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The Kurtz-Perry Powder Technique Revisited: A Study of the Effect of Reference Selection on Powder Second-Harmonic Generation Response. Molecules 2023; 28:molecules28031116. [PMID: 36770783 PMCID: PMC9918962 DOI: 10.3390/molecules28031116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Revised: 01/08/2023] [Accepted: 01/09/2023] [Indexed: 01/24/2023] Open
Abstract
The accurate evaluation of nonlinear optical (NLO) coefficient, the main parameter affecting light conversion efficiency, plays a crucial role in the development of NLO materials. The Kurtz-Perry powder technique can evaluate second-harmonic generation (SHG) intensity in pristine powder form, saving a significant amount of time and energy in the preliminary screening of materials. However, the Kurtz-Perry method has recently been subject to some controversy due to the limitations of the Kurtz-Perry theory and the oversimplified experimental operation. Therefore, it is very meaningful to revisit and develop the Kurtz-Perry technique. In this work, on the basis of introducing the light scattering effect into the original Kurtz-Perry theory, the theoretical expression of second-harmonic generation intensity with respect to band gap and refractive index are analyzed. In addition, the reference-dependent SHG measurements were carried out on polycrystalline LiB3O5 (LBO), AgGaQ2 (Q = S, Se), BaGa4Q7 (Q = S, Se), and ZnGeP2 (ZGP), and the results of SHG response emphasize the importance of using appropriate references to the Kurtz-Perry method. In order to obtain reliable values of nonlinear coefficients, two criteria for selecting a reference compound were proposed: (1) it should possess a band gap close to that of the sample to be measured and (2) it should possess a refractive index close to that of the sample to be measured. This work might shed light on improvements in accuracy that can be made for effective NLO coefficients obtained using the Kurtz-Perry method.
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Zhang Y, Wang Y, Dai Y, Bai X, Hu X, Du L, Hu H, Yang X, Li D, Dai Q, Hasan T, Sun Z. Chirality logic gates. SCIENCE ADVANCES 2022; 8:eabq8246. [PMID: 36490340 PMCID: PMC9733934 DOI: 10.1126/sciadv.abq8246] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Accepted: 10/31/2022] [Indexed: 06/17/2023]
Abstract
The ever-growing demand for faster and more efficient data transfer and processing has brought optical computation strategies to the forefront of research in next-generation computing. Here, we report a universal computing approach with the chirality degree of freedom. By exploiting the crystal symmetry-enabled well-known chiral selection rules, we demonstrate the viability of the concept in bulk silica crystals and atomically thin semiconductors and create ultrafast (<100-fs) all-optical chirality logic gates (XNOR, NOR, AND, XOR, OR, and NAND) and a half adder. We also validate the unique advantages of chirality gates by realizing multiple gates with simultaneous operation in a single device and electrical control. Our first demonstrations of logic gates using chiral selection rules suggest that optical chirality could provide a powerful degree of freedom for future optical computing.
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Affiliation(s)
- Yi Zhang
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo 02150, Finland
| | - Yadong Wang
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
| | - Yunyun Dai
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
| | - Xueyin Bai
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
| | - Xuerong Hu
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
- Institute of Photonics and Photon Technology, Northwest University, Xi’an 710069, China
| | - Luojun Du
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
| | - Hai Hu
- CAS Key Laboratory of Nanophotonic Materials and Devices, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Xiaoxia Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Diao Li
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Tawfique Hasan
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo 02150, Finland
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Wang Y, Iyikanat F, Rostami H, Bai X, Hu X, Das S, Dai Y, Du L, Zhang Y, Li S, Lipsanen H, García de Abajo FJ, Sun Z. Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107104. [PMID: 34743375 DOI: 10.1002/adma.202107104] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Revised: 10/23/2021] [Indexed: 05/06/2023]
Abstract
Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, various relevant electronic states in monolayer MoS2 , such as multiple excitonic Rydberg states and free-particle energy bands are probed with a high relative contrast of up to ≥200 via broadband (from ≈1.79 to 3.10 eV) static third-harmonic spectroscopy (THS), which is further supported by theoretical calculations. Moreover, transient THS is introduced to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ≈94% at ≈2.18 eV, providing direct evidence of dominant carrier relaxation processes associated with carrier-exciton and carrier-phonon interactions. The results indicate that static and transient THS are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.
