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Kumar D, Sharma R, Wang F, Liu Y, Zhao S, Yang H. Quantum Rectification Based on Room Temperature Multidirectional Nonlinearity in Bi 2Te 3. NANO LETTERS 2024. [PMID: 39329367 DOI: 10.1021/acs.nanolett.4c03517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
Recent interest in quantum nonlinearity has spurred the development of rectifiers for harvesting energy from ambient radiofrequency waves. However, these rectifiers face efficiency and bandwidth limitations at room temperature. We address these challenges by exploring Bi2Te3, a time-reversal symmetric topological quantum material. Bi2Te3 exhibits robust room temperature second-order voltage generation in both the longitudinal and transverse directions. We harness these coexisting nonlinearities to design a multidirectional quantum rectifier that can simultaneously extract energy from various components of an input signal. We demonstrate the efficacy of Bi2Te3-based rectifiers across a broad frequency range, spanning from existing Wi-Fi bands (2.45 GHz) to frequencies relevant to next-generation 5G technology (27.4 GHz). Our Bi2Te3-based rectifier surpasses previous limitations by achieving a high rectification efficiency and operational frequency, alongside a low operational threshold and broadband functionality. These findings enable practical topological quantum rectifiers for high-frequency electronics and energy conversion, advancing wireless energy harvesting for next-generation communication.
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Affiliation(s)
- Dushyant Kumar
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
- Department of Physics, Netaji Subhas University of Technology, New Delhi 110078, India
| | - Raghav Sharma
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
- Department of Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar 140001, India
| | - Fei Wang
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Yakun Liu
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Shishun Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
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2
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Naseer A, Priydarshi A, Ghosh P, Ahammed R, Chauhan YS, Bhowmick S, Agarwal A. Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III-V monolayers. NANOSCALE 2024; 16:12107-12117. [PMID: 38829164 DOI: 10.1039/d4nr00336e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC m-1, outperforming most known 2D ferroelectrics. We demonstrate an electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between the Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.
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Affiliation(s)
- Ateeb Naseer
- Department of Electrical Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India
| | - Achintya Priydarshi
- Department of Electrical Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India
| | - Pritam Ghosh
- Department of Materials Science & Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
| | - Raihan Ahammed
- Department of Physics, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
| | - Yogesh Singh Chauhan
- Department of Electrical Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India
| | - Somnath Bhowmick
- Department of Materials Science & Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
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3
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Staszek K, Calavalle F, Fert A, Gobbi M, Casanova F, Hueso LE. Microscale Chiral Rectennas for Energy Harvesting. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400729. [PMID: 38597368 DOI: 10.1002/adma.202400729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/04/2024] [Indexed: 04/11/2024]
Abstract
Wireless radiofrequency rectifiers have the potential to power the billions of "Internet of Things" (IoT) devices currently in use by effectively harnessing ambient electromagnetic radiation. However, the current technology relies on the implementation of rectifiers based on Schottky diodes, which exhibit limited capabilities for high-frequency and low-power applications. Consequently, they require an antenna to capture the incoming signal and amplify the input power, thereby limiting the possibility of miniaturizing devices to the millimeter scale. Here, the authors report wireless rectification at the GHz range in a microscale device built on single chiral tellurium with extremely low input powers. By studying the crystal symmetry and the temperature dependence of the rectification, the authors demonstrate that its origin is the intrinsic nonlinear conductivity of the material. Additionally, the unprecedented ability to modulate the rectification output by an electrostatic gate is shown. These results open the path to developing tuneable microscale wireless rectifiers with a single material.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Witold Skowroński
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | - Kamil Staszek
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | | | - Albert Fert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Basque Country, 20018, Spain
- Department of Advanced Polymers and Materials: Physics, Chemistry and Technology, Univesity of the Basque Country (UPV/EHU), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU) and Materials Physics Center (MPC), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
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4
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Zhong J, Zhang S, Duan J, Peng H, Feng Q, Hu Y, Wang Q, Mao J, Liu J, Yao Y. Effective Manipulation of a Colossal Second-Order Transverse Response in an Electric-Field-Tunable Graphene Moiré System. NANO LETTERS 2024; 24:5791-5798. [PMID: 38695400 DOI: 10.1021/acs.nanolett.4c00933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The second-order nonlinear transport illuminates a frequency-doubling response emerging in quantum materials with a broken inversion symmetry. The two principal driving mechanisms, the Berry curvature dipole and the skew scattering, reflect various information including ground-state symmetries, band dispersions, and topology of electronic wave functions. However, effective manipulation of them in a single system has been lacking, hindering the pursuit of strong responses. Here, we report on the effective manipulation of the two mechanisms in a single graphene moiré superlattice, AB-BA stacked twisted double bilayer graphene. Most saliently, by virtue of the high tunability of moiré band structures and scattering rates, a record-high second-order transverse conductivity ∼ 510 μm S V-1 is observed, which is orders of magnitude higher than any reported values in the literature. Our findings establish the potential of electrically tunable graphene moiré systems for nonlinear transport manipulations and applications.
