Ab-initioprediction of gigantic anomalous Nernst effect in ferromagnetic monolayer transition metal trihalides

The anomalous Hall conductivity of all transition metal trihalides was explored using first-principles calculations. Employing the Fukui-Hatsugai-Suzuki method, we found that ferromagnetic monolayersXBr3(X= Pd, Pt) possessed the quantized anomalous Hall conductivity (QAHC) with and without carrier doping. Due to unique QAHC, their transverse thermoelectric properties ofXBr3(X= Pd, Pt) were investigated. Employing the semi-classical Boltzmann transport theory, the transverse thermoelectric coefficient of each monolayer was analyzed. Anomalous Nernst coefficients (ANCs) of theXBr3monolayers were prominent both at and near the Fermi level. Under an assumed relaxation time of 10 fs, the maximum ANCs for the PdBr3(PtBr3) monolayer reached -54.1 (-23.3)µV K-1atT=300 K upon doping with 1.21 × 1014(5.64 × 1013) holes cm-2. The large ANCs of theXBr3monolayers were attributed to the opening of a narrow bandgap generated by spin-orbit coupling both at and near the Fermi level, which led to a large Seebeck-induced charge current and large anomalous Nernst conductivity. These results suggest that ferromagneticXBr3monolayers have significant potential for application in thermoelectric devices.

Monolayer V_{2}MX_{4}: A New Family of Quantum Anomalous Hall Insulators

We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V_{2}MX_{4} (M=W, Mo; X=S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number C=-1. The large topological gap originates from the deep band inversion between spin-up bands contributed by d_{xz}, d_{yz} orbitals of V and spin-down band from d_{z^{2}} orbital of M at the Fermi level. Remarkably, the Curie temperature of monolayer V_{2}MX_{4} is predicted to be much higher than that of monolayer MnBi_{2}Te_{4}. Furthermore, the thickness dependence of the Chern number for few multilayers shows interesting oscillating behavior. The general physics from the d orbitals here applies to a large class of ternary transition metal chalcogenide such as Ti_{2}WX_{4} with the space group P-42m. These interesting predictions, if realized experimentally, could greatly promote the research and application of topological quantum physics.

Electronic structure and magnetothermal properties of two-dimensional ScCl

Two-dimensional ferromagnetic materials with intrinsic half-metallic properties have strong application advantages in nanoscale spintronics. Herein, density functional theory calculations show that monolayer ScCl is a ferromagnetic metallic material when undoped (n = 0), and the transition from metal to half-metal occurs with the continuous doping of holes. On the contrary, as the concentration of doped electrons increases, the system will exhibit metallic characteristics, which is particularly evident from a variation in spin polarizability. Furthermore, we have discussed how doped carriers affect the shape of the Fermi surface and the Fermi velocity of electrons. Most importantly, Monte Carlo simulations show that the ScCl monolayer is particularly regulated by carrier concentration (n) and magnetic field (h). Additionally, trends in energy and magnetic exchange coupling in different magnetic configurations (AFM phase and FM phase) with different doping concentrations are presented. When n < -0.16, the material is not only a half-metallic material that easily flips the magnetic axis, but also proves to be a candidate ferromagnetic material that works stably at room temperature in terms of dynamic stability. In addition, the origin of magnetocrystalline anisotropy is analyzed, and the contribution of different orbitals to spin-orbit coupling is presented. Moreover, we note that when magnetic field is small (h < 1 T), the change in size has a significant effect on ferromagnetic phase transition. However, when the system size is large (size >15 nm), TC is less sensitive to magnetic field. In addition, hole doping and size effect will greatly affect the hC of the system, but when the hole doping exceeds the critical value (n = -0.16), its influence on the hysteresis loop is no longer obvious. These interesting magnetic phenomena and easily adjustable physical properties show us that monolayer ScCl will be a promising functional material.

