Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene

Patterned growth of two-dimensional atomic layer semiconductors

Transition metal dichalcogenides (TMDCs), which are representative of two-dimensional (2D) semiconductors, have attracted tremendous attention over the last two decades. TMDCs are regarded as potential candidates in modern nano- and optoelectronic applications due to their unique crystal structures and outstanding electronic and optoelectronic properties. For practical use, 2D semiconductors need to be fabricated with diverse morphologies for integration into electronic devices and to perform different functionalities. Controlled patterning synthesis with programmable geometries is therefore highly desired. We review state-of-the-art strategies for the patterned growth of atomic layer TMDCs and their heterostructures, including additive manufacturing and subtractive manufacturing for patterning single TMDC materials and the introduction of other low-dimensional nanomaterials as growth templates or hetero-atoms for element conversion in patterning TMDC heterostructures. The optoelectronic and electronic applications of the as-grown monolayer TMDC patterns are introduced. Future challenges and the prospects for the patterned growth of 2D semiconductors are discussed based on present achievements.

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O

Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS₂). We show that MoF₆ can be used as a fluorination source, which, when combined with alternating exposures of H₂O, etches both amorphous and crystalline MoS₂ films deposited by atomic layer deposition. To characterize the ALE process and understand the etching reaction mechanism, in situ quartz crystal microbalance (QCM), Fourier transform infrared (FTIR), and quadrupole mass spectrometry (QMS) experiments were performed. From temperature-dependent in situ QCM experiments, the mass change per cycle was -5.7 ng/cm² at 150 °C and reached -270.6 ng/cm² at 300 °C, nearly 50× greater. The temperature dependence followed Arrhenius behavior with an activation energy of 13 ± 1 kcal/mol. At 200 °C, QCM revealed a mass gain following exposure to MoF₆ and a net mass loss after exposure to H₂O. FTIR revealed the consumption of Mo-O species and formation of Mo-F and MoF _x =O species following exposures of MoF₆ and the reverse behavior following H₂O exposures. QMS measurements, combined with thermodynamic calculations, supported the removal of Mo and S through the formation of volatile MoF₂O₂ and H₂S byproducts. The proposed etching mechanism involves a two-stage oxidation of Mo through the ALE half-reactions. Etch rates of 0.5 Å/cycle for amorphous films and 0.2 Å/cycle for annealed films were measured by ex situ ellipsometry, X-ray reflectivity, and transmission electron microscopy. Precisely etching amorphous films and subsequently annealing them yielded crystalline, few-layer MoS₂ thin films. This thermal MoS₂ ALE process provides a new mechanism for fluorination-based ALE and offers a low-temperature approach for integrating amorphous and crystalline 2D MoS₂ films into high-volume device manufacturing with tight thermal budgets.

Site-selective growth of two-dimensional materials: strategies and applications

Over the years, there have been major advances in two-dimensional (2D) materials on account of their excellent and unique properties. Among the various strategies for 2D material fabrication, chemical vapor deposition (CVD) is considered as the most promising method to achieve large-area and high-quality 2D film growth. Furthermore, to realize the potential applications of 2D materials in different fields, the integration of 2D materials into functional devices is essential. However, the materials made by common CVD are randomly distributed on substrates, which is disadvantageous for fabricating arrays of devices. To solve this problem, a site-selective growth method was developed to meet the requirement of batch production for practical applications because it achieves control over the locations of products and benefits the subsequent direct integration. Herein, state-of-the-art methods for site-selective synthesis, including seeded growth and patterned growth, are reviewed. Then, the electronic and optoelectronic applications of the as-grown 2D materials are also reviewed. Finally, the remaining challenges and future prospects regarding site-selective methods and applications are discussed.

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.

