Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices

Enhanced Photodetection Performance of WSe2/V2O5 Nanocomposite on Flexible Substrate: Synergistic Advantages and Improved Efficiency

The two-dimensional (2D) chalcogenide WSe2/V2O5 composite nanostructures were synthesized using the hydrothermal method and extensively characterized with various spectroscopic techniques. X-ray diffraction analysis confirmed the hexagonal crystal structure exhibiting space symmetry of P63/mmc. Scanning electron microscopy images provided insights into the irregular and nonuniform morphology. Optical spectrum analysis indicated a band gap value of 2.01 eV for 15% WSe2/V2O5 nanostructures, as determined by the Wood and Tauc equation. Photoluminescence (PL) excitation spectra at emission wavelengths of 550 and 750 nm exhibited broad emission attributed to self-trapped excitons for V2O5 and WSe2 nanostructures. Under excitation at λexc = 365 nm, PL emission spectra displayed distinct peaks at 550 and 750 nm, demonstrating the ability to emit vivid red light. A device optimized for photoresponsivity (R) of approximately 7.80 × 10-1 A W-1 and detectivity (D) of around 8.65 × 1011 Jones, and quantum efficiency of approximately 3.42 × 10-2 A W-1 were achieved at a wavelength of 390 nm while using a lamination sheet as a substrate. These findings underscore the capability of devices for efficient photoconversion at specified wavelengths, indicating potential applications in sensing, imaging, and optical communication. The photoresponsivity of the device remained stable at 3.38 × 10-3 A W-1 at 0° and 3.09 × 10-3 A W-1 at 55° bending angle. This indicates the resilience of device to mechanical strain, making it ideal for flexible and wearable sensor applications. The structural, morphological, and optical characterizations confirm the suitability of luminescent WSe2/V2O5 chalcogenide for practical optoelectronic applications, especially in display technologies.

Controlled growth of asymmetric chiral TeOx for broad-spectrum, high-responsivity and polarization-sensitive photodetection

Low-dimensional nanostructures, especially one-dimensional materials, exhibit remarkable anisotropic characteristics due to their low symmetry, making them promising candidates for polarization-sensitive photodetection. Here, we present a chemical vapor deposition synthesis method for tellurium suboxide (TeOx), confirming the practicality of photodetectors constructed from TeOx nanowires (NWs) in high-responsivity, broadband, and polarization-sensitive detection. By precisely controlling the thermodynamics and kinetics of TeOx NWs growth, we achieve large-scale growth of TeOx NWs with highly controllable dimensions and propose a method to induce intrinsic built-in strain in TeOx NWs. Photodetectors based on quasi-one-dimensional TeOx NWs with ohmic contact demonstrate broadband spectral response (638-1550 nm), high responsivity (13 700 mA·W-1), and superior air stability. Particularly, owing to the inherent structural anisotropy of the photodetectors, they exhibit polarization-sensitive photodetection, with anisotropy ratios of 1.70 and 1.71 at 638 and 808 nm, respectively.

A Flexible and Wearable Photodetector Enabling Ultra-Broadband Imaging from Ultraviolet to Millimeter-Wave Regimes

Flexible and miniaturized photodetectors, offering a fast response across the ultraviolet (UV) to millimeter (MM) wave spectrum, are crucial for applications like healthcare monitoring and wearable optoelectronics. Despite their potential, developing such photodetectors faces challenges due to the lack of suitable materials and operational mechanisms. Here, the study proposes a flexible photodetector composed of a monolayer graphene connected by two distinct metal electrodes. Through the photothermoelectric effect, these asymmetric electrodes induce electron flow within the graphene channel upon electromagnetic wave illumination, resulting in a compact device with ultra-broadband and rapid photoresponse. The devices, with footprints ranging from 3 × 20 µm2 to 50 × 20 µm2, operate across a spectrum from 325 nm (UV) to 1.19 mm (MM) wave. They demonstrate a responsivity (RV) of up to 396.4 ± 5.1 mV W-1, a noise-equivalent power (NEP) of 8.6 ± 0.1 nW Hz- 0.5, and a response time as small as 0.8 ± 0.1 ms. This device facilitates direct imaging of shielded objects and material differentiation under simulated human body-wearing conditions. The straightforward device architecture, aligned with its ultra-broadband operational frequency range, is anticipated to hold significant implications for the development of miniaturized, wearable, and portable photodetectors.

Recent Advances on Pulsed Laser Deposition of Large-Scale Thin Films

2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next-generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large-scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer-scale growth of 2D films, owing to target-maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h-BN, MoS2, BP, oxide, perovskite, semi-metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.

