Electronic and optical properties of strained graphene and other strained 2D materials: a review

Enhanced electron transport and optical properties of experimentally synthesized monolayer Si9C15: a comprehensive DFT study for nanoelectronics and photocatalytic applications

Two-dimensional silicon-carbide (SixCy) materials stand out for their compatibility with current silicon-based technologies, offering unique advantages in nanoelectronics and photocatalysis. In this study, we employ density functional theory and nonequilibrium Green's function methods to investigate the electronic properties, electron transport characteristics, and optoelectronic qualities of experimentally synthesized monolayer Si9C15. Utilizing the modified deformation potential theory formula, we unveil Si9C15's significant directional anisotropy in electron mobility (706.42 cm2 V-1 s-1) compared to holes (432.84 cm2 V-1 s-1) in the a direction. The electrical transport calculations reveal that configurations with a 3 nm channel length demonstrate an ON state when biased, reaching a peak current of 150 nA. Moreover, this maximum current value escalates to 200 nA under tensile strain, marking an increase of approximately 100 times compared to the 5 nm channel, which remains in an OFF state. Si9C15 exhibits high light absorption coefficients (∼105 cm-1) and suitable band edge positions for water splitting at pH 0-7. Applying 1-5% tensile strain can tune the conduction band minimum and valence band maximum closer to the standard redox potentials, enhancing photocatalytic water splitting efficiency. Remarkably, under illumination at pH 0 and 7, Si9C15 can spontaneously catalyze water splitting, demonstrating its potential as a highly efficient photocatalyst. Our findings emphasize the importance of strain control and device length optimization for performance enhancement in nanoelectronics and renewable energy applications, positioning Si9C15 as a promising material for high-performance field-effect transistors and photocatalytic water splitting.

Carbon carrier-based rapid Joule heating technology: a review on the preparation and applications of functional nanomaterials

Compared to conventional heating techniques, the carbon carrier-based rapid Joule heating (CJH) method is a new class of technologies that offer significantly higher heating rates and ultra-high temperatures. Over the past few decades, CJH technology has spawned several techniques with similar principles for different application scenarios, including ultra-fast high temperature sintering (UHS), carbon thermal shock (CTS), and flash Joule heating (FJH), which have been widely used in material preparation research studies. Functional nanomaterials are a popular direction of research today, mainly including nanometallic materials, nanosilica materials, nanoceramic materials and nanocarbon materials. These materials exhibit unique physical, chemical, and biological properties, including a high specific surface area, strength, thermal stability, and biocompatibility, making them ideal for diverse applications across various fields. The CJH method is a remarkable approach to producing functional nanomaterials that has attracted attention for its significant advantages. This paper aims to delve into the fundamental principles of CJH and elucidate the efficient preparation of functional nanomaterials with superior properties using this technique. The paper is organized into three sections, each dedicated to introducing the process and characteristics of CJH technology for the preparation of three distinct material types: carbon-based nanomaterials, inorganic non-metallic materials, and metallic materials. We discuss the distinctions and merits of the CJH method compared to alternative techniques in the preparation of these materials, along with a thorough examination of their properties. Furthermore, the potential applications of these materials are highlighted. In conclusion, this paper concludes with a discussion on the future research trends and development prospects of CJH technology.

Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials

Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.

Acoustomagnonic Spin Hall Effect in Honeycomb Antiferromagnets

The recently discovered Van der Waals antiferromagnets have suffered from the lack of a comprehensive method to study their magnetic properties. Here, we propose an ac intrinsic magnon spin Hall current driven by surface acoustic waves as a novel probe for such antiferromagnets. Our results pave the way towards mechanical detection and manipulation of the magnetic order in two-dimensional antiferromagnets. Furthermore, they will overcome the difficulties with weak magnetic responses inherent in the use of antiferromagnets and hence provide a building block for future antiferromagnetic spintronics.

Toward the Production of Super Graphene

The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.

Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics

The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".

Mechanical Control of Quantum Transport in Graphene

2D materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain can completely turn off the conductance of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. This article reports measurements of quantum transport in strained graphene transistors which agree quantitatively with models based on mechanically-induced gauge potentials. A scalar potential is mechanically induced in situ to modify graphene's work function by up to 25 meV. Mechanically generated vector potentials suppress the ballistic conductance of graphene by up to 30% and control its quantum interferences. The data are measured with a custom experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6%). This work opens many opportunities to harness quantitative strain effects in 2DM quantum transport and technologies.

Single-layer graphene based resistive humidity sensor enhanced by graphene quantum dots

Graphene is broadly applied as sensitive sensing material results from its superb features. Concurrently, as a derivative of graphene with 0D structure, graphene quantum dots (GQDs) offer more possibilities as a supportive sensing material due to its adjustable size and functional group modification. In this work, GQDs are introduced to single-layer graphene (SLG) based humidity sensor to enhance the sensing performance. Specifically, consistent resistance response to relative humidity (RH) is extended from the range of 10%-60% to 10%-90% by contrary to original SLG based sensor. Parallelly, effect of the amount of GQDs is investigated by means of multiple GQDs deposition. As the resultant higher binding efficiency between water molecules and the functional groups of GQDs, improved response rate is observed. For the case of 4-time deposition of GQDs, the response rate (ΔR/R) reaches ∼130% in RH range of 10%-90%. Besides, the response time and recovery time are ∼0.7 s and ∼1.1 s, respectively. The fluctuation of the resistance change of the sensor under constant humidity is less than 5% over a month which demonstrates long-term reliability.