Selective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter

Two-dimensional transition metal dichalcogenides (TMDs) offer numerous advantages over silicon-based application in terms of atomically thin geometry, excellent opto-electrical properties, layer-number dependence, band gap variability, and lack of dangling bonds. The production of high-quality and large-scale TMD films is required with consideration of practical technology. However, the performance of scalable devices is affected by problems such as contamination and patterning arising from device processing; this is followed by an etching step, which normally damages the TMD film. Herein, we report the direct growth of MoSe₂ films on selective pattern areas via a surface-mediated liquid-phase promoter using a solution-based approach. Our growth process utilizes the promoter on the selective pattern area by enhancing wettability, resulting in a highly uniform MoSe₂ film. Moreover, our approach can produce other TMD films such as WSe₂ films as well as control various pattern shapes, sizes, and large-scale areas, thus improving their applicability in various devices in the future. Our patterned MoSe₂ field-effect transistor device exhibits a p-type dominant conduction behavior with a high on/off current ratio of ∼10⁶. Thus, our study provides general guidance for direct selective pattern growth via a solution-based approach and the future design of integrated devices for a large-scale application.

Enhanced Electrical Properties of Lithography-Free Fabricated MoS2 Field Effect Transistors with Chromium Contacts

Molybdenum disulfide (MoS₂) as a two-dimensional semiconductor material has been actively explored for field-effect-transistors (FETs). The current prevailing method for MoS₂ FET fabrication involves multiple complex steps, including electron beam (e-beam) lithography, annealing, etc., which are time-consuming and require polymer resists. As a consequence, the MoS₂ exposed to chemicals during the patterning process may be unfavorably affected by residues and the performance of the final FET could be impaired while the annealing limits materials for FETs. Therefore, there is an urgent need to free the fabrication of FETs from e-beam lithography and annealing. In this study, we introduce an e-beam lithography-free method to fabricate MoS₂ FETs by employing maze-like source/drain electrodes. In addition, an ohmic contact in multilayer MoS₂ FETs using chromium (Cr) as source/drain electrodes is achieved without annealing. The underlying mechanism for contact performance is studied, and the tightness of the contact and the type of metal are found to be responsible because they determine the contact resistance. Furthermore, the long-term device degradation is explored, in which the oxidation of metal dominates. The facile fabrication process and mechanism explanation in this work might provide a new platform for future electronic devices.

Direct electron-beam patterning of monolayer MoS2 with ice

Two-dimensional transition metal dichalcogenides (TMDCs) are considered strong competitors for next generation semiconductor materials. In this paper, we propose direct electron-beam patterning of monolayer MoS2 inspired by an emerging ice lithography technique. Compared to conventional resist-based nanofabrication, ice-assisted patterning is free of contaminations from polymer resist and allows in situ processing of MoS2. The effects of electron beam dose and energy are investigated and nanoribbons with width below 30 nm are attainable. This method is expected to be applicable also to other TMDCs, providing a promising alternative for nanofabrication of 2D material devices.

Nonthermal Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Molybdenum Disulfide

Molybdenum disulfide (MoS2) is being studied for a wide range of applications including lithium-ion batteries and hydrogen evolution reaction catalysts. In this paper, we present a single-step nonthermal plasma-enhanced chemical vapor deposition (PECVD) process for the production of two-dimensional MoS2. This method provides an alternative route to established CVD and plasma synthesis routes. The approach presented here synthesizes films in only a few minutes using elemental sulfur (S8) and molybdenum pentachloride (MoCl5) as precursors. Deposition utilizes a nonthermal inductively coupled plasma reactor and temperatures around 500 °C. Film growth characteristics and nucleation are studied as a function of precursor concentrations, argon flow rate, plasma power, and deposition time. Few-layer two-dimensional (MoS2) films were formed at low precursor concentrations. Films with nanoparticle-like features were formed when the precursor concentration was high. Noncontinuous nonstoichiometric films were found at low plasma power, while high plasma power led to continuous films with good stoichiometry. The vacancies and defects in these films may provide active sites for hydrogen evolution.

