Surface passivation extends single and biexciton lifetimes of InP quantum dots

Surface defect mitigation via alkyl-ligand-controlled purification for stable and high-luminescence perovskite quantum dots

Perovskite quantum dots (PQDs) have received considerable attention as fluorescent materials due to their excellent optical properties. However, because PQDs contain ionic bonds, they have the disadvantage of being vulnerable to environmental conditions, so improving their stability is essential. Indeed, recent research has focused on improving both the stability and luminescence of PQDs by mixing them with methyl acetate (MeOAc) to suppress surface defects via purification. MeOAc reacts with the surface ligands of PQDs, resulting in ligand-controlled purification. However, while the ligands are limited for the PQD synthesis, the effect of ligand alkyl-chain length has not been reported. Therefore, we report herein a strategy for obtaining stable PQDs with tunable performances by using amine ligands of various chain lengths. The amine ligand is selected because it is very effective in interacting with the halide vacancies present on the surface of the perovskite crystal structure. The results indicate that MeOAc becomes less effective as the chain length of the ligand is increased, and more effective as the chain length is decreased. Consequently, PQDs treated with MeOAc and a short-chain ligand afford a quantum yield (QY) of 79.2% and are highly stable when exposed to thermal and ambient conditions. Therefore, we suggest a facile approach to suppressing the degradation of PQDs during the fabrication process.

Tailoring Auger Recombination Dynamics in CsPbI3 Perovskite Nanocrystals via Transition Metal Doping

Auger recombination is a pivotal process for semiconductor nanocrystals (NCs), significantly affecting charge carrier generation and collection in optoelectronic devices. This process depends mainly on the NCs' electronic structures. In our study, we investigated Auger recombination dynamics in manganese (Mn2+)-doped CsPbI3 NCs using transient absorption (TA) spectroscopy combined with theoretical and experimental structural characterization. Our results show that Mn2+ doping accelerates Auger recombination, reducing the biexciton lifetime from 146 to 74 ps with increasing Mn doping concentration up to 10%. This accelerated Auger recombination in Mn-doped NCs is attributed to increased band edge wave function overlap of excitons and a larger density of final states of Auger recombination due to Mn orbital involvement. Moreover, Mn doping reduces the dielectric screening of the excitons, which also contributes to the accelerated Auger recombination. Our study demonstrates the potential of element doping to regulate Auger recombination rates by modifying the materials' electronic structure.

Near-Unity Photoluminescence Quantum Yield of Core-Only InP Quantum Dots via a Simple Postsynthetic InF3 Treatment

Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we present a simple postsynthesis HF-free treatment that is based on passivating the surface of the InP QDs with InF3. For optimized conditions, this results in a PLQY as high as 93% and nearly monoexponential photoluminescence decay. Etching of the particle surface is entirely avoided if the treatment is performed under stringent acid-free conditions. We show that this treatment is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core-shell QDs, with significantly higher absorption coefficients in the blue, and with potential for faster charge transport. These are important advantages when considering InP QDs for use in micro-LEDs or photodetectors.

Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals

The properties of colloidal quantum-confined semiconductor nanocrystals (NCs), including zero-dimensional (0D) quantum dots, 1D nanorods, 2D nanoplatelets, and their heterostructures, can be tuned through their size, dimensionality, and material composition. In their photovoltaic and photocatalytic applications, a key step is to generate spatially separated and long-lived electrons and holes by interfacial charge transfer. These charge transfer properties have been extensively studied recently, which is the subject of this Review. The Review starts with a summary of the electronic structure and optical properties of 0D-2D nanocrystals, followed by the advances in wave function engineering, a novel way to control the spatial distribution of electrons and holes, through their size, dimension, and composition. It discusses the dependence of NC charge transfer on various parameters and the development of the Auger-assisted charge transfer model. Recent advances in understanding multiple exciton generation, decay, and dissociation are also discussed, with an emphasis on multiple carrier transfer. Finally, the applications of nanocrystal-based systems for photocatalysis are reviewed, focusing on the photodriven charge separation and recombination processes that dictate the function and performance of these materials. The Review ends with a summary and outlook of key remaining challenges and promising future directions in the field.

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.

