Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor

Laser-Induced Graphene for Advanced Sensing: Comprehensive Review of Applications

Laser-induced graphene (LIG) and Laser-scribed graphene (LSG) are both advanced materials with significant potential in various applications, particularly in the field of sustainable sensors. The practical uses of LIG (LSG), which include gas detection, biological process monitoring, strain assessment, and environmental variable tracking, are thoroughly examined in this review paper. Its tunable characteristics distinguish LIG (LSG), which is developed from accurate laser beam modulation on polymeric substrates, and they are essential in advancing sensing technologies in many applications. The recent advances in LIG (LSG) applications include energy storage, biosensing, and electronics by steadily advancing efficiency and versatility. The remarkable flexibility of LIG (LSG) and its transformative potential in regard to sensor manufacturing and utilization are highlighted in this manuscript. Moreover, it thoroughly examines the various fabrication methods used in LIG (LSG) production, highlighting precision and adaptability. This review navigates the difficulties that are encountered in regard to implementing LIG sensors and looks ahead to future developments that will propel the industry forward. This paper provides a comprehensive summary of the latest research in LIG (LSG) and elucidates this innovative material's advanced and sustainable elements.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

P-N Heterojunction formation: Metal Sulfide@Metal Oxide Chemiresistor for ppb H2S Detection from Exhaled Breath and Food Spoilage at Flexible Room Temperature

The development of a portable, low-cost sensor capable of accurately detecting H2S gas in exhaled human breath at room temperature is highly anticipated in the fields of human health assessment and food spoilage evaluation. However, achieving outstanding gas sensing performance and applicability for flexible room-temperature operation with parts per billion H2S gas sensors still poses technical challenges. To address this issue, this study involves the in situ growth of MoS2 nanosheets on the surface of In2O3 fibers to construct a p-n heterojunction. The In2O3@MoS2-2 sensor exhibits a high response of 460.61 to 50 ppm of H2S gas at room temperature, which is 19.5 times higher than that of the pure In2O3 sensor and 322.1 times higher than that of pure MoS2. The In2O3@MoS2-2 also demonstrates a minimum detection limit of 3 ppb and maintains a stable response to H2S gas even after being bent 50 times at a 60° angle. These exceptional gas sensing properties are attributed to the increase in oxygen vacancies and chemisorbed oxygen on In2O3@MoS2-2 nanofibers as well as the formation of the p-n heterojunction, which modulates the heterojunction barrier. Furthermore, in this study, we successfully applied the In2O3@MoS2-2 sensor for oral disease and detection of food spoilage conditions, thereby providing new design insights for the development of portable exhaled gas sensors and gas sensors for evaluating food spoilage conditions at room temperature.

Resistive gas sensors for the detection of NH3gas based on 2D WS2, WSe2, MoS2, and MoSe2: a review

Transition metal dichalcogenides (TMDs) with a two-dimensional (2D) structure and semiconducting features are highly favorable for the production of NH3gas sensors. Among the TMD family, WS2, WSe2, MoS2, and MoSe2exhibit high conductivity and a high surface area, along with high availability, reasons for which they are favored in gas-sensing studies. In this review, we have discussed the structure, synthesis, and NH3sensing characteristics of pristine, decorated, doped, and composite-based WS2, WSe2, MoS2, and MoSe2gas sensors. Both experimental and theoretical studies are considered. Furthermore, both room temperature and higher temperature gas sensors are discussed. We also emphasized the gas-sensing mechanism. Thus, this review provides a reference for researchers working in the field of 2D TMD gas sensors.

Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides

2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.

Regulating Chemisorption and Electrosorption Activity for Efficient Uptake of Rare Earth Elements in Low Concentration on Oxygen-Doped Molybdenum Disulfide

Recovery of rare earth elements (REEs) with trace amount in environmental applications and nuclear energy is becoming an increasingly urgent issue due to their genotoxicity and important role in society. Here, highly efficient recovery of low-concentration REEs from aqueous solutions by an enhanced chemisorption and electrosorption process of oxygen-doped molybdenum disulfide (O-doped MoS2) electrodes is performed. All REEs could be extremely recovered through a chemisorption and electrosorption coupling (CEC) method, and sorption behaviors were related with their outer-shell electrons. Light, medium, and heavy ((La(III), Gd(III), and Y(III)) rare earth elements were chosen for further investigating the adsorption and recovery performances under low-concentration conditions. Recovery of REEs could approach 100% under a low initial concentration condition where different recovery behaviors occurred with variable chemisorption interactions between REEs and O-doped MoS2. Experimental and theoretical results proved that doping O in MoS2 not only reduced the transfer resistance and improved the electrical double layer thickness of ion storage but also enhanced the chemical interaction of REEs and MoS2. Various outer-shell electrons of REEs performed different surficial chemisorption interactions with exposed sulfur and oxygen atoms of O-doped MoS2. Effects of variants including environmental conditions and operating parameters, such as applied voltage, initial concentration, pH condition, and electrode distance on adsorption capacity and recovery of REEs were examined to optimize the recovery process in order to achieve an ideal selective recovery of REEs. The total desorption of REEs from the O-doped MoS2 electrode was realized within 120 min while the electrode demonstrated a good cycling performance. This work presented a prospective way in establishing a CEC process with a two-dimensional metal sulfide electrode through structure engineering for efficient recovery of REEs within a low concentration range.