Hydrothermal Synthesis and Characterization of WSe2 Nanosheets: A Promising Approach for Wearable Photodetector Applications

The two-dimensional (2D) WSe2 nanostructure was successfully synthesized via the hydrothermal method and subjected to comprehensive characterization using various spectroscopic techniques. X-ray diffraction (XRD) analysis confirmed the formation of nanosheets with a hexagonal crystal structure having a space symmetry of P63/mmc. Scanning electron microscopy (SEM) images showed irregular and nonuniform morphology. The size of the 2D nanosheets was determined using transmission electron microscopy (TEM) providing insights intotheir physical characteristics. The optical spectrum analysis yielded a discernible band gap value of 2.1 eV, as determined by the Tauc equation. Photoluminescence (PL) spectra display an emission at a wavelength of 610 nm, showing a broad emission associated with self-trapped excitons. Under excitation at λexc = 360 nm, PL emission spectra displayed a distinct peak at 610 nm, demonstrating the ability of the nanostructure to emit vivid red light. Photometric analysis underscored the potential of this nanostructure as a prominent red-light source for diverse display applications. The optimized photodetection performance of a device showcases a photoresponsivity of approximately 1.25 × 10-3 AW-1 and a detectivity of around 5.19 × 108 Jones at a wavelength of 390 nm. Additionally, the quantum efficiency is reported to be approximately 6.99 × 10-3 at a wavelength of 635 nm. These findings highlight the capability of the device for efficient photoconversion at specified wavelengths, indicating potential applications in sensing, imaging, and optical communication. The combination of structural, morphological, and optical characterizations highlights the suitability of 2D WSe2 nanostructure for practical optoelectronic applications, particularly in display technologies.

Characterization of 2D Transition Metal Dichalcogenides Through Anisotropic Exciton Behaviors

This study reports the first attempt to characterize the quality, defects, and strain of as-grown monolayer transition metal dichalcogenide (TMDC)-based 2D materials through exciton anisotropy. A standard ellipsometric parameter (Ψ) to observe anisotropic exciton behavior in monolayer 2D materials is used. According to the strong exciton effect from phonon-electron coupling processes, the change in the exciton in the Van Hove singularity is sensitive to lattice distortions such as defects and strain. In comparison with Raman spectroscopy, the variations in exciton anisotropy in Ψ are more sensitive for detecting slight changes in the quality and strain of monolayer TMDC films. Moreover, the optical power requirement for TMDC characterization through exciton anisotropy in Ψ is ≈10-5 mW cm-2, which is significantly less than that of Raman spectroscopy (≈106 mW cm-2). The standard deviation of the signals varies with strain (defects) in Raman spectra and exciton anisotropies in Ψ are 0.700 (0.795) and 0.033 (0.073), indicating that exciton anisotropy is more sensitive to slight changes in the quality of monolayer TMDC films.

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe2 heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers. Capitalizing on these features, the device exhibits exceptional photodetection performance, including a responsivity of 28 800 A/W, specific detectivity of 7.1 × 1014 Jones, light on/off ratio of 1.2 × 106, and rise/fall time of 112.4/426.8 μs. Moreover, high-resolution imaging under various wavelengths is successfully demonstrated using this device. Additionally, we showcase the generality of this device design by activating the photosensitive potential of 2D GaSe with other transition metal dichalcogenides (TMDCs) such as WSe2, WS2, and MoS2. This work provides inspiration for future development in high-performance photodetectors, shining a spotlight on the potential of 2D GaSe and its heterostructure.

Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials

Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.

Multilayer WS2 for low-power visible and near-infrared phototransistors

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.

Flexible light-stimulated artificial synapse based on detached (In,Ga)N thin film for neuromorphic computing

Because of wide range of applications, the flexible artificial synapse is an indispensable part for next-generation neural morphology computing. In this work, we demonstrate a flexible synaptic device based on a lift-off (In,Ga)N thin film successfully. The synaptic device can mimic the learning, forgetting, and relearning functions of biological synapses at both flat and bent states. Furthermore, the synaptic device can simulate the transition from short-term memory to long-term memory successfully under different bending conditions. With the high flexibility, the excitatory post-synaptic current of the bent device only shows a slight decrease, leading to the high stability. Based on the experimental conductance for long-term potentiation and depression, the simulated three-layer neural network can achieve a high recognition rate up to 90.2%, indicating that the system comprising of flexible synaptic devices could have a strong learning-memory capability. Therefore, this work has a great potential for the development of wearable intelligence devices and flexible neuromorphic systems.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Ultrahigh Photosensitivity Based on Single-Step Lay-on Integration of Freestanding Two-Dimensional Transition-Metal Dichalcogenide

Two-dimensional transition-metal dichalcogenides have attracted significant attention because of their unique intrinsic properties, such as high transparency, good flexibility, atomically thin structure, and predictable electron transport. However, the current state of device performance in monolayer transition-metal dichalcogenide-based optoelectronics is far from commercialization, because of its substantial strain on the heterogeneous planar substrate and its robust metal deposition, which causes crystalline damage. In this study, we show that strain-relaxed and undamaged monolayer WSe2 can improve a device performance significantly. We propose here an original point-cell-type photodetector. The device consists in a monolayer of an absorbing TMD (i.e., WSe2) simply deposited on a structured electrode, i.e., core-shell silicon-gold nanopillars. The maximum photoresponsivity of the device is found to be 23.16 A/W, which is a significantly high value for monolayer WSe2-based photodetectors. Such point-cell photodetectors can resolve the critical issues of 2D materials, leading to tremendous improvements in device performance.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Scalable Fabrication of High-Performance Self-Powered a-MoSe2 Thin-Film-Based Photodetectors on a-SiO2/Si Substrates

