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Wang BJ, Hou YN, Jin CD, Zhang H, Wang JL, Gong PL, Lian RQ, Shi XQ, Wang RN. Rational design of a two-dimensional high-temperature ferromagnet from HCP cobalt. Phys Chem Chem Phys 2024; 26:22715-22725. [PMID: 39161289 DOI: 10.1039/d4cp01390e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Cobalt has the highest Curie temperature (Tc) among the elemental ferromagnetic metals and has a hexagonal close-packed (HCP) structure at room temperature. In this study, HCP Co was thinned to the thickness of several (n) unit cells along the c-axis and then passivated by halogen atoms, thus being named Co2nX2 (X = F, Cl, Br and I). For Co2X2 and Co3X2, all of them are not only kinetically but also thermodynamically stable from the viewpoint of the phonon spectra and molecular dynamics. Similar to HCP Co, two-dimensional (2D) Co2F2, Co2Cl2 and Co3X2 (X = Cl, Br and I) are still ferromagnetic metals within the Stoner model but Co2X2 (X = Br and I) is a ferromagnetic half-metal with the coexistence of the metallic behavior for one spin and the insulating behavior for the other spin. Taking into account the spin-orbital coupling (SOC), the easy-magnetization axis is within the plane where the magnetization is isotropic, making it look like a 2D XY magnet. Applying a critical biaxial strain could lead to an easy-magnetization axis changing from the in-plane to the out-of-plane direction. Finally, we use classical Monte Carlo simulations to estimate the Curie temperature (Tc) which is as high as 957 and 510 K for Co2F2 and Co2Cl2, respectively, because of the strong direct exchange interaction. Different from being obtained by mechanical or liquid exfoliation from van der Waals layered structures, our study opens up new possibilities to search for novel 2D ferromagnets from the elemental ferromagnets and provides opportunities for realizing realistic ultra-thin spintronic devices.
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Affiliation(s)
- Bo-Jing Wang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Yi-Na Hou
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Chen-Dong Jin
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Hu Zhang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Jiang-Long Wang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Peng-Lai Gong
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Ru-Qian Lian
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Xing-Qiang Shi
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Rui-Ning Wang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
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Kalmár J, Karlický F. Mn 2C MXene functionalized by oxygen is a semiconducting antiferromagnet and an efficient visible light absorber. Phys Chem Chem Phys 2024; 26:19733-19741. [PMID: 38984393 DOI: 10.1039/d4cp02264e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/11/2024]
Abstract
Manganese-based MXenes are promising two-dimensional materials due to the broad palette of their magnetic phases and the possibility of experimental preparation because the corresponding MAX phase was already prepared. Here, we systematically investigated geometrical conformers and spin solutions of oxygen-terminated Mn2C MXene and performed subsequent many-body calculations to obtain reliable electronic and optical properties. Allowing energy-lowering using the correct spin ordering via supercell magnetic motifs is essential for the Mn2CO2 system. The stable ground-state Mn2CO2 conformation is antiferromagnetic (AFM) with zigzag lines of up and down spins on Mn atoms. The AFM nature is consistent with the parent MAX phase and even the clean depleted Mn2C sheet. Other magnetic states and geometrical conformations are energetically very close, providing state-switching possibilities in the material. Subsequent many-body GW and Bethe-Salpeter equation (BSE) calculations provide indirect semiconductor characteristics of AFM Mn2CO2 with a fundamental gap of 2.1 eV (and a direct gap of 2.4 eV), the first bright optical transition at 1.3 eV and extremely strongly bound (1.1 eV) first bright exciton. Mn2CO2 absorbs efficiently the whole visible light range and near ultraviolet range (between 10 and 20%).
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Affiliation(s)
- Jiří Kalmár
- Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, 7013 Ostrava, Czech Republic.
| | - František Karlický
- Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, 7013 Ostrava, Czech Republic.