Anisotropic fluid flows in black phosphorus nanochannels

With the development of advanced micro/nanoscale technologies, two-dimensional materials have emerged from laboratories and have been applied in practice. To investigate the mechanisms of solid-liquid interactions in potential applications, molecular dynamics simulations are employed to study the flow behavior of n-dodecane (C12) molecules confined in black phosphorus (BP) nanochannels. Under the same external conditions, a significant difference in the velocity profiles of fluid molecules is observed when flowing along the armchair and zigzag directions of the BP walls. The average velocity of C12 molecules flowing along the zigzag direction is 9-fold higher than that along the armchair direction. The friction factor at the interface between C12 molecules and BP nanochannels and the orientations of C12 molecules near the BP walls are analyzed to explain the differences in velocity profiles under various flow directions, external driving forces, and nanochannel widths. The result shows that most C12 molecules are oriented parallel to the flow direction along the zigzag direction, leading to a relatively smaller friction factor hence a higher average velocity. In contrast, along the armchair direction, most C12 molecules are oriented perpendicular to the flow direction, leading to a relatively larger friction factor and thus a lower average velocity. This work provides important insights into understanding the anisotropic liquid flows in nanochannels.

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is noninvasive and nanoscale and can contribute to the investigation of time- and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.

Layer-Dependent Sensing Performance of WS2-Based Gas Sensors

Two-dimensional (2D) materials, such as tungsten disulfide (WS2), have attracted considerable attention for their potential in gas sensing applications, primarily due to their distinctive electrical properties and layer-dependent characteristics. This research explores the impact of the number of WS2 layers on the ability to detect gases by examining the layer-dependent sensing performance of WS2-based gas sensors. We fabricated gas sensors based on WS2 in both monolayer and multilayer configurations and methodically evaluated their response to various gases, including NO2, CO, NH3, and CH4 at room temperature and 50 degrees Celsius. In contrast to the monolayer counterpart, the multilayer WS2 sensor exhibits enhanced gas sensing performance at higher temperatures. Furthermore, a comprehensive gas monitoring system was constructed employing these WS2-based sensors, integrated with additional electronic components. To facilitate user access to data and receive alerts, sensor data were transmitted to a cloud-based platform for processing and storage. This investigation not only advances our understanding of 2D WS2-based gas sensors but also underscores the importance of layer engineering in tailoring their sensing capabilities for diverse applications. Additionally, the development of a gas monitoring system employing 2D WS2 within this study holds significant promise for future implementation in intelligent, efficient, and cost-effective sensor technologies.

Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update

This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.

Direct Observation of Propagating Spin Waves in the 2D van der Waals Ferromagnet Fe5GeTe2

Magnetism in reduced dimensionalities is of great fundamental interest while also providing perspectives for applications of materials with novel functionalities. In particular, spin dynamics in two dimensions (2D) have become a focus of recent research. Here, we report the observation of coherent propagating spin-wave dynamics in a ∼30 nm thick flake of 2D van der Waals ferromagnet Fe5GeTe2 using X-ray microscopy. Both phase and amplitude information were obtained by direct imaging below TC for frequencies from 2.77 to 3.84 GHz, and the corresponding spin-wave wavelengths were measured to be between 1.5 and 0.5 μm. Thus, parts of the magnonic dispersion relation were determined despite a relatively high magnetic damping of the material. Numerically solving an analytic multilayer model allowed us to corroborate the experimental dispersion relation and predict the influence of changes in the saturation magnetization or interlayer coupling, which could be exploited in future applications by temperature control or stacking of 2D-heterostructures.

Graphene-like emerging 2D materials: recent progress, challenges and future outlook

Owing to the unique physical and chemical properties of 2D materials and the great success of graphene in various applications, the scientific community has been influenced to explore a new class of graphene-like 2D materials for next-generation technological applications. Consequently, many alternative layered and non-layered 2D materials, including h-BN, TMDs, and MXenes, have been synthesized recently for applications related to the 4th industrial revolution. In this review, recent progress in state-of-the-art research on 2D materials, including their synthesis routes, characterization and application-oriented properties, has been highlighted. The evolving applications of 2D materials in the areas of electronics, optoelectronics, spintronic devices, sensors, high-performance and transparent electrodes, energy conversion and storage, electromagnetic interference shielding, hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and nanocomposites are discussed. In particular, the state-of-the-art applications, challenges, and outlook of every class of 2D material are also presented as concluding remarks to guide this fast-progressing class of 2D materials beyond graphene for scientific research into next-generation materials.

