An overview on emerging photoelectrochemical self-powered ultraviolet photodetectors

The Influence of Electrolytes on the Performance of Self-Powered Photoelectrochemical Photodetector Based on α-Ga2O3 Nanorods

Photodetectors have a wide range of applications across various fields. Self-powered photodetectors that do not require external energy have garnered significant attention. The photoelectrochemical type of photodetector is a self-powered device that is both simple to fabricate and offers high performance. However, developing photoelectrochemical photodetectors with superior quality and performance remains a significant challenge. The electrolyte, which is a key component in these detectors, must maintain extensive contact with the semiconductor without degrading its material quality and efficiently catalyze the redox reactions of photogenerated electrons and holes, while also facilitating rapid charge carrier transport. In this study, α-Ga2O3 nanorod arrays were synthesized via a cost-effective hydrothermal method to achieve a self-powered solar-blind photodetector. The impacts of different electrolytes-Na2SO4, NaOH, and Na2CO3-on the photodetector was investigated. Ultimately, a self-powered photodetector with Na2SO4 as the electrolyte demonstrated a stable photoresponse, with the maximum responsivity of 0.2 mA/W at 262 nm with the light intensity of 3.0 mW/cm2, and it exhibited rise and decay times of 0.16 s and 0.10 s, respectively. The α-Ga2O3 nanorod arrays and Na2SO4 electrolyte provided a rapid pathway for the transport of photogenerated carriers and the built-in electric field at the semiconductor-liquid heterojunction interface, which was largely responsible for the effective separation of photogenerated electron-hole pairs that provided the outstanding performance of our photodetector.

Review on synthetic approaches and PEC activity performance of bismuth binary and mixed-anion compounds for potential applications in marine engineering

Photoelectrochemical (PEC) technology in marine engineering holds significant importance due to its potential to address various challenges in the marine environment. Currently, PEC-type applications in marine engineering offer numerous benefits, including sustainable energy generation, water desalination and treatment, photodetection, and communication. Finding novel efficient photoresponse semiconductors is of great significance for the development of PEC-type techniques in the marine space. Bismuth-based semiconductor materials possess suitable and tunable bandgap structures, high carrier mobility, low toxicity, and strong oxidation capacity, which gives them great potential for PEC-type applications in marine engineering. In this paper, the structure and properties of bismuth binary and mixed-anion semiconductors have been reviewed. Meanwhile, the recent progress and synthetic approaches were discussed from the point of view of the application prospects. Finally, the issues and challenges of bismuth binary and mixed-anion semiconductors in PEC-type photodetection and hydrogen generation are analyzed. Thus, this perspective will not only stimulate the further investigation and application of bismuth binary and mixed-anion semiconductors in marine engineering but also help related practitioners understand the recent progress and potential applications of bismuth binary and mixed-anion compounds.

Ag-modified enhance the performances of ZnO@CFs based omnidirectional photoelectrochemical ultraviolet detectors

There are several prospective applications for omnidirectional ultraviolet (UV) detectors and underwater detection detectors in optical systems and optical fields. In this work, ZnO nanorods arrays were grown on carbon fibers (CFs). An appropriate amount of Ag nanoparticles (NPs) was deposited on the surface of ZnO nanorods by photochemical deposition. This improved the performance of photoelectrochemical (PEC) based UV detectors. Under 365 nm and 10 mW cm-2UV irradiation, the photocurrent density of the 30s-Ag/ZnO@CFs based PEC UV detector can reach 1.28 mA cm-2, which is about 7 times that of the ZnO@CFs based PEC UV detector, and the rising time is shortened from 0.17 to 0.10 s. The reason is that increased absorption of ultraviolet light induced by the localized surface plasmon resonance. In addition, the detector exhibits a good flexibility and remains flexible after hundreds of bends and twists. Moreover, the detector is responsive in the range of rotation angle from 0° to 360°. It provides an insight to improve the photoelectric performance and underwater omnidirectional detection ability of the PEC UV detector.

Wet Chemical Synthesis of Ultrathin γ-Ga2O3 Quantum Wires Enabling Far-UVC Photodetection with Ultrahigh Selectivity and Sensitivity

As compared to solar-blind ultraviolet (UV) photodetectors (PDs), far-UVC PDs not only show some irreplaceable advantages but also are more challenging to be developed. To solve this challenge, we report herein a soft template-assisted solvothermal route to synthesize ultrathin γ-Ga2O3 quantum wires (UQWs) with diameters down to 1-2 nm. These UQWs all exhibit a cluster-like absorption feature with a strong peak located between 190 and 230 nm and an edge below 250 nm, allowing highly selective absorption to far-UVC light. Notably, their normalized absorption coefficients were experimentally and theoretically confirmed to increase obviously with decreasing their diameters. Self-powered photoelectrochemical-type PDs based on Ga2O3 QWs of 1.7 nm diameter were therefore fabricated, exhibiting an excellent far-UVC detection performance with an unprecedented ultrahigh spectral selectivity (R210 nm/R250 nm = 452). As a proof of concept, this paper offers a new idea for developing ultrawide bandgap semiconductor materials and devices by leveraging a strong quantum confinement effect.

Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

Due to the wide range of potential applications for next-generation multi-functional devices, the flexible self-powered photodetector (PD) with polarity-switchable behavior is essential but very challenging to be realized. Herein, a wearable bidirectional self-powered PD based on detached (Al,Ga)N and (In,Ga)N nanowires has been proposed and demonstrated successfully. Arising from the photovoltage-competing dynamics across (Al,Ga)N and (In,Ga)N nanowire photoelectrodes, such PD can generate the positive (33.3 mA W -1) and negative (-0.019 mA W -1) photo-responsivity under ultraviolet (UV) and visible illumination, respectively, leading to the bidirectional photocurrent behavior. Thanks to the introduction of quasi solid-state hydrogel, the PD can work without the liquid-electrolyte, thus remarkably reducing the volume from about 482 cm3 to only 0.18 cm3. Furthermore, the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%, which is mainly attributed to the increased open circuit potential and reduced ion transport distance. As the GaN connecting segment is pretty thin, the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent density. Therefore, both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 times. With an excellent flexibility, this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices, e.g., wearable intelligent sensors.

