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Ishida Y. Atomic-Scale Imaging of Clay Mineral Nanosheets and Their Supramolecular Complexes through Electron Microscopy: A Supramolecular Chemist's Perspective. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:6065-6076. [PMID: 38484331 DOI: 10.1021/acs.langmuir.3c03779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Recent advancements in electron microscopy techniques have revolutionized the ability to directly visualize and understand the intricate world of supramolecular chemistry. This paper provides a concise overview of a study delving into the atomic-scale imaging of monolayer clay mineral nanosheets and their associated supramolecular complexes. The imaging is conducted by harnessing the power of aberration-corrected scanning transmission electron microscopy (STEM). Clay mineral nanosheets, with their anionic charge and ultrathin thickness (of 1 nm), serve as a stable Coulombic host material for cationic guest molecules through electrostatic interactions, facilitating exceptional stability and control during observation. By incorporation of heavy-metal atom markers coordinated within the target molecules, high-angle annular dark field STEM enables a clear visualization of these supramolecular complexes. This approach helps to overcome the limitations of graphene-based systems and expands the possibilities of atomic-scale imaging of nonperiodic molecular assemblies formed by weak supramolecular interactions. The fusion of electron microscopy techniques with the principles of supramolecular and material chemistry offers exciting opportunities for studying the structure, behavior, and properties of complex supramolecular systems. It sheds light on the intricate molecular architectures and design principles governing these systems. This study showcases the immense potential of electron microscopy in supramolecular chemistry and invites researchers from various disciplines to explore the transformative possibilities of atomic-scale imaging in the field.
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Affiliation(s)
- Yohei Ishida
- Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580 Japan
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2
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Cao Z, Zhao Y, Wu G, Cho J, Abid M, Choi M, Ó Coileáin C, Hung KM, Chang CR, Wu HC. Enhanced NO 2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9495-9505. [PMID: 38334441 DOI: 10.1021/acsami.3c17194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Nanodevices based on van der Waals heterostructures have been predicted, and shown, to have unprecedented operational principles and functionalities that hold promise for highly sensitive and selective gas sensors with rapid response times and minimal power consumption. In this study, we fabricated gas sensors based on vertical MoS2/WS2 van der Waals heterostructures and investigated their gas sensing capabilities. Compared with individual MoS2 or WS2 gas sensors, the MoS2/WS2 van der Waals heterostructure gas sensors are shown to have enhanced sensitivity, faster response times, rapid recovery, and a notable selectivity, especially toward NO2. In combination with a theoretical model, we show that it is important to take into account created trapped states (flat bands) induced by the adsorption of gas molecules, which capture charges and alter the inherent built-in potential of van der Waals heterostructure gas sensors. Additionally, we note that the performance of these MoS2/WS2 heterostructure gas sensors could be further enhanced using electrical gating and mechanical strain. Our findings highlight the importance of understanding the effects of altered built-in potentials arising from gas molecule adsorption induced flat bands, thus offering a way to enhance the gas sensing performance of van der Waals heterostructure gas sensors.
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Affiliation(s)
- Ze Cao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
- Department of Advanced Materials Engineering, Chung-Ang University, 4726, Seodong-daero, Daedeok-myeon, Anseong-si, Gyeonggi-do 17546, Republic of Korea
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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3
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Dong L, Yuan S, Wei G, Zhu P, Ma S, Xu B, Yang Y. Artificial Optoelectronic Synapse Based on Violet Phosphorus Microfiber Arrays. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2306998. [PMID: 37963849 DOI: 10.1002/smll.202306998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 10/31/2023] [Indexed: 11/16/2023]
Abstract
Memristor-based artificial synapses are regarded as the most promising candidate to develop brain-like neuromorphic network computers and overcome the bottleneck of Von-Neumann architecture. Violet phosphorus (VP) as a new allotrope of available phosphorus with outstanding electro-optical properties and stability has attracted more and more attention in the past several years. In this study, large-scale, high-yield VP microfiber vertical arrays have been successfully developed on a Sn-coated graphite paper and are used as the memristor functional layers to build reliable, low-power artificial synaptic devices. The VP devices can well mimic the major synaptic functions such as short-term memory (STM), long-term memory (LTM), paired-pulse facilitation (PPF), spike timing-dependent plasticity (STDP), and spike rate-dependent plasticity (SRDP) under both electrical and light stimulation conditions, even the dendritic synapse functions and simple logical operations. By virtue of the excellent performance, the VP artificial synapse devices can be conductive to building high-performance optic-neural synaptic devices simulating the human-like optic nerve system. On this basis, Pavlov's associative memory can be successfully implemented optically. This study provides a promising approach for the design and manufacture of VP-based artificial synaptic devices and outlines a direction with multifunctional neural devices.
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Affiliation(s)
- Liyan Dong
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, 710021, P. R. China
| | - Shuai Yuan
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, 710021, P. R. China
| | - Guodong Wei
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, 710021, P. R. China
| | - Peifen Zhu
- Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO, 65211, USA
| | - Shufang Ma
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, 710021, P. R. China
| | - Bingshe Xu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, 710021, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, 030024, P. R. China
| | - Ya Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
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4
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Zhang C, Ning J, Wang D, Zhang J, Hao Y. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors. NANOTECHNOLOGY 2023; 35:042001. [PMID: 37524059 DOI: 10.1088/1361-6528/acebf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
With advancements in information technology, an enormous amount of data is being generated that must be quickly accessible. However, conventional Si memory cells are approaching their physical limits and will be unable to meet the requirements of intense applications in the future. Notably, 2D atomically thin materials have demonstrated multiple novel physical and chemical properties that can be used to investigate next-generation electronic devices and breakthrough physical limits to continue Moore's law. Band structure is an important semiconductor parameter that determines their electrical and optical properties. In particular, 2D materials have highly tunable bandgaps and Fermi levels that can be achieved through band structure engineering methods such as heterostructure, substrate engineering, chemical doping, intercalation, and electrostatic doping. In particular, dynamic control of band structure engineering can be used in recent advancements in 2D devices to realize nonvolatile storage performance. This study examines recent advancements in 2D memory devices that utilize band structure engineering. The operational mechanisms and memory characteristics are described for each band structure engineering method. Band structure engineering provides a platform for developing new structures and realizing superior performance with respect to nonvolatile memory.
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Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
- Xidian-Wuhu Research Institute, Wuhu 241000, People's Republic of China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
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Zhou PK, Lin XL, Chee MY, Lew WS, Zeng T, Li HH, Chen X, Chen ZR, Zheng HD. Switching the memory behaviour from binary to ternary by triggering S 62- relaxation in polysulfide-bearing zinc-organic complex molecular memories. MATERIALS HORIZONS 2023. [PMID: 37070656 DOI: 10.1039/d3mh00037k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS6(L)2-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS6(L)-based memories (L = 2,2'-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (104.22/102.27/1 and 104.85/102.58/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S62- anions. The lower conjugated degrees in ZnS6(L)2 result in less compact packing; consequently, the adjacent S62- rings are too long to trigger the S62- relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.
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Affiliation(s)
- Pan-Ke Zhou
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiao-Li Lin
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Mun Yin Chee
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Hao-Hong Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Zhi-Rong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Hui-Dong Zheng
- Fujian Engineering Research Centre of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China.
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6
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Aldana S, Jadwiszczak J, Zhang H. On the switching mechanism and optimisation of ion irradiation enabled 2D MoS 2 memristors. NANOSCALE 2023; 15:6408-6416. [PMID: 36929381 DOI: 10.1039/d2nr06810a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit enhanced tunability, scalability and electrical reliability. However, the fundamental of the switching is yet to be clarified before they can meet industrial standards in terms of endurance, variability, resistance ratio, and scalability. This new physical simulator based on the kinetic Monte Carlo (kMC) algorithm reproduces the defect migration process in 2D materials and sheds light on the operation of 2D memristors. The present work employs the simulator to study a two-dimensional 2H-MoS2 planar resistive switching (RS) device with an asymmetric defect concentration introduced by ion irradiation. The simulations unveil the non-filamentary RS process and propose routes to optimize the device's performance. For instance, the resistance ratio can be increased by 53% by controlling the concentration and distribution of defects, while the variability can be reduced by 55% by increasing 5-fold the device size from 10 to 50 nm. Our simulator also explains the trade-offs between the resistance ratio and variability, resistance ratio and scalability, and variability and scalability. Overall, the simulator may enable an understanding and optimization of devices to expedite cutting-edge applications.
