Recent progress of TMD nanomaterials: phase transitions and applications

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications

Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility µp ≈  1.4 cm2V-1s-1 and a subthreshold swing SS ≈ 10 V dec-1. Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R ≈ 10 mAW-1 at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.

Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.

Wet-Chemical Synthesis of Elemental 2D Materials

Wet-chemical synthesis refers to the bottom-up chemical synthesis in solution, which is among the most popular synthetic approaches towards functional two-dimensional (2D) materials. It offers several advantages, including cost-effectiveness, high yields,, precious control over the production process. As an emerging family of 2D materials, elemental 2D materials (Xenes) have shown great potential in various applications such as electronics, catalysts, biochemistry,, sensing technologies due to their exceptional/exotic properties such as large surface area, tunable band gap,, high carrier mobility. In this review, we provide a comprehensive overview of the current state-of-the-art in wet-chemical synthesis of Xenes including tellurene, bismuthene, antimonene, phosphorene,, arsenene. The current solvent compositions, process parameters utilized in wet-chemical synthesis, their effects on the thickness, stability of the resulting Xenes are also presented. Key factors considered involves ligands, precursors, surfactants, reaction time, temperature. Finally, we highlight recent advances, existing challenges in the current application of wet-chemical synthesis for Xenes production, provide perspectives on future improvement.

Transforming friction: unveiling sliding-induced phase transitions in CVD-grown WS2 monolayers under single-asperity sliding nanocontacts

Transition metal dichalcogenides (TMDs) exhibit diverse properties across different phases, making them promising materials for various engineering applications. In the present work, we employed a comprehensive approach, combining experimental investigations and computational simulations to elucidate the remarkable tunable frictional characteristics of chemical vapor deposition (CVD) grown WS2 monolayers through the sliding-induced transitions between the 1H and 1T' phases. Our atomic force microscopy (AFM) measurements reveal a significant contrast in friction between the two phases, with the 1H phase displaying higher friction (∼52%) than the 1T' phase. Surprisingly, under repeated scanning at constant stress, the friction of the 1H phase decreases, eventually matching the lower friction values of the 1T' phase. It was observed that the phase transformation is irreversible and is strongly dependent on contact stresses and is accelerated as the contact stress is increased by increasing the applied normal load. Molecular dynamics (MD) simulations provide further insights into the phase transition mechanism, highlighting the role of localized lateral stress and strain induced by sliding an AFM tip on the 1H phase. The simulations confirm that sliding induced localized lateral strain plays a crucial role in the phase transition, ultimately resulting in a decrease in friction. Moreover, our simulations unveil an intriguing connection between friction, potential energy surfaces, and the localized lateral strain during the phase transformation process. Our findings not only offer insights into the tribological properties of TMD materials but also open new possibilities for tailoring their performance in various applications where reducing friction and wear is crucial.

Phase transition in WSe2-xTex monolayers driven by charge injection and pressure: a first-principles study

Alloying strategies permit new probes for governing structural stability and semiconductor-semimetal phase transition of transition metal dichalcogenides (TMDs). However, the possible structure and phase transition mechanism of the alloy TMDs, and the effect of an external field, have been still unclear. Here, the enrichment of the Te content in WSe2-xTex monolayers allows for coherent structural transition from the H phase to the T' phase. The crystal orbital Hamiltonian population (COHP) uncovers that the bonding state of the H phase approaches the high-energy domain near the Fermi level as the Te concentration increases, posing a source of structural instability followed by a weakened energy barrier for the phase transition. In addition, the structural phase transition driven by charge injection opens up new possibilities for the development of phase-change devices based on atomic thin films. For WSe2-xTex monolayers with the H phase as the stable phase, the critical value of electron concentration triggering the phase transition decreases with an increase in the x value. Furthermore, the energy barrier from the H phase to the T' phase can be effectively reduced by applying tensile strain, which could favor the phase switching in electronic devices. This work provides a critical reference for controllable modulation of phase-sensitive devices from alloy materials with rich phase characteristics.

Structural approach to charge density waves in low-dimensional systems: electronic instability and chemical bonding

The charge density wave (CDW) instability, usually occurring in low-dimensional metals, has been a topic of interest for longtime. However, some very fundamental aspects of the mechanism remain unclear. Recently, a plethora of new CDW materials, a substantial fraction of which is two-dimensional or even three-dimensional, has been prepared and characterised as bulk and/or single-layers. As a result, the need for revisiting the primary mechanism of the instability, based on the electron-hole instability established more than 50 years ago for quasi-one-dimensional (quasi-1D) conductors, has clearly emerged. In this work, we consider a large number of CDW materials to revisit the main concepts used in understanding the CDW instability, and emphasise the key role of the momentum dependent electron-phonon coupling in linking electronic and structural degrees of freedom. We argue that for quasi-1D systems, earlier weak coupling theories work appropriately and the energy gain due to the CDW and the concomitant periodic lattice distortion (PLD) remains primarily due to a Fermi surface nesting mechanism. However, for materials with higher dimensionality, intermediate and strong coupling regimes are generally at work and the modification of the chemical bonding network by the PLD is at the heart of the instability. We emphasise the need for a microscopic approach blending condensed matter physics concepts and state-of-the-art first-principles calculations with quite fundamental chemical bonding ideas in understanding the CDW phenomenon in these materials.

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.

Defect engineered magnetism induction and electronic structure modulation in monolayer MoS2

The electronic, magnetic, and optical characteristics of a defective monolayer MoS2 were examined by employing density functional theory (DFT)-based first-principles calculations. The effects of several defects on the electrical, magnetic, and optical properties, including Mo vacancies, MoS3 vacancies, and the substitution of a single Mo atom by two S atoms were studied in this work. Our first-principles calculations revealed that different types of defects produced distinct energy states within the band gap, leading to a band gap reduction after the introduction of various types of defects, which caused a change from semiconducting to metallic behavior. The spin-up and spin-down states were separated in the case of MoS3 vacancy. The total magnetization was ∼ -0.83 μ B /cell, and the absolute magnetization was ∼ 1.23 μ B /cell. Moreover, spin-up states had a 0.45 eV band gap, whereas spin-down states were metallic. Consequently, it can be promising for spin filter applications. It was disclosed that the broadband part of the electromagnetic spectrum has a high absorption coefficient, which is necessary for applications including impurity detection, photodiodes, and solar cells. Designing spintronic and optoelectronic devices will benefit from the modification of the electrical, optical, and magnetic properties by defect engineering of MoS2 monolayers presented here.

