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Dai J, Zhang S, Wang F, Wen L, Sun Y, Ren K, Xu Y, Zeng W, Wang S. A new In Situ Oxidized 2D Layered MnBi 2Te 4 Cathode for High-Performance Aqueous Zinc-Ion Battery. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307033. [PMID: 38552219 DOI: 10.1002/smll.202307033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Revised: 03/14/2024] [Indexed: 08/17/2024]
Abstract
Recently, aqueous zinc ion batteries (AZIBs) with the superior theoretical capacity, high safety, low prices, and environmental protection, have emerged as a contender for advanced energy storage. However, challenges related to cathode materials, such as dissolution, instability, and structural collapse, have hindered the progress of AZIBs. Here, a novel AZIB is constructed using an oxidized 2D layered MnBi2Te4 cathode for the first time. The oxidized MnBi2Te4 cathode with large interlayer spacing and low energy barrier for zinc ion diffusion at 240 °C, exhibited impressive characteristics, including a high reversibility capacity of 393.1 mAh g-1 (0.4 A g-1), outstanding rate performance, and long cycle stability. Moreover, the corresponding aqueous button cell also exhibits excellent electrochemical performance. To demonstrate the application in practice in the realm of flexible wearable electronics, a quasi-solid-state micro ZIB (MZIB) is constructed and shows excellent flexibility and high-temperature stability (the capacity does not significantly degrade when the temperature reaches 100 °C and the bending angle exceeds 150°). This research offers effective tactics for creating high-performance cathode materials for AZIBs.
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Affiliation(s)
- Jiaao Dai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
| | - Shaojun Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
| | - Fei Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
| | - Li Wen
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Yuhao Sun
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
| | - Ke Ren
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
| | - Yaohua Xu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
| | - Wei Zeng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
- East China Institute of Photo-Electron ICs, Suzhou, 215163, China
| | - Siliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province & Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, 230601, China
- East China Institute of Photo-Electron ICs, Suzhou, 215163, China
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2
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Wen L, Zhang Q, Shi J, Wang F, Wang S, Chen Z, Yue Y, Gao Y. Layered Topological Insulator MnBi 2Te 4 as a Cathode for a High Rate Performance Aqueous Zinc-Ion Battery. ACS NANO 2024. [PMID: 38335299 DOI: 10.1021/acsnano.4c01137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Recently, the topological insulator MnBi2Te4 has aroused great attention owing to its exotic quantum phenomena and intriguing device applications, but the superior performances of MnBi2Te4 have not been researched in the field of electrochemistry. By theoretical calculations, it is found that MnBi2Te4 exhibits excellent Zn2+ storage and transport properties. Therefore, it is speculated that MnBi2Te4 has excellent electrochemical performance in zinc-ion batteries (ZIBs). In this research, MnBi2Te4 as a pioneer has been explored in ZIBs, showing surprising electrochemical properties. The MnBi2Te4 electrode displays a high average discharge specific capacity (264.8 mA h g-1 at 0.40 A g-1), a competitive cycle life (88.6% of initial capacity after 400 cycles at 4.00 A g-1), and an excellent rate performance (average capacity retention rate of 95.1% from 0.40 to 8.00 A g-1) owing to the fast ion transport of the conductive topological surface state and dissipationless channel of the edge state. Surprisingly, the quasi-solid-state (QSS) MnBi2Te4/Zn battery delivers excellent Zn2+ storage capability and possesses a capacity retention of 79.9% after 1000 cycles at 4.00 A g-1. In addition, the QSS MnBi2Te4/Zn battery can exhibit excellent performance and the GCD curves maintain stability without distortion deformation even at temperatures of 0 and 75 °C.
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Affiliation(s)
- Li Wen
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Qixiang Zhang
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Junjie Shi
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Fei Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei 230601, China
| | - Siliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei 230601, China
| | - Zhiwei Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei 230601, China
| | - Yang Yue
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Yihua Gao
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
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3
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Li S, Liu T, Liu C, Wang Y, Lu HZ, Xie XC. Progress on the antiferromagnetic topological insulator MnBi 2Te 4. Natl Sci Rev 2024; 11:nwac296. [PMID: 38213528 PMCID: PMC10776361 DOI: 10.1093/nsr/nwac296] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2022] [Revised: 10/18/2022] [Accepted: 11/09/2022] [Indexed: 01/13/2024] Open
Abstract
Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed matter physics. They represent a new class of materials exhibiting nontrivial topological phases, and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic orders. In particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4 from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4 thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.
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Affiliation(s)
- Shuai Li
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- International Quantum Academy, Shenzhen 518048, China
| | - Tianyu Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- International Quantum Academy, Shenzhen 518048, China
| | - Chang Liu
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Yayu Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- International Quantum Academy, Shenzhen 518048, China
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Hefei National Laboratory, Hefei 230088, China
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Hu C, Qian T, Ni N. Recent progress in MnBi 2nTe 3n+1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder. Natl Sci Rev 2024; 11:nwad282. [PMID: 38213523 PMCID: PMC10776370 DOI: 10.1093/nsr/nwad282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 08/19/2023] [Accepted: 09/06/2023] [Indexed: 01/13/2024] Open
Abstract
The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.