Inkjet-defined site-selective (IDSS) growth for controllable production of in-plane and out-of-plane MoS2 device arrays

Along with the increasing interest in MoS2 as a promising electronic material, there is also an increasing demand for nanofabrication technologies that are compatible with this material and other relevant layered materials. In addition, the development of scalable nanofabrication approaches capable of directly producing MoS2 device arrays is an imperative task to speed up the design and commercialize various functional MoS2-based devices. The desired fabrication methods need to meet two critical requirements. First, they should minimize the involvement of resist-based lithography and plasma etching processes, which introduce unremovable contaminations to MoS2 structures. Second, they should be able to produce MoS2 structures with in-plane or out-of-plane edges in a controlled way, which is key to increase the usability of MoS2 for various device applications. Here, we introduce an inkjet-defined site-selective (IDSS) method that meets these requirements. IDSS includes two main steps: (i) inkjet printing of microscale liquid droplets that define the designated sites for MoS2 growth, and (ii) site-selective growth of MoS2 at droplet-defined sites. Moreover, IDSS is capable of generating MoS2 with different structures. Specifically, an IDSS process using deionized (DI) water droplets mainly produces in-plane MoS2 features, whereas the processes using graphene ink droplets mainly produce out-of-plane MoS2 features rich in exposed edges. Using out-of-plane MoS2 structures, we have demonstrated the fabrication of miniaturized on-chip lithium ion batteries, which exhibit reversible lithiation/delithiation capacity. This IDSS method could be further expanded as a scalable and reliable nanomanufacturing method for generating miniaturized on-chip energy storage devices.

Selective Synthesis of Bi2Te3/WS2 Heterostructures with Strong Interlayer Coupling

The vertical integration of atomically thin-layered materials to create van der Waals heterostructures (vdWHs) has been proposed as a method to design nanostructures with emergent properties. In this work, epitaxial Bi2Te3/WS2 vdWHs are synthesized via a two-step vapor deposition process. It is calculated that the vdWH has an indirect band gap with a valence band edge that bridges the vdW gap, resulting in a quenched photoluminescence (PL) from the WS2 monolayer, reduced intensity of its resonance Raman vibrational peaks, improved vertical charge transport, and a decrease in the intensity of second harmonic generation (SHG). Furthermore, it is observed that induced defects strongly influence the nucleation and growth of vdWHs. By creating point defects in WS2 monolayers, it is shown that the growth of Bi2Te3 platelets can be patterned. This work offers important insights into the synthesis, defect engineering, and moiré engineering of an emerging class of two-dimensional (2D) heterostructures.

Solution-gated transistors of two-dimensional materials for chemical and biological sensors: status and challenges

Two-dimensional (2D) materials have been the focus of materials research for many years due to their unique fascinating properties and large specific surface area (SSA). They are very sensitive to the analytes (ions, glucose, DNA, protein, etc.), resulting in their wide-spread development in the field of sensing. New 2D materials, as the basis of applications, are constantly being fabricated and comprehensively studied. In a variety of sensing applications, the solution-gated transistor (SGT) is a promising biochemical sensing platform because it can work at low voltage in different electrolytes, which is ideal for monitoring body fluids in wearable electronics, e-skin, or implantable devices. However, there are still some key challenges, such as device stability and reproducibility, that must be faced in order to pave the way for the development of cost-effective, flexible, and transparent SGTs with 2D materials. In this review, the device preparation, device physics, and the latest application prospects of 2D materials-based SGTs are systematically presented. Besides, a bold perspective is also provided for the future development of these devices.

Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers

With downscaling of device dimensions, two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) such as WS₂ are being considered as promising materials for future applications in nanoelectronics. However, at these nanoscale regimes, incorporating TMD layers in the device architecture with precise control of critical features is challenging using current top-down processing techniques. In this contribution, we pioneer the combination of two key avenues in atomic-scale processing: area-selective atomic layer deposition (AS-ALD) and growth of 2D materials, and demonstrate bottom-up processing of 2D WS₂ nanolayers. Area-selective deposition of WS₂ nanolayers is enabled using an ABC-type plasma-enhanced ALD process involving acetylacetone (Hacac) as inhibitor (A), bis(tert-butylimido)-bis(dimethylamido)-tungsten as precursor (B), and H₂S plasma as the co-reactant (C) at a low deposition temperature of 250 °C. The developed AS-ALD process results in the immediate growth of WS₂ on SiO₂ while effectively blocking growth on Al₂O₃ as confirmed by in situ spectroscopic ellipsometry and ex situ X-ray photoelectron spectroscopy measurements. As a proof of concept, the AS-ALD process is demonstrated on patterned Al₂O₃/SiO₂ surfaces. The AS-ALD WS₂ films exhibited sharp Raman (E _2g ¹ and A _1g) peaks on SiO₂, a fingerprint of crystalline WS₂ layers, upon annealing at temperatures within the thermal budget of semiconductor back-end-of-line processing (≤450 °C). Our AS-ALD process also allows selective growth on various TMDs and transition metal oxides while blocking growth on HfO₂ and TiO₂. It is expected that this work will lay the foundation for area-selective ALD of other 2D materials.