Interface defects repair of core/shell quantum dots through halide ion penetration

The interface defects of core-shell colloidal quantum dots (QDs) affect their optoelectronic properties and charge transport characteristics. However, the limited available strategies pose challenges in the comprehensive control of these interface defects. Herein, we introduce a versatile strategy that effectively addresses both surface and interface defects in QDs through simple post-synthesis treatment. Through the combination of fine chemical etching methods and spectroscopic analysis, we have revealed that halogens can diffuse within the crystal structure at elevated temperatures, acting as "repairmen" to rectify oxidation and significantly reducing interface defects within the QDs. Under the guidance of this protocol, InP core/shell QDs were synthesized by a hydrofluoric acid-free method with a full width at half-maximum of 37.0 nm and an absolute quantum yield of 86%. To further underscore the generality of this strategy, we successfully applied it to CdSe core/shell QDs as well. These findings provide fundamental insights into interface defect engineering and contribute to the advancement of innovative solutions for semiconductor nanomaterials.

InP/ZnS quantum dot photoluminescence modulation via in situ H2S interface engineering

InP quantum dots (QDs) are attracting significant interest as a potentially less toxic alternative to Cd-based QDs in many research areas. Although InP-based core/shell QDs with excellent photoluminescence properties have been reported so far, sophisticated interface treatment to eliminate defects is often necessary. Herein, using aminophosphine as a seeding source of phosphorus, we find that H₂S can be efficiently generated from the reaction between a thiol and an alkylamine at high temperatures. Apart from general comprehension that H₂S acts as a S precursor, it is revealed that with core etching by H₂S, the interface between InP and ZnS can be reconstructed with S^2- incorporation. Such a transition layer can reduce inherent defects at the interface, resulting in significant photoluminescence (PL) enhancement. Meanwhile, the size of the InP core could be further controlled by H₂S etching, which offers a feasible process to obtain wide band gap InP-based QDs with blue emission.

Electron Trapping Prolongs the Lifetime of Charge-Separated States in 2D Perovskite Nanoplatelet-Hole Acceptor Complexes

Two-dimensional (2D) lead halide perovskite nanoplatelets (NPLs) are promising materials for blue light emission because of the strong quantum confinement in the 2D morphology. However, the identity of carrier traps and the trap influence on charge transfer in these NPLs remain unclear. Herein, transient absorption studies revealed two types of electron traps in 3 monolayer lead bromide perovskite NPLs with trapping lifetime of 9.0 ± 0.6 and 516 ± 59 ps, respectively, while no hole traps were observed. Systematic charge transfer experiments show that electron traps have negligible influence on ultrafast electron transfer or hole transfer but extend the half-lifetime of the charge-separated state from 2.1 ± 0.1 to 68 ± 3 ns after hole transfer, which is explained by the reduced electron-hole overlap. This work contributes to the understanding of the fundamental carrier dynamics in 2D perovskite NPLs and offers guidelines for boosting their performance in optoelectronics and photocatalysis.

Bright InP Quantum Dots by Mid-Synthetic Modification with Zinc Halides

InP quantum dots (QDs) attract growing interest in recent years, owing to their environmental advantages upon applications in display and lighting. However, compared to Cd-based QDs and Pb-based perovskites, the synthesis of InP QDs with high optical quality is relatively more difficult. Here, we established a mid-synthetic modification approach to improve the optical properties of InP-based QDs. Tris(dimethylamino)phosphine ((DMA)₃P) and indium iodide were used to prepare InP QDs with a green emission (∼527 nm). By introducing zinc halides (ZnX₂) during the mid-synthetic process, the photoluminescence quantum yield (PLQY) of the resulting InP/ZnSeS/ZnS core/shell/shell QDs was increased to >70%, and the full-width-at-half-maximum (FWHM) could be narrowed to ∼40 nm. Transmission electron microscopy clearly showed the improvement of the QDs particle size distribution after introducing ZnX₂. It was speculated that ZnX₂ was bound to the surface of QDs as a Z-type ligand, which not only passivated surface defects and suppressed the emission of defect states but also prevented Ostwald ripening. The InP cores were also activated by ZnX₂, which made the growth of the ZnSeS shell more favorable. The photoluminescence properties started to be improved significantly only when the amount of ZnX₂ exceeded 0.5 mmol. As the amount increased, more ZnX₂ was distributed around the QDs to form a ligand layer, which prevented the shell precursor from crossing the ligand layer to the surface of the InP core, thus reducing the size of the InP/ZnSeS/ZnS QDs. This work revealed a new role of ZnX₂ and found a method for InP QDs with high brightness and low FWHM by the mid-synthetic modification, which would inspire the synthesis of even better InP QDs.

