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Lozano MS, Gómez VJ. Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires. NANOSCALE ADVANCES 2023; 5:1890-1909. [PMID: 36998660 PMCID: PMC10044505 DOI: 10.1039/d2na00956k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Accepted: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III-V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III-V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III-V NWs obtained by the bottom-up vapor-liquid-solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.
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Affiliation(s)
- Miguel Sinusia Lozano
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
| | - Víctor J Gómez
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
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2
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Gómez VJ, Marnauza M, Dick KA, Lehmann S. Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires. NANOSCALE ADVANCES 2022; 4:3330-3341. [PMID: 36131713 PMCID: PMC9417278 DOI: 10.1039/d2na00109h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 03/23/2022] [Indexed: 06/15/2023]
Abstract
In this work we demonstrate a two-fold selectivity control of InAs shells grown on crystal phase and morphology engineered GaAs nanowire (NW) core templates. This selectivity occurs driven by differences in surface energies of the NW core facets. The occurrence of the different facets itself is controlled by either forming different crystal phases or additional tuning of the core NW morphology. First, in order to study the crystal phase selectivity, GaAs NW cores with an engineered crystal phase in the axial direction were employed. A crystal phase selective growth of InAs on GaAs was found for high growth rates and short growth times. Secondly, the facet-dependant selectivity of InAs growth was studied on crystal phase controlled GaAs cores which were additionally morphology-tuned by homoepitaxial overgrowth. Following this route, the original hexagonal cores with {110} sidewalls were converted into triangular truncated NWs with ridges and predominantly {112}B facets. By precisely tuning the growth parameters, the growth of InAs is promoted over the ridges and reduced over the {112}B facets with indications of also preserving the crystal phase selectivity. In all cases (different crystal phase and facet termination), selectivity is lost for extended growth times, thus, limiting the total thickness of the shell grown under selective conditions. To overcome this issue we propose a 2-step growth approach, combining a high growth rate step followed by a low growth rate step. The control over the thickness of the InAs shells while maintaining the selectivity is demonstrated by means of a detailed transmission electron microscopy analysis. This proposed 2-step growth approach enables new functionalities in 1-D structures formed by using bottom-up techniques, with a high degree of control over shell thickness and deposition selectivity.
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Affiliation(s)
- Víctor J Gómez
- Nanophotonics Technology Center, Universidad Politécnica de Valencia Camino de Vera, s/n Building 8F | 2a Floor 46022 Valencia Spain
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
| | - Mikelis Marnauza
- Centre for Analysis and Synthesis and NanoLund, Lund University Box 124 221 00 Lund Sweden
| | - Kimberly A Dick
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
- Centre for Analysis and Synthesis and NanoLund, Lund University Box 124 221 00 Lund Sweden
| | - Sebastian Lehmann
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
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Mårtensson EK, Johansson J, Dick KA. Simulating Vapor–Liquid–Solid Growth of Au-Seeded InGaAs Nanowires. ACS NANOSCIENCE AU 2022; 2:239-249. [PMID: 37101824 PMCID: PMC10125151 DOI: 10.1021/acsnanoscienceau.1c00052] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Ternary III-V nanowires are commonly grown using the Au-seeded vapor-liquid-solid method, wherein the solid nanowires are grown from nanoscale liquid seed particles, which are supplied with growth species from the surrounding vapor phase. A result of the small size of these seed particles is that their composition can vary significantly during the cyclical layer-by-layer growth, despite experiencing a constant pressure of growth species from the surrounding vapor phase. Variations in the seed particle composition can greatly affect the solid nanowire composition, and these cyclical dynamics are poorly understood for ternary nanowire growth. Here, we present a method for simulating nanowire growth which captures the complex cyclical dynamics using a kinetic Monte Carlo framework. In the framework, a nanowire grows through the attachment or detachment of one III-V pair at the time, with rates that are based on the momentary composition of the seed particle. The composition of the seed evolves through the attachment and detachment of III-V pairs to the solid nanowire and through the impingement or evaporation of single atoms to the surrounding vapor. Here, we implement this framework using the As-Au-Ga-In materials system and use it to simulate the growth of Au-seeded InGaAs nanowires with an average solid Ga/III ratio around 0.5. The results show that nucleation preferentially occurs via clusters of InAs and that the compositional hierarchy of the liquid seed (X As < X Ga < X In) determines much of the dynamics of the system. We see that imposing a constraint on the simulation, that only the most recently attached III-V pair can be detached, resulted in a significant narrowing of the compositional profile of the nanowire. In addition, our results suggest that, for ternary systems where the two binaries are heavily mismatched, the dynamics of the seed particle may result in an oscillating compositional profile.
