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Biswas A, Xu R, Christiansen-Salameh J, Jeong E, Alvarez GA, Li C, Puthirath AB, Gao B, Garg A, Gray T, Kannan H, Zhang X, Elkins J, Pieshkov TS, Vajtai R, Birdwell AG, Neupane MR, Pate BB, Ivanov T, Garratt EJ, Dai P, Zhu H, Tian Z, Ajayan PM. Phase Stability of Hexagonal/Cubic Boron Nitride Nanocomposites. NANO LETTERS 2023; 23:6927-6936. [PMID: 37489836 DOI: 10.1021/acs.nanolett.3c01537] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/26/2023]
Abstract
Boron nitride (BN) is an exceptional material, and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate, and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the coexistence of two phases can lead to strong nonlinear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN possibly governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorph-based nanocomposites with desirable properties for optoelectronics and thermal energy management applications.
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Affiliation(s)
- Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Rui Xu
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Joyce Christiansen-Salameh
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Eugene Jeong
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Gustavo A Alvarez
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Chenxi Li
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Bin Gao
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Arushi Garg
- Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India
| | - Tia Gray
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Harikishan Kannan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Xiang Zhang
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Jacob Elkins
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Tymofii S Pieshkov
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - A Glen Birdwell
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, United States
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, United States
| | - Bradford B Pate
- Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Tony Ivanov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, United States
| | - Elias J Garratt
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, United States
| | - Pengcheng Dai
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Hanyu Zhu
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Zhiting Tian
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
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Moon S, Kim J, Park J, Im S, Kim J, Hwang I, Kim JK. Hexagonal Boron Nitride for Next-Generation Photonics and Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204161. [PMID: 35735090 DOI: 10.1002/adma.202204161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
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Affiliation(s)
- Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jeonghyeon Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Semi Im
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jawon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Inyong Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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Yan X, Jin Q, Jiang Y, Yao T, Li X, Tao A, Gao C, Chen C, Ma X, Ye H. Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36875-36881. [PMID: 35926161 DOI: 10.1021/acsami.2c10143] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Crystal defects play an important role in the degradation and failure of semiconductor materials and devices. Direct determination of band gap of defects is a critical step for clarifying how the defects affect the physical properties of semiconductors. Here, high-quality aluminum nitride (AlN) thin films were grown epitaxially on single-crystal Al2O3 substrates via pulsed laser deposition. The atomic structure and band gap of three types of inversion domain boundaries (IDBs) in AlN were determined using aberration-corrected transmission electron microscopy and atomic-resolution valence electron energy-loss spectroscopy. It was found that the band gap of all of the IDBs reduces evidently compared to that of the bulk AlN. The maximum band gap reduction of the IDBs is 1.0 eV. First-principles calculations revealed that the band gap reduction of the IDBs is mainly due to the rise of pz orbital at the valence band maximum, which originates from the elongated Al-N bonds along the [0001] direction at the IDBs. The successful band gap determination of defects paves an avenue for quantitatively evaluating the effect of defects on the performance of semiconductor materials and devices.
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Affiliation(s)
- Xuexi Yan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Jihua Lab, Foshan 528251, China
| | - Qianqian Jin
- School of Microelectronics and Materials Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
| | - Yixiao Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Jihua Lab, Foshan 528251, China
| | - Tingting Yao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Jihua Lab, Foshan 528251, China
| | - Xiang Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Jihua Lab, Foshan 528251, China
| | - Ang Tao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Jihua Lab, Foshan 528251, China
| | - Chunyang Gao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Jihua Lab, Foshan 528251, China
| | - Chunlin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Jihua Lab, Foshan 528251, China
| | - Xiuliang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- State Key Lab of Advanced Processing and Recycling on Non-Ferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China
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Fan S, Li X, Fan R, Lu Y. Size-dependent fracture behavior of GaN pillars under room temperature compression. NANOSCALE 2020; 12:23241-23247. [PMID: 33206089 DOI: 10.1039/d0nr05400c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Gallium nitride (GaN) offers high electron mobility, breakdown voltage and saturation velocity, and is an ideal candidate for advanced electronic and power devices. Meanwhile, it can also be used for microelectromechanical systems (MEMS) and micro/nano-mechanical devices. These applications fundamentally rely on its mechanical properties and structural reliability, in particular at the micro/nanoscale. In this paper, single crystalline [0001]-oriented GaN pillars with diameters ranging from ∼200 nm to ∼1.5 μm were microfabricated and systematically characterized by in situ compression tests inside a SEM/TEM at room temperature. It showed that a crack would nucleate at the top of the pillars with diameters >800 nm and propagate axially during compression. However, pillars with diameters less than 700 nm would deform plastically without splitting, with maximum stress up to 10 GPa. The corresponding yield/fracture strengths show a strong size effect, which increases from ∼4 GPa to ∼11 GPa with the diameter decreasing from ∼1.5 μm to ∼400 nm. In situ TEM compression tests suggest that the formation of slip bands on the (01[combining macron]11) plane dominates the plastic deformation of the pillars with diameters of ∼200-700 nm, while both crack splitting and slip bands were observed in the pillars with diameters around 700 to 800 nm during the brittle-to-ductile transition. This work provides critical insights for developing robust GaN-based MEMS and power electronic applications.
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Affiliation(s)
- Sufeng Fan
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong.
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