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Xia F, Wang D, Cao J, He W, Zhao C, Zeng Z, Zhang B, Liu D, Liu S, Pan J, Liu G, Jiao S, Fang D, Fang X, Liu L, Zhao L, Wang J. Vertical Barrier Heterostructures for Reliable and High-Performance Self-Powered Infrared Detection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:46548-46559. [PMID: 39166356 DOI: 10.1021/acsami.4c04447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
With their fascinating properties, emerging two-dimensional (2D) materials offer innovative ways to prepare high-performance infrared (IR) detectors. However, the current performance of 2D IR photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, sharply raised contact resistance, and deteriorated metal conductivity at nanoscale. Here, we introduce a vertical barrier heterojunction with a structure of PtSe2/GaAs that combines the excellent optoelectronic properties of transition metal sulfides with topological semi-metals, which allows for an adjustable bandgap and high carrier mobility. The heterojunction was fabricated using the wet transfer method. The heterostructures show significant rectification behaviors and photovoltaic effects, which allow it to operate as a self-driven photodetector at zero bias. The photoresponse parameters at 850 nm with zero bias voltage are 67.2 mA W-1, 6.7 × 1012 Jones, 9.8%, 3.8 × 105, 164 μs, and 198 μs for the responsivity, specific detectivity, external quantum efficiency, Ilight/Idark ratio, rise time, and fall time, respectively. Moreover, the heterojunction is highly sensitive to a wide spectral band from ultraviolet to near-infrared (360-1550 nm). At the same time, this heterostructure demonstrates significant potential for applications in IR polarized light detection and room-temperature high-resolution IR imaging. The excellent properties of the heterojunction make it well-suited for high-performance, self-powered IR detection.
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Affiliation(s)
- Fengtian Xia
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Dongbo Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Jiamu Cao
- School of Astronautics, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Wen He
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Chenchen Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Zhi Zeng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Bingke Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Donghao Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Sihang Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Jingwen Pan
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Gang Liu
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, People's Republic of China
| | - Shujie Jiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Lihua Liu
- Administration Department of Science and Technology, Fasten Group, 165 Chengjiang Middle Road, Jiangyin, Jiangsu 214434, People's Republic of China
| | - Liancheng Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
| | - Jinzhong Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China
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Yue L, Li Z, Yu L, Xu K, Liu R, Li C, Li Y, Yang D, Li X, Li Q, Liu B. Radical n-p Conduction Switching and Significant Photoconductivity Enhancement in NbOI 2 via Pressure-Modulated Peierls Distortion. J Am Chem Soc 2024. [PMID: 39196912 DOI: 10.1021/jacs.4c09361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/30/2024]
Abstract
The absence of intrinsic p-type 2D layered semiconductors has hampered the development of 2D devices, particularly in complementary metal-oxide-semiconductor (CMOS) devices and integrated circuits. Developing practical p-type semiconductors and advanced modulation techniques for precise carrier control is paramount to advancing electronic devices and systems. Here, by applying pressure to continuously tune the Peierls distortion in NbOI2, we effectively control the polarity and concentration of carriers and significantly enhance its photoelectric properties. The results demonstrate that by suppressing the off-center displacement of Nb atoms along the in-plane b direction under pressure, NbOI2 undergoes a semiconductor-to-semiconductor phase transition from C2 to C2/m, leading to a significant transition from n-type to p-type carrier behavior. Additionally, the gradual inhibition of internal interactions within Nb-Nb dimers along the in-plane c direction under high pressure facilitates electron delocalization, substantially enhancing the photoelectric properties. The photocurrent is increased by more than 3 orders of magnitude under xenon irradiation, and the spectral response range is continuously red-shifted and extended to 1450 nm. These findings highlight the potential of pressure engineering to adjust photoelectric properties effectively and flexibly, offering valuable insights for designing high-performance p-type two-dimensional semiconductors.
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Affiliation(s)
- Lei Yue
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Zonglun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Linchao Yu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Kunbo Xu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Ran Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Chenyi Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Yanchun Li
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Dongliang Yang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaodong Li
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Quanjun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Bingbing Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
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Huang Z, Tong C, Zhao Y, Jiang L, Deng L, Gao X, He J, Jiang J. An Au 25 nanocluster/MoS 2 vdWaals heterojunction phototransistor for chromamorphic visual-afterimage emulation. NANOSCALE 2024. [PMID: 39189366 DOI: 10.1039/d4nr02350a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Color vision relies on three cone photoreceptors that are sensitive to different wavelengths of light. The interaction of three incident light wavelengths over time creates a fascinating color coupling perception, termed chromamorphic computing. However, the realization of this fascinating characteristic in semiconductor devices remains a great challenge. Herein, a mixed-dimensional optoelectronic transistor based on a novel metal nanocluster Au25(SC12H25)18 and two-dimensional MoS2 van der Waals (vdWaals) heterojunction is proposed for chromamorphic visual-afterimage emulation with red-green-blue three-color spatiotemporal coupling perception. This distinguished molecular-like electronic level of Au25 nanoclusters allows the transistor to have visible light-sensitive properties, endowing it with the ability to perceive color information. Moreover, the chromamorphic functions are realized using a color spatiotemporal coupling approach. By utilizing the photogating effect of light stimulus, the device exhibits visual experience-dependent plasticity in accordance with the Bienenstock-Cooper-Munro (BCM) learning rule. Most importantly, for the first time, intriguing visual afterimages could be implemented using a color sensitization approach based on a close relationship between visual persistence and negative afterimages. These results represent an important step towards a new generation of intelligent visual color perception systems for human-computer interaction, bionic robots, etc.
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Affiliation(s)
- Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China
| | - Chuanjia Tong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Yanbo Zhao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Leyong Jiang
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan 410081, China
| | - Lianwen Deng
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Xiaohui Gao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Jun He
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China
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Küstner F, Ditlbacher H, Hohenau A, Dirin DN, Kovalenko M, Krenn JR. Quantitative photocurrent scanning probe microscopy on PbS quantum dot monolayers. NANOSCALE 2024. [PMID: 39171646 DOI: 10.1039/d4nr02575j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Photoconductive atomic force microscopy can probe monolayers of PbS/perovskite quantum dots (QDs) with a contact area of 1-3 QDs in stable and reproducible acquisition conditions for I/V curves and photocurrent maps. From the measurements, quantitative values for the barrier height, built-in voltage, diffusion constant and ideality factor are deduced with high precision. The data analysis is based on modelling a superposition of the drift current of the photo-excited charges and a diffusion current across the interface barriers, providing physical insight into the underlying processes. Besides looking into PbS/perovskite on an indium tin oxide substrate, it is shown how the photocurrent is modified by changing either the QD ligand (to thiocyanate) or the substrate (to micro- and nanostructured gold). The dependence of the photocurrent on the light irradiance is found to follow a power law with an exponent of 0.64. Generally, quantitative measurements with high spatial resolution (on the single QD level) can provide significant insight into the processes in nanostructured hybrid optoelectronic components.
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Affiliation(s)
- Florian Küstner
- Institute of Physics, University of Graz, 8010 Graz, Austria
| | | | - Andreas Hohenau
- Institute of Physics, University of Graz, 8010 Graz, Austria
| | - Dmitry N Dirin
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Empa - Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, 8600 Dübendorf, Switzerland
| | - Maksym Kovalenko
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Empa - Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, 8600 Dübendorf, Switzerland
| | - Joachim R Krenn
- Institute of Physics, University of Graz, 8010 Graz, Austria
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5
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Bang S, Kang W, Kim D, Suh HC, Kim DH, Kwon C, Jo J, Kim JH, Ko H, Kim KK, Ahn J, Jeong MS. Harnessing Persistent Photocurrent in a 2D Semiconductor-Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory. NANO LETTERS 2024; 24:9889-9897. [PMID: 38985008 DOI: 10.1021/acs.nanolett.4c02173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2024]
Abstract
Recently, 2D semiconductor-based optoelectronic memory has been explored to overcome the limitations of conventional von Neumann architectures by integrating optical sensing and data storage into one device. Persistent photocurrent (PPC), essential for optoelectronic memory, originates from charge carrier trapping according to the Shockley-Read-Hall (SRH) model in 2D semiconductors. The quasi-Fermi level position influences the activation of charge-trapping sites. However, the correlation between quasi-Fermi level modulations and PPC in 2D semiconductors has not been extensively studied. In this study, we demonstrate optoelectronic memory based on a 2D semiconductor-polymer hybrid structure and confirm that the underlying mechanism is charge trapping, as the SRH model explains. Under light illumination, electrons transfer from polyvinylpyrrolidone to p-type tungsten diselenide, resulting in high-level injection and majority carrier-type transitions. The quasi-Fermi level shifts upward with increasing temperature, improving PPC and enabling optoelectronic memory at 433 K. Our findings offer valuable insights into optimizing 2D semiconductor-based optoelectronic memory.