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

In Situ TEM Characterization and Modulation for Phase Engineering of Nanomaterials

Solid-state phase transformation is an intriguing phenomenon in crystalline or noncrystalline solids due to the distinct physical and chemical properties that can be obtained and modified by phase engineering. Compared to bulk solids, nanomaterials exhibit enhanced capability for phase engineering due to their small sizes and high surface-to-volume ratios, facilitating various emerging applications. To establish a comprehensive atomistic understanding of phase engineering, in situ transmission electron microscopy (TEM) techniques have emerged as powerful tools, providing unprecedented atomic-resolution imaging, multiple characterization and stimulation mechanisms, and real-time integrations with various external fields. In this Review, we present a comprehensive overview of recent advances in in situ TEM studies to characterize and modulate nanomaterials for phase transformations under different stimuli, including mechanical, thermal, electrical, environmental, optical, and magnetic factors. We briefly introduce crystalline structures and polymorphism and then summarize phase stability and phase transformation models. The advanced experimental setups of in situ techniques are outlined and the advantages of in situ TEM phase engineering are highlighted, as demonstrated via several representative examples. Besides, the distinctive properties that can be obtained from in situ phase engineering are presented. Finally, current challenges and future research opportunities, along with their potential applications, are suggested.

Phase-Engineered WS2 Monolayer Quantum Dots by Rhenium Doping

Transition metal dichalcogenides (TMDs) occur in the thermodynamically stable trigonal prismatic (2H) phase or the metastable octahedral (1T) phase. Phase engineering of TMDs has proven to be a powerful tool for applications in energy storage devices as well as in electrocatalysis. However, the mechanism of the phase transition in TMDs and the synthesis of phase-controlled TMDs remain challenging. Here we report the synthesis of Re-doped WS2 monolayer quantum dots (MQDs) using a simple colloidal chemical process. We find that the incorporation of a small amount of electron-rich Re atoms in WS2 changes the metal-metal distance in the 2H phase initially, which introduces strain in the structure (strained 2H (S2H) phase). Increasing the concentration of Re atoms sequentially transforms the S2H phase into the 1T and 1T' phases to release the strain. In addition, we performed controlled experiments by doping MoS2 with Re to distinguish between Re and Mo atoms in scanning transmission electron microscopy images and quantified the concentration range of Re atoms in each phase of MoS2, indicating that phase engineering of WS2 or MoS2 is possible by doping with different amounts of Re atoms. We demonstrate that the 1T' WS2 MQDs with 49 at. % Re show superior catalytic performance (a low Tafel slope of 44 mV/dec, a low overpotential of 158 mV at a current density of 10 mA/cm2, and long-term durability up to 5000 cycles) for the hydrogen evolution reaction. Our findings provide understanding and control of the phase transitions in TMDs, which will allow for the efficient manufacturing and translation of phase-engineered TMDs.

Two-dimensional β-noble-transition-metal chalcogenide: novel highly stable semiconductors with manifold outstanding optoelectronic properties and strong in-plane anisotropy

In this work, five two-dimensional (2D) noble-transition-metal chalcogenide (NTMC) semiconductors, namely β-NX (N = Au, Ag; X = S, Se, Te), were designed and predicted by first-principles simulations. Structurally, the monolayer β-NX materials have good energetic, mechanical, dynamical, and thermal stability. They contain two inequivalent noble-transition-metal atoms in the unit cell, and the N-X bond comprises a partial ionic bond and a partial covalent bond. Regarding the electronic properties, the β-NX materials are indirect-band-gap semiconductors with appropriate band-gap values. They have tiny electron effective masses. The hole effective masses exhibit significant differences in different directions, indicating strongly anisotropic hole mobility. In addition, the coexistence of linear and square-planar channels means that the diffusion and transport of carriers should be anisotropic. In terms of optical properties, the β-NX materials show high absorption coefficients. The absorption and reflection characteristics reveal strong anisotropy in different directions. Therefore, the β-NX materials are indirect-band-gap semiconductors with good stability, high absorption coefficients, and strong mechanical, electronic, transport, and optical anisotropy. In the future, they could have great potential as 2D semiconductors in nano-electronics and nano-optoelectronics.

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System

Controlling resistance by external fields provides fascinating opportunities for the development of novel devices and circuits, such as temperature-field-induced superconductors, magnetic-field-triggered giant magnetoresistance devices, and electric-field-operated flash memories. In this work, we demonstrate a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage in a single device, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.

Flexible use of commercial rhenium disulfide for various theranostic applications

Rhenium disulfide (ReS2) with distinct physicochemical properties has shown promising potential in disease theranostics, such as drug delivery, computed tomography (CT), radiotherapy, and photothermal therapy (PTT). However, the synthesis and post-modification of ReS2 agents for different application scenarios are time- and energy-consuming, which seriously hinders the clinical translation of ReS2. Herein, we proposed three facile excipient strategies for different theranostic applications of ReS2 just through the flexible use of commercial ReS2 powder. Three excipients, including sodium alginate (ALG), xanthan gum (XG), and ultraviolet-cured resin (UCR), were used to prepare different dosage forms of commercial ReS2 powder, like hydrogel, suspension, and capsule, respectively. These dosage forms of ReS2 with distinct characteristics showed great potential for second near-infrared window PTT against tumours, gastric spectral CT imaging, and functional evaluation of the digestive tract in vivo. In addition, these ReS2 formulations exhibited good biocompatibility both in vitro and in vivo, showing a promising prospect for clinical transformation. More importantly, the facile excipient strategies for commercial agents pave a bridge to the development and wide bioapplication of many other theranostic biomaterials.

Recent Advances in Phase-Engineered Photocatalysts: Classification and Diversified Applications

Phase engineering is an emerging strategy for tuning the electronic states and catalytic functions of nanomaterials. Great interest has recently been captured by phase-engineered photocatalysts, including the unconventional phase, amorphous phase, and heterophase. Phase engineering of photocatalytic materials (including semiconductors and cocatalysts) can effectively affect the light absorption range, charge separation efficiency, or surface redox reactivity, resulting in different catalytic behavior. The applications for phase-engineered photocatalysts are widely reported, for example, hydrogen evolution, oxygen evolution, CO₂ reduction, and organic pollutant removal. This review will firstly provide a critical insight into the classification of phase engineering for photocatalysis. Then, the state-of-the-art development of phase engineering toward photocatalytic reactions will be presented, focusing on the synthesis and characterization methodologies for unique phase structure and the correlation between phase structure and photocatalytic performance. Finally, personal understanding of the current opportunities and challenges of phase engineering for photocatalysis will also be provided.

