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Sharma M, Mazumder N, Ajayan PM, Deb P. Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:283001. [PMID: 38574668 DOI: 10.1088/1361-648x/ad3abf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 04/04/2024] [Indexed: 04/06/2024]
Abstract
Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.
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Affiliation(s)
- Monika Sharma
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
| | - Nirmal Mazumder
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, United States of America
| | - Pritam Deb
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
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Noureen S, Rehman SU, Batool SM, Ali J, Zhang Q, Batool SS, Wang Y, Li C. Tailoring Bi 2Se 3 Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8158-8168. [PMID: 38301155 DOI: 10.1021/acsami.3c15315] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Layered semiconductors of the V-VI group have attracted considerable attention in optoelectronic applications owing to their atomically thin structures. They offer thickness-dependent optical and electronic properties, promising ultrafast response time, and high sensitivity. Compared to the bulk, 2D bismuth selenide (Bi2Se3) is recently considered a highly promising material. In this study, 2D nanosheets are synthesized by prolonged sonication in two different solvents, such as N-methyl-2-pyrrolidone (NMP) and chitosan-acetic acid solution (CS-HAc), using the liquid-phase exfoliation (LPE) method. X-ray diffraction confirms the amorphous nature of exfoliated 2D nanosheets with maximum peak intensity at the same position (015) crystal plane as that obtained in its bulk counterpart. SEM confirms the thin 2D nanosheet-like morphology. Successful exfoliation of Bi2Se3 nanosheets up to five layers is achieved using CS-HAc solvent. The as-synthesized 2D nanosheets in different solvents are employed to fabricate the photodetector. At minimum selected power density, the photodetector fabricated using exfoliated ultrathin 2D nanosheets exhibits the highest range of responsivity, varying from 15 to 2.5 mA/W, and detectivity ranging from 2.83 × 109 to 6.37 × 107. Ultrathin 2D Bi2Se3 nanosheets have fast rise and fall times, ranging from 0.01 to 0.12 and 0.01 to 0.06 s, respectively, at different wavelengths. Ultrathin Bi2Se3 nanosheets have improved photodetection parameters as compared to multilayered nanosheets due to the high surface to volume ratio, reduced recombination and trapping of charge carrier, improved carrier confinement, and faster carrier transport due to the thin layer.
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Affiliation(s)
- Sadaf Noureen
- School of Science, Minzu University of China, Beijing 100081, China
- Optoelectronic Research Laboratory (OERL), Department of Physics, COMSATS University Islamabad, Park Road, Chak Shahzad, Islamabad 45550, Pakistan
| | - Sajid Ur Rehman
- School of Science, Minzu University of China, Beijing 100081, China
| | - Syeda Maria Batool
- Electric Material and Nanotechnology Lab, North Dakota State University, Fargo, North Dakota 58102, United States
| | - Junaid Ali
- Optoelectronic Research Laboratory (OERL), Department of Physics, COMSATS University Islamabad, Park Road, Chak Shahzad, Islamabad 45550, Pakistan
| | - Qifeng Zhang
- Electric Material and Nanotechnology Lab, North Dakota State University, Fargo, North Dakota 58102, United States
| | - Syeda Sitwat Batool
- School of Science, Minzu University of China, Beijing 100081, China
- Optoelectronic Research Laboratory (OERL), Department of Physics, COMSATS University Islamabad, Park Road, Chak Shahzad, Islamabad 45550, Pakistan
| | - Yang Wang
- School of Science, Minzu University of China, Beijing 100081, China
- Optoelectronics Research Center, Minzu University of China, Beijing 100081, China
| | - Chuanbo Li
- School of Science, Minzu University of China, Beijing 100081, China
- Optoelectronics Research Center, Minzu University of China, Beijing 100081, China
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Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
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Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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Wang X, Tang Y, Wang W, Zhao H, Song Y, Kang C, Wang K. Fabrication and Characterization of a Self-Powered n-Bi2Se3/p-Si Nanowire Bulk Heterojunction Broadband Photodetector. NANOMATERIALS 2022; 12:nano12111824. [PMID: 35683678 PMCID: PMC9182573 DOI: 10.3390/nano12111824] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 05/24/2022] [Accepted: 05/24/2022] [Indexed: 02/04/2023]
