Recent progress in van der Waals heterojunctions

Molecular modulation of interfaces in a Z-scheme van der Waals heterojunction for highly efficient photocatalytic CO2 reduction

The construction of van der Waals (vdW) heterojunctions is a key approach for efficient and stable photocatalysts, attracting marvellous attention due to their capacity to enhance interfacial charge separation/transfer and offer reactive sites. However, when a vdW heterojunction is made through an ex-situ assembly, electron transmission faces notable obstacles at the components interface due to the substantial spacing and potential barrier. Herein, we present a novel strategy to address this challenge via wet chemistry by synthesizing a functionalized graphene-modulated Z-scheme vdW heterojunction of zinc phthalocyanine/tungsten trioxide (xZnPc/yG-WO3). The functionalized G-modulation forms an electron "bridge" across the ZnPc/WO3 interface to improve electron transfer, get rid of barriers, and ultimately facilitating the optimal transfer of excited photoelectrons from WO3 to ZnPc. The Zn2+ in ZnPc picks up these excited photoelectrons, turning CO2 into CO/CH4 (42/22 μmol.g-1.h-1) to deliver 17-times better efficiency than pure WO3. Therefore, the introduction of a molecular "bridge" as a means to establish an electron transfer conduit represents an innovative approach to fabricate efficient photocatalysts designed for the conversion of CO2 into valued yields.

Tunable electronic structures, Rashba splitting, and optical and photocatalytic responses of MSSe-PtO2 (M = Mo, W) van der Waals heterostructures

Binding energies, AIMD simulation and phonon spectra confirm both the thermal and dynamical stabilities of model-I and model-II of MSSe-PtO2 (M = Mo, W) vdWHs. An indirect type-II band alignment in both the models of MSSe-PtO2 vdWHs and a larger Rashba spin splitting in model-II than in model-I provide a platform for experimental design of MSSe-PtO2 vdWHs for optoelectronics and spintronic device applications. Transfer of electrons from the MSSe layer to the PtO2 layer at the interface of MSSe-PtO2 vdWHs makes MSSe (PtO2) p(n)-type. Large absorption in the visible region of MoSSe-PtO2 vdWHs, while blue shifts in WSSe-PtO2 vdWHs are observed. In the case of model-II of MSSe-PtO2 vdWHs, a further blue shift is observed. Furthermore, the photocatalytic response shows that MSSe-PtO2 vdWHs cross the standard water redox potentials confirming their capability to split water into H+/H2 and O2/H2O.

Substitutional doping of MoTe2/ZrS2 heterostructures for sustainable energy related applications

Stacking and/or substitutional doping are effective strategies to tune two-dimensional materials with desired properties, greatly extending the applications of the pristine materials. Here, by employing first-principles calculations, we propose that a pristine MoTe2/ZrS2 heterostructure is a distinguished lithium-ion battery anode material with a low Li diffusion barrier (∼0.26 eV), and it has a high maximum Li storage capacity (476.36 mA h g-1) and a relatively low open-circuit voltage (0.16 V) at Li4/MoTe2/Li/ZrS2/Li4. The other heterostructures with different types can be achieved by substitutional doping and their potential applications in sustainable energy related areas are further unraveled. For instance, a type-II TeMoSe/ZrS2 heterostructure could be a potential direct Z-scheme photocatalyst for water splitting with a high solar-to-hydrogen conversion efficiency of 17.62%. The TeMoSe/SZrO heterostructure is predicted to be a potential candidate for application in highly efficient solar cells. Its maximum power conversion efficiency can be as high as 19.21%, which is quite promising for commercial applications. The present results will shed light on the sustainable energy applications of pristine or doped MoTe2/ZrS2 heterostructures in the future.

Solution-Processed Heterojunction Photodiodes Based on WSe2 Nanosheet Networks

Solution-processed photodetectors incorporating liquid-phase-exfoliated transition metal dichalcogenide nanosheets are widely reported. However, previous studies mainly focus on the fabrication of photoconductors, rather than photodiodes which tend to be based on heterojunctions and are harder to fabricate. Especially, there are rare reports on introducing commonly used transport layers into heterojunctions based on nanosheet networks. In this study, a reliable solution-processing method is reported to fabricate heterojunction diodes with tungsten selenide (WSe2 ) nanosheets as the optical absorbing material and PEDOT: PSS and ZnO as injection/transport-layer materials. By varying the transport layer combinations, the obtained heterojunctions show rectification ratios of up to ≈104 at ±1 V in the dark, without relying on heavily doped silicon substrates. Upon illumination, the heterojunction can be operated in both photoconductor and photodiode modes and displays self-powered behaviors at zero bias.