InN/XS2 (X = Zr, Hf) vdW heterojunctions: promising Z-scheme systems with high hydrogen evolution activity for photocatalytic water splitting

Z-scheme van der Waals heterojunctions are very attractive photocatalysts attributed to their excellent reduction and oxidation abilities. In this paper, we designed InN/XS₂ (X = Zr, Hf) heterojunctions and explored their electronic structure properties, photocatalytic performance, and light absorption systematically using first-principles calculations. We found that the valence-band maximum (VBM) and conduction-band minimum (CBM) of the InN/XS₂ (X = Zr, Hf) heterojunctions are contributed by InN and XS₂, respectively. Photo-generated carriers transferring along the Z-path can accelerate the recombination of interlayer electron-hole pairs. Therefore, the photogenerated electrons in the CBM of the InN layer can be maintained making the hydrogen evolution reaction occur continuously, while photogenerated holes in the VBM of the Ti₂CO₂ layer make the oxygen evolution reaction occur continuously. The band edge positions of heterojunctions can straddle the required water redox potentials, while pristine InN and XS₂ (X = Zr, Hf) can only be used for photocatalytic hydrogen evolution or oxygen evolution, respectively. Furthermore, the HER barriers can be tuned by transition metal doping. With Cr doping, the hydrogen evolution reaction (HER) barriers decrease to -0.12 for InN/ZrS₂ and -0.05 eV for InN/HfS₂, very close to the optimal value (0 eV). In addition, the optical absorption coefficient is as high as 10⁵ cm^-1 in the visible and ultraviolet regions. Therefore, the InN/XS₂ (X = Zr, Hf) heterojunctions are expected to be excellent photocatalysts for water splitting.

Ultralow diffusion barrier induced by intercalation in layered N-based cathode materials for sodium-ion batteries

Sodium-ion batteries (SIBs) have attracted huge attention due to not only the similar electrochemical properties to Lithium-ion batteries (LIBs) but also the abundant natural reserves of sodium. However, the high diffusion barrier has hindered its application. In this work, we have theoretically studied the relationship between the strain and the diffusion barrier/path of sodium ions in layered CrN₂ by first-principles calculation. Our results show that the strain can not only effectively decrease the diffusion barrier but also change the sodium diffusion path, which can be realized by alkali metal intercalation. Moreover, the diffusion barrier is as low as 0.04 eV with the Cs atoms embedding in layered CrN₂ (Cs_1/16CrN₂), suggesting an excellent candidate cathode for SIBs. In addition, the decrease of the barrier mainly originated from the fact that interlayer electronic coupling weakened with the increase of interlayer spacing. Our findings provide an effective way to enhance sodium diffusion performance, which is beneficial for the design of SIB electrode materials.

Effect of MoSe2 nanoribbons with NW30 edge reconstructions on the electronic and catalytic properties by strain engineering

Monolayer transition metal dichalcogenides (TMDs), typical two-dimensional semiconductors, have been extensively studied for their extraordinary physical properties and utilized for nanoelectronics and optoelectronics. However, the finite samples and discontinuity in the synthesis process of TMD materials definitely induce defect edges in nanoribbons and greatly influence the device performance. Here, we systematically studied the atomic structures, energetic and mechanical stability, and electronic and catalytic properties of MoSe₂ nanoribbons on the basis of experiments. Clear benefits of ZZSe-Mo-NW30 edged nanoribbons were found to evidently increase the dynamic stability according to our first-principles calculations. Meanwhile, unsaturated Mo atoms at the edge sites induced local magnetic moments up to 0.54 μ_B and changed the chemical environments of adjacent Se atoms, which acted as active sites for the hydrogen evolution reaction (HER) with a lower onset potential of -0.04 eV. The external tensile strain on these nanoribbons can have negligible effects on the electronic and catalytic properties. The onset potential of the ZZSe-Mo-NW30 edged nanoribbons only changed 0.03 eV under critical tensile strain. The atomic-scale research of edge reconstructions in TMD materials provides new opportunities to modulate the synthesis mechanism for experiments and defect-engineering applications in electrochemical catalysts.

Flat-optics hybrid MoS2/polymer films for photochemical conversion

Novel light harvesting platforms and strategies are crucial to develop renewable photon to energy conversion technologies that overcome the current global energy and environmental challenges. Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor layers are particularly attractive for photoconversion applications but new ultra-compact photon harvesting schemes are urgently required to mitigate their poor photon absorption properties. Here, we propose a flat-optics scheme based on nanogrooved ultra-thin MoS₂ layers conformally grown onto large area (cm² scale) nanopatterned templates. The subwavelength re-shaping of the 2D-TMD layers promotes the excitation of photonic Rayleigh anomaly (RA) modes, uniquely boosting a strong in-plane electromagnetic confinement. By tailoring the illumination conditions, we demonstrate effective tuning of the photonic anomalies over a broadband visible spectrum across the absorption band of relevant polluting dye molecules. Thanks to the strong photonic in-plane confinement, we achieve a resonant enhancement of the photodissociation rate of methylene blue (MB) molecules, well above a factor of 2. These results highlight the potential of flat-optics photon harvesting schemes for boosting photoconversion efficiency in large-scale hybrid 2D-TMD/polymer layers, with a strong impact in various applications ranging from new-generation photonics to waste water remediation and renewable energy storage.

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials

Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility. However, the performance of FETs based on 2D semiconductors has been limited by extrinsic factors, including high contact resistance, strong interfacial scattering, and unintentional doping. Among these challenges, contact resistance is a dominant issue, and important progress has been made in recent years. In this review, the Schottky-Mott model is introduced to show the ideal Schottky barrier, and we further discuss the contribution of the Fermi-level pinning effect to the high contact resistance in 2D semiconductor devices. In 2D FETs, Fermi-level pinning is attributed to the high-energy metal deposition process, which would damage the lattice of atomically thin 2D semiconductors and induce the pinning of the metal Fermi level. Then, two contact structures and the strategies to fabricate low-contact-resistance short-channel 2D FETs are introduced. Finally, our review provides practical guidelines for the realization of high-performance 2D-semiconductors-based FETs with low contact resistance and discusses the outlook of this field.