2D nanomaterials for realization of flexible and wearable gas sensors: A review

Gas sensors are extensively employed for monitoring and detection of hazardous gases and vapors. Many of them are produced on rigid substrates, but flexible and wearable gas sensors are needed for intriguing usage including the internet of things (IoT) and medical devices. The materials with the greatest potential for the fabrication of flexible and wearable gas sensing devices are two-dimensional (2D) semiconducting nanomaterials, which consist of graphene and its substitutes, transition metal dichalcogenides, and MXenes. These types of materials have good mechanical flexibility, high charge carrier mobility, a large area of surface, an abundance of defects and dangling bonds, and, in certain instances adequate transparency and ease of synthesis. In this review, we have addressed the different 2D nonmaterial properties for gas sensing in the context of fabrication of flexible/wearable gas sensors. We have discussed the sensing performance of flexible/wearable gas sensors in various forms such as pristine, composite and noble metal decorated. We believe that content of this review paper is greatly useful for the researchers working in the research area of fabrication of flexible/wearable gas sensors.

Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides

The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.

Wafer-Scale Field-Effect Transistor-Type Sensor Using a Carbon Nanotube Film as a Channel for Ppb-Level Hydrogen Sulfide Detection

Sulfur hexafluoride is widely used in power equipment because of its excellent insulation and arc extinguishing properties. However, severe damage to power equipment may be caused and a large-scale collapse of the power grid may occur when SF6 is decomposed into H2S, SOF2, and SO2F2. It is difficult to detect the SF6 concentration as it is a kind of inert gas. Generally, the trace gas decomposed in the early stage of SF6 is detected to achieve the function of early warning. Consequently, it is of great significance to realize the real-time detection of trace gases decomposed from SF6 for the early fault diagnosis of power equipment. In this work, a wafer-scale gate-sensing carbon-based FET gas sensor is fabricated on a four-inch carbon wafer for the detection of H2S, a decomposition product of SF6. The carbon nanotubes with semiconductor properties and the noble metal Pt are respectively used as a channel and a sensing gate of the FET-type gas sensor, and the channel transmission layer and the sensing gate layer each play an independent role and do not interfere with each other by introducing the gate dielectric layer Y2O3, giving full play to their respective advantages to forming an integrated sensor of gas detection and signal amplification. The detection limit of the as-prepared gate-sensing carbon-based FET gas sensor can reach 20 ppb, and its response deviation is not more than 3% for the different batches of gas sensors. This work provides a potentially useful solution for the industrial production of miniaturized and integrated gas sensors.

Transparent Electronics for Wearable Electronics Application

Recent advancements in wearable electronics offer seamless integration with the human body for extracting various biophysical and biochemical information for real-time health monitoring, clinical diagnostics, and augmented reality. Enormous efforts have been dedicated to imparting stretchability/flexibility and softness to electronic devices through materials science and structural modifications that enable stable and comfortable integration of these devices with the curvilinear and soft human body. However, the optical properties of these devices are still in the early stages of consideration. By incorporating transparency, visual information from interfacing biological systems can be preserved and utilized for comprehensive clinical diagnosis with image analysis techniques. Additionally, transparency provides optical imperceptibility, alleviating reluctance to wear the device on exposed skin. This review discusses the recent advancement of transparent wearable electronics in a comprehensive way that includes materials, processing, devices, and applications. Materials for transparent wearable electronics are discussed regarding their characteristics, synthesis, and engineering strategies for property enhancements. We also examine bridging techniques for stable integration with the soft human body. Building blocks for wearable electronic systems, including sensors, energy devices, actuators, and displays, are discussed with their mechanisms and performances. Lastly, we summarize the potential applications and conclude with the remaining challenges and prospects.

Unusual Selective Monitoring of N,N-Dimethylformamide in a Two-Dimensional Material Field-Effect Transistor

N,N-Dimethylformamide (DMF) is an essential solvent in industries and pharmaceutics. Its market size range was estimated to be 2 billion U.S. dollars in 2022. Monitoring DMF in solution environments in real time is significant because of its toxicity. However, DMF is not a redox-active molecule; therefore, selective monitoring of DMF in solutions, especially in polar aqueous solutions, in real time is extremely difficult. In this paper, we propose a selective DMF sensor using a molybdenum disulfide (MoS2) field-effect transistor (FET). The sensor responds to DMF molecules but not to similar molecules of formamide, N,N-diethylformamide, and N,N-dimethylacetamide. The plausible atomic mechanism is the oxygen substitution sites on MoS2, on which the DMF molecule shows an exceptional orientation. The thin structure of MoS2-FET can be incorporated into a microfluidic chamber, which leads to DMF monitoring in real time by exchanging solutions subsequently. The designed device shows DMF monitoring in NaCl ionic solutions from 1 to 200 μL/mL. This work proposes the concept of selectively monitoring redox-inactive molecules based on the nonideal atomic affinity site on the surface of two-dimensional semiconductors.

Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C

Two-dimensional MoS₂ is a promising material for applications, including electronics and electrocatalysis. However, scalable methods capable of depositing MoS₂ at low temperatures are scarce. Herein, we present a toolbox of advanced plasma-enhanced atomic layer deposition (ALD) processes, producing wafer-scale polycrystalline MoS₂ films of accurately controlled thickness. Our ALD processes are based on two individually controlled plasma exposures, one optimized for deposition and the other for modification. In this way, film properties can be tailored toward different applications at a very low deposition temperature of 150 °C. For the modification step, either H₂ or Ar plasma can be used to combat excess sulfur incorporation and crystallize the films. Using H₂ plasma, a higher degree of crystallinity compared with other reported low-temperature processes is achieved. Applying H₂ plasma steps periodically instead of every ALD cycle allows for control of the morphology and enables deposition of smooth, polycrystalline MoS₂ films. Using an Ar plasma instead, more disordered MoS₂ films are deposited, which show promise for the electrochemical hydrogen evolution reaction. For electronics, our processes enable control of the carrier density from 6 × 10¹⁶ to 2 × 10²¹ cm^-3 with Hall mobilities up to 0.3 cm² V^-1 s^-1. The process toolbox forms a basis for rational design of low-temperature transition metal dichalcogenide deposition processes compatible with a range of substrates and applications.

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for "h-BN on demand" under a frugal thermal budget.

Facile fabrication of gas sensors based on molybdenum disulfide nanosheets and carbon nanotubes by self-assembly

The rising importance of gas detection has prompted rigorous research on flexible and transparent high-performance gas sensors. We demonstrated a sensor for NO₂ detection at room temperature, in which our device was fabricated via screen printing on a flexible substrate, and MoS₂ and single-walled carbon nanotube (SWCNT) were coated on a specific area by the self-assembly method. This fabrication process is rapid, facile, and cost-effective. The proposed sensor enables precise and stable NO₂ gas sensing from 50 ppb to 100 ppm. This method should also be applicable to the selective detection of other gases.

Wearable chemical sensors based on 2D materials for healthcare applications

Chemical sensors worn on the body could make possible the continuous, noninvasive, and accurate monitoring of vital human signals, which is necessary for remote health monitoring and telemedicine. Attractive for creating high-performance, wearable chemical sensors are atomically thin materials with intriguing physical features, abundant chemistry, and high surface-to-volume ratios. These advantages allow for appropriate material-analyte interactions, resulting in a high level of sensitivity even at trace analyte concentrations. Previous review articles covered the material and device elements of 2D material-based wearable devices extensively. In contrast, little research has addressed the existing state, future outlook, and promise of 2D materials for wearable chemical sensors. We provide an overview of recent advances in 2D-material-based wearable chemical sensors to overcome this deficiency. The structure design, manufacturing techniques, and mechanisms of 2D material-based wearable chemical sensors will be evaluated, as well as their applicability in human health monitoring. Importantly, we present a thorough review of the current state of the art and the technological gaps that would enable the future design and nanomanufacturing of 2D materials and wearable chemical sensors. Finally, we explore the challenges and opportunities associated with designing and implementing 2D wearable chemical sensors.

Large-Scale Ultra-Robust MoS2 Patterns Directly Synthesized on Polymer Substrate for Flexible Sensing Electronics

Synthesis of large-area patterned MoS₂ is considered the principle base for realizing high-performance MoS₂ -based flexible electronic devices. Patterning and transferring MoS₂ films to target flexible substrates, however, require conventional multi-step photolithography patterning and transferring process, despite tremendous progress in the facilitation of practical applications. Herein, an approach to directly synthesize large-scale MoS₂ patterns that combines inkjet printing and thermal annealing is reported. An optimal precursor ink is prepared that can deposit arbitrary patterns on polyimide films. By introducing a gas atmosphere of argon/hydrogen (Ar/H₂ ), thermal treatment at 350 °C enables an in situ decomposition and crystallization in the patterned precursors and, consequently, results in the formation of MoS₂ . Without complicated processes, patterned MoS₂ is obtained directly on polymer substrate, exhibiting superior mechanical flexibility and durability (≈2% variation in resistance over 10,000 bending cycles), as well as excellent chemical stability, which is attributed to the generated continuous and thin microstructures, as well as their strong adhesion with the substrate. As a step further, this approach is employed to manufacture various flexible sensing devices that are insensitive to body motions and moisture, including temperature sensors and biopotential sensing systems for real-time, continuously monitoring skin temperature, electrocardiography, and electromyography signals.