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Affiliation(s)
- Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
| | - Tiema Qian
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
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5
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Belrhazi H, Fattouhi M, El Hafidi MY, El Hafidi M. Reconfigurable Skyrmion-Based Logic Gates: Versatile Design and Full-Scale Implementation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3703-3718. [PMID: 38214036 DOI: 10.1021/acsami.3c16542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Herein, we investigate the behavior of skyrmions within a racetrack design incorporating voltage-controlled magnetic anisotropy (VCMA) gates. Our analysis encompassed multiple forces, including spin currents and anisotropy gradients induced by bias voltages. As a result, the efficient control of skyrmion dynamics was achieved across various VCMA gate configurations. Building upon these findings, we propose an efficient approach to reconfigurable skyrmion logic (RSL) in a thin antiferromagnetic (AFM) film through a versatile design. Our RSL harnesses the selective integration of VCMA, spin-polarized currents, and skyrmion-skyrmion (sky-sky) interactions to implement multiple logic gates, including AND, OR, XOR, NOT, NAND, XNOR, and NOR. The design brings a significant advantage with its simplified fabrication process, making the implementation of the RSL practical and accessible for various applications. Furthermore, the RSL enables seamless dynamic switching between logic gates, thereby enhancing its multifunctionality. Additionally, the strategic incorporation of sky-sky interactions and skyrmion-edge repulsion prominently facilitates the realization of complex gates, such as NAND, XNOR, and NOR gates, that typically require intricate design efforts. Hence, this streamlined integration of RSL, coupled with its adaptability to changing computational needs, underscores its potential as a practical solution for implementing high-functionality skyrmion-based logic gates.
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Affiliation(s)
- Hamza Belrhazi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mouad Fattouhi
- Department of Applied Physics, University of Salamanca, 37008 Salamanca, Spain
| | - M Youssef El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mohamed El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
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6
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Bartram FM, Li M, Liu L, Xu Z, Wang Y, Che M, Li H, Wu Y, Xu Y, Zhang J, Yang S, Yang L. Real-time observation of magnetization and magnon dynamics in a two-dimensional topological antiferromagnet MnBi 2Te 4. Sci Bull (Beijing) 2023; 68:2734-2742. [PMID: 37863774 DOI: 10.1016/j.scib.2023.10.003] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2023] [Revised: 07/22/2023] [Accepted: 09/30/2023] [Indexed: 10/22/2023]
Abstract
Atomically thin van der Waals magnetic materials have not only provided a fertile playground to explore basic physics in the two-dimensional (2D) limit but also created vast opportunities for novel ultrafast functional devices. Here we systematically investigate ultrafast magnetization dynamics and spin wave dynamics in few-layer topological antiferromagnetic MnBi2Te4 crystals as a function of layer number, temperature, and magnetic field. We find laser-induced (de)magnetization processes can be used to accurately track the distinct magnetic states in different magnetic field regimes, including showing clear odd-even layer number effects. In addition, strongly field-dependent AFM magnon modes with tens of gigahertz frequencies are optically generated and directly observed in the time domain. Remarkably, we find that magnetization and magnon dynamics can be observed in not only the time-resolved magneto-optical Kerr effect but also the time resolved reflectivity, indicating strong correlation between the magnetic state and electronic structure. These measurements present the first comprehensive overview of ultrafast spin dynamics in this novel 2D antiferromagnet, paving the way for potential applications in 2D antiferromagnetic spintronics and magnonics as well as further studies of ultrafast control of both magnetization and topological quantum states.