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Affiliation(s)
- Erik K. Mårtensson
- NanoLund and Division of Solid State Physics, Lund University, SE-221 00 Lund, Sweden
| | - Jonas Johansson
- NanoLund and Division of Solid State Physics, Lund University, SE-221 00 Lund, Sweden
| | - Kimberly A. Dick
- NanoLund and Division of Solid State Physics, Lund University, SE-221 00 Lund, Sweden
- Centre for Analysis and Synthesis, Lund University, SE-221 00 Lund, Sweden
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4
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Tornberg M, Sjökvist R, Kumar K, Andersen CR, Maliakkal CB, Jacobsson D, Dick KA. Direct Observations of Twin Formation Dynamics in Binary Semiconductors. ACS NANOSCIENCE AU 2022; 2:49-56. [PMID: 37101516 PMCID: PMC10125175 DOI: 10.1021/acsnanoscienceau.1c00021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 04/28/2023]
Abstract
With the increased demand for controlled deterministic growth of III-V semiconductors at the nanoscale, the impact and interest of understanding defect formation and crystal structure switching becomes increasingly important. Vapor-liquid-solid (VLS) growth of semiconductor nanocrystals is an important mechanism for controlling and studying the formation of individual crystal layers and stacking defects. Using in situ studies, combining atomic resolution of transmission electron microscopy and controlled VLS crystal growth using metal organic chemical vapor deposition, we investigate the simplest achievable change in atomic layer stacking-single twinned layers formed in GaAs. Using Au-assisted GaAs nanowires of various diameters, we study the formation of individual layers with atomic resolution to reveal the growth difference in forming a twin defect. We determine that the formation of a twinned layer occurs significantly more slowly than that of a normal crystal layer. To understand this, we conduct thermodynamic modeling and determine that the propagation of a twin is limited by the energy cost of forming the twin interface. Finally, we determine that the slower propagation of twinned layers increases the probability of additional layers nucleating, such that multiple layers grow simultaneously. This observation challenges the current understanding that continuous uniform epitaxial growth, especially in the case of liquid-metal assisted nanowires, proceeds one single layer at a time and that its progression is limited by the nucleation rate.
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Affiliation(s)
- Marcus Tornberg
- Centre
for Analysis and Synthesis, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Robin Sjökvist
- Centre
for Analysis and Synthesis, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Krishna Kumar
- Centre
for Analysis and Synthesis, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Christopher R. Andersen
- Centre
for Analysis and Synthesis, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Centre for Nano Fabrication and Characterization, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Carina B. Maliakkal
- Centre
for Analysis and Synthesis, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy (nCHREM), Lund University, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy (nCHREM), Lund University, 22100 Lund, Sweden
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5
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Gil E, Andre Y. Growth of long III-As NWs by hydride vapor phase epitaxy. NANOTECHNOLOGY 2021; 32:162002. [PMID: 33434903 DOI: 10.1088/1361-6528/abdb14] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this review paper, we focus on the contribution of hydride vapor phase epitaxy (HVPE) to the growth of III-As nanowires (NWs). HVPE is the third epitaxial technique involving gaseous precursors together with molecular beam epitaxy (MBE) and metal-organic VPE (MOVPE) to grow III-V semiconductor compounds. Although a pioneer in the growth of III-V epilayers, HVPE arrived on the scene of NW growth the very last. Yet, HVPE brought different and interesting insights to the topic since HVPE is a very reactive growth system, exhibiting fast growth property, while growth is governed by the temperature-dependent kinetics of surface mechanisms. After a brief review of the specific attributes of HVPE growth, we first feature the innovative polytypism-free crystalline quality of cubic GaAs NWs grown by Au-assisted vapor-liquid-solid (VLS) epitaxy, on exceptional length and for radii down to 6 nm. We then move to the integration of III-V NWs with silicon. Special emphasis is placed on the nucleation issue experienced by both Au-assisted VLS MOVPE and HVPE, and a model demonstrates that the presence of Si atoms in the liquid droplets suppresses nucleation of NWs unless a high Ga concentation is reached in the catalyst droplet. The second known issue is the amphoteric behavior of Si when it is used as doping element for GaAs. On the basis of compared MBE and HVPE experimental data, a model puts forward the role of the As concentration in the liquid Au-Ga-As-Si droplets to yield p-type (low As content) or n-type (high As content) GaAs:Si NWs. We finally describe how self-catalysed VLS growth and condensation growth are implemented by HVPE for the growth of GaAs and InAs NWs on Si.
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Affiliation(s)
- Evelyne Gil
- Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, F-63000 Clermont-Ferrand, France
- ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Yamina Andre
- Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, F-63000 Clermont-Ferrand, France
- ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
- Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S4L7, Canada
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6
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Davtyan A, Kriegner D, Holý V, AlHassan A, Lewis RB, McDermott S, Geelhaar L, Bahrami D, Anjum T, Ren Z, Richter C, Novikov D, Müller J, Butz B, Pietsch U. X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires. J Appl Crystallogr 2020; 53:1310-1320. [PMID: 33117111 PMCID: PMC7534542 DOI: 10.1107/s1600576720011516] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Accepted: 08/22/2020] [Indexed: 11/30/2022] Open
Abstract
Core-shell nanowires (NWs) with asymmetric shells allow for strain engineering of NW properties because of the bending resulting from the lattice mismatch between core and shell material. The bending of NWs can be readily observed by electron microscopy. Using X-ray diffraction analysis with a micro- and nano-focused beam, the bending radii found by the microscopic investigations are confirmed and the strain in the NW core is analyzed. For that purpose, a kinematical diffraction theory for highly bent crystals is developed. The homogeneity of the bending and strain is studied along the growth axis of the NWs, and it is found that the lower parts, i.e. close to the substrate/wire interface, are bent less than the parts further up. Extreme bending radii down to ∼3 µm resulting in strain variation of ∼2.5% in the NW core are found.