Wide Response Range Photoelectrochemical UV Detector Based on Anodized TiO2-Nanotubes@Ti@quartz Structure

Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of electrodes on light absorption. We obtained a TiO2-nanotubes@Ti@quartz photoanode structure by precise treatment of a commercial Ti mesh by anodic oxidation. The structure can absorb any light in the near-UV band and has superior stability to other metal electrodes. The final encapsulated photoelectrochemical UV detectors exhibit good switching characteristics with a response time below 100 ms. The mechanism of the oxidation conditions on the photovoltaic performance of the device was investigated by the electrochemical impedance method, and we obtained the optimal synthesis conditions. Response tests under continuous spectroscopy confirm that the response range of the device is extended from 300-400 nm to 240-400 nm. This idea of a built-in collector is an effective way to extend the response range of a photoelectrochemical detector.

β-Ga2O3nanotube arrays for high-performance self-powered ultraviolet photoelectrochemical photodetectors

Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient optoelectronic systems due to their low energy consumption and high sensitivity. In this paper, the vertically alignedβ-Ga2O3nanotube arrays (NTs) have been prepared on GaN/sapphire substrate by the thermal oxidation process combined with the dry etching technology, and applied in the UV photoelectrochemical photodetectors (PEC-PDs) for the first time. Based on the large specific surface area ofβ-Ga2O3NTs on GaN/sapphire substrates and the solid/liquid heterojunction, the PEC-PDs exhibit excellent self-powered characteristics under 255 nm (UVA) and 365 nm (UVC) light illumination. Under 255 nm (365 nm) light illumination, the maximum responsivity of 49.9 mA W-1(32.04 mA W-1) and a high detectivity of 1.58 × 1011Jones (1.01 × 1011Jones) were achieved for theβ-Ga2O3NTs photodetectors at 0 V bias. In addition, the device shows a fast rise/decay time of 8/4 ms (4/2 ms), which is superior to the level of the previously reported self-powered UV PEC-PDs. This high-performance PEC-PD has potential applications in next-generation low-energy UV detection systems.

Integrating High-Sensitivity Photodetector and High-Energy Aqueous Battery in All-in-One Triple-Twisted Fiber

Fiber-shaped photodetectors (FPDs) have attracted special attention to wearable health monitoring due to their 3D absorption capabilities. However, the practical application of traditional FPDs is severely limited by the irreversible degradation of performance caused by vulnerable interface compatibility on complex deformation and a single function. Here, an integrated photoelectrochemical FPD/battery device (FPDB) is designed, consisting of a common electrode, photoanode, anode, and sol-gel electrolyte as an isolation layer, which not only effectively avoids the short circuit problem of FPD but also endows high-efficiency energy storage capacity. As expected, the resulting all-in-one triple-twisted fiber-shaped FPDB simultaneously achieves high responsiveness of 151.45 mA W-1 and excellent volume capacity of 18.75 mAh cm-3. Such a stable architectural design and multifunctional integration of functional fibers accelerate the development of next-generation wearable fabrics.

An A2 B2 O7 -Type High-Entropy Oxide for Efficient Photoelectrochemical Photodetector with Excellent Long-Term Stability

Optoelectronics with excellent long-term stability is meaningful for practical applications. Herein, for the first time, an A2 B2 O7 type high-entropy oxide of (La0.2 Ce0.2 Nd0.2 Gd0.2 Bi0.2 )2 Ti2 O7 (ATO) is synthesized and applied for photoelectrochemical photodetection. The lattice distortion, highly dispersed metal composition, and exposed active sites of ATO are beneficial for the fast separation and transmission of photogenerated electron/hole pairs, endowing ATO-based devices with good photodetection performance. Both the density functional theory calculations and the nondegenerate transient absorption spectroscopy demonstrate the good optoelectronic properties of ATO. The systematic experimental studies reveal the tunable photodetection capability of ATO-based photodetector (PD) in the visible region. A photocurrent of 772.00 nA cm-2 and a responsivity of 4.02 µA W-1 can be achieved as the PD in 1.0 m KOH with the bias potential of 0.6 V. Importantly, the robust and reproducible ON/OFF signals of the PD can be verified and there is only ≈5.00% attenuation in photocurrent even after 6 months, revealing the great potential of high- entropy oxides for practical applications.

Achieving High-Performance Self-Powered Visible-Blind Ultraviolet Photodetection Using Alloy Engineering

The exploration and development of self-powered visible-blind ultraviolet photodetectors (VBUV PDs) with high responsivity and wavelength selectivity have far-reaching significance for versatile applications. Although In2O3 shows potential for UV detection due to good UV absorption and electrical transport properties, the poor wavelength selectivity impedes further application in VBUV PDs. Here, a self-powered photoelectrochemical-type (PEC) VBUV PD is demonstrated by using gallium-indium oxide alloys (Ga-In OAs). The self-powered Ga-In OAs-based PEC VBUV PDs exhibit good VBUV photodetection performance, including a high responsivity of 50.04 mA/W and a high detectivity of 6.03 × 1010 Jones under 254 nm light irradiation, a good wavelength selectivity (UV/visible light rejection ratio of 262.45), and a fast response time (0.45/0.38 s). The good self-powered VBUV detection performance of Ga-In OAs is attributed to the larger band gap and smaller charge-transfer resistance induced by alloy engineering, which not only suppresses the absorption of visible light but also accelerates interfacial charge transfer. Moreover, an underwater optical communication system is demonstrated by using the self-powered Ga-In OAs PEC VBUV PDs. This study demonstrates that alloy engineering is a powerful tool to improve the performance of In2O3-based PEC PDs, and Ga-In OAs have great application potential for underwater optoelectronic devices.

Photoelectrochemical UV Detector Based on High-Temperature Resistant ITO Nanowire Network Transparent Conductive Electrodes: Both the Response Range and Responsivity Are Improved

UV transparent conductive electrodes based on transferable ITO nanowire networks were prepared to solve the problem of low UV light utilization in conventional photoelectrochemical UV detectors. The mutually cross-linked ITO nanowire network achieved good electrical conductivity and light transmission, and the novel electrode had a transmission rate of more than 80% throughout the near-UV and visible regions. Compared to Ag nanowire electrodes with similar functionality, the chemical stability of the ITO nanowire transparent conductive electrode ensured that the device worked stably in iodine-based electrolytes. More importantly, ITO electrodes composed of oxides could withstand temperatures above 800 °C, which is extremely critical for photoelectrochemical devices. After the deposition of a TiO₂ active layer using the high-temperature method, the response range of the photoelectrochemical UV detector was extended from a peak-like response between 300-400 nm to a plateau-like response between 200-400 nm. The responsivity was significantly increased to 56.1 mA/W. The relationship between ITO nanowire properties and device performance, as well as the reasons for device performance enhancement, were intensively investigated.