Direct Z-scheme GaN/WSe2 heterostructure for enhanced photocatalytic water splitting under visible spectrum

van der Waals heterostructures are widely used in the field of photocatalysis due to the fact that their properties can be regulated via an external electric field, strain engineering, interface rotation, alloying, doping, etc. to promote the capacity of discrete photogenerated carriers. Herein, we fabricated an innovative heterostructure by piling monolayer GaN on isolated WSe₂. Subsequently, a first principles calculation based on density functional theory was performed to verify the two-dimensional GaN/WSe₂ heterostructure and explore its interface stability, electronic property, carrier mobility and photocatalytic performance. The results demonstrated that the GaN/WSe₂ heterostructure has a direct Z-type band arrangement and possesses a bandgap of 1.66 eV. The built-in electric field is caused by the transfer of positive charge between the WSe₂ layers to the GaN layer, directly leading to the segregation of photogenerated electron-hole pairs. The GaN/WSe₂ heterostructure has high carrier mobility, which is conducive to the transmission of photogenerated carriers. Furthermore, the Gibbs free energy changes to a negative value and declines continuously during the water splitting reaction into oxygen without supplementary overpotential in a neural environment, satisfying the thermodynamic demands of water splitting. These findings verify the enhanced photocatalytic water splitting under visible light and can be used as the theoretical basis for the practical application of GaN/WSe₂ heterostructures.

A facile strategy of using MoS2 quantum dots for fluorescence-based targeted detection of nitrobenzene

We present a simple approach for producing photoluminescent MoS₂ quantum dots (QDs) using commercial MoS₂ powder as a precursor along with NaOH and isopropanol. The synthesis method is particularly easy and environmentally friendly. The successful intercalation of Na⁺ ions into MoS₂ layers and subsequent oxidative cutting reaction leads to the formation of luminescent MoS₂ QDs. The present work, for the first time, shows the formation of MoS₂ QDs without any additional energy source. The as-synthesized MoS₂ QDs were characterized using microscopy and spectroscopy. The QDs have a few layer thicknesses and a narrow size distribution with an average diameter of ∼3.8 nm. Nitrobenzene (NB), an industrial chemical, is both toxic to human health and dangerously explosive. The present MoS₂ QDs can be used as an effective photoluminescent probe, and a new turn-off sensor for NB detection. The selective quenching was operated via multiple mechanisms; electron transfer between the nitro group and MoS₂ QDs through dynamic quenching and the primary inner filter effect (IFE). The quenching has a linear relationship with NB concentrations from 0.5 μM to 11 μM, with a calculated detection limit of 50 nM.

Charge Transport Dynamics of Quasi-Type II Perovskite Janus Nanocrystals in High-Performance Photoconductors

CsPbBr₃-Pb₄S₃Br₂ Janus nanocrystals (NCs) are the only nanomaterial where the epitaxial structure of perovskite and chalcogenide materials has been realized at the nanoscale, but their exciton dynamics mechanism has not yet been thoroughly investigated or applied in photodetection applications. This work reports an attractive device performance of perovskite photoconductors based on epitaxial CsPbBr₃-Pb₄S₃Br₂ Janus NCs, as well as the carrier relaxation and transfer mechanism of the heterojunction. By a combination of transient optical absorption and quantum dynamics simulation, it is demonstrated that the photogenerated holes on CsPbBr₃ can be successfully extracted by Pb₄S₃Br₂, while the hole transfer proceeds about three times faster than energy loss and remains "hot" for about 300 fs. This feature has favorable effects on long-range charge separation and transport; therefore, the Janus NCs photoconductors exhibit an exceptional responsivity of 34.0 A W^-1 and specific detectivity of 1.26 × 10¹⁴ Jones.

Electronic structures and photovoltaic applications of vdW heterostructures based on Janus group-IV monochalcogenides: insights from first-principles calculations

The van der Waals integration can help 2D materials modulate their properties and provide more opportunities for 2D materials in the next-generation high-performance optoelectronic devices. Using first-principles calculations, we explored the atomic and electronic structures of 2D pristine and Janus group-IV monochalcogenides and found the internal vertical electric field at Janus group-IV monochalcogenides. Then, we constructed vdW heterostructures with pristine and Janus group-IV monochalcogenides monolayers as building blocks and explored their atomic structures and band alignments. Our results demonstrate that these vdW heterostructures can be synthesized experimentally, and the surface termination of the Janus monolayer at the interface can significantly help the heterostructure realize the transition from type I to type II due to the intrinsic electric field. Moreover, we found eight vdW heterostructures with a mismatch of less than 5% exhibiting type II band alignment with charge densities of VBM and CBM mainly localized at different domains of heterostructures, and excellent power conversion efficiency (∼19%) in photovoltaics are also predicted for these heterostructures with type II band alignment. Our results not only give an idea to use the Janus monolayer as building blocks to construct vdW heterostructures and modulate their band alignment but also provide a guide to the experimental researcher to design more efficient photovoltaic devices with Janus group-IV monochalcogenides.