Janus structures of SMoSe and SVSe compositions with low enthalpy and unusual crystal chemistry

The recent synthesis of single-layer Janus-type transition metal dichalcogenides (TMDs) raises the question of the existence of other possible 2D structures with an asymmetric out-of-plane structural configuration. In the present work, a theoretical search for new Janus structures having SMoSe and SVSe compositions is performed. A detailed crystal-chemical analysis of the predicted structures is carried out, and it is shown that some of the dynamically stable structures are characterized by crystal-chemical features that are unique among TMDs, including quadruple Mo—Mo bonds and covalent S—S and Se—Se bonds. It is also shown that Mo-bearing TMDs have a tendency to form strong Mo—Mo bonds with chains or isolated dimers of molybdenum atoms, while in the case of vanadium-containing TMDs this feature is not characteristic. Two predicted crystal structures, called 1M-SVSe and 1A′-SMoSe, are especially promising for experimental synthesis and practical applications owing to their dynamical stability and rather low value of enthalpy compared with known structures. The enthalpy of 1M-SVSe is 0.22 eV per formula unit lower than that of 1T-SVSe, while the enthalpy of 1A′-SMoSe is 0.12 eV per formula unit lower than the enthalpy of 1T-SMoSe. The performed topological analysis showed that the predicted structures are unique and do not have analogues in the Inorganic Crystal Structure Database.

Two dimensional semiconducting materials for ultimately scaled transistors

Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.

Phase Engineering of Metastable Transition Metal Dichalcogenides via Ionic Liquid Assisted Synthesis

Metallic group VIB transition metal dichalcogenides (1T-TMDs) have attracted great interest because of their outstanding performance in electrocatalysis, supercapacitors, batteries, and so on, whereas the strict fabrication conditions and thermodynamical metastability of 1T-TMDs greatly restrict their extensive applications. Therefore, it is significant to obtain stable and high-concentration 1T-TMDs in a simple and large-scale strategy. Herein, we report a facile and large-scale synthesis of high-concentration 1T-TMDs via an ionic liquid (IL) assisted hydrothermal strategy, including 1T-MoS₂ (the obtained MoS₂ sample was denoted as MoS₂-IL), 1T-WS₂, 1T-MoSe₂, and 1T-WSe₂. More importantly, we found that IL can adsorb on the surface of 1T-MoS₂, where the steric hindrance, π-π stacking, and hydrogen bonds of ionic liquid collectively induce the formation of the 1T-MoS₂. In addition, DFT calculation reveals that electrons are transferred from [BMIM]SCN (1-butyl-3-methylimidazolium thiocyanate) to 1T-MoS₂ layers by hydrogen bonds, which enhances the stability of 1T-MoS₂, so the MoS₂-IL performs with high stability for 180 days at room temperature without obvious change. Furthermore, the MoS₂-IL exhibits excellent HER performance with an overpotential of 196 mV at 10 mA cm^-2 in acid conditions.

Recent Progress in 1D Contacts for 2D-Material-Based Devices

Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R_C ), thereby substantially lowering the electronic mobility of 2DM-based devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high-density transistor integration independent of scaling, and the fabrication of double-gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large-scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.

Large-Scale 1T'-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

The control of crystal polymorphism and exploration of metastable, two-dimensional, 1T'-phase, transition-metal dichalcogenides (TMDs) have received considerable research attention. 1T'-phase TMDs are expected to offer various opportunities for the study of basic condensed matter physics and for its use in important applications, such as devices with topological states for quantum computing, low-resistance contact for semiconducting TMDs, energy storage devices, and as hydrogen evolution catalysts. However, due to the high energy difference and phase change barrier between 1T' and the more stable 2H-phase, there are few methods that can be used to obtain monolayer 1T'-phase TMDs. Here, we report on the chemical vapor deposition (CVD) growth of 1T'-phase WS₂ atomic layers from gaseous precursors, i.e., H₂S and WF₆, with alkali metal assistance. The gaseous nature of the precursors, reducing properties of H₂S, and presence of Na⁺, which acts as a countercation, provided an optimal environment for the growth of 1T'-phase WS₂, resulting in the formation of high-quality submillimeter-sized crystals. The crystal structure was characterized by atomic-resolution scanning transmission electron microscopy, and the zigzag chain structure of W atoms, which is characteristic of the 1T' structure, was clearly observed. Furthermore, the grown 1T'-phase WS₂ showed superconductivity with the transition temperature in the 2.8-3.4 K range and large upper critical field anisotropy. Thus, alkali metal assisted gas-source CVD growth is useful for realizing large-scale, high-quality, phase-engineered TMD atomic layers via a bottom-up synthesis.

Phase control and lateral heterostructures of MoTe2 epitaxially grown on graphene/Ir(111)

Engineering the growth of the different phases of two-dimensional transition metal dichalcogenides (2D-TMDs) is a promising way to exploit their potential since the phase determines their physical and chemical properties. Here, we report on the epitaxial growth of monolayer MoTe₂ on graphene on an Ir(111) substrate. Scanning tunneling microscopy and spectroscopy provide insights into the structural and electronic properties of the different polymorphic phases, which remain decoupled from the substrate due to the weak interaction with graphene. In addition, we demonstrate a great control of the relative coverage of the relevant 1T' and 1H MoTe₂ phases by varying the substrate temperature during the growth. In particular, we obtain large areas of the 1T' phase exclusively or the coexistence of both phases with different ratios.

pH-Dependent Photophysical Properties of Metallic Phase MoSe2 Quantum Dots

Fluorescence properties of quantum dots (QDs) are critically affected by their redox states, which is important for practical applications. In this study, we investigated the optical properties of MoSe₂-metallic phase quantum-dots (MoSe₂-mQDs) depending on the pH variation, in which the MoSe₂-mQDs were dispersed in water with two sizes (Φ~3 nm and 12 nm). The larger MoSe₂-mQDs exhibited a large red-shift and broadening of photoluminescence (PL) peak with a constant UV absorption spectra as varying the pH, while the smaller ones showed a small red-shift and peak broadening, but discrete absorption bands in the acidic solution. The excitation wavelength-dependent photoluminescence shows that the PL properties of smaller MoSe₂-mQDs are more sensitive to the pH change compared to those of larger ones. From the time-resolved PL spectroscopy, the excitons dominantly decaying with an energy of ~3 eV in pH 2 clearly show the shift of PL peak to the lower energy (~2.6 eV) as the pH increases to 7 and 11 in the smaller MoSe₂-mQDs. On the other hand, in the larger MoSe₂-mQDs, the exciton decay is less sensitive to the redox states compared to those of the smaller ones. This result shows that the pH variation is more critical to the change of photophysical properties than the size effect in MoSe₂-mQDs.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Recent progress in nanomaterial-based bioelectronic devices for biocomputing system