Tunable electronic band structure and magnetic anisotropy in two-dimensional Dirac half-metal MnBr3 by external stimulus: strain, magnetization direction, and interlayer coupling

Advancing technology and growing interdisciplinary fields create the need for new materials that simultaneously possess several significant physics qualities to meet human demands. Dirac half-metals with massless fermions hold great promise in spintronic devices and optoelectronic devices associated with nontrivial band topologies. In this work, we predict that a MnBr3 monolayer will be an intrinsic Dirac half-metal based on first-principles calculations. The lattice dynamics and thermodynamic stabilities were demonstrated by calculating the phonon spectra and performing molecular dynamics simulations. One property of a MnBr3 monolayer is that facile magnetization of its in-plane can be accomplished. A change in the magnetization direction significantly modifies the electronic band structure. When considering the spin-orbit coupling effect, the Dirac cone around the Fermi level in the spin-up channel opens a gap of 35 meV, which becomes a topological nontrivial insulator with a Chern number of -1. The Chern number sign and the chiral edge current can be tuned by changing the magnetization direction. The electronic band structure and magnetic anisotropy energy can be further modulated by applying biaxial and uniaxial strain, as well as introducing interlayer coupling in the bilayer. The unique performance of MnBr3 will broaden the utilization of two-dimensional magnetism in widespread application.

Insight into the quantum anomalous Hall states in two-dimensional kagome Cr3Se4 and Fe3S4 monolayers

To realize the quantum anomalous Hall (QAH) effect in two-dimensional (2D) intrinsic magnetic materials, which combines insulating bulk states and metallic edge channel states, is still challenging in experiment. Here, based on first-principles calculations, we predicted two stable kagome-latticed QAH insulators: Cr3Se4 and Fe3S4 monolayers, with the Chern number C = 1. It is found that both structures exhibit a large magnetic anisotropy energy and sizable band gaps, and a topological phase transition from C = -1 to C = 1 occurs when the magnetization orientation changes from the z-axis to the -z-axis. Remarkably, the non-trivial topological properties are robust against biaxial strains of up to ±6%. Furthermore, a variable high Chern number of C = 2 or C = 3 can be observed by stacking two or three layers of the QAH monolayer with an MoS2 insulator. Our results signify that such layered kagome materials can be promising platforms for exploring novel QAH physics.

Quantum anomalous valley Hall effect in ferromagnetic MXenes with asymmetric functionalization

The potential to detect and manipulate the valley degree of freedom within two-dimensional hexagonal lattices possessing both inversion asymmetry and time-reversal symmetry is theoretically feasible. Intrinsic ferrovalley polarization in MXenes could be induced by asymmetric surface functionalization to break their inversion symmetry and the presence of spin-orbital coupling ensures their time-reversal symmetry. Our results indicate that the ferromagnetic Cr2COF MXene with Janus functionalization becomes an intrinsic Chern insulator with large spin-valley polarization and belongs to the family of quantum anomalous valley Hall effect (QAVHE) materials, based on Berry curvature and edge state calculations. Applying chemical engineering of functionalization to magnetic MXenes allows us to tune the structure-property relationship in 2D layers to obtain desirable spin-valley coupling. Our theoretical insight into the QAVHE on magnetic MXenes with asymmetry functionalization provides a new opportunity for valleytronics and spintronics.

Theoretical studies on electronic, magnetic and optical properties of two dimensional transition metal trihalides

Two dimensional transition metal trihalides have drawn attention over the years due to their intrinsic ferromagnetism and associated large anisotropy at nanoscale. The interactions involved in these layered structures are of van der Waals types which are important for exfoliation to different thin samples. This enables one to compare the journey of physical properties from bulk structures to monolayer counterpart. In this topical review, the modulation of electronic, magnetic and optical properties by strain engineering, alloying, doping, defect engineering etc have been discussed extensively. The results obtained by first principle density functional theory calculations are verified by recent experimental observations. The relevant experimental synthesis of different morphological transition metal trihalides are highlighted. The feasibility of such routes may indicate other possible heterostructures. Apart from spintronics based applications, transition metal trihalides are potential candidates in sensing and data storage. Moreover, high thermoelectric figure of merit of chromium trihalides at higher temperatures leads to the possibility of multi-purpose applications. We hope this review will give important directions to further research in transition metal trihalide systems having tunable band gap with reduced dimensionalities.