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Affiliation(s)
- Yadong Wang
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Fadil Iyikanat
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Habib Rostami
- Nordita, KTH Royal Institute of Technology and Stockholm University, Hannes Alfvéns väg 12, Stockholm, 10691, Sweden
| | - Xueyin Bai
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Xuerong Hu
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Yunyun Dai
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Luojun Du
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Yi Zhang
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, Barcelona, 08010, Spain
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
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Wang Y, Das S, Iyikanat F, Dai Y, Li S, Guo X, Yang X, Cheng J, Hu X, Ghotbi M, Ye F, Lipsanen H, Wu S, Hasan T, Gan X, Liu K, Sun D, Dai Q, García de Abajo FJ, Zhao J, Sun Z. Giant All-Optical Modulation of Second-Harmonic Generation Mediated by Dark Excitons. ACS PHOTONICS 2021; 8:2320-2328. [PMID: 34476288 PMCID: PMC8377711 DOI: 10.1021/acsphotonics.1c00466] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2021] [Indexed: 05/23/2023]
Abstract
All-optical control of nonlinear photonic processes in nanomaterials is of significant interest from a fundamental viewpoint and with regard to applications ranging from ultrafast data processing to spectroscopy and quantum technology. However, these applications rely on a high degree of control over the nonlinear response, which still remains elusive. Here, we demonstrate giant and broadband all-optical ultrafast modulation of second-harmonic generation (SHG) in monolayer transition-metal dichalcogenides mediated by the modified excitonic oscillation strength produced upon optical pumping. We reveal a dominant role of dark excitons to enhance SHG by up to a factor of ∼386 at room temperature, 2 orders of magnitude larger than the current state-of-the-art all-optical modulation results. The amplitude and sign of the observed SHG modulation can be adjusted over a broad spectral range spanning a few electronvolts with ultrafast response down to the sub-picosecond scale via different carrier dynamics. Our results not only introduce an efficient method to study intriguing exciton dynamics, but also reveal a new mechanism involving dark excitons to regulate all-optical nonlinear photonics.
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Affiliation(s)
- Yadong Wang
- MOE
Key Laboratory of Material Physics and Chemistry under Extraordinary
Conditions, and Shaanxi Key Laboratory of Optical Information Technology,
School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Susobhan Das
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Fadil Iyikanat
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, 08860 Castelldefels (Barcelona), Spain
| | - Yunyun Dai
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Shisheng Li
- International
Center for Young Scientists, National Institute
for Materials Science, Tsukuba 305-0044, Japan
| | - Xiangdong Guo
- CAS
Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory
of Standardization and Measurement for Nanotechnology, CAS Center
for Excellence in Nanoscience, National Center for Nanoscience and
Technology, Beijing 100190, China
| | - Xiaoxia Yang
- CAS
Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory
of Standardization and Measurement for Nanotechnology, CAS Center
for Excellence in Nanoscience, National Center for Nanoscience and
Technology, Beijing 100190, China
| | - Jinluo Cheng
- Changchun
Institute of Optics, Fine Mechanics and Physics, Chinese Academy of
Sciences, Changchun, Jilin 130033, China
| | - Xuerong Hu
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
- International
Cooperation Base of Photoelectric Technology and Functional Materials,
and Institute of Photonics and Photon-Technology, Northwest University, Xi’an 710069, China
| | - Masood Ghotbi
- Department
of Physics, University of Kurdistan, Pasdaran St., Sanandaj 66177-15177, Iran
| | - Fangwei Ye
- School
of Physics and Astronomy, Shanghai Jiao
Tong University, Shanghai 200240, China
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Shiwei Wu
- State
Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano
Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Tawfique Hasan
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Xuetao Gan
- MOE
Key Laboratory of Material Physics and Chemistry under Extraordinary
Conditions, and Shaanxi Key Laboratory of Optical Information Technology,
School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Kaihui Liu
- State
Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China