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Affiliation(s)
- F Michael Bartram
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Department of Physics, University of Toronto, Toronto M5S 1A7, Canada
| | - Meng Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Liangyang Liu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhiming Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yongchao Wang
- Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - Mengqian Che
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hao Li
- Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yang Wu
- Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084, China; College of Math and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China; RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Jinsong Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China; Hefei National Laboratory, Hefei 230088, China
| | - Shuo Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China; Hefei National Laboratory, Hefei 230088, China
| | - Luyi Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Department of Physics, University of Toronto, Toronto M5S 1A7, Canada; Frontier Science Center for Quantum Information, Beijing 100084, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
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7
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Saxena A, Awana VPS. Growth and characterization of the magnetic topological insulator candidate Mn 2Sb 2Te 5. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:085704. [PMID: 37963405 DOI: 10.1088/1361-648x/ad0c77] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Accepted: 11/14/2023] [Indexed: 11/16/2023]
Abstract
We report a new member of topological insulator (TI) family i.e. Mn2Sb2Te5, which belongs to MnSb2Te4family and is a sister compound of Mn2Bi2Te5. An antiferromagnetic layer of (MnTe)2has been inserted between quintuple layers of Sb2Te3. The crystal structure and chemical composition of as grown Mn2Sb2Te5crystal is experimentally visualized by single crystal x-ray diffractometer and field emission scanning electron microscopy. The valence states of individual constituents i.e., Mn, Sb and Te are ascertained through x-ray photo electron spectroscopy. Different vibrational modes of Mn2Sb2Te5are elucidated through Raman spectroscopy. Temperature-dependent resistivityρ(T) of Mn2Sb2Te5resulted in metallic behavior of the same with an up-turn at below around 20 K. Further, the magneto-transportρ(T) vsHof the same exhibited negative magneto-resistance (MR) at low temperatures below 20 K and small positive at higher temperatures. The low Temperature -ve MR starts decreasing at higher fields. The magnetic moment as a function of temperature at 100 Oe and 1 kOe showed anti-ferromagnetism (AFM) like down turn cusps at around 20 K and 10 K. The isothermal magnetization showed AFM like loops with some embedded ferromagnetic/paramagnetic (PM) domains at 5 K and purely PM like at 100 K. The studied Mn2Sb2Te5clearly exhibited the characteristics of a magnetic TI.
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Affiliation(s)
- Ankush Saxena
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
- CSIR- National Physical Laboratory, New Delhi 110012, India
| | - V P S Awana
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
- CSIR- National Physical Laboratory, New Delhi 110012, India
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8
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Rastogi G, Mohapatra A, Mishra P, Mandal S, Kulkarni R, Ganesan R, Thamizhavel A, Anil Kumar PS. Crossover from gapped-to-gapless Dirac surface states in magnetic topological insulator MnBi 2Te 4. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:085703. [PMID: 37883988 DOI: 10.1088/1361-648x/ad0765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Accepted: 10/26/2023] [Indexed: 10/28/2023]
Abstract
Intrinsic magnetic topological insulators (MTIs) host exotic topological phases such as quantized anomalous Hall insulating phase, arising due to the large magnetic exchange gap. However, the interplay of magnetism and topology in these systems in different temperature regimes remains elusive. In this work, we present the logarithmic temperature-dependence of conductivity for sub-100 nm thick exfoliated flakes of MTI MnBi2Te4in the presence of out-of-plane magnetic fields and extracted the linear slope,κ. We observed a characteristic change,Δκ∼-0.5in the low-temperature regime, indicating the gapped Dirac surface state according to Lu-Shen theory. We also report the recovery of topological properties in the system via the weak-antilocalization effect in the vicinity of antiferromagnetic to paramagnetic transition and in the paramagnetic regime. Hikami-Larkin-Nagaoka analysis suggested the presence of topological surface states. Therefore, our study helps in understanding how intrinsic magnetism masks topological properties in an MTI as long as magnetic ordering persists.
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Affiliation(s)
- Gagan Rastogi
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Abhinab Mohapatra
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Pramita Mishra
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shoubhik Mandal
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Ruta Kulkarni
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India
| | - R Ganesan
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - A Thamizhavel
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India
| | - P S Anil Kumar
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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9
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Deng H, Zhang Y, Yang X, Yu Q, Wang P, Yang Z, Dai Y, Pang X, Wang X, Wu J, Zhou P. Magnetic Topological Insulator MnBi 2Te 4 Nanosheets for Femtosecond Pulse Generation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47250-47259. [PMID: 37751475 DOI: 10.1021/acsami.3c09544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
The van der Waals layered material MnBi2Te4, as a magnetic topological insulator, has attracted tremendous interest for novel physics research in the fields of condensed matter physics and materials science. However, the nonlinear optical properties of MnBi2Te4 and its applications in ultrafast optics have rarely been explored. In this study, high-quality MnBi2Te4 nanosheets have been successfully synthesized by the self-flux method. The morphology, chemical composition, magnetic properties, and nonlinear optical characteristics were systematically investigated. The magnetic transition of MnBi2Te4 was confirmed by a low-temperature spatially resolved spectroscopic technique. The saturable absorption property of MnBi2Te4 was measured by a balanced twin-detector system with a modulation depth of 4.5% and a saturation optical intensity of 2.35 GW/cm2. Furthermore, by inserting the MnBi2Te4-based saturable absorber, a soliton mode-locking laser operating at 1558.8 nm was obtained with a pulse duration of 331 fs. This research will pave the way for applications of the magnetic TI MnBi2Te4 in nonlinear optics and photonics.
