1
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Song X, Jian Y, Wang X, Chen J, Shan Q, Zhang S, Chen Z, Chen X, Zeng H. Hybrid mixed-dimensional WTe 2/CsPbI 3perovskite heterojunction for high-performance photodetectors. NANOTECHNOLOGY 2023; 34:195201. [PMID: 36753757 DOI: 10.1088/1361-6528/acba1c] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe2/CsPbI3heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI3perovskite confirms the efficient charge transfer at the WTe2/CsPbI3heterojunction. After coupled with WTe2, the photoresponsivity of the CsPbI3photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe2/CsPbI3heterojunction photodetector reveals a large responsivity of 1157 A W-1and a high detectivity of 2.1 × 1013Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions.
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Affiliation(s)
- Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yuxuan Jian
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Xusheng Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Jiawei Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Zhanyang Chen
- Shangdong Gemei Tungsten & Molybdenum Material Co. LTD, Weihai 265222, People's Republic of China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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2
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Xu B, Zhu J, Xiao F, Liu N, Liang Y, Jiao C, Li J, Deng Q, Wu S, Wen T, Pei S, Wan H, Xiao X, Xia J, Wang Z. Electrically Tunable MXene Nanomechanical Resonators Vibrating at Very High Frequencies. ACS NANO 2022; 16:20229-20237. [PMID: 36508311 DOI: 10.1021/acsnano.2c05742] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As an emerging class of two-dimensional (2D) layered nanomaterial, MXene exhibits a number of intriguing properties, such as good electrical conductivity and high elastic modulus, and has witnessed continued growth in related device research. However, nanoscale MXene devices which leverage both the intrinsic electrical and mechanical properties of these 2D crystals have not been experimentally studied. Here we demonstrate nanoelectromechanical resonators based on 2D MXene crystals, where Ti3C2Tx drumheads with a wide range of thickness, from more than 50 layers all the way down to a monolayer, exhibit robust nanomechanical vibrations with fundamental-mode frequency f0 up to >70 MHz in the very high frequency (VHF) band, a displacement noise density down to 52 fm/Hz1/2, and a fundamental-mode frequency-quality factor product up to f0 × Q ≈ 6.85 × 109 Hz. By combining experimental results with theoretical calculations, we independently derive the Young's modulus of 2D Ti3C2Tx crystals to be 270-360 GPa, in excellent agreement with nanoindentation measurements, based on which we elucidate frequency scaling pathways toward microwave frequencies. We further demonstrate electrical tuning of resonance frequency in MXene resonators and frequency-shift-based MXene vacuum gauges with responsivity of 736%/Torr and detection range down to 10-4 Torr. Our study can lead to the design and creation of nanoscale vibratory devices that exploit the intrinsic electrical and mechanical properties in 2D MXene crystals.
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Affiliation(s)
- Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Na Liu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
- Department of Petroleum, Oil and Lubricants, Army Logistic Academy of PLA, Chongqing401331, China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Hujie Wan
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
| | - Xu Xiao
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu611731, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu611731, China
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3
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Zhu J, Xu B, Xiao F, Liang Y, Jiao C, Li J, Deng Q, Wu S, Wen T, Pei S, Xia J, Wang Z. Frequency Scaling, Elastic Transition, and Broad-Range Frequency Tuning in WSe 2 Nanomechanical Resonators. NANO LETTERS 2022; 22:5107-5113. [PMID: 35522819 DOI: 10.1021/acs.nanolett.2c00494] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Nanomechanical resonators based on atomic layers of tungsten diselenide (WSe2) offer intriguing prospects for enabling novel sensing and signal processing functions. The frequency scaling law of such resonant devices is critical for designing and realizing these high-frequency circuit components. Here, we elucidate the frequency scaling law for WSe2 nanomechanical resonators by studying devices of one-, two-, three-, to more than 100-layer thicknesses and different diameters. We observe resonant responses in both mechanical limits and clear elastic transition in between, revealing intrinsic material properties and devices parameters such as Young's modulus and pretension. We further demonstrate a broad frequency tuning range (up to 230%) with a high tuning efficiency (up to 23% V-1). Such tuning efficiency is among the highest in resonators based on two-dimensional (2D) layered materials. Our findings can offer important guidelines for designing high-frequency WSe2 resonant devices.