| | - Dong Sun
- International
Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Qing Dai
- CAS
Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory
of Standardization and Measurement for Nanotechnology, CAS Center
for Excellence in Nanoscience, National Center for Nanoscience and
Technology, Beijing 100190, China
| | - F. Javier García de Abajo
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, 08860 Castelldefels (Barcelona), Spain
- ICREA-Institució
Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Jianlin Zhao
- MOE
Key Laboratory of Material Physics and Chemistry under Extraordinary
Conditions, and Shaanxi Key Laboratory of Optical Information Technology,
School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo 02150, Finland
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Dai Y, Wang Y, Das S, Li S, Xue H, Mohsen A, Sun Z. Broadband Plasmon-Enhanced Four-Wave Mixing in Monolayer MoS 2. NANO LETTERS 2021; 21:6321-6327. [PMID: 34279968 PMCID: PMC8323120 DOI: 10.1021/acs.nanolett.1c02381] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2021] [Revised: 07/12/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional transition-metal dichalcogenide monolayers have remarkably large optical nonlinearity. However, the nonlinear optical conversion efficiency in monolayer transition-metal dichalcogenides is typically low due to small light-matter interaction length at the atomic thickness, which significantly obstructs their applications. Here, for the first time, we report broadband (up to ∼150 nm) enhancement of optical nonlinearity in monolayer MoS2 with plasmonic structures. Substantial enhancement of four-wave mixing is demonstrated with the enhancement factor up to three orders of magnitude for broadband frequency conversion, covering the major visible spectral region. The equivalent third-order nonlinearity of the hybrid MoS2-plasmonic structure is in the order of 10-17 m2/V2, far superior (∼10-100-times larger) to the widely used conventional bulk materials (e.g., LiNbO3, BBO) and nanomaterials (e.g., gold nanofilms). Such a considerable and broadband enhancement arises from the strongly confined electric field in the plasmonic structure, promising for numerous nonlinear photonic applications of two-dimensional materials.
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Affiliation(s)
- Yunyun Dai
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Yadong Wang
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Susobhan Das
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Shisheng Li
- International
Center for Young Scientists (ICYS), National
Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
| | - Hui Xue
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Ahmadi Mohsen
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo 02150, Finland
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Patil V, Kim J, Agrawal K, Park T, Yi J, Aoki N, Watanabe K, Taniguchi T, Kim GH. High mobility field-effect transistors based on MoS 2crystals grown by the flux method. NANOTECHNOLOGY 2021; 32:325603. [PMID: 33845468 DOI: 10.1088/1361-6528/abf6f1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2020] [Accepted: 04/12/2021] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) molybdenum disulphide (MoS2) transition metal dichalcogenides (TMDs) have great potential for use in optical and electronic device applications; however, the performance of MoS2is limited by its crystal quality, which serves as a measure of the defects and grain boundaries in the grown material. Therefore, the high-quality growth of MoS2crystals continues to be a critical issue. In this context, we propose the formation of high-quality MoS2crystals via the flux method. The resulting electrical properties demonstrate the significant impact of crystal morphology on the performance of MoS2field-effect transistors. MoS2made with a relatively higher concentration of sulphur (a molar ratio of 2.2) and at a cooling rate of 2.5 °C h-1yielded good quality and optimally sized crystals. The room-temperature and low-temperature (77 K) electrical transport properties of MoS2field-effect transistors (FETs) were studied in detail, with and without the use of a hexagonal boron nitride (h-BN) dielectric to address the mobility degradation issue due to scattering at the SiO2/2D material interface. A maximum field-effect mobility of 113 cm2V-1s-1was achieved at 77 K for the MoS2/h-BN FET following high-quality crystal formation by the flux method. Our results confirm the achievement of large-scale high-quality crystal growth with reduced defect density using the flux method and are key to achieving higher mobility in MoS2FET devices in parallel with commercially accessible MoS2crystals.
