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Tao LL, Zhang Q, Li H, Zhao HJ, Wang X, Song B, Tsymbal EY, Bellaiche L. Layer Hall Detection of the Néel Vector in Centrosymmetric Magnetoelectric Antiferromagnets. PHYSICAL REVIEW LETTERS 2024; 133:096803. [PMID: 39270175 DOI: 10.1103/physrevlett.133.096803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Accepted: 07/23/2024] [Indexed: 09/15/2024]
Abstract
The efficient detection of the Néel vector in antiferromagnets is one of the prerequisites toward antiferromagnetic spintronic devices and remains a challenging problem. Here, we propose that the layer Hall effect can be used to efficiently detect the Néel vector in centrosymmetric magnetoelectric antiferromagnets. Thanks to the robust surface magnetization of magnetoelectric antiferromagnets, the combination of sizable exchange field and an applied electric field results in the layer-locked spin-polarized band edges. Moreover, the Berry curvature can be engineered efficiently by an electric field, which consequently gives rise to the layer-locked Berry curvature responsible for the layer Hall effect. Importantly, it is demonstrated that the layer Hall conductivity strongly depends on the Néel vector orientation and exhibits rich electromagnetic responses, which can be used to detect the Néel vector reversal. Based on density functional theory calculations, we exemplify those phenomena in the prototypical Cr_{2}O_{3} compound. A complete list of the magnetic point groups sustaining the layer Hall effect is presented, aiding the search for realistic materials. Our work proposes a novel approach to detect the Néel vector and holds great promise for antiferromagnetic spintronic applications.
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Affiliation(s)
| | | | | | - Hong Jian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun 130012, China
- International Center of Future Science, Jilin University, Changchun 130012, China
| | | | | | | | - Laurent Bellaiche
- Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
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2
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Zhou C, Zhou J. Light-Induced Topological Phase Transition with Tunable Layer Hall Effect in Axion Antiferromagnets. NANO LETTERS 2024. [PMID: 38848333 DOI: 10.1021/acs.nanolett.4c01415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2024]
Abstract
The intricate interplay between light and matter provides effective tools for manipulating topological phenomena. Here, we theoretically propose and computationally show that circularly polarized light holds the potential to transform the axion insulating phase into a quantum anomalous Hall state in MnBi2Te4 thin films, featuring tunable Chern numbers (ranging up to ±2). In particular, we reveal the spatial rearrangement of the hidden layer-resolved anomalous Hall effect under light-driven Floquet engineering. Notably, upon Bi2Te3 layer intercalation, the anomalous Hall conductance predominantly localizes in the nonmagnetic Bi2Te3 layers that hold zero Berry curvature in the intact state, suggesting a significant magnetic proximity effect. Additionally, we estimate variations in the magneto-optical Kerr effect, giving a contactless method for detecting topological transitions. Our work not only presents a strategy to investigate emergent topological phases but also sheds light on the possible applications of the layer Hall effect in topological antiferromagnetic spintronics.
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Affiliation(s)
- Cong Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
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3
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Li S, Gong M, Li YH, Jiang H, Xie XC. High spin axion insulator. Nat Commun 2024; 15:4250. [PMID: 38762497 PMCID: PMC11102527 DOI: 10.1038/s41467-024-48542-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2023] [Accepted: 05/03/2024] [Indexed: 05/20/2024] Open
Abstract
Axion insulators possess a quantized axion field θ = π protected by combined lattice and time-reversal symmetry, holding great potential for device applications in layertronics and quantum computing. Here, we propose a high-spin axion insulator (HSAI) defined in large spin-s representation, which maintains the same inherent symmetry but possesses a notable axion field θ = (s + 1/2)2π. Such distinct axion field is confirmed independently by the direct calculation of the axion term using hybrid Wannier functions, layer-resolved Chern numbers, as well as the topological magneto-electric effect. We show that the guaranteed gapless quasi-particle excitation is absent at the boundary of the HSAI despite its integer surface Chern number, hinting an unusual quantum anomaly violating the conventional bulk-boundary correspondence. Furthermore, we ascertain that the axion field θ can be precisely tuned through an external magnetic field, enabling the manipulation of bonded transport properties. The HSAI proposed here can be experimentally verified in ultra-cold atoms by the quantized non-reciprocal conductance or topological magnetoelectric response. Our work enriches the understanding of axion insulators in condensed matter physics, paving the way for future device applications.
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Affiliation(s)
- Shuai Li
- School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
- Institute for Advanced Study, Soochow University, Suzhou, 215006, China
| | - Ming Gong
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Yu-Hang Li
- School of Physics, Nankai University, Tianjin, 300071, China.
| | - Hua Jiang
- Institute for Advanced Study, Soochow University, Suzhou, 215006, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China.
- Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University, Shanghai, 200433, China.
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
- Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University, Shanghai, 200433, China
- Hefei National Laboratory, Hefei, 230088, China
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4
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Shan WY. Gate-tunable circular phonon dichroism effect in bilayer graphene. iScience 2024; 27:109374. [PMID: 38510119 PMCID: PMC10951653 DOI: 10.1016/j.isci.2024.109374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2023] [Revised: 01/30/2024] [Accepted: 02/27/2024] [Indexed: 03/22/2024] Open
Abstract
Circular phonon dichroism effect has been proposed in two-dimensional materials; however, the lack of tunability hinders the exploration of the effect. Here, we investigate the role of dual-gating-induced inversion symmetry breaking in the circular phonon dichroism effect in bilayer graphene. We find that the introduction of inversion symmetry breaking modifies the response in the layer-symmetric and layer-antisymmetric channels, and results in the occurrence of phonon dichroism in the cross-channel. In the layer representation, the inversion symmetry breaking breaks the equality of intralayer circular phonon dichroism and enhances the interlayer response. Our results suggest that layer degree of freedom provides possibilities to tune phonon dynamics, which paves a way toward different physics and applications of two-dimensional acoustoelectronics and layertronics.
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Affiliation(s)
- Wen-Yu Shan
- Department of Physics, School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
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5
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Feng J, Zhou X, Xu M, Shi J, Li Y. Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets. NANO LETTERS 2024; 24:3898-3905. [PMID: 38525906 DOI: 10.1021/acs.nanolett.3c05052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer antiferromagnets (AFMs), we propose a layer control of MOE (L-MOE), which is created and annihilated by layer-stacking or an electric field effect. The key character of L-MOE is the sign-reversible response controlled by ferroelectric polarization, the Néel vector, or the electric field direction. Moreover, the sign-reversible L-MOE can be quantized in topologically insulating AFMs. We reveal that the switchable L-MOE originates from the combined contributions of spin-conserving and spin-flip interband transitions in spin-valley splitting AFMs, a phenomenon not observed in conventional AFMs. Our findings bridge the ancient MOE to the emergent realms of layertronics, valleytronics, and multiferroics and may hold immense potential in these fields.
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Affiliation(s)
- Jiaqi Feng
- Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - Xiaodong Zhou
- Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - Meiling Xu
- Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - Jingming Shi
- Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - Yinwei Li
- Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
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Liu Y, Feng Y, Dai Y, Huang B, Ma Y. Engineering Layertronics in Two-Dimensional Ferromagnetic Multiferroic Lattice. NANO LETTERS 2024; 24:3507-3514. [PMID: 38445582 DOI: 10.1021/acs.nanolett.4c00436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Layertronics, rooted in the layer Hall effect (LHE), is an emerging fundamental phenomenon in condensed matter physics and spintronics. So far, several theoretical and experimental proposals have been made to realize LHE, but all are based on antiferromagnetic systems. Here, using symmetry and tight-binding model analysis, we propose a general mechanism for engineering layertronics in a two-dimensional ferromagnetic multiferroic lattice. The physics is related to the band geometric properties and multiferroicity, which results in the coupling between Berry curvature and layer degree of freedom, thereby generating the LHE. Using first-principles calculations, we further demonstrate this mechanism in bilayer (BL) TcIrGe2S6. Due to the intrinsic inversion and time-reversal symmetry breakings, BL TcIrGe2S6 exhibits multiferroicity with large Berry curvatures at both the center and corners of the Brillouin zone. These Berry curvatures couple with the layer physics, forming the LHE in BL TcIrGe2S6. Our work opens a new direction for research on layertronics.
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Affiliation(s)
- Yibo Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China
| | - Yangyang Feng
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China
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7
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Zhang T, Xu X, Guo J, Dai Y, Ma Y. Layer-Polarized Anomalous Hall Effects from Inversion-Symmetric Single-Layer Lattices. NANO LETTERS 2024; 24:1009-1014. [PMID: 38214894 DOI: 10.1021/acs.nanolett.3c04597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
In the field of physics and materials science, the discovery of the layer-polarized anomalous Hall effect (LP-AHE) stands as a crucial development. The current research paradigm is rooted in topological or inversion-asymmetric valleytronic systems, making such a phenomenon rather rare. In this work, a universal design principle for achieving the LP-AHE from inversion-symmetric single-layer lattices is proposed. Through tight-binding model analysis, we demonstrate that by stacking into antiferromagnetic van der Waals bilayer lattices, the coupling physics between PT symmetry and vertical external bias can be realized. This coupling reveals the previously neutralized layer-locked Berry curvature, compelling the carriers to move in a specific direction within a given layer, thereby realizing the LP-AHE. Intriguingly, the chirality of the LP-AHE can be effectively switched by modulating the direction of vertical external bias. First-principles calculations validate this mechanism in bilayer T-FeCl2 and MnPSe3. Our results pave the way for new explorations of the LP-AHE.
