Facile and quantitative estimation of strain in nanobubbles with arbitrary symmetry in 2D semiconductors verified using hyperspectral nano-optical imaging

Visualizing and Controlling of Photogenerated Electron-Hole Pair Separation in Monolayer WS2 Nanobubbles under Piezoelectric Field

The piezoelectric properties of two-dimensional semiconductor nanobubbles present remarkable potential for application in flexible optoelectronic devices, and the piezoelectric field has emerged as an efficacious pathway for both the separation and migration of photogenerated electron-hole pairs, along with inhibition of recombination. However, the comprehension and control of photogenerated carrier dynamics within nanobubbles still remain inadequate. Hence, this study is dedicated to underscore the importance of in situ detection and detailed characterization of photogenerated electron-hole pairs in nanobubbles to enrich understanding and strategic manipulation in two-dimensional semiconductor materials. Utilizing frequency modulation kelvin probe force microscopy (FM-KPFM) and strain gradient distribution techniques, the existence of a piezoelectric field in monolayer WS2 nanobubbles was confirmed. Combining w/o and with illumination FM-KPFM, second-order capacitance gradient technique and in situ nanoscale tip-enhanced photoluminescence characterization techniques, the interrelationships among the piezoelectric effect, interlayer carrier transfer, and the funneling effect for photocarrier dynamics process across various nanobubble sizes were revealed. Notably, for a WS2/graphene bubble height of 15.45 nm, a 0 mV surface potential difference was recorded in the bubble region w/o and with illumination, indicating a mutual offset of piezoelectric effect, interlayer carrier transfer, and the funneling effect. This phenomenon is prevalent in transition metal dichalcogenides materials exhibiting inversion symmetry breaking. The implication of our study is profound for advancing the understanding of the dynamics of photogenerated electron-hole pair in nonuniform strain piezoelectric systems, and offers a reliable framework for the separation and modulation of photogenerated electron-hole pair in flexible optoelectronic devices and photocatalytic applications.

Preparation and Modeling of Graphene Bubbles to Obtain Strain-Induced Pseudomagnetic Fields

It has been both theoretically predicted and experimentally demonstrated that strain can effectively modulate the electronic states of graphene sheets through the creation of a pseudomagnetic field (PMF). Pressurizing graphene sheets into bubble-like structures has been considered a viable approach for the strain engineering of PMFs. However, the bubbling technique currently faces limitations such as long manufacturing time, low durability, and challenges in precise control over the size and shape of the pressurized bubble. Here, we propose a rapid bubbling method based on an oxygen plasma chemical reaction to achieve rapid induction of out-of-plane deflections and in-plane strains in graphene sheets. We introduce a numerical scheme capable of accurately resolving the strain field and resulting PMFs within the pressurized graphene bubbles, even in cases where the bubble shape deviates from perfect spherical symmetry. The results provide not only insights into the strain engineering of PMFs in graphene but also a platform that may facilitate the exploration of the strain-mediated electronic behaviors of a variety of other 2D materials.

Sub-Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain-Engineered WSe2 Monolayers

Strain-engineering in atomically thin metal dichalcogenides is a useful method for realizing single-photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow-linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle-strained WSe2 monolayers with sub-diffraction-limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain-engineered SPEs and constitute a key step toward realizing next-generation quantum optical architectures.

Core/Shell-Like Localized Emission at Atomically Thin Semiconductor-Au Interface

Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, we report the observation of core/shell-like localized emission from monolayer WSe2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe2-Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.

Programmable nanowrinkle-induced room-temperature exciton localization in monolayer WSe2

Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate strain-localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. At cryogenic temperatures, antibunched emission is observed, confirming that the nanocone-induced strain is sufficiently large for the formation of quantum emitters. At 300 K, detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from the fine wrinkles, and show that the states can be tightly confined to regions <10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.

Elucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force Microscopy

Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS2 via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.

Direct nano-imaging of light-matter interactions in nanoscale excitonic emitters

Strong light-matter interactions in localized nano-emitters placed near metallic mirrors have been widely reported via spectroscopic studies in the optical far-field. Here, we report a near-field nano-spectroscopic study of localized nanoscale emitters on a flat Au substrate. Using quasi 2-dimensional CdSe/Cd_xZn_1-xS nanoplatelets, we observe directional propagation on the Au substrate of surface plasmon polaritons launched from the excitons of the nanoplatelets as wave-like fringe patterns in the near-field photoluminescence maps. These fringe patterns were confirmed via extensive electromagnetic wave simulations to be standing-waves formed between the tip and the edge-up assembled nano-emitters on the substrate plane. We further report that both light confinement and in-plane emission can be engineered by tuning the surrounding dielectric environment of the nanoplatelets. Our results lead to renewed understanding of in-plane, near-field electromagnetic signal transduction from the localized nano-emitters with profound implications in nano and quantum photonics as well as resonant optoelectronics.