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Affiliation(s)
- Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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4
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Zhao ZJ, Ahn J, Lee D, Jeong CB, Kang M, Choi J, Bok M, Hwang S, Jeon S, Park S, Ko J, Chang KS, Choi JW, Park I, Jeong JH. Wafer-scale, highly uniform, and well-arrayed suspended nanostructures for enhancing the performance of electronic devices. NANOSCALE 2022; 14:1136-1143. [PMID: 34989389 DOI: 10.1039/d1nr07375c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Suspended nanostructures play an important role in enhancing the performance of a diverse group of nanodevices. However, realizing a good arrangement and suspension for nanostructures of various shapes remains a significant challenge. Herein, a rapid and simple method for fabricating wafer-scale, highly uniform, well-arrayed suspended nanostructures via nanowelding lithography is reported. Suspended nanostructures with various shapes (nanowires, nanoholes, nanomesh, and nanofilms) and materials (gold, silver, and palladium metals) were employed to demonstrate the applicability of our method. Moreover, gas sensors and thermoacoustic speakers with suspended nanowires outperformed those with unsuspended nanostructures. The proposed method is expected to help advance the development of future nanodevices based on suspended nanostructures.
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Affiliation(s)
- Zhi-Jun Zhao
- Institute of Smart City and Intelligent Transportation, Southwest Jiaotong University, No. 999 Pidu District, Chengdu, Sichuan, China
| | - Junseong Ahn
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Dongheon Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Chan Bae Jeong
- Center for Scientific Instrumentation, Korea Basic Science Institute (KBSI), Daejion 34133, Republic of Korea
| | - Mingu Kang
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Jungrak Choi
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Moonjeong Bok
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
| | - Soonhyoung Hwang
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
| | - Sohee Jeon
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
| | - Sooyeon Park
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Jiwoo Ko
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Ki Soo Chang
- Center for Scientific Instrumentation, Korea Basic Science Institute (KBSI), Daejion 34133, Republic of Korea
| | - Jung-Woo Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Inkyu Park
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Jun-Ho Jeong
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
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5
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Marini G, Calandra M. Light-Tunable Charge Density Wave Orders in MoTe_{2} and WTe_{2} Single Layers. PHYSICAL REVIEW LETTERS 2021; 127:257401. [PMID: 35029411 DOI: 10.1103/physrevlett.127.257401] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2021] [Accepted: 11/18/2021] [Indexed: 06/14/2023]
Abstract
By using constrained density functional theory modeling, we demonstrate that ultrafast optical pumping unveils hidden charge orders in group VI monolayer transition metal ditellurides. We show that irradiation of the insulating 2H phases stabilizes multiple transient charge density wave orders with light-tunable distortion, periodicity, electronic structure, and band gap. Moreover, optical pumping of the semimetallic 1T^{'} phases generates a transient charge ordered metallic phase composed of 2D diamond clusters. For each transient phase we identify the critical fluence at which it is observed and the specific optical and Raman fingerprints to directly compare with future ultrafast pump-probe experiments. Our work demonstrates that it is possible to stabilize charge density waves even in insulating 2D transition metal dichalcogenides by ultrafast irradiation.
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Affiliation(s)
- Giovanni Marini
- Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
| | - Matteo Calandra
- Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
- Department of Physics, University of Trento, Via Sommarive 14, 38123 Povo, Italy
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
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6
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Blundo E, Yildirim T, Pettinari G, Polimeni A. Experimental Adhesion Energy in van der Waals Crystals and Heterostructures from Atomically Thin Bubbles. PHYSICAL REVIEW LETTERS 2021; 127:046101. [PMID: 34355951 DOI: 10.1103/physrevlett.127.046101] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Revised: 05/08/2021] [Accepted: 06/07/2021] [Indexed: 06/13/2023]
Abstract
The formation of gas-filled bubbles on the surface of van der Waals crystals provides an ideal platform whereby the interplay of the elastic parameters and interlayer forces can be suitably investigated. Here, we combine experimental and numerical efforts to study the morphology of the bubbles at equilibrium and highlight unexpected behaviors that contrast with the common assumptions. We exploit such observations to develop an accurate analytical model to describe the shape and strain of the bubbles and exploit it to measure the adhesion energy between a variety of van der Waals crystals, showing sizable material-dependent trends.
