Highly sensitive NO2 gas sensors based on hexagonal SnS2 nanoplates operating at room temperature

2H-SnS2 assembled with petaloid 1T@2H-MoS2 nanosheet heterostructures for room temperature NO2 gas sensing

In this study, we explored the gas-sensing capabilities of MoS2 petaloid nanosheets in the metallic 1T phase with the commonly investigated semiconducting 2H phase. By synthesizing SnS2 nanoparticles and MoS2 petaloid nanosheets through a hydrothermal method, we achieve notable sensing performance for NO2 gas at room temperature (27 °C). This investigation represents a novel study, and to the best of our knowledge no, prior similar investigations have been reported in the literature for 1T@2HMoS2/SnS2 heterostructures for room temperature NO2 gas sensing. The formed heterostructure between SnS2 nanoparticles and petaloid MoS2 nanosheets exhibits synergistic effects, offering highly active sites for NO2 gas adsorption, consequently enhancing sensor response. Our sensor demonstrated a remarkable sensing response (R a/R g = 7.49) towards 1 ppm of NO2, rapid response time of 54 s, baseline recovery in 345 s, good selectivity and long-term stability, underscoring its potential for practical gas-sensing applications.

In Situ Fabrication of SnS2/SnO2 Heterostructures for Boosting Formaldehyde-Sensing Properties at Room Temperature

Formaldehyde, as a harmful gas produced by materials used for decorative purposes, has a serious impact on human health, and is also the focus and difficulty of indoor environmental polution prevention; hence, designing and developing gas sensors for the selective measurement of formaldehyde at room temperature is an urgent task. Herein, a series of SnS2/SnO2 composites with hollow spherical structures were prepared by a facile hydrothermal approach for the purpose of formaldehyde sensing at room temperature. These novel hierarchical structured SnS2/SnO2 composites-based gas sensors demonstrate remarkable selectivity towards formaldehyde within the concentration range of sub-ppm (0.1 ppm) to ppm (10 ppm) at room temperature. Notably, the SnS2/SnO2-2 sensor exhibits an exceptional formaldehyde-sensing performance, featuring an ultra-high response (1.93, 0.1 ppm and 17.51, 10 ppm), as well as good repeatability, long-term stability, and an outstanding theoretical detection limit. The superior sensing capabilities of the SnS2/SnO2 composites can be attributed to multiple factors, including enhanced formaldehyde adsorption, larger specific surface area and porosity of the hollow structure, as well as the synergistic interfacial incorporation of the SnS2/SnO2 heterojunction. Overall, the excellent gas sensing performance of SnS2/SnO2 hollow spheres has opened up a new way for their detection of trace formaldehyde at room temperature.

Investigations of Vacancy-Assisted Selective Detection of NO2 Molecules in Vertically Aligned SnS2

Two important methods for enhancing gas sensing performance are vacancy/defect and interlayer engineering. Tin sulfide (SnS₂) has recently attracted much attention for sensing of the NO₂ gas due to its active surface sites and tunable electronic structure. Herein, SnS₂ has been synthesized by the chemical vapor deposition (CVD) method followed by nitrogen plasma treatment with different exposure times for fast detection of NO₂ molecules. Plasma treatment created a substantial number of surface vacancies on SnS₂ flakes, which were controlled by the exposure period to modify the surface of flakes. After 12 min of nitrogen plasma treatment, SnS₂ nanoflakes show considerable improvement in NO₂ sensing characteristics, including a high sensing response of ∼264% toward 100 ppm NO₂ at 120°C. The enhancement in the relative response of the sensor is due to the electronic interaction between NO₂ molecules and the S vacancies on the surface of SnS₂. Density functional theory (DFT) computations indicate that the S-vacancy defects on the surface dominate the effective NO₂ detection and the NO₂ adsorption mechanism transition from physisorption to chemisorption. Adsorption kinetics of the NO₂ gas over SnS₂ nanoflake-based chemiresistor sensors were studied using the Lee and Strano model [ Langmuir 2005, 21(11), 5192-5196]. The irreversible rate of the reaction for various NO₂ concentrations exposed to the gas sensor is extracted using this model, which also appropriately describes the response curves. The forward rate constant of the irreversible gas sensor increased with the increase of the N₂ plasma treatment time and reached the maximum in the 12 min plasma-treated sample. Through defect engineering, this research may open up new vistas for the design and synthesis of 2D materials with enhanced sensing properties.

