1
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Tyson KH, Godfrey JR, Fraser JM, Knobel RG. Localized Gradual Photomediated Brightness and Lifetime Increase of Superacid-Treated Monolayer MoS 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:53186-53194. [PMID: 39312628 DOI: 10.1021/acsami.4c00836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
Monolayer semiconducting transition-metal dichalcogenides (S-TMDs) have been extensively studied as materials for next-generation optoelectronic devices due to their direct band gap and high exciton binding energy at room temperature. Under a superacid treatment of bis(trifluoromethane)sulfonimide (TFSI), sulfur-based TMDs such as MoS2 can emit strong photoluminescence (PL) with a photoluminescence quantum yield (PLQY) approaching unity. However, the magnitude of PL enhancement varies by more than 2 orders of magnitude in published reports. A major culprit behind the discrepancy is sulfur-based TMD's sensitivity to above-bandgap photostimulation. Here, we present a detailed study of how TFSI-treated MoS2 reacts to photostimulation with increasing PL occurring hours after continuous or pulsed laser exposure. The PL of TFSI-treated MoS2 is enhanced up to 74 times its initial intensity after 5 h of continuous exposure to 532 nm laser light. Photostimulation also enhances the PL of untreated MoS2 but with a much smaller enhancement. Caution should be taken when probing MoS2 PL spectra, as above-bandgap light can alter the resulting intensity and peak wavelength of the emission over time. The presence of air is verified to play a key role in the photostimulated enhancement effect. Additionally, the rise of PL intensity is mirrored by an increase in measured carrier lifetime of up to ∼400 ps, consistent with the suppression of nonradiative pathways. This work demonstrates why variations in PL intensity are observed across samples and provides an understanding of the changes in carrier lifetimes to better engineer next-generation optoelectronic devices.
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Affiliation(s)
- Kurt H Tyson
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - James R Godfrey
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - James M Fraser
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - Robert G Knobel
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
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2
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Zhai Y, Shi Z, Xia Q, Han W, Li W, Deng X, Zhang X. Lithiation: Advancing Material Synthesis and Structural Engineering for Emerging Applications. ACS NANO 2024; 18:26477-26502. [PMID: 39301666 DOI: 10.1021/acsnano.4c09114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/22/2024]
Abstract
Lithiation, a process of inserting lithium ions into a host material, is revolutionizing nanomaterials synthesis and structural engineering as well as enhancing their performance across emerging applications, particularly valuable for large-scale synthesis of high-quality low-dimensional nanomaterials. Through a systematic investigation of the synthetic strategies and structural changes induced by lithiation, this review aims to offer a comprehensive understanding of the development, potential, and challenges associated with this promising approach. First, the basic principles of lithiation/delithiation processes will be introduced. Then, the recent advancements in the lithiation-induced structure changes of nanomaterials, such as morphology tuning, phase transition, defect generation, etc., will be stressed, emphasizing the importance of lithiation in structural modulation of nanomaterials. With the tunable structures induced by the lithiation, the properties and performance in electrochemical, photochemical, electronic devices, bioapplications, etc. will be discussed, followed by outlining the current challenges and perspectives in this research area.
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Affiliation(s)
- Yanjie Zhai
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Zhenqi Shi
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Qing Xia
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Wenkai Han
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Weisong Li
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Xiaoran Deng
- Jiangsu Province Key Laboratory in Anesthesiology, School of Anesthesiology, Xuzhou Medical University, Jiangsu 221004, China
| | - Xiao Zhang
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
- Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
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3
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024; 124:10112-10191. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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4
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Roy S, Joseph A, Zhang X, Bhattacharyya S, Puthirath AB, Biswas A, Tiwary CS, Vajtai R, Ajayan PM. Engineered Two-Dimensional Transition Metal Dichalcogenides for Energy Conversion and Storage. Chem Rev 2024; 124:9376-9456. [PMID: 39042038 DOI: 10.1021/acs.chemrev.3c00937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Designing efficient and cost-effective materials is pivotal to solving the key scientific and technological challenges at the interface of energy, environment, and sustainability for achieving NetZero. Two-dimensional transition metal dichalcogenides (2D TMDs) represent a unique class of materials that have catered to a myriad of energy conversion and storage (ECS) applications. Their uniqueness arises from their ultra-thin nature, high fractions of atoms residing on surfaces, rich chemical compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple length scales. Specifically, the rich electronic/electrical, optical, and thermal properties of 2D TMDs have been widely exploited for electrochemical energy conversion (e.g., electrocatalytic water splitting), and storage (e.g., anodes in alkali ion batteries and supercapacitors), photocatalysis, photovoltaic devices, and thermoelectric applications. Furthermore, their properties and performances can be greatly boosted by judicious structural and chemical tuning through phase, size, composition, defect, dopant, topological, and heterostructure engineering. The challenge, however, is to design and control such engineering levers, optimally and specifically, to maximize performance outcomes for targeted applications. In this review we discuss, highlight, and provide insights on the significant advancements and ongoing research directions in the design and engineering approaches of 2D TMDs for improving their performance and potential in ECS applications.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Antony Joseph
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Abhijit Biswas
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Chandra Sekhar Tiwary
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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5
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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403176. [PMID: 39031754 PMCID: PMC11348073 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional MaterialsZhoukou Normal UniversityZhoukou466001China
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical MathematicsBeijing100190China
| | - Tanju Yildirim
- Faculty of Science and EngineeringSouthern Cross UniversityEast LismoreNSW2480Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
- Laboratory of Solid State MicrostructuresNanjing UniversityNanjing210093China
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6
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Chen J, Huang J, Zheng T, Yang M, Chen S, Ma J, Jian L, Pan Y, Zheng Z, Huo N, Gao W, Li J. 2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38231-38242. [PMID: 39001805 DOI: 10.1021/acsami.4c06028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
The attractive physical properties of two-dimensional (2D) semiconductors in group IVA-VIA have been fully revealed in recent years. Combining them with 2D ambipolar materials to construct van der Waals heterojunctions (vdWHs) can offer tremendous opportunities for designing multifunctional electronic and optoelectronic devices, such as logic switching circuits, half-wave rectifiers, and broad-spectrum photodetectors. Here, an optimized SnSe0.75S0.25 is grown to design a SnSe0.75S0.25/MoTe2 vdWH for logic operation and wide-spectrum photodetection. Benefiting from the excellent gate modulation under the appropriate sulfur substitution and type-II band alignment, the device exhibits reconfigurable antiambipolar and ambipolar transfer behaviors at positive and negative source-drain voltage (Vds), enabling stable XNOR logic operation. It also features a gate-modulated positive and negative rectifying behavior with rectification ratios of 265:1 and 1:196, confirming its potential as half-wave logic rectifiers. Besides, the device can respond from visible to infrared wavelength up to 1400 nm. Under 635 nm illumination, the maximum responsivity of 1.16 A/W and response time of 657/500 μs are achieved at the Vds of -2 V. Furthermore, due to the strong in-plane anisotropic structure of SnSe0.75S0.25-alloyed nanosheet and narrow bandgap of 2H-MoTe2, it shows a broadband polarization-sensitive function with impressive photocurrent anisotropic ratios of 15.6 (635 nm), 7.0 (808 nm), and 3.7 (1310 nm). The direction along the maximum photocurrent can be reconfigurable depending on the wavelengths. These results indicate that our designed alloyed SnSe0.75S0.25/MoTe2 vdWH has reconfigurable logic operation and broadband photodetection capabilities in 2D multifunctional integrated circuits.
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Affiliation(s)
- Jianru Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Shengdi Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingyi Ma
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Liang Jian
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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7
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Wei S, Xia X, Bi S, Hu S, Wu X, Hsu HY, Zou X, Huang K, Zhang DW, Sun Q, Bard AJ, Yu ET, Ji L. Metal-insulator-semiconductor photoelectrodes for enhanced photoelectrochemical water splitting. Chem Soc Rev 2024; 53:6860-6916. [PMID: 38833171 DOI: 10.1039/d3cs00820g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Photoelectrochemical (PEC) water splitting provides a scalable and integrated platform to harness renewable solar energy for green hydrogen production. The practical implementation of PEC systems hinges on addressing three critical challenges: enhancing energy conversion efficiency, ensuring long-term stability, and achieving economic viability. Metal-insulator-semiconductor (MIS) heterojunction photoelectrodes have gained significant attention over the last decade for their ability to efficiently segregate photogenerated carriers and mitigate corrosion-induced semiconductor degradation. This review discusses the structural composition and interfacial intricacies of MIS photoelectrodes tailored for PEC water splitting. The application of MIS heterostructures across various semiconductor light-absorbing layers, including traditional photovoltaic-grade semiconductors, metal oxides, and emerging materials, is presented first. Subsequently, this review elucidates the reaction mechanisms and respective merits of vacuum and non-vacuum deposition techniques in the fabrication of the insulator layers. In the context of the metal layers, this review extends beyond the conventional scope, not only by introducing metal-based cocatalysts, but also by exploring the latest advancements in molecular and single-atom catalysts integrated within MIS photoelectrodes. Furthermore, a systematic summary of carrier transfer mechanisms and interface design principles of MIS photoelectrodes is presented, which are pivotal for optimizing energy band alignment and enhancing solar-to-chemical conversion efficiency within the PEC system. Finally, this review explores innovative derivative configurations of MIS photoelectrodes, including back-illuminated MIS photoelectrodes, inverted MIS photoelectrodes, tandem MIS photoelectrodes, and monolithically integrated wireless MIS photoelectrodes. These novel architectures address the limitations of traditional MIS structures by effectively coupling different functional modules, minimizing optical and ohmic losses, and mitigating recombination losses.
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Affiliation(s)
- Shice Wei
- School of Microelectronics & Jiashan Fudan Institute, Fudan University, Shanghai 200433, China.
| | - Xuewen Xia
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
| | - Shuai Bi
- Department of Chemistry, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China
| | - Shen Hu
- School of Microelectronics & Jiashan Fudan Institute, Fudan University, Shanghai 200433, China.
| | - Xuefeng Wu
- School of Microelectronics & Jiashan Fudan Institute, Fudan University, Shanghai 200433, China.
| | - Hsien-Yi Hsu
- Department of Chemistry, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China
| | - Xingli Zou
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
| | - Kai Huang
- Department of Physics, Xiamen University, Xiamen 361005, China.
| | - David W Zhang
- School of Microelectronics & Jiashan Fudan Institute, Fudan University, Shanghai 200433, China.
| | - Qinqqing Sun
- School of Microelectronics & Jiashan Fudan Institute, Fudan University, Shanghai 200433, China.
| | - Allen J Bard
- Department of Chemistry, The University of Texas at Austin, Texas 78713, USA
| | - Edward T Yu
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78758, USA.
| | - Li Ji
- School of Microelectronics & Jiashan Fudan Institute, Fudan University, Shanghai 200433, China.