Design of blueberry anthocyanin/TiO2 composite layer-based photoanode and N-doped porous blueberry-derived carbon-loaded Ni nanoparticle-based counter electrode for dye-sensitized solar cells

P25/PBP (TiO₂, anthocyanins) prepared by combining PBP (blueberry peels) with P25, and N-doped porous carbon-supported Ni nanoparticles (Ni@NPC-X) prepared using blueberry-derived carbon were used for the application as photoanode and the counter electrode, respectively, in dye-sensitized solar cells (DSSCs) to create a new perspective for blueberry-based photo-powered energy systems. PBP was introduced into the P25 photoanode and carbonized to form a C-like structure after annealing that improved its adsorption capacity for N719 dye, contributing a 17.3% higher power conversion efficiency (PCE) of P25/PBP-Pt (5.82%) than that of P25-Pt (4.96%). The structure of the porous carbon changes from a flat surface to a petal-like structure due to the N doping by melamine, and the specific surface area increases. N-doped three-dimensional porous carbon supported the loading and reduced the agglomeration of Ni nanoparticles, reducing the charge transfer resistance, and providing a fast electron transfer path. The doping of Ni and N on the porous carbon worked synergistically to enhance the electrocatalytic activity of the Ni@NPC-X electrode. The PCE of the DSSCs assembled by Ni@NPC-1.5 and P25/PBP was 4.86%. Also, the Ni@NPC-1.5 electrode exhibited 116.12 F g^-1 and a capacitance retention rate of 98.2% (10 000 cycles), further confirming good electrocatalysis and cycle stability.

Ultrathin In2 O3 Nanosheets toward High Responsivity and Rejection Ratio Visible-Blind UV Photodetection

Photoelectrochemical-type visible-blind ultraviolet photodetectors (PEC VBUV PDs) have gained ever-growing attention due to their simple fabrication processes, uncomplicated packaging technology, and high sensitivity. However, it is still challenging to achieve high-performance PEC VBUV PDs based on a single material with good spectral selectivity. Here, it is demonstrated that individual ultrathin indium oxide (In₂ O₃ ) nanosheets (NSs) are suitable for designing high-performance PEC VBUV PDs with high responsivity and UV/visible rejection ratio for the first time. In₂ O₃ NSs PEC PDs show excellent UV photodetection capability with an ultrahigh photoresponsivity of 172.36 mA W^-1 and a high specific detectivity of 4.43 × 10¹¹ Jones under 254 nm irradiation, which originates from the smaller charge transfer resistance (R_ct ) at the In₂ O₃ NSs/electrolyte interface. The light absorption of In₂ O₃ NSs takes a blueshift due to the quantum confinement effect, granting good spectral selectivity for visible-blind detection. The UV/visible rejection ratio of In₂ O₃ NSs PEC PDs is 1567, which is 30 times higher than that of In₂ O₃ nanoparticles (NPs) and exceeds all recently reported PEC VBUV PDs. Moreover, In₂ O₃ NSs PEC PDs show good stability and good underwater imaging capability. The results verify that ultrathin In₂ O₃ NSs have potential in underwater optoelectronic devices.

Size-tunable bismuth quantum dots for self-powered photodetectors under ambient conditions

Although black phosphorus analogue, bismuthene, has been extensively investigated in recent years, yet the investigation into the photoelectronic devices is still in its infancy. In this contribution, uniform zero-dimensional (0D) bismuth (Bi) quantum dots (QDs) with different sizes were successfully synthesized by a simple solvothermal method. The as-synthesized 0D Bi QDs serve as working electrode materials by a direct deposition for photoelectrochemical (PEC)-type photodetection. The PEC results demonstrate that the as-fabricated 0D Bi QD-based electrode not only possess suitable self-powered broadband photoresponse, but also displays excellent photodetection performance. Under simulated light, the photocurrent density and photoresponsivity of the as-fabricated 0D Bi QD-based electrode can reach 2690 nA cm^-2, and 22.0μA W^-1, respectively. In addition, the as-prepared Bi QDs with the average diameter of 17 nm exhibit the best PEC photoresponse behavior in the studied size range of Bi QDs, mainly ascribed to the synergistic effect of suitable band gap and accessible active sites. It is anticipated that the uniform Bi QDs can be served as building blocks for a variety of photoelectronic devices, further expanding the application prospects of bismuthene, and can provide in-depth acknowledge on the performance optimization of monoelement Bi-based optical devices.

Vertically oriented SnS2 on MoS2 nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

Van der Waals heterostructures have great potential for the emerging self-powered photoelectrochemical photodetectors due to their outstanding photoelectric conversion capability and efficient interfacial carrier transportation. By considering the band alignment, structural design, and growth optimization, the heterostructures of vertically oriented SnS₂ with different densities on MoS₂ nanosheets are designed and fabricated using a two-step epitaxial growth method. Compared with SnS₂, MoS₂, and low density-vertical SnS₂/MoS₂ heterostructure, the high density-vertical SnS₂/MoS₂ heterostructure exhibits largely enhanced self-powered photodetection performances, such as a giant photocurrent density (∼932.8 μA cm^-2), an excellent photoresponsivity (4.66 mA W^-1), and an ultrafast response/recovery time (3.6/6.4 ms) in the ultraviolet-visible range. This impressive enhancement of high density-vertical SnS₂/MoS₂ photodetectors is mainly ascribed to the essentially improved charge transfer and carrier transport of type-II band alignment heterostructures and the efficient light absorption from the unique light-trapping structure. In addition, the photoelectrocatalytic water splitting performance of the high density-vertical SnS₂/MoS₂ heterostructure also benefits from the type-II band alignment and the light-trapping structure. This work provides valuable inspiration for the design of two-dimensional optoelectronic and photoelectrochemical devices with improved performance by the morphology and heterostructure design.

MOF-Derived In2O3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In₂O₃)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In₂O₃-based PEC UV PDs for the first time. In₂O₃ microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In₂O₃ MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 10¹⁰ Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In₂O₃ MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In₂O₃ holds great promise in high-performance PEC UV PDs.

Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal-Semiconductor-Metal Photodetectors with Liquid-Phase Procedure

Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced by 16.3% with pyramid-like structures. In this study, semitransparent, conductive Ag paste electrodes were manufactured using a screen-printing with liquid-phase process to form a flexible MSM broadband visible light photodetector. The transmittance of the homemade Ag paste solution fell between 34.83% and 36.98% in the wavelength range of visible light, from 400 nm to 800 nm. The highest visible light photosensitivity was 1.75 × 10⁴ at 19.5 W/m². The photocurrents of the flexible MSM broadband visible light photodetector were slightly changed under concave and convex conditions, displaying stable and durable bending properties.