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ2 (A = Si, Ge; Z = P, As) monolayers

Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs2 and SZrGeAs2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP2 and SZrGeP2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs2 monolayer exhibits a hole mobility of up to 597.52 cm2 s-1 V-1 in the x-direction, whereas the SZrSiP2 monolayer demonstrates an electron mobility of up to 479.30 cm2 s-1 V-1 in the y-direction. In the x-direction, the electron mobility of SZrSiAs2 and SZrGeP2 monolayers was measured to be 189.88 and 528.44 cm2 s-1 V-1, respectively. These values are greater than or equivalent to that of experimentally synthesized MoS2 (∼200 cm2 s-1 V-1). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.

Strain-Induced Quasi-1D Channels in Twisted Moiré Lattices

We study the effects of strain in moiré systems composed of honeycomb lattices. We elucidate the formation of almost perfect one-dimensional moiré patterns in twisted bilayer systems. The formation of such patterns is a consequence of an interplay between twist and strain which gives rise to a collapse of the reciprocal space unit cell. As a criterion for such collapse we find a simple relation between the two quantities and the material specific Poisson ratio. The induced one-dimensional behavior is characterized by two, usually incommensurate, periodicities. Our results offer explanations for the complex patterns of one-dimensional channels observed in low angle twisted bilayer graphene systems and twisted bilayer dicalcogenides. Our findings can be applied to any hexagonal twisted moiré pattern and can be easily extended to other geometries.

Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic

Two-dimensional (2D) materials have aroused considerable research interest owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented extremely high anisotropy in physical properties. However, systematic research on structural stability of b-As is still lacking. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables, hydrostatic pressure and temperature. Our results confirmed that b-As can survive only below 0.7 GPa, and then irreversibly transforms to gray arsenic, consistent with our theoretical calculations. Furthermore, a thermal annealing strategy was developed to precisely control the thickness of the b-As flake, and it sublimates at 300 °C. These results could pave the way for 2D b-As in many promising applications.

X-ray dynamical diffraction by quasi-monolayer graphene

We study the processes of dynamical diffraction of the plane X-ray waves on the graphene film/SiC substrate system in the case of the Bragg diffraction geometry. The statistical dynamical theory of X-ray diffraction in imperfect crystals is applied to the case of real quasi-two-dimensional systems. The necessity of the taking into account of the variability of the lattice parameter of multilayer graphene, as well as the influence of thickness on the thermal Debye-Waller factor at the calculation of the complex structural factors and Fourier components of polarizability, is demonstrated. It is shown that the change of the structural characteristics of the 3-layer graphene/substrate system, as well as its strained state, leads to a significant change in the diffraction profiles, which makes it possible to determine the characteristics by the X-ray diffraction method.

Built-in tensile strain dependence on the lateral size of monolayer MoS2 synthesized by liquid precursor chemical vapor deposition

Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two-dimensional semiconductor, such as molybdenum disulfide, by employing different growth substrates with peculiar thermal properties. In this work, we demonstrate that the built-in strain of MoS2 monolayers, grown on a SiO2/Si substrate by liquid precursor chemical vapor deposition, is mainly dependent on the size of the monolayer. In fact, we identify a critical size equal to 20 μm, from which the built-in strain increases drastically. The built-in strain is the maximum for a 60 μm sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to the formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman mode separation can become unreliable for highly strained monolayers with a lateral size above 20 μm.

A Density Functional Theory (DFT) Perspective on Optical Absorption of Modified Graphene Interacting with the Main Amino Acids of Spider Silk

We investigated the possible adsorption of each of the main building blocks of spider silk: alanine, glycine, leucine, and proline. This knowledge could help develop new biocompatible materials and favors the creation of new biosensors. We used ab initio density functional theory methods to study the variations in the optical absorption, reflectivity, and band structure of a modified graphene surface interacting with these four molecules. Four modification cases were considered: graphene with vacancies at 5.55% and fluorine, nitrogen, or oxygen doping, also at 5.55%. We found that, among the cases considered, graphene with vacancies is the best candidate to develop optical biosensors to detect C=O amide and differentiate glycine and leucine from alanine and proline in the visible spectrum region. Finally, from the projected density of states, the main changes occur at deep energies. Thus, all modified graphene's electronic energy band structure undergoes only tiny changes when interacting with amino acids.

Influence of Solvents and Adsorption of Organic Molecules on the Properties of CVD Synthesized 2D MoS2

We present a simple method for modification of 2D materials by drop-casting of the organic molecule in solution on the 2D material under ambient conditions. Specifically, we investigated the adsorption of 6-(4,5-Dihydro-1H-imidazol-3-ium-2-yl)-2-(naphthalene-2-yl)benzothiazole methanesulfonate (L63MS) organic molecule on 2D MoS2. To better understand the effect of the organic molecule on the 2D material, we also investigated the impact of solvents alone on the materials' properties. The MoS2 samples were synthesized using ambient pressure chemical vapor deposition. Atomic force microscopy, Raman spectroscopy, photoluminescence spectroscopy and optical microscopy were used to characterize the samples. The measurements were performed after synthesis, after the drop-casting of solvents and after the drop-casting of organic molecule solutions. Our results indicate that the used organic molecule effectively adsorbs on and prompts discernible changes in the (opto)electronic properties of the 2D material. These changes encompass variations in the Raman spectra shape, alterations in the photoluminescence (PL) signal characteristics and modifications in excitonic properties. Such alterations can be linked to various phenomena including doping, bandgap modifications, introduction or healing of defects and that the solvent plays a crucial role in the process. Our study provides insights into the modification of 2D materials under ambient conditions and highlights the importance of solvent selection in the process.

Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers

Two-dimensional (2D) heterostructures have attracted a lot of attention due to their novel properties induced by the synergistic effects of the constituent building blocks. In this work, new lateral heterostructures (LHSs) formed by stitching germanene and AsSb monolayers are investigated. First-principles calculations assert the semimetal and semiconductor characters of 2D germanene and AsSb, respectively. The non-magnetic nature is preserved by forming LHSs along the armchair direction, where the band gap of the germanene monolayer can be increased to 0.87 eV. Meanwhile, magnetism may emerge in the zigzag-interline LHSs depending on the chemical composition. Such that, total magnetic moments up to 0.49 μ_B can be obtained, being produced mainly at the interfaces. The calculated band structures show either topological gap or gapless protected interface states, with quantum spin-valley Hall effects and Weyl semimetal characters. The results introduce new lateral heterostructures with novel electronic and magnetic properties, which can be controlled by the interline formation.

Vertical strain engineering of Van der Waals heterostructures

Van der Waals materials and their interfaces play critical roles in defining electrical contacts for nanoelectronics and developing vehicles for mechanoelectrical energy conversion. In this work, we propose a vertical strain engineering approach by enforcing pressure across the heterostructures. First-principles calculations show that the in-plane band structures of 2D materials such as graphene, h-BN, and MoS₂as well as the electronic coupling at their contacts can be significantly modified. For the graphene/h-BN contact, a band gap in graphene is opened, while at the graphene/MoS₂interface, the band gap of MoS₂and the Schottky barrier height at contact diminish. Changes and transitions in the nature of contacts are attributed to localized orbital coupling and analyzed through the redistribution of charge densities, the crystal orbital Hamilton population, and electron localization, which yield consistent measures. These findings offer key insights into the understanding of interfacial interaction between 2D materials as well as the efficiency of electronic transport and energy conversion processes.

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

Theory of quantized photonic spin Hall effect in strained graphene under a sub-Tesla external magnetic field

The quantized photonic spin Hall effect (PSHE) in the strained graphene-substrate system is predicted under a sub-Tesla external magnetic field, which is two orders of magnitude smaller than required to produce the quantized effect in the conventional graphene-substrate system. It is found that in-plane and transverse spin-dependent splittings in the PSHE, exhibit different quantized behaviors and are closely related to the reflection coefficients. Unlike the quantized PSHE in the conventional graphene-substrate system formed by the splitting of real Landau levels, the quantized PSHE in the strained graphene-substrate system is attributed to the splitting of pseudo-Landau levels caused by the pseudo-magnetic field and the lifting of valley degeneracy of the n ≠ 0 pseudo-Landau levels induced by the sub-Tesla external magnetic field. At the same time, the pseudo-Brewster angles of the system are also quantized with the change of Fermi energy. The sub-Tesla external magnetic field and the PSHE appear as quantized peak values near these angles. The giant quantized PSHE is expected to be used for direct optical measurements of the quantized conductivities and pseudo-Landau levels in the monolayer strained graphene.

Optimal twist angle for a graphene-like bilayer

The first optimal-or 'magic'-angle leading to the nullity of the Dirac/Fermi velocity for twisted bilayer graphene is re-evaluated in the Bistritzer-MacDonald set-up (Bistritzer and MacDonald 2011Proc. Natl Acad. Sci.10812233-7). From the details of that calculation we study the resulting alterations when the properties of the two layers are not exactly the same. A moiré combination of lattices without relative rotation but with different spacing lengths may also lead to a vanishing Dirac velocity. Hopping amplitudes can vary as well, and curvature is one of the possible causes for their change. In the case of small curvature values and situations dominated by hopping energy scales, the optimal angle becomes wider than in the 'flat' case.

In-situ atomic level observation of the strain response of graphene lattice

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility and mechanical stability at low temperature under UHV conditions. In this work, we have implemented a compact nanoindentation system with a size of [Formula: see text] 160 mm[Formula: see text] [Formula: see text] 5.2 mm in a scanning tunneling microscope (STM) sample holder, which enables the reversible control of strain and gate electric field. A combination of gearbox and piezoelectric actuator allowed us to modulate the depth of the indentation continuously with nanometer precision. The 2D materials were transferred onto the polyimide film. Pd clamp was used to enhance the strain transfer from the polyimide from to the 2D layers. Using this unique technique, strain response of graphene lattice were observed at atomic precision. In the relaxed graphene, strain is induced mainly by local curvature. However, in the strained graphene with tented structure, the lattice parameters become more sensitive to the indentor height change and stretching strain is increased additionally. Moreover, the gate controllability is confirmed by measuring the dependence of the STM tip height on gate voltage.