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Affiliation(s)
- Elena Blundo
- Physics Department, Sapienza University of Rome, 00185 Roma, Italy
| | - Tanju Yildirim
- Center for Functional Sensor and Actuator (CFSN), Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Giorgio Pettinari
- Institute for Photonics and Nanotechnologies, National Research Council (CNR-IFN), 00156 Roma, Italy
| | - Antonio Polimeni
- Physics Department, Sapienza University of Rome, 00185 Roma, Italy
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7
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Falin A, Holwill M, Lv H, Gan W, Cheng J, Zhang R, Qian D, Barnett MR, Santos EJG, Novoselov KS, Tao T, Wu X, Li LH. Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS 2, WSe 2, and WTe 2. ACS NANO 2021; 15:2600-2610. [PMID: 33503379 DOI: 10.1021/acsnano.0c07430] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) tungsten disulfide (WS2), tungsten diselenide (WSe2), and tungsten ditelluride (WTe2) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS2, WSe2, and WTe2 using a complementary suite of experiments and theoretical calculations. High-quality 1L WS2 has the highest Young's modulus (302.4 ± 24.1 GPa) and strength (47.0 ± 8.6 GPa) of the entire family, overpassing those of 1L WSe2 (258.6 ± 38.3 and 38.0 ± 6.0 GPa, respectively) and WTe2 (149.1 ± 9.4 and 6.4 ± 3.3 GPa, respectively). However, the elasticity and strength of WS2 decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in an equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by the finite element method and density functional theory calculations including van der Waals interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS2 and WSe2 are largely stable in air for up to 20 weeks. Intriguingly, the 1-3L WSe2 shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications such as strain engineering and flexible field-effect transistors.
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Affiliation(s)
- Alexey Falin
- Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Matthew Holwill
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Haifeng Lv
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Material Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Gan
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Jun Cheng
- Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Rui Zhang
- Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Dong Qian
- Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Matthew R Barnett
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, EH9 3FD Edinburgh, United Kingdom
- The Higgs Centre for Theoretical Physics, The University of Edinburgh, EH9 3FD Edinburgh, United Kingdom
| | - Konstantin S Novoselov
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Material Science and Engineering, National University of Singapore, 117575 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 117546 Singapore
| | - Tao Tao
- Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Material Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lu Hua Li
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
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8
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Tu H, Zhang J, Guo Z, Xu C. Biaxial strain modulated the electronic structure of hydrogenated 2D tetragonal silicene. RSC Adv 2019; 9:42245-42251. [PMID: 35542882 PMCID: PMC9076574 DOI: 10.1039/c9ra08634j] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 12/16/2019] [Indexed: 11/21/2022] Open
Abstract
Silicene-based materials have attracted great attention due to their easier incorporation into silicon-based devices and components. In addition to the reported hydrogenated 2D tetragonal silicene (γ-SiH), we propose two stable atomic configurations of hydrogenated 2D tetragonal silicene (α-SiH and β-SiH) based on first-principles calculation. The calculated results indicate hydrogenation can effectively open the band gap of 2D tetragonal silicene, α-SiH is a semiconductor with a direct band gap of 2.436 eV whereas β-SiH is indirect band gap of 2.286 eV. We also find that the electronic band structure of α-SiH, β-SiH and γ-SiH can be modulated via biaxial strain. By applying biaxial strain in the range of -10% to 12%, the band gap of α-SiH, β-SiH and γ-SiH can be tuned in a range of 1.732-2.585 eV. Furthermore, direct-indirect or indirect-direct transition can be induced under biaxial strain, showing a high degree of flexibility in electronic band structure. The research not only broadens the diversity of hydrogenated 2D tetragonal silicenes, but also provides more possibilities of their applications in spintronic devices.
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Affiliation(s)
- Haoran Tu
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University Changchun 130012 China
| | - Jing Zhang
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University Changchun 130052 China
| | - Zexuan Guo
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University Changchun 130052 China
| | - Chunyan Xu
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University Changchun 130052 China
- Jilin Engineering Laboratory for Quantum Information Technology Changchun 130052 China
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9
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Ye F, Lee J, Feng PXL. Atomic layer MoS 2-graphene van der Waals heterostructure nanomechanical resonators. NANOSCALE 2017; 9:18208-18215. [PMID: 29160324 DOI: 10.1039/c7nr04940d] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS2-graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.