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Affiliation(s)
- Samuel Aldana
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Jakub Jadwiszczak
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Hongzhou Zhang
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
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7
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Kamboj N, Betal A, Majumder M, Sahu S, Metre RK. Redox Switching Behavior in Resistive Memory Device Designed Using a Solution-Processable Phenalenyl-Based Co(II) Complex: Experimental and DFT Studies. Inorg Chem 2023; 62:4170-4180. [PMID: 36848532 DOI: 10.1021/acs.inorgchem.2c04264] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/01/2023]
Abstract
We herein report a novel square-planar complex [CoIIL], which was synthesized using the electronically interesting phenalenyl-derived ligand LH2 = 9,9'-(ethane-1,2-diylbis(azanediyl))bis(1H-phenalen-1-one). The molecular structure of the complex is confirmed with the help of the single-crystal X-ray diffraction technique. [CoIIL] is a mononuclear complex where the Co(II) ion is present in the square-planar geometry coordinated by the chelating bis-phenalenone ligand. The solid-state packing of [CoIIL] complex in a crystal structure has been explained with the help of supramolecular studies, which revealed that the π···π stacking present in the [CoIIL] complex is analogous to the one present in tetrathiafulvalene/tetracyanoquinodimethane charge transfer salt, well-known materials for their unique charge carrier interfaces. The [CoIIL] complex was employed as the active material to fabricate a resistive switching memory device, indium tin oxide/CoIIL/Al, and characterized using the write-read-erase-read cycle. The device has interestingly shown a stable and reproducible switching between two different resistance states for more than 2000 s. Observed bistable resistive states of the device have been explained by corroborating the electrochemical characterizations and density functional theory studies, where the role of the CoII metal center and π-conjugated phenalenyl backbone in the redox-resistive switching mechanism is proposed.
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Affiliation(s)
- Nisha Kamboj
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Atanu Betal
- Department of Physics, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Moumita Majumder
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Satyajit Sahu
- Department of Physics, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Ramesh K Metre
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
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8
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Yang WC, Chen YW, Yu YY, Lin YC, Higashihara T, Chen WC. Enhancing the Performance of Electret-Free Phototransistor Memory by Using All-Conjugated Block Copolymer. Macromol Rapid Commun 2023; 44:e2200756. [PMID: 36281923 DOI: 10.1002/marc.202200756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Revised: 10/11/2022] [Indexed: 11/09/2022]
Abstract
Conjugated polymers are of great interest owing to their potential in stretchable electronics to function under complex deformation conditions. To improve the performance of conjugated polymers, various structural designs have been proposed and these conjugated polymers are specially applied in exotic optoelectronics. In this work, a series of all-conjugated block copolymers (PII2T-b-PNDI2T) comprising poly(isoindigo-bithiophene) (PII2T) and poly(naphthalenediimide-bithiophene) (PNDI2T) are developed with varied compositions and applied to electret-free phototransistor memory. Accordingly, these memory devices present p-type transport capability and electrical-ON/photo-OFF memory behavior. The efficacy of the all-conjugated block copolymer design in improving the memory-photoresponse properties in phototransistor memory is revealed. By optimizing the composition of the block copolymer, the corresponding device achieves a wide memory window of 36 V and a high memory ratio of 7 × 104 . Collectively, the results of this study indicate a new concept for designing electret-free phototransistor memory by using all-conjugated block copolymer heterojunctions to mitigate the phase separation of conjugated polymer blends. Meanwhile, the intrinsic optoelectronic properties of the constituent conjugated polymers can be well-maintained by using an all-conjugated block copolymer design.
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Affiliation(s)
- Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan.,Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yi-Wen Chen
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City, 24301, Taiwan
| | - Yang-Yen Yu
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City, 24301, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan.,Department of Chemical Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan
| | - Tomoya Higashihara
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yamagata, 992-8510, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan.,Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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Liu L, Geng B, Ji W, Wu L, Lei S, Hu W. A Highly Crystalline Single Layer 2D Polymer for Low Variability and Excellent Scalability Molecular Memristors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208377. [PMID: 36398525 DOI: 10.1002/adma.202208377] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2022] [Revised: 11/07/2022] [Indexed: 06/16/2023]
Abstract
Large-scale growth of highly crystalline single layer 2D polymers (SL-2DPs) and their subsequent integration into memristors is key to advancing the development of high-density data storage devices. However, leakage problems resulting from the porous structure of 2DPs continue to make such advances extremely challenging. Herein, we overcome this issue by incorporating long alkoxy chains into key molecular building blocks to obtain a highly crystalline 2DP, as visualized by scanning tunneling microscopy, and prevent metal permeation in the subsequent device fabrication process. SL-2DP memristors constructed via direct evaporation of the top electrodes exhibit low variability (σVset = 0.14) due to the single-monomer-thick feature together with the high regular structure and coordination ability which minimizes the stochastic spatial distribution of conductive filaments (CFs) in both vertical and lateral dimensions. The variability is further decreased to 0.04 by confining the formation and fracture of CFs to the interface through the utilization of bilayer junctions. Using peak force tunneling atomic force microscopy, the nanometer scalability (< 50 nm2 ) and low power consumption of these molecular memristor devices are demonstrated.
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Affiliation(s)
- Lei Liu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Bowen Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Wenyan Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Lingli Wu
- Medical College, Northwest Minzu University, Lanzhou, 730000, China
| | - Shengbin Lei
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
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10
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Xue F, Zhang C, Ma Y, Wen Y, He X, Yu B, Zhang X. Integrated Memory Devices Based on 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201880. [PMID: 35557021 DOI: 10.1002/adma.202201880] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.
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Affiliation(s)
- Fei Xue
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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11
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Mustaqeem M, Lin JY, Kamal S, Thakran A, Lu GZ, Naikoo G, Chou PT, Lu KL, Chen YF. Optically Encodable and Erasable Multilevel Nonvolatile Flexible Memory Device Based on Metal-Organic Frameworks. ACS APPLIED MATERIALS & INTERFACES 2022; 14:26895-26903. [PMID: 35658400 DOI: 10.1021/acsami.2c02440] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Multilevel and flexible nonvolatile memory (NVM) is a promising candidate for data storage in next-generation devices but its high bias and low mobility of conducting channels are often its drawbacks. In this study, we demonstrate a low bias of smaller than 0.1 V and a high-mobility graphene layer as a conducting channel for flexible optoelectronic NVM based on a composite thin film of indium-based MOF-derived InCl3 and 4,4-oxydiphthalic anhydride (odpta), Na[In3(odpt)2(OH)2(H2O)2](H2O)4, and reduced graphene oxide (rGO). The optoelectronic NVM device can be encoded and erased optically by ultraviolet (UV) light and visible light, respectively. Our device also achieves memory states over 192 (6-bit storage) distinct levels, which can emerge as mass data storage. It also shows an excellent endurance of write-erase cycles under irradiation with a laser of varying wavelengths, the mechanical stability of more than 1000 bending cycles, and stable retention for longer than 10 000 s. These results open an alternative route for developing low bias and innovative optoelectronic technologies.
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Affiliation(s)
- Mujahid Mustaqeem
- Department of Chemistry, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 106, Taiwan
| | - Jia-Yu Lin
- Department of Physics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - Saqib Kamal
- Institute of Chemistry, Academia Sinica, Taipei 115, Taiwan
| | - Anjali Thakran
- Department of Physics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 106, Taiwan
| | - Guan-Zhang Lu
- Department of Physics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - Gowhar Naikoo
- Department of Mathematics and Sciences, College of Arts and Applied Sciences, Dhofar University, Salalah PC 211, Oman
| | - Pi-Tai Chou
- Department of Chemistry, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - Kuang-Lieh Lu
- Institute of Chemistry, Academia Sinica, Taipei 115, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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12
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Tang B, Veluri H, Li Y, Yu ZG, Waqar M, Leong JF, Sivan M, Zamburg E, Zhang YW, Wang J, Thean AVY. Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. Nat Commun 2022; 13:3037. [PMID: 35650181 PMCID: PMC9160094 DOI: 10.1038/s41467-022-30519-w] [Citation(s) in RCA: 42] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2021] [Accepted: 04/27/2022] [Indexed: 12/03/2022] Open
Abstract
Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS2 memristor arrays are reported. The MoS2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.