Strain engineering of hyperbolic plasmons in monolayer carbon phosphide: a first-principles study

Natural and tunable in-plane hyperbolic plasmons have so far been elusive, and hence few two-dimensional hyperbolic materials have been theoretically and experimentally discovered. Here, comprehensive first-principles calculations were conducted to study the electronic and plasmonic properties of biaxially strained monolayer carbon phosphide (β-CP). We found that (i) a compressed β-CP hosts strong anisotropic Dirac-shaped fermions with robust modulated Fermi velocity, (ii) for biaxial strain of -3% an unprecedented ultra-wide hyperbolic window is extended continuously from terahertz (9 THz) to mid-visible (blue light, 693 THz), (iii) the tunable optical Van Hove singularity as the origin of hyperbolic plasmons in deformed β-CP is disclosed, (iv) an elliptic to hyperbolic transition in the σ-near-zero regime is demonstrated in terahertz frequencies (9 THz), (v) the propagation angle of the concave wavefront can be actively tuned using biaxial strains, and (vi) hyperbolic dispersion reorientation from one principal axis to another orthogonal one under compressive strains larger than 8% is observed. This study sheds new light on the unique properties of hyperbolic two-dimensional (2D) materials having exotic optoelectronic characteristics which are promising candidates for anisotropic light control with ultimate dexterity in the flat optics.

NFRHT modulation between graphene/SiC core-shell and hBN plate through strain

We numerically investigate the near-field radiative heat transfer (NFRHT) between a graphene/SiC core-shell (GSCS) nanoparticle and a hexagonal boron nitride (hBN) plate. By applying a compressive strain to the hBN plate, its hyperbolic modes can be tuned. Consequently, the hyperbolic phonon polaritons (HPPs) of hBN and the high-frequency localized surface resonance (LSR) of GSCS nanoparticle can couple and decouple, thus allowing for the active control of NFRHT. Furthermore, we predict that, combining with the effect of the chemical potential of graphene shell on NFRHT, a thermal rectification ratio of up to 13.6 can be achieved. This work enriches the phonon-polariton coupling mechanism and also facilitates dynamic thermal management at the nanoscale.

Interface contact and modulated electronic properties by in-plain strains in a graphene-MoS2 heterostructure

Designing a specific heterojunction by assembling suitable two-dimensional (2D) semiconductors has shown significant potential in next-generation micro-nano electronic devices. In this paper, we study the structural and electronic properties of graphene-MoS₂ (Gr-MoS₂) heterostructures with in-plain biaxial strain using density functional theory. It is found that the interaction between graphene and monolayer MoS₂ is characterized by a weak van der Waals interlayer coupling with the stable layer spacing of 3.39 Å and binding energy of 0.35 J m^-2. In the presence of MoS₂, the linear bands on the Dirac cone of graphene are slightly split. A tiny band gap about 1.2 meV opens in the Gr-MoS₂ heterojunction due to the breaking of sublattice symmetry, and it could be effectively modulated by strain. Furthermore, an n-type Schottky contact is formed at the Gr-MoS₂ interface with a Schottky barrier height of 0.33 eV, which can be effectively modulated by in-plane strain. Especially, an n-type ohmic contact is obtained when 6% tensile strain is imposed. The appearance of the non-zero band gap in graphene has opened up new possibilities for its application and the ohmic contact predicts the Gr-MoS₂ van der Waals heterojunction nanocomposite as a competitive candidate in next-generation optoelectronics and Schottky devices.

Tunable biaxial strain device for low-dimensional materials

Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain, often with a trade-off between maximum strain and uniformity, reversibility, and device size. We present a compact device that allows for the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS₂ to strain by Raman spectroscopy.

Quantum tailoring of electronic properties in covalently functionalized graphene: application to ammonia gas detection

Functionalized graphene offers great potential in the field of rapid detection of gases at room temperature. We performed first-principles calculations to study the suitability of 4-sulfobenzenediazonium salts (4SBD) as bandgap modifier in graphene. The signature of unpaired spins is evidenced near the Fermi level owing to the symmetry breaking of graphene sublattices. 4SBD-chemisorbed on graphene is found to be electronically sensitive to the presence of ammonia NH₃ with increasing gas concentration.

AuNPs and 2D functional nanomaterial-assisted SPR development for the cancer detection: a critical review

Cancer ranks as a leading cause of death and a huge obstacle to rising life expectancy. If cancers are spotted early there's a high chance of survival. The conventional methods relying on the phenotypic features of the tumor are not powerful to the early screening of cancer. Cancer biomarkers are capable of indicating specific cancer states. Current biochemical assay suffers from time and reagents consuming and discontinuous monitoring. Surface plasmon resonance (SPR) technology, a refractive index-based optical biosensor, has significant promise in biomarker detection because of its outstanding features of label-free, sensitivity, and reliability. The nanomaterial features exotic physical and chemical property work on the process of transferring biorecognition event into SPR signal and hence is functioned as signal enhancer. In this review, we mainly discussed the mechanism of gold nanoparticles (AuNPs) and two-dimensional (2D) functional nanomaterial for improving the SPR signal. We also introduced AuNPs and 2D nanomaterial assisted SPR technology in determining cancer biomarker. Last but not least, we discussed the challenges and outlooks of the aforementioned reformative SPR technology for cancer biomarker determination in the clinical trial.