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Affiliation(s)
- Fan Ye
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
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10
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Yu P, Fu W, Zeng Q, Lin J, Yan C, Lai Z, Tang B, Suenaga K, Zhang H, Liu Z. Controllable Synthesis of Atomically Thin Type-II Weyl Semimetal WTe 2 Nanosheets: An Advanced Electrode Material for All-Solid-State Flexible Supercapacitors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28692747 DOI: 10.1002/adma.201701909] [Citation(s) in RCA: 44] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2017] [Revised: 05/11/2017] [Indexed: 06/07/2023]
Abstract
Compared with 2D S-based and Se-based transition metal dichalcogenides (TMDs), Te-based TMDs display much better electrical conductivities, which will be beneficial to enhance the capacitances in supercapacitors. However, to date, the reports about the applications of Te-based TMDs in supercapacitors are quite rare. Herein, the first supercapacitor example of the Te-based TMD is reported: the type-II Weyl semimetal 1Td WTe2 . It is demonstrated that single crystals of 1Td WTe2 can be exfoliated into the nanosheets with 2-7 layers by liquid-phase exfoliation, which are assembled into air-stable films and further all-solid-state flexible supercapacitors. The resulting supercapacitors deliver a mass capacitance of 221 F g-1 and a stack capacitance of 74 F cm-3 . Furthermore, they also show excellent volumetric energy and power densities of 0.01 Wh cm-3 and 83.6 W cm-3 , respectively, superior to the commercial 4V/500 µAh Li thin-film battery and the commercial 3V/300 µAh Al electrolytic capacitor, in association with outstanding mechanical flexibility and superior cycling stability (capacitance retention of ≈91% after 5500 cycles). These results indicate that the 1Td WTe2 nanosheet is a promising flexible electrode material for high-performance energy storage devices.
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Affiliation(s)
- Peng Yu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Wei Fu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Qingsheng Zeng
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Junhao Lin
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Cheng Yan
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zhuangchai Lai
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Bijun Tang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Hua Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zheng Liu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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11
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Naylor CH, Parkin WM, Gao Z, Kang H, Noyan M, Wexler RB, Tan LZ, Kim Y, Kehayias CE, Streller F, Zhou YR, Carpick R, Luo Z, Park YW, Rappe AM, Drndić M, Kikkawa JM, Johnson ATC. Large-area synthesis of high-quality monolayer 1T'-WTe 2 flakes. 2D MATERIALS 2017; 4:021008. [PMID: 29707213 PMCID: PMC5914533 DOI: 10.1088/2053-1583/aa5921] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Large-area growth of monolayer films of the transition metal dichalcogenides is of the utmost importance in this rapidly advancing research area. The mechanical exfoliation method offers high quality monolayer material but it is a problematic approach when applied to materials that are not air stable. One important example is 1T'-WTe2, which in multilayer form is reported to possess a large non saturating magnetoresistance, pressure induced superconductivity, and a weak antilocalization effect, but electrical data for the monolayer is yet to be reported due to its rapid degradation in air. Here we report a reliable and reproducible large-area growth process for obtaining many monolayer 1T'-WTe2 flakes. We confirmed the composition and structure of monolayer 1T'-WTe2 flakes using x-ray photoelectron spectroscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy and aberration corrected transmission electron microscopy. We studied the time dependent degradation of monolayer 1T'-WTe2 under ambient conditions, and we used first-principles calculations to identify reaction with oxygen as the degradation mechanism. Finally we investigated the electrical properties of monolayer 1T'-WTe2 and found metallic conduction at low temperature along with a weak antilocalization effect that is evidence for strong spin-orbit coupling.