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous research interest for future electronics owing to their atomically thin thickness, compelling properties and various potential applications. However, interface engineering including contact optimization and channel modulations for 2D TMDCs represents fundamental challenges in ultimate performance of ultrathin electronics. This article provides a comprehensive overview of the basic understanding of contacts and channel engineering of 2D TMDCs and emerging electronics benefiting from these varying approaches. In particular, we elucidate multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and as well the novel electronics constructed by interface engineering such as diodes, circuits and memories. Finally, we conclude this review by addressing the current challenges facing 2D TMDCs towards next-generation electronics and offering our insights into future directions of this field.

Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications

The patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2D MoS₂ thin films on device ready SiO₂/Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to few-layered MoS₂ has been achieved. Furthermore, uniform films with exceptional conformality over 3D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2D MoS₂ and WS₂ thin films over a large area which opens up an avenue for their direct integration in future nano- and opto-electronic device applications.

Selective Growth of WSe2 with Graphene Contacts

Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe₂) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe₂ growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe₂ growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe₂-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe₂-graphene are presented.

Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics

Edge contacts between two-dimensional (2D) materials in the in-plane direction can achieve minimal contact area and low contact resistance, producing atomically thin devices with improved performance. Particularly, lateral heterojunctions of metallic graphene and semiconducting transition metal dichalcogenides (TMDs) exhibit small Schottky barrier heights due to graphene's low work-function. However, issues exist with the fabrication of highly transparent and flexible multi-functional devices utilizing lateral heterostructures (HSs) of graphene and TMDs via spatially controlled growth. This review demonstrates the growth and electronic applications of lateral HSs of graphene and TMDs, highlighting key technologies controlling the wafer-scale growth of continuous films for practical applications. It deepens the understanding of the spatially controlled growth of lateral HSs using chemical vapor deposition methods, and also contributes to the applications that depend on the scale-up of all-2D electronics with ultra-high electrical performance.

Maskless Micro/Nanopatterning and Bipolar Electrical Rectification of MoS2 Flakes Through Femtosecond Laser Direct Writing

Molybdenum disulfide (MoS₂) micro/nanostructures are desirable for tuning electronic properties, developing required functionality, and improving the existing performance of multilayer MoS₂ devices. This work presents a useful method to flexibly microprocess multilayer MoS₂ flakes through femtosecond laser pulse direct writing, which can directly fabricate regular MoS₂ nanoribbon arrays with ribbon widths of 179, 152, 116, 98, and 77 nm, and arbitrarily pattern MoS₂ flakes to form micro/nanostructures such as single nanoribbon, labyrinth array, and cross structure. This method is mask-free and simple and has high flexibility, strong controllability, and high precision. Moreover, numerous oxygen molecules are chemically and physically adsorbed on laser-processed MoS₂, attributed to roughness defect sites and edges of micro/nanostructures that contain numerous unsaturated edge sites and highly active centers. In addition, electrical tests of the field-effect transistor fabricated from the prepared MoS₂ nanoribbon arrays reveal new interesting features: output and transfer characteristics exhibit a strong rectification (not going through zero and bipolar conduction) of drain-source current, which is supposedly attributed to the parallel structures with many edge defects and p-type chemical doping of oxygen molecules on MoS₂ nanoribbon arrays. This work demonstrates the ability of femtosecond laser pulses to directly induce micro/nanostructures, property changes, and new device properties of two-dimensional materials, which may enable new applications in electronic devices based on MoS₂ such as logic circuits, complementary circuits, chemical sensors, and p-n diodes.

Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)₂ atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

Additive manufacturing of patterned 2D semiconductor through recyclable masked growth

The 2D van der Waals crystals have shown great promise as potential future electronic materials due to their atomically thin and smooth nature, highly tailorable electronic structure, and mass production compatibility through chemical synthesis. Electronic devices, such as field effect transistors (FETs), from these materials require patterning and fabrication into desired structures. Specifically, the scale up and future development of "2D"-based electronics will inevitably require large numbers of fabrication steps in the patterning of 2D semiconductors, such as transition metal dichalcogenides (TMDs). This is currently carried out via multiple steps of lithography, etching, and transfer. As 2D devices become more complex (e.g., numerous 2D materials, more layers, specific shapes, etc.), the patterning steps can become economically costly and time consuming. Here, we developed a method to directly synthesize a 2D semiconductor, monolayer molybdenum disulfide (MoS2), in arbitrary patterns on insulating SiO2/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineering. This method shows the potential of using the prepatterned substrates as a master template for the repeated growth of monolayer MoS2 patterns. Our technique currently produces arbitrary monolayer MoS2 patterns at a spatial resolution of 2 μm with excellent homogeneity and transistor performance (room temperature electron mobility of 30 cm2 V-1 s-1 and on-off current ratio of 107). Extending this patterning method to other 2D materials can provide a facile method for the repeatable direct synthesis of 2D materials for future electronics and optoelectronics.

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post-silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high-performance devices while adapting for large-area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS₂ devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD-grown MoS₂ film and a Ag electrode as an interfacial layer. The MoS₂ field-effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field-effect mobility of 35 cm² V^-1 s^-1 , an on/off current ratio of 4 × 10⁸ , and a photoresponsivity of 2160 A W^-1 , compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n-doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS₂ and electrodes. This demonstration of contact interface engineering with CVD-grown MoS₂ and graphene is a key step toward the practical application of atomically thin TMDC-based devices with low-resistance contacts for high-performance large-area electronics and optoelectronics.

Rubbing-Induced Site-Selective Growth of MoS2 Device Patterns

The superior electronic and mechanical properties of two-dimensional layered transition-metal dichalcogenides could be exploited to make a broad range of devices with attractive functionalities. However, the nanofabrication of such layered material-based devices still needs resist-based lithography and plasma etching processes for patterning layered materials into functional device features. Such patterning processes lead to unavoidable contaminations, to which the transport characteristics of atomically thin-layered materials are very sensitive. More seriously, such lithography-introduced contaminants cannot be safely eliminated by conventional semiconductor cleaning approaches. This challenge seriously retards the manufacturing of large arrays of layered material-based devices with consistent characteristics. Toward addressing this challenge, we introduce a rubbing-induced site-selective growth method capable of directly generating few-layer MoS₂ device patterns without the need of any additional patterning processes. This method consists of two critical steps: (i) a damage-free mechanical rubbing process for generating microscale triboelectric charge patterns on a dielectric surface and (ii) site-selective deposition of MoS₂ within rubbing-induced charge patterns. Our microscopy characterizations in combination with finite element analysis indicate that the field magnitude distribution within triboelectric charge patterns determines the morphologies of grown MoS₂ patterns. In addition, the MoS₂ line patterns produced by the presented method have been implemented for making arrays of working transistors and memristors. These devices exhibit a high yield and good uniformity in their electronic properties over large areas. The presented method could be further developed into a cost-efficient nanomanufacturing approach for producing functional device patterns based on various layered materials.

Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire

Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS₂) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS₂ grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS₂-substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS₂, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS₂ growth on sapphire was further developed to the rational synthesis of an in-plane MoS₂-graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS₂ parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS₂ was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials

We identify a new universality in the carrier transport of two-dimensional (2D) material-based Schottky heterostructures. We show that the reversed saturation current (J) scales universally with temperature (T) as log(J/T^{β})∝-1/T, with β=3/2 for lateral Schottky heterostructures and β=1 for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic systems, single- and few-layer graphene, transition metal dichalcogenides, and thin films of topological solids. Such universalities originate from the strong coupling between the thermionic process and the in-plane carrier dynamics. Our model resolves some of the conflicting results from prior works and is in agreement with recent experiments. The universal scaling laws signal the breakdown of β=2 scaling in the classic diode equation widely used over the past sixty years. Our findings shall provide a simple analytical scaling for the extraction of the Schottky barrier height in 2D material-based heterostructures, thus paving the way for both a fundamental understanding of nanoscale interface physics and applied device engineering.

Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor

The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

Chemical synthesis of two-dimensional atomic crystals, heterostructures and superlattices

Two-dimensional atomic crystals (2DACs) have attracted intense recent interest. With a nearly perfect crystalline structure and dangling-bond free surface, these atomically thin materials have emerged as a new material platform for fundamental materials science and diverse technology opportunities at the limit of single atom thickness. Over the past decade, a wide range of 2DACs has been prepared by mechanically exfoliating bulk layered crystals, which has fueled the rapid progress of the entire field in terms of fundamental physics and basic device demonstrations. However, studies to date are largely limited to mechanically exfoliated flakes, which are clearly not scalable for practical applications. The chemical synthesis of these materials has been lagging far behind fundamental property investigations or novel device demonstrations, which limits further progress of the field. To explore the full potential of 2DACs requires a robust synthesis of these atomically thin materials and scalable construction of complex heterostructures with designed spatial modulation of chemical compositions and electronic structures. The extreme aspect ratio and highly delicate nature of the atomically thin crystals pose a significant synthetic challenge beyond traditional bulk crystals and have motivated considerable efforts worldwide. Here we will review the recent advances, challenges and future perspective of the chemical synthesis of 2DACs, heterostructures and superlattices.

CVD-grown monolayer MoS2 in bioabsorbable electronics and biosensors

Transient electronics represents an emerging technology whose defining feature is an ability to dissolve, disintegrate or otherwise physically disappear in a controlled manner. Envisioned applications include resorbable/degradable biomedical implants, hardware-secure memory devices, and zero-impact environmental sensors. 2D materials may have essential roles in these systems due to their unique mechanical, thermal, electrical, and optical properties. Here, we study the bioabsorption of CVD-grown monolayer MoS₂, including long-term cytotoxicity and immunological biocompatibility evaluations in biofluids and tissues of live animal models. The results show that MoS₂ undergoes hydrolysis slowly in aqueous solutions without adverse biological effects. We also present a class of MoS₂-based bioabsorbable and multi-functional sensor for intracranial monitoring of pressure, temperature, strain, and motion in animal models. Such technology offers specific, clinically relevant roles in diagnostic/therapeutic functions during recovery from traumatic brain injury. Our findings support the broader use of 2D materials in transient electronics and qualitatively expand the design options in other areas.

Transient electronics entails the capability of electronic components to dissolve or reabsorb in a controlled manner when used in biomedical implants. Here, the authors perform a systematic study of the processes of hydrolysis, bioabsorption, cytotoxicity and immunological biocompatibility of monolayer MoS₂.

Synthesis, structure and applications of graphene-based 2D heterostructures

With the profuse amount of two-dimensional (2D) materials discovered and the improvements in their synthesis and handling, the field of 2D heterostructures has gained increased interest in recent years. Such heterostructures not only overcome the inherent limitations of each of the materials, but also allow the realization of novel properties by their proper combination. The physical and mechanical properties of graphene mean it has a prominent place in the area of 2D heterostructures. In this review, we will discuss the evolution and current state in the synthesis and applications of graphene-based 2D heterostructures. In addition to stacked and in-plane heterostructures with other 2D materials and their potential applications, we will also cover heterostructures realized with lower dimensionality materials, along with intercalation in few-layer graphene as a special case of a heterostructure. Finally, graphene heterostructures produced using liquid phase exfoliation techniques and their applications to energy storage will be reviewed.

Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier

Single-layer molybdenum disulfide (MoS₂) has attracted significant attention due to its electronic and physical properties, with much effort invested toward obtaining large-area high-quality monolayer MoS₂ films. In this work, we demonstrate a reactive-barrier-based approach to achieve growth of highly homogeneous single-layer MoS₂ on sapphire by the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO₃, the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 μm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement by observation of a very well resolved electronic band structure and spin-orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS₂ monolayer.

Probing the local interface properties at a graphene–MoSe2 in-plane lateral heterostructure: an ab initio study

We report a theoretical study of the local interface properties at a graphene–MoSe₂ (G–MoSe₂) in-plane lateral heterostructure.

Grains in Selectively Grown MoS2 Thin Films

Transition metal dichalcogenides (TMDCs) have recently been studied using various synthesis methods, such as chemical vapor deposition for large-scale production. Despite the realization of large-scale production with high material quality, a range of approaches have been made to solve the patterning issue of TMDCs focusing on the application of integrated devices; however, patterning is still under study to accurately represent nanoscale-sized patterns, as well as the desired positions and shapes. Here, an insulating substrate is treated selectively with O₂ plasma, and MoS₂ growth is induced in the superhydrophilic area. Selectively well-grown MoS₂ patterns are confirmed by atomic force microscopy and Raman and photoluminescence spectroscopy. In addition, the grain size, according to the growth size, and grain boundary are analyzed by annual dark field transmission electron microscopy (TEM) and spherical aberration-corrected scanning TEM to confirm the selective growth. An analysis of the device performance and the optical properties reveals an enhancement with increasing grain size. This method presents the path of the growth technique for patterning, as well as the direction that can be applied to devices and integrated circuits.

Electron dynamics in MoS2-graphite heterostructures

The electron dynamics in heterostructures formed by multilayer graphite and monolayer or bulk MoS₂ were studied by femtosecond transient absorption measurements. Samples of monolayer MoS₂-multilayer graphite and bulk MoS₂-multilayer graphite were fabricated by exfoliation and dry transfer techniques. Ultrafast laser pulses were used to inject electron-hole pairs into monolayer or bulk MoS₂. The transfer of these photocarriers to the adjacent multilayer graphite was time resolved by measuring the differential reflection of a probe pulse. We found that photocarriers injected into monolayer MoS₂ transfer to graphite on an ultrafast time scale shorter than 400 fs. Such an efficient charge transfer is key to the development of high performance optoelectronic devices with MoS₂ as the light absorbing layer and graphite as electrodes. The absorption coefficient of monolayer MoS₂ can be controlled by the carriers in graphite. This process can be used for interlayer coupling and control. In a bulk MoS₂-graphite heterostructure, the photocarrier transfer time is about 220 ps, due to the inefficient interlayer charge transport in bulk MoS₂. These results provide useful information for developing optoelectronic devices based on MoS₂-graphite heterostructures.

Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures

Large-area two-dimensional (2D) heterojunctions are promising building blocks of 2D circuits. Understanding their intriguing electrostatics is pivotal but largely hindered by the lack of direct observations. Here graphene-WS₂ heterojunctions are prepared over large areas using a seedless ambient-pressure chemical vapor deposition technique. Kelvin probe force microscopy, photoluminescence spectroscopy, and scanning tunneling microscopy characterize the doping in graphene-WS₂ heterojunctions as-grown on sapphire and transferred to SiO₂ with and without thermal annealing. Both p-n and n-n junctions are observed, and a flat-band condition (zero Schottky barrier height) is found for lightly n-doped WS₂, promising low-resistance ohmic contacts. This indicates a more favorable band alignment for graphene-WS₂ than has been predicted, likely explaining the low barriers observed in transport experiments on similar heterojunctions. Electrostatic modeling demonstrates that the large depletion width of the graphene-WS₂ junction reflects the electrostatics of the one-dimensional junction between two-dimensional materials.