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Luo W, Song R, Whetten BG, Huang D, Cheng X, Belyanin A, Jiang T, Raschke MB. Nonlinear Nano-Imaging of Interlayer Coupling in 2D Graphene-Semiconductor Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307345. [PMID: 38279570 DOI: 10.1002/smll.202307345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 12/13/2023] [Indexed: 01/28/2024]
Abstract
The emergent electronic, spin, and other quantum properties of 2D heterostructures of graphene and transition metal dichalcogenides are controlled by the underlying interlayer coupling and associated charge and energy transfer dynamics. However, these processes are sensitive to interlayer distance and crystallographic orientation, which are in turn affected by defects, grain boundaries, or other nanoscale heterogeneities. This obfuscates the distinction between interlayer charge and energy transfer. Here, nanoscale imaging in coherent four-wave mixing (FWM) and incoherent two-photon photoluminescence (2PPL) is combined with a tip distance-dependent coupled rate equation model to resolve the underlying intra- and inter-layer dynamics while avoiding the influence of structural heterogeneities in mono- to multi-layer graphene/WSe2 heterostructures. With selective insertion of hBN spacer layers, it is shown that energy, as opposed to charge transfer, dominates the interlayer-coupled optical response. From the distinct nano-FWM and -2PPL tip-sample distance-dependent modification of interlayer and intralayer relaxation by tip-induced enhancement and quenching, an interlayer energy transfer time ofτ ET ≈ ( 0 . 35 - 0.15 + 0.65 ) $\tau _{\rm ET} \approx (0.35^{+0.65}_{-0.15})$ ps consistent with recent reports is derived. As a local probe technique, this approach highlights the ability to determine intrinsic sample properties even in the presence of large sample heterogeneity.
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Affiliation(s)
- Wenjin Luo
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Renkang Song
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Benjamin G Whetten
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Di Huang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Alexey Belyanin
- Department of Physics and Astronomy, Texas A&M University, College Station, TX, 77843, USA
| | - Tao Jiang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Markus B Raschke
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
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9
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Shen X, Lin X, Peng Y, Zhang Y, Long F, Han Q, Wang Y, Han L. Two-Dimensional Materials for Highly Efficient and Stable Perovskite Solar Cells. NANO-MICRO LETTERS 2024; 16:201. [PMID: 38782775 PMCID: PMC11116351 DOI: 10.1007/s40820-024-01417-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Accepted: 04/11/2024] [Indexed: 05/25/2024]
Abstract
Perovskite solar cells (PSCs) offer low costs and high power conversion efficiency. However, the lack of long-term stability, primarily stemming from the interfacial defects and the susceptible metal electrodes, hinders their practical application. In the past few years, two-dimensional (2D) materials (e.g., graphene and its derivatives, transitional metal dichalcogenides, MXenes, and black phosphorus) have been identified as a promising solution to solving these problems because of their dangling bond-free surfaces, layer-dependent electronic band structures, tunable functional groups, and inherent compactness. Here, recent progress of 2D material toward efficient and stable PSCs is summarized, including its role as both interface materials and electrodes. We discuss their beneficial effects on perovskite growth, energy level alignment, defect passivation, as well as blocking external stimulus. In particular, the unique properties of 2D materials to form van der Waals heterojunction at the bottom interface are emphasized. Finally, perspectives on the further development of PSCs using 2D materials are provided, such as designing high-quality van der Waals heterojunction, enhancing the uniformity and coverage of 2D nanosheets, and developing new 2D materials-based electrodes.
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Affiliation(s)
- Xiangqian Shen
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Xuesong Lin
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yong Peng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, People's Republic of China
| | - Yiqiang Zhang
- College of Chemistry, Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Fei Long
- Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, School of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, People's Republic of China
| | - Qifeng Han
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yanbo Wang
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
| | - Liyuan Han
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
- Special Division of Environmental and Energy Science, College of Arts and Sciences, Komaba Organization for Educational Excellence, University of Tokyo, Tokyo, 153-8902, Japan.
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10
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Mearaj T, Farooq A, Hafiz AK, Khanuja M, Zargar RA, Bhat AA. Hydrothermal Synthesis and Characterization of WSe 2 Nanosheets: A Promising Approach for Wearable Photodetector Applications. ACS APPLIED BIO MATERIALS 2024; 7:3483-3495. [PMID: 38685505 DOI: 10.1021/acsabm.4c00384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
The two-dimensional (2D) WSe2 nanostructure was successfully synthesized via the hydrothermal method and subjected to comprehensive characterization using various spectroscopic techniques. X-ray diffraction (XRD) analysis confirmed the formation of nanosheets with a hexagonal crystal structure having a space symmetry of P63/mmc. Scanning electron microscopy (SEM) images showed irregular and nonuniform morphology. The size of the 2D nanosheets was determined using transmission electron microscopy (TEM) providing insights intotheir physical characteristics. The optical spectrum analysis yielded a discernible band gap value of 2.1 eV, as determined by the Tauc equation. Photoluminescence (PL) spectra display an emission at a wavelength of 610 nm, showing a broad emission associated with self-trapped excitons. Under excitation at λexc = 360 nm, PL emission spectra displayed a distinct peak at 610 nm, demonstrating the ability of the nanostructure to emit vivid red light. Photometric analysis underscored the potential of this nanostructure as a prominent red-light source for diverse display applications. The optimized photodetection performance of a device showcases a photoresponsivity of approximately 1.25 × 10-3 AW-1 and a detectivity of around 5.19 × 108 Jones at a wavelength of 390 nm. Additionally, the quantum efficiency is reported to be approximately 6.99 × 10-3 at a wavelength of 635 nm. These findings highlight the capability of the device for efficient photoconversion at specified wavelengths, indicating potential applications in sensing, imaging, and optical communication. The combination of structural, morphological, and optical characterizations highlights the suitability of 2D WSe2 nanostructure for practical optoelectronic applications, particularly in display technologies.
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Affiliation(s)
- Tuiba Mearaj
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025, India
| | - Aaliyah Farooq
- Department of Chemistry, Jamia Millia Islamia, New Delhi 110025, India
| | | | - Manika Khanuja
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025, India
| | - Rayees Ahmad Zargar
- Department of Physics, Baba Ghulam Shah Badshah University, Rajouri (J&K) 185234, India
| | - Aadil Ahmad Bhat
- Department of Chemical Engineering, Konkuk University, Seoul 05029, South Korea
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11
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Thomas JC, Chen W, Xiong Y, Barker BA, Zhou J, Chen W, Rossi A, Kelly N, Yu Z, Zhou D, Kumari S, Barnard ES, Robinson JA, Terrones M, Schwartzberg A, Ogletree DF, Rotenberg E, Noack MM, Griffin S, Raja A, Strubbe DA, Rignanese GM, Weber-Bargioni A, Hautier G. A substitutional quantum defect in WS 2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation. Nat Commun 2024; 15:3556. [PMID: 38670956 DOI: 10.1038/s41467-024-47876-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 04/15/2024] [Indexed: 04/28/2024] Open
Abstract
Point defects in two-dimensional materials are of key interest for quantum information science. However, the parameter space of possible defects is immense, making the identification of high-performance quantum defects very challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS2, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (CoS 0 ) and fabricate it with scanning tunneling microscopy (STM). The CoS 0 electronic structure measured by STM agrees with first principles and showcases an attractive quantum defect. Our work shows how HT computational screening and nanoscale synthesis routes can be combined to design promising quantum defects.
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Affiliation(s)
- John C Thomas
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA.
| | - Wei Chen
- Institute of Condensed Matter and Nanoscicence, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
| | - Yihuang Xiong
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Bradford A Barker
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Junze Zhou
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Weiru Chen
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Antonio Rossi
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Nolan Kelly
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Shalini Kumari
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Edward S Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Adam Schwartzberg
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - D Frank Ogletree
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Marcus M Noack
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Sinéad Griffin
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Archana Raja
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - David A Strubbe
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Gian-Marco Rignanese
- Institute of Condensed Matter and Nanoscicence, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
| | - Alexander Weber-Bargioni
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA.
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12
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Fickert M, Martinez-Haya R, Ruiz AM, Baldoví JJ, Abellán G. Exploring the effect of the covalent functionalization in graphene-antimonene heterostructures. RSC Adv 2024; 14:13758-13768. [PMID: 38681835 PMCID: PMC11046379 DOI: 10.1039/d4ra01029a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 03/24/2024] [Indexed: 05/01/2024] Open
Abstract
The growing field of two-dimensional (2D) materials has recently witnessed the emergence of heterostructures, however those combining monoelemental layered materials remain relatively unexplored. In this study, we present the chemical fabrication and characterization of a heterostructure formed by graphene and hexagonal antimonene. The interaction between these 2D materials is thoroughly examined through Raman spectroscopy and first-principles calculations, revealing that this can be considered as a van der Waals heterostructure. Furthermore, we have explored the influence of the antimonene 2D material on the reactivity of graphene by studying the laser-induced covalent functionalization of the graphene surface. Our findings indicate distinct degrees of functionalization based on the underlying material, SiO2 being more reactive than antimonene, opening the door for the development of controlled patterning in devices based on these heterostructures. This covalent functionalization implies a high control over the chemical information that can be stored but also removed on graphene surfaces, and its use as a patterned heterostructure based on antimonene and graphene. This research provides valuable insights into the antimonene-graphene interactions and their impact on the chemical reactivity during graphene covalent functionalization.
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Affiliation(s)
- M Fickert
- Department of Chemistry and Pharmacy, Joint Institute of Advanced Materials and Processes (ZMP), Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) Fürth 90762 Germany
| | - R Martinez-Haya
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - A M Ruiz
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - J J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - G Abellán
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
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13
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Meneghini G, Brem S, Malic E. Excitonic Thermalization Bottleneck in Twisted TMD Heterostructures. NANO LETTERS 2024; 24:4505-4511. [PMID: 38578047 DOI: 10.1021/acs.nanolett.4c00450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/06/2024]
Abstract
Twisted van der Waals heterostructures show intriguing interface exciton physics, including hybridization effects and emergence of moiré potentials. Recent experiments have revealed that moiré-trapped excitons exhibit remarkable dynamics, where excited states show lifetimes that are several orders of magnitude longer than in monolayers. The origin of this behavior is still under debate. Based on a microscopic many-particle approach, we investigate the phonon-driven relaxation cascade of nonequilibrium moiré excitons in the exemplary MoSe2-WSe2 heterostructure. We track exciton relaxation pathways across different moiré mini-bands and identify the phonon-scattering channels assisting the spatial redistribution of excitons into low-energy pockets of the moiré potential. We unravel a phonon bottleneck in the flat band structure at low twist angles preventing excitons from fully thermalizing into the lowest state, explaining the measured enhanced emission intensity and lifetime of excited moiré excitons. Overall, our work provides important insights into exciton relaxation dynamics in flat-band exciton materials.