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Affiliation(s)
- Arman Davtyan
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Dominik Kriegner
- Institut für Festkörper- und Materialphysik, Technical University Dresden and Würzburg–Dresden Cluster of Excellence ct.qmat, Germany
| | - Václav Holý
- Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic
| | - Ali AlHassan
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Ryan B. Lewis
- Department of Engineering Physics, McMaster University, L8S 4L7 Hamilton, Canada
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany
| | - Spencer McDermott
- Department of Engineering Physics, McMaster University, L8S 4L7 Hamilton, Canada
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany
| | - Danial Bahrami
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Taseer Anjum
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Zhe Ren
- Synchrotron Radiation Research, Lund University, 221 00 Lund, Sweden
| | - Carsten Richter
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Dmitri Novikov
- Deutsches Elektronen-Synchrotron, PETRA III, D-22607 Hamburg, Germany
| | - Julian Müller
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Benjamin Butz
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Ullrich Pietsch
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
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7
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Maliakkal CB, Mårtensson EK, Tornberg MU, Jacobsson D, Persson AR, Johansson J, Wallenberg LR, Dick KA. Independent Control of Nucleation and Layer Growth in Nanowires. ACS NANO 2020; 14:3868-3875. [PMID: 32049491 PMCID: PMC7307954 DOI: 10.1021/acsnano.9b09816] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2019] [Accepted: 02/12/2020] [Indexed: 05/10/2023]
Abstract
Control of the crystallization process is central to developing nanomaterials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are a promising material system in which the ability to form components with structure and composition not achievable in bulk is well-established. Here, we use in situ TEM imaging of Au-catalyzed GaAs nanowire growth to understand the processes by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process-nucleation and layer growth-can occur on similar time scales and can be controlled independently using different growth parameters. Importantly, the layer growth process contributes significantly to the growth time for all conditions and will play a major role in determining material properties such as compositional uniformity, dopant density, and impurity incorporation. The results are understood through theoretical simulations correlating the growth dynamics, liquid droplet, and experimental parameters. The key insights discussed here are not restricted to Au-catalyzed GaAs nanowire growth but can be extended to most compound nanowire growths in which the different growth species has very different solubility in the catalyst particle.
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Affiliation(s)
- Carina B. Maliakkal
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Erik K. Mårtensson
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Marcus Ulf Tornberg
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Axel R. Persson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Jonas Johansson
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Lars Reine Wallenberg
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
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8
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Panciera F, Baraissov Z, Patriarche G, Dubrovskii VG, Glas F, Travers L, Mirsaidov U, Harmand JC. Phase Selection in Self-catalyzed GaAs Nanowires. NANO LETTERS 2020; 20:1669-1675. [PMID: 32027145 DOI: 10.1021/acs.nanolett.9b04808] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Crystal phase switching between the zincblende and wurtzite structures in III-V nanowires is crucial from the fundamental viewpoint as well as for electronic and photonic applications of crystal phase heterostructures. Here, the results of in situ monitoring of self-catalyzed vapor-liquid-solid growth of GaAs nanowires by molecular beam epitaxy inside a transmission electron microscope are presented. It is demonstrated that the occurrence of the zincblende or wurtzite phase in self-catalyzed nanowires is determined by the sole parameter, the droplet contact angle, which can be finely tuned by changing the group III and V fluxes. The zincblende phase forms at small (<100°) and large (>125°) contact angles, whereas pure wurtzite phase is observed for intermediate contact angles. Wurtzite nanowires are restricted by vertical sidewalls, whereas zincblende nanowires taper or develop the truncated edge at their top. These findings are explained within a dedicated model for the surface energetics. These results give a clear route for the crystal phase control in Au-free III-V nanowires. On a more general note, in situ growth monitoring with atomic resolution and at the technological-relevant growth rates is shown to be a powerful tool for the fine-tuning of material properties at the nanoscale.
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Affiliation(s)
- Federico Panciera
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
- Centre for BioImaging Sciences, Department of Biological Sciences, National University of Singapore, 14 Science Drive 4, 117557, Singapore
| | - Zhaslan Baraissov
- Centre for BioImaging Sciences, Department of Biological Sciences, National University of Singapore, 14 Science Drive 4, 117557, Singapore
- Centre for Advanced 2D Materials and Department of Physics, National University of Singapore, Science Drive 4, 117543, Singapore
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | | | - Frank Glas
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - Laurent Travers
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - Utkur Mirsaidov
- Centre for BioImaging Sciences, Department of Biological Sciences, National University of Singapore, 14 Science Drive 4, 117557, Singapore
- Centre for Advanced 2D Materials and Department of Physics, National University of Singapore, Science Drive 4, 117543, Singapore
| | - Jean-Christophe Harmand
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
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9
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In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth. Nat Commun 2019; 10:4577. [PMID: 31594930 PMCID: PMC6783420 DOI: 10.1038/s41467-019-12437-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Accepted: 09/10/2019] [Indexed: 11/16/2022] Open
Abstract
Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux. Semiconductor nanowires are promising materials for miniaturized devices, but a thorough understanding of their growth mechanism is necessary for controlled synthesis. Here, the authors use in situ spectroscopy and microscopy to measure the composition of the catalyst droplet as a function of different growth parameters during Au-seeded GaAs nanowire growth.
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10
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Ofoegbuna T, Darapaneni P, Sahu S, Plaisance C, Dorman JA. Stabilizing the B-site oxidation state in ABO 3 perovskite nanoparticles. NANOSCALE 2019; 11:14303-14311. [PMID: 31321389 DOI: 10.1039/c9nr04155a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The stabilization of the B-site oxidation state in ABO3 perovskites using wet-chemical methods is a synthetic challenge, which is of fundamental and practical interest for energy storage and conversion devices. In this work, defect-controlled (Sr-deficiency and oxygen vacancies) strontium niobium(iv) oxide (Sr1-xNbO3-δ, SNO) metal oxide nanoparticles (NPs) were synthesized for the first time using a low-pressure wet-chemistry synthesis. The experiments were performed under reduced oxygen partial pressure to prevent by-product formation and with varying Sr/Nb molar ratio to favor the formation of Nb4+ pervoskites. At a critical Sr to Nb ratio (Sr/Nb = 1.3), a phase transition is observed forming an oxygen-deficient SrNbO3 phase. Structural refinement on the resultant diffraction pattern shows that the SNO NPs consists of a near equal mixture of SrNbO3 and Sr0.7NbO3-δ crystal phases. A combination of Rietveld refinement and X-ray photoelectron spectroscopy (XPS) confirmed the stabilization of the +4 oxidation state and the formation of oxygen vacancies. The Nb local site symmetry was extracted through Raman spectroscopy and modeled using DFT. As further confirmation, the particles demonstrate the expected absorption highlighting their restored optoelectronic properties. This low-pressure wet-chemical approach for stabilizing the oxidation state of a transition metal has the potential to be extended to other oxygen sensitive, low dimensional perovskite oxides with unique properties.