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Affiliation(s)
- Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Yan Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
| | - Xiaoxin Yang
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
| | - Pengdong Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
| | - Zixin Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Yongping Dai
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
- Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiuyang Pang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xiao Wang
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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10
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Fonseca J, Diederich GM, Ovchinnikov D, Cai J, Wang C, Yan J, Xiao D, Xu X. Anomalous Second Harmonic Generation from Atomically Thin MnBi 2Te 4. NANO LETTERS 2022; 22:10134-10139. [PMID: 36475690 DOI: 10.1021/acs.nanolett.2c04010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
MnBi2Te4 is a van der Waals topological insulator with intrinsic intralayer ferromagnetic exchange and A-type antiferromagnetic interlayer coupling. Theoretically, it belongs to a class of structurally centrosymmetric crystals whose layered antiferromagnetic order breaks inversion symmetry for even layer numbers, making optical second harmonic generation (SHG) an ideal probe of the coupling between the crystal and magnetic structures. Here, we perform magnetic field and temperature-dependent SHG measurements on MnBi2Te4 flakes ranging from bulk to monolayer thickness. We find that the dominant SHG signal from MnBi2Te4 is unexpectedly unrelated to both magnetic state and layer number. We suggest that surface SHG is the likely source of the observed strong SHG, whose symmetry matches that of the MnBi2Te4-vacuum interface. Our results highlight the importance of considering the surface contribution to inversion symmetry-breaking in van der Waals centrosymmetric magnets.
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Affiliation(s)
- Jordan Fonseca
- Department of Physics, University of Washington, Seattle, Washington98195, United States
| | - Geoffrey M Diederich
- Department of Physics, University of Washington, Seattle, Washington98195, United States
- Intelligence Community Postdoctoral Research Fellowship Program, University of Washington, Seattle, Washington98195, United States
| | - Dmitry Ovchinnikov
- Department of Physics, University of Washington, Seattle, Washington98195, United States
| | - Jiaqi Cai
- Department of Physics, University of Washington, Seattle, Washington98195, United States
| | - Chong Wang
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington98195, United States
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee37996, United States
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, Washington98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington98195, United States
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, Washington98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington98195, United States
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11
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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12
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Tai L, Dai B, Li J, Huang H, Chong SK, Wong KL, Zhang H, Zhang P, Deng P, Eckberg C, Qiu G, He H, Wu D, Xu S, Davydov A, Wu R, Wang KL. Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect. ACS NANO 2022; 16:17336-17346. [PMID: 36126321 DOI: 10.1021/acsnano.2c08155] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In transport, the topological Hall effect (THE) presents itself as nonmonotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when the anomalous Hall effect (AHE) is also present, the coexistence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here, we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE" or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE + AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: (1) minor loops, (2) temperature dependence, and (3) gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". In addition, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the nonmonotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise caution and use these methods for careful examination in order to ascertain the genuine THE.
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Affiliation(s)
- Lixuan Tai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Jie Li
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
| | - Hanshen Huang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Su Kong Chong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Kin L Wong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Huairuo Zhang
- Theiss Research, Inc., La Jolla, California 92037, United States
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Peng Zhang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Peng Deng
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Christopher Eckberg
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
- Fibertek, Inc., Herndon, Virginia 20171, United States
- US Army Research Laboratory, Adelphi, Maryland 20783, United States
- US Army Research Laboratory, Playa Vista, California 90094, United States
| | - Gang Qiu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Haoran He
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Di Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Shijie Xu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
- Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Albert Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
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13
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Xu R, Bai Y, Zhou J, Li J, Gu X, Qin N, Yin Z, Du X, Zhang Q, Zhao W, Li Y, Wu Y, Ding C, Wang L, Liang A, Liu Z, Xu Y, Feng X, He K, Chen Y, Yang L. Evolution of the Electronic Structure of Ultrathin MnBi 2Te 4 Films. NANO LETTERS 2022; 22:6320-6327. [PMID: 35894743 DOI: 10.1021/acs.nanolett.2c02034] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as the quantum anomalous Hall effect and the axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator type with a large energy gap to one with in-gap topological surface states, which is, however, still in drastic contrast to the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin-film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.
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Affiliation(s)
- Runzhe Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yunhe Bai
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jingsong Zhou
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jiaheng Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Xu Gu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Na Qin
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhongxu Yin
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Xian Du
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Qinqin Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wenxuan Zhao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yidian Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yang Wu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Cui Ding
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Lili Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Aiji Liang
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Xiao Feng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Ke He
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Yulin Chen
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
- Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, U.K
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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14
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Li G, Wu X, Gao Y, Ma X, Hou F, Cheng H, Huang Q, Wu YC, DeCapua MC, Zhang Y, Lin J, Liu C, Huang L, Zhao Y, Yan J, Huang M. Observation of Ultrastrong Coupling between Substrate and the Magnetic Topological Insulator MnBi 2Te 4. NANO LETTERS 2022; 22:3856-3864. [PMID: 35503660 DOI: 10.1021/acs.nanolett.1c04194] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The intrinsic magnetic topological insulator MnBi2Te4 has attracted significant interest recently as a promising platform for exploring exotic quantum phenomena. Here we report that, when atomically thin MnBi2Te4 is deposited on a substrate such as silicon oxide or gold, there is a very strong mechanical coupling between the atomic layer and the supporting substrate. This is manifested as an intense low-frequency breathing Raman mode that is present even for monolayer MnBi2Te4. Interestingly, this coupling turns out to be stronger than the interlayer coupling between the MnBi2Te4 atomic layers. We further found that these low-energy breathing modes are highly sensitive to sample degradation, and they become drastically weaker upon ambient air exposure. This is in contrast to the higher energy optical phonon modes which are much more robust, suggesting that the low-energy Raman modes found here can be an effective indicator of sample quality.