Structural investigations into colour-tuneable fluorescent InZnP-based quantum dots from zinc carboxylate and aminophosphine precursors

Fluorescent InP-based quantum dots have emerged as valuable nanomaterials for display technologies, biological imaging, and optoelectronic applications. The inclusion of zinc can enhance both their emissive and structural properties and reduce interfacial defects with ZnS or CdS shells. However, the sub-particle distribution of zinc and the role this element plays often remains unclear, and it has previously proved challenging to synthesise Zn-alloyed InP-based nanoparticles using aminophosphine precursors. In this report, we describe the synthesis of alloyed InZnP using zinc carboxylates, achieving colour-tuneable fluorescence from the unshelled core materials, followed by a one-pot ZnS or CdS deposition using diethyldithiocarbamate precursors. Structural analysis revealed that the "core/shell" particles synthesised here were more accurately described as homogeneous extended alloys with the constituent shell elements diffusing through the entire core, including full-depth inclusion of zinc.

Deep Blue and Highly Emissive ZnS-Passivated InP QDs: Facile Synthesis, Characterization, and Deciphering of Their Ultrafast-to-Slow Photodynamics

InP-based quantum dots (QDs) are an environment-friendly alternative to their heavy metal-ion-based counterparts. Herein we report a simple procedure for synthesizing blue emissive InP QDs using oleic acid and oleylamine as surface ligands, yielding ultrasmall QDs with average sizes of 1.74 and 1.81 nm, respectively. Consecutive thin coating with ZnS increased the size of these QDs to 4.11 and 4.15 nm, respectively, alongside a significant enhancement of their emission intensities centered at ∼410 nm and ∼430 nm, respectively. Pure phase synthesis of these deep-blue emissive QDs is confirmed by powder X-ray diffraction (PXRD), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Armed with femtosecond to millisecond time-resolved spectroscopic techniques, we decipher the energy pathways, reflecting the effect of successive ZnS passivation on the charge carrier (electrons and holes) dynamics in the deep-blue emissive InP, InP/ZnS, and InP/ZnS/ZnS QDs. Successive coating of the InP QDs increases the intraband relaxation times from 200 to 700 fs and the lifetime of the hot electrons from 2 to 8 ps. The lifetime of the cold holes also increase from 1 to 4 ps, and remarkably, the Auger recombination escalates from 15 to 165 ps. The coating also drastically decreases the quenching by the molecular oxygen of the trapped charge carriers at the surfaces of the QDs. Our results provide clues to push further the emission of InP QDs into more energetically spectral regions and to increase the fluorescence quantum yield, targeting the construction of efficient UV-emissive light-emitting devices (LEDs).

Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine

InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)₃P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)₃P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPO_x defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m^-2 to 3.5% and 2355 cd·m^-2, respectively.

Exciton Dynamics in Colloidal CdS Quantum Dots with Intense and Stokes Shifted Photoluminescence in a Single Decay Channel

CdS quantum dots (QDs), synthesized by a sol-gel method, exhibit significantly Stokes shifted bright photoluminescence (PL), predominantly from the trap states. Surprisingly, the PL decay at the emission maximum is single-exponential. This is an unusual observation for as-prepared QDs and indicates a narrow distribution in the nature of trap states. A closer look reveals an additional fast component for the decays at shorter emission wavelengths, presumably due to the band edge emission, which remains elusive in the steady-state spectra. Indeed, a significantly narrower and blue-shifted emission band is observed in the decay-associated spectra. The contribution of this component to the steady-state PL intensity is shown to be overwhelmed by that of the significantly stronger trap emission. Exciton dynamics in the quantum dots is elucidated using transient absorption spectra, in which the stimulated emission is observed even at low pump power.

On Cordelair-Greil Model about Electrophoretic Deposition

Electrophoretic deposition (EPD) is a facile technique to deposit quantum dots (QDs) films, which can be used as the color conversion layers for display applications. To better understand the EPD process, researchers have built many models of the EPD process. However, most of these models lack solid experimental support. Here, by adopting simple yet effective solvent engineering and well-designed experiments, this study proves the Cordelair-Greil model on EPD processes. Moreover, some supplements about this model are made according to practical experiments. The experimental verification of the Cordelair-Greil model is a solid step toward revealing the dynamics of the EPD process. Furthermore, the formation of cracks in EPD deposited QD films is prevented through solvent engineering. This work proves that besides modifying the intrinsic properties of QDs, solvent engineering is also a simple, effective, and low-cost way to study the EPD process and improve the QD film qualities deposited.

The Rise and Future of Discrete Organic-Inorganic Hybrid Nanomaterials

Hybrid nanomaterials (HNs), the combination of organic semiconductor ligands attached to nanocrystal semiconductor quantum dots, have applications that span a range of practical fields, including biology, chemistry, medical imaging, and optoelectronics. Specifically, HNs operate as discrete, tunable systems that can perform prompt fluorescence, energy transfer, singlet fission, upconversion, and/or thermally activated delayed fluorescence. Interest in HNs has naturally grown over the years due to their tunability and broad spectrum of applications. This Review presents a brief introduction to the components of HNs, before expanding on the characterization and applications of HNs. Finally, the future of HN applications is discussed.