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Affiliation(s)
- Vilas Patil
- School of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Jihyun Kim
- Centre for Quantum Materials and Superconductivity (CQMS), Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Khushabu Agrawal
- School of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Tuson Park
- Centre for Quantum Materials and Superconductivity (CQMS), Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Junsin Yi
- School of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
| | - Kenji Watanabe
- Research Centre for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Centre for Materials Nano-Architectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Gil-Ho Kim
- School of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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Sahin E, Zabelich B, Yakar O, Nitiss E, Liu J, Wang RN, Kippenberg TJ, Brès CS. Difference-frequency generation in optically poled silicon nitride waveguides. NANOPHOTONICS 2021; 10:1923-1930. [PMID: 35880094 PMCID: PMC8865395 DOI: 10.1515/nanoph-2021-0080] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2021] [Revised: 04/11/2021] [Accepted: 04/13/2021] [Indexed: 05/25/2023]
Abstract
Difference-frequency generation (DFG) is elemental for nonlinear parametric processes such as optical parametric oscillation and is instrumental for generating coherent light at long wavelengths, especially in the middle infrared. Second-order nonlinear frequency conversion processes like DFG require a second-order susceptibility χ (2), which is absent in centrosymmetric materials, e.g. silicon-based platforms. All-optical poling is a versatile method for inducing an effective χ (2) in centrosymmetric materials through periodic self-organization of charges. Such all-optically inscribed grating can compensate for the absence of the inherent second-order nonlinearity in integrated photonics platforms. Relying on this induced effective χ (2) in stoichiometric silicon nitride (Si3N4) waveguides, second-order nonlinear frequency conversion processes, such as second-harmonic generation, were previously demonstrated. However up to now, DFG remained out of reach. Here, we report both near- and non-degenerate DFG in all-optically poled Si3N4 waveguides. Exploiting dispersion engineering, particularly rethinking how dispersion can be leveraged to satisfy multiple processes simultaneously, we unlock nonlinear frequency conversion near 2 μm relying on all-optical poling at telecommunication wavelengths. The experimental results are in excellent agreement with theoretically predicted behaviours, validating our approach and opening the way for the design of new types of integrated sources in silicon photonics.
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Affiliation(s)
- Ezgi Sahin
- Ecole Polytechnique Fédérale de Lausanne, Photonic Systems Laboratory, 1015Lausanne, Switzerland
| | - Boris Zabelich
- Ecole Polytechnique Fédérale de Lausanne, Photonic Systems Laboratory, 1015Lausanne, Switzerland
| | - Ozan Yakar
- Ecole Polytechnique Fédérale de Lausanne, Photonic Systems Laboratory, 1015Lausanne, Switzerland
| | - Edgars Nitiss
- Ecole Polytechnique Fédérale de Lausanne, Photonic Systems Laboratory, 1015Lausanne, Switzerland
| | - Junqiu Liu
- Ecole Polytechnique Fédérale de Lausanne, Laboratory of Photonics and Quantum Measurements, 1015Lausanne, Switzerland
| | - Rui N. Wang
- Ecole Polytechnique Fédérale de Lausanne, Laboratory of Photonics and Quantum Measurements, 1015Lausanne, Switzerland
| | - Tobias J. Kippenberg
- Ecole Polytechnique Fédérale de Lausanne, Laboratory of Photonics and Quantum Measurements, 1015Lausanne, Switzerland
| | - Camille-Sophie Brès
- Ecole Polytechnique Fédérale de Lausanne, Photonic Systems Laboratory, 1015Lausanne, Switzerland
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