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Affiliation(s)
- Seungho Bang
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Wooyoung Kang
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Dohyeong Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Hyeong Chan Suh
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Dong Hyeon Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Chan Kwon
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Jieun Jo
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Ji-Hong Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Hayoung Ko
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jinho Ahn
- Division of Materials Science and Engineering, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
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6
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Mallick S, Majumder S, Maiti P, Kesavan K, Rahman A, Rath A. Development of Self-Doped Monolayered 2D MoS 2 for Enhanced Photoresponsivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403225. [PMID: 39096114 DOI: 10.1002/smll.202403225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2024] [Revised: 07/24/2024] [Indexed: 08/04/2024]
Abstract
Transition metal dichalcogenides (TMDs) exist in two distinct phases: the thermodynamically stable trigonal prismatic (2H) and the metastable octahedral (1T) phase. Phase engineering has emerged as a potent technique for enhancing the performance of TMDs in optoelectronics applications. Nevertheless, understanding the mechanism of phase transition in TMDs and achieving large-area synthesis of phase-controlled TMDs continue to pose significant challenges. This study presents the synthesis of large-area monolayered 2H-MoS2 and mixed-phase 1T/2H-MoS2 by controlling the growth temperature in the chemical vapor deposition (CVD) method without use of a catalyst. The field-effect transistors (FETs) devices fabricated with 1T/2H-MoS2 mixed-phase show an on/off ratio of 107. Photo response devices fabricated with 1T/2H-MoS2 mixed-phase show ≈55 times enhancement in responsivity (from 0.32 to 17.4 A W-1) and 102 times increase in the detectivity (from 4.1 × 1010 to 2.48 × 1012 cm Hz W-1) compare to 2H-MoS2. Introducing the metallic 1T phase within the 2H phase contributes additional carriers to the material, which prevents the electron-hole recombination and thereby increases the carrier density in the 1T/2H-MoS2 mixed-phase in comparison to 2H-MoS2. This work provides insights into the self-doping effects of 1T phase in 2H MoS2, enabling the tuning of 2D TMDs properties for optoelectronic applications.
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Affiliation(s)
- Sagar Mallick
- Central Characterization Department, CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, Odisha, 751013, India
- Academy of Scientific & Innovative Research, Ghaziabad, 201002, India
| | - Sudipta Majumder
- Indian Institute of Science Education and Research, Dr Homi Bhabha Road, Pashan, Pune, Maharashtra, 411008, India
| | - Paramita Maiti
- Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha, 751005, India
| | - Kamali Kesavan
- Central Characterization Department, CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, Odisha, 751013, India
- Academy of Scientific & Innovative Research, Ghaziabad, 201002, India
| | - Atikur Rahman
- Indian Institute of Science Education and Research, Dr Homi Bhabha Road, Pashan, Pune, Maharashtra, 411008, India
| | - Ashutosh Rath
- Central Characterization Department, CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, Odisha, 751013, India
- Academy of Scientific & Innovative Research, Ghaziabad, 201002, India
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7
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Kumar P, Singh G, Guan X, Roy S, Lee J, Kim IY, Li X, Bu F, Bahadur R, Iyengar SA, Yi J, Zhao D, Ajayan PM, Vinu A. The Rise of Xene Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403881. [PMID: 38899836 DOI: 10.1002/adma.202403881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2024] [Revised: 05/22/2024] [Indexed: 06/21/2024]
Abstract
Xenes, mono-elemental atomic sheets, exhibit Dirac/Dirac-like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti-oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter-layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross-correlations among these factors are essential. Xene-based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.
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Affiliation(s)
- Prashant Kumar
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Gurwinder Singh
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Xinwei Guan
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Soumyabrata Roy
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India
| | - Jangmee Lee
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - In Young Kim
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Xiaomin Li
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Fanxing Bu
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Rohan Bahadur
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Dongyuan Zhao
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
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8
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Napoleonov B, Petrova D, Minev N, Rafailov P, Videva V, Karashanova D, Ranguelov B, Atanasova-Vladimirova S, Strijkova V, Dimov D, Dimitrov D, Marinova V. Growth of Monolayer MoS 2 Flakes via Close Proximity Re-Evaporation. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1213. [PMID: 39057889 PMCID: PMC11280380 DOI: 10.3390/nano14141213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2024] [Revised: 07/11/2024] [Accepted: 07/14/2024] [Indexed: 07/28/2024]
Abstract
We report a two-step growth process of MoS2 nanoflakes using a low-pressure chemical vapor deposition technique. In the first step, a MoS2 layer was synthesized on a c-plane sapphire substrate. This layer was subsequently re-evaporated at a higher temperature to form mono- or few-layer MoS2 flakes. As a result, the close proximity re-evaporation enabled the growth of pristine MoS2 nanoflakes. Atomic force microscopy analysis confirmed the synthesis of nanoclusters/nanoflakes with lateral dimensions of over 10 μm and a flake height of approximately 1.3 nm, demonstrating bi-layer MoS2, whereas transmission electron microscopy analysis revealed triangular MoS2 nanoflakes, with a diffraction pattern proving the presence of single crystalline hexagonal MoS2. Raman data revealed the typical modes of high-quality MoS2 nanoflakes. Finally, we presented the photocurrent dependence of a MoS2-based photoresist under illumination with light-emitting diode of 405 nm wavelength. The measured current-voltage dependence across various luminous flux outlined the sensitivity of MoS2 to polarized light and thus opens further opportunities for applications in high-performance photodetectors with polarization sensitivity.
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Affiliation(s)
- Blagovest Napoleonov
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
| | - Dimitrina Petrova
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
- Faculty of Engineering, South-West University “Neofit Rilski”, 2700 Blagoevgrad, Bulgaria
| | - Nikolay Minev
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
| | - Peter Rafailov
- Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria;
| | - Vladimira Videva
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
- Faculty of Chemistry and Pharmacy, Sofia University, 1 James Bourchier Blvd., 1164 Sofia, Bulgaria
| | - Daniela Karashanova
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
| | - Bogdan Ranguelov
- Institute of Physical Chemistry, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.R.); (S.A.-V.)
| | | | - Velichka Strijkova
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
| | - Deyan Dimov
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
- Department of Physics, University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., 1756 Sofia, Bulgaria
| | - Dimitre Dimitrov
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
- Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria;
| | - Vera Marinova
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria; (B.N.); (D.P.); (V.V.); (D.K.); (V.S.); (D.D.); (D.D.)
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9
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Cao Y, Cao A, Li S, Tang J, Hu R, Shang L, Li Y, Jiang K, Zhang J, Zhu L, Hu Z. Bias-dependent photoresponse of T d-WTe 2grown by chemical vapor deposition. NANOTECHNOLOGY 2024; 35:395201. [PMID: 38955161 DOI: 10.1088/1361-6528/ad5dbf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Accepted: 07/02/2024] [Indexed: 07/04/2024]
Abstract
The type-II Weyl semimetal Td-WTe2is one of the wonder materials for high-performance optoelectronic devices. We report the self-powered Td-WTe2photodetectors and their bias-dependent photoresponse in the visible region (405, 520, 638 nm) driven by the bulk photovoltaic effect. The device shows the responsivity of 15.8 mAW-1and detectivity of 5.2 × 109Jones at 520 nm. Besides, the response time of the WTe2photodetector shows the strong bias-voltage dependent property. This work offers a physical reference for understanding the photoresponse process of Td-WTe2photodetectors.