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Affiliation(s)
- Ting Zhang
- School of Physics and Technology, University of Jinan, Jinan 250022, People's Republic of China
| | - Xilong Xu
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Jinghua Guo
- School of Physics and Technology, University of Jinan, Jinan 250022, People's Republic of China
| | - Ying Dai
- School of Physics, Shandong University, Jinan 250100, People's Republic of China
| | - Yandong Ma
- School of Physics, Shandong University, Jinan 250100, People's Republic of China
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8
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Liang W, Zeng J, Qiao Z, Gao Y, Niu Q. Berry-Curvature Engineering for Nonreciprocal Directional Dichroism in Two-Dimensional Antiferromagnets. PHYSICAL REVIEW LETTERS 2023; 131:256901. [PMID: 38181334 DOI: 10.1103/physrevlett.131.256901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 10/02/2023] [Accepted: 11/17/2023] [Indexed: 01/07/2024]
Abstract
In two-dimensional antiferromagnets, we find that the mixed Berry curvature can be attributed as the geometrical origin of the nonreciprocal directional dichroism (NDD), which refers to the difference in light absorption between opposite propagation directions. This Berry curvature is closely related to the uniaxial strain in accordance with the symmetry constraint, leading to a highly tunable NDD, whose sign and strength can be tuned via strain direction. We choose the lattice model of MnBi_{2}Te_{4} as a concrete example. The coupling between mixed Berry curvature and strain also suggests the magnetic quadrupole of the Bloch wave packet as the macroscopic order parameter probed by the NDD in two dimensions, which is distinct from the multiferroic order P×M or the spin toroidal and quadrupole order within a unit cell in previous studies. Our work paves the way for the Berry-curvature engineering for optical nonreciprocity in two-dimensional antiferromagnets.
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Affiliation(s)
- Wenhao Liang
- International Centre for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Junjie Zeng
- Institute for Structure and Function, Department of Physics, and Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 400044, China
| | - Zhenhua Qiao
- International Centre for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Yang Gao
- International Centre for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Qian Niu
- International Centre for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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9
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Cao T, Shao DF, Huang K, Gurung G, Tsymbal EY. Switchable Anomalous Hall Effects in Polar-Stacked 2D Antiferromagnet MnBi 2Te 4. NANO LETTERS 2023; 23:3781-3787. [PMID: 37115910 DOI: 10.1021/acs.nanolett.3c00047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
van der Waals (vdW) assembly of two-dimensional (2D) materials allows polar layer stacking to realize novel properties switchable by the induced electric polarization. Here, based on symmetry analyses and density-functional calculations, we explore the emergence of the anomalous Hall effect (AHE) in antiferromagnetic MnBi2Te4 films assembled by polar layer stacking. We demonstrate that breaking P̂T̂ symmetry in an MnBi2Te4 bilayer produces a magnetoelectric effect and a spontaneous AHE switchable by electric polarization. We find that reversible polarization at one of the interfaces in a three-layer MnBi2Te4 film drives a metal-insulator transition, as well as switching between the AHE and quantum AHE (QAHE). Finally, we predict that engineering interlayer polarization in a three-layer MnBi2Te4 film allows converting MnBi2Te4 from a trivial insulator to a Chern insulator. Overall, our work emphasizes the topological properties in 2D vdW antiferromagnets induced by polar layer stacking, which do not exist in a bulk material.
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Affiliation(s)
- Tengfei Cao
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States
| | - Ding-Fu Shao
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States
| | - Kai Huang
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States
| | - Gautam Gurung
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States
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10
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Li X, Xu X, Zhou H, Jia H, Wang E, Fu H, Sun JT, Meng S. Tunable Topological States in Stacked Chern Insulator Bilayers. NANO LETTERS 2023; 23:2839-2845. [PMID: 36975717 DOI: 10.1021/acs.nanolett.3c00154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The emergence of intrinsic quantum anomalous Hall (QAH) insulators with a long-range ferromagnetic (FM) order triggers unprecedented prosperity for combining topology and magnetism in low dimensions. Built upon atom-thin Chern insulator monolayer MnBr3, we propose that the topologically nontrivial electronic states can be systematically tuned by inherent magnetic orders and external electric/optical fields in stacked Chern insulator bilayers. The FM bilayer illustrates a high-Chern-number QAH state characterized by both quantized Hall plateaus and specific magneto-optical Kerr angles. In antiferromagnetic bilayers, Berry curvature singularity induced by electrostatic fields or lasers emerges, which further leads to a novel implementation of the layer Hall effect depending on the chirality of irradiated circularly polarized light. These results demonstrate that abundant tunable topological properties can be achieved in stacked Chern insulator bilayers, thereby suggesting a universal routine to modulate d-orbital-dominated topological Dirac fermions.