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Chen B, Zhou B, Wang X. Valley polarization and magnetic anisotropy of two-dimensional Ni 2Cl 3I 3/MoSe 2 heterostructures. NANOSCALE 2024; 16:12196-12206. [PMID: 38842385 DOI: 10.1039/d4nr01253d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Two-dimensional (2D) Janus trihalides have attracted widespread attention due to their potential applications in spintronics. In this work, the valley polarization of MoSe2 at the K' and K points can be modulated by Ni2Cl3I3, a new 2D Janus trihalide. The Ni2Cl3I3/MoSe2 heterostructure has an in-plane magnetic anisotropy energy (IMA) and is characterized by three distinct electronic structures: metallic, semiconducting, and half-metallic. It is noted that the semiconducting state features a band gap of 0.07 eV. When spin-orbit coupling (SOC) is considered, valley polarization is exhibited in the Ni2Cl3I3/MoSe2 heterostructure, with the degree of valley polarization varying across different configurations and reaching a maximum value of 4.6 meV. The electronic properties, valley polarization and MAE of the system can be tuned by biaxial strains. The application of a biaxial strain ranging from -6% to +6% can enhance the valley polarization value from 0.9 meV to 12.9 meV. The directions of MAE of the Ni2Cl3I3/MoSe2 heterostructure can be changed at biaxial strains of -6%, +2%, +4% and +6%. The above calculation results show that the heterostructure system possesses rich electronic properties and tunability, with extensive potential applications in the fields of spintronic and valleytronic devices.
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Affiliation(s)
- Bo Chen
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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Zhou Y, Li S, Liang X, Zhou Y. Topological Spin Textures: Basic Physics and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312935. [PMID: 38861696 DOI: 10.1002/adma.202312935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 05/24/2024] [Indexed: 06/13/2024]
Abstract
In the face of escalating modern data storage demands and the constraints of Moore's Law, exploring spintronic solutions, particularly the devices based on magnetic skyrmions, has emerged as a promising frontier in scientific research. Since the first experimental observation of skyrmions, topological spin textures have been extensively studied for their great potential as efficient information carriers in spintronic devices. However, significant challenges have emerged alongside this progress. This review aims to synthesize recent advances in skyrmion research while addressing the major issues encountered in the field. Additionally, current research on promising topological spin structures in addition to skyrmions is summarized. Beyond 2D structures, exploration also extends to 1D magnetic solitons and 3D spin textures. In addition, a diverse array of emerging magnetic materials is introduced, including antiferromagnets and 2D van der Waals magnets, broadening the scope of potential materials hosting topological spin textures. Through a systematic examination of magnetic principles, topological categorization, and the dynamics of spin textures, a comprehensive overview of experimental and theoretical advances in the research of topological magnetism is provided. Finally, both conventional and unconventional applications are summarized based on spin textures proposed thus far. This review provides an outlook on future development in applied spintronics.
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Affiliation(s)
- Yuqing Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Shuang Li
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Xue Liang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Yan Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
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Wu Q, Wang J, Zhi T, Zhuang Y, Tao Z, Shao P, Cai Q, Yang G, Xue J, Chen D, Zhang R. Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures. NANOTECHNOLOGY 2024; 35:305204. [PMID: 38604152 DOI: 10.1088/1361-6528/ad3d64] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Accepted: 04/09/2024] [Indexed: 04/13/2024]
Abstract
The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy (PMA) is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VS2vdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VS2vdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VS2vdW heterostructure still maintains PMA under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS2/GaN/VS2vdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VS2and the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.
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Affiliation(s)
- Qianqian Wu
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Jin Wang
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yanling Zhuang
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Zhikuo Tao
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Pengfei Shao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Guofeng Yang
- School of Science, Jiangnan University, Wuxi, 214122, People's Republic of China
| | - Junjun Xue
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
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Liu X, Wang H, Chen Z, Zhu W, Li Z, Hu W, Xiao H, Zeng XC. Enhanced Direct Exchange Interaction and Hybridization by Single-Atom Linkers for High Curie Temperature and Superior Visible-Light Harvesting in Cr 3(CN 3) 2. NANO LETTERS 2024; 24:35-42. [PMID: 38117034 DOI: 10.1021/acs.nanolett.3c03044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Designing two-dimensional (2D) ferromagnetic (FM) semiconductors with elevated Curie temperature, high carrier mobility, and strong light harvesting is challenging but crucial to the development of spintronics with multifunctionalities. Herein, we show first-principles computation evidence of the 2D metal-organic framework Kagome ferromagnet Cr3(CN3)2. Monolayer Cr3(CN3)2 is predicted to be an FM semiconductor with a record-high Curie temperature of 943 K owing to the use of a single-atom linker (N), which results in strong direct d-p exchange interaction and hybridization between dyz/xz and pz of Cr and N, as well as excellent matching characteristics in energy and symmetry. The single-atom linker structural feature also leads to notable band dispersion and a relatively high carrier mobility of 420 cm2 V-1 s-1. Moreover, under the in-plane strain, 2D Cr3(CN3)2 can be tuned to possess a strong visible-light-harvesting functionality. These novel properties render monolayer Cr3(CN3)2 a distinct 2D ferromagnet with high potential for the development of multifunctional spintronics.