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Affiliation(s)
- Baoshan Tang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Hasita Veluri
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Yida Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Zhi Gen Yu
- Institute of High Performance Computing, Singapore, 138632, Singapore
| | - Moaz Waqar
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Jin Feng Leong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Maheswari Sivan
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Evgeny Zamburg
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Yong-Wei Zhang
- Institute of High Performance Computing, Singapore, 138632, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Aaron V-Y Thean
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.
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13
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Precise synthesis of α,ω-chain-end-functionalized poly(dimethylsiloxane) with bromoaryl groups for incorporation in naphthalene-diimide-based N-type semiconducting polymers. POLYMER 2022. [DOI: 10.1016/j.polymer.2022.124934] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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14
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Wu G, Sun J, Zhang Z, Guo D, Liu J, Liu L. Recent advances in biological applications of nanomaterials through defect engineering. THE SCIENCE OF THE TOTAL ENVIRONMENT 2022; 816:151647. [PMID: 34785228 DOI: 10.1016/j.scitotenv.2021.151647] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2021] [Revised: 11/07/2021] [Accepted: 11/09/2021] [Indexed: 06/13/2023]
Abstract
In recent years, defect engineering sprung up in the artificial nanomaterials (NMs) has attracted significant attention, since the physical and chemical properties of NMs could be largely optimized based on the rational control of different defect types and densities. Defective NMs equipped with the improved electric and catalytic ability, would be widely utilized as the photoelectric device and catalysts to alleviate the growing demands of industrial production and environmental treatments. In particular, considering that the features of targeting, adsorptive, loading and optical could be adjusted by the introduction of defects, numerous defective NMs are encouraged to be applied in the biological fields including bacterial inactivation, cancer therapy and so on. And this review is devoted to summarize the recent biological applications of NMs with abundant defects. Moreover, the opportunity of these defective NMs released into the surrounding environment continue to increase, the direct and indirect contact with biological molecules and organisms would be inevitable. Due to its high reactivity and adsorption triggered by defects, NMs tend to exhibit overestimate biological behaviors and effects on organisms. Thus, the sections regarding toxicological effects of NMs with abundant defects are also carried out to supplement the safety assessments of NMs and guide further applications in the industrial production and living.
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Affiliation(s)
- Guizhu Wu
- Institute of Environment and Ecology, School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013, PR China; College of Environmental Science and Engineering, Laboratory of Environmental Remediation and Pollution Control, Nankai University, 38 Tongyan Rd., Tianjin 300350, PR China
| | - Jingyu Sun
- College of Environmental Science and Engineering, Laboratory of Environmental Remediation and Pollution Control, Nankai University, 38 Tongyan Rd., Tianjin 300350, PR China
| | - Ze Zhang
- College of Environmental Science and Engineering, Laboratory of Environmental Remediation and Pollution Control, Nankai University, 38 Tongyan Rd., Tianjin 300350, PR China
| | - Donggang Guo
- College of Environment and Resource, Shanxi University, Taiyuan 30006, PR China.
| | - Jiandang Liu
- State Key Laboratory of Particle Detection and Electronics, University of Science & Technology of China, Hefei, Anhui 230026, PR China.
| | - Lu Liu
- College of Environmental Science and Engineering, Laboratory of Environmental Remediation and Pollution Control, Nankai University, 38 Tongyan Rd., Tianjin 300350, PR China.
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15
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Ouyang A, Zhao D, Wang X, Zhang W, Jiang T, Li A, Liu W. Covalent RGD-graphene-phthalocyanine nanocomposite for fluorescence imaging-guided dual active/passive tumor-targeted combinatorial phototherapy. J Mater Chem B 2021; 10:306-320. [PMID: 34935023 DOI: 10.1039/d1tb02254g] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
Poor tumor selectivity, low stability and quenched fluorescence are the main challenges to be overcome for nanomedicine, and are mainly caused by the dissociation of the nanostructure and aggregation of chromophores in the biological environment. Herein, covalently connected nanoparticles RGD-graphene-phthalocyanine (RGD-GO-SiPc) were constructed based on RGD peptide, silicon phthalocyanine (SiPc) and graphene oxide (GO) via a conjugation reaction for fluorescence imaging-guided cancer-targeted combinatorial phototherapy. The prepared RGD-GO-SiPc exhibited supreme biological stability, high-contrast fluorescence imaging, significantly enhanced NIR absorption, high photothermal conversion efficiency (25.6%), greatly improved cancer-targeting capability, and synergistic photodynamic (PDT) and photothermal therapy (PTT) efficacy along with low toxicity. Both in vitro and in vivo biological studies showed that RGD-GO-SiPc is a kind of promising multifunctional nanomedicine for fluorescence imaging-guided combined photothermal and photodynamic therapy with dual active/passive tumor-targeting properties.
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Affiliation(s)
- Ancheng Ouyang
- Institute of Crystal Materials, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Dongmu Zhao
- Institute of Crystal Materials, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Xianglei Wang
- Institute of Crystal Materials, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Wei Zhang
- Institute of Crystal Materials, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Tianyu Jiang
- Helmholtz International Lab for Anti-Infectives, Shandong University-Helmholtz Institute of Biotechnology, State Key Laboratory of Microbial Technology, Shandong University, Qingdao - 266237, P. R. China
| | - Aiying Li
- Helmholtz International Lab for Anti-Infectives, Shandong University-Helmholtz Institute of Biotechnology, State Key Laboratory of Microbial Technology, Shandong University, Qingdao - 266237, P. R. China
| | - Wei Liu
- Institute of Crystal Materials, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
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16
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DNA mediated graphene oxide (GO)-nanosheets dispersed supramolecular GO-DNA hydrogel: An efficient soft-milieu for simplistic synthesis of Ag-NPs@GO-DNA and Gram + ve/-ve bacteria-based Ag-NPs@GO-DNA-bacteria nano-bio composites. J Mol Liq 2021. [DOI: 10.1016/j.molliq.2021.117482] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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17
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Bian H, Goh YY, Liu Y, Ling H, Xie L, Liu X. Stimuli-Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006469. [PMID: 33837601 DOI: 10.1002/adma.202006469] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
Neuromorphic computing holds promise for building next-generation intelligent systems in a more energy-efficient way than the conventional von Neumann computing architecture. Memristive hardware, which mimics biological neurons and synapses, offers high-speed operation and low power consumption, enabling energy- and area-efficient, brain-inspired computing. Here, recent advances in memristive materials and strategies that emulate synaptic functions for neuromorphic computing are highlighted. The working principles and characteristics of biological neurons and synapses, which can be mimicked by memristive devices, are presented. Besides device structures and operation with different external stimuli such as electric, magnetic, and optical fields, how memristive materials with a rich variety of underlying physical mechanisms can allow fast, reliable, and low-power neuromorphic applications is also discussed. Finally, device requirements are examined and a perspective on challenges in developing memristive materials for device engineering and computing science is given.
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Affiliation(s)
- Hongyu Bian
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Yi Yiing Goh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Yuxia Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
| | - Haifeng Ling
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Linghai Xie
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
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18
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Yuan K, Song T, Yang C, Guo J, Sun Q, Zou Y, Jiao F, Li L, Zhang X, Dong H, Li L, Hu W. Polymer-Assisted Space-Confined Strategy for the Foot-Scale Synthesis of Flexible Metal-Organic Framework-Based Composite Films. J Am Chem Soc 2021; 143:17526-17534. [PMID: 34644063 DOI: 10.1021/jacs.1c07033] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
At the gas-liquid interface, the confined synthesis of metal-organic framework (MOF) films has been extensively developed by spreading an ultrathin oil layer on the aqueous surface as a reactor. However, this interface is susceptible to various disturbances and incapable of synthesizing large-area crystalline MOF films. Herein, we developed a polymer-assisted space-confined strategy to synthesize large-area films by blending poly(methyl methacrylate) (PMMA) into the oil layer, which improved the stability of the gas-liquid interface and the self-shrinkage of the oil layer on the water surface. Meanwhile, the as-synthesized MOFs as a quasi-solid substrate immobilized the edge of the oil layer, which maintained a large spreading area. Thanks to this synergistic effect, we synthesized the freestanding MOF-based film with a foot-level (0.66 ft) lateral dimension, which is the largest size reported so far. Besides, due to the phase separation of the two components, the MOF-PMMA composite film combined the conductivity of MOFs (1.13 S/m) with the flexibility of PMMA and exhibited excellent mechanical properties. More importantly, this strategy could be extended to the preparation of other MOFs, coordination polymers (CPs), and even inorganic material composite films, bringing light to the design and large-scale synthesis of various composite films for practical applications.