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Affiliation(s)
- Gaomin Li
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
- Department of Physics, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Xiaohua Wu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Yifan Gao
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Xiaoming Ma
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Fuchen Hou
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Hanyan Cheng
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Qiaoling Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Yueh-Chun Wu
- Department of Physics, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Matthew C DeCapua
- Department of Physics, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Yujun Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Chang Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Li Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Yue Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Jun Yan
- Department of Physics, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
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15
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Rodriguez-Vega M, Lin ZX, Leonardo A, Ernst A, Vergniory MG, Fiete GA. Light-Driven Topological and Magnetic Phase Transitions in Thin Layer Antiferromagnets. J Phys Chem Lett 2022; 13:4152-4158. [PMID: 35507411 PMCID: PMC9109223 DOI: 10.1021/acs.jpclett.2c00070] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Accepted: 04/19/2022] [Indexed: 05/19/2023]
Abstract
We theoretically study the effect of low-frequency light pulses in resonance with phonons in the topological and magnetically ordered two-septuple layer (2-SL) MnBi2Te4 (MBT) and MnSb2Te4 (MST). These materials share symmetry properties and an antiferromagnetic ground state in pristine form but present different magnetic exchange interactions. In both materials, shear and breathing Raman phonons can be excited via nonlinear interactions with photoexcited infrared phonons using intense laser pulses that can be attained in the current experimental setups. The light-induced transient lattice distortions lead to a change in the sign of the effective interlayer exchange interaction and magnetic order accompanied by a topological band transition. Furthermore, we show that moderate antisite disorder, typically present in MBT and MST samples, can facilitate such an effect. Therefore, our work establishes 2-SL MBT and MST as candidate platforms for achieving non-equilibrium magneto-topological phase transitions.
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Affiliation(s)
- Martin Rodriguez-Vega
- Theoretical
Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Ze-Xun Lin
- Department
of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
- Department
of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Aritz Leonardo
- Donostia
International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastian, Spain
- EHU
Quantum Center, University of the Basque
Country UPV/EHU, 48940 Leioa, Spain
| | - Arthur Ernst
- Institut
für Theoretische Physik, Johannes
Kepler Universität, A 4040 Linz, Austria
- Max-Planck-Institut
für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
| | - Maia G. Vergniory
- Donostia
International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastian, Spain
- Max
Planck Institute for Chemical Physics of Solids, Dresden D-01187, Germany
| | - Gregory A. Fiete
- Department
of Physics, Northeastern University, Boston, Massachusetts 02115, United States
- Department
of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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16
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Zhang S, Wu H, Yang L, Zhang G, Xie Y, Zhang L, Zhang W, Chang H. Two-dimensional magnetic atomic crystals. MATERIALS HORIZONS 2022; 9:559-576. [PMID: 34779810 DOI: 10.1039/d1mh01155c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.
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Affiliation(s)
- Shanfei Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yuanmiao Xie
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Liang Zhang
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
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17
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Akhgar G, Li Q, Di Bernardo I, Trang CX, Liu C, Zavabeti A, Karel J, Tadich A, Fuhrer MS, Edmonds MT. Formation of a Stable Surface Oxide in MnBi 2Te 4 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6102-6108. [PMID: 35050569 DOI: 10.1021/acsami.1c19089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Understanding the air stability of MnBi2Te4 thin films is crucial for the development and long-term operation of electronic devices based on magnetic topological insulators. In the present work, we study MnBi2Te4 thin films upon exposure to the atmosphere using a combination of synchrotron-based photoelectron spectroscopy, room-temperature electrical transport, and atomic force microscopy to determine the oxidation process. After 2 days of air exposure, a 2 nm thick oxide passivates the surface, corresponding to the oxidation of only the top two surface layers, with the underlying layers preserved. This protective oxide layer results in samples that still exhibit metallic conduction even after several days of air exposure. Furthermore, the work function decreases from 4.4 eV for pristine MnBi2Te4 to 4.0 eV after the formation of the oxide, along with only a small shift in the core levels, indicating minimal doping as a result of air exposure. With the oxide confined to the top surface layers, and the underlying layers preserved, it may be possible to explore new avenues in how to handle, prepare, and passivate future MnBi2Te4 devices.