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Affiliation(s)
- Carl H Naylor
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - William M Parkin
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Zhaoli Gao
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
- Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Hojin Kang
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
| | - Mehmet Noyan
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Robert B Wexler
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Liang Z Tan
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Youngkuk Kim
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Christopher E Kehayias
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Frank Streller
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Yu Ren Zhou
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Robert Carpick
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Zhengtang Luo
- Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Yung Woo Park
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
| | - Andrew M Rappe
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - James M Kikkawa
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - A T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
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12
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Luo X, Fang C, Wan C, Cai J, Liu Y, Han X, Lu Z, Shi W, Xiong R, Zeng Z. Magnetoresistance and Hall resistivity of semimetal WTe 2 ultrathin flakes. NANOTECHNOLOGY 2017; 28:145704. [PMID: 28103587 DOI: 10.1088/1361-6528/aa5abc] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
This article reports the characterization of WTe2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe2 thin films.
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Affiliation(s)
- Xin Luo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, People's Republic of China
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13
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Chen SY, Naylor CH, Goldstein T, Johnson ATC, Yan J. Intrinsic Phonon Bands in High-Quality Monolayer T' Molybdenum Ditelluride. ACS NANO 2017; 11:814-820. [PMID: 27943667 DOI: 10.1021/acsnano.6b07260] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The topologically nontrivial and chemically functional distorted octahedral (T') transition-metal dichalcogenides (TMDCs) are a type of layered semimetal that has attracted significant recent attention. However, the properties of monolayer (1L) T'-TMDC, a fundamental unit of the system, are still largely unknown due to rapid sample degradation in air. Here we report that well-protected 1L CVD T'-MoTe2 exhibits sharp and robust intrinsic Raman bands, with intensities about 1 order of magnitude stronger than those from bulk T'-MoTe2. The high-quality samples enabled us to reveal the set of all nine even-parity zone-center optical phonons, providing reliable fingerprints for the previously elusive crystal. By performing light polarization and crystal orientation resolved scattering analysis, we can effectively distinguish the intrinsic modes from Te-metalloid-like modes A (∼122 cm-1) and B (∼141 cm-1), which are related to the sample degradation. Our studies offer a powerful nondestructive method for assessing sample quality and for monitoring sample degradation in situ, representing a solid advance in understanding the fundamental properties of 1L-T'-TMDCs.
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Affiliation(s)
- Shao-Yu Chen
- Department of Physics, University of Massachusetts , Amherst, Massachusetts 01003, United States
| | - Carl H Naylor
- Department of Physics and Astronomy, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Thomas Goldstein
- Department of Physics, University of Massachusetts , Amherst, Massachusetts 01003, United States
| | - A T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Jun Yan
- Department of Physics, University of Massachusetts , Amherst, Massachusetts 01003, United States
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14
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Ye F, Lee J, Hu J, Mao Z, Wei J, Feng PXL. Environmental Instability and Degradation of Single- and Few-Layer WTe 2 Nanosheets in Ambient Conditions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:5802-5808. [PMID: 27607842 DOI: 10.1002/smll.201601207] [Citation(s) in RCA: 44] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2016] [Revised: 07/20/2016] [Indexed: 06/06/2023]
Abstract
The ambient environmental instability and degradation mechanism of single- and few-layer WTe2 are investigated. Oxidation of W and Te atoms appears to be a main reason for degradation. Single-layer samples' Raman signals disappear within 20 min in air. Few-layer WTe2 exhibits saturating degradation behavior: only the top layer WTe2 is oxidized; the degraded layer can protect inner layers from further degradation.
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Affiliation(s)
- Fan Ye
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH, 44106, USA
| | - Jaesung Lee
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH, 44106, USA
| | - Jin Hu
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, 70118, USA
| | - Zhiqiang Mao
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, 70118, USA
| | - Jiang Wei
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, 70118, USA
| | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH, 44106, USA
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15
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Song Q, Pan X, Wang H, Zhang K, Tan Q, Li P, Wan Y, Wang Y, Xu X, Lin M, Wan X, Song F, Dai L. The In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy. Sci Rep 2016; 6:29254. [PMID: 27404226 PMCID: PMC4941539 DOI: 10.1038/srep29254] [Citation(s) in RCA: 86] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2016] [Accepted: 06/15/2016] [Indexed: 11/27/2022] Open
Abstract
Tungsten ditelluride (WTe2) is a semi-metallic layered transition metal dichalcogenide with a stable distorted 1T phase. The reduced symmetry of this system leads to in-plane anisotropy in various materials properties. We have systemically studied the in-plane anisotropy of Raman modes in few-layer and bulk WTe2 by angle-dependent and polarized Raman spectroscopy (ADPRS). Ten Raman modes are clearly resolved. Their intensities show periodic variation with sample rotating. We identify the symmetries of the detected modes by quantitatively analyzing the ADPRS results based on the symmetry selection rules. Material absorption effect on the phonon modes with high vibration frequencies is investigated by considering complex Raman tensor elements. We also provide a rapid and nondestructive method to identify the crystallographic orientation of WTe2. The crystallographic orientation is further confirmed by the quantitative atomic-resolution force image. Finally, we find that the atomic vibrational tendency and complexity of detected modes are also reflected in the shrinkage degree defined based on ADPRS, which is confirmed by corresponding density functional calculation. Our work provides a deep understanding of the interaction between WTe2 and light, which will benefit in future studies about the anisotropic physical properties of WTe2 and other in-plane anisotropic materials.