2D MoS2/BiOBr van der Waals heterojunctions by liquid-phase exfoliation as photoelectrocatalysts for hydrogen evolution

As a semiconductor used for the photocatalytic hydrogen evolution reaction (HER), BiOBr has received intensive attention in recent years. However, the high recombination of photoexcited charge carriers results in poor photocatalytic efficiency. The combination with other photoactive semiconductors might represent a valuable approach to deal with the intrinsic limitations of the material. Given that BiOBr has a 2D structure, we propose a simple liquid-phase exfoliation method to peel BiOBr microspheres into few-layer nanosheets. By tuning the weight ratio between the precursors, we prepare a series of 2D MoS₂/BiOBr van der Waals (vdW) heterojunctions and study their behaviour as (photo)electrocatalysts for the HER, finding dramatic differences as a function of weight composition. Moreover, we found that pristine 2D BiOBr and the heterojunctions, with the exception of the 1% MoS₂/BiOBr composition, undergo photocorrosion, with BiOBr being reduced to metallic Bi. These findings provide useful guidelines to design novel 2D material-based (photo)electrocatalysts for the production of sustainable fuels.

In-Plane Strain Tuned Electronic and Optical Properties in Germanene-MoSSe Heterostructures

DFT calculations are performed to investigate the electronic and optical absorption properties of two-dimensional heterostructures constructed by Janus MoSSe and germanene. It is found that a tiny gap can be opened up at the Dirac point in both Ge/SMoSe and Ge/SeMoS heterostructures, with intrinsic high-speed carrier mobility of the germanene layer being well preserved. An n-type Schottky contact is formed in Ge/SMoSe, while a p-type one is formed in Ge/SeMoS. Compared to corresponding individual layers, germanene-MoSSe heterostructures can exhibit extended optical absorption ability, ranging from ultraviolet to infrared light regions. The position of the Dirac cone, the Dirac gap value as well as the position of the optical absorption peak for both Ge/SMoSe and Ge/SeMoS heterostructures can be tuned by in-plane biaxial strains. It is also predicted that a Schottky-Ohmic transition can occur when suitable in-plane strain is imposed (especially tensile strain) on heterostructures. These results can provide a helpful guide for designing future nanoscale optoelectronic devices based on germanene-MoSSe vdW heterostructures.

Interfacial Coupling and Modulation of van der Waals Heterostructures for Nanodevices

In recent years, van der Waals heterostructures (vdWHs) of two-dimensional (2D) materials have attracted extensive research interest. By stacking various 2D materials together to form vdWHs, it is interesting to see that new and fascinating properties are formed beyond single 2D materials; thus, 2D heterostructures-based nanodevices, especially for potential optoelectronic applications, were successfully constructed in the past few decades. With the dramatically increased demand for well-controlled heterostructures for nanodevices with desired performance in recent years, various interfacial modulation methods have been carried out to regulate the interfacial coupling of such heterostructures. Here, the research progress in the study of interfacial coupling of vdWHs (investigated by Photoluminescence, Raman, and Pump-probe spectroscopies as well as other techniques), the modulation of interfacial coupling by applying various external fields (including electrical, optical, mechanical fields), as well as the related applications for future electrics and optoelectronics, have been briefly reviewed. By summarizing the recent progress, discussing the recent advances, and looking forward to future trends and existing challenges, this review is aimed at providing an overall picture of the importance of interfacial modulation in vdWHs for possible strategies to optimize the device's performance.

A first principles study of a van der Waals heterostructure based on MS2 (M = Mo, W) and Janus CrSSe monolayers

The strategy of stacking two-dimensional materials for designing van der Waals heterostructures has gained tremendous attention in realizing innovative device applications in optoelectronics and renewable energy sources. Here, we performed the first principles calculations of the geometry, optoelectronic and photocatalytic performance of MS₂-CrSSe (M = Mo, W) vdW heterostructures. The mirror asymmetry in the Janus CrSSe system allows the designing of two models of the MS₂-CrSSe system by replacing S/Se atoms at opposite surfaces in CrSSe. The feasible configurations of both models of the MS₂-CrSSe system are found energetically, dynamically and thermally stable. The studied heterobilayers possess an indirect type-I band alignment, indicating that the recombination of photogenerated electrons and holes in the CrSSe monolayer is hence crucial for photodetectors and laser applications. Remarkably, a red-shift in the optical absorption spectra of MS₂-CrSSe makes them potential candidates for light harvesting applications. More interestingly, all heterobilayers (except W(Mo)S₂-CrSSe of model-I(II)) reveal appropriate band edge positions of the oxidation and reduction potentials of the photocatalysis of water dissociation into H⁺/H₂ and O₂/H₂O at pH = 0. These results shed light on the practical design of the MS₂-CrSSe system for efficient optoelectronic and photocatalytic water splitting applications.

Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures

Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.

van der Waals Semiconductor Empowered Vertical Color Sensor

Biomimetic artificial vision is receiving significant attention nowadays, particularly for the development of neuromorphic electronic devices, artificial intelligence, and microrobotics. Nevertheless, color recognition, the most critical vision function, is missed in the current research due to the difficulty of downscaling of the prevailing color sensing devices. Conventional color sensors typically adopt a lateral color sensing channel layout and consume a large amount of physical space, whereas compact designs suffer from an unsatisfactory color detection accuracy. In this work, we report a van der Waals semiconductor-empowered vertical color sensing structure with the emphasis on compact device profile and precise color recognition capability. More attractive, we endow color sensor hardware with the function of chromatic aberration correction, which can simplify the design of an optical lens system and, in turn, further downscales the artificial vision systems. Also, the dimension of a multiple pixel prototype device in our study confirms the scalability and practical potentials of our developed device architecture toward the above applications.

Two-layer silicene on the SiC substrate: lithiation investigation in the molecular dynamics experiment

The functioning of the lithium ion battery anode composed of silicene/SiC composite is studied by the method of molecular dynamics. In this composite, silicene has vacancy defects of different sizes. Approximately the same degree of filling of such an anode with lithium is shown for both horizontal and vertical intercalations. However, during the horizontal intercalation as opposed to vertical one, lithium atoms not only fill the channel and deposit on its walls, but also penetrate into the substrate. In both cases, the self-diffusion coefficients of lithium atoms have similar values. However, the process of filling the system with lithium occurs with a smoother change in the total energy, when the intercalation is performed vertically. A detailed study of the lithium atoms packing via the construction of Voronoi polyhedra for each of the systems under consideration shows the better uniformity of the Li atoms distribution over the volume of the system during the vertical intercalation.

High-throughput inverse design and Bayesian optimization of functionalities: spin splitting in two-dimensional compounds

The development of spintronic devices demands the existence of materials with some kind of spin splitting (SS). In this Data Descriptor, we build a database of ab initio calculated SS in 2D materials. More than that, we propose a workflow for materials design integrating an inverse design approach and a Bayesian inference optimization. We use the prediction of SS prototypes for spintronic applications as an illustrative example of the proposed workflow. The prediction process starts with the establishment of the design principles (the physical mechanism behind the target properties), that are used as filters for materials screening, and followed by density functional theory (DFT) calculations. Applying this process to the C2DB database, we identify and classify 358 2D materials according to SS type at the valence and/or conduction bands. The Bayesian optimization captures trends that are used for the rationalized design of 2D materials with the ideal conditions of band gap and SS for potential spintronics applications. Our workflow can be applied to any other material property.

Measurement(s)	Spin polarized and spin-orbit coupling band structures • Spin-splitting type at the valence and/or conduction bands
Technology Type(s)	Density functional theory • Bayesian optimization and High-throughput calculations
Factor Type(s)	Atomic composition and stoichiometry of two-dimensional compounds • Crystalline structure of two-dimensional compounds

The electronic and optical properties of III–V binary 2D semiconductors: how to achieve high precision from accurate many-body methods

We tested the precision of accurate many-body GW and BSE methods on seven hexagonal 2D III–V binary semiconductors (BN, BP, BAs, AlN, GaN, GaP, and GaAs), and we provided benchmark electronic and optical properties.

Spin-crossover nanoparticles anchored on MoS2 layers for heterostructures with tunable strain driven by thermal or light-induced spin switching

In the past few years, the effect of strain on the optical and electronic properties of MoS₂ layers has attracted particular attention as it can improve the performance of optoelectronic and spintronic devices. Although several approaches have been explored, strain is typically externally applied on the two-dimensional material. In this work, we describe the preparation of a reversible 'self-strainable' system in which the strain is generated at the molecular level by one component of a MoS₂-based composite material. Spin-crossover nanoparticles were covalently grafted onto functionalized layers of semiconducting MoS₂ to form a hybrid heterostructure. Their ability to switch between two spin states on applying an external stimulus (light irradiation or temperature change) serves to generate strain over the MoS₂ layer. A volume change accompanies this spin crossover, and the created strain induces a substantial and reversible change of the electrical and optical properties of the heterostructure.

2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives

Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.