Interfacial thermal transport of graphene/β-Ga2O3 heterojunctions: a molecular dynamics study with a self-consistent interatomic potential

Graphene/β-Ga₂O₃ heterojunctions are widely used in high-power and high-frequency devices, for which thermal management is vital to the device operation and life. Here we apply molecular dynamics simulation to calculate the interfacial thermal resistance (ITR) between graphene and β-Ga₂O₃. Based on the rigid ion model, a self-consistent interatomic potential with a set of parameters that can well reproduce the basic physical properties of crystal β-Ga₂O₃ is fitted. Using this potential, the effects of model size, interface type, temperature, vacancy defects and graphene hydrogenation on the ITR of graphene/β-Ga₂O₃ heterojunctions are evaluated. The results show that there is no obvious dependence of ITR on the size of graphene and β-Ga₂O₃. It is reported that the ITR values of the (100), (010) and (001) interfaces are 7.28 ± 0.35 × 10^-8 K m² W^-1, 6.69 ± 0.44 × 10^-8 K m² W^-1 and 5.22 ± 0.35 × 10^-8 K m² W^-1 at 300 K, respectively. Both temperature increase and vacancy defect increase can prompt the energy propagation across graphene/β-Ga₂O₃ interfaces due to the enhancement of phonon coupling. In addition, graphene hydrogenation provides new channels for in-plane and out-of-plane phonon coupling, and thus reduces the ITR between graphene and β-Ga₂O₃. This study provides basic strategies for the thermal design and management of graphene/β-Ga₂O₃ based photoelectric devices.

Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping

Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to its good light absorption and electrical transport properties. However, 2D InSe photodetectors usually endure a large driving voltage, and 2D InSe-based heterojunction photodetectors require complex fabrication processes. Here, we demonstrate high-performance self-powered InSe-based photoelectrochemical (PEC) photodetectors using electrochemical intercalated ultrathin InSe nanosheets. The ultrathin InSe nanosheets have good crystallinity with a uniform thickness of 1.4-2.1 nm, lateral size up to 18 μm, and yield of 82%. The self-powered InSe-based PEC photodetectors show broadband photoresponse ranging from 365 to 850 nm. The photoresponse of InSe-based PEC photodetectors is boosted by suppressing p-type doping of the intercalator with annealing, which improves the electrical properties and facilitates electron transport from InSe to the electrode. The self-powered annealed InSe (A-InSe) PEC photodetectors show a high responsivity of 10.14 mA/W and fast response speed of 2/37 ms. Moreover, the self-powered PEC photodetectors have good stability under UV-NIR irradiation. Furthermore, the photoresponse can be effectively tuned by the concentration and kind of electrolyte. The facile large-scale fabrication and good photoresponse demonstrate that 2D ultrathin InSe can be applied in high-performance optoelectronic devices.

InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

Two-dimensional (2D) van der Waals (vdW) materials with tunable heterostructures and superior optoelectronic properties have opened a new platform for various applications, e.g., field-effect transistors, ultrasensitive photodetectors and photocatalysts. In this work, an InSe/InSe(Ge) (germanium doped InSe) vdW heterostructure is designed to improve the photoresponse performance of sole InSe in a photoelectrochemical (PEC)-type photodetector. Photoelectrochemical measurements demonstrated that this heterostructure has excellent photoresponse characteristics, including a photocurrent density of 9.8 μA cm^-2, a photo-responsivity of 64 μA W^-1, and a response time/recovery time of 0.128 s/0.1 s. Moreover, the measurements also revealed the self-powering capability and long-term cycling stability of this heterostructure. The electronic properties of the prepared pure and Ge-doped single crystals unveiled a negative and temperature-independent thermoelectric power and temperature-activated resistivity. The negative character of dominating charge carriers was confirmed by Hall measurements, which corroborated by electrical resistivity revealed a carrier concentration below ∼10¹⁵ cm^-3 and an electron mobility of ∼500 cm² V^-1 s^-1 in Ge-doped crystals. Additionally, the Mott-Schottky model explored the mechanism of charge transfer and enhanced PEC performance. Band bending at the InSe/InSe(Ge)-electrolyte interface benefits the separation and transformation of photogenerated carriers from the heterostructure to electrolyte due to the tunable energy band alignment. These results indicate that the InSe/InSe(Ge) vdW heterostructure is promising for PEC-type photodetectors, which provide a novel way to utilize 2D vdW heterostructures in optoelectronics.

A solution-processed octahedral nano-blocks structure CaIn2S4film for UV/vis photodetection

A novel CaIn₂S₄with three-dimensional octahedral nano-blocks (ONBs) are successfully synthesized on fluorine-doped tin oxide (FTO) substrate by a simple hydrothermal method. The CaIn₂S₄ONBs are uniform grown and scattered on the whole FTO substrate with high regular and symmetric morphology as well as average diagonal length of about 600 nm. Based on the as-synthesized CaIn₂S₄ONBs, a photodetector (PD) is fabricated. Satisfyingly, it is found that the CaIn₂S₄ONBs PD achieves a broad-band response ranging from ultraviolet (UV) to visible ( vis) light at zero bias voltage. It is also significant that the CaIn₂S₄ONBs PD enables a fast response, in which the rise time and decay time are less than 0.15 and 0.2 s, respectively. Furthermore, the morphological evolution of the CaIn₂S₄ONBs and plausible UV/vis detection mechanism of the CaIn₂S₄ONBs PD are discussed.

Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.

CdS@CdSe Core/Shell Quantum Dots for Highly Improved Self-Powered Photodetection Performance

Uniform, well-defined cadmium sulfide@cadmium selenide core/shell quantum dots (CdS@CdSe QDs) were, for the first time, successfully synthesized by a solvothermal method and chemical bath growth for photoelectrochemical activities. The as-synthesized CdS@CdSe QDs not only exhibit superior self-powered photoresponse behavior and excellent stability under ambient conditions but also display significantly improved current densities and photoresponsivity compared to those of individual CdS QDs or CdSe QDs, mainly due to the built-in electric field, and thus have great potential in the fields of renewable energy and renewable energy consumption for carbon neutrality target achievement.