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Affiliation(s)
- Yupeng Cao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Aiping Cao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Shubing Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Jianli Tang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Rui Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
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10
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Pasquale G, Sun Z, Migliato Marega G, Watanabe K, Taniguchi T, Kis A. Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures. NATURE NANOTECHNOLOGY 2024; 19:941-947. [PMID: 38956321 PMCID: PMC11286520 DOI: 10.1038/s41565-024-01717-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 06/11/2024] [Indexed: 07/04/2024]
Abstract
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K-1 T-1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena.
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Affiliation(s)
- Gabriele Pasquale
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Zhe Sun
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Guilherme Migliato Marega
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Andras Kis
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
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11
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Zheng T, Pan Y, Yang M, Li Z, Zheng Z, Li L, Sun Y, He Y, Wang Q, Cao T, Huo N, Chen Z, Gao W, Xu H, Li J. 2D Free-Standing GeS 1-xSe x with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313721. [PMID: 38669677 DOI: 10.1002/adma.202313721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 03/30/2024] [Indexed: 04/28/2024]
Abstract
Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhongming Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yingbo He
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Quanhao Wang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Tangbiao Cao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zuxin Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Hua Xu
- School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
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12
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Wu JY, Jiang HY, Wen ZY, Wang CR, Zhang T. Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32357-32366. [PMID: 38877995 DOI: 10.1021/acsami.4c04023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.
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Affiliation(s)
- Jing-Yuan Wu
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Hai-Yang Jiang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Zhao-Yang Wen
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Chun-Rui Wang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, and School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Southeast University Suzhou Campus, Suzhou 215123, China
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13
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Abbas K, Ji P, Ullah N, Shafique S, Zhang Z, Ameer MF, Qin S, Yang S. Graphene photodetectors integrated with silicon and perovskite quantum dots. MICROSYSTEMS & NANOENGINEERING 2024; 10:81. [PMID: 38911343 PMCID: PMC11190230 DOI: 10.1038/s41378-024-00722-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 04/24/2024] [Accepted: 04/25/2024] [Indexed: 06/25/2024]
Abstract
Photodetectors (PDs) play a crucial role in imaging, sensing, communication systems, etc. Graphene (Gr), a leading two-dimensional material, has demonstrated significant potential for photodetection in recent years. However, its relatively weak interaction with light poses challenges for practical applications. The integration of silicon (Si) and perovskite quantum dots (PQDs) has opened new avenues for Gr in the realm of next-generation optoelectronics. This review provides a comprehensive investigation of Gr/Si Schottky junction PDs and Gr/PQD hybrid PDs as well as their heterostructures. The operating principles, design, fabrication, optimization strategies, and typical applications of these devices are studied and summarized. Through these discussions, we aim to illuminate the current challenges and offer insights into future directions in this rapidly evolving field.
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Affiliation(s)
- Kashif Abbas
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Peirui Ji
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Naveed Ullah
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Shareen Shafique
- Department of Microelectronic Science and Engineering, Laboratory of Clean Energy Storage and Conversion, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo, 315211 China
| | - Ze Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Muhammad Faizan Ameer
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Shenghan Qin
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Shuming Yang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
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14
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Li Y, Yu W, Zhang K, Cui N, Yun T, Xia X, Jiang Y, Zhang G, Mu H, Lin S. Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. MATERIALS HORIZONS 2024; 11:2572-2602. [PMID: 38482962 DOI: 10.1039/d3mh02250a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.
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Affiliation(s)
- Yun Li
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- MOE Key Laboratory of Laser Life Science &Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Tinghe Yun
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yan Jiang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
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15
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Su S, Zhao J, Ly TH. Scanning Probe Microscopies for Characterizations of 2D Materials. SMALL METHODS 2024:e2400211. [PMID: 38766949 DOI: 10.1002/smtd.202400211] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Revised: 04/12/2024] [Indexed: 05/22/2024]
Abstract
2D materials are intriguing due to their remarkably thin and flat structure. This unique configuration allows the majority of their constituent atoms to be accessible on the surface, facilitating easier electron tunneling while generating weak surface forces. To decipher the subtle signals inherent in these materials, the application of techniques that offer atomic resolution (horizontal) and sub-Angstrom (z-height vertical) sensitivity is crucial. Scanning probe microscopy (SPM) emerges as the quintessential tool in this regard, owing to its atomic-level spatial precision, ability to detect unitary charges, responsiveness to pico-newton-scale forces, and capability to discern pico-ampere currents. Furthermore, the versatility of SPM to operate under varying environmental conditions, such as different temperatures and in the presence of various gases or liquids, opens up the possibility of studying the stability and reactivity of 2D materials in situ. The characteristic flatness, surface accessibility, ultra-thinness, and weak signal strengths of 2D materials align perfectly with the capabilities of SPM technologies, enabling researchers to uncover the nuanced behaviors and properties of these advanced materials at the nanoscale and even the atomic scale.
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Affiliation(s)
- Shaoqiang Su
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
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16
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Liu B, Yue X, Sheng C, Chen J, Tang C, Shan Y, Han J, Shen S, Wu W, Li L, Lu Y, Hu L, Liu R, Qiu ZJ, Cong C. High-Performance Contact-Doped WSe 2 Transistors Using TaSe 2 Electrodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19247-19253. [PMID: 38591143 DOI: 10.1021/acsami.4c01605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.
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Affiliation(s)
- Bingjie Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Xiaofei Yue
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chenxu Sheng
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jiajun Chen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chengjie Tang
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Yabing Shan
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jinkun Han
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shuwen Shen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Wenxuan Wu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Lijia Li
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ye Lu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Laigui Hu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ran Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Zhi-Jun Qiu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chunxiao Cong
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, China
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17
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Sinha R. Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS 2) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:7114-7126. [PMID: 38501958 DOI: 10.1021/acs.langmuir.4c00251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
The domain related to the use of renewable energy is showing high interest among the researchers in the current days, and light energy can be considered as one of such. Solar cells are the kind of devices that use light energy in an efficient way to generate electricity. Hence, designing and developing a solar cell requires meticulous attention to get an optimum output. This work focuses on designing and optimization of aluminum dope ZnO/phenyl-C-butyric acid methyl ester/tungsten disulfide (AZO/PCBM/WS2) heterojunction-based device for applications in solar cells. Moreover, considering the high demand of optoelectronics like photodetectors, this work also uncovers the capabilities of the device in the applications of broadband self-powered photodetectors. The optimized values of several parameters of the device such as the thickness and doping density of the WS2 layer, the defect density of the WS2 layer, and the interface PCBM/WS2 were 2 μm, 1017 cm-3, 1014 cm-3, and 1010 cm-2, respectively. These optimal conditions facilitated in obtaining fill factor and efficiency values of 84.78 and 23.92%, respectively. Further, the photodetection performance was evaluated with the parameters like responsivity and detectivity. The maximum calculated responsivity of the device at 0 V bias was 0.63 A/W at 880 nm, whereas the maximum detectivity was 1.54 × 1013 Jones. This study also extensively focuses on the in-depth understanding of the physics associated with the movement of the charge carriers under the illuminated conditions by studying the band diagrams and the electric fields of the heterojunctions at various conditions.