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Affiliation(s)
- Tochukwu Ofoegbuna
- Cain Department of Chemical Engineering, Louisiana State University, Baton Rouge, Louisiana 70803, USA.
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11
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Zamani RR, Arbiol J. Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy. NANOTECHNOLOGY 2019; 30:262001. [PMID: 30812017 DOI: 10.1088/1361-6528/ab0b0a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact on our understanding of materials science, especially in the field of semiconductor one-dimensional (1D) nanostructures. Recent advancements in TEM instrumentation, in particular aberration correction and monochromation, have enabled pioneering experiments in complex nanostructure material systems. This review aims to address these understandings through the applications of the methodology for semiconductor nanostructures. It points out various electron microscopy techniques, in particular scanning TEM (STEM) imaging and spectroscopy techniques, with their already-employed or potential applications on 1D nanostructured semiconductors. We keep the main focus of the paper on the electronic and optoelectronic properties of such semiconductors, and avoid expanding it further. In the first part of the review, we give a brief introduction to each of the STEM-based techniques, without detailed elaboration, and mention the recent technological and conceptual developments which lead to novel characterization methodologies. For further reading, we refer the audience to a handful of papers in the literature. In the second part, we highlight the recent examples of application of the STEM methodology on the 1D nanostructure semiconductor materials, especially III-V, II-V, and group IV bare and heterostructure systems. The aim is to address the research questions on various physical properties and introduce solutions by choosing the appropriate technique that can answer the questions. Potential applications will also be discussed, the ones that have already been used for bulk and 2D materials, and have shown great potential and promise for 1D nanostructure semiconductors.
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Affiliation(s)
- Reza R Zamani
- Department of Physics, Chalmers University of Technology, Gothenburg, SE-41296, Sweden. Interdisciplinary Centre for Electron Microscopy (CIME), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland
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12
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Mårtensson EK, Lehmann S, Dick KA, Johansson J. Simulation of GaAs Nanowire Growth and Crystal Structure. NANO LETTERS 2019; 19:1197-1203. [PMID: 30618259 DOI: 10.1021/acs.nanolett.8b04637] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Growing GaAs nanowires with well-defined crystal structures is a challenging task, but may be required for the fabrication of future devices. In terms of crystal phase selection, the connection between theory and experiment is limited, leaving experimentalists with a trial and error approach to achieve the desired crystal structures. In this work, we present a modeling approach designed to provide the missing connection, combining classical nucleation theory, stochastic simulation, and mass transport through the seed particle. The main input parameters for the model are the flows of the growth species and the temperature of the process, giving the simulations the same flexibility as experimental growth. The output of the model can also be directly compared to experimental observables, such as crystal structure of each bilayer throughout the length of the nanowire and the composition of the seed particle. The model thus enables for observed experimental trends to be directly explored theoretically. Here, we use the model to simulate nanowire growth with varying As flows, and our results match experimental trends with a good agreement. By analyzing the data from our simulation, we find theoretical explanations for these experimental results, providing new insights into how the crystal structure is affected by the experimental parameters available for growth.
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Affiliation(s)
- Erik K Mårtensson
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, Lund 22100 , Sweden
| | - Sebastian Lehmann
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, Lund 22100 , Sweden
| | - Kimberly A Dick
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, Lund 22100 , Sweden
- Centre for Analysis and Synthesis , Lund University , P.O. Box 124, Lund 22100 , Sweden
| | - Jonas Johansson
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, Lund 22100 , Sweden
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13
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Hallberg RT, Messing ME, Dick KA. Nanowire morphology and particle phase control by tuning the In concentration of the foreign metal nanoparticle. NANOTECHNOLOGY 2019; 30:054005. [PMID: 30511656 DOI: 10.1088/1361-6528/aaefbe] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Controllable particle assisted growth (PAG) of III-V nanowires is today almost exclusively done with Au, Ga or In nanoparticles, whereas other metals often yield nanowires with uncontrolled growth directions. To improve the control of the initial growth direction in PAG, independent of choice of metal, we propose to initiate nanowire growth from a group-III-rich foreign metal particle. For III-V nanowire growth, the group III concentration of the particle can be made to increase or decrease with the relative supply of group III and group V material, which can be used to promote the liquid phase that is necessary for vapor-liquid-solid growth. In this paper, 30 nm Pd nanoparticles are used to develop growth conditions for In-rich PAG of InAs nanowires. The particle size evolution for different growth times and V/III ratios is correlated with changes in nanowire density and morphology. In addition, we demonstrate In-rich Co, Pd, Pt and Rh nanoparticles and optimized In-rich PAG from Au and Pd seeds. The Au and Pd seeded nanowires are remarkably similar and by tuning the particle composition we trigger a morphological change. The vertical nanowire morphology is associated with In-rich nanoparticles that contain a liquid phase. The curly nanowire morphology, with random growth directions have an In concentration less than or equal to that of the most In rich compound of the seed metal-In system.