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Affiliation(s)
- Giuseppe Meneghini
- Department of Physics, Philipps University of Marburg, 35037 Marburg, Germany
| | - Samuel Brem
- Department of Physics, Philipps University of Marburg, 35037 Marburg, Germany
| | - Ermin Malic
- Department of Physics, Philipps University of Marburg, 35037 Marburg, Germany
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14
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Llopez A, Leroy F, Tagne-Kaegom C, Croes B, Michon A, Mastropasqua C, Al Khalfioui M, Curiotto S, Müller P, Saùl A, Kierren B, Kremer G, Fèvre PL, Bertran F, Fagot-Revurat Y, Cheynis F. Van der Waals Epitaxy of Weyl-Semimetal T d-WTe 2. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38597601 DOI: 10.1021/acsami.4c00676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Epitaxial growth of WTe2 offers significant advantages, including the production of high-quality films, possible long-range in-plane ordering, and precise control over layer thicknesses. However, the mean island size of WTe2 grown by molecular beam epitaxy (MBE) in the literature is only a few tens of nanometers, which is not suitable for the implementation of devices at large lateral scales. Here we report the growth of Td -WTe2 ultrathin films by MBE on monolayer (ML) graphene, reaching a mean flake size of ≃110 nm, which is, on overage, more than three times larger than previous results. WTe2 films thicker than 5 nm have been successfully synthesized and exhibit the expected Td phase atomic structure. We rationalize the epitaxial growth of Td-WTe2 and propose a simple model to estimate the mean flake size as a function of growth parameters that can be applied to other transition metal dichalcogenides (TMDCs). Based on nucleation theory and the Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showing a critical coverage of 0.13 ML above which WTe2 nucleation becomes negligible. The quality of monolayer WTe2 films is demonstrated by electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES), which is in agreement with first-principles calculations performed on free-standing WTe2 and previous reports. We found electron pockets at the Fermi level, indicating a n-type doping of WTe2 with an electron density of n = 2.0 ± 0.5 × 1012 cm-2 for each electron pocket.
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Affiliation(s)
- Alexandre Llopez
- Aix Marseille Univ, CINAM, AMUtech, CNRS, Marseille 13288 France
| | - Frédéric Leroy
- Aix Marseille Univ, CINAM, AMUtech, CNRS, Marseille 13288 France
| | - Calvin Tagne-Kaegom
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, Campus ARTEM, 2 allée André Guinier, BP 50840, Nancy 54011, France
| | - Boris Croes
- Aix Marseille Univ, CINAM, AMUtech, CNRS, Marseille 13288 France
- Université de Strasbourg, IPCMS, UMR 7504 CNRS, 23 Rue du Loess Bâtiment 69, Strasbourg 67000, France
| | - Adrien Michon
- CRHEA, Université Côte d'Azur CNRS, Rue Bernard Grégory, Valbonne 06560, France
| | - Chiara Mastropasqua
- CRHEA, Université Côte d'Azur CNRS, Rue Bernard Grégory, Valbonne 06560, France
| | | | - Stefano Curiotto
- Aix Marseille Univ, CINAM, AMUtech, CNRS, Marseille 13288 France
| | - Pierre Müller
- Aix Marseille Univ, CINAM, AMUtech, CNRS, Marseille 13288 France
| | - Andrés Saùl
- Aix Marseille Univ, CINAM, AMUtech, CNRS, Marseille 13288 France
| | - Bertrand Kierren
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, Campus ARTEM, 2 allée André Guinier, BP 50840, Nancy 54011, France
| | - Geoffroy Kremer
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, Campus ARTEM, 2 allée André Guinier, BP 50840, Nancy 54011, France
| | - Patrick Le Fèvre
- Université Paris-Saclay, Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, Saint-Aubin 91190, France
- Univ Rennes, IPR - UMR 6251, CNRS, Rennes F-35000, France
| | - François Bertran
- Université Paris-Saclay, Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, Saint-Aubin 91190, France
| | - Yannick Fagot-Revurat
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, Campus ARTEM, 2 allée André Guinier, BP 50840, Nancy 54011, France
| | - Fabien Cheynis
- Aix Marseille Univ, CINAM, AMUtech, CNRS, Marseille 13288 France
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15
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Hassan A, Guo Y, Younis U, Mehmood A, Tian X, Wang Q. Contact evaluation of the penta-PdPSe/graphene vdW heterojunction: tuning the Schottky barrier and optical properties. Phys Chem Chem Phys 2024; 26:11014-11022. [PMID: 38526444 DOI: 10.1039/d3cp05589b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
In this work, we design a van der Waals heterojunction composed of semiconducting penta-PdPSe and semi-metallic graphene (G) monolayers based on state-of-the-art theoretical calculations. Our results show that both monolayers well preserve their intrinsic features and possess an n-type near Ohmic Schottky contact with a low Schottky barrier height of 0.085 eV for the electrons at the vertical interface. The electronic band alignment suggests a negative band bending of -1.47 eV at the lateral interface, implying electrons as the major transport carriers. Moreover, the transmission gap closely mirrors the heterojunction's band gap, indicating a subtle yet profound interaction between graphene and penta-PdPSe monolayers, which leads to enhanced optical absorption coefficient reaching 106 cm-1 and strong conductivity spanning the visible to ultraviolet region. In addition, our study demonstrates the ability to modify the penta-PdPSe/G heterojunction interface, switching between p-type as well as Ohmic contacts by applying external electric fields. These properties render the penta-PdPSe/G heterojunction promising for optoelectronic applications.
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Affiliation(s)
- Arzoo Hassan
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, China.
| | - Yaguang Guo
- Department of Physics, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Umer Younis
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Andleeb Mehmood
- School of Materials Science and Engineering, Peking University, Beijing 100871, China.
| | - Xiaoqing Tian
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Qian Wang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China.
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16
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Price CJ, Baker EAD, Hepplestone SP. Properties of Layered TMDC Superlattices for Electrodes in Li-Ion and Mg-Ion Batteries. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:1867-1876. [PMID: 38352854 PMCID: PMC10860140 DOI: 10.1021/acs.jpcc.3c05155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 01/04/2024] [Accepted: 01/05/2024] [Indexed: 02/16/2024]
Abstract
In this work, we present a first-principles investigation of the properties of superlattices made from transition metal dichalcogenides for use as electrodes in lithium-ion and magnesium-ion batteries. From a study of 50 pairings, we show that, in general, the volumetric expansion, intercalation voltages, and thermodynamic stability of vdW superlattice structures can be well approximated with the average value of the equivalent property for the component layers. We also found that the band gap can be reduced, improving the conductivity. Thus, we conclude that superlattice construction can be used to improve material properties through the tuning of intercalation voltages toward specific values and by increasing the stability of conversion-susceptible materials. For example, we demonstrate how pairing SnS2 with systems such as MoS2 can change it from a conversion to an intercalation material, thus opening it up for use in intercalation electrodes.
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Affiliation(s)
- Conor Jason Price
- Department of Physics, University
of Exeter, Stocker Road, Exeter EX4
4QL, U.K.
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17
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Li Y, Ding C, Li Y, Zeng J, Kang C, Chen H, Wang L, He J, Li C. Engineering the Inhomogeneity of Metal-Insulator-Semiconductor Junctions for Photoelectrochemical Methanol Oxidation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59403-59412. [PMID: 38104346 DOI: 10.1021/acsami.3c12957] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
Si-based inhomogeneous metal-insulator-semiconductor (MIS) junctions with a discontinuous metal nanostructure on the Si/insulator layer are expected to be efficient photoelectrodes for solar energy conversion. However, the formation of a metal nanostructure with an optimized arrangement on semiconductors for efficient charge carrier collection is still a big challenge. Herein, we report a method for the in situ formation of an n-Si inhomogeneous MIS junction with well-dispersed metal nanocontacts through a self-assembly process during photoelectrochemical (PEC) methanol oxidation. The photovoltage shows a strong dependence on the inhomogeneity of the n-Si MIS junction, which can be precisely tuned by the applied electrode potential and operation time. The appropriate inhomogeneity of the Schottky junction as well as the high barrier regions induced by the metal oxide/(oxy)hydroxide layer synergistically produces a large photovoltage of 500 mV for the n-Si inhomogeneous MIS junction. Finally, the n-Si-based photoanode is coupled with a CO2-to-formate reaction to realize the production of formate at both electrodes, resulting in a high faradic efficiency (FE) of 86 and 93% for anode and cathode reactions at an operational current of 30 mA/cm2, respectively. These findings provide important insights into the design of highly efficient inhomogeneous MIS junctions through an in situ self-assembly route for solar energy conversion and storage.
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Affiliation(s)
- Yanming Li
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Chenglong Ding
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Yao Li
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Jiahong Zeng
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Caitao Kang
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Honglei Chen
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Lan Wang
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Jingfu He
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
| | - Changli Li
- School of Materials, Sun Yat-sen University, Guangdong 518107, Shenzhen, P. R. China
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18
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Son MK. Key Strategies on Cu 2O Photocathodes toward Practical Photoelectrochemical Water Splitting. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:3142. [PMID: 38133039 PMCID: PMC10745550 DOI: 10.3390/nano13243142] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 12/11/2023] [Accepted: 12/13/2023] [Indexed: 12/23/2023]
Abstract
Cuprous oxide (Cu2O) has been intensively in the limelight as a promising photocathode material for photoelectrochemical (PEC) water splitting. The state-of-the-art Cu2O photocathode consists of a back contact layer for transporting the holes, an overlayer for accelerating charge separation, a protection layer for prohibiting the photocorrosion, and a hydrogen evolution reaction (HER) catalyst for reducing the overpotential of HER, as well as a Cu2O layer for absorbing sunlight. In this review, the fundamentals and recent research progress on these components of efficient and durable Cu2O photocathodes are analyzed in detail. Furthermore, key strategies on the development of Cu2O photocathodes for the practical PEC water-splitting system are suggested. It provides the specific guidelines on the future research direction for the practical application of a PEC water-splitting system based on Cu2O photocathodes.
