Selective etching of metallic single-wall carbon nanotubes with hydrogen plasma

Synthesis, Sorting, and Applications of Single-Chirality Single-Walled Carbon Nanotubes

The synthesis of high-quality chirality-pure single-walled carbon nanotubes (SWCNTs) is vital for their applications. It is of high importance to modernize the synthesis processes to decrease the synthesis temperature and improve the quality and yield of SWCNTs. This review is dedicated to the chirality-selective synthesis, sorting of SWCNTs, and applications of chirality-pure SWCNTs. The review begins with a description of growth mechanisms of carbon nanotubes. Then, we discuss the synthesis methods of semiconducting and metallic conductivity-type and single-chirality SWCNTs, such as the epitaxial growth method of SWCNT ("cloning") using nanocarbon seeds, the growth method using nanocarbon segments obtained by organic synthesis, and the catalyst-mediated chemical vapor deposition synthesis. Then, we discuss the separation methods of SWCNTs by conductivity type, such as electrophoresis (dielectrophoresis), density gradient ultracentrifugation (DGC), low-speed DGC, ultrahigh DGC, chromatography, two-phase separation, selective solubilization, and selective reaction methods and techniques for single-chirality separation of SWCNTs, including density gradient centrifugation, two-phase separation, and chromatography methods. Finally, the applications of separated SWCNTs, such as field-effect transistors (FETs), sensors, light emitters and photodetectors, transparent electrodes, photovoltaics (solar cells), batteries, bioimaging, and other applications, are presented.

Recent Advances in Structure Separation of Single-Wall Carbon Nanotubes and Their Application in Optics, Electronics, and Optoelectronics

Structural control of single-wall carbon nanotubes (SWCNTs) with uniform properties is critical not only for their property modulation and functional design but also for applications in electronics, optics, and optoelectronics. To achieve this goal, various separation techniques have been developed in the past 20 years through which separation of high-purity semiconducting/metallic SWCNTs, single-chirality species, and even their enantiomers have been achieved. This progress has promoted the property modulation of SWCNTs and the development of SWCNT-based optoelectronic devices. Here, the recent advances in the structure separation of SWCNTs are reviewed, from metallic/semiconducting SWCNTs, to single-chirality species, and to enantiomers by several typical separation techniques and the application of the corresponding sorted SWCNTs. Based on the separation procedure, efficiency, and scalability, as well as, the separable SWCNT species, purity, and quantity, the advantages and disadvantages of various separation techniques are compared. Combined with the requirements of SWCNT application, the challenges, prospects, and development direction of structure separation are further discussed.

Chirality Pure Carbon Nanotubes: Growth, Sorting, and Characterization

Single-walled carbon nanotubes (SWCNTs) have been attracting tremendous attention owing to their structure (chirality) dependent outstanding properties, which endow them with great potential in a wide range of applications. The preparation of chirality-pure SWCNTs is not only a great scientific challenge but also a crucial requirement for many high-end applications. As such, research activities in this area over the last two decades have been very extensive. In this review, we summarize recent achievements and accumulated knowledge thus far and discuss future developments and remaining challenges from three aspects: controlled growth, postsynthesis sorting, and characterization techniques. In the growth part, we focus on the mechanism of chirality-controlled growth and catalyst design. In the sorting part, we organize and analyze existing literature based on sorting targets rather than methods. Since chirality assignment and quantification is essential in the study of selective preparation, we also include in the last part a comprehensive description and discussion of characterization techniques for SWCNTs. It is our view that even though progress made in this area is impressive, more efforts are still needed to develop both methodologies for preparing ultrapure (e.g., >99.99%) SWCNTs in large quantity and nondestructive fast characterization techniques with high spatial resolution for various nanotube samples.

Recent progress on the structure separation of single-wall carbon nanotubes

The mass production of single-structure, single-wall carbon nanotubes (SWCNTs) with identical properties is critical for their basic research and technical applications in the fields of electronics, optics and optoelectronics. Great efforts have been made to control the structures of SWCNTs since their discovery. Recently, the structure separation of SWCNTs has been making great progress. Various solution-sorting methods have been developed to achieve not only the separation of metallic and semiconducting species, but also the sorting of distinct (n, m) single-chirality species and even their enantiomers. This progress would dramatically accelerate the application of SWCNTs in the next-generation electronic devices. Here, we review the recent progress in the structure sorting of SWCNTs and outline the challenges and prospects of the structure separation of SWCNTs.

