Strain-induced phase transition and giant piezoelectricity in monolayer tellurene

Direct Observations of Spontaneous In-Plane Electronic Polarization in 2D Te Films

Single-element polarization in low dimensions is fascinating for constructing next-generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low-temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry-breaking character in 2D Te gives rise to sizable in-plane polarization with accumulated charges, which is demonstrated by the reversed band-bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te-graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices.

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

Equibiaxial strain regulates the electronic structure and mechanical, piezoelectric, and thermal transport properties of the 2H-phase monolayers CrX2 (X = S, Se, Te)

A superior piezoelectric coefficient and diminutive lattice thermal conductivity are advantageous for the application of a two-dimensional semiconductor in piezoelectric and thermoelectric devices, whereas an imperfect piezoelectric coefficient and large lattice thermal conductivity limit the practical application of the material. In this study, we investigate how the equibiaxial strain regulates the electronic structure, and mechanical, piezoelectric, and thermal transport properties. Tensile strain can deduce the bandgap of the monolayer CrX2 (X = S, Se, Te), whereas compressive strain has an opposite effect. Additionally, the transition from a semiconductor to a metal state and the transition between direct and indirect band gaps will occur at appropriate strain values, so the electronic structure can be effectively regulated. The reason is the different sensitivities of the energy corresponding to K and Γ on the valence band to the strain due to the changes in different orbital overlaps. The tensile strain can effectively improve the flexibility of monolayers CrX2, which provides a possibility for the application of flexible electronic devices. Furthermore, the tensile strain can improve the piezoelectric strain coefficient of monolayers CrX2. Using Slacks formulation, we calculate the lattice thermal conductivity, and the tensile biaxial strain can reduce the lattice thermal conductivity. Our research provides a strategy to enhance the piezoelectric and flexible electronic applications and decrease the lattice thermal conductivity, which can benefit the thermoelectric applications.

Funnel Devices Based on Asymmetrically Strained Transition Metal Dichalcogenides

The strain applied to transition metal dichalcogenides (TMDs) reduces their energy bandgap, and local strains result in a funnel-like band structure in which funneled excitons move toward the most strained region. Herein, a funnel device based on asymmetrically strained WS₂ and MoS₂ is reported. Asymmetric strains are induced by transferring the TMD flakes onto a fork-shaped SU-8 microstructure. Raman and photoluminescence spectra peaks are shifted according to the morphology of the SU-8 microstructure, indicating the application of asymmetric strains to the TMDs. To investigate whether funneled excitons can be converted to electrical currents, various devices are constructed by depositing symmetric and asymmetric electrodes onto the strained TMDs. The scanning photocurrent mapping images follow a fork-shaped pattern, indicating probable conversion of the funneled excitons into electrical currents. In the case of the funnel devices with asymmetric Au and Al electrodes, short-circuit current (I_SC ) of WS₂ is enhanced by the strains, whereas I_SC of MoS₂ is suppressed because the Schottky barrier lowers with increasing strain for the MoS₂ . These results demonstrate that the funnel devices can be implemented using asymmetrically strained TMDs and the effect of strains on the Schottky barrier is dependent on the TMD used.

Robust Piezoelectricity with Spontaneous Polarization in Monolayer Tellurene and Multilayer Tellurium Film at Room Temperature for Reliable Memory

Robust neuromorphic computing in the Big Data era calls for long-term stable crossbar-array memory cells; however, the elemental segregation in the switch unit and memory unit that inevitably occurs upon cycling breaks the compositional and structural stability, making the whole memory cell a failure. Searching for a novel material without segregation that can be used for both switch and memory units is the major concern to fabricate robust and reliable nonvolatile cross-array memory cells. Tellurium (Te) is found recently to be the only peculiar material without segregation for switching, but the memory function has not been demonstrated yet. Herein, apparent piezoelectricity is experimentally confirmed with spontaneous polarization behaviors in elementary 2D Te, even in monolayer tellurene (0.4 nm), due to the highly oriented polarization of the molecular structure and the non-centrosymmetric lattice structure. A large memory window of 7000, a low working voltage of 2 V, and high on switching current up to 36.6 µA µm^-1 are achieved in the as-fabricated Te-based memory device, revealing the great promise of Te for both switching and memory units in one cell without segregation. The piezoelectric Te with spontaneous polarization provides a platform to build robust, reliable, and high-density logic-in-memory chips in neuromorphic computing.