Thermally Activated Bright-State Delayed Blue Photoluminescence from InP Quantum Dots

Thermally activated delayed photoluminescence (TADPL) generated from organic chromophore-functionalized quantum dots (QDs) is potentially beneficial for persistent light generation, QD-based PL sensors, and photochemical synthesis. While previous research demonstrated that naphthoic acid-functionalized InP QDs can be employed as low-toxicity, blue-emissive TADPL materials, the electron trap states inherent in these nanocrystals inhibited the observation of TADPL emerging from the higher-lying bright states. Here, we address this challenge by employing the heterocyclic aromatic compound 8-quinolinecarboxylic acid (QCA), whose triplet energy is strategically positioned to bypass the electron trap states in InP QDs. Transient absorption and photoluminescence spectroscopies revealed the generation of bright-state TADPL from QCA-functionalized InP QDs resulting from a nearly quantitative Dexter-like triplet-triplet energy transfer (TTET) from photoexcited InP QDs to surface-anchored QCA chromophores followed by reverse TTET from these bound molecules to the InP QDs. This modification resulted in a 119-fold increase in the average PL intensity decay time with respect to the as-synthesized InP QDs.

Engineering Long-Lived Blue Photoluminescence from InP Quantum Dots Using Isomers of Naphthoic Acid

Leveraging triplet excitons in semiconductor quantum dots (QDs) in concert with surface-anchored molecules to produce long-lifetime thermally activated delayed photoluminescence (TADPL) continues to emerge as a promising technology in diverse areas including photochemical catalysis and light generation. All QDs presently used to generate TADPL in QD/molecule constructs contain toxic metals including Cd(II) and Pb(II), ultimately limiting potential real-world applications. Here, we report newly conceived blue-emitting TADPL-producing nanomaterials featuring InP QDs interfaced with 1- and 2-naphthoic acid (1-NA and 2-NA) ligands. These constitutional isomers feature similar triplet energies but disparate triplet lifetimes, translating into InP-based TADPL processes displaying two distinct average lifetime ranges upon cooling from 293 to 193 K. The time constants fall between 4.4 and 59.2 μs in the 2-NA-decorated InP QDs while further expanding between 84.2 and 733.2 μs in the corresponding 1-NA-ligated InP materials, representing a 167-fold time window. The resulting long-lived excited states enabled facile bimolecular triplet sensitization of ¹O₂ phosphorescence in the near-IR and promoted sensitized triplet-triplet annihilation photochemistry in 2,5-diphenyloxazole. We speculate that the discovery of new nanomaterials exhibiting TADPL lies on the horizon as myriad QDs can be readily derivatized using isomers of numerous classes of surface-anchoring chromophores yielding precisely regulated photophysical properties.

Preparation of InP quantum dots-TiO2 nanoparticle composites with enhanced visible light induced photocatalytic activity

Environmentally friendly InP-based quantum dots (QDs) are expected to be ideal visible-light-harvesting materials because of their unique photophysical properties. Herein, we report on the results of using a combination of...

Deciphering Ultrafast Carrier Dynamics of Eco-Friendly ZnSeTe-Based Quantum Dots: Toward High-Quality Blue-Green Emitters

Developing non-toxic and high-performance colloidal semiconductor quantum dots (CQDs) represents the inevitable route toward CQD-enabled technologies. Herein, the spectral and dynamic properties of heavy-metal-free ZnSeTe-based CQDs are investigated by transient absorption spectroscopy and theoretical modeling. We for the first time decode the ultrafast hot carrier trapping (<2 ps) and band-edge carrier trapping processes (∼6 ps) in the CQD system, which plagues the emission performance. The ZnSe/ZnSeS/ZnS shell engineering greatly suppresses the non-radiative trapping process and results in a high photoluminescence quantum yield of 88%. We demonstrate that the core/shell nano-heterostructure forms the quasi-type II configuration, in contrast to the presumed type I counterpart. Moreover, the Auger recombination and hot carrier cooling processes are revealed to be ∼454-405 ps and 160-370 fs, respectively, and their relationship with the composition in the spectral range of 470-525 nm is clarified. The above merits render these ZnSeTe CQDs as outstanding blue-green emitters for optoelectronic applications, exemplified by the white light-emitting diodes.