Abstract
In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its responsivity reaches its highest value of 84.3 mA/W at 390 nm. In comparison to other Bi2Se3/Si photodetectors previously reported, its infrared detection length is the second longest and its response speed is the third fastest. Before the fabrication of the photodetector, we optimized the growth parameter of the Bi2Se3 film and the best Bi2Se3 film with atomic steps could finally be achieved. The electrical property measurement conducted by the physical property measurement system (PPMS) showed that the grown Bi2Se3 film was n-type conductive and had unique topological insulator properties, such as a metallic state, weak anti-localization (WAL) and linear magnetic resistance (LMR). Subsequently, we fabricated Si NWs by the metal-assisted chemical etching (MACE) method. The interspace between Si NWs and the height of Si NWs could be tuned by Ag deposition and chemical etching times, respectively. Finally, Si NWs fabricated with the Ag deposition time of 60 s and the etching time of 10 min was covered by the best Bi2Se3 film to be processed for the photodetector. The primary n-Bi2Se3/p-Si NWs photodetector that we fabricated can work in a self-powered mode and it has a broadband detection range and fast response speed, which indicates that it can serve as a promising silicon-based near- and mid-infrared photodetector.
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Affiliation(s)
- Xuan Wang
- Henan Province Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China; (X.W.); (Y.T.); (W.W.); (Y.S.)
| | - Yehua Tang
- Henan Province Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China; (X.W.); (Y.T.); (W.W.); (Y.S.)
| | - Wanping Wang
- Henan Province Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China; (X.W.); (Y.T.); (W.W.); (Y.S.)
| | - Hao Zhao
- School of Physics and Electronics, Henan University, Kaifeng 475004, China;
| | - Yanling Song
- Henan Province Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China; (X.W.); (Y.T.); (W.W.); (Y.S.)
| | - Chaoyang Kang
- Henan Province Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China; (X.W.); (Y.T.); (W.W.); (Y.S.)
- Correspondence: (C.K.); (K.W.)
| | - Kefan Wang
- Henan Province Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China; (X.W.); (Y.T.); (W.W.); (Y.S.)
- Correspondence: (C.K.); (K.W.)
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Abstract
2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.
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Affiliation(s)
- Fakun K. Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Sijie J. Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Y. Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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Huang Y, Bai G, Zhao Y, Liu Y, Xu S, Hao J. Lanthanide-Doped Topological Nanosheets with Enhanced Near-Infrared Photothermal Performance for Energy Conversion. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43094-43103. [PMID: 34460241 DOI: 10.1021/acsami.1c12562] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional inorganic semiconductor materials have aroused tremendous research interest and found their potential in resolving the present urgent global issues, such as cancer therapy and fresh water shortage. Particularly, the near-infrared (NIR) photothermal conversion efficiency is a significant parameter in photothermal therapy. However, lack of an effective improvement strategy and their relatively low NIR phothermal conversion efficiency would restrict their wide and further application. Here, this work reports that enhanced NIR photothermal conversion is achieved in topological Bi2Se3 nanosheets by introducing a lanthanide dopant. Specifically, lanthanide Pr-doped Bi2Se3 nanosheets possess a photothermal conversion efficiency of 49.5%, which is higher than those of undoped Bi2Se3 nanosheets (31.0%) and numerous reported photothermal materials. The electronic structure of Pr-doped Bi2Se3 nanosheets was also analyzed by first-principles simulation. Furthermore, an interfacial evaporation system based on the developed nanosheets has been established, demonstrating a superior solar-thermal conversion efficiency of 91.5% and a water evaporation rate of 1.669 kg m-2 h-1 under 1 sun irradiation. The present work would provide new insights for the increase in the efficiency of photothermal materials.