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Affiliation(s)
- Rupam Sinha
- Department of Chemical Engineering, Chaitanya Bharathi Institute of Technology, Gandipet, Hyderabad, Telangana 500075, India
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18
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He W, Wu D, Kong L, Yu P, Yang G. Giant Negative Photoresponse in van der Waals Graphene/AgBiP 2Se 6/Graphene Trilayer Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312541. [PMID: 38252894 DOI: 10.1002/adma.202312541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 01/17/2024] [Indexed: 01/24/2024]
Abstract
The positive photoconductive (PPC) effect is a well-established primary detection mechanism employed by photodetectors. In contrast, the negative photoconductive (NPC) effect is not extensively investigated thus far, and research on the NPC effect is still in its early stage. Herein, a quaternary van der Waals material, AgBiP2Se6 atomic layers, is discovered to achieve a giant NPC effect. Through experimental observations in a Graphene/AgBiP2Se6/ Graphene-based vertical photodetector, an irreversible conversion is identified from common PPC photoresponse to atypical NPC photoresponse. Notably, this device demonstrates an exceptionally high negative responsivity (R) of 4.9 × 105 A W-1, surpassing the previous records for NPC photodetectors. Additionally, it exhibits remarkable optoelectronic performances, including an external quantum efficiency of 1.3 × 108% and a detectivity (D) of 3.60 × 1012 Jones. The exceptionally high NPC photoresponse observed in this device can be attributed to the swift suppression of photogenerated free carriers at robust recombination centers situated at significant depths, induced by the elevated drain-source voltage bias. The remarkably high NPC photoresponse also positions AgBiP2Se6 as a promising 2D material for multifunctional optoelectronic devices and an excellent platform for systematic exploration of the NPC effect.
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Affiliation(s)
- Wei He
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Dong Wu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Lingling Kong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
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19
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Radatović B, Çakıroğlu O, Jadriško V, Frisenda R, Senkić A, Vujičić N, Kralj M, Petrović M, Castellanos-Gomez A. Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:15596-15604. [PMID: 38500411 PMCID: PMC10982932 DOI: 10.1021/acsami.4c00458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 03/03/2024] [Accepted: 03/05/2024] [Indexed: 03/20/2024]
Abstract
In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.
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Affiliation(s)
- Borna Radatović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Onur Çakıroğlu
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Valentino Jadriško
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Physics
Department, Politecnico di Milano, 20133 Milan, Italy
| | | | - Ana Senkić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Nataša Vujičić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marko Kralj
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marin Petrović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Andres Castellanos-Gomez
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
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20
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Cheng Y, Guo X, Shi Y, Pan L. Recent advance of high-quality perovskite nanostructure and its application in flexible photodetectors. NANOTECHNOLOGY 2024; 35:242001. [PMID: 38467065 DOI: 10.1088/1361-6528/ad3251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Accepted: 03/11/2024] [Indexed: 03/13/2024]
Abstract
Flexible photodetectors (PDs) have garnered increasing attention for their potential applications in diverse fields, including weather monitoring, smart robotics, smart textiles, electronic eyes, wearable biomedical monitoring devices, and so on. Notably, perovskite nanostructures have emerged as a promising material for flexible PDs due to their distinctive features, such as a large optical absorption coefficient, tunable band gap, extended photoluminescence decay time, high carrier mobility, low defect density, long exciton diffusion lengths, strong self-trapped effect, good mechanical flexibility, and facile synthesis methods. In this review, we first introduce various synthesis methods for perovskite nanostructures and elucidate their corresponding optical and electrical properties, encompassing quantum dots, nanocrystals, nanowires, nanobelts, nanosheets, single-crystal thin films, polycrystalline thin films, and nanostructured arrays. Furthermore, the working mechanism and key performance parameters of optoelectronic devices are summarized. The review also systematically compiles recent advancements in flexible PDs based on various nanostructured perovskites. Finally, we present the current challenges and prospects for the development of perovskite nanostructures-based flexible PDs.
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Affiliation(s)
- Yan Cheng
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Xin Guo
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Yi Shi
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Lijia Pan
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
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21
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Si W, Zhou W, Liu X, Wang K, Liao Y, Yan F, Ji X. Recent Advances in Broadband Photodetectors from Infrared to Terahertz. MICROMACHINES 2024; 15:427. [PMID: 38675239 PMCID: PMC11051910 DOI: 10.3390/mi15040427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 04/28/2024]
Abstract
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.
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Affiliation(s)
- Wei Si
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Wenbin Zhou
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiangze Liu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Ke Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Yiming Liao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Feng Yan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoli Ji
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
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22
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Yu QJ, Li XX, Li YC, Ding ST, Huang T, Gu ZY, Ou LX, Lu HL. High-performance MoS 2phototransistors with Hf 1-xAl xO back-gate dielectric layer grown by plasma enhanced atomic layer deposition. NANOTECHNOLOGY 2024; 35:195204. [PMID: 38316045 DOI: 10.1088/1361-6528/ad263f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Accepted: 02/05/2024] [Indexed: 02/07/2024]
Abstract
Molybdenum sulfide (MoS2) as an emerging optoelectronic material, shows great potential for phototransistors owing to its atomic thickness, adjustable band gap, and low cost. However, the phototransistors based on MoS2have been shown to have some issues such as large gate leakage current, and interfacial scattering, resulting in suboptimal optoelectronic performance. Thus, Al-doped hafnium oxide (Hf1-xAlx) is proposed to be a dielectric layer of the MoS2-based phototransistor to solve this problem because of the relatively higher crystallization temperature and dielectric constant. Here, a high-performance MoS2phototransistor with Hf1-xAlxO gate dielectric layer grown by plasma-enhanced atomic layer deposition has been fabricated and studied. The results show that the phototransistor exhibits a high responsivity of 2.2 × 104A W-1, a large detectivity of 1.7 × 1017Jones, a great photo-to-dark current ratio of 2.2 × 106%, and a high external quantum efficiency of 4.4 × 106%. The energy band alignment and operating mechanism were further used to clarify the reason for the enhanced MoS2phototransistor. The suggested MoS2phototransistors could provide promising strategies in further optoelectronic applications.
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Affiliation(s)
- Qiu-Jun Yu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xiao-Xi Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Emerging Device and Chip Laboratory, Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, People's Republic of China
| | - Yu-Chun Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Si-Tong Ding
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Teng Huang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Ze-Yu Gu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Lang-Xi Ou
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Jiashan Fudan Institute, Jiaxing, Zhejiang Province 314100, People's Republic of China
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23
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Syong WR, Fu JH, Kuo YH, Chu YC, Hakami M, Peng TY, Lynch J, Jariwala D, Tung V, Lu YJ. Enhanced Photogating Gain in Scalable MoS 2 Plasmonic Photodetectors via Resonant Plasmonic Metasurfaces. ACS NANO 2024. [PMID: 38315422 DOI: 10.1021/acsnano.3c10390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Absorption of photons in atomically thin materials has become a challenge in the realization of ultrathin, high-performance optoelectronics. While numerous schemes have been used to enhance absorption in 2D semiconductors, such enhanced device performance in scalable monolayer photodetectors remains unattained. Here, we demonstrate wafer-scale integration of monolayer single-crystal MoS2 photodetectors with a nitride-based resonant plasmonic metasurface to achieve a high detectivity of 2.58 × 1012 Jones with a record-low dark current of 8 pA and long-term stability over 40 days. Upon comparison with control devices, we observe an overall enhancement factor of >100; this can be attributed to the local strong EM field enhanced photogating effect by the resonant plasmonic metasurface. Considering the compatibility of 2D semiconductors and hafnium nitride with the Si CMOS process and their scalability across wafer sizes, our results facilitate the smooth incorporation of 2D semiconductor-based photodetectors into the fields of imaging, sensing, and optical communication applications.