Bioelectronic devices have received the massive attention because of their huge potential to develop the core electronic components for biocomputing system. Up to now, numerous bioelectronic devices have been reported such as biomemory and biologic gate by employment of biomolecules including metalloproteins and nucleic acids. However, the intrinsic limitations of biomolecules such as instability and low signal production hinder the development of novel bioelectronic devices capable of performing various novel computing functions. As a way to overcome these limitations, nanomaterials have the great potential and wide applicability to grant and extend the electronic functions, and improve the inherent properties from biomolecules. Accordingly, lots of nanomaterials including the conductive metal, graphene, and transition metal dichalcogenide nanomaterials are being used to develop the remarkable functional bioelectronic devices like the multi-bit biomemory and resistive random-access biomemory. This review discusses the nanomaterial-based superb bioelectronic devices including the biomemory, biologic gates, and bioprocessors. In conclusion, this review will provide the interdisciplinary information about utilization of various novel nanomaterials applicable for biocomputing system.

Effect of chemical substitution and external strain on phase stability and ferroelectricity in two dimensional M2CT2 MXenes

Two dimensional ferroelectric materials are gaining increasing attention for use in ultrathin electronic devices owing to the presence of a spontaneous polarization down to one or two monolayers. However, such materials are difficult to identify, especially those with out-of-plane electric polarizations. Previous work predicted that a metastable ferroelectric phase exists in the 2D MXene Sc₂CO₂, while further studies have predicted that this phase exists in other MXene chemistries. However, questions remain about the origin of ferroelectricity, the stability of this phase relative to other competing phases, and the effect of external stimuli in these materials. In this work, we use density functional theory calculations to investigate 12 M₂CT₂ MXenes (M = transition metal, T = surface terminating group) and determine which have the ferroelectric phase as their ground state. We compute these materials' polarizations, densities of states, phonon band structures, Bader charges, and Born effective charges in the ferroelectric phase to elucidate the reasons for its stabilization. We demonstrate that this ferroelectric phase can be preferentially stabilized in non-ferroelectric MXenes through full chemical substitution of Sc or O, alloying of the Sc sites, or application of epitaxial strain. Finally, we show that these materials have excellent piezoelectric properties as well. This work provides a detailed understanding of ferroelectric MXenes and show how the number of 2D ferroelectric materials can be increased through chemical substitution or application of external stimuli.

Fast and efficient electrochemical thinning of ultra-large supported and free-standing MoS2 layers on gold surfaces

Molybdenum disulfide (MoS₂) is a very promising layered material for electrical, optical, and electrochemical applications because of its unique and outstanding properties. To unlock its full potential, among different preparation routes, electrochemistry has gain interest due to its simple, fast, scalable and simple instrumentation. However, obtaining large-area monolayer MoS₂ that will enable the fabrication of novel electronic and electrochemical devices is still challenging. In this work, we reported a simple and fast electrochemical thinning process that results in ultra-large MoS₂ down to monolayer on Au surfaces. The high affinity of MoS₂ by Au surfaces enables the removal of bulk layers while preserving the first layer attached to the electrode. With a proper choice of the applied potential, more than 90% of the bulk regions can be removed from large-area MoS₂ crystals, as confirmed by atomic force microscopy, photoluminescence, and Raman spectroscopy. We further address a set of contributions that are helpful to elucidate the features of MoS₂, namely, the hyphenation of electrochemistry and optical microscopy for real-time observation of the thinning process that was revealed to occur from the edges to the center of the flake, an image treatment to estimate the thinning area and thinning rate, and the preparation of free-standing MoS₂ layers by electrochemically thinning bulk flakes on microhole-structured Ni/Au meshes.

Tuning the Electronic and Optical Properties of the Novel Monolayer Noble-Transition-Metal Dichalcogenides Semiconductor β-AuSe via Strain: A Computational Investigation

The strain-controlled structural, electronic, and optical characteristics of monolayer β-AuSe are systematically studied using first-principles calculations in this paper. For the strain-free monolayer β-AuSe, the structure is dynamically stable and maintains good stability at room temperature. It belongs to the indirect band gap semiconductor, and its valence band maximum (VBM) and conduction band minimum (CBM) consist of hybrid Au-d and Se-p electrons. Au–Se is a partial ionic bond and a partial polarized covalent bond. Meanwhile, lone-pair electrons exist around Se and are located between different layers. Moreover, its optical properties are anisotropic. As for the strained monolayer β-AuSe, it is susceptible to deformation by uniaxial tensile strain. It remains the semiconductor when applying different strains within an extensive range; however, only the biaxial compressive strain is beyond −12%, leading to a semiconductor–semimetal transition. Furthermore, it can maintain relatively stable optical properties under a high strain rate, whereas the change in optical properties is unpredictable when applying different strains. Finally, we suggest that the excellent carrier transport properties of the strain-free monolayer β-AuSe and the stable electronic properties of the strained monolayer β-AuSe originate from the p–d hybridization effect. Therefore, we predict that monolayer β-AuSe is a promising flexible semiconductive photoelectric material in the high-efficiency nano-electronic and nano-optoelectronic fields.

Monolayer WS2 Lateral Homosuperlattices with Two-dimensional Periodic Localized Photoluminescence

Homojunctions and homosuperlattices are essential structures and have been widely explored for use in advanced electronic and optoelectronic devices. However, artificially manipulating crystalline phases in two-dimensional (2D) monolayers is still challenging, especially when attempting to engineer lateral homogeneous junctions in a single monolayer of transition metal dichalcogenides (TMDs). Herein, we demonstrate a lateral homosuperlattice (MLHS) with alternating 1T and 2H domains in a 2D WS₂ monolayer plane. In MLHSs, the 2H domains, which are laterally localized and isolated by potential wells, manifest junction interfaces and irradiated photoluminescence (PL) with a lateral periodic distribution in the two-dimensional plane. The studies on MLHSs here can provide further understanding of lateral homojunctions and homosuperlattices in a monolayer plane, providing an alternative route to modulate optical and electronic behaviors in TMD monolayers.