An electron donor-acceptor organic photoactive composite with Schottky heterojunction induced photoelectrochemical immunoassay

A signal enhancement photoelectrochemical (PEC) immunoassay system induced by the composite (PTCs@Au) of electron donor-acceptor with Schottky heterojunction was designed. Carcinoembryonic antigen (CEA) was selected as a model target. Initially, the capture anibody (Ab1) was linked to gold nanoparticles electrodeposited on glassy carbon electrode and sealed by bovine serum albumin. Meanwhile, the organic semiconductor (PTCs) with the structure of electron donor-acceptor was synthetized from perylene tetracarboxylic dianhydride (acceptor) and dopamine (donor) via amidation reaction. Then PTCs@Au composite with Schottky heterojunction was formed through gold nanoparticles in situ reduction and functionalization with PTCs. Next, the detection antibody was labeled by PTCs@Au composite (Ab2-PTCs@Au) as an immuno-probe. The PTCs@Au was introduced via sandwich immune reaction leading to enhancement PEC signal without additional electron donor nor acceptor for achieving quantitative detection of CEA under external light. The proposed immunoelectrode showed dynamic ranges of 0.5 fg mL^-1 to 10 pg mL^-1 and 10 pg mL^-1 to 1 μg mL^-1 with the detection limit of 0.17 fg mL^-1. In addition, this PEC strategy with acceptable selectivity and stability can be potentially applied to detect other targets by choosing appropriate target recognition unit.

Sensing of ultraviolet light: a transition from conventional to self-powered photodetector

Clouds in the sky pass almost 80% of ultraviolet (UV) radiation to the earth's surface, which has a significant impact on humankind. Conventional UV photodetectors (PDs) require an external battery, which not only increases the device size but also has a limited life span and maintenance costs can be prohibitively expensive. An alternative and more technically-sound solution would be the use of self-powered UV PDs that can operate independently, eliminating the need for an external source. Although many exciting studies have been done and state-of-the-art research is underway to successfully fabricate self-powered UV PDs, periodic reviews on this topic are deemed essential so that the technology's readiness can be properly evaluated and critical challenges can be addressed in a timely manner. In this article, the key issues and most exciting developments made in recent years on built-in electric field assisted self-powered UV PDs based on p-n homojunctions, p-n heterojunctions, and Schottky junctions followed by energy harvester integrated UV PDs are extensively reviewed. Finally, a summary and comparison of different types of self-powered UV PDs as well as future challenges that need to be addressed are discussed. This review sets a foundation providing essential insights into the present status of self-powered UV PDs with which researchers can engage and deal with the major challenges.

Full near-ultraviolet response photoelectrochemical ultraviolet detector based on TiO2nanocrystalline coated stainless steel mesh photoanode

In order to solve the 'ultraviolet (UV) filtering problem' caused by traditional sandwich-type structure in photoelectrochemical (PEC) UV detector, we design a special electrode based on stainless steel mesh, which integrates the light absorption layer and the electron collection electrode in a simple way. In combination with an UV-transparent quartz substrate, UV light can directly reach the active material. The improved detector shows good visible-blind, self-powered, and linear response characteristics. The serious recombination caused by metal electrode is suppressed by depositing a barrier layer. The optimized device exhibits a high photoresponse of 0.103 A W^-1at 296 nm, a short recovery time of 250 ms, and very sensitive switching ability. Furthermore, the response range of the detector is expanded from 300 to 400 nm to the full near-UV region. Our work provides an efficient strategy to solve the key problem of the PEC UV detector.

Two-Dimensional Gallium Sulfide Nanoflakes for UV-Selective Photoelectrochemical-type Photodetectors

Two-dimensional (2D) transition-metal monochalcogenides have been recently predicted to be potential photo(electro)catalysts for water splitting and photoelectrochemical (PEC) reactions. Differently from the most established InSe, GaSe, GeSe, and many other monochalcogenides, bulk GaS has a large band gap of ∼2.5 eV, which increases up to more than 3.0 eV with decreasing its thickness due to quantum confinement effects. Therefore, 2D GaS fills the void between 2D small-band-gap semiconductors and insulators, resulting of interest for the realization of van der Waals type-I heterojunctions in photocatalysis, as well as the development of UV light-emitting diodes, quantum wells, and other optoelectronic devices. Based on theoretical calculations of the electronic structure of GaS as a function of layer number reported in the literature, we experimentally demonstrate, for the first time, the PEC properties of liquid-phase exfoliated GaS nanoflakes. Our results indicate that solution-processed 2D GaS-based PEC-type photodetectors outperform the corresponding solid-state photodetectors. In fact, the 2D morphology of the GaS flakes intrinsically minimizes the distance between the photogenerated charges and the surface area at which the redox reactions occur, limiting electron-hole recombination losses. The latter are instead deleterious for standard solid-state configurations. Consequently, PEC-type 2D GaS photodetectors display a relevant UV-selective photoresponse. In particular, they attain responsivities of 1.8 mA W^-1 in 1 M H₂SO₄ [at 0.8 V vs reversible hydrogen electrode (RHE)], 4.6 mA W^-1 in 1 M Na₂SO₄ (at 0.9 V vs RHE), and 6.8 mA W^-1 in 1 M KOH (at 1.1. V vs RHE) under 275 nm illumination wavelength with an intensity of 1.3 mW cm^-2. Beyond the photodetector application, 2D GaS-based PEC-type devices may find application in tandem solar PEC cells in combination with other visible-sensitive low-band-gap materials, including transition-metal monochalcogenides recently established for PEC solar energy conversion applications.

Effect of the Length of TiO2 Nanotube Arrays on Responsivity of Photoelectrochemical-Based Ultraviolet Photodetectors

In this study, one-dimensional titanium dioxide (TiO[Formula: see text] nanotube arrays (NTAs) with different tube lengths are synthesized via anodic oxidation of Ti foils and their ultraviolet (UV) light detection properties are investigated to determine their optimum growth conditions. A TiO2 nanotube ultraviolet photodetector based on photoelectrochemical cell is fabricated using the optimum TiO2 nanotubes and its characteristics in the ultraviolet region are determined. The photodetector is examined under a UV illumination intensity of 10[Formula: see text]mW/cm2and at a wavelength of 368[Formula: see text]nm. Its responsivity is measured to be about 96[Formula: see text][Formula: see text]A/cm2 and its response time is less than 0.2[Formula: see text]s under an applied bias of 0.5[Formula: see text]V.