Wafer-Scale Production of Two-Dimensional Tin Monoselenide: Expandable Synthetic Platform for van der Waals Semiconductor-Based Broadband Photodetectors

A synthetic platform for industrially applicable two-dimensional (2D) semiconductors that addresses the paramount issues associated with large-scale production, wide-range photosensitive materials, and oxidative stability has not yet been developed. In this study, we attained the 6 in. scale production of 2D SnSe semiconductors with spatial homogeneity using a rational synthetic platform based on the thermal decomposition of solution-processed single-source precursors. The long-range structural and chemical homogeneities of the 2D SnSe layers are manifested using comprehensive spectroscopic analyses. Furthermore, the capability of the SnSe-based photodetectors for broadband photodetection is distinctly verified. The photoresponsivity and detectivity of the SnSe-based photodetectors are 5.89 A W-1 and 1.8 × 1011 Jones at 532 nm, 1.2 A W-1 and 3.7 × 1010 Jones at 1064 nm, and 0.14 A W-1 and 4.3 × 109 Jones at 1550 nm, respectively. The minimum rise times for the 532 and 1064 nm lasers are 62 and 374 μs, respectively. The photoelectrical analysis of the 5 × 5 SnSe-based photodetector array reveals 100% active devices with 95.06% photocurrent uniformity. We unequivocally validated that the air and thermal stabilities of the photocurrent yielded from the SnSe-based photodetector are determined to be >30 d in air and 160 °C, respectively, which are suitable for optoelectronic applications.

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4 Se9

Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing to their absence of dangling bonds and their intriguing low-dimensional properties. The emergence of 2D materials has enabled the achievement of significant progress in both the discovery of physical phenomena and the realization of superior devices. In this work, the group IV metal chalcogenide 2D-layered Ge₄ Se₉ is introduced as a new selection of insulating vdW material. 2D-layered Ge₄ Se₉ is synthesized with a rectangular shape using the metalcorganic chemical vapor deposition system using a liquid germanium precursor at 240 °C. By stacking the Ge₄ Se₉ and MoS₂ , vdW heterostructure devices are fabricated with a giant memory window of 129 V by sweeping back gate range of ±80 V. The gate-independent decay time reveals that the large hysteresis is induced by the interfacial charge transfer, which originates from the low band offset. Moreover, repeatable conductance changes are observed over the 2250 pulses with low non-linearity values of 0.26 and 0.95 for potentiation and depression curves, respectively. The energy consumption of the MoS₂ /Ge₄ Se₉ device is about 15 fJ for operating energy and the learning accuracy of image classification reaches 88.3%, which further proves the great potential of artificial synapses.

Cascading Photoelectric Detecting and Chemiresistive Gas-Sensing Properties of Pb5 S2 I6 Nanowire Mesh for Multi-Factor Accurate Fire Alarm

Accurate fire warning is very important for people's life and property safety. The most commonly used fire alarm is based on the detection of a single factor of gases, smoke particles, or temperature, which easily causes false alarm due to complex environmental conditions. A facile multi-factor route for fabricating an accurate analog fire alarm using a Pb₅ S₂ I₆ nanowire mesh based on its photoelectric and gas-sensing dual function is presented. The Pb₅ S₂ I₆ nanowire mesh presents excellent photoelectric detection capabilities and is sensitive to ppm-level NO₂ at room temperature. Under the "two-step verification" circuit of light and gas factors, the bimodal simulation fire alarm based on this Pb₅ S₂ I₆ nanowire mesh can resist the interference of complex environmental factors and effectively reduce the false alarm rate.

Wearable RGO/MXene Piezoresistive Pressure Sensors with Hierarchical Microspines for Detecting Human Motion

Flexible piezoresistive pressure sensors may exhibit excellent sensing performances to be applied in wearable electronics, medical diagnosis, and electronic skin. Herein, we report a multi-layer and phased-responsive reduced graphene oxide/MXene-based piezoresistive pressure sensor with hierarchical microspines constructed by sandpaper as the template. Thanks to the multi-level and multi-layer structure, the obtained sensor realized phased response and showed wide detection range (up to 70 kPa), fast response (response/recovery time of 40/80 ms), and excellent working stability (1000 fatigue cycles). Furthermore, the sensor was successfully applied for detecting various human motions including pulse beats, cheek bulging, nodding, finger bending, speech recognition, handwriting, and other pressure signals. Besides, a 6 × 6 sensing matrix integrated by the sensors was able to sensitively perceive the distribution of plane pressure. The findings in this work conceivably stand out as a new strategy to fabricate high-performance piezoresistive pressure sensors in the fields of intelligent healthcare and medical diagnosis, wearable electronic devices, electronic skin, and human-machine interaction.

