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Sahoo S, Kumari P, Ray SJ. CrXY (X/Y = S, Se, Te) monolayers as efficient anode materials for Li and Na-ion batteries: a first-principles study. RSC Adv 2024; 14:5771-5781. [PMID: 38362081 PMCID: PMC10864950 DOI: 10.1039/d3ra04781d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/16/2023] [Accepted: 01/25/2024] [Indexed: 02/17/2024] Open
Abstract
Over the last decade, two-dimensional (2D) materials have been of great interest in the energy storage field. Large-scale electrochemical energy storage is based on the intercalation of metal ions in layered materials having van der Waals gaps. In this work, by means of first-principles calculations, we explored the use of 2D Janus transition metal dichalcogenides (TMDs) CrSSe, CrSTe and CrSeTe as anode materials for lithium and sodium-ion batteries. To examine the electronic properties and electrochemical performance, density functional theory (DFT) calculation was used. Our research shows that lithium diffuses easily with short diffusion distances and prefers to bind effectively to the monolayer. These structures are metallic in their bare phases. The highest adsorption energy shown by CrSSe, CrSTe, and CrSeTe is -1.86 eV, -1.66 eV, -2.15 eV with a low diffusion barrier of 0.3 eV, 0.6 eV, and 0.1 eV for the Li atoms and 0.54 eV, 0.32 eV and 0.15 eV for the Na atoms, respectively. At different chemical stoichiometries, we discovered negligible average open-circuit voltages of 1.0 V, 0.52 V, 0.6 V for lithium and 0.1 V, 0.49 V, and 0.51 V for sodium atoms respectively. The storage capacities shown by CrSSe, CrSTe, and CrSeTe are 348 mA h g-1, 254 mA h g-1, 208 mA h g-1 for the Li atoms and 260 mA h g-1, 198 mA h g-1, 177 mA h g-1 for the Na atoms respectively.
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Affiliation(s)
- Shubham Sahoo
- Department of Physics, Indian Institute of Technology Patna Bihta Bihar 801103 India
| | - Puja Kumari
- Department of Physics, Indian Institute of Technology Patna Bihta Bihar 801103 India
| | - Soumya Jyoti Ray
- Department of Physics, Indian Institute of Technology Patna Bihta Bihar 801103 India
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2
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Han R, Xue X, Yan Y. Hole-Doping-Induced Perpendicular Magnetic Anisotropy and High Curie Temperature in a CrSX (X = Cl, Br, I) Semiconductor Monolayer. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:3105. [PMID: 38133001 PMCID: PMC10745588 DOI: 10.3390/nano13243105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 12/01/2023] [Accepted: 12/06/2023] [Indexed: 12/23/2023]
Abstract
A large perpendicular magnetic anisotropy and a high Curie temperature (TC) are crucial for the application of two-dimensional (2D) intrinsic ferromagnets to spintronic devices. Here, we investigated the electronic and magnetic properties of carrier-doped Van der Waals layered CrSX (X = Cl, Br, I) ferromagnets using first-principles calculations. It was found that hole doping can increase the magnitude of the magnetic anisotropy energy (MAE) and change the orientation of the easy magnetization axis at small doping amounts of 2.37 × 1013, 3.98 × 1012, and 3.33 × 1012/cm2 for CrSCl, CrSBr, and CrSI monolayers, respectively. The maximum values of the MAE reach 57, 133, and 1597 μeV/u.c. for the critical hole-doped CrSCl, CrSBr, and CrSI with spin orientation along the (001) direction, respectively. Furthermore, the Fermi energy level of lightly hole-doped CrSX (X = Cl, Br, I) moves into the spin-up valence band, leading to the CrSX (X = Cl, Br, I) magnetic semiconductor monolayer becoming first a half-metal and then a metal. In addition, the TC can also be increased up to 305, 317, and 345 K for CrSCl, CrSBr, and CrSI monolayers at doping amounts of 5.94 × 1014, 5.78 × 1014, and 5.55 × 1014/cm2, respectively. These properties suggest that the hole-doping process can render 2D CrSX (X = Cl, Br, I) monolayers remarkable materials for application to electrically controlled spintronic devices.
