Polarized Raman spectroscopy in low-symmetry 2D materials: angle-resolved experiments and complex number tensor elements

Anisotropic Te/PdSe2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection

Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously-reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W-1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation-engineered heterostructures in enhancing polarization-sensitive photodetectors and advancing optoelectronic technology.

Precise Crystal Orientation Identification and Twist-Induced Giant Modulation of Optical Anisotropy in 1T'-ReS2

The ability to precisely identify crystal orientation as well as to nondestructively modulate optical anisotropy in atomically thin rhenium dichalcogenides is critical for the future development of polarization programmable optoelectronic devices, which remains challenging. Here, we report a modified polarized optical imaging (POI) method capable of simultaneously identifying in-plane (Re chain) and out-of-plane (c-axis) crystal orientations of the monolayer to few-layer ReS2, meanwhile, propose a nondestructive approach to modulate the optical anisotropy in ReS2 via twist stacking. The results show that parallel and near-cross POI are effective to independently identify the in-plane and out-of-plane crystal orientations, respectively, while regulating the twist angle allows for giant modulation of in-plane optical anisotropy from highly intrinsic anisotropy to complete optical isotropy in the stacked ReS2 bilayer (with either the same or opposite c-axes), as well modeled by linear electromagnetic theory. Overall, this study not only develops a simple optical method for precise crystal orientation identification but also offers an efficient light polarization control strategy, which is a big step toward the practical application of anisotropic van der Waals materials in the design of nanophotonic and optoelectronic devices.

Phonon Pseudoangular Momentum in α-MoO3

In recent studies, it has been discovered that phonons can carry angular momentum, leading to a series of investigations into systems with three-fold rotation symmetry. However, for systems with two-fold screw rotational symmetry, such as α-MoO3, there has been no relevant discussion. In this paper, we investigated the pseudoangular momentum of phonons in crystals with two-fold screw rotational symmetry. Taking α-MoO3 as an example, we explain the selection rules in circularly polarized Raman experiments resulting from pseudoangular momentum conservation, providing important guidance for experiments. This study of pseudoangular momentum in α-MoO3 opens up a new degree of freedom for its potential applications, expanding into new application domains.

Deep-Ultraviolet and Helicity-Dependent Raman Spectroscopy for Carbon Nanotubes and 2D Materials

Recent progress of Raman spectroscopy on carbon nanotubes and 2D materials is reviewed as a topical review. The Raman tensor with complex values is related to the chiral 1D/2D materials without mirror symmetry for the mirror in the propagating direction of light, such as chiral carbon nanotube and black phosphorus. The phenomenon of complex Raman tensor is observed by the asymmetric polar plot of helicity-dependent Raman spectroscopy using incident circularly-polarized lights. First-principles calculations of resonant Raman spectra directly give the complex Raman tensor that explains helicity-dependent Raman spectra and laser-energy-dependent relative intensities of Raman spectra. In deep-ultraviolet (DUV) Raman spectroscopy with 266 nm laser, since the energy of the photon is large compared with the energy gap, the first-order and double resonant Raman processes occur in general k points in the Brillouin zone. First-principles calculation is necessary to understand the DUV Raman spectra and the origin of double-resonance Raman spectra. Asymmetric line shapes appear for the G band of graphene for 266 nm laser and in-plane Raman mode of WS2 for 532 nm laser, while these spectra show symmetric line shapes for other laser excitation. The interference effect on the asymmetric line shape is discussed by fitting the spectra to the Breit-Wigner-Fano line shapes.

The crystal orientation of THF clathrates in nano-confinement by in situ polarized Raman spectroscopy

Gas hydrates form at high pressure and low temperatures in marine sediments and permafrost regions of the earth. Despite forming in nanoporous structures, gas hydrates have been extensively studied only in bulk. Understanding nucleation and growth of gas hydrates in nonporous confinement can help create ways for storage and utilization as a future energy source. Herein, we introduce a new method for studying crystal orientation/tilt during tetrahydrofuran (THF) hydrate crystallization under the influence of nano-confinement using polarized Raman spectroscopy. Uniform cylindrical nanometer size pores of anodic aluminum oxide (AAO) are used as a model nano-confinement, and hydrate experiments are performed in a glass microsystem for control of the flash hydrate nucleation kinetics and analysis via in situ polarized Raman spectroscopy. The average THF hydrate crystal tilt of 56 ± 1° and 30.5 ± 0.5° were observed for the 20 nm and 40 nm diameter pores, respectively. Crystal tilt observed in 20 and 40-nanometer-size pores was proportional to the pore diameter, resulting in lower tilt relative to the axis of the confinement at larger diameter pores. The results indicate that the hydrates nucleation and growth mechanism can depend on the nanoconfinement size. A 1.6 ± 0.01 °C to 1.8 ± 0.01 °C depression in melting point compared to the bulk is predicted using the Gibbs-Thomson equation as a direct effect of nucleation in confinement on the hydrate properties.