Self-Healing, Self-Adhesive and Stable Organohydrogel-Based Stretchable Oxygen Sensor with High Performance at Room Temperature

With the advent of the 5G era and the rise of the Internet of Things, various sensors have received unprecedented attention, especially wearable and stretchable sensors in the healthcare field. Here, a stretchable, self-healable, self-adhesive, and room-temperature oxygen sensor with excellent repeatability, a full concentration detection range (0-100%), low theoretical limit of detection (5.7 ppm), high sensitivity (0.2%/ppm), good linearity, excellent temperature, and humidity tolerances is fabricated by using polyacrylamide-chitosan (PAM-CS) double network (DN) organohydrogel as a novel transducing material. The PAM-CS DN organohydrogel is transformed from the PAM-CS composite hydrogel using a facile soaking and solvent replacement strategy. Compared with the pristine hydrogel, the DN organohydrogel displays greatly enhanced mechanical strength, moisture retention, freezing resistance, and sensitivity to oxygen. Notably, applying the tensile strain improves both the sensitivity and response speed of the organohydrogel-based oxygen sensor. Furthermore, the response to the same concentration of oxygen before and after self-healing is basically the same. Importantly, we propose an electrochemical reaction mechanism to explain the positive current shift of the oxygen sensor and corroborate this sensing mechanism through rationally designed experiments. The organohydrogel oxygen sensor is used to monitor human respiration in real-time, verifying the feasibility of its practical application. This work provides ideas for fabricating more stretchable, self-healable, self-adhesive, and high-performance gas sensors using ion-conducting organohydrogels.

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

This review presents the results of cutting-edge research on chemiresistive gas sensors in Korea with a focus on the research activities of the laboratories of Professors Sang Sub Kim and Hyoun Woo Kim. The advances in the synthesis techniques and various strategies to enhance the gas-sensing performances of metal-oxide-, sulfide-, and polymer-based nanomaterials are described. In particular, the gas-sensing characteristics of different types of sensors reported in recent years, including core-shell, self-heated, irradiated, flexible, Si-based, glass, and metal-organic framework sensors, have been reviewed. The most crucial achievements include the optimization of shell thickness in core-shell gas sensors, decrease in applied voltage in self-heated gas sensors to less than 5 V, optimization of irradiation dose to achieve the highest response to gases, and the design of selective and highly flexible gas sensors-based WS2 nanosheets. The underlying sensing mechanisms are discussed in detail. In summary, this review provides an overview of the chemiresistive gas-sensing research activities led by the corresponding authors of this manuscript.

A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.

Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

The detection of harmful trace gases, such as formaldehyde (HCHO), is a technical challenge in the current gas sensor field. The weak electrical signal caused by trace amounts of gases is difficult to be detected and susceptible to other gases. Based on the amplification effect of a field-effect transistor (FET), a carbon-based FET-type gas sensor with a gas-sensing gate is proposed for HCHO detection at the ppb level. Semiconducting carbon nanotubes (s-CNTs) and a catalytic metal are chosen as channel and gate materials, respectively, for the FET-type gas sensor, which makes full use of the respective advantages of the channel transport layer and the sensitive gate layer. The as-prepared carbon-based FET-type gas sensor exhibits a low detection limit toward HCHO up to 20 ppb under room temperature (RT), which can be improved to 10 ppb by a further heating strategy. It also exhibits a remarkable elevated recovery rate from 80 to 97% with almost no baseline drift (2%) compared to the RT condition, revealing excellent reproducibility, stability, and recovery. The role of sensitive function in the FET-type gas sensor is performed by means of an independent gas-sensing gate, that is, the independence of the sensitive gate and the electron transmission channel is the main reason for its high sensitivity detection. We hope our work can provide an instructive approach for designing high-performance formaldehyde sensor chips with on-chip integration potential.

Kinetic 2D Crystals via Topochemical Approach

The designing of novel materials is a fascinating and innovative pathway in materials science. Particularly, novel layered compounds have tremendous influence in various research fields. Advanced fundamental studies covering various aspects, including reactants and synthetic methods, are required to obtain novel layered materials with unique physical and chemical properties. Among the promising synthetic techniques, topochemical approaches have afforded the platform for widening the extent of novel 2D materials. Notably, the synthesis of binary layered materials is considered as a major scientific breakthrough after the synthesis of graphene as they exhibit a wide spectrum of material properties with varied potential applicability. In this review, a comprehensive overview of the progress in the development of metastable layered compounds is presented. The various metastable layered compounds synthesized from layered ternary bulk materials through topochemical approaches are listed, followed by the descriptions of their mechanisms, structural analyses, characterizations, and potential applications. Finally, an essential research direction concerning the synthesis of new materials is indicated, wherein the possible application of topochemical approaches in unprecedented areas is explored.