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Affiliation(s)
- Ruilin Han
- School of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China
| | - Xiaomin Xue
- Institute of Theoretical Physics, Shanxi University, Taiyuan 030006, China;
| | - Yu Yan
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun 130012, China;
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3
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Kumari P, Rani S, Kar S, Kamalakar MV, Ray SJ. Strain-controlled spin transport in a two-dimensional (2D) nanomagnet. Sci Rep 2023; 13:16599. [PMID: 37789039 PMCID: PMC10547692 DOI: 10.1038/s41598-023-43025-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 09/18/2023] [Indexed: 10/05/2023] Open
Abstract
Semiconductors with controllable electronic transport coupled with magnetic behaviour, offering programmable spin arrangements present enticing potential for next generation intelligent technologies. Integrating and linking these two properties has been a long standing challenge for material researchers. Recent discoveries in two-dimensional (2D) magnet shows an ability to tune and control the electronic and magnetic phases at ambient temperature. Here, we illustrate controlled spin transport within the magnetic phase of the 2D semiconductor CrOBr and reveal a substantial connection between its magnetic order and charge carriers. First, we systematically analyse the strain-induced electronic behaviour of 2D CrOBr using density functional theory calculations. Our study demonstrates the phase transition from a magnetic semiconductor → half metal → magnetic metal in the material under strain application, creating intriguing spin-resolved conductance with 100% spin polarisation and spin-injection efficiency. Additionally, the spin-polarised current-voltage (I-V) trend displayed conductance variations with high strain-assisted tunability and a peak-to-valley ratio as well as switching efficiency. Our study reveals that CrOBr can exhibit highly anisotropic behaviour with perfect spin filtering, offering new implications for strain engineered magneto-electronic devices.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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4
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Kar S, Kumari P, Kamalakar MV, Ray SJ. Twist-assisted optoelectronic phase control in two-dimensional (2D) Janus heterostructures. Sci Rep 2023; 13:13696. [PMID: 37608024 PMCID: PMC10444812 DOI: 10.1038/s41598-023-39993-8] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 08/03/2023] [Indexed: 08/24/2023] Open
Abstract
Atomically thin two-dimensional (2D) Janus materials and their Van der Waals heterostructures (vdWHs) have emerged as a new class of intriguing semiconductor materials due to their versatile application in electronic and optoelectronic devices. Herein, We have invstigated most probable arrangements of different inhomogeneous heterostructures employing one layer of transition metal dichalcogenide, TMD (MoS2, WS2, MoSe2, and WSe2) piled on the top of Janus TMD (MoSeTe or WSeTe) and investigated their structural, electronic as well as optical properties through first-principles based calculations. After that, we applied twist engineering between the monolayers from 0[Formula: see text] 60[Formula: see text] twist angle, which delivers lattice reconstruction and improves the performance of the vdWHs due to interlayer coupling. The result reveals that all the proposed vdWHs are dynamically and thermodynamically stable. Some vdWHs such as MoS2/MoSeTe, WS2/WSeTe, MoS2/WSeTe, MoSe2/MoSeTe, and WS2/MoSeTe exhibit direct bandgap with type-II band alignment at some specific twist angle, which shows potential for future photovoltaic devices. Moreover, the electronic property and carrier mobility can be effectively tuned in the vdWHs compared to the respective monolayers. Furthermore, the visible optical absorption of all the Janus vdWHs at [Formula: see text] = 0[Formula: see text] can be significantly enhanced due to the weak inter-layer coupling and redistribution of the charges. Therefore, the interlayer twisting not only provides an opportunity to observe new exciting properties but also gives a novel route to modulate the electronic and optoelectronic properties of the heterostructure for practical applications.
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Affiliation(s)
- S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Zhang M, Hu Q, Huang Y, Hua C, Cheng M, Liu Z, Song S, Wang F, Lu H, He P, Cao GH, Xu ZA, Lu Y, Yang J, Zheng Y. Spin-Lattice Coupled Metamagnetism in Frustrated van der Waals Magnet CrOCl. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300964. [PMID: 37066740 DOI: 10.1002/smll.202300964] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2023] [Revised: 03/29/2023] [Indexed: 06/19/2023]
Abstract
The long-range magnetic ordering in frustrated magnetic systems is stabilized by coupling magnetic moments to various degrees of freedom, for example, by enhancing magnetic anisotropy via lattice distortion. Here, the unconventional spin-lattice coupled metamagnetic properties of atomically-thin CrOCl, a van der Waals antiferromagnet with inherent magnetic frustration rooted in the staggered square lattice, are reported. Using temperature- and angle-dependent tunneling magnetoconductance (TMC), in complementary with magnetic torque and first-principles calculations, the antiferromagnetic (AFM)-to-ferrimagnetic (FiM) metamagnetic transitions (MTs) of few-layer CrOCl are revealed to be triggered by collective magnetic moment flipping rather than the established spin-flop mechanism, when external magnetic field (H) enforces a lattice reconstruction interlocked with the five-fold periodicity of the FiM phase. The spin-lattice coupled MTs are manifested by drastic jumps in TMC, which show anomalous upshifts at the transition thresholds and persist much higher above the AFM Néel temperature. While the MTs exhibit distinctive triaxial anisotropy, reflecting divergent magnetocrystalline anisotropy of the c-axis AFM ground state, the resulting FiM phase has an a-c easy plane in which the magnetization axis is freely rotated by H. At the 2D limit, such a field-tunable FiM phase may provide unique opportunities to explore exotic emergent phenomena and novel spintronics devices.