Dissymmetric interface design of SnO2/TiO2 side-by-side bi-component nanofibers as photoanodes for dye sensitized solar cells: Facilitated electron transport and enhanced carrier separation

SnO₂/TiO₂ type II heterojunctions are often introduced to enhance the separation efficiency of photogenerated carriers in photoelectrochemical electrodes, while most of these heterojunctions are of core-shell structure, which often limits the synergistic effect from the two components. In this work, dissymmetric SnO₂/TiO₂ side-by-side bi-component nanofibers (SBNFs) with tunable composition ratios have been prepared by a novel needleless electrospinning technique with two V-shape connected conductive channels (V-channel electrospinning). Results show that this V-channel electrospinning technique is more stable, controllable and tunable for the large-scale preparation of SBNF materials compared to the traditional electrospinning using two side-by-side metal needles. And these SnO₂/TiO₂ SBNFs are dissymmetric and comprised of a tiny SnO₂ NF (tunable diameter within 20-80 nm) and a Sn-doped TiO₂ NF (diameter of ~ 250 nm) with a side-by-side structure. Moreover, the dye-sensitized solar cells (DSSCs) based these dissymmetric SnO₂/TiO₂ SBNFs show the maximum power conversion efficiency (PCE) of 8.3%, which is 2.59 times that of the ones based on the TiO₂ NFs. Series of analyses indicate that the enhancements in PCE could mainly be due to the improved electron transport via SnO₂ NFs and the enhanced carrier separation via dissymmetric SnO₂/TiO₂ heterojunction interface. This research will give some new insight in the preparation of SBNFs for high-performance photoelectrochemical devices.

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.

Liquid-Phase Exfoliated GeSe Nanoflakes for Photoelectrochemical-Type Photodetectors and Photoelectrochemical Water Splitting

Photoelectrochemical (PEC) systems represent powerful tools to convert electromagnetic radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials are attracting enormous interest as potential advanced photo(electro)catalysts and, recently, 2D group-IVA metal monochalcogenides have been theoretically predicted to be water splitting photocatalysts. In this work, we use density functional theory calculations to theoretically investigate the photocatalytic activity of single-/few-layer GeSe nanoflakes for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) in pH conditions ranging from 0 to 14. Our simulations show that GeSe nanoflakes with different thickness can be mixed in the form of nanoporous films to act as nanoscale tandem systems, in which the flakes, depending on their thickness, can operate as HER- and/or OER photocatalysts. On the basis of theoretical predictions, we report the first experimental characterization of the photo(electro)catalytic activity of single-/few-layer GeSe flakes in different aqueous media, ranging from acidic to alkaline solutions: 0.5 M H2SO4 (pH 0.3), 1 M KCl (pH 6.5), and 1 M KOH (pH 14). The films of the GeSe nanoflakes are fabricated by spray coating GeSe nanoflakes dispersion in 2-propanol obtained through liquid-phase exfoliation of synthesized orthorhombic (Pnma) GeSe bulk crystals. The PEC properties of the GeSe nanoflakes are used to design PEC-type photodetectors, reaching a responsivity of up to 0.32 AW-1 (external quantum efficiency of 86.3%) under 455 nm excitation wavelength in acidic electrolyte. The obtained performances are superior to those of several self-powered and low-voltage solution-processed photodetectors, approaching that of self-powered commercial UV-Vis photodetectors. The obtained results inspire the use of 2D GeSe in proof-of-concept water photoelectrolysis cells.

Development of high-performance sensor based on NiO/SnO2 heterostructures to study sensing properties towards various reducing gases

In this work, we report the spontaneous formation of NiO nanoparticles-decorated onto smooth SnO₂ nanofibers, which is an inexpensive and scalable method for yielding a high composite surface area via a simple two-step synthesis process based on electrospinning and the hydrothermal method. A Nickel Oxide proton-conducting electrolyte is deposited homogeneously over a large surface area in a transparent solution, mixed and decorated onto Tin dioxide nanofibers, as evidenced by cross sectional imaging of the electrospun nanofibers. The composite based on nanoparticle-decorated fibers enlarges the surface area of the exposed electrolyte, which fundamentally improves the overall gas sensing performance. The crystal structure, morphology, and physio-chemical surface state of the NiO/SnO₂-based specimen are comprehensively examined using XRD, SEM, TEM, HRTEM, EDX, and photoelectron (XPS) spectroscopy. The composite based on NiO/SnO₂ nanoparticle-decorated fibers exhibits an optimistic mesoporous nature with a huge specific area, which is key for superior gas sensors. The result reveals that NiO/SnO₂ nanoparticle-decorated fibers with an average size of 180-260 nm in diameter, where the average length of fibers was about 1.5 μm. The composite-based heterojunction of NiO/SnO₂ nanoparticle-decorated fibers enhances the adsorption of oxygen molecules, which show fast response, good selectivity and quick recovery speed against ethanol gas at an optimal temperature of about 160 °C. The maximum sensitivity response of the sensor-based composite NiO/SnO₂ nanoparticle-decorated fibers was 23.87 in respect of 100 ppm ethanol gas at a low temperature of 160 °C; this is approximately about 7.2 times superior to that of pure SnO₂ nanofibers. The superior gas sensing capabilities of a composite based on NiO/SnO₂ nanoparticle-decorated fibers may be attributable to the enhanced catalytic effect of the small sized NiO nanoparticles on smooth SnO₂ nanofibers, together with the p/n heterojunction effects between NiO and SnO₂ heterostructures.

Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity

Graphdiyne (GDY), a newly emerging 2D carbon allotrope, has been widely explored in various fields owing to its outstanding electronic properties such as the intrinsic bandgap and high carrier mobility. Herein, GDY-based photoelectrochemical-type photodetection is realized by spin-coating ultrathin GDY nanosheets onto flexible poly(ethylene terephthalate) (PET) substrates. The GDY-based photodetectors (PDs) demonstrate excellent photo-responsive behaviors with high photocurrent (P_ph , 5.98 µA cm^{- 2} ), photoresponsivity (R_ph , 1086.96 µA W^{- 1} ), detectivity (7.31 × 10¹⁰ Jones), and excellent long-term stability (more than 1 month). More importantly, the PDs maintain an excellent P_ph after 1000 cycles of bending (4.45 µA cm^{- 2} ) and twisting (3.85 µA cm^{- 2} ), thanks to the great flexibility of the GDY structure that is compatible with the flexible PET substrate. Density functional theory (DFT) calculations are adopted to explore the electronic characteristics of GDY, which provides evidence for the performance enhancement of GDY in alkaline electrolyte. In this way, the GDY-based flexible PDs can enrich the fundamental study of GDY and pave the way for the exploration of GDY heterojunction-based photodetection.

Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion

Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.