Synthesis and Applications of Dimensional SnS2 and SnS2/Carbon Nanomaterials

Dimensional nanomaterials can offer enhanced application properties benefiting from their sizes and morphological orientations. Tin disulfide (SnS₂) and carbon are typical sources of dimensional nanomaterials. SnS₂ is a semiconductor with visible light adsorption properties and has shown high energy density and long cycle life in energy storage processes. The integration of SnS₂ and carbon materials has shown enhanced visible light absorption and electron transmission efficiency. This helps to alleviate the volume expansion of SnS₂ which is a limitation during energy storage processes and provides a favorable bandgap in photocatalytic degradation. Several innovative approaches have been geared toward controlling the size, shape, and hybridization of SnS₂/Carbon composite nanostructures. However, dimensional nanomaterials of SnS₂ and SnS₂/Carbon have rarely been discussed. This review summarizes the synthesis methods of zero-, one-, two-, and three-dimensional SnS₂ and SnS₂/Carbon composite nanomaterials through wet and solid-state synthesis strategies. Moreover, the unique properties that promote their advances in photocatalysis and energy conversion and storage are discussed. Finally, some remarks and perspectives on the challenges and opportunities for exploring advanced SnS₂/Carbon nanomaterials are presented.

Cascading Photoelectric Detecting and Chemiresistive Gas-Sensing Properties of Pb5 S2 I6 Nanowire Mesh for Multi-Factor Accurate Fire Alarm

Accurate fire warning is very important for people's life and property safety. The most commonly used fire alarm is based on the detection of a single factor of gases, smoke particles, or temperature, which easily causes false alarm due to complex environmental conditions. A facile multi-factor route for fabricating an accurate analog fire alarm using a Pb₅ S₂ I₆ nanowire mesh based on its photoelectric and gas-sensing dual function is presented. The Pb₅ S₂ I₆ nanowire mesh presents excellent photoelectric detection capabilities and is sensitive to ppm-level NO₂ at room temperature. Under the "two-step verification" circuit of light and gas factors, the bimodal simulation fire alarm based on this Pb₅ S₂ I₆ nanowire mesh can resist the interference of complex environmental factors and effectively reduce the false alarm rate.

Unencapsulated and washable two-dimensional material electronic-textile for NO2 sensing in ambient air

Materials adopted in electronic gas sensors, such as chemiresistive-based NO₂ sensors, for integration in clothing fail to survive standard wash cycles due to the combined effect of aggressive chemicals in washing liquids and mechanical abrasion. Device failure can be mitigated by using encapsulation materials, which, however, reduces the sensor performance in terms of sensitivity, selectivity, and therefore utility. A highly sensitive NO₂ electronic textile (e-textile) sensor was fabricated on Nylon fabric, which is resistant to standard washing cycles, by coating Graphene Oxide (GO), and GO/Molybdenum disulfide (GO/MoS₂) and carrying out in situ reduction of the GO to Reduced Graphene Oxide (RGO). The GO/MoS₂ e-textile was selective to NO₂ and showed sensitivity to 20 ppb NO₂ in dry air (0.05%/ppb) and 100 ppb NO₂ in humid air (60% RH) with a limit of detection (LOD) of ~ 7.3 ppb. The selectivity and low LOD is achieved with the sensor operating at ambient temperatures (~ 20 °C). The sensor maintained its functionality after undergoing 100 cycles of standardised washing with no encapsulation. The relationship between temperature, humidity and sensor response was investigated. The e-textile sensor was embedded with a microcontroller system, enabling wireless transmission of the measurement data to a mobile phone. These results show the potential for integrating air quality sensors on washable clothing for high spatial resolution (< 25 cm²)—on-body personal exposure monitoring.

Epitaxial Growth of SnS2 Ribbons on a Au-Sn Alloy Seed Film Surface

Two-dimensional metal chalcogenide film has attracted considerable interest for its use as an emerging device material for nanoelectronics. The film has been synthesized by various methods such as chemical vapor deposition, molecular beam epitaxy, and thermal vapor sulfurization. In this study, we took a new approach to synthesize tin disulfide (SnS₂) by using Au-Sn alloy film as a metal seed deposited on a sapphire substrate. Multilayer SnS₂ films were formed in a ribbon shape on (111)-oriented Au film and were aligned in the directions of threefold rotational symmetry. Furthermore, the SnS₂ was found to have an epitaxial relationship relative to the Au film and the sapphire substrate as follows: SnS₂[2̅110] || Au[101̅] || Al₂O₃[011̅0]. The segregation of grains consisting of a Sn-rich phase on the Au film surface and the subsequent sulfurization of these grains can be the key to the epitaxial SnS₂ ribbon formation.

Charge transfer in SnS2/Na0.9Mg0.45Ti3.55O8 heterojunction in photocatalytic process

SnS₂/Na_0.9Mg_0.45Ti_3.55O₈ (SNMTO) composite photocatalyst was synthesized by a hydrothermal method. The chemical combination in lattice scale between SnS₂ and Na_0.9Mg_0.45Ti_3.55O₈ (NMTO) was observed by high-resolution transmission electron microscopy, indicating that heterojunctions were obtained between SnS₂ and NMTO. The photocatalytic activity of SNMTO heterojunctions was improved in comparison with that of pure NMTO and SnS₂ for the photocatalytic degradation of methylene blue and Rhodamine B. Electrons were excited in n-type semiconductors NMTO and SnS₂ under light illumination, and a part of them moved to the interface, determined with the surface potential reduction observed directly by Kelvin probe force microscopy. The charge redistribution in the composite illustrates a high density of interface states between SnS₂ and NMTO, which attract lots of photoelectrons, as a result enhancing the photocatalytic performance. This finding is very different from the speculation that the photogenerated electrons and holes migrate from one part to another because it is difficult for charge carriers to travel through the interface with high energy.