Topological lattices realized in superconducting circuit optomechanics

Cavity optomechanics enables the control of mechanical motion through the radiation-pressure interaction¹, and has contributed to the quantum control of engineered mechanical systems ranging from kilogramme-scale Laser Interferometer Gravitational-wave Observatory (LIGO) mirrors to nanomechanical systems, enabling ground-state preparation^2,3, entanglement^4,5, squeezing of mechanical objects⁶, position measurements at the standard quantum limit⁷ and quantum transduction⁸. Yet nearly all previous schemes have used single- or few-mode optomechanical systems. By contrast, new dynamics and applications are expected when using optomechanical lattices⁹, which enable the synthesis of non-trivial band structures, and these lattices have been actively studied in the field of circuit quantum electrodynamics¹⁰. Superconducting microwave optomechanical circuits² are a promising platform to implement such lattices, but have been compounded by strict scaling limitations. Here we overcome this challenge and demonstrate topological microwave modes in one-dimensional circuit optomechanical chains realizing the Su-Schrieffer-Heeger model^11,12. Furthermore, we realize the strained graphene model^13,14 in a two-dimensional optomechanical honeycomb lattice. Exploiting the embedded optomechanical interaction, we show that it is possible to directly measure the mode functions of the hybridized modes without using any local probe^15,16. This enables us to reconstruct the full underlying lattice Hamiltonian and directly measure the existing residual disorder. Such optomechanical lattices, accompanied by the measurement techniques introduced, offer an avenue to explore collective^17,18, quantum many-body¹⁹ and quench²⁰ dynamics, topological properties^9,21 and, more broadly, emergent nonlinear dynamics in complex optomechanical systems with a large number of degrees of freedom^22-24.

Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS2/Graphene Heterojunction Bubbles

Two-dimensional (2D) material bubbles, as a straightforward method to induce strain, represent a potentially powerful platform for the modulation of different properties of 2D materials and the exploration of their strain-related applications. Here, we prepare ReS₂/graphene heterojunction bubbles (ReS₂/gr heterobubbles) and investigate their strain and interference synergistically modulated optical and electrical properties. We perform Raman and photoluminescence (PL) spectra to verify the continuously varying strain and the microcavity induced optical interference in ReS₂/gr heterobubbles. Kelvin probe force microscopy (KPFM) is carried out to explore the photogenerated carrier transfer behavior in both strained ReS₂/gr heterobubbles and ReS₂/gr interfaces, as well as the oscillation of surface potential caused by optical interference under illumination conditions. Moreover, the switching of in-plane crystal orientation and the modulation of optical anisotropy of ReS₂/gr heterobubbles are observed by azimuth-dependent reflectance difference microscopy (ADRDM), which can be attributed to the action of both strain effect and interference. Our study proves that the optical and electrical properties can be effectively modulated by the synergistical effect of strain and interference in a 2D material bubble.

Interfacial friction of vdW heterostructures affected by in-plane strain

Interfacial properties of van der Waals (vdW) heterostructures dominate the durability and function of their booming practical and potential applications such as opoelectronic devices, superconductors and even pandemics research. However, the strain engineering modulates of interlayer friction of vdW heterostructures consisting of two distinct materials are still unclear, which hinders the applications of vdW heterostructures, as well as the design of solid lubricant and robust superlubricity. In the present paper, a molecular model between a hexagonal graphene flake and a rectangular SLMoS₂sheet is established, and the influence of biaxial and uniaxial strain on interlayer friction is explored by molecular dynamics. It is found that the interlayer friction is insensitive to applied strains. Strong robustness of superlubricity between distinct layers is owed to the structure's intrinsic incommensurate characteristics and the existence of Moiré pattern. In engineering practice, it is of potential importance to introduce two distinct 2D materials at the sliding contact interface to reduce the interfacial friction of the contact pair and serve as ideal solid lubricants. Our research provides a further basis to explore the nanotribology and strain engineering of 2D materials and vdW heterostructures.

First-principles study on the structural properties of 2D MXene SnSiGeN4 and its electronic properties under the effects of strain and an external electric field

The MXene SnSiGeN₄ monolayer as a new member of the MoSi₂N₄ family was proposed for the first time, and its structural and electronic properties were explored by applying first-principles calculations with both PBE and hybrid HSE06 approaches. The layered hexagonal honeycomb structure of SnSiGeN₄ was determined to be stable under dynamical effects or at room temperature of 300 K, with a rather high cohesive energy of 7.0 eV. The layered SnSiGeN₄ has a Young's modulus of 365.699 N m^-1 and a Poisson's ratio of 0.295. The HSE06 approach predicted an indirect band gap of around 2.4 eV for the layered SnSiGeN₄. While the major donation from the N-p orbitals to the band structure makes SnSiGeN₄'s band gap close to those of similar 2D MXenes, the smaller distributions from the other orbitals of Sn, Si, and Ge slightly vary this band gap. The work functions of the GeN and SiN surfaces are 6.367 eV and 5.903 eV, respectively. The band gap of the layered SnSiGeN₄ can be easily tuned by strain and an external electric field. A semiconductor-metal transition can occur at certain values of strain, and with an electric field higher than 5 V nm^-1. The electron mobility of the layered SnSiGeN₄ can reach up to 677.4 cm² V^-1 s^-1, which is much higher than the hole mobility of about 52 cm² V^-1 s^-1. The mentioned characteristics make the layered SnSiGeN₄ a very promising material for use in electronic and photoelectronic devices, and for solar energy conversion.

