Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

A strategy to fabricate nanostructures with sub-nanometer line edge roughness

Line edge roughness (LER) has been an important issue in the nanofabrication research, especially in integrated circuits. Despite numerous research studies has made efforts on achieving smaller LER value, a strategy to achieve sub-nanometer level LER still remains challenging due to inability to deposit energy with a profile of sub-nanometer LER. In this work, we introduce a strategy to fabricate structures with sub-nanometer LER, specifically, we use scanning helium ion beam to expose hydrogen silsesquioxane (HSQ) resist on thin SiNx membrane (∼20 nm) and present the 0.16 nm spatial imaging resolution based on this suspended membrane geometric construction, which is characterized by scanning transmission electron microscope (STEM). The suspended membrane serves as an energy filter of helium ion beam and due to the elimination of backscattering induced secondary electrons, we can systematically study the factors that influences the LER of the fabricated nanostructures. Furthermore, we explore the parameters including step size, designed exposure linewidth (DEL), delivered dosage and resist thickness and choosing the high contrast developer, the process window allows to fabricate lines with 0.2 nm LER is determined. AFM measurement and simulation work further reveal that at specific beam step size and DEL, the nanostructures with minimum LER can only be fabricated at specific resist thickness and dosage.

Fabrication of large-area photonic crystal-modified X-ray scintillator imager for optical coding imaging

The limited pattern area of periodic nanostructures limits the development of practical devices. This study introduces an X-ray interference lithography (XIL) stitching technique to fabricate a large-area (1.5 cm × 1.5 cm) two-dimensional photonic crystal (PhC) on the YAG: Ce scintillator, which functions as an encoder in a high numerical aperture optical encoding imaging system to effectively capture high-frequency information. An X-ray imaging experiment revealed a substantial 7.64 dB improvement in the signal-to-noise ratio (SNR) across a large field of view (2.6 mm × 2.6 mm) and achieved comparable or superior image quality with half the exposure dose. These findings have significant implications for advancing practical applications of X-ray imaging.

Nanoimprint lithography-based replication techniques for fabrication of metal and polymer biomimetic nanostructures for biosensor surface functionalization

Nanostructuring is a promising and successful approach to tailor functional layers and to improve the characteristics of biosensors such as signal transmission and tighter cell-surface coupling. One of the major objectives in biosensing and tissue engineering is the development of interfaces that mimic the natural environment of biosystems composed of extracellular matrix biomolecules. Nevertheless, effective techniques to reconstruct the random distribution of these biomolecules are still not well established. For this reason, the presented work demonstrates different methods based on nanoimprint lithography to replicate randomly distributed natural nanostructures with complex geometries into different polymers and metals. The fidelity of the replicated nanostructures has been evaluated by atomic force microscopy and the attributes of the fabrication processes have been discussed. Finally, different replication techniques have been combined for the biomimetic nanostructuring of the dielectric passivation layer as well the metal electrode surface to develop novel whole-surface-nanostructured microelectrode arrays.

Biomolecular control over local gating in bilayer graphene induced by ferritin

Electrical field-induced charge modulation in graphene-based devices at the nanoscale with ultrahigh density carrier accumulation is important for various practical applications. In bilayer graphene (BLG), inversion symmetry can simply be broken by an external electric field. However, control over charge carrier density at the nanometer scale is a challenging task. We demonstrate local gating of BLG in the nanometer range by adsorption of AfFtnAA (which is a bioengineered ferritin, an iron-storing globular protein with ∅ = 12 nm). Low-temperature electrical transport measurements with field-effect transistors with these AfFtnAA/BLG surfaces show hysteresis with two Dirac peaks. One peak at a gate voltage V_BG = 35 V is associated with pristine BLG, while the second peak at V_BG = 5 V results from local doping by ferritin. This charge trapping at the biomolecular length scale offers a straightforward and non-destructive method to alter the local electronic structure of BLG.

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Local gating with 12 nm resolution by charge trapping in ferritin.

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Adsorption of ferritin on graphene via non-invasive self-assembly.

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Charging controlled via iron oxide loading of ferritin.

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Visualization of individual ferritins on graphene by atomic force microscopy.

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs.