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Affiliation(s)
- Wei-Ren Syong
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Jui-Han Fu
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yu-Hsin Kuo
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Yu-Cheng Chu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Mariam Hakami
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Tzu-Yu Peng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Jason Lynch
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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24
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Du Y, Yin S, Li Y, Chen J, Shi D, Guo E, Zhang H, Wang Z, Qin Q, Zou C, Zhai T, Li L. Liquid-Metal-Assisted Synthesis of Patterned GaN Thin Films for High-Performance UV Photodetectors Array. SMALL METHODS 2024; 8:e2300175. [PMID: 37317014 DOI: 10.1002/smtd.202300175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Revised: 05/31/2023] [Indexed: 06/16/2023]
Abstract
GaN's outstanding physical characteristics allow for a wide range of applications in numerous industries. Although individual GaN-based ultraviolet (UV) photodetectors are the subject of in-depth research in recent decades, the demand for photodetectors array is rising as a result of advances in optoelectronic integration technology. However, as a prerequisite for constructing GaN-based photodetectors array, large-area, patterned synthesis of GaN thin films remains a certain challenge. This work presents a facile technique for pattern growing high-quality GaN thin films for the assembly of an array of high-performance UV photodetectors. This technique uses UV lithography, which is not only very compatible with common semiconductor manufacturing techniques, but also enables precise patterning modification. A typical detector has impressive photo-response performance under 365 nm irradiation, with an extremely low dark current of 40 pA, a high Ilight /Idark ratio over 105 , a high responsivity of 4.23 AW-1 , and a decent specific detectivity of 1.76 × 1012 Jones. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable UV image sensor with enough spatial resolution. These outcomes highlight the proposed patterning technique's enormous potential.
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Affiliation(s)
- Yuchen Du
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Ying Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Dongfeng Shi
- Key Laboratory of Atmospheric Optics, Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Advanced Laser Technology Laboratory of Anhui Province, Hefei, 230037, P. R. China
| | - Erjuan Guo
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Hui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Zihan Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Qinggang Qin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, 230029, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
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25
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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26
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Ahmed A, Zahir Iqbal M, Dahshan A, Aftab S, Hegazy HH, Yousef ES. Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review. NANOSCALE 2024; 16:2097-2120. [PMID: 38204422 DOI: 10.1039/d3nr04994a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.
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Affiliation(s)
- Anique Ahmed
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23640, Khyber Pakhtunkhwa, Pakistan.
| | - Muhammad Zahir Iqbal
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23640, Khyber Pakhtunkhwa, Pakistan.
| | - Alaa Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - El Sayed Yousef
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
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27
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Liu M, Wei J, Qi L, An J, Liu X, Li Y, Shi Z, Li D, Novoselov KS, Qiu CW, Li S. Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe 2/Ta 2NiSe 5 photodetectors. Nat Commun 2024; 15:141. [PMID: 38167874 PMCID: PMC10762006 DOI: 10.1038/s41467-023-44482-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Photogating effect is the dominant mechanism of most high-responsivity two-dimensional (2D) material photodetectors. However, the ultrahigh responsivities in those devices are intrinsically at the cost of very slow response speed. In this work, we report a WSe2/Ta2NiSe5 heterostructure detector whose photodetection gain and response speed can be enhanced simultaneously, overcoming the trade-off between responsivity and speed. We reveal that photogating-assisted tunneling synergistically allows photocarrier multiplication and carrier acceleration through tunneling under an electrical field. The photogating effect in our device features low-power consumption (in the order of nW) and shows a dependence on the polarization states of incident light, which can be further tuned by source-drain voltages, allowing for wavelength discrimination with just a two-electrode planar structure. Our findings offer more opportunities for the long-sought next-generation photodetectors with high responsivity, fast speed, polarization detection, and multi-color sensing, simultaneously.
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Affiliation(s)
- Mingxiu Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 611731, Chengdu, PR China
| | - Liujian Qi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Junru An
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Xingsi Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Yahui Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China.
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China.
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
| | - Shaojuan Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China.
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China.
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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29
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Feng X, Cheng R, Yin L, Wen Y, Jiang J, He J. Two-Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304708. [PMID: 37452605 DOI: 10.1002/adma.202304708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Revised: 07/06/2023] [Accepted: 07/12/2023] [Indexed: 07/18/2023]
Abstract
Atomically thin two-dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new-generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, the various types of 2D oxide crystals are first summarized, including both layered and nonlayered crystals, as well as their current top-down and bottom-up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, recent advances in device applications are emphasized, including photodetectors, field-effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. It is hoped that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications.
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Affiliation(s)
- Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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30
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Liu F, Lin X, Yan Y, Gan X, Cheng Y, Luo X. Self-Powered Programmable van der Waals Photodetectors with Nonvolatile Semifloating Gate. NANO LETTERS 2023; 23:11645-11654. [PMID: 38088857 DOI: 10.1021/acs.nanolett.3c03500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hexagonal boron nitride/graphene semifloating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (∼3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ∼0.5 A/W and detectivity ∼1.6 × 1012 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semifloating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.
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Affiliation(s)
- Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Xi Lin
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Yuting Yan
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Yingchun Cheng
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Xiaoguang Luo
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
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31
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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Gutiérrez Y, Dicorato S, Dilonardo E, Palumbo F, Giangregorio MM, Losurdo M. Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation. ACS APPLIED NANO MATERIALS 2023; 6:20161-20172. [PMID: 37969785 PMCID: PMC10644295 DOI: 10.1021/acsanm.3c03899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Revised: 10/06/2023] [Accepted: 10/06/2023] [Indexed: 11/17/2023]
Abstract
The gallium monochalcogenides family, comprising gallium sulfide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), is capturing attention for its applications in energy storage and production, catalysis, photonics, and optoelectronics. This interest originates from their properties, which include an optical bandgap larger than those of most common transition metal dichalcogenides, efficient light absorption, and significant carrier mobility. For any application, stability to air exposure is a fundamental requirement. Here, we perform a comparative study of the stability of layered GaS, GaSe, and GaTe nanometer-thick films down to a few layers with the goal of identifying the most suitable Ga chalcogenide for future integration in photonic and optoelectronic devices. Our study unveils a trend of decreasing air stability from sulfide to selenide and finally to telluride. Furthermore, we demonstrate a hydrogen passivation process to prevent the oxidation of GaSe with a higher feasibility and durability than other state-of-the-art passivation methods proposed in the literature.
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Affiliation(s)
- Yael Gutiérrez
- Istituto
di Chimica della Materia Condensata e delle Tecnologie per l’Energia,
ICMATE, CNR, C.so Stati
Uniti 4, 35127 Padova, Italy
- Physics
Department, University of Oviedo, 33007 Oviedo, Spain
| | - Stefano Dicorato
- Institute
of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy
| | - Elena Dilonardo
- Institute
of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy
| | - Fabio Palumbo
- Institute
of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy
| | | | - Maria Losurdo
- Istituto
di Chimica della Materia Condensata e delle Tecnologie per l’Energia,
ICMATE, CNR, C.so Stati
Uniti 4, 35127 Padova, Italy
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33
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Zhang C, Ning J, Wang D, Zhang J, Hao Y. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors. NANOTECHNOLOGY 2023; 35:042001. [PMID: 37524059 DOI: 10.1088/1361-6528/acebf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
With advancements in information technology, an enormous amount of data is being generated that must be quickly accessible. However, conventional Si memory cells are approaching their physical limits and will be unable to meet the requirements of intense applications in the future. Notably, 2D atomically thin materials have demonstrated multiple novel physical and chemical properties that can be used to investigate next-generation electronic devices and breakthrough physical limits to continue Moore's law. Band structure is an important semiconductor parameter that determines their electrical and optical properties. In particular, 2D materials have highly tunable bandgaps and Fermi levels that can be achieved through band structure engineering methods such as heterostructure, substrate engineering, chemical doping, intercalation, and electrostatic doping. In particular, dynamic control of band structure engineering can be used in recent advancements in 2D devices to realize nonvolatile storage performance. This study examines recent advancements in 2D memory devices that utilize band structure engineering. The operational mechanisms and memory characteristics are described for each band structure engineering method. Band structure engineering provides a platform for developing new structures and realizing superior performance with respect to nonvolatile memory.