Strain-induced thermoelectricity in pentacene

The present work discusses a non-synthetic strategy to achieve a favorable thermoelectric response in pentacene via strain. It is found that a uni-axial strain is capable of inducing spatial anisotropy in the molecule. As a result, the transmission spectrum becomes highly asymmetric under a particular strained scenario, which is the primary requirement to get a favorable thermoelectric response. Different thermoelectric quantities are computed for the strain-induced pentacene using Green's function formalism following the Landauer-Büttiker prescription. Various scenarios are considered to make the present work more realistic, such as the effects of substrate, coupling strength between the molecule and electrodes, dangling bonds, etc. Such a scheme to enhance the thermoelectric performance in pentacene is technologically intriguing and completely new to the best of our knowledge.

Far-field thermal radiation properties of graphene under uniaxial strain

Electronic band structure and optical conductivity of single-layer graphene could be altered by applied uniaxial strain. Valley and space inversion symmetries are broken. Dirac cones are deformed. We investigate the effect of uniaxial strain on the radiative properties of graphene from the perspective of direction and modulus. Optical conductivity exhibits wealthy phenomenon due to the degeneracy of the energy band broken by strain. The total energy radiation exhibits a novel behavior of periodicity inθ, in accordance with the symmetry of the hexagonal honeycomb lattice.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2 /SnS Heterostructures

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertaining to their properties and interactions. One such gap is the interaction between these materials and hydrogen, a potentially vital future energy vector and ubiquitous processing gas in the semiconductor industry. This work reports on the interaction of hydrogen with the vdW semiconductor SnS₂ , where molecular hydrogen (H₂ ) and H-ions induce a controlled chemical conversion into semiconducting-SnS or to β-Sn. This hydrogen-driven reaction is facilitated by the different oxidation states of Sn and is successfully applied to form SnS₂ /SnS heterostructures with uniform layers, atomically flat interfaces and well-aligned crystallographic axes. This approach is scalable and offers a route for engineering materials at the nanoscale for semiconductor technologies based on the earth-abundant elements Sn and S, a promising result for a wide range of potential applications.

Mechanisms of Quasi van der Waals Epitaxy of Three-Dimensional Metallic Nanoislands on Suspended Two-Dimensional Materials

Understanding structure at the interface between two-dimensional (2D) materials and 3D metals is crucial for designing novel 2D/3D heterostructures and improving the performance of many 2D material devices. Here, we quantify and discuss the 2D/3D interface structure and the 3D morphology in several materials systems. We first deposit faceted Au nanoislands on graphene and transition metal dichalcogenides, using measurements of the equilibrium island shape to determine values for the 2D/Au interface energy and examining the role of surface reconstructions, chemical identity, and defects on the grown structures. We then deposit the technologically relevant metals Ti and Nb under conditions where kinetic rather than thermodynamic factors govern growth. We describe a transition from dendritic to faceted islands as a function of growth temperature and discuss the factors determining island shape in these materials systems. Finally, we show that suspended 2D materials enable the fabrication of a novel type of 3D/2D/3D heterostructure and discuss the growth mechanism. We suggest that emerging nanodevices will utilize versatile fabrication of 2D/3D heterostructures with well-characterized interfaces and morphologies.

Electronic, transport, magnetic and optical properties of graphene nanoribbons review

Low dimensional materials have attracted great research interest from both theoretical and experimental point of view. These materials exhibit novel physical and chemical properties due to the confinement effect in low dimensions. The experimental observations of graphene open a new platform to study the physical properties of materials restricted to two dimensions. This featured article provides a review on the novel properties of quasi one-dimensional (1D) material known as graphene nanoribbon. Graphene nanoribbons can be obtained by unzipping carbon nanotubes (CNTs) or cutting the graphene sheet. Alternatively, it is also called the finite termination of graphene edges. It gives rise different edge geometries namely zigzag and armchair among others. There are various physical and chemical techniques to realize these materials. Depending on the edge type termination, these are called the zigzag and armchair graphene nanoribbons (ZGNR and AGNR). These edges play an important role in controlling the properties of graphene nanoribbons. The present review article provides an overview of the electronic, transport, optical and magnetic properties of graphene nanoribbons. However, there are different ways to tune these properties for device applications. Here, some of them are highlighted such as external perturbations and chemical modifications. Few applications of graphene nanoribbon have and chemical modifications. Few applications of graphene nanoribbon have also been briefly discussed.

High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect- and strain-induced single-photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach for creating large areas of localized emitters with high density (∼150 emitters/um²) in a WSe₂ monolayer. We induce strain inside the WSe₂ monolayer with high spatial density by conformally placing the WSe₂ monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters will be applied to scalable, tunable, and versatile quantum light sources.