High-efficiency diffraction gratings for EUV and soft x-rays using spin-on-carbon underlayers

We report on the fabrication and characterization of high-resolution gratings with high efficiency in the extreme ultraviolet (EUV) and soft x-ray ranges using spin-on-carbon (SOC) underlayers. We demonstrate the fabrication of diffraction gratings down to 20 nm half-pitch (HP) on Si₃N₄membranes with a bilayer of hydrogen silsesquioxane (HSQ) and spin-on-carbon and show their performance as a grating mask for extreme ultraviolet interference lithography (EUV-IL). High-resolution patterning of HSQ is possible only for thin films due to pattern collapse. The combination of this high-resolution resist with SOC circumvents this problem and enables the fabrication of high aspect ratio nanostructures. Rigorous coupled-wave analysis shows that the bilayer gratings exhibit higher diffraction efficiency than what is feasible with a grating made of HSQ. We also demonstrate a simple and accurate method to experimentally measure the diffraction efficiency of high-resolution gratings by measuring the relative ratio of the dose-to-clear curves of the photoresist. The measured diffraction efficiencies are in good agreement with the theoretically predicted values. Furthermore, we verify our calculations and measurements by printing line/space patterns in chemically amplified resists down to 10 nm HP with both HSQ and bilayer grating masks using EUV-IL. The improved diffraction efficiency of the bilayers is expected to have applications not only in gratings for interference lithography, but also in Fresnel zone plates and gratings for spectroscopy in the EUV and soft x-ray ranges.

Molecular bixbyite-like In12-oxo clusters with tunable functionalization sites for lithography patterning applications

Indium oxides have been widely applied in many technological areas, but their utilization in lithography has not been developed. Herein, we illustrated a family of unprecedented In₁₂-oxo clusters with a general formula [In₁₂(μ₄-O)₄(μ₂-OH)₂(OCH₂CH₂NHCH₂CH₂O)₈(OR)₄X₄]X₂ (where X = Cl or Br; R = CH₃, C₆H₄NO₂ or C₆H₄F), which not only present the largest size record in the family of indium-oxo clusters (InOCs), but also feature the first molecular model of bixbyite-type In₂O₃. Moreover, through the labile coordination sites of the robust diethanolamine-stabilized In₁₂-oxo core, these InOCs can be accurately functionalized with different halides and alcohol or phenol derivatives, producing tunable solubility. Based on the high solution stability as confirmed by ESI-MS analysis, homogeneous films can be fabricated using these In₁₂-oxo clusters by the spin-coating method, which can be further used for electron beam lithography (EBL) patterning studies. Accordingly, the above structural regulations have significantly influenced their corresponding film quality and patterning performance, with bromide or p-nitrophenol functionalized In₁₂-oxo clusters displaying better performance of sub-50 nm lines. Thus, the here developed bixbyite-type In₁₂-oxo cluster starts the research on indium-based patterning materials and provides a new platform for future lithography radiation mechanism studies.

Bixbyite-like In₁₂-oxo clusters with labile coordination sites show tunable solubility, varying film quality and distinct lithography patterning performance.

Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition

Area-selective atomic layer deposition (AS-ALD) is a promising technique for fine nanoscale patterning, which may overcome the drawbacks of conventional top-down approaches for the fabrication of future electronic devices. However, conventional materials and processes often employed for AS-ALD are inadequate for conformal and rapid processing. We introduce a new strategy for AS-ALD based on molecular layer deposition (MLD) that is compatible with large-scale manufacturing. Conformal thin films of "indicone" (indium alkoxide polymer) are fabricated by MLD using INCA-1 (bis(trimethylsily)amidodiethylindium) and HQ (hydroquinone). Then, the MLD indicone films are annealed by a thermal heat treatment under vacuum. The properties of the indicone thin films with different annealing temperatures were measured with multiple optical, physical, and chemical techniques. Interestingly, a nearly complete removal of indium from the film was observed upon annealing to ca. 450 °C and above. The chemical mechanism of the thermal transformation of the indicone film was investigated by density functional theory calculations. Then, the annealed indicone thin films were applied as an inhibiting layer for the subsequent ALD of ZnO, where the deposition of approximately 20 ALD cycles (equivalent to a thickness of approximately 4 nm) of ZnO was successfully inhibited. Finally, patterns of annealed MLD indicone/Si substrates were created on which the area-selective deposition of ZnO was demonstrated.