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14
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Zhang Z, Liu N, Li L, Su J, Chen PP, Lu W, Gao Y, Zou J. In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale. NANO LETTERS 2018; 18:6597-6603. [PMID: 30234307 DOI: 10.1021/acs.nanolett.8b03231] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In situ transmission electron microscopy investigation of structural transformation in III-V nanowires is essential for providing direct insight into the structural stability of III-V nanowires under elevated temperature. In this study, through in situ heating investigation in a transmission electron microscope, the detailed structural transformation of InAs nanowires from wurtzite structure to zinc-blende structure at the catalyst/nanowire interface is witnessed on the atomic level. Through detailed structural and dynamic analysis, it was found that the nucleation site of each new layer of InAs and catalyst surface energy play a decisive role in the growth of the zinc-blende structure. This study provides new insights into the growth mechanism of zinc-blende-structured III-V nanowires.
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Affiliation(s)
- Zhi Zhang
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics & Wuhan National Laboratory for Optoelectronics (WNLO) , Huazhong University of Science and Technology (HUST) , Luoyu Road 1037 , Wuhan 430074 , P. R. China
| | - Nishuang Liu
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics & Wuhan National Laboratory for Optoelectronics (WNLO) , Huazhong University of Science and Technology (HUST) , Luoyu Road 1037 , Wuhan 430074 , P. R. China
| | - Luying Li
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics & Wuhan National Laboratory for Optoelectronics (WNLO) , Huazhong University of Science and Technology (HUST) , Luoyu Road 1037 , Wuhan 430074 , P. R. China
| | - Jun Su
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics & Wuhan National Laboratory for Optoelectronics (WNLO) , Huazhong University of Science and Technology (HUST) , Luoyu Road 1037 , Wuhan 430074 , P. R. China
| | - Ping-Ping Chen
- National Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road , Shanghai 200083 , China
| | - Wei Lu
- National Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road , Shanghai 200083 , China
| | - Yihua Gao
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics & Wuhan National Laboratory for Optoelectronics (WNLO) , Huazhong University of Science and Technology (HUST) , Luoyu Road 1037 , Wuhan 430074 , P. R. China
| | - Jin Zou
- Materials Engineering & Centre for Microscopy and Microanalysis , The University of Queensland , St. Lucia , Queensland 4072 , Australia
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15
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Timofeeva M, Lang L, Timpu F, Renaut C, Bouravleuv A, Shtrom I, Cirlin G, Grange R. Anapoles in Free-Standing III-V Nanodisks Enhancing Second-Harmonic Generation. NANO LETTERS 2018; 18:3695-3702. [PMID: 29771127 DOI: 10.1021/acs.nanolett.8b00830] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Nonradiating electromagnetic configurations in nanostructures open new horizons for applications due to two essential features: a lack of energy losses and invisibility to the propagating electromagnetic field. Such radiationless configurations form a basis for new types of nanophotonic devices, in which a strong electromagnetic field confinement can be achieved together with lossless interactions between nearby components. In our work, we present a new design of free-standing disk nanoantennas with nonradiating current distributions for the optical near-infrared range. We show a novel approach to creating nanoantennas by slicing III-V nanowires into standing disks using focused ion-beam milling. We experimentally demonstrate the suppression of the far-field radiation and the associated strong enhancement of the second-harmonic generation from the disk nanoantennas. With a theoretical analysis of the electromagnetic field distribution using multipole expansions in both spherical and Cartesian coordinates, we confirm that the demonstrated nonradiating configurations are anapoles. We expect that the presented procedure of designing and producing disk nanoantennas from nanowires becomes one of the standard approaches to fabricating controlled chains of standing nanodisks with different designs and configurations. These chains can be essential building blocks for new types of lasers and sensors with low power consumption.
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Affiliation(s)
- Maria Timofeeva
- ETH Zurich , Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , Auguste-Piccard Hof 1 , 8093 Zurich , Switzerland
| | - Lukas Lang
- ETH Zurich , Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , Auguste-Piccard Hof 1 , 8093 Zurich , Switzerland
| | - Flavia Timpu
- ETH Zurich , Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , Auguste-Piccard Hof 1 , 8093 Zurich , Switzerland
| | - Claude Renaut
- ETH Zurich , Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , Auguste-Piccard Hof 1 , 8093 Zurich , Switzerland
| | - Alexei Bouravleuv
- Saint Petersburg Academic University , Ul. Khlopina 8/3 , 194021 Saint Petersburg , Russia
| | - Igor Shtrom
- Saint Petersburg Academic University , Ul. Khlopina 8/3 , 194021 Saint Petersburg , Russia
| | - George Cirlin
- ITMO University , Kronverkskiy 49 , 197101 Saint Petersburg , Russia
| | - Rachel Grange
- ETH Zurich , Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , Auguste-Piccard Hof 1 , 8093 Zurich , Switzerland
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16
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Schroth P, Jakob J, Feigl L, Mostafavi Kashani SM, Vogel J, Strempfer J, Keller TF, Pietsch U, Baumbach T. Radial Growth of Self-Catalyzed GaAs Nanowires and the Evolution of the Liquid Ga-Droplet Studied by Time-Resolved in Situ X-ray Diffraction. NANO LETTERS 2018; 18:101-108. [PMID: 29283268 DOI: 10.1021/acs.nanolett.7b03486] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on a growth study of self-catalyzed GaAs nanowires based on time-resolved in situ X-ray structure characterization during molecular-beam-epitaxy in combination with ex situ scanning-electron-microscopy. We reveal the evolution of nanowire radius and polytypism and distinguish radial growth processes responsible for tapering and side-wall growth. We interpret our results using a model for diameter self-stabilization processes during growth of self-catalyzed GaAs nanowires including the shape of the liquid Ga-droplet and its evolution during growth.