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Affiliation(s)
- Kuo Yuan
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China.,Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Tianqun Song
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China.,School of Chemistry and Chemical Engineering, Liaoning Normal University, Dalian 116029, China
| | - Chenhuai Yang
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Jun Guo
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Qisheng Sun
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Ye Zou
- National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Fei Jiao
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Lujiang Li
- School of Materials Science and Engineering, Nankai University, Tianjin 300071, China
| | - Xiaotao Zhang
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Huanli Dong
- National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Liqiang Li
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Wenping Hu
- Department of Chemistry, School of Science and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China.,Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
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19
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Szoszkiewicz R. Local Interactions of Atmospheric Oxygen with MoS 2 Crystals. MATERIALS (BASEL, SWITZERLAND) 2021; 14:5979. [PMID: 34683567 PMCID: PMC8540515 DOI: 10.3390/ma14205979] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Revised: 09/29/2021] [Accepted: 10/07/2021] [Indexed: 11/17/2022]
Abstract
Thin and single MoS2 flakes are envisioned to contribute to the flexible nanoelectronics, particularly in sensing, optoelectronics and energy harvesting. Thus, it is important to study their stability and local surface reactivity. Their most straightforward surface reactions in this context pertain to thermally induced interactions with atmospheric oxygen. This review focuses on local and thermally induced interactions of MoS2 crystals and single MoS2 flakes. First, experimentally observed data for oxygen-mediated thermally induced morphological and chemical changes of the MoS2 crystals and single MoS2 flakes are presented. Second, state-of-the-art mechanistic insight from computer simulations and arising open questions are discussed. Finally, the properties and fate of the Mo oxides arising from thermal oxidation are reviewed, and future directions into the research of the local MoS2/MoOx interface are provided.
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Affiliation(s)
- Robert Szoszkiewicz
- Faculty of Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089 Warsaw, Poland
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20
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Dragoman M, Aldrigo M, Dragoman D, Iordanescu S, Dinescu A, Modreanu M. The Rise of Ferroelectricity at Nanoscale: Nanoelectronics is rediscovering the ferroelectricity. IEEE NANOTECHNOLOGY MAGAZINE 2021. [DOI: 10.1109/mnano.2021.3098217] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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21
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Ivanov AI, Prinz VY, Antonova IV, Gutakovskii AK. Resistive switching on individual V 2O 5 nanoparticles encapsulated in fluorinated graphene films. Phys Chem Chem Phys 2021; 23:20434-20443. [PMID: 34494063 DOI: 10.1039/d1cp02930d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Memristors currently attract much attention as basic building blocks for future neuromorphic electronics. Due to their unusual electronic, optical, magnetic, electrochemical, and structural properties, transition metal oxides offer much potential in the development of memristors. Recent trends in the design and fabrication of electronic devices have led to miniaturization of their working elements, with nanometer-sized structures enjoying increasing demand. In the present study, we investigated resistive switching on individual vanadium oxide (V2O5) crystal-hydrate nanoparticles, 2 to 10 nm in size, encapsulated in fluorinated graphene (FG). Measurements using a conductive atomic force microscope (c-AFM) probe showed that the core-shell V2O5/FG nanoparticles make it possible to achieve bipolar resistive switching, reproducible during 104 switching cycles, with the ON/OFF current ratio reaching 103-105. The switching voltage of the structures depends on the thickness of the FG shells of the composite particles and equals ∼2-4 V. It is shown that the encapsulation of V2O5 particles in fluorinated graphene ensures a high stability of the resistive switching effect and, simultaneously, prevents the escape of water from the crystalline vanadium oxide hydrates. A qualitative model is proposed to describe the bipolar resistive switching effect in examined structures. Results reported in the present article will prove useful in creating bipolar nanoswitches.
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Affiliation(s)
- Artem I Ivanov
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090, Novosibirsk, Russia.
| | - Victor Ya Prinz
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090, Novosibirsk, Russia.
| | - Irina V Antonova
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090, Novosibirsk, Russia.
| | - Anton K Gutakovskii
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090, Novosibirsk, Russia.
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22
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Chen K, Yin Y, Song C, Liu Z, Wang X, Wu Y, Zhang J, Zhao J, Tang M, Liu J. Two-dimensional triphenylamine-based polymers for ultrastable volatile memory with ultrahigh on/off ratio. POLYMER 2021. [DOI: 10.1016/j.polymer.2021.124076] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
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23
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Lin YC, Matsuda M, Chen CK, Yang WC, Chueh CC, Higashihara T, Chen WC. Investigation of the Mobility–Stretchability Properties of Naphthalenediimide-Based Conjugated Random Terpolymers with a Functionalized Conjugation Break Spacer. Macromolecules 2021. [DOI: 10.1021/acs.macromol.1c00534] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Megumi Matsuda
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Chun-Kai Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Tomoya Higashihara
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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24
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Li YX, Dong XM, Yu MN, Liu W, Nie YJ, Zhang J, Xie LH, Xu CX, Liu JQ, Huang W. A Bio-Inspired Molecular Design Strategy toward 2D Organic Semiconductor Crystals with Superior Integrated Optoelectronic Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102060. [PMID: 34288427 DOI: 10.1002/smll.202102060] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2021] [Revised: 05/08/2021] [Indexed: 06/13/2023]
Abstract
Inspired by the 2D bilayer lipid membranes in nature, a unique supramolecular "push-pull" synergetic strategy toward self-assembled 2D organic crystals (2DOCs) is proposed in this work, which can effectively suppress the interlayer 3D stacking while maintaining the assembly of the intralayer for 2D growth. For this purpose, a model molecule PF-Py consisting of a planar supramolecular "attractor" and a nonplanar steric "repellor" is designed for the solution self-assembly process. Well-defined 2DOCs including crystal nanosheets and millimeter-sized crystal films with layered amphiphile-like packing are obtained, which is analogical to the cell membranes of living organisms. Thanks to the special packing mode, the 2DOCs have fascinating integrated photoelectric property, with high mobility of 7.8 × 10-2 cm2 V-1 s-1 , high crystalline state photoluminescence quantum yield of 55%, and superior deep-blue laser characteristics with a low threshold of 5.51 µJ cm-2 . This supramolecular synergetic strategy advances the design of 2D organic semiconductor crystals for high performance optoelectronics.
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Affiliation(s)
- Yin-Xiang Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Xue-Mei Dong
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Meng-Na Yu
- Centre for Molecular Systems and Organic Devices (CMSOD), State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials(IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wei Liu
- State Key Laboratory of Bioelectronics, School of Biological Sciences and Medical Engineering, Southeast University, 2 Sipailou, Nanjing, 210096, P. R. China
| | - Yi-Jie Nie
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Jing Zhang
- Centre for Molecular Systems and Organic Devices (CMSOD), State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials(IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Ling-Hai Xie
- Centre for Molecular Systems and Organic Devices (CMSOD), State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials(IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Chun-Xiang Xu
- State Key Laboratory of Bioelectronics, School of Biological Sciences and Medical Engineering, Southeast University, 2 Sipailou, Nanjing, 210096, P. R. China
| | - Ju-Qing Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, China
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25
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Huang Y, Lin X, Chen B, Zheng H, Chen Z, Li H, Zheng S. Thermal‐Responsive Polyoxometalate–Metalloviologen Hybrid: Reversible Intermolecular Three‐Component Reaction and Temperature‐Regulated Resistive Switching Behaviors. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202104333] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- You‐Ren Huang
- State Key Laboratory of Photocatalysis on Energy and Environment College of Chemistry Fuzhou University Fujian 350108 China
| | - Xiang‐Ling Lin
- State Key Laboratory of Photocatalysis on Energy and Environment College of Chemistry Fuzhou University Fujian 350108 China
| | - Bin Chen
- State Key Laboratory of Photocatalysis on Energy and Environment College of Chemistry Fuzhou University Fujian 350108 China
| | - Hui‐Dong Zheng
- Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals Fuzhou University Fujian 350108 China
| | - Zhi‐Rong Chen
- State Key Laboratory of Photocatalysis on Energy and Environment College of Chemistry Fuzhou University Fujian 350108 China
| | - Hao‐Hong Li
- State Key Laboratory of Photocatalysis on Energy and Environment College of Chemistry Fuzhou University Fujian 350108 China
- Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals Fuzhou University Fujian 350108 China
| | - Shou‐Tian Zheng
- State Key Laboratory of Photocatalysis on Energy and Environment College of Chemistry Fuzhou University Fujian 350108 China
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26
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Huang YR, Lin XL, Chen B, Zheng HD, Chen ZR, Li HH, Zheng ST. Thermal-Responsive Polyoxometalate-Metalloviologen Hybrid: Reversible Intermolecular Three-Component Reaction and Temperature-Regulated Resistive Switching Behaviors. Angew Chem Int Ed Engl 2021; 60:16911-16916. [PMID: 34060186 DOI: 10.1002/anie.202104333] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Indexed: 02/06/2023]
Abstract
The development of new-type memristors with special performance is of great interest. Herein, an inorganic-organic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with unique temperature-regulated resistive switching behaviors. The hybrid POM not only exhibits tunable thermochromic properties, but also thermal-induced reversible aggregation and disaggregation reactions, leading to reversible structural transformations in SCSC fashion. Further, the memory device using the hybrid POM as active layer exhibits uncommon performance, which can keep resistive switching silent in the low temperature range of 30-150 °C, but show nonvolatile memory behavior in the high temperature range of 150-270 °C. Particularly, the silent and working states at three special temperatures (30, 150 and 270 °C) can be monitored by chromism. The correlation between structure and resistive switching property of the material has been discussed. The work demonstrates that crystalline inorganic-organic hybrid POMs are promising materials for making memristors with superior performance.