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Affiliation(s)
- Xiaofeng Liu
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Haidi Wang
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Zhao Chen
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Weiduo Zhu
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Zhongjun Li
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Wei Hu
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Haixiao Xiao
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Xiao Cheng Zeng
- Department of Materials Science & Engineering, City University of Hong Kong, Hong Kong 999077, People's Republic of China
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7
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Lee JE, Yan S, Oh S, Hwang J, Denlinger JD, Hwang C, Lei H, Mo SK, Park SY, Ryu H. Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe 3GaTe 2. NANO LETTERS 2023; 23:11526-11532. [PMID: 38079244 DOI: 10.1021/acs.nanolett.3c03203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Fe3GaTe2, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature (TC). In this study, we reveal the electronic structure of Fe3GaTe2 in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction (Jex) and magnetic anisotropy energy to the development of the high-TC ferromagnetic ordering in Fe3GaTe2. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-TC ferromagnetic ordering in Fe3GaTe2.
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Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Shaohua Yan
- Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Sehoon Oh
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul 06978, Korea
| | - Jinwoong Hwang
- Department of Physics, Kangwon National University, Chuncheon 24341, Korea
| | - Jonathan D Denlinger
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan 46241, Korea
- Quantum Matter Core Facility, Pusan National University, Busan 46241, Korea
| | - Hechang Lei
- Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul 06978, Korea
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
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8
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Tang J, Li S, Wang D, Zheng Q, Zhang J, Lu T, Yu J, Sun L, Sa B, Sumpter BG, Huang J, Sun W. Enriching 2D transition metal borides via MB XMenes (M = Fe, Co, Ir): Strong correlation and magnetism. NANOSCALE HORIZONS 2023; 9:162-173. [PMID: 37991927 DOI: 10.1039/d3nh00364g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2023]
Abstract
Recently, two-dimensional (2D) FeSe-like anti-MXenes (or XMenes), composed of late d-block transition metal M and p-block nonmetal X elements, have been both experimentally and theoretically investigated. Here, we select three 2D borides FeB, CoB and IrB for a deeper investigation by including strong correlation effects, as a fertile ground for understanding and applications. Using a combination of Hubbard corrected first-principles calculations and Monte Carlo simulations, FeB and CoB are found to be ferro- and anti-ferro magnetic, contrasting with the non-magnetic nature of IrB. The metallic FeB XMene monolayer, superior to most of the MXenes or MBenes, exhibits robust ferromagnetism, driven by intertwined direct-exchange and super-exchange interactions between adjacent Fe atoms. The predicted Curie temperature (TC) of the FeB monolayer via the Heisenberg model reaches an impressive 425 K, with the easy-axis oriented out-of-plane and high magnetic anisotropic energy (MAE). The asymmetry in the spin-resolved transmission spectrum induces a thermal spin current, providing an opportunity for spin filtration. This novel 2D FeB material is expected to hold great promise as an information storage medium and find applications in emerging spintronic devices.