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Affiliation(s)
- Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yuqing Hu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qinsheng Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
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5
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Lee JE, Wang A, Chen S, Kwon M, Hwang J, Cho M, Son KH, Han DS, Choi JW, Kim YD, Mo SK, Petrovic C, Hwang C, Park SY, Jang C, Ryu H. Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe 4. Nat Commun 2024; 15:3971. [PMID: 38729931 PMCID: PMC11087648 DOI: 10.1038/s41467-024-47643-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 04/08/2024] [Indexed: 05/12/2024] Open
Abstract
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
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Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics, Pusan National University, Busan, 46241, South Korea
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Aifeng Wang
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, 400044, China
| | - Shuzhang Chen
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
| | - Minseong Kwon
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Jinwoong Hwang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, 24341, South Korea
| | - Minhyun Cho
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Ki-Hoon Son
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Dong-Soo Han
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Cedomir Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
- Shanghai Advanced Research in Physical Sciences, Shanghai, 201203, China
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea.
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, South Korea.
- Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, South Korea.
| | - Chaun Jang
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
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6
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Si W, Zhou W, Liu X, Wang K, Liao Y, Yan F, Ji X. Recent Advances in Broadband Photodetectors from Infrared to Terahertz. MICROMACHINES 2024; 15:427. [PMID: 38675239 PMCID: PMC11051910 DOI: 10.3390/mi15040427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 04/28/2024]
Abstract
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.
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Affiliation(s)
- Wei Si
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Wenbin Zhou
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiangze Liu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Ke Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Yiming Liao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Feng Yan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoli Ji
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
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7
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Lihm JM, Park CH. Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons. PHYSICAL REVIEW LETTERS 2024; 132:106402. [PMID: 38518315 DOI: 10.1103/physrevlett.132.106402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/07/2023] [Accepted: 01/09/2024] [Indexed: 03/24/2024]
Abstract
The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of n-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.
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Affiliation(s)
- Jae-Mo Lihm
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
| | - Cheol-Hwan Park
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
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8
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Connelly BC, Taylor PJ, de Coster GJ. Emergence of threefold symmetric helical photocurrents in epitaxial low twinned Bi 2Se 3. Proc Natl Acad Sci U S A 2024; 121:e2307425121. [PMID: 38271339 PMCID: PMC10835140 DOI: 10.1073/pnas.2307425121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Accepted: 11/29/2023] [Indexed: 01/27/2024] Open
Abstract
We present evidence of a strong circular photon drag effect (PDE) in topological insulators (TIs) through the observation of helicity-dependent topological photocurrents with threefold rotational symmetry using THz spectroscopy in epitaxially-grown Bi2Se3 with reduced crystallographic twinning. We establish how twinned domains introduce competing nonlinear optical (NLO) responses inherent to the crystal structure that obscure geometry-sensitive optical processes through the introduction of a spurious mirror symmetry. Minimizing the twinning defect reveals strong NLO response currents whose magnitude and direction depend on the alignment of the excitation to the crystal axes and follow the threefold rotational symmetry of the crystal. Notably, photocurrents arising from helical light reverse direction for left/right circular polarizations and maintain a strong azimuthal dependence-a result uniquely attributable to the circular PDE, where the photon momentum acts as an applied in-plane field stationary in the laboratory frame. Our results demonstrate new levels of control over the magnitude and direction of photocurrents in TIs and that the study of single-domain films is crucial to reveal hidden phenomena that couple topological order and crystal symmetries.