Effect of Ag/rGO on the Optical Properties of Plasmon-Modified SnO2 Composite and Its Application in Self-Powered UV Photodetector

A facile hydrothermal method was employed to synthesize silver–reduced graphene oxide (Ag/rGO) plasmon-modified SnO2 composite, by incorporating Ag–reduced graphene oxide (Ag/rGO) into SnO2 nanorods as a photoanode for assembling a self-powered ultraviolet photodetector (UVPD). The as-synthesized samples were investigated in detail by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and UV visible spectrophotometer. The as-prepared Ag/rGO films show enhanced light absorption attributed to the localized surface plasmon resonance (LSPR). The optimized 1.0 wt.% Ag/rGO incorporated into SnO2-based UVPD exhibits a significant photocurrent response due to the enhanced absorption light and effective suppression of charge recombination. This UVPD demonstrates a high performance, with photocurrent density reaching 0.29 mAcm−2 compared to the SnO2-based device with 0.16 mAcm−2. This device also exhibits a high on:off ratio of 195 and fast response time, which are superior to that of the free-modified one. In addition, the UVPD based on plasmon-modified SnO2 photoanode treated with TiCl4-aqueous solution has attained a higher photocurrent with a maximum value reaching 5.4 mAcm−2, making this device favorable in ultraviolet detection.

Robust Photodetectable Paper from Chemically Exfoliated MoS2-MoO3 Multilayers

Photodetectors, which are capable of detecting light with varied wavelength, have nowadays been widely applied onto emerging fields such as security, entertainment, healthcare, environment, and so on. As the one with a two-dimensional layered structure, molybdenum disulfide (MoS₂) possesses striking optical and electrical properties that can be used in photodetecting, yet the challenges remain in terms of material processing, device fabrication simplicity, and enhancement of overall photodetection performance. In this work, a photodetectable paper based on a mixture of double-phased MoS₂ (1T and 2H) and MoO₃ was successfully fabricated through a straightforward route, that is, chemical exfoliation and deposition of MoS₂ powder on a flexible cellulose ester membrane, followed by inkjet-printed PEDOT:PSS as electrodes. The obtained device shows varied sensitivity to the light with different wavelengths. Compared with that under green and red lights, the prepared photodetector has the highest internal quantum efficiency (0.063%) and responsivity (0.134 mA W^-1), while having longest response/recovery time (17.5/15.3 s) when illuminated with purple light (405 nm). The achieved responsivity is much higher than other reported liquid exfoliation- and solution-derived MoS₂ photodetectors. This is ascribed to (1) the enhanced photoelectron generation caused by both MoS₂ and MoO₃ and (2) the good electric conductivity and efficient charge transport caused by the metallic 1T MoS₂. This work demonstrates the feasibility of fabricating the MoS₂-based photodetector with excellent performance through a simple exfoliation/filtration and inject printing route, and the detailed study on the response to light with different wavelengths unveils the interaction between the device and the incident light, further broadening the potential applications of such design.

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.

Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga2O3 heterojunction

In this paper, fast response, zero-biased, solar-blind UV photodetectors based on graphene/β-Ga₂O₃ heterojunctions were fabricated by transferring a monolayer graphene onto fresh cleaved β-Ga₂O₃ (100) single crystal substrate. At zero bias, the photo responsivity at 254 nm and the UV/visible rejection ratio (R₂₃₅ nm/R₄₀₀ nm) and the response time are obtained to be 10.3 mA/W and 2.28 × 10² and 2.24 μs, respectively, for the graphene/β-Ga₂O₃ (100) detector. The fast response and the high sensitivity can be attributed to the high mobility and UV transparency of graphene top-electrode and the low defect density of the β-Ga₂O₃ (100) cleaved surface. Such zero-biased detectors are very promising for next-generation solar-blind UV photodetection.

Optimal Sr-Doped Free TiO2@SrTiO3 Heterostructured Nanowire Arrays for High-Efficiency Self-Powered Photoelectrochemical UV Photodetector Applications

Due to their high performance, photoelectrochemical ultraviolet (UV) photodetectors have attracted much attention, but the recombination of photogenerated electrons at the interface of photoanode/electrolyte limited further improvement of photoelectrochemical UV photodetectors (PEC UVPDs). Modification of TiO2 photoanode by SrTiO3 could improve the performance of UVPD, because the energy barrier that is established at the TiO2–SrTiO3 interface could accelerate the separation of the photogenerated electrons-holes pair. However, the recombination center that is caused by the preparation of TiO2@SrTiO3 core-shell heterostructured nanostructure decreases the performance of PEC UVPDs, which is still an important problem that hindered its application in PEC UVPDs. In this paper, we presented a Sr-doped free TiO2@SrTiO3 core-shell heterostructured nanowire arrays as a photoanode for the self-powered PEC UVPD. This will not only accelerate the separation of the photogenerated electrons-holes pair, but it will also reduce the recombination of photogenerated electron-hole pairs in the photoanode. The intrinsic effect of SrTiO3 reaction time on the J variations of UVPDs is investigated in detail. An impressive responsivity of 0.358 A W−1 was achieved at 360 nm for the UVPD based on TiO2@SrTiO3 core-shell heterostructured nanowire arrays, which heretofore is a considerably high photoresponsivity for self-powered photoelectrochemical UVPDs. Additionally, this UVPD also exhibits a high on/off ratio, fast response time, excellent visible-blind characteristic, and linear optical signal response.

Solution Grown Single-Unit-Cell Quantum Wires Affording Self-Powered Solar-Blind UV Photodetectors with Ultrahigh Selectivity and Sensitivity

As crystalline semiconductor nanowires are thinned down to a single-unit-cell thickness, many fascinating properties could arise pointing to promising applications in various fields. A grand challenge is to be able to controllably synthesize such ultrathin nanowires. Herein, we report a strategy, which synergizes a soft template with oriented attachment (ST-OA), to prepare high-quality single-unit-cell semiconductor nanowires (SSNWs). Using this protocol, we are able to synthesize for the first time ZnS and ZnSe nanowires (NWs) with only a single-unit-cell thickness (less than 1.0 nm) and a cluster-like absorption feature (i.e., with a sharp, strong, and significantly blue-shifted absorption peak). Particularly, the growth mechanism and the single-unit-cell structure of the as-prepared ZnS SSNWs are firmly established by both experimental observations and theoretical calculations. Thanks to falling into the extreme quantum confinement regime, these NWs are found to only absorb the light with wavelengths shorter than 280 nm (i.e., solar-blind UV absorption). Utilizing such a unique property, self-powered photoelectrochemical-type photodetectors (PEC PDs) based on the ZnS SSNWs are successfully fabricated. The PDs after interface modification with TiO₂ exhibit an excellent solar-blind UV photoresponse performance, with a typical on/off ratio of 6008, a detectivity of 1.5 × 10¹² Jones, and a responsivity of 33.7 mA/W. This work opens the door to synthesizing and investigating a new dimension of nanomaterials with a wide range of applications.