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Affiliation(s)
- Golrokh Akhgar
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
| | - Qile Li
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
| | - Iolanda Di Bernardo
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
| | - Chi Xuan Trang
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
| | - Chang Liu
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
| | - Ali Zavabeti
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Julie Karel
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
| | - Anton Tadich
- Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
| | - Mark T Edmonds
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
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18
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Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications. COATINGS 2022. [DOI: 10.3390/coatings12020122] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) van der Waals (vdW) magnetic materials are considered to be ideal candidates for the fabrication of spintronic devices because of their low dimensionality, allowing the quantization of electronic states and more degrees of freedom for device modulation. With the discovery of few-layer Cr2Ge2Te6 and monolayer CrI3 ferromagnets, the magnetism of 2D vdW materials is becoming a research focus in the fields of material science and physics. In theory, taking the Heisenberg model with finite-range exchange interactions as an example, low dimensionality and ferromagnetism are in competition. In other words, it is difficult for 2D materials to maintain their magnetism. However, the introduction of anisotropy in 2D magnetic materials enables the realization of long-range ferromagnetic order in atomically layered materials, which may offer new effective means for the design of 2D ferromagnets with high Curie temperature. Herein, current advances in the field of 2D vdW magnetic crystals, as well as intrinsic and induced ferromagnetism or antiferromagnetism, physical properties, device fabrication, and potential applications, are briefly summarized and discussed.
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19
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Yu JH, Zhang WW, Zhu BL, He PZ, Cui SX. Theoretical Studies of Magnetic Properties of Acetic Acid Bridged Binuclear Cu(II) Complex {Cu2(μ2-O2CCH3)4} (N2C4H4)2. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A 2022. [DOI: 10.1134/s0036024421150255] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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20
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Su SH, Chang JT, Chuang PY, Tsai MC, Peng YW, Lee MK, Cheng CM, Huang JCA. Epitaxial Growth and Structural Characterizations of MnBi 2Te 4 Thin Films in Nanoscale. NANOMATERIALS 2021; 11:nano11123322. [PMID: 34947669 PMCID: PMC8703544 DOI: 10.3390/nano11123322] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/30/2021] [Revised: 12/02/2021] [Accepted: 12/02/2021] [Indexed: 11/30/2022]
Abstract
The intrinsic magnetic topological insulator MnBi2Te4 has attracted much attention due to its special magnetic and topological properties. To date, most reports have focused on bulk or flake samples. For material integration and device applications, the epitaxial growth of MnBi2Te4 film in nanoscale is more important but challenging. Here, we report the growth of self-regulated MnBi2Te4 films by the molecular beam epitaxy. By tuning the substrate temperature to the optimal temperature for the growth surface, the stoichiometry of MnBi2Te4 becomes sensitive to the Mn/Bi flux ratio. Excessive and deficient Mn resulted in the formation of a MnTe and Bi2Te3 phase, respectively. The magnetic measurement of the 7 SL MnBi2Te4 film probed by the superconducting quantum interference device (SQUID) shows that the antiferromagnetic order occurring at the Néel temperature 22 K is accompanied by an anomalous magnetic hysteresis loop along the c-axis. The band structure measured by angle-resolved photoemission spectroscopy (ARPES) at 80 K reveals a Dirac-like surface state, which indicates that MnBi2Te4 has topological insulator properties in the paramagnetic phase. Our work demonstrates the key growth parameters for the design and optimization of the synthesis of nanoscale MnBi2Te4 films, which are of great significance for fundamental research and device applications involving antiferromagnetic topological insulators.
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Affiliation(s)
- Shu-Hsuan Su
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan; (S.-H.S.); (J.-T.C.); (P.-Y.C.); (M.-C.T.); (Y.-W.P.); (M.K.L.)
| | - Jen-Te Chang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan; (S.-H.S.); (J.-T.C.); (P.-Y.C.); (M.-C.T.); (Y.-W.P.); (M.K.L.)
| | - Pei-Yu Chuang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan; (S.-H.S.); (J.-T.C.); (P.-Y.C.); (M.-C.T.); (Y.-W.P.); (M.K.L.)
| | - Ming-Chieh Tsai
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan; (S.-H.S.); (J.-T.C.); (P.-Y.C.); (M.-C.T.); (Y.-W.P.); (M.K.L.)
| | - Yu-Wei Peng
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan; (S.-H.S.); (J.-T.C.); (P.-Y.C.); (M.-C.T.); (Y.-W.P.); (M.K.L.)
| | - Min Kai Lee
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan; (S.-H.S.); (J.-T.C.); (P.-Y.C.); (M.-C.T.); (Y.-W.P.); (M.K.L.)
| | - Cheng-Maw Cheng
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106335, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
- Correspondence: (C.-M.C.); (J.-C.A.H.)
| | - Jung-Chung Andrew Huang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan; (S.-H.S.); (J.-T.C.); (P.-Y.C.); (M.-C.T.); (Y.-W.P.); (M.K.L.)