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Affiliation(s)
- Minjie Zhang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Qifeng Hu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yuqiang Huang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Chenqiang Hua
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Man Cheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zhou Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Shijie Song
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Fanggui Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Hengzhe Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Pimo He
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Guang-Han Cao
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yunhao Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yi Zheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
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6
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Gu P, Sun Y, Wang C, Peng Y, Zhu Y, Cheng X, Yuan K, Lyu C, Liu X, Tan Q, Zhang Q, Gu L, Wang Z, Wang H, Han Z, Watanabe K, Taniguchi T, Yang J, Zhang J, Ji W, Tan PH, Ye Y. Magnetic Phase Transitions and Magnetoelastic Coupling in a Two-Dimensional Stripy Antiferromagnet. NANO LETTERS 2022; 22:1233-1241. [PMID: 35041438 DOI: 10.1021/acs.nanolett.1c04373] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Materials with a quasi-one-dimensional stripy magnetic order often exhibit low crystal and magnetic symmetries, thus allowing the presence of various energy coupling terms and giving rise to macroscopic interplay between spin, charge, and phonon. In this work, we performed optical, electrical and magnetic characterizations combined with first-principles calculations on a van der Waals antiferromagnetic insulator chromium oxychloride (CrOCl). We detected the subtle phase transition behaviors of exfoliated CrOCl under varying temperature and magnetic field and clarified its controversial spin structures. We found that the antiferromagnetism and its air stability persist down to few-layer samples, making it a promising candidate for future 2D spintronic devices. Additionally, we verified the magnetoelastic coupling effect in CrOCl, allowing for the potential manipulation of the magnetic states via electric field or strain. These virtues of CrOCl provide us with an ideal platform for fundamental research on spin-charge, spin-phonon coupling, and spin-interactions.
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Affiliation(s)
- Pingfan Gu
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Yujia Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Cong Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
| | - Yuxuan Peng
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Yaozheng Zhu
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Xing Cheng
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Kai Yuan
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Chao Lyu
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Xuelu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qinghai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhi Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 03006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 03006, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong 226010, Jiangsu China
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Xu C, Zhang J, Guo Z, Zhang S, Yuan X, Wang L. A first-principles study on the electronic property and magnetic anisotropy of ferromagnetic CrOF and CrOCl monolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:195804. [PMID: 33561851 DOI: 10.1088/1361-648x/abe477] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2020] [Accepted: 02/09/2021] [Indexed: 06/12/2023]
Abstract
Two-dimensional ferromagnetic materials with large perpendicular magnetic anisotropy (PMA) hold great potential in realizing low critical switching current, high thermal stability and high density nonvolatile storage in magnetic random-access memories. Our first-principles calculations reveal that CrOF and CrOCl monolayers (MLs) are two-dimensional (2D) ferromagnetic semiconductors with out-of-plane magnetic easy axis, and PMAs of CrOF and CrOCl MLs are mainly contributed by Cr atoms. The magnetic anisotropy of CrOF and CrOCl MLs can be controlled and enhanced by applying biaxial strain. Tensile strain can further enhance PMAs of CrOF and CrOCl MLs by 82.9% and 161.0% higher than those of unstrained systems, respectively. In addition, appropriate compressive strain can switch the magnetic easy axis of CrOF and CrOCl MLs from out-of-plane direction to in-plane direction. The semiconductor natures of CrOF and CrOCl MLs robust against biaxial strain, the band gaps of these systems under biaxial strain are in the range of 1.26 eV to 2.40 eV. By applying biaxial strain, the Curie temperatures of CrOF and CrOCl MLs increase up to 282 K and 163 K, respectively. These tunable properties suggest that CrOF and CrOCl MLs have great application potentials for magnetic data storage.
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Affiliation(s)
- Chunyan Xu
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Jing Zhang
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Zexuan Guo
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Siqi Zhang
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Xiaoxi Yuan
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Lingrui Wang
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
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Nair AK, Ray SJ. Electronic phase-crossover and room temperature ferromagnetism in a two-dimensional (2D) spin lattice. RSC Adv 2020; 11:946-952. [PMID: 35423672 PMCID: PMC8693316 DOI: 10.1039/d0ra09726h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 11/26/2020] [Indexed: 12/29/2022] Open
Abstract
Tuning of system properties such as electronic and magnetic behaviour through various engineering techniques is necessary for optoelectronic and spintronic applications. In our current work, we employ first-principles methodologies along with Monte-Carlo simulations to comprehensively study the electronic and magnetic behaviour of 2-dimensional (2D) Cr2Ge2Te6 (Tc = 61 K), uncovering the impact of strain and electric field on the material. In the presence of strain, we were able to achieve high temperature magnetic ordering in the layer along with observable phase crossover in the electronic state of the system, where the system exhibited transference from semiconducting to half-metallic state. Finally, on coupling strain and electric field remarkable increase in Curie temperature (Tc) ∼ 331 K (above 5-fold enhancement from pristine configuration) was observed, which is very well above room temperature. Our inferences have shed light on a relatively new type of coupling method involving strain and electric field which may have tremendous implications in the development of 2D spintronic architecture. In the presence of strain, high temperature magnetic ordering in Cr2Ge2Te6 was observed with electronic phase crossover from semiconducting to half-metallic state. On coupling strain and electric field, the Curie temperature reaches 331 K.![]()
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Affiliation(s)
- A K Nair
- Department of Physics, Indian Institute of Technology Patna Bihta 801106 India
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna Bihta 801106 India
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