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Affiliation(s)
- Jiawei Tang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
| | - Shaohan Li
- School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China
- Jiangsu Province Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing, 219210, China
| | - Duo Wang
- Faculty of Applied Sciences, Macao Polytechnic University, Macao, SAR, China
| | - Qi Zheng
- School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China
- Jiangsu Province Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing, 219210, China
| | - Jing Zhang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
| | - Tao Lu
- School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China
- Jiangsu Province Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing, 219210, China
| | - Jin Yu
- School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China
- Jiangsu Province Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing, 219210, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
| | - Baisheng Sa
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Bobby G Sumpter
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jingsong Huang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Weiwei Sun
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
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Jafari M, Rudziński W, Barnaś J, Dyrdał A. Electronic and magnetic properties of 2D vanadium-based transition metal dichalcogenides. Sci Rep 2023; 13:20947. [PMID: 38017049 PMCID: PMC10684541 DOI: 10.1038/s41598-023-48141-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Accepted: 11/22/2023] [Indexed: 11/30/2023] Open
Abstract
In this paper, electronic and magnetic properties of monolayers and bilayers of Vanadium-based transition metal dichalcogenides VX2 (X = S, Se, Te) in the H phase are investigated theoretically using methods based on DFT calculations as well as analytical methods based on effective spin Hamiltonians. The band structure has been computed for all systems, and then the results have been used to determine exchange parameters and magnetic anisotropy constants. These parameters are subsequently used for the determination of the Curie temperatures, hysteresis curves, and energy of spin-wave excitations. In the latter case, we compare analytical results based on effective spin Hamiltonian with those determined numerically by Quantum ATK software and find a good agreement. The determined Curie temperature for VTe2 monolayers and bilayers is below the room temperature (especially that for bilayers), while for the other two materials, i.e. for VS2 and VSe2, it is above the room temperature, in agreement with available experimental data.
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Affiliation(s)
- Mirali Jafari
- Department of Mesoscopic Physics, ISQI, Faculty of Physics, Adam Mickiewicz University in Poznań, ul. Uniwersytetu Poznańskiego 2, 61-614, Poznań, Poland
| | - Wojciech Rudziński
- Department of Mesoscopic Physics, ISQI, Faculty of Physics, Adam Mickiewicz University in Poznań, ul. Uniwersytetu Poznańskiego 2, 61-614, Poznań, Poland
| | - Józef Barnaś
- Department of Mesoscopic Physics, ISQI, Faculty of Physics, Adam Mickiewicz University in Poznań, ul. Uniwersytetu Poznańskiego 2, 61-614, Poznań, Poland
- Institute of Molecular Physics, Polish Academy of Sciences, ul. M. Smoluchowskiego 17, 60-179, Poznań, Poland
| | - Anna Dyrdał
- Department of Mesoscopic Physics, ISQI, Faculty of Physics, Adam Mickiewicz University in Poznań, ul. Uniwersytetu Poznańskiego 2, 61-614, Poznań, Poland.
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10
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Zhao H, Wang H, Tan W, Ren N, Ding L, Yu X, Wang A. A novel two-dimensional NiCl 2O 8 lattice with negative Poisson's ratio and magnetic modulation. Phys Chem Chem Phys 2023; 25:31050-31056. [PMID: 37942556 DOI: 10.1039/d3cp02400h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Two-dimensional (2D) materials with simultaneous magnetic semiconducting properties and a negative Poisson's ratio are crucial for fabricating multifunctional electronic devices. However, progress in this area has been generally constrained. Based on first-principles calculations, we engineered a 2D Ni-based oxyhalide with a honeycomb lattice structure. It was observed that the NiCl2O8 monolayer exhibits both high- and low-buckling states in its geometry, along with intrinsic magnetic semiconductor properties in its electronic structure. Importantly, we demonstrated that the magnetic ordering of the NiCl2O8 lattice is susceptible to applied strain, which resulted in a phase transition from paramagnetic to ferromagnetic under biaxial strain. The Curie temperature was also evaluated using Monte Carlo simulations within the Ising model. Additionally, our research uncovered that the 2D NiCl2O8 lattice chain displays a negative Poisson's ratio (NPR) along the z-direction. The triangular hinge structure in its centrosymmetric configuration was identified as the origin of this unique phenomenon. The coexistence of NPR and magnetic phase transition properties in the NiCl2O8 lattice makes it quite promising for applications in nanoelectronic and spintronic devices.