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
- Department of Applied Physics, National University of Kaohsiung, Kaohsiung, 811, Taiwan
- Correspondence: (C.-M.C.); (J.-C.A.H.)
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21
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Liu G, Chen XQ, Liu B, Ren W, Cheng HM. Six-membered-ring inorganic materials: definition and prospects. Natl Sci Rev 2021; 8:nwaa248. [PMID: 34691562 PMCID: PMC8294346 DOI: 10.1093/nsr/nwaa248] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Revised: 07/17/2020] [Accepted: 08/06/2020] [Indexed: 11/17/2022] Open
Abstract
The six-membered ring (SMR) is a common structure unit for numerous material systems. These materials include, but are not limited to, the typical two-dimensional materials such as graphene, h-BN, and transition metal dichalcogenides, as well as three-dimensional materials such as beryllium, magnesium, MgB2 and Bi2Se3. Although many of these materials have already become 'stars' in materials science and condensed-matter physics, little attention has been paid to the roles of the SMR unit across a wide range of compositions and structures. In this article, we systematically analyze these materials with respect to their very basic SMR structural unit, which has been found to play a deterministic role in the occurrence of many intriguing properties and phenomena, such as Dirac electronic and phononic spectra, superconductivity and topology. As a result, we have defined this group of materials as SMR inorganic materials, opening up a new perspective on materials research and development. With their unique properties, SMR materials deserve wide attention and in-depth investigation from materials design, new physical discoveries to target-wizard applications. It is expected that SMR materials will find niche applications in next-generation information technology, renewable energy, space, etc.
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Affiliation(s)
- Gang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
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22
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Kolincio KK, Roman M, Klimczuk T. Enhanced Mobility and Large Linear Nonsaturating Magnetoresistance in the Magnetically Ordered States of TmNiC_{2}. PHYSICAL REVIEW LETTERS 2020; 125:176601. [PMID: 33156671 DOI: 10.1103/physrevlett.125.176601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2020] [Revised: 09/02/2020] [Accepted: 09/11/2020] [Indexed: 06/11/2023]
Abstract
We have studied the magnetic, magnetotransport, and galvanomagnetic properties of TmNiC_{2}. We find that the antiferromagnetic and field induced metamagnetic and ferromagnetic orderings do not suppress the charge density wave. The persistence of Fermi surface pockets, open as a result of imperfect nesting accompanying the Peierls transition, results in an electronic carriers mobility of the order of 4×10^{3} cm^{2} V^{-1} s^{-1} in ferromagnetic state, without any signatures for a significant deterioration of nesting properties. This is independently evidenced by high, nonsaturating linear magnetoresistance reaching 440% at T=2 K and an analysis of the Hall conductivity. We thus demonstrate that, the coexistence of charge density wave and magnetism provides an alternative route to maintain high electronic mobility in the magnetically ordered state.
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Affiliation(s)
- Kamil K Kolincio
- Faculty of Applied Physics and Mathematics, Gdansk University of Technology, Narutowicza 11/12, 80-233 Gdansk, Poland
| | - Marta Roman
- Faculty of Applied Physics and Mathematics, Gdansk University of Technology, Narutowicza 11/12, 80-233 Gdansk, Poland
| | - Tomasz Klimczuk
- Faculty of Applied Physics and Mathematics, Gdansk University of Technology, Narutowicza 11/12, 80-233 Gdansk, Poland
- Advanced Materials Centre, Gdansk University of Technology, ul. Narutowicza 11/12, 80-233 Gdansk, Poland
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23
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Hou F, Yao Q, Zhou CS, Ma XM, Han M, Hao YJ, Wu X, Zhang Y, Sun H, Liu C, Zhao Y, Liu Q, Lin J. Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi 2Te 4. ACS NANO 2020; 14:11262-11272. [PMID: 32813492 DOI: 10.1021/acsnano.0c03149] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
MnBi2Te4 is an antiferromagnetic topological insulator that has stimulated intense interest due to its exotic quantum phenomena and promising device applications. The surface structure is a determinant factor to understand the magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here we discovered a surface collapse and reconstruction of few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as a Mn-doped Bi2Te3 quintuple layer and a MnxBiyTe double layer with a clear van der Waals gap in between. Combined with first-principles calculations, such surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and the tellurium vacancy in the exfoliated surface, which is further supported by in situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi2Te4 and provide an insightful perspective on the surface-related quantum measurements in MnBi2Te4 few-layer devices.