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Affiliation(s)
- Youqiang Huang
- College of Materials and Chemistry, China Jiliang University, Hangzhou 310018, People's Republic of China
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Gongxun Bai
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Yingjie Zhao
- College of Materials and Chemistry, China Jiliang University, Hangzhou 310018, People's Republic of China
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Yuan Liu
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Shiqing Xu
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, People's Republic of China
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Alzakia FI, Tan SC. Liquid-Exfoliated 2D Materials for Optoelectronic Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003864. [PMID: 34105282 PMCID: PMC8188210 DOI: 10.1002/advs.202003864] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2020] [Revised: 01/19/2021] [Indexed: 05/14/2023]
Abstract
Two-dimensional (2D) materials have attracted tremendous research attention in recent days due to their extraordinary and unique properties upon exfoliation from the bulk form, which are useful for many applications such as electronics, optoelectronics, catalysis, etc. Liquid exfoliation method of 2D materials offers a facile and low-cost route to produce large quantities of mono- and few-layer 2D nanosheets in a commercially viable way. Optoelectronic devices such as photodetectors fabricated from percolating networks of liquid-exfoliated 2D materials offer advantages compared to conventional devices, including low cost, less complicated process, and higher flexibility, making them more suitable for the next generation wearable devices. This review summarizes the recent progress on metal-semiconductor-metal (MSM) photodetectors fabricated from percolating network of 2D nanosheets obtained from liquid exfoliation methods. In addition, hybrids and mixtures with other photosensitive materials, such as quantum dots, nanowires, nanorods, etc. are also discussed. First, the various methods of liquid exfoliation of 2D materials, size selection methods, and photodetection mechanisms that are responsible for light detection in networks of 2D nanosheets are briefly reviewed. At the end, some potential strategies to further improve the performance the devices are proposed.
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Affiliation(s)
- Fuad Indra Alzakia
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
| | - Swee Ching Tan
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
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Hwang Y, Hwang YH, Choi KW, Lee S, Kim S, Park SJ, Ju BK. Highly stabilized flexible transparent capacitive photodetector based on silver nanowire/graphene hybrid electrodes. Sci Rep 2021; 11:10499. [PMID: 34006933 PMCID: PMC8131746 DOI: 10.1038/s41598-021-88730-6] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2021] [Accepted: 04/12/2021] [Indexed: 11/21/2022] Open
Abstract
The need for photodetectors in various fields has gradually emerged, and several studies in this area are therefore being conducted. For photodetectors to be used in various environments, their transparency, flexibility, and durability must be ensured. However, the development of flexible photodetectors based on the current measurement techniques of conventional photodetectors has been difficult owing to the limitations of semiconductor materials. In this study, a new type of flexible and transparent capacitive photodetector was fabricated to address the shortcomings of conventional photodetectors. In addition, by introducing graphene electrodes to a new type of manufactured photodetector, devices with excellent overall chemical, thermal, and mechanical durability have been developed. Compared to photodetectors based on pristine Ag nanowire (AgNW) electrodes, AgNW/graphene hybrid electrode-based photodetectors exhibit a 20% higher photosensitivity. Also, the hybrid AgNW/graphene electrode on the dielectric layer exhibited low sheet resistance (~ 8 Ω/sq) and relatively high transmittance (~ 45%).
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Affiliation(s)
- Yooji Hwang
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seoul, 02841, Republic of Korea
| | - Young Hyun Hwang
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seoul, 02841, Republic of Korea
| | - Kwang Wook Choi
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seoul, 02841, Republic of Korea
| | - Seungwon Lee
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seoul, 02841, Republic of Korea
| | - Soojin Kim
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seoul, 02841, Republic of Korea
| | - Soo Jong Park
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seoul, 02841, Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seoul, 02841, Republic of Korea.
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Mazaheri A, Lee M, van der Zant HSJ, Frisenda R, Castellanos-Gomez A. MoS 2-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite. NANOSCALE 2020; 12:19068-19074. [PMID: 32568333 DOI: 10.1039/d0nr02268c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similar to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS2 platelets. Employing this simple method, which can be easily extended to other 2D materials, we fabricate MoS2-on-paper broadband photodetectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR) range. We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.
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Affiliation(s)
- Ali Mazaheri
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
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