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Affiliation(s)
- Philipp Schroth
- Solid State Physics, Department of Physics, University of Siegen , Walter-Flex Straße 3, D-57068 Siegen, Germany
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology , Kaiserstraße 12, D-76131 Karlsruhe, Germany
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
| | - Julian Jakob
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology , Kaiserstraße 12, D-76131 Karlsruhe, Germany
| | - Ludwig Feigl
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
| | | | - Jonas Vogel
- Solid State Physics, Department of Physics, University of Siegen , Walter-Flex Straße 3, D-57068 Siegen, Germany
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
| | - Jörg Strempfer
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
| | - Thomas F Keller
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
- Fachbereich Physik, Universität Hamburg , Jungiusstraße 9, D-20355 Hamburg, Germany
| | - Ullrich Pietsch
- Solid State Physics, Department of Physics, University of Siegen , Walter-Flex Straße 3, D-57068 Siegen, Germany
| | - Tilo Baumbach
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology , Kaiserstraße 12, D-76131 Karlsruhe, Germany
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
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17
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Lähnemann J, Ajay A, Den Hertog MI, Monroy E. Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires. NANO LETTERS 2017; 17:6954-6960. [PMID: 28961016 DOI: 10.1021/acs.nanolett.7b03414] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 μm wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-section. Furthermore, the three-dimensional carrier confinement in nanowire heterostructures opens new possibilities to tune the carrier relaxation time. However, the generation of structural defects and the surface sensitivity of GaAs nanowires have so far hindered the fabrication of nanowire intersubband devices. Here, we report the first demonstration of intersubband photodetection in a nanowire, using GaN nanowires containing a GaN/AlN superlattice absorbing at 1.55 μm. The combination of spectral photocurrent measurements with 8-band k·p calculations of the electronic structure supports the interpretation of the result as intersubband photodetection in these extremely short-period superlattices. We observe a linear dependence of the photocurrent with the incident illumination power, which confirms the insensitivity of the intersubband process to surface states and highlights how architectures featuring large surface-to-volume ratios are suitable as intersubband photodetectors. Our analysis of the photocurrent characteristics points out routes for an improvement of the device performance. This first nanowire based intersubband photodetector represents a technological breakthrough that paves the way to a powerful device platform with potential for ultrafast, ultrasensitive photodetectors and highly efficient quantum cascade emitters with improved thermal stability.
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Affiliation(s)
- Jonas Lähnemann
- Université Grenoble-Alpes, CEA, INAC, PHELIQS , 17 av. des Martyrs, 38000 Grenoble, France
| | - Akhil Ajay
- Université Grenoble-Alpes, CEA, INAC, PHELIQS , 17 av. des Martyrs, 38000 Grenoble, France
| | - Martien I Den Hertog
- Université Grenoble-Alpes, CNRS, Institut Néel , 25 av. des Martyrs, 38000 Grenoble, France
| | - Eva Monroy
- Université Grenoble-Alpes, CEA, INAC, PHELIQS , 17 av. des Martyrs, 38000 Grenoble, France
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18
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Assali S, Lähnemann J, Vu TTT, Jöns KD, Gagliano L, Verheijen MA, Akopian N, Bakkers EPAM, Haverkort JEM. Crystal Phase Quantum Well Emission with Digital Control. NANO LETTERS 2017; 17:6062-6068. [PMID: 28892396 PMCID: PMC5642001 DOI: 10.1021/acs.nanolett.7b02489] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2017] [Revised: 09/06/2017] [Indexed: 05/31/2023]
Abstract
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.
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Affiliation(s)
- S. Assali
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
| | - J. Lähnemann
- Paul-Drude-Institut
für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - T. T. T. Vu
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
| | - K. D. Jöns
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2600 GA, Delft, The Netherlands
| | - L. Gagliano
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
| | - M. A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
- Philips
Innovation Services Eindhoven, High Tech Campus 11, 5656 AE, Eindhoven, The
Netherlands
| | - N. Akopian
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2600 GA, Delft, The Netherlands
| | - E. P. A. M. Bakkers
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2600 GA, Delft, The Netherlands
| | - J. E. M. Haverkort
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
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19
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Davtyan A, Lehmann S, Kriegner D, Zamani RR, Dick KA, Bahrami D, Al-Hassan A, Leake SJ, Pietsch U, Holý V. Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction. JOURNAL OF SYNCHROTRON RADIATION 2017; 24:981-990. [PMID: 28862620 PMCID: PMC5580788 DOI: 10.1107/s1600577517009584] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2017] [Accepted: 06/27/2017] [Indexed: 05/25/2023]
Abstract
Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000\bar{1}] direction in the vicinity of the wurtzite 00\bar{1}\bar{5} Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.