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Affiliation(s)
- Blair C. Connelly
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
| | - Patrick J. Taylor
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
| | - George J. de Coster
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
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9
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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10
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Shayeganfar F, Ramazani A, Habibiyan H, Rafiee Diznab M. Terahertz linear/non-linear anomalous Hall conductivity of moiré TMD hetero-nanoribbons as topological valleytronics materials. Sci Rep 2024; 14:1581. [PMID: 38238394 PMCID: PMC10796390 DOI: 10.1038/s41598-024-51721-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 01/09/2024] [Indexed: 01/22/2024] Open
Abstract
Twisted moiré van der Waals heterostructures hold promise to provide a robust quantum simulation platform for strongly correlated materials and realize elusive states of matter such as topological states in the laboratory. We demonstrated that the moiré bands of twisted transition metal dichalcogenide (TMD) hetero-nanoribbons exhibit non-trivial topological order due to the tendency of valence and conduction band states in K valleys to form giant band gaps when spin-orbit coupling (SOC) is taken into account. Among the features of twisted WS[Formula: see text]/MoS[Formula: see text] and WSe[Formula: see text]/MoSe[Formula: see text], we found that the heavy fermions associated with the topological flat bands and the presence of strongly correlated states, enhance anomalous Hall conductivity (AHC) away from the magic angle. By band analysis, we showed that the topmost conduction bands from the ± K-valleys are perfectly flat and carry a spin/valley Chern number. Moreover, we showed that the non-linear anomalous Hall effect in moiré TMD hetero-nanoribbons can be used to manipulate terahertz (THz) radiation. Our findings establish twisted heterostructures of group-VI TMD nanoribbons as a tunable platform for engineering topological valley quantum phases and THz non-linear Hall conductivity.
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Affiliation(s)
- Farzaneh Shayeganfar
- Department of Physics and Energy Engineering, Amirkabir University of Technology, Tehran, Iran.
| | - Ali Ramazani
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Hamidreza Habibiyan
- Department of Physics and Energy Engineering, Amirkabir University of Technology, Tehran, Iran
| | - Mohammad Rafiee Diznab
- Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia, B3H 4R2, Canada
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11
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Kaplan D, Holder T, Yan B. Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry. PHYSICAL REVIEW LETTERS 2024; 132:026301. [PMID: 38277599 DOI: 10.1103/physrevlett.132.026301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 07/09/2023] [Accepted: 11/16/2023] [Indexed: 01/28/2024]
Abstract
The quantum geometry has significant consequences in determining transport and optical properties in quantum materials. Here, we use a semiclassical formalism coupled with perturbative corrections unifying the nonlinear anomalous Hall effect and nonreciprocal magnetoresistance (longitudinal resistance) from the quantum geometry. In the dc limit, both transverse and longitudinal nonlinear conductivities include a term due to the normalized quantum metric dipole. The quantum metric contribution is intrinsic and does not scale with the quasiparticle lifetime. We demonstrate the coexistence of a nonlinear anomalous Hall effect and nonreciprocal magnetoresistance in films of the doped antiferromagnetic topological insulator MnBi_{2}Te_{4}. Our work indicates that both longitudinal and transverse nonlinear transport provide a sensitive probe of the quantum geometry in solids.
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Affiliation(s)
- Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Tel Aviv, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
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12
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Shi J, Xu H, Heide C, HuangFu C, Xia C, de Quesada F, Shen H, Zhang T, Yu L, Johnson A, Liu F, Shi E, Jiao L, Heinz T, Ghimire S, Li J, Kong J, Guo Y, Lindenberg AM. Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor. Nat Commun 2023; 14:4953. [PMID: 37587120 PMCID: PMC10432555 DOI: 10.1038/s41467-023-40373-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Accepted: 07/24/2023] [Indexed: 08/18/2023] Open
Abstract
Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have attracted considerable interest. Here, we report giant room-temperature nonlinearities in non-centrosymmetric two-dimensional topological materials-the Janus transition metal dichalcogenides in the 1 T' phase, synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently show orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities in 1 T' MoSSe (e.g., > 50 times higher than 2H MoS2 for 18th order harmonic generation; > 20 times higher than 2H MoS2 for terahertz emission). We link this giant nonlinear optical response to topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and heralds the applications of topological materials in optoelectronics down to the monolayer limit.