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Affiliation(s)
- Min-Kyu Son
- Nano Convergence Materials Center, Emerging Materials R&D Division, Korea Institute of Ceramic Engineering & Technology (KICET), Jinju 52851, Republic of Korea
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19
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Zhan Y, Wu Z, Zeng P, Wang W, Jiang Y, Zheng H, Zheng P, Zheng L, Zhang Y. High-Performance Self-Powered WSe 2/ReS 2 Photodetector Enabled via Surface Charge Transfer Doping. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55043-55054. [PMID: 37967170 DOI: 10.1021/acsami.3c10654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2023]
Abstract
Two-dimensional (2D) van der Waals heterostructures based on various 2D transition metal dichalcogenides are widely used in photodetection applications. However, their response time and photoresponsivity are limited, posing a challenge for their applications in high-sensitivity photodetection. Surface charge transfer doping (SCTD) has emerged as a novel doping approach for low-dimensional materials with high specific surface area and attracted considerable attention, as it is simple and effective, does not damage the lattice, and considers various types of dopants. Herein, we prepare p-i-n junction-based photodetectors via the SCTD of WSe2/ReS2 heterojunctions using p-type dopant F4-TCNQ molecules, where doped WSe2 serves as a p-type semiconductor, undoped WSe2 acts as an intrinsic layer, and ReS2 functions as an n-type semiconductor. The surface-charge-transfer-doped WSe2/ReS2 heterojunction leads to a reduction in the Schottky barrier and an increase in the built-in electric field compared with the as-fabricated heterojunction. In the photovoltaic mode and under 785 nm laser illumination, the photodiode exhibits an increase in responsivity from 0.08 to 0.29 A/W, specific detectivity from 1.89 × 1012 to 8.02 × 1012 Jones, and the external quantum efficiency from 12.67 to 46.29%. Additionally, the p-i-n structure expands the depletion region width, resulting in a photovoltaic response time of 7.56/6.48 μs and a -3 dB cutoff frequency of over 85 kHz, an order of magnitude faster than the pristine response time. Herein, we derive an effective and simple scheme for designing high-performance, low-power optoelectronic devices based on 2D van der Waals heterostructures.
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Affiliation(s)
- Yaxin Zhan
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhangting Wu
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peiyu Zeng
- School of Physics, Southeast University, Nanjing 211189, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yuan Jiang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Hui Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peng Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Liang Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Yang Zhang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
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20
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Xie W, Pang J, Yang J, Kuang X, Mao A. Highly-efficient heterojunction solar cells based on 2D Janus transition-metal nitride halide (TNH) monolayers with ultrahigh carrier mobility. NANOSCALE 2023; 15:18328-18336. [PMID: 37921002 DOI: 10.1039/d3nr03417h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Symmetry breaking has a crucial effect on electronic band structure and subsequently affects the light-absorption coefficient of monolayers. We systematically report a family of two-dimensional (2D) Janus transition-metal nitride halides (TNHs, T = Ti, Zr, Hf, Fe, Pd, Pt, Os, and Re; H = Cl and F) with breaking of both in-plane and out-of-plane structural symmetry. The dynamical, thermal and mechanical stabilities are calculated to check the stability of the Janus TNHs. The electric properties of ten TNHs are studied via the HSE06+SOC method and the band gaps range from 0.93 eV (PdNCl) to 4.74 eV (HfNCl). Desirable light adsorption coefficients of up to 105 cm-1 are obtained for the Janus TNHs with no central symmetry. The Janus OsNCl monolayer shows excellent electrical transport properties and ultrahigh carrier mobility (104 cm2 V-1 s-1). Heterojunctions formed by stacking two Janus TNH monolayers are further investigated for solar cell applications. Eight of the heterojunctions have type-II band alignments. Surprisingly, the OsNCl/FeNCl heterojunction has a power conversion efficiency (PCE) of 23.45%, which is a larger value compared to the PCE of GeSe/SnSe heterostructures (21.47%). The optical properties and the built-in electric field of the OsNCl/FeNCl heterojunction are investigated. These results indicate that the stable Janus TNH monolayers have potential applications in photoelectric devices, and the vertical heterojunctions can be used in solar cells.
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Affiliation(s)
- Wanying Xie
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China.
| | - Jiafei Pang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China.
| | - Jinni Yang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China.
| | - Xiaoyu Kuang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China.
| | - Aijie Mao
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China.
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21
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Mu H, Zhuang R, Cui N, Cai S, Yu W, Yuan J, Zhang J, Liu H, Mei L, He X, Mei Z, Zhang G, Bao Q, Lin S. Alternating BiI 3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection. ACS NANO 2023; 17:21317-21327. [PMID: 37862706 DOI: 10.1021/acsnano.3c05849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.
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Affiliation(s)
- Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Renzhong Zhuang
- Fujian Provincial Key Laboratory of Welding Quality Intelligent Evaluation, Longyan University, Longyan 364012, P. R. China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon 999077, Hong Kong, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Jian Yuan
- School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, P. R. China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Hao Liu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Zengxia Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, P. R. China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
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22
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Kim G, Dang DX, Gul HZ, Ji H, Kim EK, Lim SC. Investigating charge traps in MoTe 2field-effect transistors: SiO 2insulator traps and MoTe 2bulk traps. NANOTECHNOLOGY 2023; 35:035702. [PMID: 37804823 DOI: 10.1088/1361-6528/ad0126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 10/06/2023] [Indexed: 10/09/2023]
Abstract
Two-dimensional material-based field-effect transistors are promising for future use in electronic and optoelectronic applications. However, trap states existing in the transistors are known to hinder device performance. They capture/release carriers in the channel and lead to hysteresis in the transfer characteristics. In this work, we fabricated MoTe2field-effect transistors on two different gate dielectrics, SiO2and h-BN, and investigated temperature-dependent charge trapping behavior on the hysteresis in their transfer curves. We observed that devices with SiO2back-gate dielectric are affected by both SiO2insulator traps and MoTe2intrinsic bulk traps, with the latter becoming prominent at temperatures above 310 K. Conversely, devices with h-BN back-gate dielectric, which host a negligible number of insulator traps, primarily exhibit MoTe2bulk traps at high temperatures, enabling us to estimate the trap energy level at 389 meV below the conduction band edge. A similar energy level of 396 meV below the conduction band edge was observed from the emission current transient measurement. From a previous computational study, we expect these trap states to be the tellurium vacancy. Our results suggest that charge traps in MoTe2field-effect transistors can be reduced by careful selection of gate insulators, thus providing guidelines for device fabrication.
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Affiliation(s)
- Giheon Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dang Xuan Dang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hamza Zad Gul
- Department of Electrical Engineering, Namal University, Mianwali 42250, Pakistan
| | - Hyunjin Ji
- Department of Electrical Engineering, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Eun Kyu Kim
- Department of Physics and Quantum-Function Research Laboratory, Hanyang University, Seoul 04763, Republic of Korea
| | - Seong Chu Lim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
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23
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Liu S, Carey T, Munuera J, Synnatschke K, Kaur H, Coleman E, Doolan L, Coleman JN. Solution-Processed Heterojunction Photodiodes Based on WSe 2 Nanosheet Networks. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2304735. [PMID: 37735147 DOI: 10.1002/smll.202304735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/25/2023] [Indexed: 09/23/2023]
Abstract
Solution-processed photodetectors incorporating liquid-phase-exfoliated transition metal dichalcogenide nanosheets are widely reported. However, previous studies mainly focus on the fabrication of photoconductors, rather than photodiodes which tend to be based on heterojunctions and are harder to fabricate. Especially, there are rare reports on introducing commonly used transport layers into heterojunctions based on nanosheet networks. In this study, a reliable solution-processing method is reported to fabricate heterojunction diodes with tungsten selenide (WSe2 ) nanosheets as the optical absorbing material and PEDOT: PSS and ZnO as injection/transport-layer materials. By varying the transport layer combinations, the obtained heterojunctions show rectification ratios of up to ≈104 at ±1 V in the dark, without relying on heavily doped silicon substrates. Upon illumination, the heterojunction can be operated in both photoconductor and photodiode modes and displays self-powered behaviors at zero bias.
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Affiliation(s)
- Shixin Liu
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Tian Carey
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Jose Munuera
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
- Department of Physics, Faculty of Sciences, University of Oviedo, C/Leopoldo Calvo Sotelo, 18 Oviedo, Asturias, 33007, Spain
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Harneet Kaur
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Emmet Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
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24
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Bao W, Wang R, Liu H, Qian C, Liu H, Yu F, Guo C, Li J, Sun K. Photoelectrochemical Engineering for Light-Assisted Rechargeable Metal Batteries: Mechanism, Development, and Future. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2303745. [PMID: 37616514 DOI: 10.1002/smll.202303745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Revised: 07/14/2023] [Indexed: 08/26/2023]
Abstract
Rechargeable battery devices with high energy density are highly demanded by our modern society. The use of metal anodes is extremely attractive for future rechargeable battery devices. However, the notorious metal dendritic and instability of solid electrolyte interface issues pose a series of challenges for metal anodes. Recently, considering the indigestible dynamical behavior of metal anodes, photoelectrochemical engineering of light-assisted metal anodes have been rapidly developed since they efficiently utilize the integration and synergy of oriented crystal engineering and photocatalysis engineering, which provided a potential way to unlock the interface electrochemical mechanism and deposition reaction kinetics of metal anodes. This review starts with the fundamentals of photoelectrochemical engineering and follows with the state-of-art advance of photoelectrochemical engineering for light-assisted rechargeable metal batteries where photoelectrode materials, working principles, types, and practical applications are explained. The last section summarizes the major challenges and some invigorating perspectives for future research on light-assisted rechargeable metal batteries.
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Affiliation(s)
- Weizhai Bao
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
- Department of Materials Physics, School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - Ronghao Wang
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - Hongmin Liu
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - Chengfei Qian
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - He Liu
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
- Department of Materials Physics, School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - Feng Yu
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
- Department of Materials Physics, School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - Cong Guo
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
- Department of Materials Physics, School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - Jingfa Li
- Institute of Advanced Materials and Flexible Electronics (IAMFE), School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
- Department of Materials Physics, School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, China
| | - Kaiwen Sun
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
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25
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Perfetto E, Stefanucci G. Real-Time GW-Ehrenfest-Fan-Migdal Method for Nonequilibrium 2D Materials. NANO LETTERS 2023; 23:7029-7036. [PMID: 37493350 DOI: 10.1021/acs.nanolett.3c01772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Quantum simulations of photoexcited low-dimensional systems are pivotal for understanding how to functionalize and integrate novel two-dimensional (2D) materials in next-generation optoelectronic devices. First-principles predictions are extremely challenging due to the simultaneous interplay of light-matter, electron-electron, and electron-nuclear interactions. We here present an advanced ab initio many-body method that accounts for quantum coherence and non-Markovian effects while treating electrons and nuclei on equal footing, thereby preserving fundamental conservation laws like the total energy. The impact of this advancement is demonstrated through real-time simulations of the complex multivalley dynamics in a molybdenum disulfide (MoS2) monolayer pumped above gap. Within a single framework, we provide a parameter-free description of the coherent-to-incoherent crossover, elucidating the role of microscopic and collective excitations in the dephasing and thermalization processes.