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Affiliation(s)
- You-Ren Huang
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, 350108, China
| | - Xiang-Ling Lin
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, 350108, China
| | - Bin Chen
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, 350108, China
| | - Hui-Dong Zheng
- Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, Fuzhou University, Fujian, 350108, China
| | - Zhi-Rong Chen
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, 350108, China
| | - Hao-Hong Li
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, 350108, China.,Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, Fuzhou University, Fujian, 350108, China
| | - Shou-Tian Zheng
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, 350108, China
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27
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Pradhan RR, Bera J, Betal A, Dagar P, Sahu S. Hot Injection-Based Synthesized Colloidal CdSe Quantum Dots Embedded in Poly(4-vinylpyridine) (PVP) Matrix Form a Nanoscale Heterostructure for a High On-Off Ratio Memory-Switching Device. ACS APPLIED MATERIALS & INTERFACES 2021; 13:25064-25071. [PMID: 34008945 DOI: 10.1021/acsami.1c02702] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Chalcogenide-based quantum dots are useful for the application of memory-switching devices because of the control in the trap states in the materials. The control in the trap states can be achieved using a hot-injection colloidal synthesis method that produces temperature-dependent size-variable quantum dots. In addition to this, formation of a nanoscale heterostructure with an insulating material adds to the charge-trapped switching mechanism. Here, we have shown that the colloidal monodispersed CdSe quantum dots and poly(4-vinylpyridine) (PVP) formed a nanoscale heterostructure between themselves when taken in a suitable ratio to fabricate a device. This heterostructure helps realize memory-switching in the device with a maximum on-off current ratio of 105. The switching in the device is mainly due to the trap states in the CdSe quantum dots. The conduction in the off state is due to thermal charge injection and space charge injection conduction and in the on state, due to the Ohmic conduction mechanism.
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Affiliation(s)
- Rakesh Rosan Pradhan
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, India
| | - Jayanta Bera
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, India
| | - Atanu Betal
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, India
| | - Parveen Dagar
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, India
| | - Satyajit Sahu
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, India
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28
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Das A, Bolleddu R, Singh AK, Bandyopadhyay D. Physicochemical defect guided dewetting of ultrathin films to fabricate nanoscale patterns. NANOTECHNOLOGY 2021; 32:195303. [PMID: 33535200 DOI: 10.1088/1361-6528/abe2c8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Pathways to fabricate self-organized nanostructures have been identified exploiting the instabilities of ultrathin (<100 nm) polystyrene (PS) film on the polydimethylsiloxane (PDMS) substrates loaded with discrete and closely packed gold nanoparticles (AuNPs). The AuNPs were deposited on the PDMS substrates by chemical treatment, and the size and periodicity of the AuNPs were varied before coating the PS films. The study unveils that the physicochemical heterogeneity created by the AuNPs on the PDMS surface could guide the hole-formation, influence the average spacing between the holes formed at the initial dewetting stage, and affects the spacing and periodicity of the droplets formed at the end of the dewetting phase. The size and spacing of the holes and the droplets could be tuned by varying the nanoparticle loading on the PDMS substrate. Interestingly, as compared to the dewetting of PS films on the homogeneous PDMS surfaces, the AuNP guided dewetted patterns show ten-fold miniaturization, leading to the formation of the micro-holes and nanodroplets. The spacing between the droplets could also see a ten-fold reduction resulting in high-density random patterns on the PDMS substrate. Further, the use of a physicochemical substrate with varying density of physicochemical heterogeneities could impose a long-range order to the dewetted patterns to develop a gradient surface. The reported results can be of significance in the fabrication of high-density nanostructures exploiting the self-organized instabilities of thin polymers films.
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Affiliation(s)
- Abhijna Das
- Department of Chemical Engineering, Indian Institute of Technology Guwahati, Assam 781039, India
| | - Ravi Bolleddu
- Department of Chemical Engineering, Indian Institute of Technology Guwahati, Assam 781039, India
| | - Amit Kumar Singh
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Assam 781039, India
| | - Dipankar Bandyopadhyay
- Department of Chemical Engineering, Indian Institute of Technology Guwahati, Assam 781039, India
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Assam 781039, India
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29
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Shi J, Li J, Wang Y, Cheng J, Zhang CY. Recent advances in MoS 2-based photothermal therapy for cancer and infectious disease treatment. J Mater Chem B 2021; 8:5793-5807. [PMID: 32597915 DOI: 10.1039/d0tb01018a] [Citation(s) in RCA: 47] [Impact Index Per Article: 15.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
Photothermal therapy (PTT) is a treatment combining laser irradiation and a photothermal transduction agent (PTA) to generate hyperthermia, which is used to efficiently and effectively treat cancer and prevent bacteria-induced infectious diseases. MoS2, an increasingly used two-dimensional transition metal dichalcogenide, which shows high absorbance in the near infrared (NIR) laser region, has been extensively utilized as a novel PTA in biomedical applications. The use of MoS2 as an advanced photoabsorbing agent has introduced a more efficient cancer therapy and improved antibacterial efficacy. In this review, we firstly summarize the recent advances in the MoS2-based platform for PTT in cancer and bacteria-induced infectious diseases treatments. We then discuss that the combination of MoS2-based PTT and other biomedical methods along with multimodality imaging, such as chemotherapy, photodynamic therapy (PDT) and immunotherapy, might be a promising strategy for cancer treatment. Furthermore, a new concept is proposed wherein MoS2-based PTT and combined therapies based on this could be more effective for the treatment of various bacteria-induced infectious diseases. Finally, research progress, challenges, and perspectives for the future development of this MoS2-based platform in cancer and bacteria-induced infectious disease treatments are discussed and concluded. Collectively, we think that MoS2-based PTT with high therapeutic efficacy and minimal side-effects could be potentially applied in clinical settings to improve cancer and infectious disease treatments.
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Affiliation(s)
- Jinping Shi
- Advanced Research Institute for Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China.
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30
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González-García A, López-Pérez W, González-Hernández R, Bacaksiz C, Šabani D, Milošević MV, Peeters FM. Transition-metal adatoms on 2D-GaAs: a route to chiral magnetic 2D materials by design. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:145803. [PMID: 33503605 DOI: 10.1088/1361-648x/abe077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Accepted: 01/27/2021] [Indexed: 06/12/2023]
Abstract
Using relativistic density-functional calculations, we examine the magneto-crystalline anisotropy and exchange properties of transition-metal atoms adsorbed on 2D-GaAs. We show that single Mn and Mo atom (Co and Os) strongly bind on 2D-GaAs, and induce local out-of-plane (in-plane) magnetic anisotropy. When a pair of TM atoms is adsorbed on 2D-GaAs in a close range from each other, magnetisation properties change (become tunable) with respect to concentrations and ordering of the adatoms. In all cases, we reveal presence of strong Dzyaloshinskii-Moriya interaction. These results indicate novel pathways towards two-dimensional chiral magnetic materials by design, tailored for desired applications in magneto-electronics.