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Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
- Xidian-Wuhu Research Institute, Wuhu 241000, People's Republic of China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
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Wang S, Bai Y, Liu M, Zong X, Wang W, Mu Q, Han T, Li F, Wang S, Shan L, Long M. A high-performance long-wave infrared photodetector based on a WSe 2/PdSe 2 broken-gap heterodiode. NANOSCALE 2023; 15:17006-17013. [PMID: 37831435 DOI: 10.1039/d3nr03248e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Layered narrow bandgap quasi-two-dimensional (2D) transition metal dichalcogenides (TMDs) demonstrated excellent performance in long-wave infrared (LWIR) detection. However, the low light on/off ratio and specific detectivity (D*) due to the high dark current of the device fabricated using a single narrow bandgap material hindered its wide application. Herein, we report a type-III broken-gap band-alignment WSe2/PdSe2 van der Waals (vdW) heterostructure. The heterodiode device has a prominently low dark current and exhibits a high photoresponsivity (R) of 55.3 A W-1 and a high light on/off ratio >105 in the visible range. Notably, the WSe2/PdSe2 heterodiode shows an excellent uncooled LWIR response, with an R of ∼0.3 A W-1, a low noise equivalence power (NEP) of 4.5 × 10-11 W Hz-1/2, and a high D* of 1.8 × 108 cm Hz1/2 W-1. This work provides a new approach for designing high-performance room-temperature operational LWIR photodetectors.
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Affiliation(s)
- Suofu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Yajie Bai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Mingli Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Xiaolan Zong
- Institute for Quantum Control and Quantum Information, School of Physics and Materials Engineering, Hefei Normal University, Hefei 230601, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Qingge Mu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Shaoliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
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35
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Long PX, Lai YY, Kang PH, Chuang CH, Cheng YJ. High photoresponsivity MoS 2phototransistor through enhanced hole trapping HfO 2gate dielectric. NANOTECHNOLOGY 2023; 35:025204. [PMID: 37816338 DOI: 10.1088/1361-6528/ad01c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Accepted: 10/09/2023] [Indexed: 10/12/2023]
Abstract
Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2phototransistor. When HfO2is annealed in H2atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2interface through H2annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107A W-1and photogain of 3.3 × 107under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection.
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Affiliation(s)
- Pei-Xuan Long
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yung-Yu Lai
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Pei-Hao Kang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Chi-Huang Chuang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Yuh-Jen Cheng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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36
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Zhang Z, Wan C, Li H, Liu C, Meng L, Yan X. Effect of external electric field on the electronic properties of the AlAs/SiC van der Waals heterostructure. Phys Chem Chem Phys 2023; 25:27766-27773. [PMID: 37814790 DOI: 10.1039/d3cp03031h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/11/2023]
Abstract
Type-II van der Waals (vdW) heterostructures are regarded as the optimum candidates for unipolar electronic device applications due to their capacity for spontaneous electron-hole separation. Here, we studied the electronic properties of the AlAs/SiC vdW heterostructure via density functional theory calculations. Results show that the conduction band minimum (CBM) and valence band maximum (VBM) of this heterostructure are mainly contributed by different materials, illustrating that the AlAs/SiC heterostructure has a type-II band alignment. Interestingly, this heterostructure possesses flat valence bands near the Fermi level. In addition, under the modulation of external electric field ranging between -1 V Å-1∼0.8 V Å-1, the band gap of the heterostructure can be tuned continuously, while the band structure maintains a stable type-II band alignment with flat top valence bands. When the electric field exceeds -1 or 0.8 V Å-1, the heterostructure transitions from semiconductor material to metal, indicating the tunability of electronic properties under external fields. These results indicate that the AlAs/SiC heterostructure shows great potential for application in high-performance optoelectronic devices and a strong correlation may exist in this system.
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Affiliation(s)
- Zicheng Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Changxin Wan
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Heng Li
- Jiujiang Resarch Institute of Xiamen University, Jiujiang, 332000, China
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China
| | - Chunsheng Liu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Lan Meng
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Xiaohong Yan
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
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Basyooni-M. Kabatas MA, En-nadir R, Rahmani K, Eker YR. Positive and Negative Photoconductivity in Ir Nanofilm-Coated MoO 3 Bias-Switching Photodetector. MICROMACHINES 2023; 14:1860. [PMID: 37893298 PMCID: PMC10609430 DOI: 10.3390/mi14101860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2023] [Revised: 09/24/2023] [Accepted: 09/27/2023] [Indexed: 10/29/2023]
Abstract
In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO3 wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 × 1019 cm-3 with 0.19 nm roughness. Using the Kubelka-Munk model, we found that the bandgap decreased with increasing Ir thickness, consistent with Urbach tail energy suggesting a lower level of disorder. Regarding transient photocurrent behavior, all samples exhibited high stability under both dark and UV conditions. We also observed a positive photoconductivity at bias voltages of >0.5 V, while at 0 V bias voltage, the samples displayed a negative photoconductivity behavior. This unique aspect allowed us to explore self-powered negative photodetectors, showcasing fast response and recovery times of 0.36/0.42 s at 0 V. The intriguing negative photoresponse that we observed is linked to hole self-trapping/charge exciton and Joule heating effects.
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Affiliation(s)
- Mohamed A. Basyooni-M. Kabatas
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Türkiye
| | - Redouane En-nadir
- Laboratory of Solid-State Physics, Faculty of Sciences Dhar el Mahraz, University Sidi Mohammed Ben Abdellah, P.O. Box 1796, Atlas Fez 30 000, Morocco;
| | - Khalid Rahmani
- Department of Physics, Ecole Normale Supérieure (ENS), Mohammed V University, P.O. Box 8007, Rabat, Morocco;
| | - Yasin Ramazan Eker
- Department of Basic Sciences, Faculty of Engineering, Necmettin Erbakan University, Konya 42090, Türkiye
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Türkiye
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38
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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Lu C, Dai Q, Tang C, Wang X, Xu S, Sun L, Peng Y, Lv W. Towards high photoresponse of perovskite nanowire/copper phthalocyanine heterostructured photodetector. NANOTECHNOLOGY 2023; 34:495201. [PMID: 37647872 DOI: 10.1088/1361-6528/acf502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Accepted: 08/29/2023] [Indexed: 09/01/2023]
Abstract
One-dimensional nanowire structures composed of perovskite are widely recognized for their exceptional optoelectronic performance and mechanical properties, making them a popular area of investigation in photodetection research. In this work, a perovskite nanowire/copper phthalocyanine heterojunction-based photodetector was fabricated, which exhibits high photoresponse in the visible-near-infrared region. The incorporation of a heterojunction significantly enhanced the photoelectric performance. Specifically, the photoresponsivity and external quantum efficiency of the nanowire-based device were elevated from 58.5 A W-1and 1.35 × 104% to 84.5 A W-1and 1.97 × 104% at 532 nm, respectively. The enhanced photoresponse of the heterojunction device can be attributed to the unique microstructure of nanowire arrays. The wrapping of the nanowires by copper phthalocyanine forms heterojunctions with a larger dissociation area, which facilitated exciton dissociation and enhanced device performance. This work provides a promising example for optimizing the performance of nanowire devices.