Plasmon-Induced Selective Oxidation Reaction at Single-Walled Carbon Nanotubes

Local surface plasmon resonance (LSPR)-induced oxidation of semiconducting and metallic single-walled nanotubes (SWNTs) on the nanometer scale was investigated using surface-enhanced Raman scattering (SERS) measurements. An isolated SWNT was supported on a well-defined Au nanodimer structure that possesses an LSPR field at the nanogap under light irradiation, and highly intense SERS spectra of the SWNT at the gap region were measured. SERS analysis under O₂-saturated solutions and the addition of reactive oxygen species inhibitors demonstrated that condensed singlet oxygen (¹O₂), which is one of the reactive oxygen species, was efficiently generated from a semiconducting SWNT at the nanogap by the LSPR field and led to the local oxidation of the tube. In contrast to the semiconducting SWNT, no defect formation was observed in a metallic SWNT, probably because of rapid quenching of the photoexcited state. This selective local defect formation by LSPR-induced oxidation of a semiconducting SWNT would provide novel nanoprocessing and nanofunctionalization methods for the fabrication of future SWNT-based nanodevices.

How the alignment of adsorbed ortho H pairs determines the onset of selective carbon nanotube etching

Unlocking the enormous technological potential of carbon nanotubes strongly depends on our ability to specifically produce metallic or semiconducting tubes. While selective etching of both has already been demonstrated, the underlying reasons, however, remain elusive as yet. We here present computational and experimental evidence on the operative mechanisms at the atomic scale. We demonstrate that during the adsorption of H atoms and their coalescence, the adsorbed ortho hydrogen pairs on single-walled carbon nanotubes induce higher shear stresses than axial stresses, leading to the elongation of HC-CH bonds as a function of their alignment with the tube chirality vector, which we denote as the γ-angle. As a result, the C-C cleavage occurs more rapidly in nanotubes containing ortho H-pairs with a small γ-angle. This phenomenon can explain the selective etching of small-diameter semiconductor nanotubes with a similar curvature. Both theoretical and experimental results strongly indicate the important role of the γ-angle in the selective etching mechanisms of carbon nanotubes, in addition to the nanotube curvature and metallicity effects and lead us to clearly understand the onset of selective synthesis/removal of CNT-based materials.

High density oxidative plasma unzipping of multiwall carbon nanotubes

Oxidative plasma-assisted unzipping of multiwall carbon nanotubes (MWCNTs) to transform them into petal like nano ribbons, releasing excessive strain with various plasma exposure times.

Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes

Exciting electrical properties of single-walled carbon nanotubes show promise as a future class of electronic materials, yet the manufacturing challenges remain significant. The key challenges are to determine fabrication approaches for complex and flexible arrangements of nanotube devices that are reliable, rapid, and reproducible. Realizing regular array structures is an important step toward this goal. Considerable efforts have and are being made in this vein, although the progress to date is somewhat modest. However, there are reasons to be optimistic. Positive steps of being able to control not only the spatial location and diameter of the tubes but also their electronic type (chiral control) are being made. Two primary approaches are being exploited to address the challenges. Tube deposition techniques, on the one hand, and direct growth of the desired tube at the target location are being explored. While this review covers both approaches, the emphasis is on recent developments in the direct fabrication of type-selected horizontally aligned single-walled carbon nanotubes by chemical vapor deposition.

Preparation of metallic single-wall carbon nanotubes by selective etching

We report the bulk synthesis of a sample with a high concentration of metallic single-wall carbon nanotubes (m-SWCNTs) using a modified floating catalyst chemical vapor deposition method with methane as the carbon precursor. By tuning experimental parameters, such as species and flux of carrier gases, catalyst concentration, growth temperature, etc., small-diameter semiconducting SWCNTs (s-SWCNTs) and large-diameter m-SWCNTs were obtained. Using identical growth conditions, at a temperature of 1000 °C, it was found that the addition of hydrogen as an etchant gas resulted in the preferential removal of the smaller diameter s-SWCNTs. As a result, a sample enriched with large-diameter metallic SWCNTs was obtained. The self-assembled fishnet-like m-SWCNT network showed excellent optical transparency and electrical conductivity.

High-quality, highly concentrated semiconducting single-wall carbon nanotubes for use in field effect transistors and biosensors

We developed a simple and scalable selective synthesis method of high-quality, highly concentrated semiconducting single-wall carbon nanotubes (s-SWCNTs) by in situ hydrogen etching. Samples containing ~93% s-SWCNTs were obtained in bulk. These s-SWCNTs with good structural integrity showed a high oxidation resistance temperature of ~800 °C. Thin-film transistors based on the s-SWCNTs demonstrated a high carrier mobility of 21.1 cm(2) V(-1) s(-1) at an on/off ratio of 1.1 × 10(4) and a high on/off ratio of 4.0 × 10(5) with a carrier mobility of 7.0 cm(2) V(-1) s(-1). A biosensor fabricated using the s-SWCNTs had a very low dopamine detection limit of 10(-18) mol/L at room temperature.