Owing to its high stability, suitable absorption band gap, and fast response time, MoSe2 has attracted the most attention in transition-metal dichalcogenides (TMDCs) for photodetector (PD) applications. In this study, based on centimeter-scale smooth amorphous MoSe2 (a-MoSe2) thin films with thicknesses varying from 6.5 to 62.5 nm on a-SiO2/Si substrates prepared by polymer-assisted deposition, metal-semiconductor-metal-structured self-powered a-MoSe2 PDs are designed and fabricated. Our data show that the PD based on 9.5 nm thick a-MoSe2 thin film exhibits the highest values of photocurrent (Iph, 4.60 μA), photo-to-dark current ratio (PDCR, 3067), photoresponsivity (Rλ, 0.94 mA/W), and detectivity (D*, 4.29 × 1010 Jones), as well as the lowest values of noise-equivalent power (NEP, 2.33 × 10-11 W/Hz1/2) and photoresponse rise/decay time (61/58 ms) under a 405 nm laser with 5 mW power at zero bias, which are better than or comparable with those of previously reported PDs based on crystalline MoSe2 monolayers or other atomically thin 2D materials under bias voltage. The high-performance mechanism can be explained in terms of the energy band theory and volume modulation photoconductive gain model in a-MoSe2 with a spontaneous built-in electric field. Our work provides a scalable low-cost way for the design and fabrication of high-performance self-powered TMDC PDs.

Broadband, Polarization-Sensitive, and Self-Powered High-Performance Photodetection of Hetero-Integrated MoS2 on Lithium Niobate

High-performance photodetectors hold promising potential in optical communication and imaging systems. However, conventional counterparts are suffering narrow detection range, high power consumption, and poor polarization sensitivity. Characteristics originating from switchable polarization in ferroelectrics can be used to optimize the photo-to-electric procedure and improve the photodetection performance. In this regard, we constructed a configuration by integrating 2-dimensional molybdenum disulfide (MoS₂) with ferroelectric lithium niobate (LiNbO₃), resulting in the MoS₂/LiNbO₃ heterostructured photodetector. Benefiting from the pyroelectric effect of LiNbO₃, the limitation of bandgap on the detection range can be broken, thus broadening the response band of the detector to 365 to 1,064 nm, as well as enabling the self-powered characteristic. Meanwhile, high carrier mobility and decent light absorbance of MoS₂ introduce robust light-matter interactions with the underlying LiNbO₃, leading to ultrafast rise/fall times of ≈150 μs/250 μs and switching ratios of up to ≈190. Moreover, the highest responsivity, specific detectivity, and external quantum efficiency achieved were 17.3 A·W^-1, 4.3 × 10¹¹ Jones, and 4,645.78%, respectively. Furthermore, because of the anisotropy of the spontaneous-polarized LiNbO₃ substrate, the photocurrent of the device achieved a dichroic ratio of 7.42, comparing favorably to most MoS₂-based photodetectors. This work demonstrates the integration potential between ferroelectric LiNbO₃ and 2-dimensional materials for high-performance photodetection.

Visible Near-Infrared Photodetection Based on Ta2NiSe5/WSe2 van der Waals Heterostructures

The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta₂NiSe₅/WSe₂, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (~3.6 pA), with rise and fall times of 278 μs and 283 μs for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection.

Valley-optical absorption in planar transition metal dichalcogenide superlattices

In this study, we investigate the optical absorption of a planar superlattice comprising alternatively arranged two-dimensional Transition Metal DiChalcogenide semiconductors. Within a semi-classical model and using the Dirac-like equation in the presence of light interaction as a perturbation, we obtained the governing Hamiltonian. Using this Hamiltonian, we derived a fully analytical relationship for the absorption coefficient of the structure. By calculating the effective mass for different bands and using the Drude-Lorentz model, our approach is able to determine the oscillator strength and the effective refractive index of the structure. We found that the spin-orbit coupling has important effect on the absorption coefficient and energy bands where it reduces the absorption coefficient of the structure from typical value of [Formula: see text]-[Formula: see text], also the valence band experiences a significant blue shift, while the conduction band shows minor changes due to spin orbit coupling. Moreover, the role of incident light angle and light polarization were studied in details at different valleys of [Formula: see text] and [Formula: see text]. The most important finding is that by changing the polarization of incident light, it is possible to increase the absorption coefficients of [Formula: see text] and [Formula: see text] valleys by up to 30 times. For light propagation direction close to perpendicular to the plane of the superlattice, the right-circular polarization is absorbed only by [Formula: see text] valley in contrast to the left-circular polarization, which is absorbed by the [Formula: see text] valley. Our model might be used to design newly developed 2D optovalleytronic devices.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Toward a Comprehensive Understanding of Amorphous Photocatalysts: Fundamental Hypotheses and Applications in CO2 Photoreduction