Realization of Large Scale, 2D van der Waals Heterojunction of SnS2 /SnS by Reversible Sulfurization

2D van der Waals heterojunction provides an attractive opportunity for realizing novel electronic or optoelectronic devices. It remains challenging to realize high-quality heterostructures through scalable methods such as molecular epitaxy growth (MBE). Here, growth of few-layer SnS thin films is reported on mica and Nb-doped SrTiO₃ (100) substrates by MBE. Then the top layer of SnS film is uniformly sulfurized to monolayer SnS₂ in a sulfur atmosphere, resulting in a high-quality SnS₂ /SnS 2D heterojunction. Furthermore, the SnS₂ layer can be recovered to SnS by annealing SnS₂ /SnS without sulfur supply, indicating the heterojunction formation is reversible. The scanning tunneling spectroscopy measurements on SnS₂ /SnS heterostructure indicate the type-II band alignment in SnS₂ /SnS. The work provides a promising approach to construct artificial 2D heterojunctions with desired properties, which could be extended to other sulfide and selenide systems.

Recent Progress in LDH@Graphene and Analogous Heterostructures for Highly Active and Stable Photocatalytic and Photoelectrochemical Water Splitting

Photocatalytic (PC) and photoelectrochemical (PEC) water splitting is a plethora of green technological process, which transforms copiously available photon energy into valuable chemical energy. With the augmentation of modern civilization, developmental process of novel semiconductor photocatalysts proceeded at a sweltering rate, but the overall energy conversion efficiency of semiconductor photocatalysts in PC/PEC is moderately poor owing to the instability ariseing from the photocorrosion and messy charge configuration. Particularly, layered double hydroxides (LDHs) as reassuring multifunctional photocatalysts, turned out to be intensively investigated owing to the lamellar structure and exceptional physico-chemical properties. However, major drawbacks of LDHs material are its low conductivity, sluggish mass transfer and structural instability in acidic media, which hinder their applicability and stability. To surmount these obstacles, the formation of LDH@graphene and analogus heterostructures could proficiently amalgamate multi-functionalities, compensate distinct shortcomings, and endow novel properties, which ensure effective charge separation to result in stability and superior catalytic activities. Herein, we aim to summarize the currently updated synthetic strategies used to design heterostructures of 2D LDHs with 2D/3D graphene and graphene analogus material as graphitic carbon nitride (g-C₃ N₄ ), and MoS₂ as mediator, or interlayer support, or co-catalyst or vice versa for superior PC/PEC water splitting activities along with long-term stabilities. Furthermore, latest characterization technique measuring the stability along with variant interface mode for imparting charge separation in LDH@graphene and graphene analogus heterostructure has been identified in this field of research with understanding the intrinsic structural features and activities.

Two-dimensional WS2/MoS2 heterostructures: properties and applications

The successful fabrication of WS₂/MoS₂ heterostructures provides more possibilities for optoelectronic and thermoelectric applications than graphene because of their direct bandgap characteristics; therefore, scientific investigations on WS₂/MoS₂ heterostructures are more significant and thriving. In this paper, we review the latest research progress in WS₂/MoS₂ heterostructures, and look forward to their properties and applications. Firstly, we analyze the crystal structure and electronic structure of WS₂, MoS₂, and their heterostructures. Secondly, we comprehensively present the widely used methods for preparing heterostructures. Finally, based on the unique physical characteristics of WS₂/MoS₂ heterostructures, we focus on their properties and applications in mechanics, electronics, optoelectronics, and thermoelectronics.

Characterization of the mechanical properties of van der Waals heterostructures of stanene adsorbed on graphene, hexagonal boron-nitride and silicon carbide

Stanene has revealed a new horizon in the field of quantum condensed matter and energy conversion devices but its significantly lower tensile strength limits its further applications and effective operation in these nanodevices. Van der Waals heterostructures have given substantial flexibility to integrate different two-dimensional (2D) layered materials over the past few years and have proven highly functional with exceptional features, appealing applications, and innovative physics. Considerable efforts have been made for the preparation, thorough understanding, and applications of van der Waals heterostructures in the fields of electronics and optoelectronics. In this paper, we have executed Molecular Dynamics (MD) simulations to predict the tensile strength of van der Waals heterostructures of stanene (Sn) adsorbed on graphene (Gr), hexagonal boron nitride (hBN), and silicon carbide (SiC) (Sn/Gr, Sn/hBN, and Sn/SiC, respectively) subjected to both armchair and zigzag directional loading at different strain rates for the first time, which has enticing applications in electronic, optoelectronic, energy storage and bio-engineered devices. Among all the van der Waals heterostructures, the Sn/SiC heterostructure exhibits the lowest tensile strength and tensile strain. Furthermore, it has been found that zigzag directional loading could endure more tensile strain before fracture. Besides, it has been disclosed that though the rule of mixtures may accurately reproduce the Young's modulus of these heterostructures, it has limitations to predict the tensile strength. Fracture analysis suggests that for the Sn/hBN heterostructure the fracture initiates from the stanene layer while for the Sn/Gr and Sn/SiC heterostructures the fracture initiates from the Gr and SiC layer, respectively, for both armchair and zigzag directional loading. Overall, this study would aid in the design and efficient operation of Sn/Gr, Sn/hBN, and Sn/SiC heterostructures when subjected to mechanical force.