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Affiliation(s)
- Hongbo Zhao
- Institute for Advanced Interdisciplinary Research, University of Jinan, Jinan, Shandong, 250022, China.
| | - Hongguang Wang
- Jinan Jingheng Electronics Co., Ltd, Jinan, Shandong, 250014, China
| | - Wei Tan
- Institute for Advanced Interdisciplinary Research, University of Jinan, Jinan, Shandong, 250022, China.
| | - Na Ren
- Institute for Advanced Interdisciplinary Research, University of Jinan, Jinan, Shandong, 250022, China.
| | - Longhua Ding
- Institute for Advanced Interdisciplinary Research, University of Jinan, Jinan, Shandong, 250022, China.
| | - Xin Yu
- Institute for Advanced Interdisciplinary Research, University of Jinan, Jinan, Shandong, 250022, China.
| | - Aizhu Wang
- Institute for Advanced Interdisciplinary Research, University of Jinan, Jinan, Shandong, 250022, China.
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Chen B, Wang X, Mi W. Dirac semimetallic Janus Ni-trihalide monolayer with strain-tunable magnetic anisotropy and electronic properties. Phys Chem Chem Phys 2023; 25:28638-28650. [PMID: 37874663 DOI: 10.1039/d3cp04261h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Two-dimensional (2D) ferromagnetic (FM) semiconductors have been paid much attention due to the potential applications in spintronics. Here, the electronic and magnetic properties of 2D Janus Ni-trihalide monolayer Ni2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) are investigated by first-principle calculations. The properties of Ni2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) monolayers are compared by selecting the NiCl3 monolayer as the reference material. Ni2X3Y3 monolayers have two distinct magnetic ground states of ferromagnetic (FM) and antiferromagnetic (AFM). In the Ni2X3Y3 monolayer, two different orbital splits were observed, one semiconductor state and the other semimetal state. The semimetal state of Ni2X3Y3 can be tuned to semiconductor or metallic state when biaxial strain is applied. The magnetic anisotropy energy (MAE) of the Ni2X3Y3 monolayer can display variations compared to that of the NiCl3 monolayer, with the direction of easy magnetization being influenced by the specific halogen elements present. The easy magnetization direction of Ni2X3Y3 can also be changed by applying biaxial strain. The Tc of Ni2X3Y3 is predicted to be about 100 K according to the calculation of the EAFM-EFM model. The design of the Janus Ni2X3Y3 structure has expanded the range of 2D magnetic materials, a significant contribution has been made to the advancement of spintronics and its applications.
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Affiliation(s)
- Bo Chen
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Wenbo Mi
- Department of Applied Physics, School of Science, Tianjin University, Tianjin 300354, China.
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12
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Wang Z, Pan H, Zhou B. Nonvolatile magnetoelectric coupling in two-dimensional van der Waals sandwich heterostructure CuInP 2S 6/MnCl 3/CuInP 2S 6. Phys Chem Chem Phys 2023; 25:29098-29107. [PMID: 37862024 DOI: 10.1039/d3cp03798c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Due to the recent experimental breakthrough in two-dimensional materials, with the absence of hanging bonds on the surface and strong tolerance for lattice mismatch, heterogeneous integration of different two-dimensional materials provides a new opportunity for coupling between different physical properties. Here, we report the realization of nonvolatile magnetoelectric coupling in vdW sandwich heterostructure CuInP2S6/MnCl3/CuInP2S6. Using first-principles calculations, we reveal that when interfacing with ferroelectric CuInP2S6, the Dirac half-metallic state of monolayer MnCl3 will be destroyed. Moreover, depending on the electrically polarized direction of CuInP2S6, MnCl3 can be a half-metal or a ferromagnetic semiconductor. We unveil that the obtained ferromagnetic semiconductor in MnCl3 can be attributed to the different gain and loss of electrons on the two adjacent Mn atoms due to the sublattice symmetry broken by interlayer coupling. The effects of interfacial magnetoelectric coupling on magnetic anisotropy and ferromagnetic Curie temperature of MnCl3 are also investigated, and a multiferroic memory based on this model is designed. Our work not only provides a promising way to design nonvolatile electrical control of magnetism but also renders monolayer MnCl3 an appealing platform for developing low-dimensional memory devices.