Tip-Enhanced Dark Exciton Nanoimaging and Local Strain Control in Monolayer WSe2

Dark excitons in transition-metal dichalcogenides, with their long lifetimes and strong binding energies, provide potential platforms from photonic and optoelectronic applications to quantum information science even at room temperature. However, their spatial heterogeneity and sensitivity to strain is not yet understood. Here, we combine tip-enhanced photoluminescence spectroscopy with atomic force induced strain control to nanoimage dark excitons in WSe₂ and their response to local strain. Dark exciton emission is facilitated by out-of-plane picocavity Purcell enhancement giving rise to spatially highly localized emission, providing for higher spatial resolution compared to bright exciton nanoimaging. Further, tip-antenna-induced dark exciton emission is enhanced in areas of higher strain associated with bubbles. In addition, active force control shows dark exciton emission to be more sensitive to strain with both compressive and tensile lattice deformation facilitating emission. This interplay between localized strain and Purcell effects provides novel pathways for nanomechanical exciton emission control.

Ultrastable tip-enhanced hyperspectral optical nanoimaging for defect analysis of large-sized WS2 layers

Optical nanoimaging techniques, such as tip-enhanced Raman spectroscopy (TERS), are nowadays indispensable for chemical and optical characterization in the entire field of nanotechnology and have been extensively used for various applications, such as visualization of nanoscale defects in two-dimensional (2D) materials. However, it is still challenging to investigate micrometer-sized sample with nanoscale spatial resolution because of severe limitation of measurement time due to drift of the experimental system. Here, we achieved long-duration TERS imaging of a micrometer-sized WS₂ sample for 6 hours in a reproducible manner. Our ultrastable TERS system enabled to reveal the defect density on the surface of tungsten disulfide layers in large area equivalent to the device scale. It also helped us to detect rare defect-related optical signals from the sample. The present study paves ways to evaluate nanoscale defects of 2D materials in large area and to unveil remarkable optical and chemical properties of large-sized nanostructured materials.

Nano-optical Visualization of Interlayer Interactions in WSe2/WS2 Heterostructures

The interplay between excitons and phonons governs the optical and electronic properties of transition metal dichalcogenides (TMDs). Even though a number of linear and nonlinear optical-, electron-, and photoelectron-based approaches have been developed and/or adopted to characterize excitons and phonons in single/few-layer TMDs and their heterostructures, no existing method is capable of directly probing ultralow-frequency and interlayer phonons on the nanoscale. To this end, we developed ultralow-frequency tip-enhanced Raman spectroscopy, which allows spectrally and spatially resolved chemical and structural nanoimaging of WSe₂/WS₂ heterostructures. In this work, we apply this method to analyze phonons in nanobubbles that are sustained in these heterobilayers. Our method is capable of directly probing interlayer (de)coupling using our novel structurally sensitive nano-optical probe and the interplay between excitons and interlayer/intralayer phonons through correlation analysis of the recorded spectral images.

Tip-Enhanced Raman Scattering Imaging of Single- to Few-Layer Ti3C2Tx MXene

MXenes are among the most widely researched materials due to a unique combination of high electronic conductivity and hydrophilic surface, confined in a 2D structure. Therefore, comprehensive characterization of individual MXene flakes is of great importance. Here we report on nanoscale Raman imaging of single-layer and few-layer flakes of Ti₃C₂T_x MXene deposited on a gold substrate using tip-enhanced Raman scattering (TERS). TERS spectra of MXene monolayers are dominated by an intense peak at around 201 cm^-1 and two well-defined peaks at around 126 and 725 cm^-1. Absolute intensities of these peaks decrease with increasing number of layers, though the relative intensity of the 126 and 725 cm^-1 bands as compared to the 201 cm^-1 band increases. The peak positions of the main MXene bands do not significantly change in flakes of different number of layers, suggesting weak coupling between the MXene layers. In addition, we observed stiffening of the 201 cm^-1 vibration over the wrinkles in MXene flakes. Using TERS for nanoscale spectroscopic characterization of Ti₃C₂T_x allows fast Raman mapping with deep subdiffraction resolution at the laser power density on the sample about an order of magnitude lower as compared to confocal Raman measurements. Finally, we demonstrate very high environmental stability of stoichiometric single-layer MXenes and show that the intensity of TERS response from the single- and few-layer flakes of Ti₃C₂T_x can be used to track early stages of degradation, well before significant morphological changes appear.

