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Han R, Xue X, Yan Y. Hole-Doping-Induced Perpendicular Magnetic Anisotropy and High Curie Temperature in a CrSX (X = Cl, Br, I) Semiconductor Monolayer. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:3105. [PMID: 38133001 PMCID: PMC10745588 DOI: 10.3390/nano13243105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 12/01/2023] [Accepted: 12/06/2023] [Indexed: 12/23/2023]
Abstract
A large perpendicular magnetic anisotropy and a high Curie temperature (TC) are crucial for the application of two-dimensional (2D) intrinsic ferromagnets to spintronic devices. Here, we investigated the electronic and magnetic properties of carrier-doped Van der Waals layered CrSX (X = Cl, Br, I) ferromagnets using first-principles calculations. It was found that hole doping can increase the magnitude of the magnetic anisotropy energy (MAE) and change the orientation of the easy magnetization axis at small doping amounts of 2.37 × 1013, 3.98 × 1012, and 3.33 × 1012/cm2 for CrSCl, CrSBr, and CrSI monolayers, respectively. The maximum values of the MAE reach 57, 133, and 1597 μeV/u.c. for the critical hole-doped CrSCl, CrSBr, and CrSI with spin orientation along the (001) direction, respectively. Furthermore, the Fermi energy level of lightly hole-doped CrSX (X = Cl, Br, I) moves into the spin-up valence band, leading to the CrSX (X = Cl, Br, I) magnetic semiconductor monolayer becoming first a half-metal and then a metal. In addition, the TC can also be increased up to 305, 317, and 345 K for CrSCl, CrSBr, and CrSI monolayers at doping amounts of 5.94 × 1014, 5.78 × 1014, and 5.55 × 1014/cm2, respectively. These properties suggest that the hole-doping process can render 2D CrSX (X = Cl, Br, I) monolayers remarkable materials for application to electrically controlled spintronic devices.
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Affiliation(s)
- Ruilin Han
- School of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China
| | - Xiaomin Xue
- Institute of Theoretical Physics, Shanxi University, Taiyuan 030006, China;
| | - Yu Yan
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun 130012, China;
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2
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Kumari P, Rani S, Kar S, Kamalakar MV, Ray SJ. Strain-controlled spin transport in a two-dimensional (2D) nanomagnet. Sci Rep 2023; 13:16599. [PMID: 37789039 PMCID: PMC10547692 DOI: 10.1038/s41598-023-43025-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 09/18/2023] [Indexed: 10/05/2023] Open
Abstract
Semiconductors with controllable electronic transport coupled with magnetic behaviour, offering programmable spin arrangements present enticing potential for next generation intelligent technologies. Integrating and linking these two properties has been a long standing challenge for material researchers. Recent discoveries in two-dimensional (2D) magnet shows an ability to tune and control the electronic and magnetic phases at ambient temperature. Here, we illustrate controlled spin transport within the magnetic phase of the 2D semiconductor CrOBr and reveal a substantial connection between its magnetic order and charge carriers. First, we systematically analyse the strain-induced electronic behaviour of 2D CrOBr using density functional theory calculations. Our study demonstrates the phase transition from a magnetic semiconductor → half metal → magnetic metal in the material under strain application, creating intriguing spin-resolved conductance with 100% spin polarisation and spin-injection efficiency. Additionally, the spin-polarised current-voltage (I-V) trend displayed conductance variations with high strain-assisted tunability and a peak-to-valley ratio as well as switching efficiency. Our study reveals that CrOBr can exhibit highly anisotropic behaviour with perfect spin filtering, offering new implications for strain engineered magneto-electronic devices.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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He W, Yin Y, Gong Q, Evans RFL, Gutfleisch O, Xu BX, Yi M, Guo W. Giant Magnetocaloric Effect in Magnets Down to the Monolayer Limit. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300333. [PMID: 37150875 DOI: 10.1002/smll.202300333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Revised: 04/17/2023] [Indexed: 05/09/2023]
Abstract
2D magnets can potentially revolutionize information technology, but their potential application to cooling technology and magnetocaloric effect (MCE) in a material down to the monolayer limit remain unexplored. Herein, it is revealed through multiscale calculations the existence of giant MCE and its strain tunability in monolayer magnets such as CrX3 (X = F, Cl, Br, I), CrAX (A = O, S, Se; X = F, Cl, Br, I), and Fe3 GeTe2 . The maximum adiabatic temperature change (Δ T ad max $\Delta T_{{\rm{ad}}}^{\max }$ ), maximum isothermal magnetic entropy change, and specific cooling power in monolayer CrF3 are found as high as 11 K, 35 µJ m-2 K-1 , and 3.5 nW cm-2 under a magnetic field of 5 T, respectively. A 2% biaxial and 5% a-axis uniaxial compressive strain can remarkably increaseΔ T ad max $\Delta T_{{\rm{ad}}}^{\max }$ of CrCl3 and CrOF by 230% and 37% (up to 15.3 and 6.0 K), respectively. It is found that large net magnetic moment per unit area favors improved MCE. These findings advocate the giant-MCE monolayer magnets, opening new opportunities for magnetic cooling at nanoscale.
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Affiliation(s)
- Weiwei He
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, 210016, China
| | - Yan Yin
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, 210016, China
| | - Qihua Gong
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, 210016, China
| | | | - Oliver Gutfleisch
- Institute of Materials Science, Technische Universität Darmstadt, 64287, Darmstadt, Germany
| | - Bai-Xiang Xu
- Institute of Materials Science, Technische Universität Darmstadt, 64287, Darmstadt, Germany
| | - Min Yi
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, 210016, China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, 210016, China
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Zhang M, Hu Q, Huang Y, Hua C, Cheng M, Liu Z, Song S, Wang F, Lu H, He P, Cao GH, Xu ZA, Lu Y, Yang J, Zheng Y. Spin-Lattice Coupled Metamagnetism in Frustrated van der Waals Magnet CrOCl. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300964. [PMID: 37066740 DOI: 10.1002/smll.202300964] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2023] [Revised: 03/29/2023] [Indexed: 06/19/2023]
Abstract
The long-range magnetic ordering in frustrated magnetic systems is stabilized by coupling magnetic moments to various degrees of freedom, for example, by enhancing magnetic anisotropy via lattice distortion. Here, the unconventional spin-lattice coupled metamagnetic properties of atomically-thin CrOCl, a van der Waals antiferromagnet with inherent magnetic frustration rooted in the staggered square lattice, are reported. Using temperature- and angle-dependent tunneling magnetoconductance (TMC), in complementary with magnetic torque and first-principles calculations, the antiferromagnetic (AFM)-to-ferrimagnetic (FiM) metamagnetic transitions (MTs) of few-layer CrOCl are revealed to be triggered by collective magnetic moment flipping rather than the established spin-flop mechanism, when external magnetic field (H) enforces a lattice reconstruction interlocked with the five-fold periodicity of the FiM phase. The spin-lattice coupled MTs are manifested by drastic jumps in TMC, which show anomalous upshifts at the transition thresholds and persist much higher above the AFM Néel temperature. While the MTs exhibit distinctive triaxial anisotropy, reflecting divergent magnetocrystalline anisotropy of the c-axis AFM ground state, the resulting FiM phase has an a-c easy plane in which the magnetization axis is freely rotated by H. At the 2D limit, such a field-tunable FiM phase may provide unique opportunities to explore exotic emergent phenomena and novel spintronics devices.
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Affiliation(s)
- Minjie Zhang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Qifeng Hu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yuqiang Huang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Chenqiang Hua
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Man Cheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zhou Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Shijie Song
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Fanggui Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Hengzhe Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Pimo He
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Guang-Han Cao
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yunhao Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yi Zheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
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Bai Y, Shi R, Wu Y, Wang B, Zhang X. Cr 2XTe 4(X = Si, Ge) monolayers: a new type of two-dimensional high- TCIsing ferromagnetic semiconductors with a large magnetic anisotropy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:384001. [PMID: 35793684 DOI: 10.1088/1361-648x/ac7f16] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Accepted: 07/06/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) ferromagnetic semiconductor (FMS) provides the ideal platform for the development of quantum information technology in nanoscale devices. However, most of them suffer from low Curie temperature and small magnetic anisotropic energy (MAE), severely limiting their practical application. In this work, by using first-principles calculations, we predicted two stable 2D materials, namely, Cr2SiTe4and Cr2GeTe4monolayers. Interestingly, both of them are intrinsic direct band gap FMSs (∼1 eV) with a large magnetization (8µBf.u.-1) and sizable MAE (∼500μeV Cr-1). Monte Carlo simulations based on Heisenberg model suggest markedly high Curie temperatures of these monolayers (∼200 K). Besides, their high mechanical, dynamical, and thermal stabilities are further verified by elastic constants, phonon dispersion calculations, andab initiomolecular dynamics simulations. The outstanding attributes render Cr2XTe4(X = Si, Ge) monolayers broadening the candidates of 2D FMS for a wide range of applications.
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Affiliation(s)
- Yihang Bai
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China
| | - Rui Shi
- Patent Examination Cooperation (Henan) Center of the Patent Office, China National Intellectual Property Administration, Zhengzhou 450000, People's Republic of China
| | - Yaxuan Wu
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China
| | - Bing Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China
| | - Xiuyun Zhang
- College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
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Gu P, Sun Y, Wang C, Peng Y, Zhu Y, Cheng X, Yuan K, Lyu C, Liu X, Tan Q, Zhang Q, Gu L, Wang Z, Wang H, Han Z, Watanabe K, Taniguchi T, Yang J, Zhang J, Ji W, Tan PH, Ye Y. Magnetic Phase Transitions and Magnetoelastic Coupling in a Two-Dimensional Stripy Antiferromagnet. NANO LETTERS 2022; 22:1233-1241. [PMID: 35041438 DOI: 10.1021/acs.nanolett.1c04373] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Materials with a quasi-one-dimensional stripy magnetic order often exhibit low crystal and magnetic symmetries, thus allowing the presence of various energy coupling terms and giving rise to macroscopic interplay between spin, charge, and phonon. In this work, we performed optical, electrical and magnetic characterizations combined with first-principles calculations on a van der Waals antiferromagnetic insulator chromium oxychloride (CrOCl). We detected the subtle phase transition behaviors of exfoliated CrOCl under varying temperature and magnetic field and clarified its controversial spin structures. We found that the antiferromagnetism and its air stability persist down to few-layer samples, making it a promising candidate for future 2D spintronic devices. Additionally, we verified the magnetoelastic coupling effect in CrOCl, allowing for the potential manipulation of the magnetic states via electric field or strain. These virtues of CrOCl provide us with an ideal platform for fundamental research on spin-charge, spin-phonon coupling, and spin-interactions.
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Affiliation(s)
- Pingfan Gu
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Yujia Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Cong Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
| | - Yuxuan Peng
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Yaozheng Zhu
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Xing Cheng
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Kai Yuan
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Chao Lyu
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Xuelu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qinghai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhi Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 03006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 03006, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong 226010, Jiangsu China
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