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Affiliation(s)
- Arman Davtyan
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Sebastian Lehmann
- Department of Solid State Physics/NanoLund, Lund University, Box 118, S-22100 Lund, Sweden
| | - Dominik Kriegner
- Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16 Praha, Czech Republic
| | - Reza R. Zamani
- Department of Solid State Physics/NanoLund, Lund University, Box 118, S-22100 Lund, Sweden
| | - Kimberly A. Dick
- Department of Solid State Physics/NanoLund, Lund University, Box 118, S-22100 Lund, Sweden
- Center for Analysis and Synthesis, Lund University, Box 124, S-22100 Lund, Sweden
| | - Danial Bahrami
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Ali Al-Hassan
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Steven J. Leake
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Ullrich Pietsch
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Václav Holý
- Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16 Praha, Czech Republic
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20
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Timofeeva M, Bouravleuv A, Cirlin G, Shtrom I, Soshnikov I, Reig Escalé M, Sergeyev A, Grange R. Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires. NANO LETTERS 2016; 16:6290-6297. [PMID: 27657488 DOI: 10.1021/acs.nanolett.6b02592] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
In this work, we report an optical method for characterizing crystal phases along single-semiconductor III-V nanowires based on the measurement of polarization-dependent second-harmonic generation. This powerful imaging method is based on a per-pixel analysis of the second-harmonic-generated signal on the incoming excitation polarization. The dependence of the second-harmonic generation responses on the nonlinear second-order susceptibility tensor allows the distinguishing of areas of pure wurtzite, zinc blende, and mixed and rotational twins crystal structures in individual nanowires. With a far-field nonlinear optical microscope, we recorded the second-harmonic generation in GaAs nanowires and precisely determined their various crystal structures by analyzing the polar response for each pixel of the images. The predicted crystal phases in GaAs nanowire are confirmed with scanning transmission electron and high-resolution transmission electron measurements. The developed method of analyzing the nonlinear polar response of each pixel can be used for an investigation of nanowire crystal structure that is quick, sensitive to structural transitions, nondestructive, and on-the-spot. It can be applied for the crystal phase characterization of nanowires built into optoelectronic devices in which electron microscopy cannot be performed (for example, in lab-on-a-chip devices). Moreover, this method is not limited to GaAs nanowires but can be used for other nonlinear optical nanostructures.
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Affiliation(s)
- Maria Timofeeva
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland
- ITMO University , Kronverkskiy 49, 197101 Saint Petersburg, Russia
| | - Alexei Bouravleuv
- St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia
- Ioffe Institute , Politekhnicheskaya 29, 194021 Saint Petersburg, Russia
| | - George Cirlin
- St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia
- ITMO University , Kronverkskiy 49, 197101 Saint Petersburg, Russia
- Ioffe Institute , Politekhnicheskaya 29, 194021 Saint Petersburg, Russia
| | - Igor Shtrom
- St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia
- Ioffe Institute , Politekhnicheskaya 29, 194021 Saint Petersburg, Russia
| | - Ilya Soshnikov
- St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia
- Ioffe Institute , Politekhnicheskaya 29, 194021 Saint Petersburg, Russia
| | - Marc Reig Escalé
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland
| | - Anton Sergeyev
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland
| | - Rachel Grange
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland
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21
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Mante PA, Lehmann S, Anttu N, Dick KA, Yartsev A. Nondestructive Complete Mechanical Characterization of Zinc Blende and Wurtzite GaAs Nanowires Using Time-Resolved Pump-Probe Spectroscopy. NANO LETTERS 2016; 16:4792-4798. [PMID: 27352041 DOI: 10.1021/acs.nanolett.6b00786] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We have developed and demonstrated an experimental method, based on the picosecond acoustics technique, to perform nondestructive complete mechanical characterization of nanowires, that is, the determination of the complete elasticity tensor. By means of femtosecond pump-probe spectroscopy, coherent acoustic phonons were generated in an ensemble of nanowires and their dynamics was resolved. Specific phonon modes were identified and the detection mechanism was addressed via wavelength dependent experiments. We calculated the exact phonon dispersion relation of the nanowires by fitting the experimentally observed frequencies, thus allowing the extraction of the complete elasticity tensor. The elasticity tensor and the nanowire diameter were determined for zinc blende GaAs nanowires and were found to be in a good agreement with literature data and independent measurements. Finally, we have applied this technique to characterize wurtzite GaAs nanowires, a metastable phase in bulk, for which no experimental values of elastic constants are currently available. Our results agree well with previous first principle calculations. The proposed approach to the complete and nondestructive mechanical characterization of nanowires will allow the efficient mechanical study of new crystal phases emerging in nanostructures, as well as size-dependent properties of nanostructured materials.
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Affiliation(s)
- Pierre-Adrien Mante
- Department of Chemical Physics, ‡NanoLund, §Department of Solid State Physics, and ∥Center for Analysis and Synthesis, Lund University , S-221 00 Lund, Sweden
| | - Sebastian Lehmann
- Department of Chemical Physics, ‡NanoLund, §Department of Solid State Physics, and ∥Center for Analysis and Synthesis, Lund University , S-221 00 Lund, Sweden
| | - Nicklas Anttu
- Department of Chemical Physics, ‡NanoLund, §Department of Solid State Physics, and ∥Center for Analysis and Synthesis, Lund University , S-221 00 Lund, Sweden
| | - Kimberly A Dick
- Department of Chemical Physics, ‡NanoLund, §Department of Solid State Physics, and ∥Center for Analysis and Synthesis, Lund University , S-221 00 Lund, Sweden
| | - Arkady Yartsev
- Department of Chemical Physics, ‡NanoLund, §Department of Solid State Physics, and ∥Center for Analysis and Synthesis, Lund University , S-221 00 Lund, Sweden
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22
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Vainorius N, Lehmann S, Gustafsson A, Samuelson L, Dick KA, Pistol ME. Wurtzite GaAs Quantum Wires: One-Dimensional Subband Formation. NANO LETTERS 2016; 16:2774-2780. [PMID: 27004550 DOI: 10.1021/acs.nanolett.6b00482] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
It is of contemporary interest to fabricate nanowires having quantum confinement and one-dimensional subband formation. This is due to a host of applications, for example, in optical devices, and in quantum optics. We have here fabricated and optically investigated narrow, down to 10 nm diameter, wurtzite GaAs nanowires which show strong quantum confinement and the formation of one-dimensional subbands. The fabrication was bottom up and in one step using the vapor-liquid-solid growth mechanism. Combining photoluminescence excitation spectroscopy with transmission electron microscopy on the same individual nanowires, we were able to extract the effective masses of the electrons in the two lowest conduction bands as well as the effective masses of the holes in the two highest valence bands. Our results, combined with earlier demonstrations of thin crystal phase nanodots in GaAs, set the stage for the fabrication of crystal phase quantum dots having full three-dimensional confinement.