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Affiliation(s)
- Jiaojian Shi
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Haowei Xu
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Christian Heide
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Changan HuangFu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, 100084, Beijing, China
| | - Chenyi Xia
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Felipe de Quesada
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Hongzhi Shen
- School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Leo Yu
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA
| | - Amalya Johnson
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Fang Liu
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Chemistry, Stanford University, Stanford, CA, 94305, USA
| | - Enzheng Shi
- School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, 100084, Beijing, China
| | - Tony Heinz
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA
| | - Shambhu Ghimire
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Ju Li
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yunfan Guo
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310058, Hangzhou, China.
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA.
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
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13
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Huang M, Wu Z, Zhang X, Feng X, Zhou Z, Wang S, Chen Y, Cheng C, Sun K, Meng ZY, Wang N. Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2023; 131:066301. [PMID: 37625039 DOI: 10.1103/physrevlett.131.066301] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 04/14/2023] [Accepted: 06/26/2023] [Indexed: 08/27/2023]
Abstract
Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.
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Affiliation(s)
- Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zefei Wu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Xu Zhang
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Xuemeng Feng
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zishu Zhou
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Shi Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yong Chen
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Kai Sun
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Zi Yang Meng
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
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14
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Lesne E, Saǧlam YG, Battilomo R, Mercaldo MT, van Thiel TC, Filippozzi U, Noce C, Cuoco M, Steele GA, Ortix C, Caviglia AD. Designing spin and orbital sources of Berry curvature at oxide interfaces. NATURE MATERIALS 2023; 22:576-582. [PMID: 36928382 PMCID: PMC10156604 DOI: 10.1038/s41563-023-01498-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Accepted: 01/31/2023] [Indexed: 05/05/2023]
Abstract
Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as the Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all the materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here we report the discovery of the first material system having both spin- and orbital-sourced BC: LaAlO3/SrTiO3 interfaces grown along the [111] direction. We independently detect these two sources and probe the BC associated to the spin quantum number through the measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.
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Affiliation(s)
- Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands.
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| | - Yildiz G Saǧlam
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Raffaele Battilomo
- Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena, Utrecht University, Utrecht, the Netherlands
| | | | - Thierry C van Thiel
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Ulderico Filippozzi
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Canio Noce
- Dipartimento di Fisica 'E. R. Caianiello', Universitá di Salerno, Fisciano, Italy
| | - Mario Cuoco
- CNR-SPIN c/o Universita' di Salerno, Fisciano, Italy
| | - Gary A Steele
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Carmine Ortix
- Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena, Utrecht University, Utrecht, the Netherlands.
- Dipartimento di Fisica 'E. R. Caianiello', Universitá di Salerno, Fisciano, Italy.
| | - Andrea D Caviglia
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
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15
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Hu Z, Zhang L, Chakraborty A, D'Olimpio G, Fujii J, Ge A, Zhou Y, Liu C, Agarwal A, Vobornik I, Farias D, Kuo CN, Lue CS, Politano A, Wang SW, Hu W, Chen X, Lu W, Wang L. Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209557. [PMID: 36633006 DOI: 10.1002/adma.202209557] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The zero-magnetic-field nonlinear Hall effect (NLHE) refers to the second-order transverse current induced by an applied alternating electric field; it indicates the topological properties of inversion-symmetry-breaking crystals. Despite several studies on the NLHE induced by the Berry-curvature dipole in Weyl semimetals, the direct current conversion by rectification is limited to very low driving frequencies and cryogenic temperatures. The nonlinear photoresponse generated by the NLHE at room temperature can be useful for numerous applications in communication, sensing, and photodetection across a high bandwidth. In this study, observations of the second-order NLHE in type-II Dirac semimetal CoTe2 under time-reversal symmetry are reported. This is determined by the disorder-induced extrinsic contribution on the broken-inversion-symmetry surface and room-temperature terahertz rectification without the need for semiconductor junctions or bias voltage. It is shown that remarkable photoresponsivity over 0.1 A W-1 , a response time of approximately 710 ns, and a mean noise equivalent power of 1 pW Hz-1/2 can be achieved at room temperature. The results open a new pathway for low-energy photon harvesting via nonlinear rectification induced by the NLHE in strongly spin-orbit-coupled and inversion-symmetry-breaking systems, promising a considerable impact in the field of infrared/terahertz photonics.