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Affiliation(s)
- A González-García
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - W López-Pérez
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
| | - R González-Hernández
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
| | - C Bacaksiz
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
- Bremen Center for Computational Material Science (BCCMS), Bremen D-28359, Germany
- Computational Science Research Center, Beijing and Computational Science and Applied Research Institute Shenzhen, Shenzhen, People's Republic of China
| | - D Šabani
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
| | - M V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
| | - F M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
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31
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Ge R, Wu X, Liang L, Hus SM, Gu Y, Okogbue E, Chou H, Shi J, Zhang Y, Banerjee SK, Jung Y, Lee JC, Akinwande D. A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007792. [PMID: 33368706 DOI: 10.1002/adma.202007792] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Indexed: 06/12/2023]
Abstract
Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2 /MoS2 ), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation-diffusion-adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.
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Affiliation(s)
- Ruijing Ge
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Xiaohan Wu
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Saban M Hus
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Yuqian Gu
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Emmanuel Okogbue
- Nanoscience Technology Center and Department of Electrical Engineering, University of Central Florida, Orlando, FL, 32826, USA
| | - Harry Chou
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Sanjay K Banerjee
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Yeonwoong Jung
- Nanoscience Technology Center and Department of Electrical Engineering, University of Central Florida, Orlando, FL, 32826, USA
- Department of Materials Science and Technology, University of Central Florida, Orlando, FL, 32816, USA
| | - Jack C Lee
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
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32
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Carlos E, Branquinho R, Martins R, Kiazadeh A, Fortunato E. Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004328. [PMID: 33314334 DOI: 10.1002/adma.202004328] [Citation(s) in RCA: 41] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2020] [Revised: 09/08/2020] [Indexed: 06/12/2023]
Abstract
Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra-low power and high-density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up-scale production. Solution-processing methods have been improved, being now a reliable technology that offers many advantages for resistive random-access memory (RRAM) such as high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures. Solution-based metal oxide RRAM devices are emergent and promising non-volatile memories for future electronics. In this review, a brief history of non-volatile memories is highlighted as well as the present status of solution-based metal oxide resistive random-access memory (S-RRAM). Then, a focus on describing the solution synthesis parameters of S-RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S-RRAM that will allow their large-area manufacturing. Finally, the figures of merit and the main challenges in S-RRAMs are discussed and future trends are proposed.
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Affiliation(s)
- Emanuel Carlos
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Rita Branquinho
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Rodrigo Martins
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Asal Kiazadeh
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Elvira Fortunato
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
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33
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Dragoman M, Dinescu A, Dragoman D, Palade C, Moldovan A, Dinescu M, Teodorescu VS, Ciurea ML. Wafer-scale graphene-ferroelectric HfO 2/Ge-HfO 2/HfO 2 transistors acting as three-terminal memristors. NANOTECHNOLOGY 2020; 31:495207. [PMID: 32946424 DOI: 10.1088/1361-6528/abb2bf] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge-HfO2/HfO2 three-layer structure. This kind of transistor has a switching ratio of 103 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation.
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Affiliation(s)
- M Dragoman
- National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, Voluntari 077190, Romania
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34
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Lin YC, Huang YW, Hung CC, Chiang YC, Chen CK, Hsu LC, Chueh CC, Chen WC. Backbone Engineering of Diketopyrrolopyrrole-Based Conjugated Polymers through Random Terpolymerization for Improved Mobility-Stretchability Property. ACS APPLIED MATERIALS & INTERFACES 2020; 12:50648-50659. [PMID: 33138353 DOI: 10.1021/acsami.0c14592] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Conjugated polymers synthesized through random terpolymerization have recently attracted great research interest due to the synergetic effect on the polymer's crystallinity and semiconducting properties. Several studies have demonstrated the efficacy of random terpolymerization in fine-tuning the aggregation behavior and optoelectronic property of conjugated polymers to yield enhanced device performance. However, as an influential approach of backbone engineering, its efficacy in modulating the mobility-stretchability property of high-performance conjugated polymers has not been fuller explored to date. Herein, a series of random terpolymers based on the diketopyrrolopyrrole-bithiophene (DPP-2T) backbone incorporating different amounts of isoindigo (IID) unit are synthesized, and their structure-mobility-stretchability correlation is thoroughly investigated. Our results reveal that random terpolymers containing a low IID content (DPP95 and DPP90) show enhanced interchain packing and solid-state aggregation to result in improved charge-transporting performance (can reach 4 order higher) compared to the parent polymer DPP100. In addition, owing to the enriched amorphous feature, DPP95 and DPP90 deliver an improved orthogonal mobility (μh) of >0.01 cm2 V-1 s-1 under a 100% strain, higher than the value (∼0.002 cm2 V-1 s-1) of DPP100. Moreover, DPP95 even yields 20% enhanced orthogonal μh retention after 800 stretching-releasing cycles with 60% strain. As concluded from a series of analyses, the improved mobility-stretchability property exerted by random terpolymerization arises from the enriched amorphous feature and enhanced aggregation behavior imposed by the geometry mismatch between different acceptors (DPP and IID). This study demonstrates that backbone engineering through rational random terpolymerization not only enhances the mobility-stretchability of a conjugated polymer but also realizes a better mechanical endurance, providing a new perspective for the design of high-performance stretchable conjugated polymers.
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Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yen-Wen Huang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Chien Hung
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chun-Kai Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Li-Che Hsu
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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35
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Ghosh SK, Perla VK, Mallick K, Pal T. Ammonium phosphomolybdate: a material for dielectric crossover and resistive switching performance. NANOSCALE ADVANCES 2020; 2:5343-5351. [PMID: 36132023 PMCID: PMC9418341 DOI: 10.1039/d0na00481b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Accepted: 10/04/2020] [Indexed: 06/15/2023]
Abstract
The yellow ammonium phosphomolybdate [(NH4)3PMo12O40] (YAPM) is a robust and elegant compound that has found innumerable field applications. Herein, we have shown that this inorganic polymer serves as a novel dielectric material and a compound for memory device fabrication. It displays changeable dielectric performance and ac conductivity under UV (∼365 nm) irradiation. Drastic lowering of the dielectric constant (ε') was observed with the increase in dielectric loss factor, which was ascertained due to electron accumulation under UV exposure producing green APM (GAPM). The contributions of the Maxwell-Wagner polarization and the dipolar relaxation are correlated with the charge transfer and dielectric contribution of the material. Interestingly, the pressure-induced reduction of Mo(vi) to Mo(v) is reported for the first time and is similar to UV-exposed mixed-valence GAPM, which was corroborated by EPR spectra. In the ac signal, the crossover from quantum mechanical tunneling to hopping conduction is an adequate explanation for YAPM under UV irradiation. The fabricated device Au‖YAPM‖Au on a flexible paper substrate shows a resistive memory behavior that is modeled as a Schottky-type emission (SE) and Poole-Frenkel (PF) carrier transport for the OFF and ON states, respectively. The device exhibited a constant ON-OFF current ratio of 2 × 102 for YAPM. The OFF state endurance of the device (with 3 V pulses having 1 s time-period) under UV showed a steady increment current strength with time. After 100 s of UV exposure, the Au‖YAPM‖Au device became Au‖GAPM‖Au, and the conductivity completely shifted to a stable ON-state (at 300 s).
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Affiliation(s)
- Sarit K Ghosh
- Department of Chemical Sciences, University of Johannesburg P.O. Box 524, Auckland Park 2006, Kingsway Campus South Africa
| | - Venketa K Perla
- Department of Chemical Sciences, University of Johannesburg P.O. Box 524, Auckland Park 2006, Kingsway Campus South Africa
| | - Kaushik Mallick
- Department of Chemical Sciences, University of Johannesburg P.O. Box 524, Auckland Park 2006, Kingsway Campus South Africa
| | - Tarasankar Pal
- Department of Chemical Sciences, University of Johannesburg P.O. Box 524, Auckland Park 2006, Kingsway Campus South Africa
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36
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Migliato Marega G, Zhao Y, Avsar A, Wang Z, Tripathi M, Radenovic A, Kis A. Logic-in-memory based on an atomically thin semiconductor. Nature 2020; 587:72-77. [PMID: 33149289 PMCID: PMC7116757 DOI: 10.1038/s41586-020-2861-0] [Citation(s) in RCA: 127] [Impact Index Per Article: 31.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2020] [Accepted: 08/26/2020] [Indexed: 11/12/2022]
Abstract
The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von-Neumann architectures, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage1–3, thus promising to reduce the energy cost of data-centric computing significantly4. While there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials5,6 such as semiconducting MoS2 could stand out as a promising candidate to face this obstacle thanks to their exceptional electrical and mechanical properties7–9. Here, we explore large-area grown MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFET). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits where logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and functionally complete sets of functions. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.