In principle, photocatalytic activity can be precisely controlled with crystalline catalysts. However, an amorphous photocatalyst could be a viable candidate for CO₂ photoreduction to form value-added products. The amorphous phase is currently part of the crystalline material in several ongoing CO₂ photoreduction studies. Additionally, no study indicates the amorphous material required for overall CO₂ photoreduction. This perspective review article highlights fundamental assumptions that are necessary to gain insights and understand the effectiveness of amorphous photocatalysts for CO₂ photoreduction. We start with basic ideas and theories about these materials, including light harvesting, variable coordination number, and the interaction of CO₂ molecules with the amorphous catalytic surface. To understand the prospects of the amorphous photocatalyst, we explore machine learning with EXAFS. Furthermore, we discuss product selectivity and regeneration of photocatalysts in detail. Finally, we briefly review the work in progress on amorphous materials and compare it to that on crystalline ones.

Molybdenum Diselenide and Tungsten Diselenide Interfacing Cobalt-Porphyrin for Electrocatalytic Hydrogen Evolution in Alkaline and Acidic Media

Easy and effective modification approaches for transition metal dichalcogenides are highly desired in order to make them active toward electrocatalysis. In this manner, we report functionalized molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2) via metal-ligand coordination with pyridine rings for the subsequent covalent grafting of a cobalt-porphyrin. The new hybrid materials were tested towards an electrocatalytic hydrogen evolution reaction in both acidic and alkaline media and showed enhanced activity compared to intact MoSe2 and WSe2. Hybrids exhibited lower overpotential, easier reaction kinetics, higher conductivity, and excellent stability after 10,000 ongoing cycles in acidic and alkaline electrolytes compared to MoSe2 and WSe2. Markedly, MoSe2-based hybrid material showed the best performance and marked a significantly low onset potential of -0.17 V vs RHE for acidic hydrogen evolution reaction. All in all, the ease and fast modification route provides a versatile functionalization procedure, extendable to other transition metal dichalcogenides, and can open new pathways for the realization of functional nanomaterials suitable in electrocatalysis.

Rational Design of WSe2 /WS2 /WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity

The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next-generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure-based photodetectors have been developed, the unavoidable trade-off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe₂ /WS₂ /WSe₂ dual-vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of -15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 10¹⁴  Jones, high responsivity of 35.4 A W^-1 , and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 µW cm^-2 . Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.

Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

First-principles calculations of bulk WX2(X = Se, Te) as anode materials for Na ion battery

Two-dimensional transition metal dichalcogenides are promising anode materials for Na ion batteries (NIBs). In this study, we carried out a comprehensive investigation to analyze the structural, electrochemical characteristics, and diffusion kinetics of bulk WX₂(X = Se, Te) by employing first-principles calculation in the framework of density functional theory. We deeply studied the full intercalation of Na⁺in WX₂and diagnosed Na_yX phase through conversion reaction mechanism. The voltage range of 2.05-0.48 V vs Na/Na⁺for Na_yWSe₂and 2.26-0.65 V for Na_yWTe₂(y= 0-3) have been noted. Density of states analysis showed metallic behavior of WX₂(X = Se, Te) during sodiation. The facile pathways for Na⁺mobility through WX₂have shown that tungsten dichalcogenides are inferred as excellent electrode material for NIBs.

Development of Mode-Switchable Touch Sensor Using MWCNT Composite Conductive Nonwoven Fabric

Among the various wearable electronic devices, textile-based piezo sensors have emerged as the most attractive sensors for practical application. In this study, a conductive nonwoven fabric is fabricated to develop a textile-based piezo sensor. This high-performance fabric is fabricated by depositing multiwalled carbon nanotubes (MWCNTs) on cellulose nonwoven composites with carbon fibers (CNwCa) through a spray process to assign conductivity, followed by electrospinning thermoplastic polyurethane (TPU) on the MWCNT-coated CNwCa to improve surface durability. Each component is optimized through experiments to control the electrical and physical characteristics of the conductive nonwoven fabric. The static and dynamic piezoresistive properties of the fabricated MWCNT composite conductive nonwoven are measured using a source meter and the fabricated sensor driving circuitry. In addition, a prototype bag with a touch sensor is developed using the fabricated conductive nonwoven fabric and its touchpad function is demonstrated using an Android application. The operation as a mode-switchable touch sensor was experimentally verified by inserting the sensor into a bag so that it can be used without direct manipulation on a mobile device. The findings of this study suggest that the developed flexible textile-based conductive nonwoven fabric can be effectively used in wearable devices with piezoresistive sensors.