Increasing the Energy Gap between Band-Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Non-toxic InP-based nanocrystals have been developed for promising candidates for commercial optoelectronic applications and they still require further improvement on photophysical properties, compared to Cd-based quantum dots (QDs), for better device efficiency and long-term stability. It is, therefore, essential to understand the precise mechanism of carrier trapping even in the state-of-the-art InP-based QD with near-unity luminescence. Here, it is shown that using time-resolved spectroscopic measurements of systematically size-controlled InP/ZnSe/ZnS core/shell/shell QDs with the quantum yield close to one, carrier trapping decreases with increasing the energy difference between band-edge and trap states, indicating that the process follows the energy gap law, well known in molecular photochemistry for nonradiative internal conversion between two electronic states. Similar to the molecular view of the energy gap law, it is found that the energy gap between the band-edge and trap states is closely associated with ZnSe phonons that assist carrier trapping into defects in highly luminescent InP/ZnSe/ZnS QDs. These findings represent a striking departure from the generally accepted view of carrier trapping mechanism in QDs in the Marcus normal region, providing a step forward understanding how excitons in nanocrystals interact with traps, and offering valuable guidance for making highly efficient and stable InP-based QDs.

Highly stable fluorescent probe based on mesoporous silica coated quantum dots for sensitive and selective detection of Cd2

Cadmium ions have been of crucial concern due to the high biological toxicity and serious environmental risks. Various fluorescent Cd-sensitive probes have been reported with improved sensing properties, but still severely suffer from poor stability and insufficient selectivity. In this work, a stable fluorescent probe based on silica encapsulated quantum dots (QDs) have been developed for rapid, sensitive and selective detection of cadmium ion. To improve fluorescence stability, the strategy of mesoporous silica encapsulation was adopted, in which the mesoporous silica shell offers numerous channels for Cd²⁺. Further, the Forster Resonance Energy Transfer (FRET) system, where QDs@mSiO₂and rhodamine B (RB) are used as donors and acceptors respectively, has been constructed, in which the mesoporous silica shell also serves as spacers with tunable thickness for controlling the QD-RB distance. Under optimal conditions, the probes possess a sensitive fluorescence response with a detection limit of 1.25μM. Visual detection can be realized by the obvious fluorescence changes of the FRET system. In addition, the FRET system shows promising sensing performances both in tap water samples and rice-washed water samples, confirming a great potential for practical application.

Observing Multiexciton Correlations in Colloidal Semiconductor Quantum Dots via Multiple-Quantum Two-Dimensional Fluorescence Spectroscopy

Correlations between excitons, that is, electron-hole pairs, have a great impact on the optoelectronic properties of semiconductor quantum dots and thus are relevant for applications such as lasers and photovoltaics. Upon multiphoton excitation, these correlations lead to the formation of multiexciton states. It is challenging to observe these states spectroscopically, especially higher multiexciton states, because of their short lifetimes and nonradiative decay. Moreover, solvent contributions in experiments with coherent signal detection may complicate the analysis. Here we employ multiple-quantum two-dimensional (2D) fluorescence spectroscopy on colloidal CdSe_1-xS_x/ZnS alloyed core/shell quantum dots. We selectively map the electronic structure of multiexcitons and their correlations by using two- and three-quantum 2D spectroscopy, conducted in a simultaneous measurement. Our experiments reveal the characteristics of biexcitons and triexcitons such as transition dipole moments, binding energies, and correlated transition energy fluctuations. We determine the binding energies of the first six biexciton states by simulating the two-quantum 2D spectrum. By analyzing the line shape of the three-quantum 2D spectrum, we find strong correlations between biexciton and triexciton states. Our method contributes to a more comprehensive understanding of multiexcitonic species in quantum dots and other semiconductor nanostructures.

Nanostructured metal phosphides: from controllable synthesis to sustainable catalysis

Metal phosphides (MPs) with unique and desirable physicochemical properties provide promising potential in practical applications, such as the catalysis, gas/humidity sensor, environmental remediation, and energy storage fields, especially for transition metal phosphides (TMPs) and MPs consisting of group IIIA and IVA metal elements. Most studies, however, on the synthesis of MP nanomaterials still face intractable challenges, encompassing the need for a more thorough understanding of the growth mechanism, strategies for large-scale synthesis of targeted high-quality MPs, and practical achievement of functional applications. This review aims at providing a comprehensive update on the controllable synthetic strategies for MPs from various metal sources. Additionally, different passivation strategies for engineering the structural and electronic properties of MP nanostructures are scrutinized. Then, we showcase the implementable applications of MP-based materials in emerging sustainable catalytic fields including electrocatalysis, photocatalysis, mild thermocatalysis, and related hybrid systems. Finally, we offer a rational perspective on future opportunities and remaining challenges for the development of MPs in the materials science and sustainable catalysis fields.