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Affiliation(s)
- Chengyu Lu
- Institute of Microelectronics, College of Optical and Electronic Technology, China Jiliang University, Hangzhou, People's Republic of China
| | - Qinyong Dai
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People's Republic of China
| | - Chenyu Tang
- Institute of Microelectronics, College of Optical and Electronic Technology, China Jiliang University, Hangzhou, People's Republic of China
| | - Xinyu Wang
- Institute of Microelectronics, College of Optical and Electronic Technology, China Jiliang University, Hangzhou, People's Republic of China
| | - Sunan Xu
- Institute of Microelectronics, College of Optical and Electronic Technology, China Jiliang University, Hangzhou, People's Republic of China
| | - Lei Sun
- Institute of Microelectronics, College of Optical and Electronic Technology, China Jiliang University, Hangzhou, People's Republic of China
| | - Yingquan Peng
- Institute of Microelectronics, College of Optical and Electronic Technology, China Jiliang University, Hangzhou, People's Republic of China
- Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou, People's Republic of China
| | - Wenli Lv
- Institute of Microelectronics, College of Optical and Electronic Technology, China Jiliang University, Hangzhou, People's Republic of China
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Verbakel JD, Dekker A, Zandvliet HJW, Bampoulis P. Photoconductivity Enhancement in Atomically Thin Molybdenum Disulfide through Local Doping from Confined Water. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:17171-17178. [PMID: 37670793 PMCID: PMC10476179 DOI: 10.1021/acs.jpcc.3c03442] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2023] [Revised: 07/14/2023] [Indexed: 09/07/2023]
Abstract
Two-dimensional transition metal dichalcogenide (TMDC) materials have shown great potential for usage in opto-electronic devices, especially down to the regime of a few layers to a single layer. However, at these limits, the material properties can be strongly influenced by the interfaces. By using photoconductive atomic force microscopy, we show a local enhancement of photoconductivity at the nanoscale in bilayer molybdenum disulfide on mica, where water is confined between the TMDC and the substrate. We have found that the structural phase of the water influences the doping level and thus the tunneling barrier at the nanojunction. This leads to an increase in photocurrent and enhanced photopower generation.
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Affiliation(s)
| | | | - Harold J. W. Zandvliet
- Physics of Interfaces and Nanomaterials,
MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
| | - Pantelis Bampoulis
- Physics of Interfaces and Nanomaterials,
MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
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41
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Ghosh S, Zhang J, Wasala M, Patil P, Pradhan N, Talapatra S. Probing the Electronic and Opto-Electronic Properties of Multilayer MoS 2 Field-Effect Transistors at Low Temperatures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2333. [PMID: 37630917 PMCID: PMC10459643 DOI: 10.3390/nano13162333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 07/18/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023]
Abstract
Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS2 FETs, synthesized using the mechanical exfoliation of bulk MoS2 crystal, on the Si/SiO2 substrate. Our MoS2 FET show a room-temperature field-effect mobility μFE ~40 cm2·V-1·s-1, which increases with decreasing temperature, stabilizing at 80 cm2·V-1·s-1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, Peff (0.02 μW < Peff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW-1, and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.
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Affiliation(s)
- Sujoy Ghosh
- School of Physics and Applied Physics, Southern Illinois University, Carbondale, IL 62901, USA; (S.G.); (M.W.); (P.P.)
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
| | - Jie Zhang
- School of Physics and Applied Physics, Southern Illinois University, Carbondale, IL 62901, USA; (S.G.); (M.W.); (P.P.)
| | - Milinda Wasala
- School of Physics and Applied Physics, Southern Illinois University, Carbondale, IL 62901, USA; (S.G.); (M.W.); (P.P.)
| | - Prasanna Patil
- School of Physics and Applied Physics, Southern Illinois University, Carbondale, IL 62901, USA; (S.G.); (M.W.); (P.P.)
| | - Nihar Pradhan
- Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA;
| | - Saikat Talapatra
- School of Physics and Applied Physics, Southern Illinois University, Carbondale, IL 62901, USA; (S.G.); (M.W.); (P.P.)
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42
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Wang Y, Jin M, Gu M, Zhao X, Xie J, Meng G, Cheng Y, He J, Zhang J. Synthesis of violet phosphorus with large lateral sizes to facilitate nano-device fabrications. NANOSCALE 2023; 15:12406-12412. [PMID: 37458483 DOI: 10.1039/d3nr01113e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
Violet phosphorus has been proven to be the most stable phosphorus allotrope and has attracted much attention recently. The growth of violet phosphorus with large lateral sizes is crucial to obtain good quality violet phosphorene for nanodevice fabrication. Herein, a large number of violet phosphorus plates have been produced from molten lead using an optimized method to achieve red bronze luster. The crystal structure of the as-produced violet phosphorus was determined by single-crystal X-ray diffraction to be monoclinic with the space group P2/n (13) (CSD-2160375), identical to the one from the chemical vapor transport method (CSD-1935087). The as-produced violet phosphorus plates were found to have lateral sizes of 1.30 ± 0.41 mm2. The violet phosphorus plates were easily exfoliated and directly transferred to silicon substrates to facilitate building of a back-gate field-effect transistor. A hole mobility of 2.308 cm2 V-1 s-1 was obtained from a violet phosphorus nanosheet with a thickness of 52 nm under ambient conditions. The absolute responsivity of 130 mA W-1 with a fast response time of 27 ms was also obtained under the irradiation of a 530 nm laser.
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Affiliation(s)
- Yanhao Wang
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Mengting Jin
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Mengyue Gu
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Xuewen Zhao
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Jinan Xie
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Jinjiang He
- National Engineering Research Center of Key Materials of Integrated Circuit, Beijing 100088, China.
| | - Jinying Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
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43
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Huang Z, Luo Z, Deng Z, Yang M, Gao W, Yao J, Zhao Y, Dong H, Zheng Z, Li J. Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices. SMALL METHODS 2023; 7:e2201571. [PMID: 36932942 DOI: 10.1002/smtd.202201571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2022] [Revised: 02/20/2023] [Indexed: 06/09/2023]
Abstract
With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi2 Se3 as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe2 channel realizes a high responsivity of 20.5 A W-1 , an excellent detectivity of 2.18 × 1012 Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe2 device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS2 and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.
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Affiliation(s)
- Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Ziwen Deng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Huafeng Dong
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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Talib M, Tripathi N, Manzoor S, Sharma P, Pavelyev V, Volkov VS, Arsenin AV, Novikov SM, Mishra P. TiS 3 Nanoribbons: A Novel Material for Ultra-Sensitive Photodetection across Extreme Temperature Ranges. SENSORS (BASEL, SWITZERLAND) 2023; 23:4948. [PMID: 37430866 DOI: 10.3390/s23104948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Revised: 05/15/2023] [Accepted: 05/16/2023] [Indexed: 07/12/2023]
Abstract
Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K-543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10-5 A), photoresponsivity (1.624 × 108 A/W), quantum efficiency (3.3 × 108 A/W·nm), and detectivity (4.328 × 1015 Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10-5 W/cm2). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS3 nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV-Visible-NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.
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Affiliation(s)
- Mohammad Talib
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025, India
| | - Nishant Tripathi
- Samara National Research University, 34, Moskovskoye Shosse, Samara 443086, Russia
| | - Samrah Manzoor
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025, India
| | - Prachi Sharma
- Samara National Research University, 34, Moskovskoye Shosse, Samara 443086, Russia
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Vellore 632014, India
| | - Vladimir Pavelyev
- Samara National Research University, 34, Moskovskoye Shosse, Samara 443086, Russia
- IPSI RAS-Branch of the FSRC "Crystallography and Photonics" RAS, Molodogvardeyskaya 151, Samara 443001, Russia
| | - Valentyn S Volkov
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny 141700, Russia
| | - Aleksey V Arsenin
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny 141700, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
| | - Sergey M Novikov
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny 141700, Russia
| | - Prabhash Mishra
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025, India
- Samara National Research University, 34, Moskovskoye Shosse, Samara 443086, Russia
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Huang CH, Weng CY, Chen KH, Chou Y, Wu TL, Chou YC. Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37202222 DOI: 10.1021/acsami.3c03002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
In this work, the ultrathin two-dimensional (2D) indium oxide (InOx) with a large area of more than 100 μm2 and a high degree of uniformity was automatically peeled off from indium by the liquid-metal printing technique. Raman and optical measurements revealed that 2D-InOx has a polycrystalline cubic structure. By altering the printing temperature which affects the crystallinity of 2D-InOx, the mechanism of the existence and disappearance of memristive characteristics was established. The tunable characteristics of the 2D-InOx memristor with reproducible one-order switching was manifest from the electrical measurements. Further adjustable multistate characteristics of the 2D-InOx memristor and its resistance switching mechanism were evaluated. A detailed examination of the memristive process demonstrated the Ca2+ mimic dynamic in 2D-InOx memristors as well as the fundamental principles underlying biological and artificial synapses. These surveys allow us to comprehend a 2D-InOx memristor using the liquid-metal printing technique and could be applied to future neuromorphic applications and in the field of revolutionary 2D material exploration.