Quantum emitters and detectors based on 2D van der Waals materials

Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2film using a new one-step strategy

Two-dimensional (2D) materials attached with flexible substrates enable possibilities to apply their superior properties to the rapidly increasing demand for foldable displays and wearable biosensors in the internet-of-things technology. However, previous two-step strategy to construct the flexible devices, namely first obtaining 2D materials elsewhere and then transferring them onto flexible substrates, can cause huge problems, including irreversibly undermining the device performance and limiting the material size. Here we propose a new one-step strategy (other than the liquid phase processing and low temperature synthesis methods), namely directly depositing appropriate 2D materials onto flexible substrates, which involves no transferring and can maintain the crystal quality and properties to the greatest extent. More importantly, this strategy in principle has no limit in the film size, hence removing a main obstacle for the practical use of flexible films, such as complex logic operations and large-area optoelectronic applications. Using this strategy, a centimeter-scale SnSe₂film is directly grown on polydimethylsiloxane, which is characterized as a uniform, out-of-plane oriented and semiconducting film that is robust to deformations. Based on the film, a flexible photodetector is fabricated and distinct photoresponse to a broad spectrum of light (405-830 nm) is observed, with remarkable technical parameters.

Application of Pulsed Laser Deposition in the Preparation of a Promising MoSx/WSe2/C(В) Photocathode for Photo-Assisted Electrochemical Hydrogen Evolution

We studied the possibility of using pulsed laser deposition (PLD) for the formation of a MoS_x/WSe2 heterostructure on a dielectric substrate. The heterostructure can be employed for effective solar water splitting to produce hydrogen. The sapphire substrate with the conducting C(B) film (rear contact) helped increase the formation temperature of the WSe₂ film to obtain the film consisting of 2H-WSe₂ near-perfect nanocrystals. The WSe₂ film was obtained by off-axis PLD in Ar gas. The laser plume from a WSe₂ target was directed along the substrate surface. The preferential scattering of selenium on Ar molecules contributed to the effective saturation of the WSe₂ film with chalcogen. Nano-structural WSe₂ film were coated by reactive PLD with a nanofilm of catalytically active amorphous MoS_x~4. It was established that the mutual arrangement of energy bands in the WSe₂ and MoS_x~4 films facilitated the separation of electrons and holes at the interface and electrons moved to the catalytically active MoS_x~4. The current density during light-assisted hydrogen evolution was above ~3 mA/cm² (at zero potential), whilst the onset potential reached 400 mV under irradiation with an intensity of 100 mW/cm² in an acidic solution. Factors that may affect the HER performance of MoS_x~4/WSe₂/C(В) structure are discussed.

Ultra-wideband self-powered photodetector based on suspended reduced graphene oxide with asymmetric metal contacts

The ultraviolet to terahertz band forms the main focus of optoelectronics research, while light detection in different bands generally requires the use of different materials and processing methods. However, researchers are aiming to realize multi-band detection simultaneously in the same device in certain specific application scenarios and ultra-wideband photoelectric detectors can also realize multi-function and multi-system integration. Therefore, the research and development work on ultra-wideband photoelectric detectors has important practical application value. Here, we produced self-powered suspended Pd-reduced graphene oxide-Ti (Pd-rGO-Ti) photodetectors. We varied the properties of the rGO films by using different annealing temperatures and achieved p-doping and n-doping of the films by evaporating palladium films and titanium films, respectively, thus enabling preparation of photothermoelectric (PTE) photodetectors based on rGO films. The resulting detectors have excellent photoelectric responses over a wideband illumination wavelength range from 375 nm to 118.8 μm (2.52 THz). At the same time, we determined the best experimental conditions and device structure by varying the channel width, the laser spot irradiation position and the experimental atmospheric pressure. The maximum responsivity obtained from our detectors is 142.08 mV W-1, the response time is approximately 100-200 ms and the devices have high detection sensitivity. Based on this work, we assumed in the subsequent experiments that detectors with higher performance can be obtained by reducing the channel width and atmospheric pressure. With advantages that include simple fabrication, low cost, large-scale production potential and ultra-wideband responses, these Pd-rGO-Ti photodetectors have broad application prospects in high-performance integrated optoelectronics.

Recent Progress of Flexible Image Sensors for Biomedical Applications

Flexible image sensors have attracted increasing attention as new imaging devices owing to their lightness, softness, and bendability. Since light can measure inside information from outside of the body, optical-imaging-based approaches, such as X-rays, are widely used for disease diagnosis in hospitals. Unlike conventional sensors, flexible image sensors are soft and can be directly attached to a curved surface, such as the skin, for continuous measurement of biometric information with high accuracy. Therefore, they are expected to gain wide application to wearable devices, as well as home medical care. Herein, the application of such sensors to the biomedical field is introduced. First, their individual components, photosensors, and switching elements, are explained. Then, the basic parameters used to evaluate the performance of each of these elements and the image sensors are described. Finally, examples of measuring the dynamic and static biometric information using flexible image sensors, together with relevant real-world measurement cases, are presented. Furthermore, recent applications of the flexible image sensors in the biomedical field are introduced.

Neural network based 3D tracking with a graphene transparent focal stack imaging system

Recent years have seen the rapid growth of new approaches to optical imaging, with an emphasis on extracting three-dimensional (3D) information from what is normally a two-dimensional (2D) image capture. Perhaps most importantly, the rise of computational imaging enables both new physical layouts of optical components and new algorithms to be implemented. This paper concerns the convergence of two advances: the development of a transparent focal stack imaging system using graphene photodetector arrays, and the rapid expansion of the capabilities of machine learning including the development of powerful neural networks. This paper demonstrates 3D tracking of point-like objects with multilayer feedforward neural networks and the extension to tracking positions of multi-point objects. Computer simulations further demonstrate how this optical system can track extended objects in 3D, highlighting the promise of combining nanophotonic devices, new optical system designs, and machine learning for new frontiers in 3D imaging.