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Affiliation(s)
- Enrico Perfetto
- Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
- INFN, Sezione di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
| | - Gianluca Stefanucci
- Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
- INFN, Sezione di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
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26
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Liang K, Wang J, Wei X, Zhang Y, Fan J, Ni L, Yang Y, Liu J, Tian Y, Wang X, Yuan C, Duan L. Tunable electronic and optical properties of MoTe 2/InSe heterostructure via external electric field and strain engineering. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35. [PMID: 37158122 DOI: 10.1088/1361-648x/acd09b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 04/26/2023] [Indexed: 05/10/2023]
Abstract
Based on first-principles calculation under density functional theory, the geometry, electronic and optical properties of the MoTe2/InSe heterojunction have been investigated. The results reveal that the MoTe2/InSe heterojunction has a typical type-Ⅱ band alignment and exhibits an indirect bandgap of 0.99 eV. In addition, the Z-scheme electron transport mechanism is capable of efficiently separating photogenerated carriers. The bandgap of the heterostructure changes regularly under applied electric field and exhibits a significant Giant Stark effect. Under an applied electric field of 0.5 V Å-1, the band alignment of the heterojunction shifts from type-Ⅱ to type-I. The application of strain produced comparable changes in the heterojunction. More importantly, the transition from semiconductor to metal is completed in the heterostructure under the applied electric field and strain. Furthermore, the MoTe2/InSe heterojunction retains the optical properties of two monolayers and produces greater light absorption on this basis, especially for UV light. The above results offer a theoretical basis for the application of MoTe2/InSe heterostructure in the next generation of photodetectors.
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Affiliation(s)
- Kanghao Liang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jing Wang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Xing Wei
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Yan Zhang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jibin Fan
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Lei Ni
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Yun Yang
- School of Information Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jian Liu
- School of Physics, Shandong University, Jinan 250100, People's Republic of China
| | - Ye Tian
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xuqiang Wang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Chongrong Yuan
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Li Duan
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
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27
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Zi Y, Hu Y, Pu J, Wang M, Huang W. Recent Progress in Interface Engineering of Nanostructures for Photoelectrochemical Energy Harvesting Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2208274. [PMID: 36776020 DOI: 10.1002/smll.202208274] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 01/19/2023] [Indexed: 05/11/2023]
Abstract
With rapid and continuous consumption of nonrenewable energy, solar energy can be utilized to meet the energy requirement and mitigate environmental issues in the future. To attain a sustainable society with an energy mix predominately dependent on solar energy, photoelectrochemical (PEC) device, in which semiconductor nanostructure-based photocatalysts play important roles, is considered to be one of the most promising candidates to realize the sufficient utilization of solar energy in a low-cost, green, and environmentally friendly manner. Interface engineering of semiconductor nanostructures has been qualified in the efficient improvement of PEC performances including three basic steps, i.e., light absorption, charge transfer/separation, and surface catalytic reaction. In this review, recently developed interface engineering of semiconductor nanostructures for direct and high-efficiency conversion of sunlight into available forms (e.g., chemical fuels and electric power) are summarized in terms of their atomic constitution and morphology, electronic structure and promising potential for PEC applications. Extensive efforts toward the development of high-performance PEC applications (e.g., PEC water splitting, PEC photodetection, PEC catalysis, PEC degradation and PEC biosensors) are also presented and appraised. Last but not least, a brief summary and personal insights on the challenges and future directions in the community of next-generation PEC devices are also provided.
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Affiliation(s)
- You Zi
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Yi Hu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Junmei Pu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
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28
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Bikerouin M, Chdil O, Balli M. Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures. NANOSCALE 2023; 15:7126-7138. [PMID: 37000599 DOI: 10.1039/d2nr06200c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Janus monolayers, realized by breaking the vertical structural symmetry of two-dimensional (2D) materials, pave the way for a new era of high-quality and high-performance atomically-thin vertical p-n heterojunction solar cells. Herein, employing first-principles computations, Janus group-III chalcogenide monolayers, MX, M2XY, MM'X2 and MM'XY (M, M' = Ga, In; X, Y = S, Se, Te), are deeply investigated in view of their implementation in 2D photovoltaic systems. Their stability analysis reveals that the 21 investigated monolayers are energetically, thermodynamically, mechanically, dynamically, and thermally stable, confirming their growth feasibility under ambient conditions. Furthermore, owing to their optimal band gap, high charge carrier mobilities, and strong light absorption, 2D Janus group-III monolayers are predicted as promising candidates for 2D excitonic solar cell applications. In fact, 46 type-II van der Waals (vdW) heterostructures with a lattice mismatch of less than 5% are identified by analyzing the band alignments of the investigated monolayers obtained through the HSE + SOC approach. In particular, 7 vertical vdW heterojunctions with a power conversion efficiency (PCE) higher than 20% are predicted and might be the focus of future experimental and theoretical studies. To further confirm the type II band alignment, the Ga2STe-GaInS2 vdW heterostructure, which reveals the highest PCE of 23.69%, is thoroughly investigated. Our results not only predict and evaluate stable 2D Janus group-III chalcogenide monolayers and vdW heterostructures, but also suggest that they could be used as materials for next-generation optoelectronic and photovoltaic devices.
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Affiliation(s)
- M Bikerouin
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - O Chdil
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - M Balli
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
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29
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Chiu SK, Li MC, Ci JW, Hung YC, Tsai DS, Chen CH, Lin LH, Watanabe K, Taniguchi T, Aoki N, Hsieh YP, Chuang C. Enhancing optical characteristics of mediator-assisted wafer-scale MoS 2and WS 2on h-BN. NANOTECHNOLOGY 2023; 34:255703. [PMID: 36944230 DOI: 10.1088/1361-6528/acc5f1] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Accepted: 03/20/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials and their heterostructures exhibit intriguing optoelectronic properties; thus, they are good platforms for exploring fundamental research and further facilitating real device applications. The key is to preserve the high quality and intrinsic properties of 2D materials and their heterojunction interface even in production scale during the transfer and assembly process so as to apply in semiconductor manufacturing field. In this study, we successfully adopted a wet transfer existing method to separate mediator-assisted wafer-scale from SiO2/Si growing wafer for the first time with intermediate annealing to fabricate wafer-scale MoS2/h-BN and WS2/h-BN heterostructures on a SiO2/Si wafer. Interestingly, the high-quality wafer-scale 2D material heterostructure optical properties were enhanced and confirmed by Raman and photoluminescence spectroscopy. Our approach can be applied to other 2D materials and expedite mass production for industrial applications.
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Affiliation(s)
- Sheng-Kuei Chiu
- Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan
| | - Ming-Chi Li
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Ji-Wei Ci
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Yuan-Chih Hung
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Dung-Sheng Tsai
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
- Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Chien-Han Chen
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Li-Hung Lin
- Department of Electrophysics, National Chiayi University, Chiayi 600, Taiwan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Chiashain Chuang
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
- Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan 320, Taiwan
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30
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Tang Q, Zhong F, Li Q, Weng J, Li J, Lu H, Wu H, Liu S, Wang J, Deng K, Xiao Y, Wang Z, He T. Infrared Photodetection from 2D/3D van der Waals Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1169. [PMID: 37049263 PMCID: PMC10096675 DOI: 10.3390/nano13071169] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/20/2023] [Accepted: 03/21/2023] [Indexed: 06/19/2023]
Abstract
An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.
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Affiliation(s)
- Qianying Tang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jialu Weng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junzhe Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hangyu Lu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Wu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuning Liu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiacheng Wang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ke Deng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yunlong Xiao
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhen Wang
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Ting He
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Wei H, Zhang H, Song B, Yuan K, Xiao H, Cao Y, Cao Q. Metal-Organic Framework (MOF) Derivatives as Promising Chemiresistive Gas Sensing Materials: A Review. INTERNATIONAL JOURNAL OF ENVIRONMENTAL RESEARCH AND PUBLIC HEALTH 2023; 20:4388. [PMID: 36901399 PMCID: PMC10001476 DOI: 10.3390/ijerph20054388] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/06/2023] [Revised: 02/24/2023] [Accepted: 02/27/2023] [Indexed: 06/18/2023]
Abstract
The emission of harmful gases has seriously exceeded relative standards with the rapid development of modern industry, which has shown various negative impacts on human health and the natural environment. Recently, metal-organic frameworks (MOFs)-based materials have been widely used as chemiresistive gas sensing materials for the sensitive detection and monitoring of harmful gases such as NOx, H2S, and many volatile organic compounds (VOCs). In particular, the derivatives of MOFs, which are usually semiconducting metal oxides and oxide-carbon composites, hold great potential to prompt the surface reactions with analytes and thus output amplified resistance changing signals of the chemiresistors, due to their high specific surface areas, versatile structural tunability, diversified surface architectures, as well as their superior selectivity. In this review, we introduce the recent progress in applying sophisticated MOFs-derived materials for chemiresistive gas sensors, with specific emphasis placed on the synthesis and structural regulation of the MOF derivatives, and the promoted surface reaction mechanisms between MOF derivatives and gas analytes. Furthermore, the practical application of MOF derivatives for chemiresistive sensing of NO2, H2S, and typical VOCs (e.g., acetone and ethanol) has been discussed in detail.