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Affiliation(s)
- Zhen Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Libo Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Atasi Chakraborty
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Gianluca D'Olimpio
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Jun Fujii
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Yuanchen Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Ivana Vobornik
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Daniel Farias
- Departamento de Física de la Materia Condensada and Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049, Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Chia-Nung Kuo
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Chin Shan Lue
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Antonio Politano
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Shao-Wei Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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16
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Yar A, Sultana R. Nonlinear Hall effect in monolayer phosphorene with broken inversion symmetry. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:165701. [PMID: 36825779 DOI: 10.1088/1361-648x/acbc02] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Nonlinear Hall effect (NLHE), a new member of the family of Hall effects, in monolayer phosphorene is investigated. We find that phosphorene exhibits pronounced NLHE, arising from the dipole moment of the Berry curvature induced by the proximity effect that breaks the inversion symmetry of the system. Remarkably, the nonlinear Hall response exhibits central minimum with a width on the order of the band gap, followed by two resonance-like peaks. Interestingly, each resonance peak of the Hall response shifts in the negative region of the chemical potential which is consistent with the shift of valence and conduction bands in the energy spectrum of monolayer phosphorene. It is observed that the two peaks are asymmetric, originated from anisotropy in the band structure of phosphorene. It is shown that the NLHE is very sensitive to the band gap and temperature of the system. Moreover, we find that a phase transition occurs in the nonlinear Hall response and nonlinear spin Hall conductivity of the system under the influence of spin-orbit interaction, tuned by the strength of interaction and band gap induced in the energy spectrum of monolayer phosphorene with broken inversion symmetry.
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Affiliation(s)
- Abdullah Yar
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
| | - Rifat Sultana
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
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17
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Rappoport TG, Morgado TA, Lannebère S, Silveirinha MG. Engineering Transistorlike Optical Gain in Two-Dimensional Materials with Berry Curvature Dipoles. PHYSICAL REVIEW LETTERS 2023; 130:076901. [PMID: 36867823 DOI: 10.1103/physrevlett.130.076901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Accepted: 12/18/2022] [Indexed: 06/18/2023]
Abstract
Transistors are key elements of electronic circuits as they enable, for example, the isolation or amplification of voltage signals. While conventional transistors are point-type (lumped-element) devices, it may be interesting to realize a distributed transistor-type optical response in a bulk material. Here, we show that low-symmetry two-dimensional metallic systems may be the ideal solution to implement such a distributed-transistor response. To this end, we use the semiclassical Boltzmann equation approach to characterize the optical conductivity of a two-dimensional material under a static electric bias. Similar to the nonlinear Hall effect, the linear electro-optic (EO) response depends on the Berry curvature dipole and can lead to nonreciprocal optical interactions. Most interestingly, our analysis uncovers a novel non-Hermitian linear EO effect that can lead to optical gain and to a distributed transistor response. We study a possible realization based on strained bilayer graphene. Our analysis reveals that the optical gain for incident light transmitted through the biased system depends on the light polarization, and can be quite large, especially for multilayer configurations.
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Affiliation(s)
- Tatiana G Rappoport
- University of Lisbon and Instituto de Telecomunicações, Avenida Rovisco Pais 1, Lisboa, 1049-001 Portugal
- Instituto de Física, Universidade Federal do Rio de Janeiro, C.P. 68528, 21941-972 Rio de Janeiro RJ, Brazil
| | - Tiago A Morgado
- Instituto de Telecomunicações and Department of Electrical Engineering, University of Coimbra, 3030-290 Coimbra, Portugal
| | - Sylvain Lannebère
- Instituto de Telecomunicações and Department of Electrical Engineering, University of Coimbra, 3030-290 Coimbra, Portugal
| | - Mário G Silveirinha
- University of Lisbon and Instituto de Telecomunicações, Avenida Rovisco Pais 1, Lisboa, 1049-001 Portugal
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18
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Yue Z, Li J, Li J, Zheng C, Liu J, Zou D, Xu H, Yang F, Li H, Wu L, Zhang Y, Zhang Y, Yao J. All-dielectric terahertz metasurfaces with dual-functional polarization manipulation for orthogonal polarization states. NANOSCALE 2023; 15:2739-2746. [PMID: 36655736 DOI: 10.1039/d2nr06550a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
All-dielectric metasurfaces have led to a surge of activities in the field of polarization converters due to their extremely significant potential in the manipulation of terahertz waves. Herein, a versatile all-dielectric metasurface platform that can realize dual-functional polarization manipulation for the orthogonal states of polarization in the terahertz frequency range is proposed. Furthermore, such metasurface platform exhibits the properties of a full-waveplate for one circularly polarized light, and a quarter-waveplate for the orthogonal circularly polarized light. For experimental demonstrations of strategy verification, several representative metasurfaces consisting of subwavelength-scaled all-silicon elliptical cylinders were designed, fabricated, and characterized to demonstrate the capability of dual-functional polarization manipulation, including bifunctional waveplate, near-field imaging, and focusing. The metasurface platform demonstrated here may provide an alternative perspective for the development of compact, versatile polarization terahertz devices, and the design concept can be extended to other frequency ranges as well.