Atomic-Layer-Deposition-Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by the atomic layer deposition (ALD) technique, which is widely applied in industries. In addition to the synthesis of 2D TMCs, ALD is used to modulate the characteristic of 2D TMCs such as their carrier density and morphology. So far, the improvement of thin film uniformity without oxidation and the synthesis of low-dimensional nanomaterials on 2D TMCs have been the research focus. Herein, the synthesis and modulation of 2D TMCs by ALD is described, and the characteristics of ALD-based TMCs used in nanoelectronics, sensors, and energy applications are discussed.

Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2film using a new one-step strategy

Two-dimensional (2D) materials attached with flexible substrates enable possibilities to apply their superior properties to the rapidly increasing demand for foldable displays and wearable biosensors in the internet-of-things technology. However, previous two-step strategy to construct the flexible devices, namely first obtaining 2D materials elsewhere and then transferring them onto flexible substrates, can cause huge problems, including irreversibly undermining the device performance and limiting the material size. Here we propose a new one-step strategy (other than the liquid phase processing and low temperature synthesis methods), namely directly depositing appropriate 2D materials onto flexible substrates, which involves no transferring and can maintain the crystal quality and properties to the greatest extent. More importantly, this strategy in principle has no limit in the film size, hence removing a main obstacle for the practical use of flexible films, such as complex logic operations and large-area optoelectronic applications. Using this strategy, a centimeter-scale SnSe₂film is directly grown on polydimethylsiloxane, which is characterized as a uniform, out-of-plane oriented and semiconducting film that is robust to deformations. Based on the film, a flexible photodetector is fabricated and distinct photoresponse to a broad spectrum of light (405-830 nm) is observed, with remarkable technical parameters.

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature

The large-area synthesis of high-quality MoS₂ plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS₂ require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS₂ with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low-substrate temperature, the MOCVD-grown MoS₂ exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm² V^-1 s^-1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS₂ growth process via a geometric model of the MoS₂ flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.

Robust Room-Temperature NO2 Sensors from Exfoliated 2D Few-Layered CVD-Grown Bulk Tungsten Di-selenide (2H-WSe2)

We report a facile and robust room-temperature NO2 sensor fabricated using bi- and multi-layered 2H variant of tungsten di-selenide (2H-WSe2) nanosheets, exhibiting high sensing characteristics. A simple liquid-assisted exfoliation of 2H-WSe2, prepared using ambient pressure chemical vapor deposition, allows smooth integration of these nanosheets on transducers. Three sensor batches are fabricated by modulating the total number of layers (L) obtained from the total number of droplets from a homogeneous 2H-WSe2 dispersion, such as ∼2L, ∼5-6L, and ∼13-17L, respectively. The gas-sensing attributes of 2H-WSe2 nanosheets are investigated thoroughly. Room temperature (RT) experiments show that these devices are specifically tailored for NO2 detection. 2L WSe2 nanosheets deliver the best rapid response compared to ∼5-6L or ∼13-17L. The response of 2L WSe2 at RT is 250, 328, and 361% to 2, 4, and 6 ppm NO2, respectively. The sensor showed nearly the same response toward low NO2 concentration even after 9 months of testing, confirming its remarkable long-term stability. A selectivity study, performed at three working temperatures (RT, 100, and 150 °C), shows high selectivity at 150 and 100 °C. Full selectivity toward NO2 at RT confirms that 2H-WSe2 nanosheet-based sensors are ideal candidates for NO2 gas detection.

Design of hierarchical SnSe2 for efficient detection of trace NO2 at room temperature

Nanosheet-assembled hierarchical SnSe2 could serve as a new suitable candidate for high-performance room-temperature NO2 gas sensing.

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.

Stretchable gas sensors for detecting biomarkers from humans and exposed environments

The recent advent of stretchable gas sensors demonstrates their capabilities to detect not only gaseous biomarkers from the human body but also toxic gas species from the exposed environment. To ensure accurate gas detection without device breakdown from the mechanical deformations, the stretchable gas sensors often rely on the direct integration of gas-sensitive nanomaterials on the stretchable substrate or fibrous network, as well as being configured into stretchable structures. The nanomaterials in the forms of nanoparticles, nanowires, or thin-films with nanometer thickness are explored for a variety of sensing materials. The commonly used stretchable structures in the stretchable gas sensors include wrinkled structures from a pre-strain strategy, island-bridge layouts or serpentine interconnects, strain isolation approaches, and their combinations. This review aims to summarize the recent advancement in novel nanomaterials, sensor design innovations, and new fabrication approaches of stretchable gas sensors.