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Affiliation(s)
- Zichun Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Honggang Pan
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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13
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Eom J, Lee IH, Kee JY, Cho M, Seo J, Suh H, Choi HJ, Sim Y, Chen S, Chang HJ, Baek SH, Petrovic C, Ryu H, Jang C, Kim YD, Yang CH, Seong MJ, Lee JH, Park SY, Choi JW. Voltage control of magnetism in Fe 3-xGeTe 2/In 2Se 3 van der Waals ferromagnetic/ferroelectric heterostructures. Nat Commun 2023; 14:5605. [PMID: 37699895 PMCID: PMC10497543 DOI: 10.1038/s41467-023-41382-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Accepted: 09/03/2023] [Indexed: 09/14/2023] Open
Abstract
We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.
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Affiliation(s)
- Jaeun Eom
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - In Hak Lee
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Jung Yun Kee
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
- Department of Physics, Soongsil University, Seoul, 06978, Korea
| | - Minhyun Cho
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, Korea
| | - Jeongdae Seo
- Department of Physics, KAIST, Daejeon, 34141, Korea
| | - Hoyoung Suh
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Hyung-Jin Choi
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Yumin Sim
- Department of Physics, Chung-Ang University, Seoul, 06974, Korea
| | - Shuzhang Chen
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Hye Jung Chang
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Seung-Hyub Baek
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Cedomir Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Chaun Jang
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, Korea
| | - Chan-Ho Yang
- Department of Physics, KAIST, Daejeon, 34141, Korea
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul, 06974, Korea
| | - Jin Hong Lee
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea.
| | - Se Young Park
- Department of Physics, Soongsil University, Seoul, 06978, Korea.
- Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, Korea.
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea.
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14
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Pang K, Xu X, Wei Y, Ying T, Gao B, Li W, Jiang Y. Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers. NANOSCALE 2023; 15:13420-13427. [PMID: 37547928 DOI: 10.1039/d3nr02188b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/08/2023]
Abstract
The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides (VXYSe4; X, Y = Al, Ga) monolayers are investigated based on the density-functional theory and Monte Carlo simulations. The results reveal that the Néel temperature of the VGa2Se4 monolayer is 18 K with zigzag2-antiferromagnetic (AFM) spin ordering. Also, the magnetic ordering of V ions in VAl2Se4 and VAlGaSe4 monolayers prefer zigzag1-AFM coupling with Néel temperature of 47 K and 33 K, respectively. The magnetic anisotropy calculations demonstrate that the easy magnetization axis of the VXYSe4 monolayers is parallel to the y axis. In addition, the VXYSe4 monolayers can be adjusted from the AFM state to the ferromagnetic (FM) state under biaxial stretching, which can be attributed to the competition between d-p-d superexchange and d-d direct exchange caused by the variation of bond length. The transition temperature of VXYSe4 monolayers can be elevated above room temperature with the help of compression strain. In particular, the in-plane magnetic anisotropy is a robust characteristic regardless of the magnitude of the applied biaxial strain. These explorations not only enrich the family of AFM monolayers with excellent stability but also provide distinctive ideas for the performance control of AFM materials and their applications in nanodevices.
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Affiliation(s)
- Kaijuan Pang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Xiaodong Xu
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Yadong Wei
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Tao Ying
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Bo Gao
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Weiqi Li
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Yongyuan Jiang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin 150001, China
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15
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Wu H, Zhang J, Lu Q, Li Y, Jiang R, Liu Y, Zheng X, Zhao N, Li J, Deng Y, Hu W. High-Entropy Layered Double Hydroxides with Highly Adjustable Components for Enhancing Electrocatalytic Oxygen Evolution. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38423-38432. [PMID: 37527430 DOI: 10.1021/acsami.3c05781] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
The main obstacle to the development of large-scale electrochemical hydrogen production based on water splitting is the slow four-electron kinetics of OER (oxygen evolution reaction). The most efficient method is to create sophisticated and effective OER catalysts. Here, we proposed the controlled synthesis of high-entropy layered double hydroxides (HELDH) for wide component regulation and the component design of high OER activity to make up for the restricted component regulation in conventional catalysts. Through the use of coprecipitation and hydrothermal synthesis, the representative sample (MgCoNi)3(FeAl)-LDH is created and systematically characterized. Significantly, this technique of preparation may generically synthesize a variety of HELDH with various component combinations, demonstrating the remarkable adaptability of the HELDH components. Subsequently, (FeCoNi)3(FeCr)-LDH with high OER activity is designed and synthesized. (FeCoNi)3(FeCr)-LDH shows excellent OER activity (overpotential is only 230 mV at 10 mA cm-2). A new platform for the creation of high-performance catalysts and high-entropy materials was established by the synthesis and design of HELDH.
