prepared. This approach follows an underneath-growth mode and exhibits good thickness- and location-control.

Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene

Graphene is highly sensitive to environmental influences, and thus, it is worthwhile to deposit protective layers on graphene without impairing its excellent properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection. In this research, we demonstrated the van der Waals epitaxy of h-BN nanosheets on mechanically exfoliated graphene by chemical vapor deposition, using borazine as the precursor to h-BN. The h-BN nanosheets had a triangular morphology on a narrow graphene belt but a polygonal morphology on a larger graphene film. The h-BN nanosheets on graphene were highly crystalline, except for various in-plane lattice orientations. Interestingly, the h-BN nanosheets preferred to grow on graphene than on SiO2/Si under the chosen experimental conditions, and this selective growth spoke of potential promise for application to the preparation of graphene/h-BN superlattice structures fabricated on SiO2/Si.

Production of aqueous dispersions of inorganic graphene analogues by exfoliation and stabilization with non-ionic surfactants

The production of stable aqueous suspensions of several inorganic graphene analogues was performed by exfoliation of the corresponding bulk layered materials via sonication using non-ionic surfactants as dispersing agents.

Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces

Recently, monolayers of layered transition metal dichalcogenides (LTMD), such as MX2 (M = Mo, W and X = S, Se), have been reported to exhibit significant spin-valley coupling and optoelectronic performances because of the unique structural symmetry and band structures. Monolayers in this class of materials offered a burgeoning field in fundamental physics, energy harvesting, electronics, and optoelectronics. However, most studies to date are hindered by great challenges on the synthesis and transfer of high-quality LTMD monolayers. Hence, a feasible synthetic process to overcome the challenges is essential. Here, we demonstrate the growth of high-quality MS2 (M = Mo, W) monolayers using ambient-pressure chemical vapor deposition (APCVD) with the seeding of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS). The growth of a MS2 monolayer is achieved on various surfaces with a significant flexibility to surface corrugation. Electronic transport and optical performances of the as-grown MS2 monolayers are comparable to those of exfoliated MS2 monolayers. We also demonstrate a robust technique in transferring the MS2 monolayer samples to diverse surfaces, which may stimulate the progress on the class of materials and open a new route toward the synthesis of various novel hybrid structures with LTMD monolayer and functional materials.

Synthesis of patched or stacked graphene and hBN flakes: a route to hybrid structure discovery

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) have attracted significant attention due to their remarkable properties. Numerous interesting graphene/hBN hybrid structures have been proposed but their implementation has been very limited. In this work, the synthesis of patched structures through consecutive chemical vapor deposition (CVD) on the same substrate was investigated. Both in-plane junctions and stacked layers were obtained. For stacked layers, depending on the synthesis sequence, in one case turbostratic stacking with random rotations were obtained. In another, "AA-like", slightly twisted stacking between graphene and hBN was observed with lattice orientation misalignment consistently to be <1°. Raman characterizations not only confirmed that hBN is a superior substrate but also revealed for the first time that a graphene edge with hBN passivation displays reduced D band intensity compared to an open edge. These studies pave the way for the proposed well-ordered graphene/hBN structures and outline exciting future directions for hybrid 2D materials.

Advances in 2D boron nitride nanostructures: nanosheets, nanoribbons, nanomeshes, and hybrids with graphene

The recent surge in graphene research has stimulated interest in the investigation of various 2-dimensional (2D) nanomaterials. Among these materials, the 2D boron nitride (BN) nanostructures are in a unique position. This is because they are the isoelectric analogs to graphene structures and share very similar structural characteristics and many physical properties except for the large band gap. The main forms of the 2D BN nanostructures include nanosheets (BNNSs), nanoribbons (BNNRs), and nanomeshes (BNNMs). BNNRs are essentially BNNSs with narrow widths in which the edge effects become significant; BNNMs are also variations of BNNSs, which are supported on certain metal substrates where strong interactions and the lattice mismatch between the substrate and the nanosheet result in periodic shallow regions on the nanosheet surface. Recently, the hybrids of 2D BN nanostructures with graphene, in the form of either in-plane hybrids or inter-plane heterolayers, have also drawn much attention. In particular, the BNNS-graphene heterolayer architectures are finding important electronic applications as BNNSs may serve as excellent dielectric substrates or separation layers for graphene electronic devices. In this article, we first discuss the structural basics, spectroscopic signatures, and physical properties of the 2D BN nanostructures. Then, various top-down and bottom-up preparation methodologies are reviewed in detail. Several sections are dedicated to the preparation of BNNRs, BNNMs, and BNNS-graphene hybrids, respectively. Following some more discussions on the applications of these unique materials, the article is concluded with a summary and perspectives of this exciting new field.