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Affiliation(s)
- Zhen Yue
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Jitao Li
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Jie Li
- Information Materials and Device Applications Key Laboratory of Sichuan Provincial, Universities Chengdu University of Information Technology, Chengdu 610225, China
| | - Chenglong Zheng
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Jingyu Liu
- Beijing Key Laboratory for Metamaterials and Devices, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Technology, Department of Physics, Capital Normal University, Beijing 100048, China.
| | - Die Zou
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Hang Xu
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Fan Yang
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Hui Li
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Liang Wu
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Yating Zhang
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
| | - Yan Zhang
- Beijing Key Laboratory for Metamaterials and Devices, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Technology, Department of Physics, Capital Normal University, Beijing 100048, China.
| | - Jianquan Yao
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
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19
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Min L, Tan H, Xie Z, Miao L, Zhang R, Lee SH, Gopalan V, Liu CX, Alem N, Yan B, Mao Z. Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material. Nat Commun 2023; 14:364. [PMID: 36690617 PMCID: PMC9871029 DOI: 10.1038/s41467-023-35989-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 01/10/2023] [Indexed: 01/24/2023] Open
Abstract
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.
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Affiliation(s)
- Lujin Min
- Department of Physics, Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Hengxin Tan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhijian Xie
- Department of Electrical and Computer Engineering, North Carolina Agriculture &Technical State University, Greensboro, NC, USA
| | - Leixin Miao
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Ruoxi Zhang
- Department of Physics, Pennsylvania State University, University Park, PA, USA
| | - Seng Huat Lee
- Department of Physics, Pennsylvania State University, University Park, PA, USA
- 2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA, USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Chao-Xing Liu
- Department of Physics, Pennsylvania State University, University Park, PA, USA
| | - Nasim Alem
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
| | - Zhiqiang Mao
- Department of Physics, Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA.
- 2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA, USA.
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20
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Guo C, Chen Z, Yu X, Zhang L, Wang X, Chen X, Wang L. Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBi 2Te 4. NANO LETTERS 2022; 22:7492-7498. [PMID: 36094834 DOI: 10.1021/acs.nanolett.2c02434] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Terahertz photodetectors based on emergent intrinsic magnetic topological insulators promise excellent performance in terms of highly sensitive, anisotropic and room-temperature ability benefiting from their extraordinary material properties. Here, we propose and conceive the response features of exfoliated MnBi2Te4 flakes as active materials for terahertz detectors. The MnBi2Te4-based photodetectors show the sensitivity rival with commercially available ones, and the noise equivalent power of 13 pW/Hz0.5 under 0.275 THz at room-temperature led by the nonlinear Hall effect, allowing for the high-resolution terahertz imaging. In addition, a large anisotropy of polarization-dependent terahertz response is observed when the MnBi2Te4 device is tuned into different directions. More interestingly, we discover an unprecedented power-controlled reversal of terahertz response in the MnBi2Te4-graphene device. Our results provide feasibility of manipulating and exploiting the nontrivial topological phenomena of MnBi2Te4 under a high-frequency electromagnetic field, representing the first step toward device implementation of intrinsic magnetic topological insulators.
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Affiliation(s)
- Cheng Guo
- Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China
| | - Zhiqingzi Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
| | - Xianbin Yu
- Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Libo Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Xueyan Wang
- Department of Physics, Shanghai Normal University, 100 Guilin Rd, Shanghai 200234, China
| | - Xiaoshuang Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Lin Wang
- Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
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