Transparent photodetectors based on graphene stacked vertically along the optical axis have shown promising potential for light field reconstruction. Here, the authors develop transparent photodetector arrays and implement a neural network for real-time 3D optical imaging and object tracking.

Flexible electrochemical biosensors for healthcare monitoring

As the interest in wearable devices has increased recently, increasing biosensor flexibility has begun to attract considerable attention. Among the various types of biosensors, electrochemical biosensors are uniquely suited for the development of such flexible biosensors due to their many advantages, including their fast response, inherent miniaturization, convenient operation, and portability. Therefore, many studies on flexible electrochemical biosensors have been conducted in recent years to achieve non-invasive and real-time monitoring of body fluids such as tears, sweat, and saliva. To achieve this, various substrates, novel nanomaterials, and detection techniques have been utilized to develop conductive flexible platforms that can be applied to create flexible electrochemical biosensors. In this review, we discussed recently reported flexible electrochemical biosensors and divided them into specific categories including materials for flexible substrate, fabrication techniques for flexible biosensor development, and recently developed flexible electrochemical biosensors to externally monitor target molecules, thereby providing a means to noninvasively examine cells and body fluid samples. In conclusion, this review will discuss the materials, methods, recent studies, and perspectives on flexible electrochemical biosensors for healthcare monitoring and wearable biosensing systems.

Ultra-flexible and rollable 2D-MoS2/Si heterojunction-based near-infrared photodetector via direct synthesis

Atomic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for application in various optoelectronic devices such as image sensors, biomedical imaging systems, and consumer electronics and in diverse spectroscopic analyses. However, a complicated fabrication process, involving transfer and alignment of as-synthesized 2D layers onto flexible target substrates, hinders the development of flexible high-performance heterojunction-based photodetectors. Herein, an ultra-flexible 2D-MoS2/Si heterojunction-based photodetector is successfully fabricated through atmospheric-pressure plasma enhanced chemical vapor deposition, which enables the direct deposition of multi-layered MoS2 onto a flexible Si substrate at low temperature (<200 °C). The photodetector is responsive to near infrared light (λ = 850 nm), showing responsivity of 10.07 mA W-1 and specific detectivity (D*) of 4.53 × 1010 Jones. The measured photocurrent as a function of light intensity exhibits good linearity with a power law exponent of 0.84, indicating negligible trapping/de-trapping of photo-generated carriers at the heterojunction interface, which facilitates photocarrier collection. Furthermore, the photodetectors can be bent with a small bending radius (5 mm) and wrapped around a glass rod, showing excellent photoresponsivity under various bending radii. Hence, the device exhibits excellent flexibility, rollability, and durability under harsh bending conditions. This photodetector has significant potential for use in next-generation flexible and patchable optoelectronic devices.

Strain Engineering in 2D Material-Based Flexible Optoelectronics

Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.

Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS₂) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS₂/p-Si heterojunction structure by sulfurization of MoO_x film, which is thermally evaporated on p-type silicon substrate. The n-MoS₂/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 10⁴. Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 10¹¹ Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS₂ can be applicable to next-generation electronic and optoelectronic devices.

Two-Dimensional Molybdenum Diselenide Tuned by Bimetal Co/Ni Nanoparticles for Oxygen Evolution Reaction

Herein, we report fabrication of MoSe2 functionalized with bimetal Co/Ni particles, which shows promising electrochemical performance in oxygen and hydrogen evolution reactions (OER and HER) due to its physicochemical properties such as electronic configuration and great electrochemical stability. We propose functionalization with two transition metals, cobalt and nickel, expecting a synergic effect in electrocatalytic activity in a water splitting reaction. These electrocatalytic reactions are essential for efficient electrochemical energy storage. The thin flakes were obtained by exfoliation of bulk molybdenum diselenide. Next, after deposition of metals, precursors were carbonized. Electrochemical data reveal that the presence of Ni and Co particles boosts electrocatalyst performance, providing a great number of active sites due to their conductivity. Interestingly, the material exhibited great evolution potential and good stability in long-term tests.

Realizing Optoelectronic Devices from Crumpled Two-Dimensional Material Heterostructures

Due to their high in-plane stiffness and low flexural rigidity, two-dimensional (2D) materials are excellent candidates for engineering three-dimensional (3D) nanostructures using crumpling. An important new direction is to integrate 2D materials into crumpled heterostructures, which can have much more complex device geometries. Here, we demonstrate phototransistors from crumpled 2D heterostructures formed from graphene contacts to a monolayer transition-metal dichalcogenide (MoS₂, WSe₂) channel and quantify the membrane morphology and optoelectronic performance. First, we examined the morphology of folds in the heterostructure and constituent monolayers under uniaxial compression. The 2D membranes relieve the stress by delaminating from the substrate and creating nearly periodic folds whose spacing depends on the membrane type. The matched mechanical stiffness of the constituting layers allows the 2D heterostructure to maintain a conformal interface through large deformations. Next, we examined the optoelectronic performance of a biaxially crumpled graphene-WSe₂ phototransistor. Photoluminescence (PL) spectroscopy shows that the optical band gap of WSe₂ shifts by less than 2 meV between flat and 15% biaxial crumpling, corresponding to a change in strain of less than 0.05%. The photoresponsivity scaled as P^-0.38 and reached 20 A/W under an illumination power density of 4 μW/cm² at 20 V bias, a performance comparable to flat photosensors. Using photocurrent microscopy, we observe that the photoresponsivity increases by only 20% after crumpling. Both the PL and photoresponse confirm that crumpling and delamination prevent the buildup of compressive strain leading to highly deformed materials and devices with similar performance to their flat analogs. These results set a foundation for crumpled all-2D heterostructure devices and circuitry for flexible and stretchable electronic applications.

Two-dimensional electronic devices modulated by the activation of donor-like states in boron nitride

A two-dimensional (2D) layered material-based p-n diode is an essential element in the modern semiconductor industry for facilitating the miniaturization and structural flexibility of devices with high efficiency for future optoelectronic and electronic applications. Planar devices constructed previously required a complicated device structure using a photoresist, as they needed to consider non-abrupt interfaces. Here, we demonstrated a WSe₂ based lateral homojunction diode obtained by applying a photo-induced effect in BN/WSe₂ heterostructures upon illumination via visible and deep UV light, which represents a stable and flexible charge doping technique. We have discovered that with this technique, a field-effect transistor (FET) based on p-type WSe₂ is inverted to n-WSe₂ so that a high electron mobility is maintained in the h-BN/n-WSe₂ heterostructures. To confirm this hypothesis, we deduced the work function values of p-WSe₂ and n-WSe₂ FETs by conducting Kelvin probe force microscopy (KPFM) measurements, which revealed the decline of the Fermi level from 5.07 (p-WSe₂) to 4.21 eV (n-WSe₂). The contact potential difference (CPD) between doped and undoped junctions was found to be 165 meV. We employed ohmic metal contacts for the planar homojunction diode by utilizing an ionic liquid gate to achieve a diode rectification ratio up to ∼10⁵ with n = 1. An exceptional photovoltaic performance is also observed. The presence of a built-in potential in our devices leads to an open-circuit voltage (V_oc) and short-circuit current (I_sc) without an external electric field. This effective doping technique is promising to advance the concept of preparing future functional devices.

WSe2 Homojunction p-n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride

A single nanoflake lateral p-n diode (in-plane) based on a two-dimensional material can facilitate electronic architecture miniaturization. Here, a novel lateral homojunction p-n diode of a single WSe₂ nanoflake is fabricated by photoinduced doping via optical excitation of defect states in an h-BN nanoflake upon illumination. This lateral diode is fabricated using a mechanical exfoliation technique by stacking the WSe₂ nanoflake partially on the h-BN and Si substrates. The carrier type in the part of the WSe₂ film on the h-BN substrate is inverted and a built-in potential difference is formed, ranging from 5.0 to 4.50 eV, which is measured by Kelvin probe force microscopy. The contact potential difference across the junction of p-WSe₂ and n-WSe₂ is found to be ∼492 mV. The lateral diode shows an excellent rectification ratio, up to ∼3.9 × 10⁴, with an ideality factor of ∼1.1. A typical self-biased photovoltaic behavior is observed at the p-n junction upon the illumination of incident light, that is, a positive open-circuit voltage (V_oc) is generated, that is, voltage obtained (at I_ds = 0 V), and also a negative short-circuit current (I_sc) is generated, that is, current obtained (at V_ds = 0 V). The presence of built-in potential in the proposed homojunction diode establishes I_sc and V_oc upon illumination, which can be implemented for a self-powered photovoltaic system in future electronics. The proposed doping technique can be effectively applied to form planar homojunction devices without a photoresist for future electronic and optoelectronic applications.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

Ultrathin High-Quality SnTe Nanoplates for Fabricating Flexible Near-Infrared Photodetectors