Type- and species-selective air etching of single-walled carbon nanotubes tracked with in situ Raman spectroscopy

The thermal oxidation of carbon nanotubes in air is investigated by in situ Raman spectroscopy. Etching rates are directly seen to be diameter, chirality, and type dependent. We directly track the evolution of bundled nanotube networks that undergo air etching from 300 to 600 °C. Some species are more robust than others. Changes to radial breathing mode (RBM) and G- peak structures suggest that metallic species etch away more rapidly, with smaller diameter semiconducting species etching more slowly and large diameter nanotubes, including semiconductors, etching last. The decay in integrated G and D band intensities is tracked and fit reasonably well with biexponential decay. The RBM evolution is better represented by a single exponential. All bands are fit to activation plots with RBMs showing significantly different rates.

A review of fabrication and applications of carbon nanotube film-based flexible electronics

Flexible electronics offer a wide-variety of applications such as flexible circuits, flexible displays, flexible solar cells, skin-like pressure sensors, and conformable RFID tags. Carbon nanotubes (CNTs) are a promising material for flexible electronics, both as the channel material in field-effect transistors (FETs) and as transparent electrodes, due to their high intrinsic carrier mobility, conductivity, and mechanical flexibility. In this feature article, we review the recent progress of CNTs in flexible electronics by describing both the processing and the applications of CNT-based flexible devices. To employ CNTs as the channel material in FETs, single-walled carbon nanotubes (SWNTs) are used. There are generally two methods of depositing SWNTs on flexible substrates-transferring CVD-grown SWNTs or solution-depositing SWNTs. Since CVD-grown SWNTs can be highly aligned, they often outperform solution-processed SWNT films that are typically in the form of random network. However, solution-based SWNTs can be printed at a large-scale and at low-cost, rendering them more appropriate for manufacturing. In either case, the removal of metallic SWNTs in an effective and a scalable manner is critical, which must still be developed and optimized. Nevertheless, promising results demonstrating SWNT-based flexible circuits, displays, RF-devices, and biochemical sensors have been reported by various research groups, proving insight into the exciting possibilities of SWNT-based FETs. In using carbon nanotubes as transparent electrodes (TEs), two main strategies have been implemented to fabricate highly conductive, transparent, and mechanically compliant films-superaligned films of CNTs drawn from vertically grown CNT forests using the "dry-drawing" technique and the deposition or embedding of CNTs onto flexible or stretchable substrates. The main challenge for CNT based TEs is to fabricate films that are both highly conductive and transparent. These CNT based TEs have been used in stretchable and flexible pressure, strain, and chemical and biological sensors. In addition, they have also been used as the anode and cathode in flexible light emitting diodes, solar cells, and supercapacitors. In summary, there are a number of challenges yet to overcome to optimize the processing and performance of CNT-based flexible electronics; nonetheless, CNTs remain a highly suitable candidate for various flexible electronic applications in the near future.

A statistical-based material and process guidelines for design of carbon nanotube field-effect transistors in gigascale integrated circuits

Carbon nanotube field-effect transistors (CNFETs) show great promise as building blocks of future integrated circuits. However, synthesizing single-walled carbon nanotubes (CNTs) with accurate chirality and exact positioning control has been widely acknowledged as an exceedingly complex task. Indeed, density and chirality variations in CNT growth can compromise the reliability of CNFET-based circuits. In this paper, we present a novel statistical compact model to estimate the failure probability of CNFETs to provide some material and process guidelines for the design of CNFETs in gigascale integrated circuits. We use measured CNT spacing distributions within the framework of detailed failure analysis to demonstrate that both the CNT density and the ratio of metallic to semiconducting CNTs play dominant roles in defining the failure probability of CNFETs. Besides, it is argued that the large-scale integration of these devices within an integrated circuit will be feasible only if a specific range of CNT density with an acceptable ratio of semiconducting to metallic CNTs can be adjusted in a typical synthesis process.