Ultrafast and stable ion/electron transport of MnNb2O6 in LIC/SC via interface protection and lattice defects

Interface protection and kinetics optimization could effectively relieve the shortcomings of bimetallic oxides, such as low conductivity, strong hydrophobicity, insufficient ion diffusion rate and metal interatomic instability. In this work, ultrathin amorphous carbon shells and lattice defects (heteroatoms and vacancies) are introduced into the MnNb₂O₆ nanofiber surface to improve the electron/ion kinetic stability, conductivity and electrochemical activity. The ultrathin carbon interface protects unstable lattice with defects, thus restraining the adverse reaction between bimetallic oxides and electrolyte. Especially, ultrathin amorphous carbon layer enhances the stability and uniformity of ion transport as the substitute of solid-liquid ion exchange membrane. Lattice defects (N doping and oxygen vacancy) also enhance the ionic kinetics of the material. MnNb₂O₆ nanofiber, being optimized by interface protection and lattice defects, shows excellent electrochemical performances in Lithium-ion battery and supercapacitor.

Optical Control of Multistage Phase Transition via Phonon Coupling in MoTe_{2}

The temporal characters of laser-driven phase transition from 2H to 1T^{'} has been investigated in the prototype MoTe_{2} monolayer. This process is found to be induced by fundamental electron-phonon interactions, with an unexpected phonon excitation and coupling pathway closely related to the nonequilibrium relaxation of photoexcited electrons. The order-to-order phase transformation is dissected into three substages, involving energy and momentum scattering processes from optical (A_{1}^{'} and E^{'}) to acoustic phonon modes [LA(M)] in subpicosecond timescale. An intermediate metallic state along the nonadiabatic transition pathway is also identified. These results have profound implications on nonequilibrium phase engineering strategies.

Metastable marcasite NiSe2 nanodendrites on carbon fiber clothes to suppress polysulfide shuttling for high-performance lithium-sulfur batteries

The incorporation of catalytic components is a promising strategy to promote redox reaction kinetics and suppress polysulfide shuttling for high-performance lithium-sulfur batteries (LSBs). In this work, metastable marcasite NiSe₂ nanodendrites grown on carbon fiber clothes (m-NiSe₂/CFC) were synthesized to improve chemical adsorption and electrocatalytic activity towards lithium polysulfides. The multifunctional m-NiSe₂/CFC film was utilized as both the interlayer and the three-dimensional (3D) current collector in LSBs. In comparison with the stable pyrite NiSe₂ nanodendrite-covered CFC (p-NiSe₂/CFC) counterpart, the m-NiSe₂/CFC film exhibits even stronger chemisorption, higher catalytic activity and faster reaction kinetics, thereby resulting in significantly improved lithium storage performance. The Al@S/rGO@m-NiSe₂/CFC cell has a high reversible capacity of 1646 mA h g^-1 at 0.2C, a high Q_L/Q_H ratio of 3.00 at 0.2C, a high rate capability of 900 mA h g^-1 at 4C, and an outstanding cyclic stability exhibiting a low capacity decay of 0.028% per cycle for 600 cycles at 4C. Moreover, a symmetrically sandwiched cathode of m-NiSe₂/CFC@S/rGO@m-NiSe₂/CFC was designed for high sulfur loading LSBs (4.5 mg cm^-2) with superior electrochemical performance of 3.73 mA h cm^-2 after 100 cycles at 1C rate. Our work opens up a new opportunity to enhance the electrochemical performance of LSBs by phase engineering of NiSe₂ catalysts in sandwiched structural cathodes.

Black Phosphorus Nanosheet Encapsulated by Zeolitic Imidazole Framework-8 for Tumor Multimodal Treatments

Black phosphorus (BP) nanosheet is easily oxidized by oxygen and water under ambient environment, thus, reliable BP passivation techniques for biomedical applications is urgently needed. A simple and applicable passivation strategy for biomedical applications was established by encapsulating BP nanosheet into zeolitic imidazole framework-8 (ZIF-8). The resulted BP nanosheet in ZIF-8 (BP@ZIF-8) shows not only satisfied chemical stability in both water and phosphate buffered saline (PBS), but also excellent biocompatibility. Notably, BP nanosheet endows the prepared BP@ZIF-8 with prominent photothermal conversion efficiency (31.90%). Besides passivation BP, ZIF-8 provides the BP@ZIF-8 with high drug loading amount (1353.3 mg g^-1). Moreover, the loaded drug can be controlled release by pH stimuli. Both in vitro and in vivo researches verified the resulted BP@ZIF-8 an ideal candidate for tumor multimodal treatments.

Boosted Solar Light Absorbance in PdS2/PtS2 Vertical Heterostructures for Ultrathin Photovoltaic Devices

Transition-metal dichalcogenides (TMDs) represent a class of materials whose archetypes, such as MoS2 and WS2, possess exceptional electronic and optical properties and have been massively exploited in optoelectronic applications. The layered structure allows for their exfoliation to two-dimensional samples with atomic thickness (≲ 1 nm), promising for ultrathin, ultralight devices. In this work, by means of state-of-the-art ab initio many-body perturbation theory techniques, we focus on single-layer PdS2 and PtS2 and propose a novel van der Waals heterostructure with outstanding light absorbance, reaching up to 50% in the visible spectrum and yielding a maximum short-circuit current of 7.2 mA/cm2 under solar irradiation. The computed excitonic landscape predicts a partial charge separation between the two layers and the momentum-forbidden lowest-energy state increases the carrier diffusion length. Our results show that the employment of vertical heterostructures with less conventional TMDs, such as PdS2/PtS2, can greatly boost light absorbance and favor the development of more efficient, atomic-thin photovoltaic devices.