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Semiconducting piezoelectric α-In₂Se₃ and 3R MoS₂ have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In₂Se₃ and 3R MoS₂ flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In₂Se₃/3R MoS₂ vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 10³ A W^-1 and a substantial specific detectivity of 6.2 × 10¹⁰ Jones under a compressive strain of - 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In₂Se₃/3R MoS₂ photoelectric response through an appropriate mechanical stimulus.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Effects of dielectric screening on the excitonic and critical points properties of WS2/MoS2 heterostructures

Vertical van der Waals heterostructures have aroused great attention for their promising application in next-generation nanoelectronic and optoelectronic devices. The dielectric screening effect plays a key role in the properties of two-dimensional (2D) heterostructures. Here, we studied the dielectric screening effects on the excitonic properties and critical points (CPs) of the WS2/MoS2 heterostructure using spectroscopic ellipsometry (SE). Owing to the type-II band alignment of the WS2/MoS2 heterostructure, charged carriers spatially separated and created an interlayer exciton, and the transition energy and binding energy have been accurately found to be 1.58 ± 0.050 eV and 431.39 ± 127.818 meV by SE, respectively. We found that stacking the WS2/MoS2 vertical heterostructure increases the effective dielectric screening compared with the monolayer counterparts. The increased effective dielectric screening in the WS2/MoS2 heterostructure weakens the long-range Coulomb force between electrons and holes. Consequently, the quasi-particle band gap and the exciton binding energies are reduced, and because of the orbital overlap, more CPs are produced in the WS2/MoS2 heterostructure in the high photon energy range. Our results not only shed light on the interpretation of recent first-principles studies, but also provide important physical support for improving the performance of heterostructure-based optoelectronic devices with tunable functionalities.

Optoelectronic and photocatalytic applications of hBP-XMY (M = Mo, W; (X ≠ Y) = S, Se, Te) van der Waals heterostructures

Stacking of layers via weak van der Waals interactions is an important technique for tuning the physical properties and designing viable electronic products. Using first-principles calculations, the geometry, electronic structure, and optical and photocatalytic performance of novel vdW heterostructures based on hexagonal boron phosphide (hBP) and Janus (XMY (M = Mo, W; (X ≠ Y) = S, Se, Te)) monolayers are investigated. Favorable (dynamically and energetically) stacking patterns of two different models of hBP-XMY heterostructures are presented with an alternative order of chalcogen atoms at opposite surfaces in SMSe. A direct type-II band alignment is obtained in both models of hBP-SMoSe, hBP-SWSe and hBP-SeWTe, while the rest are type-II indirect bandgap semiconductors. The Bader charge, and planer-averaged and plane-averaged charge density differences are investigated, which show that hBP donates electrons to the SMoSe and SWSe layer in the hBP-SMoSe and hBP-SWSe vdW heterostructure, while in the case of the hBP-SMoTe (hBP-SWTe) and hBP-SeMoTe (hBP-SeWTe) vdW heterostructures, the transfer of electrons is observed from SMoTe (SWTe) and SeMoTe (SeWTe) to hBP. The imaginary part of the dielectric function shows that the lowest energy transitions are dominated by excitons with a systematic red shift for heavier chalcogen atoms. Furthermore, the photocatalytic performance indicates that the hBP-XMY (M = Mo, W; (X ≠ Y) = S, Se, Te) vdW heterostructures in model-I are suitable for water splitting at pH = 0.

Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.

Carrier polarity modulation of molybdenum ditelluride (MoTe2) for phototransistor and switching photodiode applications

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are layered semiconductor materials that have recently emerged as promising candidates for advanced nano- and photoelectronic applications. Previously, various doping methods, such as surface functionalization, chemical doping, substitutional doping, surface charge transfer, and electrostatic doping, have been introduced, but they are not stable or efficient. In this study, we have developed carrier polarity modulation of molybdenum ditelluride (MoTe₂) for the development of phototransistors and switching photodiodes. Initially, we treated p-MoTe₂ in a N₂ environment under DUV irradiation and found that the p-type MoTe₂ changed to n-type MoTe₂. However, the treated devices exhibited environmental stability over a long period of 60 days. Kelvin probe force microscopy (KPFM) measurements demonstrated that the values of the work function for p-MoTe₂ and n-MoTe₂ were ∼4.90 and ∼4.49 eV, respectively, which confirmed the carrier tunability. Also, first-principles studies were performed to confirm the n-type carrier polarity variation. Interestingly, the n-type MoTe₂ reversed its polarity to p-type after the irradiation of the devices under DUV in an O₂ environment. Additionally, a lateral homojunction-based p-n diode of MoTe₂ with a rectification ratio of ∼2.5 × 10⁴ was formed with the value of contact potential difference of ∼400 mV and an estimated fast rise time of 29 ms and decay time of 38 ms. Furthermore, a well self-biased photovoltaic behavior upon illumination of light was achieved and various photovoltaic parameters were examined. Also, V_OC switching behavior was established at the p-n diode state by switching on and off the incident light. We believe that this efficient and facile carrier polarity modulation technique may pave the way for the development of phototransistors and switching photodiodes in advanced nanotechnology.