Tunable Electronic Properties of Few-Layer Tellurene under In-Plane and Out-of-Plane Uniaxial Strain

Strain engineering is a promising and fascinating approach to tailoring the electrical and optical properties of 2D materials, which is of great importance for fabricating excellent nano-devices. Although previous theoretical works have proved that the monolayer tellurene has desirable mechanical properties with the capability of withstanding large deformation and the tunable band gap and mobility conductance induced by in-plane strain, the effects of in-plane and out-of-plane strains on the properties of few-layer tellurene in different phases should be explored deeply. In this paper, calculations based on first-principles density functional theory were performed to predict the variation in crystal structures and electronic properties of few-layer tellurene, including the α and β phases. The analyses of mechanical properties show that few-layer α-Te can be more easily deformed in the armchair direction than β-Te owing to its lower Young's modulus and Poisson's ratio. The α-Te can be converted to β-Te by in-plane compressive strain. The variations in band structures indicate that the uniaxial strain can tune the band structures and even induce the semiconductor-to-metal transition in both few-layer α-Te and β-Te. Moreover, the compressive strain in the zigzag direction is the most feasible scheme due to the lower transition strain. In addition, few-layer β-Te is more easily converted to metal especially for the thicker flakes considering its smaller band gap. Hence, the strain-induced tunable electronic properties and semiconductor-to-metal transition of tellurene provide a theoretical foundation for fabricating metal-semiconductor junctions and corresponding nano-devices.

Emerging beyond-graphene elemental 2D materials for energy and catalysis applications

Elemental two-dimensional (2D) materials have emerged as promising candidates for energy and catalysis applications due to their unique physical, chemical, and electronic properties. These materials are advantageous in offering massive surface-to-volume ratios, favorable transport properties, intriguing physicochemical properties, and confinement effects resulting from the 2D ultrathin structure. In this review, we focus on the recent advances in emerging energy and catalysis applications based on beyond-graphene elemental 2D materials. First, we briefly introduce the general classification, structure, and properties of elemental 2D materials and the new advances in material preparation. We then discuss various applications in energy harvesting and storage, including solar cells, piezoelectric and triboelectric nanogenerators, thermoelectric devices, batteries, and supercapacitors. We further discuss the explorations of beyond-graphene elemental 2D materials for electrocatalysis, photocatalysis, and heterogeneous catalysis. Finally, the challenges and perspectives for the future development of elemental 2D materials in energy and catalysis are discussed.

Intercorrelated ferroelectrics in 2D van der Waals materials

2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional inversion asymmetry in single-layers, which restricts 2D intercorrelated ferroelectrics to extremely few systems. Herein, we propose a new scheme for achieving 2D intercorrelated ferroelectrics using van der Waals (vdW) interaction, and apply this scheme to a vast family of 2D vdW materials. Using first-principles, we demonstrate that 2D vdW multilayers, for example, BN, MoS₂, InSe, CdS, PtSe₂, TI₂O, SnS₂, Ti₂CO₂etc., can exhibit coupled in-plane and out-of-plane ferroelectricity, thus yielding 2D intercorrelated ferroelectric physics. We further predict that such intercorrelated ferroelectrics could demonstrate many distinct properties, for example, electrical full control of spin textures in trilayer PtSe₂ and electrical permanent control of valley-contrasting physics in four-layer VS₂. Our finding opens a new direction for 2D intercorrelated ferroelectric research.

Large piezoelectric and thermal expansion coefficients with negative Poisson's ratio in strain-modulated tellurene

Two dimensional (2D) chalcogenide monolayers have diversified applications in optoelectronics, piezotronics, sensors and energy harvesting. The group-IV tellurene monolayer is one such emerging material in the 2D family owing to its piezoelectric, thermoelectric and optoelectronic properties. In this paper, the mechanical and piezoelectric properties of 2D tellurene in centrosymmetric β and non-centrosymmetric β' phases are investigated using density functional theory. β'-Te has shown a negative Poisson's ratio of -0.024 along the zigzag direction. Giant in-plane piezoelectric coefficients of -83.89 × 10-10 C m-1 and -42.58 × 10-10 C m-1 are observed for β'-Te under biaxial and uniaxial strains, respectively. The predicted values are remarkably higher, that is 23 and 12 times the piezoelectric coefficient of a MoS2 monolayer with biaxial and uniaxial strain in the zigzag direction, respectively. A large thermal expansion coefficient of tellurene is also estimated using quasi harmonic approximation. High piezoelectricity combined with exotic mechanical and thermal properties makes tellurene a very promising candidate in nanoelectronics.

Structure and electronic bandgap tunability of m-plane GaN multilayers

Two-dimensional (2D) gallium nitride (GaN) has attracted a lot of attention due to its promising applications in photoelectric nano-devices. Most previous research studies have focused on polar c-plane 2D structures. Here, by employing first principles calculations, we systematically investigate the structural and electronic properties of non-polar m-plane GaN with different numbers of atomic layers. The results show a layer-dependent structure transition and electronic band variation for m-plane GaN. It is found that the monolayer keeps a planar hexagonal structure due to sp2 hybridization, whereas the multilayers are formed by stacking of buckled hexagonal monolayers with unsaturated coordination number at the surface sublayer and bulk-like inner layers. These discrepancies in the structure further induce an indirect to direct transition of the band gap type when the layer number reaches twelve. By carefully examining the relationship between the structure and electronic bandgap, we find that the indirect bandgap comes from the unsaturated surface with a planar like structure. On surface modification, saturation of the surface dangling bonds results in an indirect to direct band gap transition.