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Affiliation(s)
- Chang-Hsun Huang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chen-Yuan Weng
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Kuan-Hung Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yi Chou
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Tian-Li Wu
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yi-Chia Chou
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
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46
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Song I, Ahn J, Ahn H, Lee SH, Mei J, Kotov NA, Oh JH. Helical polymers for dissymmetric circularly polarized light imaging. Nature 2023; 617:92-99. [PMID: 37138111 DOI: 10.1038/s41586-023-05877-0] [Citation(s) in RCA: 29] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 02/22/2023] [Indexed: 05/05/2023]
Abstract
Control of the spin angular momentum (SAM) carried in a photon provides a technologically attractive element for next-generation quantum networks and spintronics1-5. However, the weak optical activity and inhomogeneity of thin films from chiral molecular crystals result in high noise and uncertainty in SAM detection. Brittleness of thin molecular crystals represents a further problem for device integration and practical realization of chiroptical quantum devices6-10. Despite considerable successes with highly dissymmetric optical materials based on chiral nanostructures11-13, the problem of integration of nanochiral materials with optical device platforms remains acute14-16. Here we report a simple yet powerful method to fabricate chiroptical flexible layers via supramolecular helical ordering of conjugated polymer chains. Their multiscale chirality and optical activity can be varied across the broad spectral range by chiral templating with volatile enantiomers. After template removal, chromophores remain stacked in one-dimensional helical nanofibrils producing a homogeneous chiroptical layer with drastically enhanced polarization-dependent absorbance, leading to well-resolved detection and visualization of SAM. This study provides a direct path to scalable realization of on-chip detection of the spin degree of freedom of photons necessary for encoded quantum information processing and high-resolution polarization imaging.
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Affiliation(s)
- Inho Song
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Department of Chemistry, Purdue University, West Lafayette, IN, USA
| | - Jaeyong Ahn
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Sang Hyuk Lee
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
| | - Jianguo Mei
- Department of Chemistry, Purdue University, West Lafayette, IN, USA
| | - Nicholas A Kotov
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
- Department of Chemical Engineering, Biointerface Institute, University of Michigan, Ann Arbor, MI, USA.
| | - Joon Hak Oh
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea.
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Xiao P, Zhang S, Zhang L, Yang J, Shi C, Han L, Tang W, Zhu B. Visible Near-Infrared Photodetection Based on Ta 2NiSe 5/WSe 2 van der Waals Heterostructures. SENSORS (BASEL, SWITZERLAND) 2023; 23:s23094385. [PMID: 37177590 PMCID: PMC10181779 DOI: 10.3390/s23094385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 04/14/2023] [Accepted: 04/15/2023] [Indexed: 05/15/2023]
Abstract
The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta2NiSe5/WSe2, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (~3.6 pA), with rise and fall times of 278 μs and 283 μs for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection.
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Affiliation(s)
- Pan Xiao
- College of Science, Zhejiang University of Technology, 288 Liu-He Road, Hangzhou 310023, China
| | - Shi Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
| | - Libo Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
| | - Jialiang Yang
- College of Science, Zhejiang University of Technology, 288 Liu-He Road, Hangzhou 310023, China
| | - Chaofan Shi
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
| | - Li Han
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
| | - Weiwei Tang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
| | - Bairen Zhu
- College of Science, Zhejiang University of Technology, 288 Liu-He Road, Hangzhou 310023, China
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48
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Meng X, Du Y, Wu W, Joseph NB, Deng X, Wang J, Ma J, Shi Z, Liu B, Ma Y, Yue F, Zhong N, Xiang PH, Zhang C, Duan CG, Narayan A, Sun Z, Chu J, Yuan X. Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta 2 NiS 5 Photodetector. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300413. [PMID: 37116118 PMCID: PMC10369293 DOI: 10.1002/advs.202300413] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power-dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. This work reports the giant superlinear power dependence of photocurrent based on multilayer Ta2 NiS5 . While the fabricated photodetector exhibits good sensitivity (3.1 mS W-1 per □) and fast photoresponse (31 µs), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from 1.5 to 200 µW µm-2 , the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, prominent superlinearity is observed with a giant power exponent of γ = 1.5. The unusual photoresponse can be explained by a two-recombination-center model where density of states of the recombination centers (RC) effectively closes all recombination channels. The photodetector is integrated into camera for taking photos with enhanced contrast due to superlinearity. This work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.
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Affiliation(s)
- Xianghao Meng
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yuhan Du
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Wenbin Wu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Nesta Benno Joseph
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, 560012, India
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Jinjin Wang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Jianwen Ma
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Zeping Shi
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Binglin Liu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yuanji Ma
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Ni Zhong
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Ping-Hua Xiang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Chun-Gang Duan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, 560012, India
| | - Zhenrong Sun
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200438, China
| | - Xiang Yuan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
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49
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Wang F, Zhang T, Xie R, Wang Z, Hu W. How to characterize figures of merit of two-dimensional photodetectors. Nat Commun 2023; 14:2224. [PMID: 37076481 PMCID: PMC10115793 DOI: 10.1038/s41467-023-37635-1] [Citation(s) in RCA: 35] [Impact Index Per Article: 35.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Accepted: 03/24/2023] [Indexed: 04/21/2023] Open
Abstract
Photodetectors based on two-dimensional (2D) materials have been the focus of intensive research and development over the past decade. However, a gap has long persisted between fundamental research and mature applications. One of the main reasons behind this gap has been the lack of a practical and unified approach for the characterization of their figures of merit, which should be compatible with the traditional performance evaluation system of photodetectors. This is essential to determine the degree of compatibility of laboratory prototypes with industrial technologies. Here we propose general guidelines for the characterization of the figures of merit of 2D photodetectors and analyze common situations when the specific detectivity, responsivity, dark current, and speed can be misestimated. Our guidelines should help improve the standardization and industrial compatibility of 2D photodetectors.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China.
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50
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Ye X, Du Y, Wang M, Liu B, Liu J, Jafri SHM, Liu W, Papadakis R, Zheng X, Li H. Advances in the Field of Two-Dimensional Crystal-Based Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1379. [PMID: 37110964 PMCID: PMC10146229 DOI: 10.3390/nano13081379] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 03/27/2023] [Accepted: 04/14/2023] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) materials have sparked intense interest among the scientific community owing to their extraordinary mechanical, optical, electronic, and thermal properties. In particular, the outstanding electronic and optical properties of 2D materials make them show great application potential in high-performance photodetectors (PDs), which can be applied in many fields such as high-frequency communication, novel biomedical imaging, national security, and so on. Here, the recent research progress of PDs based on 2D materials including graphene, transition metal carbides, transition-metal dichalcogenides, black phosphorus, and hexagonal boron nitride is comprehensively and systematically reviewed. First, the primary detection mechanism of 2D material-based PDs is introduced. Second, the structure and optical properties of 2D materials, as well as their applications in PDs, are heavily discussed. Finally, the opportunities and challenges of 2D material-based PDs are summarized and prospected. This review will provide a reference for the further application of 2D crystal-based PDs.
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Affiliation(s)
- Xiaoling Ye
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Yining Du
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Mingyang Wang
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Benqing Liu
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Jiangwei Liu
- School of Energy and Power Engineering, Shandong University, Jinan 250061, China;
| | - Syed Hassan Mujtaba Jafri
- Department of Electrical Engineering, Mirpur University of Science and Technology (MUST), Mirpur Azad Jammu and Kashmir 10250, Pakistan;
| | - Wencheng Liu
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Raffaello Papadakis
- Department of Chemistry, Uppsala University, 75120 Uppsala, Sweden;
- TdB Labs AB, Uppsala Business Park, 75450 Uppsala, Sweden
| | - Xiaoxiao Zheng
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Hu Li
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
- Department of Materials Science and Engineering, Uppsala University, 75121 Uppsala, Sweden
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