An ultra-high vacuum system for fabricating clean two-dimensional material devices

High mobility electron gases confined at material interfaces have been a venue for major discoveries in condensed matter physics. Ultra-high vacuum (UHV) technologies played a key role in creating such high-quality interfaces. The advent of two-dimensional (2D) materials brought new opportunities to explore exotic physics in flat lands. UHV technologies may once again revolutionize research in low dimensions by facilitating the construction of ultra-clean interfaces with a wide variety of 2D materials. Here, we describe the design and operation of a UHV 2D material device fabrication system, in which the entire fabrication process is performed under pressure lower than 5 × 10^-10 mbar. Specifically, the UHV system enables the exfoliation of atomically clean 2D materials. Subsequent in situ assembly of van der Waals heterostructures produces high-quality interfaces that are free of contamination. We demonstrate functionalities of this system through exemplary fabrication of various 2D materials and their heterostructures.

Robust Quantum Anomalous Hall States in Monolayer and Few-Layer TiTe

Quantum anomalous Hall (QAH) insulators possess exotic properties driven by novel topological physics, but related studies and potential applications have been hindered by the ultralow temperatures required to sustain the operating mechanisms dictated by key material parameters. Here, using first-principles calculations, we predict a robust QAH state in monolayer TiTe that exhibits a high ferromagnetic Curie temperature of 650 K and a sizable band gap of 261 meV. These outstanding benchmark properties stem from the Te atom's large size that favors ferromagnetic kinetic exchange with the neighboring Ti atoms and strong spin-orbit coupling that creates a QAH state by adding a mass term to the Dirac half-semimetal state. Remarkably, the ferromagnetic order remains robust against interlayer stacking via the d-p_z/p_y-p_z-d super-super exchange, generating unprecedented QAH states in few-layer configurations with enhanced Curie temperatures and higher Chern numbers. These results signify layered TiTe to be a prime template for exploring novel QAH physics at ambient and higher temperatures.

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3via strain and doping

Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo₂I₃Br₃ is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo₂I₃Br₃. We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo₂I₃Br₃, respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo₂I₃Br₃ can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo₂I₃Br₃, transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo₂I₃Br₃ is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.

Ferromagnetic Dirac half-metallicity in transition metal embedded honeycomb borophene

Exploring two-dimensional (2D) ferromagnetic materials with intrinsic Dirac half-metallicity is crucial for the development of next-generation spintronic devices. Based on first-principles calculations, here we propose a simple valence electron-counting rule to design such materials and endow them with good stability and desirable magnetic properties. Taking honeycomb borophene as a prototype, we demonstrate that embedding open-shell transition metal (like Cr) atoms in the hexagonal ring of boron atoms can provide two valence electrons to fully occupy the in-plane σ and out-of-plane π bands of B atoms. The remaining four valence electrons reside in d orbitals that split under C_6v symmetry, yielding a magnetic moment of ∼2 μ_B per Cr atom. The resulting CrB₂ monolayer exhibits a Dirac half-metal band structure, a high Curie temperature of 175 K, and a large out-of-plane magnetic anisotropy energy of 4 meV per Cr simultaneously. Our work establishes a feasible route for the experimental realization of ferromagnetic Dirac half-metallicity in 2D materials and provides new opportunity to realize high-speed devices with low consumption.

Design of 2D materials - MSi2CxN4-x (M = Cr, Mo, and W; x = 1 and 2) - with tunable electronic and magnetic properties

Two-dimensional (2D) materials have attracted increasing interest in the past decades due to their unique physical and chemical properties for diverse applications. In this work, we present a first-principles design on a novel 2D family, MSi₂C_xN_4-x (M = Cr, Mo, and W; x = 1 and 2), based on density-functional theory (DFT). We find that all MSi₂C_xN_4-x monolayers are stable by investigating their mechanic, dynamic, and thermodynamic properties. Interestingly, we see that the alignment of magnetic moments can be tuned to achieve non-magnetism (NM), ferromagnetism (FM), anti-ferromagnetism (AFM) or paramagnetism (PM) by arranging the positions of carbon atoms in the 2D systems. Accordingly, their electronic properties can be controlled to obtain semiconductor, half-metal, or metal. The FM states in half-metallic 2D systems are contributed to the hole-mediated double exchange, while the AFM states are induced by super-exchange. Our findings show that the physical properties of 2D systems can be tuned by compositional and structural engineering, especially the layer of C atoms, which may provide guidance on the design and fabrication of novel 2D materials with projected properties for multi-functional applications.