Two-dimensional MoS2 2H, 1T, and 1T' crystalline phases with incorporated adatoms: theoretical investigation of electronic and optical properties

Although there has been progress in studying the electronic and optical properties of monolayer and near-monolayer (two-dimensional, 2D) MoS₂ upon adatom adsorption and intercalation, understanding the underlying atomic-level behavior is lacking, particularly as related to the optical response. Alkali atom intercalation in 2D transition metal dichalcogenides (TMDs) is relevant to chemical exfoliation methods that are expected to enable large scale production. In this work, focusing on prototypical 2D MoS₂, the adsorption and intercalation of Li, Na, K, and Ca adatoms were investigated for the 2H, 1T, and 1T^' phases of the TMD by the first principles density functional theory in comparison to experimental characterization of 2H and 1T 2D MoS₂ films. Our electronic structure calculations demonstrate significant charge transfer, influencing work function reductions of 1-1.5 eV. Furthermore, electrical conductivity calculations confirm the semiconducting versus metallic behavior. Calculations of the optical spectra, including excitonic effects using a many-body theoretical approach, indicate enhancement of the optical transmission upon phase change. Encouragingly, this is corroborated, in part, by the experimental measurements for the 2H and 1T phases having semiconducting and metallic behavior, respectively, thus motivating further experimental exploration. Overall, our calculations emphasize the potential impact of synthesis-relevant adatom incorporation in 2D MoS₂ on the electronic and optical responses that comprise important considerations toward the development of devices such as photodetectors or the miniaturization of electroabsorption modulator components.

Enhanced photocatalytic activity of the direct Z-scheme black phosphorus/BiOX (X = Cl, Br, I) heterostructures

Bismuth oxyhalides (BiOX), as a typical photocatalytic material, have attracted much attention due to their unique layered structure, non-toxicity and excellent stability. However, the photocatalytic performance of BiOX is limited by their weak light absorption ability and rapid recombination of photo-generated carriers. In the present work, first-principles calculations have been performed to comprehensively explore the structural, electronic and optical properties of black phosphorus (BP)/BiOX (X = Cl, Br, I) heterostructures, revealing the inherent reasons for their enhanced photocatalytic performance. By combining band structures and work function analysis, the migration paths of photo-generated electrons and holes are obtained, proving a direct Z-scheme photocatalytic mechanism in BP/BiOX heterostructures. Moreover, the BP/BiOX heterostructures have decent band edge positions, which are suitable for photocatalytic overall water splitting. Compared with single BiOX, the light absorption performance of BP/BiOX heterostructures is significantly improved, in which BP/BiOI exhibits the highest optical absorption coefficient among the BP/BiOX heterostructures. Meanwhile, the better carrier migration performance of the BP/BiOX heterostructures is attributed to the reduction in effective mass. The present work offers theoretical insight into the application of BP/BiOX heterostructures as prominent photocatalysts for water splitting.

Influence of the choice of precursors on the synthesis of two-dimensional transition metal dichalcogenides

The interest in transition metal dichalcogenides (TMDCs; MEy/2; M = transition metal; E = chalcogenide, y = valence of the metal) has grown exponentially across various science and engineering disciplines due to their unique structural chemistry manifested in a two-dimensional lattice that results in extraordinary electronic and transport properties desired for applications in sensors, energy storage and optoelectronic devices. Since the properties of TMDCs can be tailored by changing the stacking sequence of 2D monolayers with similar or dis-similar materials, a number of synthetic routes essentially based on the disintegration of bulk (e.g., chemical exfoliation) or the integration of atomic constituents (e.g., vapor phase growth) have been explored. Despite a large body of data available on the chemical synthesis of TMDCs, experimental strategies with high repeatability of control over film thickness, phase and compositional purity remain elusive, which calls for innovative synthetic concepts offering, for instance, self-limited growth in the z-direction and homogeneous lateral topography. This review summarizes the recent conceptual advancements in the growth of layered van der Waals TMDCs from both mixtures of metal and chalcogen sources (multi-source precursors; MSPs) and from molecular compounds containing metals and chalcogens in one starting material (single-source precursor; SSPs). The critical evaluation of the strengths, limitations and opportunities of MSP and SSP approaches is provided as a guideline for the fabrication of TMDCs from commercial and customized molecular precursors. For example, alternative synthetic pathways using tailored molecular precursors circumvent the challenges of differential nucleation and crystal growth kinetics that are invariably associated with conventional gas phase chemical vapor transport (CVT) and chemical vapor deposition (CVD) of a mixture of components. The aspects of achieving high compositional purity and alternatives to minimize competing reactions or side products are discussed in the context of efficient chemical synthesis of TMDCs. Moreover, a critical analysis of the potential opportunities and existing bottlenecks in the synthesis of TMDCs and their intrinsic properties is provided.

Effect of atomic configuration and spin-orbit coupling on thermodynamic stability and electronic bandgap of monolayer 2H-Mo1-xWxS2 solid solutions

Through a combination of density functional theory calculations and cluster-expansion formalism, the effect of the configuration of the transition metal atoms and spin-orbit coupling on the thermodynamic stability and electronic bandgap of monolayer 2H-Mo1-xWxS2 is investigated. Our investigation reveals that, in spite of exhibiting a weak ordering tendency of Mo and W atoms at 0 K, monolayer 2H-Mo1-xWxS2 is thermodynamically stable as a single-phase random solid solution across the entire composition range at temperatures higher than 45 K. The spin-orbit coupling effect, induced mainly by W atoms, is found to have a minimal impact on the mixing thermodynamics of Mo and W atoms in monolayer 2H-Mo1-xWxS2; however, it significantly induces change in the electronic bandgap of the monolayer solid solution. We find that the band-gap energies of ordered and disordered solid solutions of monolayer 2H-Mo1-xWxS2 do not follow Vegard's law. In addition, the degree of the SOC-induced change in band-gap energy of monolayer 2H-Mo1-xWxS2 solid solutions not only depends on the Mo and W contents, but for a given alloy composition it is also affected by the configuration of the Mo and W atoms. This poses a challenge of fine-tuning the bandgap of monolayer 2H-Mo1-xWxS2 in practice just by varying the contents of Mo and W.