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Affiliation(s)
- Qingjun Song
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China.,Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Xingchen Pan
- National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing, 210093, China.,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Haifeng Wang
- National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing, 210093, China.,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Kun Zhang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China.,Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Qinghai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Pan Li
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Yi Wan
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China.,Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Yilun Wang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China.,Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Xiaolong Xu
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China.,Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Miaoling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xiangang Wan
- National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing, 210093, China.,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing, 210093, China.,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China.,Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
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16
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Jia H, Yang R, Nguyen AE, Alvillar SN, Empante T, Bartels L, Feng PXL. Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators. NANOSCALE 2016; 8:10677-85. [PMID: 27150738 DOI: 10.1039/c6nr01118g] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
We report the fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few-layer MoS2 drumhead resonators (0.5-2 μm in diameter) offer fundamental resonances (f0) in the very high frequency (VHF) band (up to ∼120 MHz) and excellent figures-of-merit up to f0 × Q ≈ 3 × 10(10) Hz. A stretched circular diaphragm model allows us to estimate low pre-tension levels of typically ∼15 mN m(-1) in these devices. Compared to previous approaches, our transfer process features high yield and uniformity with minimal liquid and chemical exposure (only involving DI water), resulting in high-quality MoS2 crystals and exceptional device performance and homogeneity; and our process is readily applicable to other 2D materials.
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Affiliation(s)
- Hao Jia
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
| | - Rui Yang
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
| | - Ariana E Nguyen
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Sahar Naghibi Alvillar
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Thomas Empante
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Ludwig Bartels
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Philip X-L Feng
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
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17
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Song Q, Wang H, Xu X, Pan X, Wang Y, Song F, Wan X, Dai L. The polarization-dependent anisotropic Raman response of few-layer and bulk WTe2under different excitation wavelengths. RSC Adv 2016. [DOI: 10.1039/c6ra23687a] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
WTe2, which is an orthorhombic semimetal crystallized in Td phase, exhibts distinct in-plane anisotropy. The Raman modes depict different anisotropic response by rotating the incident polarization under different excitation wavelengths.
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Affiliation(s)
- Qingjun Song
- State Key Lab for Mesoscopic Physics and School of Physics
- Peking University
- Beijing 100871
- China
- Collaborative Innovation Center of Quantum Matter
| | - Haifeng Wang
- National Laboratory of Solid State Microstructures
- College of Physics
- Nanjing University
- Nanjing 210093
- China
| | - Xiaolong Xu
- State Key Lab for Mesoscopic Physics and School of Physics
- Peking University
- Beijing 100871
- China
- Collaborative Innovation Center of Quantum Matter
| | - Xingchen Pan
- National Laboratory of Solid State Microstructures
- College of Physics
- Nanjing University
- Nanjing 210093
- China
| | - Yilun Wang
- State Key Lab for Mesoscopic Physics and School of Physics
- Peking University
- Beijing 100871
- China
- Collaborative Innovation Center of Quantum Matter
| | - Fengqi Song
- National Laboratory of Solid State Microstructures
- College of Physics
- Nanjing University
- Nanjing 210093
- China
| | - Xiangang Wan
- National Laboratory of Solid State Microstructures
- College of Physics
- Nanjing University
- Nanjing 210093
- China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and School of Physics
- Peking University
- Beijing 100871
- China
- Collaborative Innovation Center of Quantum Matter
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