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Affiliation(s)
- Neimantas Vainorius
- Solid State Physics and NanoLund, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
| | - Sebastian Lehmann
- Solid State Physics and NanoLund, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
| | | | - Lars Samuelson
- Solid State Physics and NanoLund, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
| | - Kimberly A Dick
- Solid State Physics and NanoLund, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
- Centre for Analysis and Synthesis, Lund University , P.O. Box 124, SE-221 00 Lund, Sweden
| | - Mats-Erik Pistol
- Solid State Physics and NanoLund, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
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23
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Interface dynamics and crystal phase switching in GaAs nanowires. Nature 2016; 531:317-22. [PMID: 26983538 PMCID: PMC4876924 DOI: 10.1038/nature17148] [Citation(s) in RCA: 146] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2015] [Accepted: 01/06/2016] [Indexed: 02/07/2023]
Abstract
Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically-grown nanowires provide an ideal system for studying the fundamental physics of phase selection, while also offering the potential for novel electronic applications based on crystal polytype engineering. Here we image GaAs nanowires during growth as they are switched between polytypes by varying growth conditions. We find striking differences between the growth dynamics of the polytypes, including differences in interface morphology, step flow, and catalyst geometry. We explain the differences, and the phase selection, through a model that relates the catalyst volume, contact angle at the trijunction, and nucleation site of each new layer. This allows us to predict the conditions under which each phase should be preferred, and use these predictions to design GaAs heterostructures. We suggest that these results may apply to phase selection in other nanowire systems.
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Gorji Ghalamestani S, Lehmann S, Dick KA. Can antimonide-based nanowires form wurtzite crystal structure? NANOSCALE 2016; 8:2778-2786. [PMID: 26763161 DOI: 10.1039/c5nr07362f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The epitaxial growth of antimonide-based nanowires has become an attractive subject due to their interesting properties required for various applications such as long-wavelength IR detectors. The studies conducted on antimonide-based nanowires indicate that they preferentially crystallize in the zinc blende (ZB) crystal structure rather than wurtzite (WZ), which is common in other III-V nanowire materials. Also, with the addition of small amounts of antimony to arsenide- and phosphide-based nanowires grown under conditions otherwise leading to WZ structure, the crystal structure of the resulting ternary nanowires favors the ZB phase. Therefore, the formation of antimonide-based nanowires with the WZ phase presents fundamental challenges and is yet to be explored, but is particularly interesting for understanding the nanowire crystal phase in general. In this study, we examine the formation of Au-seeded InSb and GaSb nanowires under various growth conditions using metalorganic vapor phase epitaxy. We address the possibility of forming other phases than ZB such as WZ and 4H in binary nanowires and demonstrate the controlled formation of WZ InSb nanowires. We further discuss the fundamental aspects of WZ growth in Au-seeded antimonide-based nanowires.
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Affiliation(s)
| | - Sebastian Lehmann
- Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden.
| | - Kimberly A Dick
- Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden. and Polymer and Materials Chemistry, Lund University, Box 124, SE-22100 Lund, Sweden
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Assali S, Gagliano L, Oliveira DS, Verheijen MA, Plissard SR, Feiner LF, Bakkers EPAM. Exploring Crystal Phase Switching in GaP Nanowires. NANO LETTERS 2015; 15:8062-8069. [PMID: 26539748 DOI: 10.1021/acs.nanolett.5b03484] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The growth of wurtzite/zincblende (WZ and ZB, respectively) superstructures opens new avenues for band structure engineering and holds the promise of digitally controlling the energy spectrum of quantum confined systems. Here, we study growth kinetics of pure and thus defect-free WZ/ZB homostructures in GaP nanowires with the aim to obtain monolayer control of the ZB and WZ segment lengths. We find that the Ga concentration and the supersaturation in the catalyst particle are the key parameters determining growth kinetics. These parameters can be tuned by the gallium partial pressure and the temperature. The formation of WZ and ZB can be understood with a model based on nucleation either at the triple phase line for the WZ phase or in the center of the solid-liquid interface for the ZB phase. Furthermore, the observed delay/offset time needed to induce WZ and ZB growth after growth of the other phase can be explained within this framework.
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Affiliation(s)
- S Assali
- Department of Applied Physics Eindhoven, University of Technology , 5600 MB Eindhoven, The Netherlands
| | - L Gagliano
- Department of Applied Physics Eindhoven, University of Technology , 5600 MB Eindhoven, The Netherlands
| | - D S Oliveira
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, UNICAMP , 13083-859 Campinas, São Paulo, Brazil
| | - M A Verheijen
- Department of Applied Physics Eindhoven, University of Technology , 5600 MB Eindhoven, The Netherlands
- Philips Innovation Services Eindhoven , High Tech Campus 11, 5656AE Eindhoven, The Netherlands
| | - S R Plissard
- CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, F-31400 Toulouse, France
| | - L F Feiner
- Department of Applied Physics Eindhoven, University of Technology , 5600 MB Eindhoven, The Netherlands
| | - E P A M Bakkers
- Department of Applied Physics Eindhoven, University of Technology , 5600 MB Eindhoven, The Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology , 2600 GA Delft, The Netherlands
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