Size-dependent phase stability in transition metal dichalcogenide nanoparticles controlled by metal substrates

Nanomaterials based on MoS₂ and related transition metal dichalcogenides (TMDCs) are remarkably versatile; MoS₂ nanoparticles are proven catalysts for processes such as hydrodesulphurization and the hydrogen evolution reaction, and transition metal dichalcogenides in general have recently emerged as novel 2D components for nanoscale electronics and optoelectronics. The properties of such materials are intimately related to their structure and dimensionality. For example, only the edges exposed by MoS₂ nanoparticles (NPs) are catalytically active, and extended MoS₂ systems show different character (direct or indirect gap semiconducting, or metallic) depending on their thickness and crystallographic phase. In this work, we show how particle size and interaction with a metal surface affect the stability and properties of different MoS₂ NPs and the resulting phase diagrams. By means of calculations based on the Density Functional Theory (DFT), we address how support interactions affect MoS₂ nanoparticles of varying size, composition, and structure. We demonstrate that interaction with Au modifies the relative stability of the different nanoparticle types so that edge terminations and crystallographic phases that are metastable for free-standing nanoparticles and monolayers are expressed in the supported system. These support-effects are strongly size-dependent due to the mismatch between Au and MoS₂ lattices, which explains experimentally observed transitions in the structural phases for supported MoS₂ NPs. Accounting for vdW interactions and the contraction of the Au(111) surface underneath the MoS₂ is further found to be necessary for quantitatively reproducing experimental results. We finally find that support-induced effects on the stability of nanoparticle structures are general to TMDC nanoparticles on metal surfaces, which we demonstrate also for MoS₂ on Au(111), WS₂ on Au(111), and WS₂ on Ag(111). This work demonstrates how the properties of nanostructured transition metal dichalcogenides and similar layered systems can be modified by the choice of supporting metal.

A reversible and stable doping technique to invert the carrier polarity of MoTe2

Two-dimensional (2D) materials can be implemented in several functional devices for future optoelectronics and electronics applications. Remarkably, recent research on p-n diodes by stacking 2D materials in heterostructures or homostructures (out of plane) has been carried out extensively with novel designs that are impossible with conventional bulk semiconductor materials. However, the insight of a lateral p-n diode through a single nanoflake based on 2D material needs attention to facilitate the miniaturization of device architectures with efficient performance. Here, we have established a physical carrier-type inversion technique to invert the polarity of MoTe₂-based field-effect transistors (FETs) with deep ultraviolet (DUV) doping in (oxygen) O₂and (nitrogen) N₂gas environments. A p-type MoTe₂nanoflake transformed its polarity to n-type when irradiated under DUV illumination in an N₂gaseous atmosphere, and it returned to its original state once irradiated in an O₂gaseous environment. Further, Kelvin probe force microscopy (KPFM) measurements were employed to support our findings, where the value of the work function changed from ∼4.8 and ∼4.5 eV when p-type MoTe₂inverted to the n-type, respectively. Also, using this approach, an in-plane homogeneous p-n junction was formed and achieved a diode rectifying ratio (I_f/I_r) up to ∼3.8 × 10⁴. This effective approach for carrier-type inversion may play an important role in the advancement of functional devices.

Graphene/MoS2 Nanohybrid for Biosensors

Graphene has been studied a lot in different scientific fields because of its unique properties, including its superior conductivity, plasmonic property, and biocompatibility. More recently, transition metal dicharcogenide (TMD) nanomaterials, beyond graphene, have been widely researched due to their exceptional properties. Among the various TMD nanomaterials, molybdenum disulfide (MoS2) has attracted attention in biological fields due to its excellent biocompatibility and simple steps for synthesis. Accordingly, graphene and MoS2 have been widely studied to be applied in the development of biosensors. Moreover, nanohybrid materials developed by hybridization of graphene and MoS2 have a huge potential for developing various types of outstanding biosensors, like electrochemical-, optical-, or surface-enhanced Raman spectroscopy (SERS)-based biosensors. In this review, we will focus on materials such as graphene and MoS2. Next, their application will be discussed with regard to the development of highly sensitive biosensors based on graphene, MoS2, and nanohybrid materials composed of graphene and MoS2. In conclusion, this review will provide interdisciplinary knowledge about graphene/MoS2 nanohybrids to be applied to the biomedical field, particularly biosensors.

Mitrofanovite, Layered Platinum Telluride, for Active Hydrogen Evolution

Two-dimensional (2D) layered catalysts have been considered as a class of ideal catalysts for hydrogen evolution reaction (HER) because of their abundant active sites with almost zero Gibbs energy change for hydrogen adsorption. Despite the promising performance, the design of stable and economic electrochemical catalyst based on 2D materials remains to be resolved for industrial-scale hydrogen production. Here, we report layered platinum tellurides, mitrofanovite Pt₃Te₄, which serves as an efficient and stable catalyst for HER with an overpotential of 39.6 mV and a Tafel slope of 32.7 mV/dec together with a high current density exceeding 7000 mA/cm². Pt₃Te₄ was synthesized as nanocrystals on a metallic molybdenum ditelluride (MoTe₂) template by a rapid electrochemical method. X-ray diffraction and high-resolution transmission microscopy revealed that the Pt₃Te₄ nanocrystals have a unique layered structure with repeated monolayer units of PtTe and PtTe₂. Theoretical calculations exhibit that Pt₃Te₄ with numerous edges shows near-zero Gibbs free-energy change of hydrogen adsorption, which shows the excellent HER performance as well as the extremely large exchange current density for massive hydrogen production.

Role of Electrostatics in the Heterogeneous Interaction of Two-Dimensional Engineered MoS2 Nanosheets and Natural Clay Colloids: Influence of pH and Natural Organic Matter

Few-layered molybdenum disulfide (MoS₂) nanosheets are poised to be at the core of low-voltage electronic device development. Upon environmental release, these two-dimensional (2D) structures can interact with abundant natural geocolloids. This study probes the role of dimensionality in modulating the aggregation behavior of 2D MoS₂ nanosheets with plate-like geocolloids (i.e., homoionized kaolinite and montmorillonite clays). MoS₂ nanosheets were exfoliated using an ethanol/water mixture, and aggregation kinetics were investigated with time-resolved dynamic light scattering at low monovalent salt concentrations and at three pH levels, in the presence and absence of Suwannee River humic acid (SRHA). Results indicate that pH and particle ratios are key to modulating the stability of MoS₂/clay systems. At pH 4, aggregation of MoS₂ increased with increasing MoS₂/clay ratios and approached maximum values of 0.09 and 0.06 nm/s in the binary systems with montmorillonite and kaolinite, respectively. Electrostatic attraction facilitates heteroaggregation at pH values of 4 and 6; differences in the clay structures (i.e., face-face or face-edge aggregates) might explain the resulting MoS₂/clay aggregate configurations, which were probed via the evolution of particle size distribution. The presence of only 0.1 mg/L SRHA drastically suppresses the heteroaggregation propensity of MoS₂ nanosheets with geocolloids (to less than 0.01 nm/s at all pH values tested). The high stability of these heterogeneous systems under environmentally relevant conditions can increase the likelihood for cellular uptake and long-distance transport of MoS₂.