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Affiliation(s)
- Huijie Wei
- Key Laboratory of Energy Thermal Conversion and Control of Ministry of Education, School of Energy and Environment, Southeast University, Nanjing 210096, China
| | - Huiyan Zhang
- Key Laboratory of Energy Thermal Conversion and Control of Ministry of Education, School of Energy and Environment, Southeast University, Nanjing 210096, China
| | - Bing Song
- Key Laboratory of Energy Thermal Conversion and Control of Ministry of Education, School of Energy and Environment, Southeast University, Nanjing 210096, China
| | - Kaiping Yuan
- Frontier Institute of Chip and System, Fudan University, Shanghai 200438, China
| | - Hongbin Xiao
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yunyi Cao
- Laundry Appliances Business Division of Midea Group, Wuxi 214028, China
| | - Qi Cao
- Key Laboratory of Energy Thermal Conversion and Control of Ministry of Education, School of Energy and Environment, Southeast University, Nanjing 210096, China
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Hong R, Liu Q, Cao Q, Xu J, Xiao R, Zhang H. Catalytic upcycling of waste polypropylene for gram-scale production of FeCo@N-doped carbon nanotubes toward efficient oxygen reduction electrocatalysis. J Electroanal Chem (Lausanne) 2023. [DOI: 10.1016/j.jelechem.2023.117394] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/30/2023]
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He M, Guan M, Zhan R, Zhou K, Fu H, Wang X, Zhong F, Ding M, Jia C. Two-Dimensional Materials Applied in Membranes of Redox Flow Battery. Chem Asian J 2023; 18:e202201152. [PMID: 36534005 DOI: 10.1002/asia.202201152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 12/14/2022] [Accepted: 12/15/2022] [Indexed: 12/23/2022]
Abstract
Redox flow batteries (RFBs) are one of the most promising techniques to store and convert green and renewable energy, benefiting from their advantages of high safety, flexible design and long lifespan. Membranes with fast and selective ions transport are required for the advances of RFBs. Remarkably, two-dimensional (2D) materials with high mechanical and chemical stability, strict size exclusion and abundantly modifiable functional groups, have attracted extensive attentions in the applications of energy fields. Herein, the improvements and perspectives of 2D materials working for ionic transportation and sieving in RFBs membranes are presented. The characteristics of various materials and their advantages and disadvantages in the applications of RFBs membranes particularly are focused. This review is expected to provide a guidance for the design of membranes based on 2D materials for RFBs.
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Affiliation(s)
- Murong He
- Institute of Energy Storage Technology, Changsha University of Science & Technology, Changsha, 410114, P. R. China.,College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, 410114, P. R. China
| | - Minyuan Guan
- Huzhou Power Supply Company of State Grid Zhejiang Electric Power Company Ltd., Huzhou, 313000, P. R. China
| | - Ruifeng Zhan
- Huzhou Power Supply Company of State Grid Zhejiang Electric Power Company Ltd., Huzhou, 313000, P. R. China.,Huzhou Electric Power Design Institute Company Ltd., Huzhou, 313000, P. R. China
| | - Kaiyun Zhou
- Huzhou Power Supply Company of State Grid Zhejiang Electric Power Company Ltd., Huzhou, 313000, P. R. China
| | - Hu Fu
- Institute of Energy Storage Technology, Changsha University of Science & Technology, Changsha, 410114, P. R. China.,College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, 410114, P. R. China
| | - Xinan Wang
- Institute of Energy Storage Technology, Changsha University of Science & Technology, Changsha, 410114, P. R. China.,College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, 410114, P. R. China
| | - Fangfang Zhong
- Institute of Energy Storage Technology, Changsha University of Science & Technology, Changsha, 410114, P. R. China.,College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, 410114, P. R. China
| | - Mei Ding
- Institute of Energy Storage Technology, Changsha University of Science & Technology, Changsha, 410114, P. R. China.,College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, 410114, P. R. China
| | - Chuankun Jia
- Institute of Energy Storage Technology, Changsha University of Science & Technology, Changsha, 410114, P. R. China.,College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, 410114, P. R. China
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Qiu L, Si G, Bao X, Liu J, Guan M, Wu Y, Qi X, Xing G, Dai Z, Bao Q, Li G. Interfacial engineering of halide perovskites and two-dimensional materials. Chem Soc Rev 2023; 52:212-247. [PMID: 36468561 DOI: 10.1039/d2cs00218c] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2022]
Abstract
Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have received significant attention from industry and academia alike. HPs are emerging materials that have exciting photoelectric properties, such as a high absorption coefficient, rapid carrier mobility and high photoluminescence quantum yields, making them excellent candidates for various optoelectronic applications. 2D materials possess confined carrier mobility in 2D planes and are widely employed in nanostructures to achieve interfacial modification. HP/2D material interfaces could potentially reveal unprecedented interfacial properties, including light absorbance with desired spectral overlap, tunable carrier dynamics and modified stability, which may lead to several practical applications. In this review, we attempt to provide a comprehensive perspective on the development of interfacial engineering of HP/2D material interfaces. Specifically, we highlight the recent progress in HP/2D material interfaces considering their architectures, electronic energetics tuning and interfacial properties, discuss the potential applications of these interfaces and analyze the challenges and future research directions of interfacial engineering of HP/2D material interfaces. This review links the fields of HPs and 2D materials through interfacial engineering to provide insights into future innovations and their great potential applications in optoelectronic devices.
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Affiliation(s)
- Lei Qiu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Guangyuan Si
- Melbourne Center for Nanofabrication, Victorian Node of the Australian National Fabrication Facility, 151 Wellington Road, Clayton, Victoria 3168, Australia
| | - Xiaozhi Bao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR 999078, China
| | - Jun Liu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Mengyu Guan
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Yiwen Wu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Xiang Qi
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Hunan 411105, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR 999078, China
| | - Zhigao Dai
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China. .,Shenzhen Institute, China University of Geosciences, Shenzhen 518057, China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, China.,Nanjing kLight Laser Technology Co. Ltd., Nanjing, Jiangsu 210032, China.
| | - Guogang Li
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China. .,Zhejiang Institute, China University of Geosciences, Hangzhou 311305, China
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Investigation of Photoelectrochemical Performance under the Piezoelectric Effect Based on Different Zinc Oxide Morphologies. INORGANICS 2022. [DOI: 10.3390/inorganics11010011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022] Open
Abstract
Recently, the piezoelectric effect has been widely used in photoelectrochemical (PEC) water splitting, and the morphology of the piezoelectric material is a critical factor affecting the piezo-photoelectrochemical water splitting performance. Herein, we explored the mechanism of the piezo-photoelectrochemical performance of zinc oxide (ZnO) that is affected by the morphology. Firstly, three different ZnO nanostructures (nanosheets, nanorods, and nanospheres) were synthesized by the electrodeposition, hydrothermal, and sol-gel methods, respectively. Then, the measurements of PEC water splitting performance under the piezoelectric effect revealed a 3-fold increase for the ZnO nanosheets, a 1.4-fold increase for the nanorods, and a 1.2-fold increase for the nanospheres compared to no piezoelectric effect. Finally, finite element simulation showed that nanosheets generated the highest piezoelectric potential (0.6 V), followed by nanorods (0.2 V), and nanospheres the lowest (0.04 V). Thus, among the three morphologies, the ZnO nanosheets exhibited a great improvement in PEC performance under the piezoelectric effect. The great improvement is due to the non-axial vertical homogeneous growth of the ZnO nanosheets, subjecting them to the highest effective deformation stress, which enables the ZnO nanosheets to produce the highest piezoelectric potential to accelerate the carrier separation and limit the recombination of photoelectrons and holes. This work serves as a guide for developing various photoelectrodes that are used in piezo-photoelectrochemical water splitting.
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Tan Y, Yang L, Zhai D, Sun L, Zhai S, Zhou W, Wang X, Deng WQ, Wu H. MXene-Derived Metal-Organic Framework@MXene Heterostructures toward Electrochemical NO Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204942. [PMID: 36323622 DOI: 10.1002/smll.202204942] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Revised: 10/14/2022] [Indexed: 06/16/2023]
Abstract
The electrochemical sensing of nitric oxide (NO) molecules by metal-organic framework (MOF) catalysts has been impeded, to a large extent, owing to their poor electrical conductivity and weak NO adsorption. In this work, incomplete in situ conversion of V2 CTx (T = terminal atoms) MXene to MOF is adopted, forming MOF@MXene heterostructures, which outperform MXene and MOF monocomponents toward electrochemical NO sensing. Density functional theory (DFT) calculation results indicate metal-like electronic characters for the heterostructure benefiting from the dominating contribution of the V 3d orbitals of the metallic MXene. Moreover, plane-averaged charge density difference shows substantial charge redistribution occurs at the heterointerfaces, producing a built-in field, which facilitates charge transfer. Besides, molecular mechanics-based simulated annealing calculation reveals greatly enhanced adsorption energies of NO molecules on the heterointerfaces than that on separate MOFs and MXenes. Hence, the facilitated charge transfer and preferential NO adsorption are responsible for the dramatically promoted performance toward NO sensing. The prudent design of MOF@MXene heterostructure may spur advanced electrocatalysts for electrochemical sensing.
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Affiliation(s)
- Yi Tan
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Li Yang
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Dong Zhai
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Lanju Sun
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Shengliang Zhai
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Wei Zhou
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Xiao Wang
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Wei-Qiao Deng
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
| | - Hao Wu
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong, 266237, China
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Zeng L, Zhang S, Yao L, Bi Z, Zhang Y, Kang P, Yan J, Zhang Z, Yun J. A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic application. NANOTECHNOLOGY 2022; 34:065702. [PMID: 36356303 DOI: 10.1088/1361-6528/aca1cc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 11/10/2022] [Indexed: 06/16/2023]
Abstract
The two-dimensional heterostructures with type-II band alignment and super-high carrier mobility offer an updated perspective for photovoltaic devices. Here, based on the first-principles calculation, a novel vertical NGyne/GaSe heterostructure with an intrinsic type-II band alignment, super-high carrier mobility (104cm2V-1s-1), and strong visible to ultraviolet light absorption (104-105cm-1) is constructed. We investigate the electronic structure and the interfacial properties of the NGyne/GaSe heterostructure under electric field and strain. The band offsets and band gap of the NGyne/GaSe heterostructure can be regulated under applied vertical electric field and strain efficiently. Further study reveals that the photoelectric conversion efficiency of the NGyne/GaSe heterostructure is vastly improved under a negative electric field and reaches up to 25.09%. Meanwhile, near-free electron states are induced under a large applied electric field, leading to the NGyne/GaSe heterostructure transform from semiconductors to metal. Our results indicate that the NGyne/GaSe heterostructure will have extremely potential in optoelectronic devices, especially solar cells.