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Affiliation(s)
- Guilherme Migliato Marega
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Yanfei Zhao
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Ahmet Avsar
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Zhenyu Wang
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Mukesh Tripathi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Aleksandra Radenovic
- Institute of Bioengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Andras Kis
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland. .,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
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37
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Yang R, Cheng F, Zhao Y, Ye S. Probing the Dielectric Effects on the Colloidal 2D Perovskite Oxides by Eu 3+ Luminescence. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44961-44969. [PMID: 32914954 DOI: 10.1021/acsami.0c12558] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Solution-processing technique of two-dimensional (2D) materials requires the knowledge of the dielectric effects on mutual interaction of each component and the layer structure variation. This research uses the magnetic dipole (MD) transition of intentionally doped Eu3+, which is dependent on the dielectric environments, as an optical probe to study the dielectric effects on the colloidal charge-bearing [Ca1.8Eu0.1Na0.1Nb3O10]- perovskite nanosheets (NSs) in various solvents. Results reveal that the solvent molecules with longer alkyl chain could more easily impact the ligands on the surface of the NSs, leading to a weaker interaction between the ligands and the NSs as well as less distortion of Eu3+ site (Ca2+ site) at the inner layer of the NSs. The large-sized ligands would impede the stacking of the NSs, while H+ would make the H+-modified NSs restack more easily. With the assistance of density functional theory (DFT) simulation, it is found that the ligands or the dielectric solvents could distort or relax the surface covalent polyhedra [NbO6]7- to a larger extent than the inner polyhedra. Small-sized ligands and a large thickness with more atomic layers of the NSs can resist structural variation caused by solvents. The acquired knowledge in this research benefits the understanding of the solution-processing technique for industrial application of 2D materials.
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Affiliation(s)
- Ruirui Yang
- State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, China
| | - Fangrui Cheng
- State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, China
| | - Yifei Zhao
- State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, China
| | - Shi Ye
- State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, China
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38
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Thomas A, Resmi AN, Ganguly A, Jinesh KB. Programmable electronic synapse and nonvolatile resistive switches using MoS 2 quantum dots. Sci Rep 2020; 10:12450. [PMID: 32709849 PMCID: PMC7381601 DOI: 10.1038/s41598-020-68822-5] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2020] [Accepted: 06/01/2020] [Indexed: 11/10/2022] Open
Abstract
Brain-inspired computation that mimics the coordinated functioning of neural networks through multitudes of synaptic connections is deemed to be the future of computation to overcome the classical von Neumann bottleneck. The future artificial intelligence circuits require scalable electronic synapse (e-synapses) with very high bit densities and operational speeds. In this respect, nanostructures of two-dimensional materials serve the purpose and offer the scalability of the devices in lateral and vertical dimensions. In this work, we report the nonvolatile bipolar resistive switching and neuromorphic behavior of molybdenum disulfide (MoS2) quantum dots (QD) synthesized using liquid-phase exfoliation method. The ReRAM devices exhibit good resistive switching with an On-Off ratio of 104, with excellent endurance and data retention at a smaller read voltage as compared to the existing MoS2 based memory devices. Besides, we have demonstrated the e-synapse based on MoS2 QD. Similar to our biological synapse, Paired Pulse Facilitation / Depression of short-term memory has been observed in these MoS2 QD based e-synapse devices. This work suggests that MoS2 QD has potential applications in ultra-high-density storage as well as artificial intelligence circuitry in a cost-effective way.
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Affiliation(s)
- Anna Thomas
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India
| | - A N Resmi
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India
| | - Akash Ganguly
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India
| | - K B Jinesh
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India.
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39
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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors. NANOMATERIALS 2020; 10:nano10071404. [PMID: 32707647 PMCID: PMC7408462 DOI: 10.3390/nano10071404] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 07/14/2020] [Accepted: 07/16/2020] [Indexed: 11/16/2022]
Abstract
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.
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40
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Sangwan VK, Hersam MC. Neuromorphic nanoelectronic materials. NATURE NANOTECHNOLOGY 2020; 15:517-528. [PMID: 32123381 DOI: 10.1038/s41565-020-0647-z] [Citation(s) in RCA: 205] [Impact Index Per Article: 51.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2019] [Accepted: 01/23/2020] [Indexed: 05/10/2023]
Abstract
Memristive and nanoionic devices have recently emerged as leading candidates for neuromorphic computing architectures. While top-down fabrication based on conventional bulk materials has enabled many early neuromorphic devices and circuits, bottom-up approaches based on low-dimensional nanomaterials have shown novel device functionality that often better mimics a biological neuron. In addition, the chemical, structural and compositional tunability of low-dimensional nanomaterials coupled with the permutational flexibility enabled by van der Waals heterostructures offers significant opportunities for artificial neural networks. In this Review, we present a critical survey of emerging neuromorphic devices and architectures enabled by quantum dots, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der Waals heterojunctions with a particular emphasis on bio-inspired device responses that are uniquely enabled by low-dimensional topology, quantum confinement and interfaces. We also provide a forward-looking perspective on the opportunities and challenges of neuromorphic nanoelectronic materials in comparison with more mature technologies based on traditional bulk electronic materials.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
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41
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Yin L, Cheng R, Wang Z, Wang F, Sendeku MG, Wen Y, Zhan X, He J. Two-Dimensional Unipolar Memristors with Logic and Memory Functions. NANO LETTERS 2020; 20:4144-4152. [PMID: 32369375 DOI: 10.1021/acs.nanolett.0c00002] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional materials have been widely used in electronics due to their electrical properties that are not accessible in traditional materials. Here, we present the first demonstration of logic functions of unipolar memristors made of functionalized HfSe2-xOx flakes and memtransistors made of MoS2/graphene/HfSe2-xOx van der Waals heterostructures. The two-terminal memristors exhibit stable unipolar switching behavior with high switching ratio (>106), high operating temperature (106 °C), long-term endurance (>104 s), and multibit data storage and can operate as memory latches and logic gates. Benefiting from these superior memristive properties, the three-terminal heterostructure memtransistors show wide tunability in electrical switching behaviors, which can simultaneously implement logic operation and data storage. Finally, we investigate their application prospect in logical units with memory capability, such as D-type flip-flop. These results demonstrate the potential of two-dimensional materials for resistive switching applications and open up an avenue for future in-memory computing.
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Affiliation(s)
- Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China
| | - Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China
| | - Yao Wen
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xueying Zhan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
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42
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Wu YS, Lin YC, Hung SY, Chen CK, Chiang YC, Chueh CC, Chen WC. Investigation of the Mobility–Stretchability Relationship of Ester-Substituted Polythiophene Derivatives. Macromolecules 2020. [DOI: 10.1021/acs.macromol.0c00193] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Affiliation(s)
- Ying-Sheng Wu
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Sheng-Yuan Hung
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chun-Kai Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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43
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Jian M, Zhang Y, Liu Z. Natural Biopolymers for Flexible Sensing and Energy Devices. CHINESE JOURNAL OF POLYMER SCIENCE 2020. [DOI: 10.1007/s10118-020-2379-9] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
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44
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Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device. ELECTRONICS 2020. [DOI: 10.3390/electronics9020287] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a synthesized ZnO–rGO as an active layer on fluorine-doped tin oxide (FTO)-coated glass substrate. Aluminum (Al) is deposited as a top metal contact on the ZnO–rGO active layer to complete the device. Photo annealing was used to reduce the GO to rGO to make the proposed method suitable for fabricating ZnO–rGO thin-film devices on flexible substrates. The electrical characterization of the Al–ZnO–rGO–FTO device confirms the coexistence of memristive and memimpedance characteristics. The coexistence of memory resistance and memory impedance in the same device could be valuable for developing novel programmable analog filters and self-resonating circuits and systems.