Stimuli-Enabled Artificial Synapses for Neuromorphic Perception: Progress and Perspectives

Brain-inspired neuromorphic computing is intended to provide effective emulation of the functionality of the human brain via the integration of electronic components. Recent studies of synaptic plasticity, which represents one of the most significant neurochemical bases of learning and memory, have enhanced the general comprehension of how the brain functions and have thereby eased the development of artificial neuromorphic devices. An understanding of the synaptic plasticity induced by various types of stimuli is essential for neuromorphic system construction. The realization of multiple stimuli-enabled synapses will be important for future neuromorphic computing applications. In this Review, state-of-the-art synaptic devices with particular emphasis on their synaptic behaviors under excitation by a variety of external stimuli are summarized, including electric fields, light, magnetic fields, pressure, and temperature. The switching mechanisms of these synaptic devices are discussed in detail, including ion migration, electron/hole transfer, phase transition, redox-based resistive switching, and other mechanisms. This Review aims to provide a comprehensive understanding of the operating mechanisms of artificial synapses and thus provides the principles required for design of multifunctional neuromorphic systems with parallel processing capabilities.

Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 10⁴ A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe₂ and MoS₂ materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.

Efficient day-night photocatalysis performance of 2D/2D Ti3C2/Porous g-C3N4 nanolayers composite and its application in the degradation of organic pollutants

It is hindered by the limited light time that the development of photocatalysis technology, which is a clean and energy-saving advanced oxidation process. In this work, a 2D/2D Ti₃C₂/porous g-C₃N₄ nanolayers composited van der Waals (VDW) heterostructure photocatalyst (Ti₃C₂/PCN) was prepared by a straightforward vacuum filtration method after an ultrasonic stripping process. In this Ti₃C₂/PCN composite photocatalyst, PCN nanolayers play the role of absorbing visible light, while Ti₃C₂ nanolayers form VDW heterojunction with PCN nanolayers, which is beneficial to migration of photo-generated electrons from PCN to Ti₃C₂. The band structure match of Ti₃C₂/PCN and the build-in electric field from the VDW heterojunction both favor the effective separation and migration of photo-induced charge carriers that is why the Ti₃C₂/PCN composite shows good day-photocatalytic capability with 98% phenol removal efficiency. Besides, as a good electronic storage material, the Ti₃C₂ can store excess photo-generated electrons under light irradiation and release them when exposed to electron acceptors in the dark condition. Therefore, the night-photocatalysis can work out even without sunlight, in which 32% phenol was decomposed. In addition, the universality of Ti₃C₂/PCN day-night photocatalytic system is proved by the degradation of various organic pollutants. The design of this day-night photocatalyst can facilitate the application of photocatalytic reaction to actual environmental scenes, since it reduces the limitation imposed by the presence or absence of sunlight.

van der Waals Heterojunction between a Bottom-Up Grown Doped Graphene Quantum Dot and Graphene for Photoelectrochemical Water Splitting

van der Waals heterojunctions (vdWHs) formed between 2D materials have attracted tremendous attention recently due to their extraordinary properties, which cannot be offered by their individual components or other heterojunctions. Intriguing electronic coupling, lowered energy barrier, intimate charge transfer, and efficient exciton separation occurring at the atomically sharp interface promise their applications in catalysis, which, however, are largely unexplored. Herein, we demonstrate a 0D/2D vdWH between 0D graphene quantum dots (GQDs) and 2D pristine graphene sheets, simply prepared by ultrasonication of graphite powder using GQDs as intercalation surfactant. Such an all-carbon Schottky-diode-like 0D/2D vdWH is employed for the emerging photoelectrochemical catalysis (water splitting) with high performance. The demonstrated low-cost and scalable bottom-up growth of heteroatom-doped GQDs will greatly promote their widespread applications. Moreover, the mechanisms underlying GQD growth and heterojunction-mediated catalysis are revealed both experimentally and theoretically.