This work demonstrates a controlled van der Waals growth of two-dimensional SnTe nanoplates on mica substrates and their applications in flexible near-infrared photodetectors. The growth of nonlayered rock-salt structured SnTe crystals into two-dimensional SnTe nanoplate structures is mainly caused by the two-dimensional nature of the mica surface, which also results in the ultrathin nanoplates obtained (3.6 nm, equivalent to 6 monolayers). Furthermore, it is found that the shape of the SnTe nanoplates can be well engineered by changing their growth temperature due to the competition between the surface energy of the {100} crystallographic plane and that of the {111} plane. As a result of the favorable physical properties of topological crystalline insulators such as metallic surface (high electron mobility) and narrow bandgap, near-infrared photodetectors based on single SnTe nanoplate with the thickness of 3.6 nm present excellent device performance with a responsivity of 698 mA/W, a specific detectivity of 3.89 × 10⁸ jones, and an external quantum efficiency of 88.5% under the illumination of a 980 nm laser at room temperature (300 K) without applying a gate voltage (V_g). Upon increasing the gate voltage from -30 to 30 V, the detector responsivity increases from 2.96 to 723 mA/W and the detector detectivity increases from 2.4 × 10⁶ to 5.3 × 10⁸ jones. Furthermore, upon increasing the thickness of SnTe nanoplate from 3.6 to 35 nm, the detector responsivity increases from 0.698 to 1.468 A/W. The device performance measured after bending for 300 times as well as after bending with different radii presents no obvious degradation, which exhibits the excellent flexibility of the SnTe nanoplate detectors. These results not only contribute to a deep understanding of the mechanisms of the van der Waals growth of nonlayered materials into two-dimensional structure but also demonstrate the immense potential of SnTe nanoplates to be used in flexible near-infrared detectors.

A first-principles study of electronic structure and photocatalytic performance of GaN-MX2 (M = Mo, W; X= S, Se) van der Waals heterostructures

Modeling novel van der Waals (vdW) heterostructures is an emerging field to achieve materials with exciting properties for various devices. In this paper, we report a theoretical investigation of GaN-MX2 (M = Mo, W; X= S, Se) van der Waals heterostructures by hybrid density functional theory calculations. Our results predicted that GaN-MoS2, GaN-MoSe2, GaN-WS2 and GaN-WSe2 van der Waals heterostructures are energetically stable. Furthermore, we find that GaN-MoS2, GaN-MoSe2 and GaN-WSe2 are direct semiconductors, whereas GaN-WS2 is an indirect band gap semiconductor. Type-II band alignment is observed through PBE, PBE + SOC and HSE calculations in all heterostructures, except GaN-WSe2 having type-I. The photocatalytic behavior of these systems, based on Bader charge analysis, work function and valence and conduction band edge potentials, shows that these heterostructures are energetically favorable for water splitting.

Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions

We investigate the development of gate-modulated tungsten diselenide (WSe₂)-based lateral pn-homojunctions for visible and near-infrared photodetector applications via an effective oxygen (O₂) plasma treatment. O₂ plasma acts to induce the p-type WSe₂ for the otherwise n-type WSe₂ by forming a tungsten oxide (WO_x) layer upon O₂ plasma treatment. The WSe₂ lateral pn-homojunctions displayed an enhanced photoresponse and resulted in open-circuit voltage (V_OC) and short-circuit current (I_SC) originating from the pn-junction formed after O₂ plasma treatment. We further notice that the amplitude of the photocurrent can be modulated by different gate biases. The fabricated WSe₂ pn-homojunctions exhibit greater photoresponse with photoresponsivities (ratio of the photocurrent and incident laser power) of 250 and 2000 mA/W, high external quantum efficiency values (%, total number of charge carriers generated for the number of incident photons on photodetectors) of 97 and 420%, and superior detectivity values (magnitude of detector sensitivity) of 7.7 × 10⁹ and 7.2 × 10¹⁰ Jones upon illumination with visible (520 nm) and near-infrared lasers (852 nm), respectively, at low bias (V_g = 0 V and V_d = 1 V) at room temperature, demonstrating very high-performance in the IR region superior to the contending two-dimensional material-based photonic devices. These superior optoelectronic properties are attributed to the junctions induced by O₂ plasma doping, which facilitate the effective carrier generation and separation of photocarriers with applied external drain bias upon strong light absorption.

Two-Dimensional Tellurium: Progress, Challenges, and Prospects

Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.

Large area few-layer TMD film growths and their applications

Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono- and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.

Thermal Localization Enhanced Fast Photothermoelectric Response in a Quasi-One-Dimensional Flexible NbS3 Photodetector

Ultra-broadband photodetection is crucial for various applications like imaging and sensing and has become a hot research topic in recent years. However, most of the reported ultra-broadband photodetectors can only cover the range from ultraviolet to infrared, which is insufficient. Herein, a photothermoelectric (PTE) detector made of NbS₃ is reported. The device shows a considerable performance from ultraviolet to terahertz. For all examined wavelengths, the photoresponsivities are all larger than 1 V W^-1 while the response time is less than 10 ms, much shorter than the reported ultra-broadband photodetectors made of millimetric scale graphene, ternary chalcogenide single crystal, and other materials. The extraordinary performance is fully discussed and can be attributed to the thermal localization enhanced PTE effect. Because of the short thermal decay length and low thermal loss, the heat generated by the illumination is localized in only a micrometer scale along the channel, and thus a strong PTE response is produced. In addition, the fabricated device also demonstrates robust flexibility and stability. Thanks to the quasi-one-dimensional (quasi-1D) structure, the NbS₃ crystal is easy to be scaled down and thus intrinsically facilitate the integration of detectors. With these favorable merits, the quasi-1D NbS₃ crystal holds a promising potential in high-performance, ultra-broadband photodetectors.