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45
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Liu X, Zhang S, Guo S, Cai B, Yang SA, Shan F, Pumera M, Zeng H. Advances of 2D bismuth in energy sciences. Chem Soc Rev 2020; 49:263-285. [PMID: 31825417 DOI: 10.1039/c9cs00551j] [Citation(s) in RCA: 62] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Since graphene has been successfully exfoliated, two-dimensional (2D) materials constitute a vibrant research field and open vast perspectives in high-performance applications. Among them, bismuthene and 2D bismuth (Bi) are unique with superior properties to fabricate state-of-the-art energy saving, storage and conversion devices. The largest experimentally determined bulk gap, even larger than those of stanene and antimonene, allows 2D Bi to be the most promising candidate to construct room-temperature topological insulators. Moreover, 2D Bi exhibits cyclability for high-performance sodium-ion batteries, and the enlarged surface together with the good electrochemical activity renders it an efficient electrocatalyst for energy conversion. Also, the air-stability of 2D Bi is better than that of silicene, germanene, phosphorene and arsenene, which could enable more practical applications. This review aims to thoroughly explore the fundamentals of 2D Bi and its improved fabrication methods, in order to further bridge gaps between theoretical predictions and experimental achievements in its energy-related applications. We begin with an introduction of the status of 2D Bi in the 2D-material family, which is followed by descriptions of its intrinsic properties along with various fabrication methods. The vast implications of 2D Bi for high-performance devices can be envisioned to add a new pillar in energy sciences. In addition, in the context of recent pioneering studies on moiré superlattices of other 2D materials, we hope that the improved manipulation techniques of bismuthene, along with its unique properties, might even enable 2D Bi to play an important role in future energy-related twistronics.
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Affiliation(s)
- Xuhai Liu
- College of Microtechnology & Nanotechnology, Qingdao University, Qingdao 266071, China
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46
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Ozaki M, Yoshida S, Oura M, Tsuruoka T, Usui K. Effect of tryptophan residues on gold mineralization by a gold reducing peptide. RSC Adv 2020; 10:40461-40466. [PMID: 35520858 PMCID: PMC9057565 DOI: 10.1039/d0ra07098j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2020] [Accepted: 10/17/2020] [Indexed: 11/21/2022] Open
Abstract
AuBP1, obtained by phage display selection, was previously shown to produce gold nanoparticles without reducing agents. The tryptophan (Trp) residue located at the N-terminus of this peptide contributes to the reduction of Au3+ to Au0 and is involved in the nucleation and crystal growth of gold nanoparticles. However, clear guidelines for relationships between the number of Trp residues in the peptide and its gold reducing ability have not been established. We focused on gold mineralization and attempted to elucidate aspects of the underlying mechanism. We performed a detailed evaluation of the effects of modifying the N-terminus of the core sequence on gold mineralization without reducing agents. Besides, advantages of utilizing peptides in manufacturing gold nanoparticles are shown. UV-Vis measurements, TEM observations, and kinetic analyses were used to show that increasing the number of Trp residues in the peptide increases the reducing ability, causing predominance of the nucleation reaction and the production of small gold nanoparticles. In addition, these peptides also had the ability as a dispersant to protect the surface of gold nanoparticles. Furthermore, the catalytic activity of mineralized gold nanoparticles with peptides was higher than that of a commercial gold nanoparticle. This study should help to elucidate the relationship between peptide sequence and mineralization ability for use in materials chemistry. Increasing the number of tryptophan (Trp) in peptides led to higher gold reducing ability and the peptides could disperse the generated gold-nanoparticles.![]()
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Affiliation(s)
- Makoto Ozaki
- Faculty of Frontiers of Innovative Research in Science and Technology (FIRST)
- Konan University
- Kobe
- Japan
| | - Shuhei Yoshida
- Faculty of Frontiers of Innovative Research in Science and Technology (FIRST)
- Konan University
- Kobe
- Japan
| | - Maho Oura
- Faculty of Frontiers of Innovative Research in Science and Technology (FIRST)
- Konan University
- Kobe
- Japan
| | - Takaaki Tsuruoka
- Faculty of Frontiers of Innovative Research in Science and Technology (FIRST)
- Konan University
- Kobe
- Japan
| | - Kenji Usui
- Faculty of Frontiers of Innovative Research in Science and Technology (FIRST)
- Konan University
- Kobe
- Japan
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Pan H, Cao L, Chu H, Wang Y, Zhao S, Li Y, Qi N, Sun Z, Jiang X, Wang R, Zhang H, Li D. Broadband Nonlinear Optical Response of InSe Nanosheets for the Pulse Generation From 1 to 2 μm. ACS APPLIED MATERIALS & INTERFACES 2019; 11:48281-48289. [PMID: 31834767 DOI: 10.1021/acsami.9b18632] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Few-layered InSe nanosheets were fabricated by the simple liquid-phase exfoliation method. The morphology and crystal structure features of InSe nanosheet sample were characterized comprehensively. The photoluminescence (PL) spectrum indicated that the liquid-phase exfoliated InSe nanosheets contained variously layered nanoflakes, where eight layers nanosheets dominate. In addition, the first-principle simulation was carried out to describe the electron density of states (DOS) and the electronic band structures. Moreover, the few-layered InSe nanosheets performed excellent nonlinear absorption properties in a broad spectral band. As an application, the stable passively Q-switched (PQS) lasers with few-layered InSe nanosheets saturable absorbers (SAs) were realized with the operating wavelengths at 1.06, 1.34, and 1.91 μm. The shortest pulse durations were 599, 520, and 210 ns, respectively. Our results confirmed that the few-layered InSe nanosheets could be an excellent candidate for pulsed lasers in wide spectral bands.
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Affiliation(s)
- Han Pan
- School of Information Science and Engineering , Shandong University , Qingdao 266237 , China
| | - Lihua Cao
- School of Information Science and Engineering , Shandong University , Qingdao 266237 , China
| | - Hongwei Chu
- School of Information Science and Engineering , Shandong University , Qingdao 266237 , China
| | - Yunzheng Wang
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , China
| | - Shengzhi Zhao
- School of Information Science and Engineering , Shandong University , Qingdao 266237 , China
| | - Ying Li
- Key Laboratory of Colloid and Interface Chemistry of State Education Ministry, School of Chemistry and Chemical Engineering , Shandong University , Jinan 250100 , China
| | - Na Qi
- Key Laboratory of Colloid and Interface Chemistry of State Education Ministry, School of Chemistry and Chemical Engineering , Shandong University , Jinan 250100 , China
| | - Zhenlu Sun
- School of Information Science and Engineering , Shandong University , Qingdao 266237 , China
| | - Xiantao Jiang
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , China
| | - Rui Wang
- Department of Electronic Engineering , Xiamen University , Xiamen 361005 , China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , China
| | - Dechun Li
- School of Information Science and Engineering , Shandong University , Qingdao 266237 , China
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48
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Han Y, Wang J, Wan H, Wang S, Hu H, Xiao TH, Cheng Z, Liu T. Solution processable transition metal dichalcogenides-based hybrids for photodetection. NANO MATERIALS SCIENCE 2019. [DOI: 10.1016/j.nanoms.2019.09.010] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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49
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Zhang H, Zhao X, Bai J, Hou Y, Wang S, Wang C, Ma D. Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors. Macromolecules 2019. [DOI: 10.1021/acs.macromol.9b02033] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Affiliation(s)
| | | | | | | | | | | | - Dongge Ma
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China
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50
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Xia C, Liu C, Zhou F, Gu P, Li H, He J, Li Y, Xu Q, Lu J. Tunable Electronic Memory Performances Based on Poly(Triphenylamine) and Its Metal Complex via a SuFEx Click Reaction. Chem Asian J 2019; 14:4296-4302. [DOI: 10.1002/asia.201901234] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2019] [Revised: 10/14/2019] [Indexed: 11/06/2022]
Affiliation(s)
- Chenyu Xia
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Cheng Liu
- Institute of Functional Nano & Soft Materials Laboratory (FUNSOM)Jiangsu Key Laboratory for Carbon-Based Functional MaterialsSoochow University Suzhou 215123 P. R. China
| | - Feng Zhou
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Peiyang Gu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Hua Li
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Jinghui He
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Youyong Li
- Institute of Functional Nano & Soft Materials Laboratory (FUNSOM)Jiangsu Key Laboratory for Carbon-Based Functional MaterialsSoochow University Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
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