"Double" displacement Talbot lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns

We describe a new low-cost nanolithographic tool for creating periodic arrays of complex, nano-motifs, across large areas within minutes. Displacement Talbot lithography is combined with lateral nanopositioning to enable large-area patterning with the flexibility of a direct-write system. In this way, we can create different periodic patterns in short timescales using a single mask with no mask degradation. We demonstrate multiple exposures, combined with discrete lateral displacements, and single exposures, with continuous displacements, to achieve image inversion, pitch reduction, and nanogaps between metal nanoparticles. Our approach provides a flexible route to create large-area nanopatterned materials and devices in high volumes.

Parallel direct writing achromatic talbot lithography: a method for large-area arbitrary sub-micron periodic nano-arrays fabrication

Metasurfaces with complex periodic nanoarrays have attracted a large amount of attention over the past decades due to their pronounced plasmonic and photonic properties. Though various metasurface properties have been theoretically and experimentally investigated, the realization of practical metasurface applications remains a big challenge due to very limited large-area complex nanostructure fabrication. In this paper, we demonstrate a parallel direct writing achromatic Talbot lithography (DW-ATL) technique for large-area arbitrary sub-micron periodic nano-arrays fabrication. By using a laser interferometer, the sparse hole/dot arrays obtained by ATL could be stitched precisely between discrete multiple exposures. Complex sub-micron periodic nanoarrays, such as elliptical discs, rods, L-shaped and Y-shaped periodic nanoarrays, with a sub-hundred nm resolution were fabricated over an area of ∼mm².

Nanostructure and Microstructure Fabrication: From Desired Properties to Suitable Processes

When designing a new nanostructure or microstructure, one can follow a processing-based manufacturing pathway, in which the structure properties are defined based on the processing capabilities of the fabrication method at hand. Alternatively, a performance-based pathway can be followed, where the envisioned performance is first defined, and then suitable fabrication methods are sought. To support the latter pathway, fabrication methods are here reviewed based on the geometric and material complexity, resolution, total size, geometric and material diversity, and throughput they can achieve, independently from processing capabilities. Ten groups of fabrication methods are identified and compared in terms of these seven moderators. The highest resolution is obtained with electron beam lithography, with feature sizes below 5 nm. The highest geometric complexity is attained with vat photopolymerization. For high throughput, parallel methods, such as photolithography (≈10¹ m² h^-1 ), are needed. This review offers a decision-making tool for identifying which method to use for fabricating a structure with predefined properties.

Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography

High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of thermal scanning probe lithography (t-SPL), highest resolutions are achieved for shallow patterns. In this work, we study the transfer reliability and the achievable resolution as a function of applied temperature and force. Pattern transfer was reliable if a pattern depth of more than 3 nm was reached and the walls between the patterned lines were slightly elevated. Using this geometry as a benchmark, we studied the formation of 10-20 nm half-pitch dense lines as a function of the applied force and temperature. We found that the best pattern geometry is obtained at a heater temperature of ∼600 °C, which is below or close to the transition from mechanical indentation to thermal evaporation. At this temperature, there still is considerable plastic deformation of the resist, which leads to a reduction of the pattern depth at tight pitch and therefore limits the achievable resolution. By optimizing patterning conditions, we achieved 11 nm half-pitch dense lines in the HM8006 transfer layer and 14 nm half-pitch dense lines and L-lines in silicon. For the 14 nm half-pitch lines in silicon, we measured a line edge roughness of 2.6 nm (3σ) and a feature size of the patterned walls of 7 nm.

Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications

The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.

High throughput fabrication of large-area plasmonic color filters by soft-X-ray interference lithography

Plasmonic color filters in mass production have been restricted from current fabrication technology, which impede their applications. Soft-X-ray interference lithography (XIL) has recently generated considerable interest as a newly developed technique for the production of periodic nano-structures with resolution theoretically below 4 nm. Here we ameliorate XIL by adding an order sorting aperture and designing the light path properly to achieve perfect-stitching nano-patterns and fast fabrication of large-area color filters. The fill factor of nanostructures prepared on ultrathin Ag films can largely affect the transmission minimum of plasmonic color filters. By changing the fill factor, the color can be controlled flexibly, improving the utilization efficiency of the mask in XIL simultaneously. The calculated data agree well with the experimental results. Finally, an underlying mechanism has been uncovered after systematically analyzing the localized surface plasmon polaritons (LSPPs) coupling in electric field distribution.

Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength

Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam.

Recent advances in non-chemically amplified photoresists for next generation IC technology

The present article reviews the recent advances in the area of non-chemically amplified photoresists particularly for sub-30 nm nodes.

Beyond EUV lithography: a comparative study of efficient photoresists' performance

Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra.