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Wu G, Xiang L, Wang W, Yao C, Yan Z, Zhang C, Wu J, Liu Y, Zheng B, Liu H, Hu C, Sun X, Zhu C, Wang Y, Xiong X, Wu Y, Gao L, Li D, Pan A, Li S. Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system. Sci Bull (Beijing) 2024; 69:473-482. [PMID: 38123429 DOI: 10.1016/j.scib.2023.12.027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 11/23/2023] [Accepted: 12/04/2023] [Indexed: 12/23/2023]
Abstract
The growth of data and Internet of Things challenges traditional hardware, which encounters efficiency and power issues owing to separate functional units for sensors, memory, and computation. In this study, we designed an α-phase indium selenide (α-In2Se3) transistor, which is a two-dimensional ferroelectric semiconductor as the channel material, to create artificial optic-neural and electro-neural synapses, enabling cutting-edge processing-in-sensor (PIS) and computing-in-memory (CIM) functionalities. As an optic-neural synapse for low-level sensory processing, the α-In2Se3 transistor exhibits a high photoresponsivity (2855 A/W) and detectivity (2.91 × 1014 Jones), facilitating efficient feature extraction. For high-level processing tasks as an electro-neural synapse, it offers a fast program/erase speed of 40 ns/50 µs and ultralow energy consumption of 0.37 aJ/spike. An AI vision system using α-In2Se3 transistors has been demonstrated. It achieved an impressive recognition accuracy of 92.63% within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities. This study demonstrates the potential of the α-In2Se3 transistor in future vision hardware, enhancing processing, power efficiency, and AI applications.
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Affiliation(s)
- Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Li Xiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Wenqiang Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Zeyi Yan
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Jiaxin Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yong Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengwei Hu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yizhe Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Xiong Xiong
- School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Yanqing Wu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China; School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
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Das B, Baek S, Niu J, Jang C, Lee Y, Lee S. Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications. ACS NANO 2023; 17:21297-21306. [PMID: 37882177 DOI: 10.1021/acsnano.3c05771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
Rapid developments in artificial neural network techniques and retina-inspired artificial visual systems are required to realize the sensing, processing, and memorization of an optical signal in a single device. Herein, a ferroelectric field-effect transistor fabricated with CuInP2S6 and α-In2Se3 van der Waals heterostructures is proposed and demonstrated for the development of an artificial visual system. The dipole polarizations are coupled and bidirectionally locked inside the ferroelectric α-In2Se3 along the in-plane and out-of-plane directions and are controlled by the gate voltages. Furthermore, light-induced polarization can change the order of polarization of the dipoles inside α-In2Se3. We demonstrate that using the combined control of these electrical and optical signals, the device may function like a retina-inspired vision system. The device can operate across a wide wavelength range (405-850 nm) and detect very low incident light (0.03 mW/cm2). Color recognition, high paired-pulse facilitation (∼170%), and short- to long-term memory transitions through quick learning are observed using this device. Additionally, this device demonstrates different complex processing abilities, including pattern recognition, light adaptation, optical logic operation, and event learning. The proposed ferroelectric heterostructure-based artificial visual system can serve as an essential bridge for fulfilling the future requirements of all-in-one sensing and memory-processing devices.
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Affiliation(s)
- Biswajit Das
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Korea
| | - Sungpyo Baek
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Korea
| | - Jingjie Niu
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Korea
| | - Cheolhwa Jang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Korea
| | - Yoonmyung Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon 16419, Korea
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3
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Lobanov AD, Korkh YV, Patrakov EI, Gaviko VS, Sarychev MN, Ivanov VY, Kuznetsova TV. Effect of 10 MeV electron irradiation on the electrical properties of bulk α-In 2Se 3 crystals. Phys Chem Chem Phys 2023; 25:25772-25779. [PMID: 37724343 DOI: 10.1039/d3cp03098a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/20/2023]
Abstract
In this work, the effect of 10 MeV electron irradiation on the structure and electrical properties of bulk α-In2Se3 crystals is studied by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray microanalysis, atomic-force microscopy, and Raman spectroscopy methods. Droplets of 200-500 nm in size were detected on the bulk α-In2Se3 crystal surface. The droplets can be formations with the γ-In2Se3 crystalline phase. The current-voltage characteristics measured by conductive atomic-force microscopy are different on and outside the droplets after electron irradiation. On the droplets, slightly better conductive properties were detected after irradiation with the electron fluence of 1015 cm-2. It is found that local resistance increases significantly for both on and outside the droplets after irradiation with the electron fluence of 1017 cm-2. Our study shows that electron irradiation can contribute to the disappearance of ferroelectric domains in the bulk α-In2Se3 crystals. Also, the distribution of surface potentials measured by Kelvin probe force microscopy becomes more uniform after electron irradiation. The results obtained in the work allow us to calculate the operating time of the device containing α-In2Se3 under conditions of long-term electron irradiation with high-energy electrons. The study shows that α-In2Se3 is a very promising material for applications in the aerospace and nuclear industries.
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Affiliation(s)
- Alexey D Lobanov
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | - Yulia V Korkh
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | - Evgeny I Patrakov
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | - Vasily S Gaviko
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | | | | | - Tatyana V Kuznetsova
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
- Ural Federal University, Yekaterinburg, 620002, Russia
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4
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Azzaroni O, Piccinini E, Fenoy G, Marmisollé W, Ariga K. Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics. NANOTECHNOLOGY 2023; 34:472001. [PMID: 37567153 DOI: 10.1088/1361-6528/acef26] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2023] [Accepted: 08/10/2023] [Indexed: 08/13/2023]
Abstract
The layer-by-layer (LbL) technique has been proven to be one of the most versatile approaches in order to fabricate functional nanofilms. The use of simple and inexpensive procedures as well as the possibility to incorporate a very wide range of materials through different interactions have driven its application in a wide range of fields. On the other hand, field-effect transistors (FETs) are certainly among the most important elements in electronics. The ability to modulate the flowing current between a source and a drain electrode via the voltage applied to the gate electrode endow these devices to switch or amplify electronic signals, being vital in all of our everyday electronic devices. In this topical review, we highlight different research efforts to engineer field-effect transistors using the LbL assembly approach. We firstly discuss on the engineering of the channel material of transistors via the LbL technique. Next, the deposition of dielectric materials through this approach is reviewed, allowing the development of high-performance electronic components. Finally, the application of the LbL approach to fabricate FETs-based biosensing devices is also discussed, as well as the improvement of the transistor's interfacial sensitivity by the engineering of the semiconductor with polyelectrolyte multilayers.
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Affiliation(s)
- Omar Azzaroni
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Esteban Piccinini
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Gonzalo Fenoy
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Waldemar Marmisollé
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
- Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa 277-0825, Japan
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Meng Q, Yu F, Liu G, Zong J, Tian Q, Wang K, Qiu X, Wang C, Xi X, Zhang Y. Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β-In2Se3 Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091533. [PMID: 37177078 PMCID: PMC10180126 DOI: 10.3390/nano13091533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2023] [Revised: 04/29/2023] [Accepted: 04/29/2023] [Indexed: 05/15/2023]
Abstract
Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In2Se3 has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of β-In2Se3 films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer β-In2Se3 is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer β-In2Se3/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In2Se3 film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality β-In2Se3 thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial β-In2Se3 films.
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Affiliation(s)
- Qinghao Meng
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Fan Yu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Gan Liu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Junyu Zong
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qichao Tian
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Kaili Wang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Xiaodong Qiu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Can Wang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha 410114, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yi Zhang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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Qu J, Liu C, Zubair M, Zeng Z, Liu B, Yang X, Luo Z, Yi X, Chen Y, Chen S, Pan A. A universal growth method for high-quality phase-engineered germanium chalcogenide nanosheets. NANOSCALE 2023; 15:4438-4447. [PMID: 36752096 DOI: 10.1039/d2nr05657g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Low-dimensional group IV-VI metal chalcogenide-based semiconductors hold great promise for opto-electronic device applications owing to their diverse crystalline phases and intriguing properties related to thermoelectric and ferroelectric effects. Herein, we demonstrate a universal chemical vapor deposition (CVD) growth method to synthesize stable germanium chalcogenide-based (GeS, GeS2, GeSe, GeSe2) nanosheets, which increases the library of the p-type semiconductor. The phase transition between different crystalline polytypes can be deterministically controlled by hydrogen concentration in the reaction chamber. Structural characterization and synthesis experiments identify the behavior, where the higher hydrogen concentration promotes the transiton from germanium dichalcogenides to germanium monochalcogenides. The angle-polarized and temperature-dependent Raman spectra demonstrate the strong interlayer coupling and lattice orientation. Based on the optimized growth scheme and systematic comparison of electrical properties, GeSe nanosheet photodetectors were demonstrated, which exhibit superior device performance on SiO2/Si and HfO2/Si substrate with a high photoresponsivity up to 104 A W-1, fast response time less than 15 ms, and high mobility of 3.2 cm2 V-1 s-1, which is comparable to the mechanically exfoliated crystals. Our results manifest the hydrogen-mediated deposition strategy as a facile control knob to engineer crystalline phases of germanium chalcogenides for high performance optoelectronic devices.
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Affiliation(s)
- Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Chenxi Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Muhammad Zubair
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Zhouxiaosong Zeng
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Bo Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xiao Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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8
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Thin-Film Transistors from Electrochemically Exfoliated In 2Se 3 Nanosheets. MICROMACHINES 2022; 13:mi13060956. [PMID: 35744571 PMCID: PMC9229644 DOI: 10.3390/mi13060956] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 06/13/2022] [Accepted: 06/15/2022] [Indexed: 12/04/2022]
Abstract
The wafer-scale fabrication of two-dimensional (2D) semiconductor thin films is the key to the preparation of large-area electronic devices. Although chemical vapor deposition (CVD) solves this problem to a certain extent, complex processes are required to realize the transfer of thin films from the growth substrate to the device substrate, not to mention its harsh reaction conditions. The solution-based synthesis and assembly of 2D semiconductors could realize the large-scale preparation of 2D semiconductor thin films economically. In this work, indium selenide (In2Se3) nanosheets with uniform sizes and thicknesses were prepared by the electrochemical intercalation of quaternary ammonium ions into bulk crystals. Layer-by-layer (LbL) assembly was used to fabricate scalable and uniform In2Se3 thin films by coordinating In2Se3 with poly(diallyldimethylammonium chloride) (PDDA). Field-effect transistors (FETs) made from a single In2Se3 flake and In2Se3 thin films showed mobilities of 12.8 cm2·V−1·s−1 and 0.4 cm2·V−1·s−1, respectively, and on/off ratios of >103. The solution self-assembled In2Se3 thin films enriches the research on wafer-scale 2D semiconductor thin films for electronics and optoelectronics and has broad prospects in high-performance and large-area flexible electronics.
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Lyu F, Li X, Tian J, Li Z, Liu B, Chen Q. Temperature-Driven α-β Phase Transformation and Enhanced Electronic Property of 2H α-In 2Se 3. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23637-23644. [PMID: 35548977 DOI: 10.1021/acsami.2c03270] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In recent years, thin layered indium selenide (In2Se3) has attracted rapidly increasing attention due to its fascinating properties and promising applications. Here, we report the temperature-driven α-β phase transformation and the enhanced electronic property of 2H α-In2Se3. We find that 2H α-In2Se3 transforms to β-In2Se3 when it is heated to a high temperature, and the transformation temperature increases from 550 to 650 K with the thickness decreasing from 67 to 17 nm. Additionally, annealing the sample below the phase transformation temperature can effectively improve the electronic property of a 2H α-In2Se3 field-effect transistor, including increasing the on-state current, decreasing the off-state current, and improving the subthreshold swing. After annealing, not only the contact resistance decreases significantly but also the mobility at 300 K increases more than 2 times to 45.83 cm2 V-1 s-1, which is the highest among the reported values. Our results provide an effective method to improve the electrical property and the stability of the In2Se3 nanodevices.
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Affiliation(s)
- Fengjiao Lyu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Xuan Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Jiamin Tian
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Zhiwei Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Bo Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
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10
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Mukherjee S, Koren E. Indium Selenide (In
2
Se
3
) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications. Isr J Chem 2022. [DOI: 10.1002/ijch.202100112] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Subhrajit Mukherjee
- Nanoscale Electronic Materials & Devices Laboratory, Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology 3200003 Haifa Israel
| | - Elad Koren
- Nanoscale Electronic Materials & Devices Laboratory, Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology 3200003 Haifa Israel
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11
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Li J, Li H, Niu X, Wang Z. Low-Dimensional In 2Se 3 Compounds: From Material Preparations to Device Applications. ACS NANO 2021; 15:18683-18707. [PMID: 34870407 DOI: 10.1021/acsnano.1c03836] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.
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Affiliation(s)
- Junye Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Handong Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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12
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Zheng Z, Liu K, Chen X, Qiao B, Ma H, Liu D, Liu L, Shen D. High-performance flexible UV photodetector based on self-supporting ZnO nano-networks fabricated by substrate-free chemical vapor deposition. NANOTECHNOLOGY 2021; 32:475201. [PMID: 34371489 DOI: 10.1088/1361-6528/ac1bda] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2021] [Accepted: 08/08/2021] [Indexed: 05/24/2023]
Abstract
Self-supporting ZnO nano-networks have been demonstrated by a substrate-free chemical vapor deposition process for the application as flexible ultraviolet (UV) photodetector. The device shows a responsivity of ∼300 mA W-1over a wide wavelength range from 254 to 365 nm and a high UV/visible rejection ratio of more than 104. More interestingly, a short 90%-10% decay time of <0.12 s can be observed in the air atmosphere, and the current can fully recover to its original dark value within 1 s after switching off the light. The quick response speed should be associated with the wire-wire junction barriers and the adsorption/desorption process of oxygen molecules on the oxygen vacancies near the surface of the ZnO. In addition, the photocurrent, the dark current and the response speed of the ZnO nano-networks flexible UV photodetector nearly stay the same under different bending conditions, suggesting the excellent photoelectric stability and repeatability. Such a simple and cheap way for fabricating self-supporting ZnO-based devices has broad application prospects in the fields of flexible and wearable electronic devices.
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Affiliation(s)
- Zhiyao Zheng
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Kewei Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xing Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
| | - Baoshi Qiao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hongyu Ma
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Deming Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
| | - Lei Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dezhen Shen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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13
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Weng SR, Zhen WL, Yan X, Yue ZL, Hu HJ, Xu F, Zhang RR, Pi L, Zhu WK, Zhang CJ. Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe 2film using a new one-step strategy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:395001. [PMID: 34252886 DOI: 10.1088/1361-648x/ac1368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2021] [Accepted: 07/12/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials attached with flexible substrates enable possibilities to apply their superior properties to the rapidly increasing demand for foldable displays and wearable biosensors in the internet-of-things technology. However, previous two-step strategy to construct the flexible devices, namely first obtaining 2D materials elsewhere and then transferring them onto flexible substrates, can cause huge problems, including irreversibly undermining the device performance and limiting the material size. Here we propose a new one-step strategy (other than the liquid phase processing and low temperature synthesis methods), namely directly depositing appropriate 2D materials onto flexible substrates, which involves no transferring and can maintain the crystal quality and properties to the greatest extent. More importantly, this strategy in principle has no limit in the film size, hence removing a main obstacle for the practical use of flexible films, such as complex logic operations and large-area optoelectronic applications. Using this strategy, a centimeter-scale SnSe2film is directly grown on polydimethylsiloxane, which is characterized as a uniform, out-of-plane oriented and semiconducting film that is robust to deformations. Based on the film, a flexible photodetector is fabricated and distinct photoresponse to a broad spectrum of light (405-830 nm) is observed, with remarkable technical parameters.
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Affiliation(s)
- S R Weng
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W L Zhen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - X Yan
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - Z L Yue
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - H J Hu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - F Xu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - R R Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - L Pi
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W K Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - C J Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
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14
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High-yield exfoliation of 2D semiconductor monolayers and reassembly of organic/inorganic artificial superlattices. Chem 2021. [DOI: 10.1016/j.chempr.2021.03.022] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
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15
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Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:056501. [PMID: 33761489 DOI: 10.1088/1361-6633/abf1d4] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 03/24/2021] [Indexed: 06/12/2023]
Abstract
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal-2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.
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Affiliation(s)
- Yangyang Wang
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Xiuying Zhang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yuanyuan Pan
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Jingzhen Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Han Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Lin Xiao
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Feng Pan
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
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16
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Huang SM, Hung JL, Chou M, Chen CY, Liu FC, Chen RS. The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb 2Te 3 Flakes. SENSORS 2021; 21:s21041535. [PMID: 33672142 PMCID: PMC7926365 DOI: 10.3390/s21041535] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Revised: 01/27/2021] [Accepted: 02/19/2021] [Indexed: 11/25/2022]
Abstract
Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. Therefore, finding a wavelength-insensitive photosensor is imperative in this application. Photocurrent measurements were performed in Sb2Te3 flakes at various wavelengths ranging from visible to near IR light. The measured photocurrent change was insensitive to wavelengths from 300 to 1000 nm. The observed wavelength response deviation was lower than that in all previous reports. Our results show that the corresponding energies of these photocurrent peaks are consistent with the energy difference of the density of state peaks between conduction and valence bands. This suggests that the observed photocurrent originates from these band structure peak transitions under light illumination. Contrary to the most common explanation that observed broadband photocurrent carrier is mainly from the surface state in low-dimensional materials, our experimental result suggests that bulk state band structure is the main source of the observed photocurrent and dominates the broadband photocurrent.
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Affiliation(s)
- Shiu-Ming Huang
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan;
- Center of Crystal Research, National Sun Yat-sen University, Kaohsiung 80424, Taiwan;
- Correspondence:
| | - Jai-Lung Hung
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan;
| | - Mitch Chou
- Center of Crystal Research, National Sun Yat-sen University, Kaohsiung 80424, Taiwan;
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, TCECM, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Chi-Yang Chen
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan; (C.-Y.C.); (F.-C.L.); (R.-S.C.)
| | - Fang-Chen Liu
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan; (C.-Y.C.); (F.-C.L.); (R.-S.C.)
| | - Ruei-San Chen
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan; (C.-Y.C.); (F.-C.L.); (R.-S.C.)
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17
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Wu J, Ma H, Yin P, Ge Y, Zhang Y, Li L, Zhang H, Lin H. Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000053] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Affiliation(s)
- Jianghong Wu
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Hui Ma
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
| | - Peng Yin
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yanqi Ge
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Han Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Hongtao Lin
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
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18
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Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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19
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Improved Laser Damage Threshold of In 2Se 3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser. NANOMATERIALS 2019; 9:nano9091216. [PMID: 31466375 PMCID: PMC6780265 DOI: 10.3390/nano9091216] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2019] [Revised: 08/20/2019] [Accepted: 08/26/2019] [Indexed: 11/25/2022]
Abstract
In this study, a double-end pumped high-power passively mode-locked erbium-doped fiber laser (EDFL) was realized by employing a few-layered In2Se3 flakes as a saturable absorber (SA). Herein, the uniform large-scale In2Se3 flakes were synthesized by the physical vapor deposition (PVD) method. The PVD-In2Se3 SA exhibited a remarkable damage threshold of higher than 24 mJ/cm2. Meanwhile, the PVD-In2Se3 SA had a modulation depth and saturable intensity of 18.75% and 6.8 MW/cm2, respectively. Based on the In2Se3 SA, the stable bright pulses emitting at 1559.4 nm with an average output power/pulse energy/pulse duration of 122.4 mW/5.8 nJ/14.4 ns were obtained successfully. To our knowledge, 122.4 mW was the new major breakthrough of mode-locked Er-doped fiber lasers. In addition, this is the first demonstration of the dark-bright pulse pair generation based on In2Se3 SA. The maximum average output power of the dark-bright pulse reached 121.2 mW, which also showed significant enhancement in comparison with previous works. Our excellent experiment results fully prove the superiority of our experimental design scheme and indicate that the PVD-In2Se3 could operate as a promising highly-nonlinear photonic material for a high-power fiber laser.
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20
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Tang B, Hou L, Sun M, Lv F, Liao J, Ji W, Chen Q. UV-SWIR broad range photodetectors made from few-layer α-In 2Se 3 nanosheets. NANOSCALE 2019; 11:12817-12828. [PMID: 31180398 DOI: 10.1039/c9nr03077h] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Photodetectors are very important for many applications. However, inexpensive infrared photodetectors with high performance at room temperature are still rare. Furthermore, it is still a great challenge to realize on-chip wide-spectrum detection by using conventional photodetectors. van der Waals semiconductors are promising for high performance optoelectronic devices. Here, we report broad range photodetectors made from few-layer α-In2Se3 nanosheets. The photodetectors show response in an unexpected broad range from ultraviolet (325 nm) to short-wavelength infrared (1800 nm) at room temperature. The optical response in the long wavelengths beyond the bandgap is attributed to oxygen absorption and oxygen-associated selenium defects in In2Se3, supported by theoretical simulation and controlled experiments. High responses to 700 nm and 1550 nm lasers are demonstrated on the same In2Se3 device. The stability of In2Se3 under the atmosphere at room temperature and the low power consumption of the devices make the In2Se3 photodetectors promising for optoelectronic applications.
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Affiliation(s)
- Bin Tang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China. and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Linfang Hou
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices and Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Mei Sun
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
| | - Fengjiao Lv
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
| | - Jianhui Liao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices and Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
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21
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Li XZ, Wang YF, Xia J, Meng XM. Growth of vertical heterostructures based on orthorhombic SnSe/hexagonal In 2Se 3 for high-performance photodetectors. NANOSCALE ADVANCES 2019; 1:2606-2611. [PMID: 36132733 PMCID: PMC9419546 DOI: 10.1039/c9na00120d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Accepted: 05/13/2019] [Indexed: 06/13/2023]
Abstract
Vertical heterostructures based on two-dimensional (2D) layered materials are ideal platforms for electronic structure engineering and novel device applications. However, most of the current heterostructures focus on layered crystals with a similar lattice. In addition, the heterostructures made by 2D materials with different structures are rarely investigated. In this study, we successfully fabricated vertical heterostructures by combining orthorhombic SnSe/hexagonal In2Se3 vertical heterostructures using a two-step physical vapor deposition (PVD) method. Structural characterization reveals that the heterostructures are formed of vertically stacked SnSe on the top of the In2Se3 film, and vertical heterostructures possess high quality, where In2Se3 exposed surface is the (0001) plane and SnSe prefers growing along the [100] direction. Raman maps confirm the precise spatial modulation of the as-grown SnSe/In2Se3 heterostructures. In addition, high-performance photodetectors based on the vertical heterostructures were fabricated directly on the substrate, which showed a broadband response, reversibility and stability. Compared with the dark current, the device demonstrated one order magnification of photocurrent, about 186 nA, under 405 nm laser illumination and power of 1.5 mW. Moreover, the device shows an obvious increase in the photocurrent intensity with the changing incident laser power, where I ph ∝ P 0.7. Also, the device demonstrated a high responsivity of up to 350 mA W-1 and a fast response time of about 139 ms. This study broadens the horizon for the synthesis and application of vertical heterostructures based on 2D layered materials with different structures and further develops exciting technologies beyond the reach of the existing materials.
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Affiliation(s)
- Xuan-Ze Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science Beijing 10049 P. R. China
| | - Yi-Fan Wang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science Beijing 10049 P. R. China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Xiang-Min Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
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