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Affiliation(s)
- Liru Zeng
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Siyu Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Linwei Yao
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Zhisong Bi
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Yanni Zhang
- College of Physics & Electronic Engineering, Xianyang Normal University, Xianyang, 712000, People's Republic of China
| | - Peng Kang
- Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada
| | - Junfeng Yan
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Zhiyong Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Jiangni Yun
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
- Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada
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Liu X, Liu C, Fu Y, Xu Y, Khan K, Tareen AK, Zhang Y. van der Waals integration of mixed-dimensional CeO 2@Bi heterostructure for high-performance self-powered photodetector with fast response speed. NANOSCALE 2022; 14:16120-16129. [PMID: 36301088 DOI: 10.1039/d2nr04428e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Heterostructures have been extensively investigated for optoelectronic devices owing to their fantastic physicochemical properties. Herein, a mixed-dimensional van der Waals heterostructure (vdWH) CeO2@Bi, 1D ceria (CeO2) loaded with 0D bismuth quantum dots (Bi QDs), is synthesized through a facile hydrothermal bottom-up method. It is found that the fabricated CeO2@Bi-based photoelectrochemical (PEC)-type photodetector (PD) shows self-powered photodetection capability with a fast photoresponse speed of 0.02 s. Besides, a photocurrent of 2.00 μA cm-2 and a photoresponsivity of 888.89 μA W-1 under 365 nm illumination are obtained. Furthermore, good long-term cycle stability is also observed after 1 month in a harsh environment, indicating the great potential for practical applications. These results are further supported by density functional theory (DFT) calculations. We believe that the presented work is expected to provide a new pathway for the future utilization of vdWHs for high-performance optoelectronics.
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Affiliation(s)
- Xinlin Liu
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
| | - Cailing Liu
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
| | - Yushuang Fu
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
| | - Yiguo Xu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Karim Khan
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - Ye Zhang
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
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39
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Recent Insights into Cu-Based Catalytic Sites for the Direct Conversion of Methane to Methanol. Molecules 2022; 27:molecules27217146. [DOI: 10.3390/molecules27217146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 10/13/2022] [Accepted: 10/19/2022] [Indexed: 11/05/2022] Open
Abstract
Direct conversion of methane to methanol is an effective and practical process to improve the efficiency of natural gas utilization. Copper (Cu)-based catalysts have attracted great research attention, due to their unique ability to selectively catalyze the partial oxidation of methane to methanol at relatively low temperatures. In recent decades, many different catalysts have been studied to achieve a high conversion of methane to methanol, including the Cu-based enzymes, Cu-zeolites, Cu-MOFs (metal-organic frameworks) and Cu-oxides. In this mini review, we will detail the obtained evidence on the exact state of the active Cu sites on these various catalysts, which have arisen from the most recently developed techniques and the results of DFT calculations. We aim to establish the structure–performance relationship in terms of the properties of these materials and their catalytic functionalities, and also discuss the unresolved questions in the direct conversion of methane to methanol reactions. Finally, we hope to offer some suggestions and strategies for guiding the practical applications regarding the catalyst design and engineering for a high methanol yield in the methane oxidation reaction.
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Lee DJ, Mohan Kumar G, Ganesh V, Jeon HC, Kim DY, Kang TW, Ilanchezhiyan P. Novel Nanoarchitectured Cu 2Te as a Photocathodes for Photoelectrochemical Water Splitting Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3192. [PMID: 36144977 PMCID: PMC9506189 DOI: 10.3390/nano12183192] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 09/08/2022] [Accepted: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Designing photocathodes with nanostructures has been considered a promising way to improve the photoelectrochemical (PEC) water splitting activity. Cu2Te is one of the promising semiconducting materials for photoelectrochemical water splitting, the performance of Cu2Te photocathodes remains poor. In this work, we report the preparation of Cu2Te nanorods (NRs) and vertical nanosheets (NSs) assembled film on Cu foil through a vapor phase epitaxy (VPE) technique. The obtained nano architectures as photocathodes toward photoelectrochemical (PEC) performance was tested afterwards for the first time. Optimized Cu2Te NRs and NSs photocathodes showed significant photocurrent density up to 0.53 mA cm-2 and excellent stability under illumination. Electrochemical impedance spectroscopy and Mott-Schottky analysis were used to analyze in more detail the performance of Cu2Te NRs and NSs photocathodes. From these analyses, we propose that Cu2Te NRs and NSs photocathodes are potential candidate materials for use in solar water splitting.
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Affiliation(s)
- Dong Jin Lee
- Quantum-Functional Semiconductor Research Center (QSRC), Institute of Future Technology, Dongguk University, Seoul 04623, Korea
| | - G. Mohan Kumar
- Quantum-Functional Semiconductor Research Center (QSRC), Institute of Future Technology, Dongguk University, Seoul 04623, Korea
| | - V. Ganesh
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chennai 603203, India
| | - Hee Chang Jeon
- Quantum-Functional Semiconductor Research Center (QSRC), Institute of Future Technology, Dongguk University, Seoul 04623, Korea
| | - Deuk Young Kim
- Quantum-Functional Semiconductor Research Center (QSRC), Institute of Future Technology, Dongguk University, Seoul 04623, Korea
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04623, Korea
| | - Tae Won Kang
- Quantum-Functional Semiconductor Research Center (QSRC), Institute of Future Technology, Dongguk University, Seoul 04623, Korea
| | - P. Ilanchezhiyan
- Quantum-Functional Semiconductor Research Center (QSRC), Institute of Future Technology, Dongguk University, Seoul 04623, Korea
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Wang S, Fan N, Zhou Z, Hu Y, Hui Q, Li Q, Xue J, Zhou Z, Feng Z, Yan Q, Weng Y, Tang R, Zheng F, Fan R, Xu B, Fang L, You L. Self-Enhancing Photoelectrochemical Properties in van der Waals Ferroelectric CuInP 2S 6 by Photoassisted Acid Hydrolysis. ACS APPLIED MATERIALS & INTERFACES 2022; 14:40126-40135. [PMID: 36000928 DOI: 10.1021/acsami.2c10216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Transition metal thiophosphate, CuInP2S6 (CIPS), has recently emerged as a potentially promising material for photoelectrochemical (PEC) water splitting due to its intrinsic ferroelectric polarization for spontaneous photocarrier separation. However, the poor kinetics of the hydrogen evolution reaction (HER) greatly limits its practical applications. Herein, we report self-enhancing photocatalytic behavior of a CIPS photocathode due to chemically driven oxygen incorporation by photoassisted acid oxidation. The optimal oxygen-doped CIPS demonstrates a >1 order of magnitude enhancement in the photocurrent density compared to that of pristine CIPS. Through comprehensive spectroscopic and microscopic investigations combined with theoretical calculations, we disclose that oxygen doping will lower the Fermi level position and decrease the HER barrier, which further accelerates charge separation and improves the HER activity. This work may deliver a universal and facile strategy for improving the PEC performance of other van der Waals metal thiophosphates.
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Affiliation(s)
- Shun Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Ningbo Fan
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
- Institute of Theoretical and Applied Physics, Soochow University, Suzhou 215006, China
| | - Zhou Zhou
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Yiqi Hu
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Qiang Hui
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Qiankun Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Jinshuo Xue
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Ziwen Zhou
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Zhijian Feng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Qingyu Yan
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Yuyan Weng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Rujun Tang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Fengang Zheng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Ronglei Fan
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Bin Xu
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
- Institute of Theoretical and Applied Physics, Soochow University, Suzhou 215006, China
| | - Liang Fang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
| | - Lu You
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China
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42
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Pei S, Wang Z, Xia J. Interlayer Coupling: An Additional Degree of Freedom in Two-Dimensional Materials. ACS NANO 2022; 16:11498-11503. [PMID: 35943159 DOI: 10.1021/acsnano.1c11498] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to their layered nature, two-dimensional nanomaterials can stack into artificial material systems, with van der Waals interaction between the adjacent constituent layers. In such heterostructures, the physical properties are largely affected by the interlayer coupling and can thus be effectively tuned by a number of means. In this Perspective, we highlight four such experimental approaches: stacking order, electric field, intercalation, and pressure, and we discuss challenges and opportunities in future studies for van der Waals heterostructures.
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Affiliation(s)
- Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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43
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Cao J, Zhang X, Zhao S. Mechanistic study of two-dimensional CrS 2/Sc 2CF 2 direct Z-scheme heterojunction as the solar-driven water-splitting photocatalyst. Mol Phys 2022. [DOI: 10.1080/00268976.2022.2112988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/15/2022]
Affiliation(s)
- Jiameng Cao
- Xi'an University of Technology, Xi'an, People’s Republic of China
| | - Xianbin Zhang
- Xi'an University of Technology, Xi'an, People’s Republic of China
| | - Shihan Zhao
- Xi'an University of Technology, Xi'an, People’s Republic of China
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44
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Ji J, Choi JH. Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields. NANOSCALE 2022; 14:10648-10689. [PMID: 35839069 DOI: 10.1039/d2nr01358d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.
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Affiliation(s)
- Jaehoon Ji
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
| | - Jong Hyun Choi
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
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45
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Abstract
The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.
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46
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Abhijith T, E S, Suthar R, Sharma P, Thomas S, Karak S. Understanding the linear and nonlinear optical responses of few-layer exfoliated MoS 2and WS 2nanoflakes: experimental and simulation studies. NANOTECHNOLOGY 2022; 33:435702. [PMID: 35850090 DOI: 10.1088/1361-6528/ac81d7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Accepted: 07/17/2022] [Indexed: 06/15/2023]
Abstract
Understanding the linear and nonlinear optical (NLO) responses of two-dimensional nanomaterials is essential to effectively utilize them in various optoelectronic applications. Here, few-layer MoS2and WS2nanoflakes with lateral size less than 200 nm were prepared by liquid-phase exfoliation, and their linear and NLO responses were studied simultaneously using experimental measurements and theoretical simulations. Finite-difference time-domain (FDTD) simulations confirmed the redshift in the excitonic transitions when the thickness was increased above 10 nm indicating the layer-number dependent bandgap of nanoflakes. WS2nanoflakes exhibited around 5 times higher absorption to scattering cross-section ratio than MoS2nanoflakes at various wavelengths. Open aperture Z scan analysis of both the MoS2and WS2nanoflakes using 532 nm nanosecond laser pulses reveals strong nonlinear absorption activity with effective nonlinear absorption coefficient (βeff) of 120 cm GW-1and 180 cm GW-1, respectively, which was attributed to the combined contributions of ground, singlet excited and triplet excited state absorption. FDTD simulation results also showed the signature of strong absorption density of few layer nanoflakes which may be account for their excellent NLO characteristics. Optical limiting threshold values of MoS2and WS2nanoflakes were obtained as ∼1.96 J cm-2and 0.88 J cm-2, respectively, which are better than many of the reported values. Intensity dependent switching from saturable absorption (SA) to reverse SA was also observed for MoS2nanoflakes when the laser intensity increased from 0.14 to 0.27 GW cm-2. The present study provides valuable information to improve the selection of two-dimensional nanomaterials for the design of highly efficient linear and nonlinear optoelectronic devices.