Rational Design of Semiconductor-Based Chemiresistors and their Libraries for Next-Generation Artificial Olfaction

Artificial olfaction based on gas sensor arrays aims to substitute for, support, and surpass human olfaction. Like mammalian olfaction, a larger number of sensors and more signal processing are crucial for strengthening artificial olfaction. Due to rapid progress in computing capabilities and machine-learning algorithms, on-demand high-performance artificial olfaction that can eclipse human olfaction becomes inevitable once diverse and versatile gas sensing materials are provided. Here, rational strategies to design a myriad of different semiconductor-based chemiresistors and to grow gas sensing libraries enough to identify a wide range of odors and gases are reviewed, discussed, and suggested. Key approaches include the use of p-type oxide semiconductors, multinary perovskite and spinel oxides, carbon-based materials, metal chalcogenides, their heterostructures, as well as heterocomposites as distinctive sensing materials, the utilization of bilayer sensor design, the design of robust sensing materials, and the high-throughput screening of sensing materials. In addition, the state-of-the-art and key issues in the implementation of electronic noses are discussed. Finally, a perspective on chemiresistive sensing materials for next-generation artificial olfaction is provided.

Vertically Aligned 2D MoS2 Layers with Strain-Engineered Serpentine Patterns for High-Performance Stretchable Gas Sensors: Experimental and Theoretical Demonstration

Two-dimensional (2D) molybdenum disulfide (MoS₂) with vertically aligned (VA) layers exhibits significantly enriched surface-exposed edge sites with an abundance of dangling bonds owing to its intrinsic crystallographic anisotropy. Such structural variation renders the material with exceptionally high chemical reactivity and chemisorption ability, making it particularly attractive for high-performance electrochemical sensing. This superior property can be further promoted as far as it is integrated on mechanically stretchable substrates well retaining its surface-exposed defective edges, projecting opportunities for a wide range of applications utilizing its structural uniqueness and mechanical flexibility. In this work, we explored VA-2D MoS₂ layers configured in laterally stretchable forms for multifunctional nitrogen dioxide (NO₂) gas sensors. Large-area (>cm²) VA-2D MoS₂ layers grown by a chemical vapor deposition (CVD) method were directly integrated onto a variety of flexible substrates with serpentine patterns judiciously designed to accommodate a large degree of tensile strain. These uniquely structured VA-2D MoS₂ layers were demonstrated to be highly sensitive to NO₂ gas of controlled concentration preserving their intrinsic structural and chemical integrity, e.g., significant current response ratios of ∼160-380% upon the introduction of NO₂ at a level of 5-30 ppm. Remarkably, they exhibited such a high sensitivity even under lateral stretching up to 40% strain, significantly outperforming previously reported 2D MoS₂ layer-based NO₂ gas sensors of any structural forms. Underlying principles for the experimentally observed superiority were theoretically unveiled by density functional theory (DFT) calculation and finite element method (FEM) analysis. The intrinsic high sensitivity and large stretchability of VA-2D MoS₂ layers confirmed in this study are believed to be applicable in sensing diverse gas species, greatly broadening their versatility in stretchable and wearable technologies.

Nonthermal Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Molybdenum Disulfide

Molybdenum disulfide (MoS2) is being studied for a wide range of applications including lithium-ion batteries and hydrogen evolution reaction catalysts. In this paper, we present a single-step nonthermal plasma-enhanced chemical vapor deposition (PECVD) process for the production of two-dimensional MoS2. This method provides an alternative route to established CVD and plasma synthesis routes. The approach presented here synthesizes films in only a few minutes using elemental sulfur (S8) and molybdenum pentachloride (MoCl5) as precursors. Deposition utilizes a nonthermal inductively coupled plasma reactor and temperatures around 500 °C. Film growth characteristics and nucleation are studied as a function of precursor concentrations, argon flow rate, plasma power, and deposition time. Few-layer two-dimensional (MoS2) films were formed at low precursor concentrations. Films with nanoparticle-like features were formed when the precursor concentration was high. Noncontinuous nonstoichiometric films were found at low plasma power, while high plasma power led to continuous films with good stoichiometry. The vacancies and defects in these films may provide active sites for hydrogen evolution.

Synergistic CNFs/CoS2/MoS2 Flexible Films with Unprecedented Selectivity for NO Gas at Room Temperature

Recently, room-temperature flexible gas sensors have been widely studied because they can operate without being heated and create low-cost, low-power-consumption devices with long-term stability. Here, by designing the active material composition and structure, we report an electrospun carbon nanofiber (CNF) network grafted by two-dimensional MoS₂ nanosheets and embedded CoS₂ nanoparticles, which serves as a flexible gas sensor for various toxic or hazardous gases working at room temperature. In particular, the CNFs/CoS₂/MoS₂ hybrid films exhibit very high selectivity toward NO over other gases including NO₂ and CH₄, with selectivity coefficients (|S_NO/S_NO2| and |S_NO/S_CH4|) as high as 43 and 42 (defined as the ratio of responses between two gases). The sensor shows a linear relationship in the gas concentration range of 1-100 ppm and a stable response during repeated bending. Theoretical calculations suggest that MoS₂ can be selectively n-doped by NO, while CoS₂ can effectively capture NO molecules, leading to enhanced selectivity and sensitivity. Our large-area flexible sensors made by synergistic design have potential applications in biological and environmental areas for low-cost, selective detection of toxic or targeted gases.