Doping controlled pyro-phototronic effect in self-powered zinc oxide photodetector for enhancement of photoresponse

The pyro-phototronic effect can be used in pyroelectric semiconductor materials to significantly contribute in enhancing the self-powered photoresponse of photodetectors (PDs) via modulation of the photogenerated charge density. The pyro-phototronic effect in zinc oxide (ZnO) nanorods (NRs) was exploited thoroughly by doping with halogen elements, such as fluorine, chlorine (Cl), bromine and iodine. Cl-doped ZnO NRs (Cl : ZnO NRs) induces a large number of free charge carriers to enhance the self-powered photoresponse behavior (nearly 333% enhancement in response current) due to the pyro-phototronic effect as compared to pristine ZnO NRs. Moreover, 405% enhancement in pyrocurrent was measured for the Cl : ZnO NRs PD under a ultraviolet illumination intensity of 3 mW cm^-2, as compared to 0.3 mW cm^-2, in the absence of external bias voltage. Furthermore, other photoresponse parameters such as responsivity, external quantum efficiency and specific detectivity are measured to be higher due to the pyro-phototronic effect. Therefore, this study reveals the direct use of the pyro-phototronic effect to enhance the self-powered photoresponse.

Self-Powered Nanoscale Photodetectors

Novel self-powered nanoscale photodetectors that can work without an external power source, which have great application potential in next-generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state-of-the-art research results on self-powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal-semiconductor and semiconductor-graphene junctions. Next, recent developments of p-n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo-phototronic effect enhanced photodetection performances of Schottky junctions and p-n junctions are discussed. Then, significant results on the photoelectrochemical-cell-based photodetector and integrated self-powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self-powered photodetectors and spur new structure and device designs to further enhance photodetection performance.

Ultrathin ZnSe nanowires: one-pot synthesis via a heat-triggered precursor slow releasing route, controllable Mn doping and application in UV and near-visible light detection

We report herein a heat-triggered precursor slow releasing route for the one-pot synthesis of ultrathin ZnSe nanowires (NWs), which relies on the gradual dissolving of Se powder into oleylamine containing a soluble Zn precursor under heating. This route allows the reaction system to maintain a high monomer concentration throughout the entire reaction process, thus enabling the generation of ZnSe NWs with diameter down to 2.1 nm and length approaching 400 nm. The size-dependent optical properties and band-edge energy levels of the ZnSe NWs were then explored in depth by UV-visible spectroscopy and cyclic voltammetry, respectively. Considering their unique absorption properties, these NWs were specially utilized for fabricating photoelectrochemical-type photodetectors (PDs). Impressively, the PDs based on the ZnSe NWs with diameters of 2.1 and 4.5 nm exhibited excellent responses to UVA and near-visible light, respectively: both possessed ultrahigh on/off ratios (5150 for UVA and 4213 for near-visible light) and ultrawide linear response ranges (from 2.0 to 9000 μW cm^-2 for UVA and 5.0 to 8000 μW cm^-2 for near-visible light). Furthermore, these ZnSe NWs were selectively doped with various amounts of Mn²⁺ to tune their emission properties. As a result, ZnSe NW film-based photochromic cards were creatively developed for visually detecting UVA and near-visible radiation.

Self-powered ZnS Nanotubes/Ag Nanowires MSM UV Photodetector with High On/Off Ratio and Fast Response Speed

In this study, we design and demonstrate a novel type of self-powered UV photodetectors (PDs) using single-crystalline ZnS nanotubes (NTs) as the photodetecting layer and Ag nanowires (NWs) network as transparent electrodes. The self-powered UV PDs with asymmetric metal-semiconductor-metal (MSM) structure exhibit attractive photovoltaic characteristic at 0 V bias. Device performance analysis reveals that the as-assembled PDs have a high on/off ratio of 19173 and a fast response speed (τ_r = 0.09 s, τ_f = 0.07 s) without any external bias. These values are even higher than that of ZnS nanostructures- and ZnS heterostructure-based PDs at a large bias voltage. Besides, its UV sensivity, responsivity and detectivity at self-powered mode can reach as high as 19172, 2.56 A/W and 1.67 × 10¹⁰ cm Hz^1/2 W^-1, respectively. In addition, the photosensing performance of the self-powered UV PDs is studied in different ambient conditions (e.g., in air and vacuum). Moreover, a physical model based on band energy theory is proposed to explain the origin of the self-driven photoresponse characteristic in our device. The totality of the above study signifies that the present self-powered ZnS NTs-based UV nano-photodetector may have promising application in future self-powered optoelectronic devices and integrated systems.

Surface photo-charge effect in doped-ZnO nanorods for high-performance self-powered ultraviolet photodetectors

The unique photo-charge characteristics of chlorine-doped zinc oxide nanorods (Cl-ZnO NRs) are explored for the first time in ultraviolet (UV) photodetector (PD) that offers an outstanding self-powered photoresponse towards low UV illumination signals. A self-powered Cl-ZnO NRs PD exhibits superior photon detection speed of the order of a few ms with high sensitivity and photoelasticity. Therefore, the presented PD opens up a novel route to fabricate highly efficient self-powered PDs on a large scale without employing complex multilayer systems.

Interface/defect-tuneable macro and micro photoluminescence behaviours of trivalent europium ions in electrospun ZrO2/ZnO porous nanobelts

It was demonstrated that suitable interfaces between two materials can enhance the separation of photogenerated carriers. In this study, ZrO₂/ZnO interfaces with type I structure were designed and prepared by the electrospinning technique. The obtained ZrO₂/ZnO:Eu³⁺ (ZZOE) composites are highly porous in the form of nanobelts with width of 600-700 nm, comprising ZnO and ZrO₂ nanocrystals, and the Eu doping can hinder the t-m phase transition of ZrO₂. By tuning the annealing temperature, the inner stress and defects can be well controlled to improve the photoluminescence (PL) of the ZZOE porous nanobelts. Macro- and micro-PL spectra indicated that the body oxygen vacancies benefit the PL from Eu³⁺ ions, whereas the surficial ones do not. The optimal parameters for the preparation of ZZOE porous nanobelts were also investigated. Finally, a charge transfer mechanism was proposed to illuminate the PLs from the ZZOE porous nanobelts.

A high performance ZnO based photoelectrochemical cell type UV photodetector with [Co(bpy)3]3+/2+ electrolyte and PEDOT/ITO counter electrode

A high performance photoelectrochemical cell UV photodetector was prepared based on ZnO NRs, Co-complex electrolyte and PEDOT counter electrode.