Tunable spin-polarized band gap in Si2/NiI2 vdW heterostructure

Using density functional theory (DFT) calculations we investigate the structural and electronic properties of a heterogeneous van der Waals (vdW) structure consisting of silicene and NiI₂ single layers. We observe an interaction between the two layers with a net charge transfer from the ferromagnetic semiconductor NiI₂ to silicene, breaking the inversion symmetry of the silicene structure. However, the charges flow in opposite directions for the two spin channels, which leads to a vdW heterostructure with a spin-polarized band gap between the π and π* states. The band gap can be tuned by controlling the vertical distance between the layers. The features shown by this vdW heterostructure are new, and we believe that silicene on a NiI₂ layer can be used to construct heterostructures which have appropriate properties to be used in nanodevices where control of the spin-dependent carrier mobility is necessary and can be incorporated into silicon based electronics.

Using density functional theory (DFT) calculations we investigate the structural and electronic properties of a heterogeneous van der Waals (vdW) structure consisting of silicene and NiI₂ single layers.

Two-dimensional layered Janus-In2SeTe/C2N van der Waals heterostructures for photocatalysis and photovoltaics: first-principles calculations

Through DFT calculations, Janus-In₂SeTe/C₂N heterostructures are found to have great potential applications in the fields of clean and sustainable energy.

Optical performance and growth mechanism of a 2D WS2–MoWS2 hybrid heterostructure fabricated by a one-step CVD strategy

A large-scale 2D WS₂-Mo_1−xW_xS₂ hybrid heterostructure can be realized by the reaction of S powder and sputtered Mo/W films through the chemical vapor deposition method.

Tailoring the growth and electronic structures of organic molecular thin films

In the rapidly developing electronics industry, it has become increasingly necessary to explore materials that are cheap, flexible and versatile which have led to significant research efforts towards organic molecular thin films. Organic molecules are unique compared to their inorganic atomic counterparts as their properties can be tuned drastically through chemical functionalization, offering versatility, though their extended shape and weak intermolecular interactions bring significant challenges to the control of both the growth and the electronic structures of molecular thin films. In this paper, we will review the self-assembly process and how to establish long-range ordered organic molecular thin films. We will also discuss how the electronic structures of thin films are impacted by the molecule's local electrostatic environment and its interaction with the substrate, within the context of controlling interfacial energy level alignment between organic semiconductors and electrodes in electronic devices.

PtTe2 -Based Type-II Dirac Semimetal and Its van der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection

Recent years have witnessed rapid progresses made in the photoelectric performance of two-dimensional materials represented by graphene, black phosphorus, and transition metal dichalcogenides. Despite significant efforts, a photodetection technique capable for longer wavelength, higher working temperature as well as fast responsivity, is still facing huge challenges due to a lack of best among bandgap, dark current, and absorption ability. Exploring topological materials with nontrivial band transport leads to peculiar properties of quantized phenomena such as chiral anomaly, and magnetic-optical effect, which enables a novel feasibility for an advanced optoelectronic device working at longer wavelength. In this work, the direct generation of photocurrent at low energy terahertz (THz) band at room temperature is implemented in a planar metal-PtTe₂ -metal structure. The results show that the THz photodetector based on PtTe₂ with bow-tie-type planar contacts possesses a high photoresponsivity (1.6 A W^-1 without bias voltage) with a response time less than 20 µs, while the PtTe₂ -graphene heterostructure-based detector can reach responsivity above 1.4 kV W^-1 and a response time shorter than 9 µs. Remarkably, it is already exploitable for large area imaging applications. These results suggest that topological semimetals such as PtTe₂ can be ideal materials for implementation in a high-performing photodetection system at THz band.

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector

Photodetectors based on graphene/GaAs heterostructure were fabricated and demonstrated for application in self-powered photodetection. Then, Si quantum dots (QDs) were spin-coated onto the surface of the devices to enhance the built-in field by photo-induced doping, because of the tunable Fermi level (E F) of graphene and shallow junction of the heterojunction. Additionally, Au nanoparticles working as a light trapping structure were used to the enhance quantum efficiency of the Si QDs and the optical absorption of the heterojunction, benefitting from localized surface plasmon resonance. Therefore, a large-area photodetector under self-powered conditions achieved a high performance i.e. responsivity (1.81 × 105 V W-1), detectivity (2.0 × 1012 Jones), fast response speed (<0.04 ms), and on-off ratio (6 × 103). The high voltage responsivity opens a promising pathway to ultra-weak light detection, and facilities the development of novel sensors.

Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications

Recent research and development is focused in an intensive manner to increase the efficiency of solar energy conversion into electrical energy via photovoltaics and photo-electrochemical reactions.

Recent Progress and Future Prospects of 2D-Based Photodetectors

Conventional semiconductors such as silicon- and indium gallium arsenide (InGaAs)-based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, nontransparency, nonflexibility, and complementary metal-oxide-semiconductor (CMOS) incompatibility. New emerging two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from the visible to far-infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light-detection capabilities. Notably the facile integration of 2D photodetectors on silicon photonics or CMOS platforms paves the way toward high-performance, low-cost, broadband sensing and imaging modalities.