H2S detection at low temperatures by Cu2O/Fe2O3 heterostructure ordered array sensors

2D heterostructures are promising gas sensor materials due to their surface/interface effects and hybrid properties. In this research, Cu₂O/Fe₂O₃ heterostructure ordered arrays were synthesized using an in situ electrodeposition method for H₂S detection at low temperatures. These arrays possess a periodic long range ordered structure with horizontal multi-heterointerfaces, leading to superior gas sensitivity for synergistic effects at the heterointerfaces. The sensor based on the Cu₂O/Fe₂O₃ heterostructure ordered arrays exhibits a dramatic improvement in H₂S detection at low temperatures (even as low as −15 °C). The response is particularly significant at room and human body temperatures since the conductivity of the arrays can change by up to three orders of magnitude in a 10 ppm H₂S atmosphere. These good performances are also attributed to the formation of metallic Cu₂S conducting channels. Our results imply that the Cu₂O/Fe₂O₃ heterostructure ordered arrays are promising candidates for high-performance H₂S gas sensors that function at low temperatures as well as breath analysis systems for disease diagnosis.

Cu₂O/Fe₂O₃ heterostructure ordered arrays exhibit excellent H₂S sensitivity at low temperatures based on the mechanism of surface absorption/desorption and the sulphurization of Cu₂O.

Improved Sensitivity in Schottky Contacted Two-Dimensional MoS2 Gas Sensor

Two-dimensional (2D) transition-metal dichalcogenides have attracted significant attention as gas-sensing materials owing to their superior responsivity at room temperature and their possible application as flexible electronic devices. Especially, reliable responsivity and selectivity for various environmentally harmful gases are the main requirements for the future chemiresistive-type gas sensor applications. In this study, we demonstrate improved sensitivity of a 2D MoS₂-based gas sensor by controlling the Schottky barrier height. Chemical vapor deposition process was performed at low temperature to obtain layer-controlled 2D MoS₂, and the NO₂ gas responsivity was confirmed by the fabricated gas sensor. Then, the number of MoS₂ layers was fixed and the types of electrode materials were varied for controlling the Schottky barrier height. As the Schottky barrier height increased, the NO₂ responsivity increased, and it was found to be effective for CO and CO₂ gases, which had little reactivity in 2D MoS₂-based gas sensors.

Challenges and recent advancements of functionalization of two-dimensional nanostructured molybdenum trioxide and dichalcogenides

Atomically thin two-dimensional (2D) semiconductors are the thinnest functional semiconducting materials available today. Among them, both molybdenum trioxide and chalcogenides (MT&Ds) represent key components within the family of different 2D semiconductors for various electronic, optoelectronic and electrochemical applications due to their unique electronic, optical, mechanical and electrochemical properties. However, despite great progress in research dedicated to the development and fabrication of 2D MT&Ds observed within the last decade, there are significant challenges that affected their charge transport behavior and fabrication on a large scale as well as there is high dependence of the carrier mobility on the thickness. In this article, we review the recent progress in the carrier mobility engineering of 2D MT&Ds and elaborate devised strategies dedicated to the optimization of MT&D properties. Specifically, the latest physical and chemical methods towards the surface functionalization and optimization of the major factors influencing the extrinsic transport at the electrode-2D semiconductor interface are discussed.

Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS_{2(1- x )} Se_{2 x} ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS_1.62 Se_0.38 , MoS_1.37 Se_0.63 , MoS_1.15 Se_0.85 , and MoS_0.46 Se_1.54 alloys, as well as MoS₂ and MoSe₂ . Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS₂ crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS₂ and MoSe₂ , are unambiguously achieved.

Gas Sensors Based on Mechanically Exfoliated MoS2 Nanosheets for Room-Temperature NO2 Detection

The unique properties of MoS2 nanosheets make them a promising candidate for high-performance room temperature gas detection. Herein, few-layer MoS2 nanosheets (FLMN) prepared via mechanical exfoliation are coated on a substrate with interdigital electrodes for room-temperature NO2 detection. Interestingly, compared with other NO2 gas sensors based on MoS2, FLMN gas sensors exhibit high responsivity for room-temperature NO2 detection, and NO2 is easily desorbed from the sensor surface with an ultrafast recovery behavior, with recovery times around 2 s. The high responsivity is related to the fact that the adsorbed NO2 can affect the electron states within the entire material, which is attributed to the very small thickness of the MoS2 nanosheets. First-principles calculations were carried out based on the density functional theory (DFT) to verify that the ultrafast recovery behavior arises from the weak van der Waals binding between NO2 and the MoS2 surface. Our work suggests that FLMN prepared via mechanical exfoliation have a great potential for fabricating high-performance NO2 gas sensors.