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Affiliation(s)
- Fuchen Hou
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
- Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qiushi Yao
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
| | - Chun-Sheng Zhou
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
| | - Xiao-Ming Ma
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
| | - Mengjiao Han
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
- Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yu-Jie Hao
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
| | - Xuefeng Wu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
| | - Yu Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
- Department of Physics, University of Hong Kong, Hong Kong, P. R. China
| | - Hongyi Sun
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
| | - Chang Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Yue Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Qihang Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory for Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, P. R. China
- Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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24
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Hu C, Ding L, Gordon KN, Ghosh B, Tien HJ, Li H, Linn AG, Lien SW, Huang CY, Mackey S, Liu J, Reddy PVS, Singh B, Agarwal A, Bansil A, Song M, Li D, Xu SY, Lin H, Cao H, Chang TR, Dessau D, Ni N. Realization of an intrinsic ferromagnetic topological state in MnBi 8Te 13. SCIENCE ADVANCES 2020; 6:eaba4275. [PMID: 32743072 PMCID: PMC7375807 DOI: 10.1126/sciadv.aba4275] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2019] [Accepted: 06/09/2020] [Indexed: 05/13/2023]
Abstract
Novel magnetic topological materials pave the way for studying the interplay between band topology and magnetism. However, an intrinsically ferromagnetic topological material with only topological bands at the charge neutrality energy has so far remained elusive. Using rational design, we synthesized MnBi8Te13, a natural heterostructure with [MnBi2Te4] and [Bi2Te3] layers. Thermodynamic, transport, and neutron diffraction measurements show that despite the adjacent [MnBi2Te4] being 44.1 Å apart, MnBi8Te13 manifests long-range ferromagnetism below 10.5 K with strong coupling between magnetism and charge carriers. First-principles calculations and angle-resolved photoemission spectroscopy measurements reveal it is an axion insulator with sizable surface hybridization gaps. Our calculations further demonstrate the hybridization gap persists in the two-dimensional limit with a nontrivial Chern number. Therefore, as an intrinsic ferromagnetic axion insulator with clean low-energy band structures, MnBi8Te13 serves as an ideal system to investigate rich emergent phenomena, including the quantized anomalous Hall effect and quantized magnetoelectric effect.
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Affiliation(s)
- Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Lei Ding
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Kyle N. Gordon
- Department of Physics, University of Colorado, Boulder, CO 80309, USA
| | - Barun Ghosh
- Department of Physics, Indian Institute of Technology-Kanpur, Kanpur 208016, India
| | - Hung-Ju Tien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Haoxiang Li
- Department of Physics, University of Colorado, Boulder, CO 80309, USA
| | - A. Garrison Linn
- Department of Physics, University of Colorado, Boulder, CO 80309, USA
| | - Shang-Wei Lien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Cheng-Yi Huang
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Scott Mackey
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Jinyu Liu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | | | - Bahadur Singh
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology-Kanpur, Kanpur 208016, India
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Miao Song
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA
| | - Dongsheng Li
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Huibo Cao
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), Tainan 701, Taiwan
- Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan
| | - Dan Dessau
- Department of Physics, University of Colorado, Boulder, CO 80309, USA
- Center for Experiments on Quantum Materials, University of Colorado, Boulder, CO 80309, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
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25
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Yuan Y, Wang X, Li H, Li J, Ji Y, Hao Z, Wu Y, He K, Wang Y, Xu Y, Duan W, Li W, Xue QK. Electronic States and Magnetic Response of MnBi 2Te 4 by Scanning Tunneling Microscopy and Spectroscopy. NANO LETTERS 2020; 20:3271-3277. [PMID: 32298117 DOI: 10.1021/acs.nanolett.0c00031] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, the quantum anomalous Hall effect and axion insulator state were observed in odd and even layers of MnBi2Te4, respectively. Here, we employ low-temperature scanning tunneling microscopy to study the electronic properties of MnBi2Te4. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi2Te4 are different from those of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure is presumably related to the modification of crystalline structure during sample cleaving and reorientation of the magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The electronic structures fluctuate at atomic scale on the surface, which can affect the magnetism of MnBi2Te4.
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Affiliation(s)
- Yonghao Yuan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Xintong Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Hao Li
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
- Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Jiaheng Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Yu Ji
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Zhenqi Hao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Yang Wu
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Ke He
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Yayu Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Yong Xu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Wei Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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26
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Ge J, Liu Y, Li J, Li H, Luo T, Wu Y, Xu Y, Wang J. High-Chern-number and high-temperature quantum Hall effect without Landau levels. Natl Sci Rev 2020; 7:1280-1287. [PMID: 34692156 PMCID: PMC8289033 DOI: 10.1093/nsr/nwaa089] [Citation(s) in RCA: 79] [Impact Index Per Article: 19.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Revised: 04/27/2020] [Accepted: 04/27/2020] [Indexed: 11/22/2022] Open
Abstract
The quantum Hall effect (QHE) with quantized Hall resistance of h/νe2 started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C| = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C > 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.
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Affiliation(s)
- Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yanzhao Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Jiaheng Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hao Li
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Tianchuang Luo
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yang Wu
- Tsinghua-Foxconn Nanotechnology Research Center and Department of Physics, Tsinghua University, Beijing 100084, China
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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