Novel topological states of nodal points and nodal rings in 2D planar octagon TiB4

Topological states of matter in two-dimensional (2D) materials have received increasing attention due to their potential applications in nanoscale spintronics. Here, we report the presence of unique topological electronic properties in a 2D planar octagon TiB₄ compound. Particularly, without considering the spin-orbit coupling (SOC), we found that the material showed a coexistence of novel quadratic node (QN), and two different types of nodal rings (NRs), namely type-I and type-II. The protection mechanism of fermions has been fully clarified in this study. Furthermore, these fermions showed clear edge states. It is worth noting that QN had a topological charge of 2 since it is different from linear nodes and exhibit clear Fermi arc edge states. Under lattice strain, we found that the system could further exhibit rich topological phase transition. When SOC was included, we determined that these crossing points open very tiny energy gaps, which were smaller than previously reported 3D and 2D examples. These results show that monolayer TiB₄ is an excellent nodal point and nodal ring semimetal, which also provides a feasible member for studying potential entanglements among multiple fermions.

Two-dimensional magnetic materials: structures, properties and external controls

Since the discovery of intrinsic ferromagnetism in atomically thin Cr2Gr2Te6 and CrI3 in 2017, research on two-dimensional (2D) magnetic materials has become a highlighted topic. Based on 2D magnetic materials and their heterostructures, exotic physical phenomena at the atomically thin limit have been discovered, such as the quantum anomalous Hall effect, magneto-electric multiferroics, and magnon valleytronics. Furthermore, magnetism in these ultrathin magnets can be effectively controlled by external perturbations, such as electric field, strain, doping, chemical functionalization, and stacking engineering. These attributes make 2D magnets ideal platforms for fundamental research and promising candidates for various spintronic applications. This review aims at providing an overview of the structures, properties, and external controls of 2D magnets, as well as the challenges and potential opportunities in this field.

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

van der Waals (vdW) materials exhibit great potential in spintronics, arising from their excellent spin transportation, large spin-orbit coupling, and high-quality interfaces. The recent discovery of intrinsic vdW antiferromagnets and ferromagnets has laid the foundation for the construction of all-vdW spintronic devices, and enables the study of low-dimensional magnetism, which is of both technical and scientific significance. In this review, several representative families of vdW magnets are introduced, followed by a comprehensive summary of the methods utilized in reading out the magnetic states of vdW magnets. Thereafter, it is shown that various electrical, mechanical, and chemical approaches are employed to modulate the magnetism of vdW magnets. Finally, the perspective of vdW magnets in spintronics is discussed and an outlook of future development direction in this field is also proposed.

High-Temperature Quantum Anomalous Hall Insulators in Lithium-Decorated Iron-Based Superconductor Materials

Quantum anomalous Hall (QAH) insulator is the key material to study emergent topological quantum effects, but its ultralow working temperature limits experiments. Here, by first-principles calculations, we find a family of stable two-dimensional (2D) structures generated by lithium decoration of layered iron-based superconductor materials Fe X(X=S,Se,Te), and predict room-temperature ferromagnetic semiconductors together with large-gap high-Chern-number QAH insulators in the 2D materials. The extremely robust ferromagnetic order is induced by the electron injection from Li to Fe and stabilized by strong ferromagnetic kinetic exchange in the 2D Fe layer. While in the absence of spin-orbit coupling (SOC), the ferromagnetism polarizes the system into a half Dirac semimetal state protected by mirror symmetry, the SOC effect results in a spontaneous breaking of mirror symmetry and introduces a Dirac mass term, which creates QAH states with sizable gaps (several tens of meV) and multiple chiral edge modes. We also find a 3D QAH insulator phase featured by a macroscopic number of chiral conduction channels in bulk LiOH-LiFe X. The findings open new opportunities to realize novel QAH physics and applications at high temperatures.

Magnetic and electronic properties of 2D TiX3 (X = F, Cl, Br and I)

A two-step transition in the magnetic state occurs in bilayer TiI₃ under applied strain.