Hydrogenation, purification, and unzipping of carbon nanotubes by reaction with molecular hydrogen: road to graphane nanoribbons

Reaction of single-walled carbon nanotubes (SWNTs) with hydrogen gas was studied in a temperature interval of 400-550 °C and at hydrogen pressure of 50 bar. Hydrogenation of nanotubes was observed for samples treated at 400-450 °C with about 1/3 of carbon atoms forming covalent C-H bonds, whereas hydrogen treatment at higher temperatures (550 °C) occurs as an etching. Unzipping of some SWNTs into graphene nanoribbons is observed as a result of hydrogenation at 400-550 °C. Annealing in hydrogen gas at elevated conditions for prolonged periods of time (72 h) is demonstrated to result also in nanotube opening, purification of nanotubes from amorphous carbon, and removal of carbon coatings from Fe catalyst particles, which allows their complete elimination by acid treatment.

A Comprehensive Review on Separation Methods and Techniques for Single-Walled Carbon Nanotubes

Structural control of single-walled carbon nanotubes (SWNTs) is attracting enormous interest in view of their applications to nanoelectronics and nanooptics. Actually, more than 200 papers regarding separation of SWNTs have been published since 1998. In this review, they are classified into the following five sections according to the separation methods; electrophoresis, centrifugation, chromatography, selective solubilization and selective reaction. In each method, all literature is summarized in tables showing the separated objects (metallic/semiconducting (M/S), length, diameter, (n, m) structure and/or handedness), the production process of the used SWNTs (CoMoCAT, HiPco, arc discharge and/or laser vaporization) and the employed chemicals, such as detergents and polymers. Changes in annual number of publications related to this subject are also discussed.

Selective generation of single-walled carbon nanotubes with metallic, semiconducting and other unique electronic properties

As-synthesized single-walled carbon nanotubes (SWNTs) are mixtures of semiconducting and metallic species and separation of the two is of crucial importance for many applications. In this article, the methods employed for the enrichment of semiconducting and metallic SWNTs are presented, along with possible procedures to prepare either of the species selectively. Equally important are the methods for chirality selection. The discovery of metal-semiconductor transitions in SWNTs induced by interaction with electron donor and acceptor molecules is not only of academic interest, but may also find applications. Synthesis of Y-junction SWNTs with unique electronic properties at the junction is yet to be fully accomplished.

Effects of gas composition on highly efficient surface modification of multi-walled carbon nanotubes by cation treatment

High incident energy hydrogen and/or oxygen cations are generated by electron cyclotron resonance system, and then used to highly efficiently modify multi-walled carbon nanotubes (MWCNTs). The effects of various H2/O2 gas compositions on the modification process are studied. A systematic characterization method utilizing a combination of X-ray photoelectron spectroscopy (XPS), scanning electron microscopy, Raman spectroscopy, and thermogravimetric analysis (TGA) is used to evaluate the effects of various H2/O2gas compositions on MWCNT functionalization. The Raman results show that the ID/IG ratio is directly affected by H2 concentration in gas mixture, and the treatment applying a H2/O2 gas mixture with ratio of 40/10 (sccm/sccm) can yield the nanotubes with the highest ID/IG ratio (1.27). The XPS results suggest that the gas mixture with ratio of 25/25 (sccm/sccm) is most effective in introducing oxygen-containing functional groups and reducing amorphous carbon. The TGA suggests that the structural change of the treated nanotubes is marginal by this method with any gas condition.

Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs

We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.

Transition of single-walled carbon nanotubes from metallic to semiconducting in field-effect transistors by hydrogen plasma treatment

We report hydrogen plasma treatment results on converting the metallic single-walled carbon nanotubes to semiconducting single-walled carbon nanotubes. We found that the as-grown single-walled carbon nanotubes (SWNTs) can be sorted as three groups which behave as metallic, as-metallic, and semiconducting SWNTs. These three groups have different changes under hydrogen plasma treatment and successive annealing process. The SWNTs can be easily hydrogenated in the hydrogen plasma environment and the as-metallic SWNTs can be transformed to semiconducting SWNTs. The successive annealing process can break the C-H bond, so the conversion is reversible.

Preferential Destruction of Metallic Single-Walled Carbon Nanotubes by Laser Irradiation

Upon laser irradiation in air, metallic single-walled carbon nanotubes (SWNTs) in carbon nanotube thin film can be destroyed in preference to their semiconducting counterparts when the wavelength and power intensity of the irradiation are appropriate and the carbon nanotubes are not heavily bundled. Our method takes advantage of these two species' different rates of photolysis-assisted oxidation, creating the possibility of defining the semiconducting portions of carbon nanotube (CNT) networks using optical lithography, particularly when constructing all-CNT FETs (without metal electrodes) in the future.