Observing Axial Chirality of Chiral Single-Wall Carbon Nanotubes by Helicity-Dependent Raman Spectra

Helicity-dependent Raman spectra of an isolated, chiral, single-wall carbon nanotube (SWNT) are reported using circularly polarized light. A polar plot of polarized Raman intensity for the radial breathing mode (RBM), which is excited by left-handed or right-handed circularly polarized light, shows asymmetric angle dependence relative to the nanotube axis direction, which reflects the axial chirality of a SWNT. The asymmetry in the polar plot of the RBM can be analyzed by a complex Raman tensor. The complex phase of each component of the Raman tensor has a maximum at chiral angle θ = 15° of a SWNT which is between two achiral SWNTs, that is, zigzag (θ = 0°) and armchair (θ = 30°) SWNTs. Considering the interaction between the chiral SWNT and the circularly polarized light, we discuss the origin of the complex phases excited by the opposite helicity of the circularly polarized light.

Nonlinear Optical Properties from Engineered 2D Materials

Two-dimensional (2D) materials with atomic thickness, tunable light-matter interaction, and significant nonlinear susceptibility are emerging as potential candidates for new-generation optoelectronic devices. In this review, we briefly cover the recent research development of typical nonlinear optic (NLO) processes including second harmonic generation (SHG), third harmonic generation (THG), as well as two-photon photoluminescence (2PPL) of 2D materials. Nonlinear light-matter interaction in atomically thin 2D materials is important for both fundamental research and future optoelectronic devices. The NLO performance of 2D materials can be greatly modulated with methods such as carrier injection tuning, strain tuning, artificially stacking, as well as plasmonic resonant enhancement. This review will discuss various nonlinear optical processes and corresponding tuning methods and propose its potential NLO application of 2D materials.

Selective Electron-Phonon Coupling in Dimerized 1T-TaS2 Revealed by Resonance Raman Spectroscopy

The layered transition-metal dichalcogenide material 1T-TaS2 possesses successive phase transitions upon cooling, resulting in strong electron-electron correlation effects and the formation of charge density waves (CDWs). Recently, a dimerized double-layer stacking configuration was shown to form a Peierls-like instability in the electronic structure. To date, no direct evidence for this double-layer stacking configuration using optical techniques has been reported, in particular through Raman spectroscopy. Here, we employ a multiple excitation and polarized Raman spectroscopy to resolve the behavior of phonons and electron-phonon interactions in the commensurate CDW lattice phase of dimerized 1T-TaS2. We observe a distinct behavior from what is predicted for a single layer and probe a richer number of phonon modes that are compatible with the formation of double-layer units (layer dimerization). The multiple-excitation results show a selective coupling of each Raman-active phonon with specific electronic transitions hidden in the optical spectra of 1T-TaS2, suggesting that selectivity in the electron-phonon coupling must also play a role in the CDW order of 1T-TaS2.

Optical Effect Modulation in Polarized Raman Spectroscopy of Transparent Layered α-MoO3

Optical anisotropy, which is quantified by birefringence (Δn) and linear dichroism (Δk), can significantly modulate the angle-resolved polarized Raman spectroscopy (ARPRS) response of anisotropic layered materials (ALMs) by external interference. This work studies the separate modulation of birefringence on the ARPRS response and the intrinsic response by selecting transparent birefringent crystal α-MoO₃ as an excellent platform. It is found that there are several anomalous ARPRS responses in α-MoO₃ that cannot be reproduced by the real Raman tensor widely used in non-absorbing materials; however, they can be well explained by considering the birefringence-induced Raman selection rules. Moreover, the systematic thickness-dependent study indicates that birefringence modulates the ARPRS response to render an interference pattern; however, the amplitude of modulation is considerably lower than that by linear dichroism as occurred in black phosphorous. This weak modulation brings convenience to the crystal orientation determination of transparent ALMs. Combining the atomic vibrational pattern and bond polarizability model, the intrinsic ARPRS response of α-MoO₃ is analyzed, giving the physical origins of the Raman anisotropy. This study employs α-MoO₃ as an example, although it is generally applicable to all transparent birefringent ALMs.

Confocal Raman microscope with versatile dual polarization snapshot acquisition

In this paper we propose a new strategy towards simultaneous co- and cross-polarized measurements of Raman spectra in a confocal microscope. One of the advantages of this strategy is that it is immune to polarization-dependent efficiency of diffraction gratings. It is shown via linear angle-resolved and circular polarization measurements that the accuracy of these snapshot polarization measurements on solid and liquid samples are in good agreement with available models and data. The interest of simultaneous acquisition of the total Raman response and the degree of polarization is discussed as well.

Plasmon-enhanced Raman spectroscopy of two-dimensional semiconductors

Two-dimensional (2D) semiconductors have grown fast into an extraordinary research field due to their unique physical properties compared to other semiconducting materials. The class of materials proved extremely fertile for both fundamental studies and a wide range of applications from electronics/spintronics/optoelectronics to photocatalysis and CO₂reduction. 2D materials are highly confined in the out-of-plane direction and often possess very good environmental stability. Therefore, they have also become a popular material system for the manipulation of optoelectronic properties via numerous external parameters. Being a versatile characterization technique, Raman spectroscopy is used extensively to study and characterize various physical properties of 2D materials. However, weak signals and low spatial resolution hinder its application in more advanced systems where decoding local information plays an important role in advancing our understanding of these materials for nanotechnology applications. In this regard, plasmon-enhanced Raman spectroscopy has been introduced in recent time to investigate local heterogeneous information of 2D semiconductors. In this review, we summarize the recent progress of plasmon-enhanced Raman spectroscopy of 2D semiconductors. We discuss the current state-of-art and provide future perspectives on this specific branch of Raman spectroscopy applied to 2D semiconductors.