Visualization of Dark Excitons in Semiconductor Monolayers for High-Sensitivity Strain Sensing

Transition-metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In tungsten-based TMDs, spin- and momentum-forbidden transitions give rise to dark excitons that typically are optically inaccessible but represent the lowest excitonic states of the system. Dark excitons can deeply affect the transport, dynamics, and coherence of bright excitons, hampering device performance. Therefore, it is crucial to create conditions in which these excitonic states can be visualized and controlled. Here, we show that compressive strain in WS₂ enables phonon scattering of photoexcited electrons between momentum valleys, enhancing the formation of dark intervalley excitons. We show that the emission and spectral properties of momentum-forbidden excitons are accessible and strongly depend on the local strain environment that modifies the band alignment. This mechanism is further exploited for strain sensing in two-dimensional semiconductors, revealing a gauge factor exceeding 10⁴.

Tip-Enhanced Photoluminescence of Freestanding Lateral Heterobubbles

Two-dimensional (2D) semiconducting materials have promising applications in flexible optoelectronics, nanophotonics, and sensing based on the broad tunability of their optical and electronic properties. 2D nanobubbles form exciton funnels due to localized strain that can be used as local emitters for information processing. Their nanoscale optical characterization requires the use of near-field scanning probe microscopy (SPM). However, previous near-field studies of 2D materials were performed on SiO₂/Si and metallic substrates using the plasmonic gap mode to increase the signal-to-noise ratio. Another challenge is the deterministic control of bubble size and location. We addressed these challenges by investigating the photoluminescence (PL) signals of freestanding monolayer lateral WSe₂-MoSe₂ heterostructures under the influence of strain exerted by a plasmonic SPM tip. For first time, we performed tip-enhanced PL imaging of freestanding 2D materials and studied the competition between the PL enhancement mechanisms by nanoindentation as a function of the tip-sample distance. We observed the tunability of PL as a function of bubble size, which opens new possibilities to design optoelectronic nanodevices.

Exciton-Photonics: From Fundamental Science to Applications

Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed excitons. Over the past two decades, the emergence of a variety of low-dimensional semiconductors that support excitons combined with advances in nano-optics and photonics has burgeoned an advanced area of research that focuses on engineering, imaging, and modulating the coupling between excitons and photons, resulting in the formation of hybrid quasiparticles termed exciton-polaritons. This advanced area has the potential to bring about a paradigm shift in quantum optics, as well as classical optoelectronic devices. Here, we present a review on the coupling of light in excitonic semiconductors and previous investigations of the optical properties of these hybrid quasiparticles via both far-field and near-field imaging and spectroscopy techniques. Special emphasis is given to recent advances with critical evaluation of the bottlenecks that plague various materials toward practical device implementations including quantum light sources. Our review highlights a growing need for excitonic material development together with optical engineering and imaging techniques to harness the utility of excitons and their host materials for a variety of applications.

Experimental Adhesion Energy in van der Waals Crystals and Heterostructures from Atomically Thin Bubbles

The formation of gas-filled bubbles on the surface of van der Waals crystals provides an ideal platform whereby the interplay of the elastic parameters and interlayer forces can be suitably investigated. Here, we combine experimental and numerical efforts to study the morphology of the bubbles at equilibrium and highlight unexpected behaviors that contrast with the common assumptions. We exploit such observations to develop an accurate analytical model to describe the shape and strain of the bubbles and exploit it to measure the adhesion energy between a variety of van der Waals crystals, showing sizable material-dependent trends.

Interaction of gases with monolayer WS2: an in situ spectroscopy study

The optical and electronic properties of two-dimensional (2D) materials can be tuned through physical and chemical adsorption of gases. They are also ideal sensor platforms, where charge transfer from the adsorbate can induce a measurable change in the electrical resistance within a device configuration. While 2D materials-based gas sensors exhibit high sensitivity, questions exist regarding the direction of charge transfer and the role of lattice defects during sensing. Here we measured the dynamics of adsorption of NO2 and NH3 on monolayer WS2 using in situ photoluminescence (PL) and resonance Raman spectroscopy. Experiments were conducted across a temperature range of 25-250 °C and gas concentrations between 5-650 ppm. The PL emission energies blue- and red-shifted when exposed to NO2 and NH3, respectively, and the magnitude of the shift depended on the gas concentration as well as the temperature down to the lowest concentration of 5 ppm. Analysis of the adsorption kinetics revealed an exponential increase in the intensities of the trion peaks with temperature, with apparent activation energies similar to barriers for migration of sulfur vacancies in the WS2 lattice. The corresponding Resonance Raman spectra allowed the simultaneous measurement of the defect-induced LA mode. A positive correlation between the defect densities and the shifts in the PL emission energies establish lattice defects such as sulfur vacancies as the preferential sites for gas adsorption. Moreover, an increase in defect densities with temperature in the presence of NO2 and NH3 suggests that these gases may also play a role in the creation of lattice defects. Our study provides key mechanistic insights into gas adsorption on monolayer WS2, and highlights the potential for future development of spectroscopy-based gas sensors based on 2D materials.