Strategy and Future Prospects to Develop Room-Temperature-Recoverable NO2 Gas Sensor Based on Two-Dimensional Molybdenum Disulfide

Nitrogen dioxide (NO2), a hazardous gas with acidic nature, is continuously being liberated in the atmosphere due to human activity. The NO2 sensors based on traditional materials have limitations of high-temperature requirements, slow recovery, and performance degradation under harsh environmental conditions. These limitations of traditional materials are forcing the scientific community to discover future alternative NO2 sensitive materials. Molybdenum disulfide (MoS2) has emerged as a potential candidate for developing next-generation NO2 gas sensors. MoS2 has a large surface area for NO2 molecules adsorption with controllable morphologies, facile integration with other materials and compatibility with internet of things (IoT) devices. The aim of this review is to provide a detailed overview of the fabrication of MoS2 chemiresistance sensors in terms of devices (resistor and transistor), layer thickness, morphology control, defect tailoring, heterostructure, metal nanoparticle doping, and through light illumination. Moreover, the experimental and theoretical aspects used in designing MoS2-based NO2 sensors are also discussed extensively. Finally, the review concludes the challenges and future perspectives to further enhance the gas-sensing performance of MoS2. Understanding and addressing these issues are expected to yield the development of highly reliable and industry standard chemiresistance NO2 gas sensors for environmental monitoring.

Edge-exposed MoS2 nanospheres assembled with SnS2 nanosheet to boost NO2 gas sensing at room temperature

SnS₂ nanosheets (NSs) have become an ideal candidate for high performance gas sensors due to their unique sensing properties. However, the restacking and aggregation in the process of sensor manufacturing have great influence on the gas sensing performance. In this study, we synthesized a novel heterojunction of the flower-like porous SnS₂ NSs with edge exposed MoS₂ nanospheres via a facile hydrothermal method and sensitive response has achieved at room temperature (27℃). After functionalization, the SMS-Ⅱ showed excellent response (Ra/Rg = 25.9-100 ppm NO₂), which is 22.3 times higher than that of the pristine SnS₂ NSs. The sensor also has the characteristics of short response time of 2 s, excellent base line recovery (28.2 s), long-term stability and reliability within 16 weeks, good selectivity and low detection concentration of only 50 ppb. The p-n heterojunction formed between the edge-exposed spherical MoS₂ and the 3D flower-like SnS₂ NSs has a synergistic effect, providing a highly active sites for the adsorption of NO₂ gas, which greatly enhance the sensitivity of the sensor. Simple fabrication and excellent gas sensing performance of the SnS₂/MoS₂ heterostructure nanomaterials (NMs) will highly effective for commercial gas sensing application.

Enhanced NO2 Sensitivity in Schottky-Contacted n-Type SnS2 Gas Sensors

Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors with high sensitivities especially in the parts per billion level is the main challenge in this rapidly developing field. Here, we show that sensitivity to NO₂ (S) can be greatly improved by at least two orders of magnitude using an n-type electrode metal. Unconventionally for such devices, the ln(S) follows the classic Langmuir isotherm model rather than S as is for a p-type electrode metal. Excellent device sensitivities, as high as 13,000% for 9 ppm and 97% for 1 ppb NO₂, are achieved with Mn electrodes at room temperature, which can be further tuned and enhanced with the application of a bias. Long-term stability, fast recovery, and strong selectivity toward NO₂ are also demonstrated. Such impressive features provide a real solution for designing a practical high-performance layered material-based gas sensor.

First-Principles Study for Gas Sensing of Defective SnSe2 Monolayers

We report the interaction between gas molecules (NO2 and NH3) and the SnSe2 monolayers with vacancy and dopants (O and N) for potential applications as gas sensors. Compared with the gas molecular adsorbed on pristine SnSe2 monolayer, the Se-vacancy SnSe2 monolayer obviously enhances sensitivity to NO2 adsorption. The O-doped SnSe2 monolayer shows similar sensitivity to the pristine SnSe2 monolayer when adsorbing NO2 molecule. However, only the N-doped SnSe2 monolayer represents a visible enhancement for NO2 and NH3 adsorption. This work reveals that the selectivity and sensitivity of SnSe2-based gas sensors could be improved by introducing the vacancy or dopants.

Controllable synthesis of an intercalated SnS2/aEG structure for enhanced NO2 gas sensing performance at room temperature

An intercalated SnS₂/aEG structure with abundant heterojunctions for enhanced NO₂ gas sensing performance at room temperature.