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Affiliation(s)
- T Abhijith
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Shiju E
- International School of Photonics, Cochin University of Science and Technology, Cochin 682022, Kerala, India
| | - Rakesh Suthar
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Punit Sharma
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Sheenu Thomas
- International School of Photonics, Cochin University of Science and Technology, Cochin 682022, Kerala, India
| | - Supravat Karak
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
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47
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Besse R, Wang H, West D, Da Silva JLF, Zhang S. Prediction of Effective Photoelectron and Hole Separation in Type-I MoS 2/PtSe 2 van der Waals Junction. J Phys Chem Lett 2022; 13:6407-6411. [PMID: 35802831 DOI: 10.1021/acs.jpclett.2c01526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Understanding the dynamics of charge transfer at vertical heterostructures of transition metal dichalcogenide monolayers is fundamentally important for future technological applications, given the unique feature of van der Waals interactions at the interface. Here, we employ time-dependent density functional theory formalism combined with molecular dynamics to investigate photoexcited electrons and holes in the type-I MoS2/PtSe2 van der Waals heterobilayer. While type-I junctions have been traditionally viewed as being ineffective in photocarrier separation, we show that here a different mechanism from type-II is at play, which effectively separates photoelectrons from photoholes. The key is the phonon bottleneck, arising from the characteristically different dynamic band alignments in the valence and conduction bands, respectively, which only affects the transfer of holes but not electrons. The disparity between electron and hole transfer rates offers a new direction for effective control of charge separation at interfaces.
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Affiliation(s)
- Rafael Besse
- São Carlos Institute of Physics, University of São Paulo, P.O. Box 369, 13560-970, São Carlos, São Paulo Brazil
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Han Wang
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Damien West
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Juarez L F Da Silva
- São Carlos Institute of Chemistry, University of São Paulo, P.O. Box 780, 13560-970, São Carlos, São Paulo Brazil
| | - Shengbai Zhang
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
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48
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Sibhatu AK, Alene Asres G, Yimam A, Teshome T. Two-dimensional MXO/MoX 2 (M = Hf, Ti and X = S, Se) van der Waals heterostructure: a promising photovoltaic material. RSC Adv 2022; 12:21270-21279. [PMID: 35975064 PMCID: PMC9344374 DOI: 10.1039/d2ra03204j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2022] [Accepted: 07/17/2022] [Indexed: 01/01/2023] Open
Abstract
Nanoscale materials with multifunctional properties are necessary for the quick development of high-performance devices for a wide range of applications, hence theoretical research into new two-dimensional (2D) materials is encouraged. 2D materials have a distinct crystalline structure that leads to intriguing occurrences. Stacking diverse two-dimensional (2D) materials has shown to be an efficient way for producing high-performance semiconductor materials. We explored a 2D nanomaterial family, an MXO/MoX2 heterostructure (M = Hf, Ti and X = S, Se), for their various applications using first-principles calculations. We discovered that all of the heterostructure materials utilized are direct band gap semiconductors with band gaps ranging from 1.0 to 2.0 eV, with the exception of hexagonal HfSeO/MoSe2, which has a band gap of 0.525 eV. The influence of strain on the band gap of this HfSeO/MoSe2 material was investigated. In the visible range, we obtained promising optical responses with a high-power conversion efficiency. With fill factors of 0.5, MXO/MoX2 photovoltaic cells showed great PCE of up to 17.8%. The tunable electronic characteristics of these two-dimensional materials would aid in the development of energy conversion devices. According to our findings, the 2D Janus heterostructure of MXO/MoX2 (M = Hf, Ti and X = S, Se) material is an excellent choice for photovoltaic solar cells. Nanoscale materials with multifunctional properties are necessary for the quick development of high-performance devices for a wide range of applications, hence theoretical research into new two-dimensional (2D) materials is encouraged.![]()
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Affiliation(s)
- Aman Kassaye Sibhatu
- Department of Chemical Engineering, School of Chemical and Bio Engineering, Addis Ababa Institute of Technology, Addis Ababa University Addis Ababa Ethiopia +251 911950214.,Department of Chemical Engineering, College Biological and Chemical Engineering, Addis Ababa Science and Technology University P. O. Box 16417 Addis Ababa Ethiopia
| | - Georgies Alene Asres
- Center for Materials Engineering, Addis Ababa Institute of Technology, School of Multi-disciplinary Engineering Addis Ababa 1000 Ethiopia
| | - Abubeker Yimam
- Department of Chemical Engineering, School of Chemical and Bio Engineering, Addis Ababa Institute of Technology, Addis Ababa University Addis Ababa Ethiopia +251 911950214
| | - Tamiru Teshome
- Department of Physics, College of Natural and Social Science, Addis Ababa Science and Technology University P. O. Box 16417 Addis Ababa Ethiopia +251 966 253 809
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49
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Zeng P, Wang W, Han D, Zhang J, Yu Z, He J, Zheng P, Zheng H, Zheng L, Su W, Huo D, Ni Z, Zhang Y, Wu Z. MoS 2/WSe 2 vdW Heterostructures Decorated with PbS Quantum Dots for the Development of High-Performance Photovoltaic and Broadband Photodiodes. ACS NANO 2022; 16:9329-9338. [PMID: 35687375 DOI: 10.1021/acsnano.2c02012] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals heterostructures (vdWHs) overcoming the lattice and processing limitations of conventional heterostructures provide an opportunity to develop high-performance 2D vdWH solar cells and photodiodes. However, it is challenging to improve the sensitivity and response speed of 2D vdWH photovoltaic devices due to the low light absorption efficiency and electron/hole traps in heterointerfaces. Here, we design a PbS/MoS2/WSe2 heterostructure photodiode in which a light-sensitive PbS quantum dot (QD) layer combined with a MoS2/WSe2 heterostructure significantly enhances the photovoltaic response. The electron current in the heterostructure is increased by the effective collection of photogenerated electrons induced by PbS QDs. The device exhibits a broadband photovoltaic response from 405 to 1064 nm with a maximum responsivity of 0.76 A/W and a specific detectivity of 5.15 × 1011 Jones. In particular, the response speed is not limited by multiple electron traps in the PbS QDs/2D material heterointerface, and a fast rising/decaying time of 43/48 μs and a -3 dB cutoff frequency of over 10 kHz are achieved. The negative differential capacitance and frequency dependence of capacitance demonstrate the presence of interface states in the MoS2/WSe2 heterointerface that hamper the improvement of the response speed. The scheme to enhance photovoltaic performance without sacrificing response speed provides opportunities for the development of high-performance 2D vdWH optoelectronic devices.
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Affiliation(s)
- Peiyu Zeng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Dongshuang Han
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Jundong Zhang
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhihao Yu
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jiaoyan He
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peng Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Hui Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Liang Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Dexuan Huo
- Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China
- School of Physics, Purple Mountain Laboratories, Southeast University, Nanjing 21119, China
| | - Yang Zhang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhangting Wu
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
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50
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Nasr M, Benhamou L, Kotbi A, Rajput NS, Campos A, Lahmar AI, Hoummada K, Kaja K, El Marssi M, Jouiad M. Photoelectrochemical Enhancement of Graphene@WS 2 Nanosheets for Water Splitting Reaction. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1914. [PMID: 35683769 PMCID: PMC9181989 DOI: 10.3390/nano12111914] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Revised: 05/26/2022] [Accepted: 05/31/2022] [Indexed: 11/16/2022]
Abstract
Tungsten disulfide nanosheets were successfully prepared by one-step chemical vapor deposition using tungsten oxide and thiourea in an inert gas environment. The size of the obtained nanosheets was subsequently reduced down to below 20 nm in width and 150 nm in length using high-energy ball milling, followed by 0.5 and 1 wt% graphene loading. The corresponding vibrational and structural characterizations are consistent with the fabrication of a pure WS2 structure for neat sampling and the presence of the graphene characteristic vibration modes in graphene@WS2 compounds. Additional morphological and crystal structures were examined and confirmed by high-resolution electron microscopy. Subsequently, the investigations of the optical properties evidenced the high optical absorption (98%) and lower band gap (1.75 eV) for the graphene@WS2 compared to the other samples, with good band-edge alignment to water-splitting reaction. In addition, the photoelectrochemical measurements revealed that the graphene@WS2 (1 wt%) exhibits an excellent photocurrent density (95 μA/cm2 at 1.23 V bias) compared with RHE and higher applied bias potential efficiency under standard simulated solar illumination AM1.5G. Precisely, graphene@WS2 (1 wt%) exhibits 3.3 times higher performance compared to pristine WS2 and higher charge transfer ability, as measured by electrical impedance spectroscopy, suggesting its potential use as an efficient photoanode for hydrogen evolution reaction.
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Affiliation(s)
- Mahmoud Nasr
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 Rue Saint-Leu, CEDEX 1, 80039 Amiens, France; (M.N.); (L.B.); (A.K.); (A.-I.L.); (M.E.M.)
- Solid-State Physics Department, Physics Research Institute, National Research Centre, 33 El-Bohouth Street, Dokki, Giza 12622, Egypt
| | - Lamyae Benhamou
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 Rue Saint-Leu, CEDEX 1, 80039 Amiens, France; (M.N.); (L.B.); (A.K.); (A.-I.L.); (M.E.M.)
| | - Ahmed Kotbi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 Rue Saint-Leu, CEDEX 1, 80039 Amiens, France; (M.N.); (L.B.); (A.K.); (A.-I.L.); (M.E.M.)
| | - Nitul S. Rajput
- Advanced Materials Research Center, Technology Innovation Institute, Abu Dhabi P.O. Box 9639, United Arab Emirates;
| | - Andrea Campos
- Aix Marseille University, Faculté des Sciences et Techniques, CP2M, IM2NP, Avenue Escadrille Normandie Niemen, 13397 Marseille, France; (A.C.); (K.H.)
| | - Abdel-Ilah Lahmar
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 Rue Saint-Leu, CEDEX 1, 80039 Amiens, France; (M.N.); (L.B.); (A.K.); (A.-I.L.); (M.E.M.)
| | - Khalid Hoummada
- Aix Marseille University, Faculté des Sciences et Techniques, CP2M, IM2NP, Avenue Escadrille Normandie Niemen, 13397 Marseille, France; (A.C.); (K.H.)
| | - Khaled Kaja
- Laboratoire National de Métrologie et D’essais (LNE), 29 Avenue Roger Hannequin, 78197 Trappes, France;
| | - Mimoun El Marssi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, Scientific Pole, 33 Rue Saint-Leu, CEDEX 1, 80039 Amiens, France; (M.N.); (L.B.); (A.K.); (A.-I.L.); (M.E.M.)
| | - Mustapha Jouiad
- Solid-State Physics Department, Physics Research Institute, National Research Centre, 33 El-Bohouth Street, Dokki, Giza 12622, Egypt
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