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in nonlocal experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields. The superposition of a synthetic Hall potential and a conventional Hall voltage can annihilate the sample's transverse potential at large external magnetic fields. Surface acoustic waves thus provide a promising and facile avenue for the exploitation of gauge fields in large planar graphene systems.

Solid-State Reaction Synthesis of Nanoscale Materials: Strategies and Applications

Nanomaterials (NMs) with unique structures and compositions can give rise to exotic physicochemical properties and applications. Despite the advancement in solution-based methods, scalable access to a wide range of crystal phases and intricate compositions is still challenging. Solid-state reaction (SSR) syntheses have high potential owing to their flexibility toward multielemental phases under feasibly high temperatures and solvent-free conditions as well as their scalability and simplicity. Controlling the nanoscale features through SSRs demands a strategic nanospace-confinement approach due to the risk of heat-induced reshaping and sintering. Here, we describe advanced SSR strategies for NM synthesis, focusing on mechanistic insights, novel nanoscale phenomena, and underlying principles using a series of examples under different categories. After introducing the history of classical SSRs, key theories, and definitions central to the topic, we categorize various modern SSR strategies based on the surrounding solid-state media used for nanostructure growth, conversion, and migration under nanospace or dimensional confinement. This comprehensive review will advance the quest for new materials design, synthesis, and applications.

Role of defects in the mechanical properties of graphene-copper heterostructures

Through molecular dynamics simulations of tensile tests, the role that vacancies and Stone-Wales defects play in the mechanical properties of sandwich-like heterostructures, composed by graphene and two symmetric copper layers at nanoscale, is studied. The dependence on the armchair and zigzag chiralities of the graphene layer is also investigated. During elastic deformation, defects negatively affect the mechanical response. However, defective systems can show an improvement of the plastic properties. Vacancies have a stronger impact compared to Stone-Wales defects. Elasticity, toughness, and ductility are enhanced along the zigzag chirality, while stiffness is improved along the armchair direction. The Poisson's ratio was calculated for all graphene-copper heterostructures. At a critical strain it becomes negative along the thickness direction, preserving the auxetic property at higher strains. In general, the behavior is governed by the graphene response. Our findings can be useful to understand the strengthening mechanism induced by this two-dimensional material in metals like copper and for the design of similar systems.

Holey and Wrinkled Flash Graphene from Mixed Plastic Waste

High surface area varieties of graphene have captured significant attention, allowing for improved performance in a variety of applications. However, there are challenges facing the use of graphene in these applications since it is expensive and difficult to synthesize in bulk. Here, we leverage the capabilities of flash Joule heating to synthesize holey and wrinkled flash graphene (HWFG) in seconds from mixed plastic waste feedstocks, using in situ salt decomposition to produce and stabilize pore formation during the reaction. Surface areas as high as 874 m² g^-1 are obtained, with characteristics of micro-, meso-, and macroporosities. Raman spectroscopy confirms the wrinkled and turbostratic nature of the HWFG. We demonstrate HWFG applications in its use as a metal-free hydrogen evolution reaction electrocatalyst, with excellent stability, competitive overpotential, and Tafel slope; in a Li-metal battery anode allowing for stable and high discharge rates; and in a material with high gas adsorption. This represents an upcycle of mixed plastic waste, thereby affording a valuable route to address this pressing environmental pollutant concern.

Array of Graphene Variable Capacitors on 100 mm Silicon Wafers for Vibration-Based Applications

Highly flexible, electrically conductive freestanding graphene membranes hold great promise for vibration-based applications. This study focuses on their integration into mainstream semiconductor manufacturing methods. We designed a two-mask lithography process that creates an array of freestanding graphene-based variable capacitors on 100 mm silicon wafers. The first mask forms long trenches terminated by square wells featuring cone-shaped tips at their centers. The second mask fabricates metal traces from each tip to its contact pad along the trench and a second contact pad opposite the square well. A graphene membrane is then suspended over the square well to form a variable capacitor. The same capacitor structures were also built on 5 mm by 5 mm bare dies containing an integrated circuit underneath. We used atomic force microscopy, optical microscopy, and capacitance measurements in time to characterize the samples.

Controllable photonic spin hall effect of bilayer graphene

Bilayer graphene, composed of two layers of monolayer graphene in AB stacking order, has emerged as an alternative platform for atomically thin plasmonic and optoelectronic devices. However, its behavior of photonic spin hall effect remains largely unexplored. In this work, we have theoretically observed that bilayer graphene has two obvious discontinuities but monolayer graphene only has a single step in the spectra of the spin shifts as a function of wavelength at the Brewster angle over the midinfrared frequency range, which enables a possible route of distinguishing monolayer graphene and bilayer graphene. Additionally, the magnitudes and positions of the peak and valley values in the spectrum of spin shifts of bilayer graphene can be tuned by its Fermi energy. We also achieved the enhanced out-of-pane spin shift of the glass-AB stacking bilayer graphene-air structure at both the Brewster angle (33.55°) and the critical angle (41.31°) with the aid of the high order of Laguerre-Gaussian beam. The realization of large and controlled spin shift in bilayer graphene indicates its promising applications in precision measurements and refractive index sensors at the midinfrared frequency region.