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Affiliation(s)
- Xuanyi Li
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Xifan Xu
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing 401331, China
- Department of Physics and Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 401331, China
| | - Hui Zhou
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Huaxian Jia
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - En Wang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Huixia Fu
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing 401331, China
- Department of Physics and Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 401331, China
| | - Jia-Tao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Sheng Meng
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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Zhai D, Chen C, Xiao C, Yao W. Time-reversal even charge hall effect from twisted interface coupling. Nat Commun 2023; 14:1961. [PMID: 37029110 PMCID: PMC10082030 DOI: 10.1038/s41467-023-37644-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Accepted: 03/22/2023] [Indexed: 04/09/2023] Open
Abstract
Under time-reversal symmetry, a linear charge Hall response is usually deemed to be forbidden by the Onsager relation. In this work, we discover a scenario for realizing a time-reversal even linear charge Hall effect in a non-isolated two-dimensional crystal allowed by time reversal symmetry. The restriction by Onsager relation is lifted by interfacial coupling with an adjacent layer, where the overall chiral symmetry requirement is fulfilled by a twisted stacking. We reveal the underlying band geometric quantity as the momentum-space vorticity of layer current. The effect is demonstrated in twisted bilayer graphene and twisted homobilayer transition metal dichalcogenides with a wide range of twist angles, which exhibit giant Hall ratios under experimentally practical conditions, with gate voltage controlled on-off switch. This work reveals intriguing Hall physics in chiral structures, and opens up a research direction of layertronics that exploits the quantum nature of layer degree of freedom to uncover exciting effects.
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Affiliation(s)
- Dawei Zhai
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Chen
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Xiao
- Department of Physics, The University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
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12
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Wu Z, Liu K, Mu X, Zhou J. Renormalizing Antiferroelectric Nanostripes in β'-In 2Se 3 via Optomechanics. J Phys Chem Lett 2023; 14:677-684. [PMID: 36637877 DOI: 10.1021/acs.jpclett.2c03226] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Antiferroelectric (AFE) materials have attracted a great deal of attention owing to their high energy conversion efficiency and good tunability. Recently, an exotic two-dimensional AFE material, a β'-In2Se3 monolayer that could host atomically thin AFE nanostripe domains, has been experimentally synthesized and theoretically examined. In this work, we apply first-principles calculations and theoretical estimations to predict that light irradiation can control the nanostripe width of such a system. We suggest that an intermediate near-infrared light (below the bandgap) could effectively harness the thermodynamic Gibbs free energy and thermodynamic stability, and the AFE nanostripe width will gradually decrease. We also propose to use linearly polarized light above the bandgap to generate an AFE nanostripe-specific photocurrent, providing an all-optical pump-probe setup for such AFE nanostripe width phase transitions.
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Affiliation(s)
- Zihang Wu
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Kun Liu
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xingchi Mu
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
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13
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Chen W, Gu M, Li J, Wang P, Liu Q. Role of Hidden Spin Polarization in Nonreciprocal Transport of Antiferromagnets. PHYSICAL REVIEW LETTERS 2022; 129:276601. [PMID: 36638296 DOI: 10.1103/physrevlett.129.276601] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Revised: 08/04/2022] [Accepted: 11/22/2022] [Indexed: 06/17/2023]
Abstract
The discovery of hidden spin polarization (HSP) in centrosymmetric nonmagnetic crystals, i.e., spatially distributed spin polarization originated from local symmetry breaking, has promised an expanded material pool for future spintronics. However, the measurements of such exotic effects have been limited to subtle space- and momentum-resolved techniques, unfortunately, hindering their applications. Here, we theoretically predict macroscopic non-reciprocal transports induced by HSP when coupling another spatially distributed quantity, such as staggered local moments in a space-time PT-symmetric antiferromagnet. By using a four-band model Hamiltonian, we demonstrate that HSP plays a crucial role in determining the asymmetric bands with respect to opposite momenta. Such band asymmetry leads to non-reciprocal nonlinear conductivity, exemplified by tetragonal CuMnAs via first-principles calculations. We further provide the material design principles for large nonlinear conductivity, including two-dimensional nature, multiple band crossings near the Fermi level, and symmetry protected HSP. Our Letter not only reveals direct spintronic applications of HSP (such as Néel order detection), but also sheds light on finding observables of other hidden effects, such as hidden optical polarization and hidden Berry curvature.
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Affiliation(s)
- Weizhao Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mingqiang Gu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiayu Li
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Panshuo Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qihang Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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