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Affiliation(s)
- Han Wu
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Jinfeng Zhang
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Qi Lu
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Yajing Li
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Rui Jiang
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Yuan Liu
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Xuerong Zheng
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
- State Key Laboratory of Marine Resource Utilization in South China Sea, School of Materials Science and Engineering, Hainan University, Haikou 570228, P. R. China
| | - Naiqin Zhao
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Jiajun Li
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
| | - Yida Deng
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
- State Key Laboratory of Marine Resource Utilization in South China Sea, School of Materials Science and Engineering, Hainan University, Haikou 570228, P. R. China
| | - Wenbin Hu
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology, (Ministry of Education), Tianjin University, Tianjin 300350, P. R. China
- Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
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16
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Özcan S, Biel B. MXene-based Ti 2C/Ta 2C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy. RSC Adv 2023; 13:17222-17229. [PMID: 37304787 PMCID: PMC10248545 DOI: 10.1039/d3ra03343k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 05/30/2023] [Indexed: 06/13/2023] Open
Abstract
Two-dimensional (2D) lateral heterostructures (LH) combining Ti2C and Ta2C MXenes were investigated by means of first-principles calculations. Our structural and elastic properties calculations show that the lateral Ti2C/Ta2C heterostructure results in a 2D material that is stronger than the original isolated MXenes and other 2D monolayers such as germanene or MoS2. The analysis of the evolution of the charge distribution with the size of the LH shows that, for small systems, it tends to distribute homogeneously between the two monolayers, whereas for larger systems electrons tend to accumulate in a region of ∼6 Å around the interface. The work function of the heterostructure, one crucial parameter in the design of electronic nanodevices, is found to be lower than that of some conventional 2D LH. Remarkably, all the heterostructures studied show a very high Curie temperature (between 696 K and 1082 K), high magnetic moments and high magnetic anisotropy energies. These features make (Ti2C)/(Ta2C) lateral heterostructures very suitable candidates for spintronic, photocatalysis, and data storage applications based upon 2D magnetic materials.
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Affiliation(s)
- S Özcan
- Department of Physics, Aksaray University 68100 Aksaray Turkey
| | - B Biel
- Department of Atomic, Molecular and Nuclear Physics, Instituto Carlos I de Física Teórica y Computacional, Faculty of Science, Campus de Fuente Nueva, University of Granada 18071 Granada Spain
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17
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Li Z, Chen B, Shan S, Zhang Y. Magnetization reversal of perpendicular magnetic anisotropy regulated by ferroelectric polarization in CoFe 3N/BaTiO 3 heterostructures: first-principles calculations. RSC Adv 2023; 13:9924-9931. [PMID: 37034450 PMCID: PMC10075283 DOI: 10.1039/d3ra01842c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 03/29/2023] [Indexed: 04/11/2023] Open
Abstract
Exploring the electric-field switching of perpendicular magnetic anisotropy (PMA) in multiferroic heterostructures has important physical significance, which attracts great interest due to its promising application for energy-efficient information storage. Herewith, we investigate the effect of ferroelectric polarization on magnetic anisotropy in CoFe3N/BaTiO3 heterostructures using first-principles calculations. The calculations reveal that the magnetic anisotropy of CoFe3N can be regulated by ferroelectric polarization of BaTiO3. When the ferroelectric polarization reverses, the PMA of FeCo-TiO2 and FeN-BaO configurations remains, but in the FeN-TiO2 and FeCo-BaO cases, magnetic anisotropy inverses between out-of-plane and in-plane direction. Further orbital-resolved analysis indicates that the transition of magnetic anisotropy is mainly attributed to the orbital hybridization of interfacial Fe/Co atoms with O atoms induced by the magnetoelectric effect. This study may open an effective approach toward modulating PMA and lays a foundation to the development of low energy consumption memory devices.
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Affiliation(s)
- Zirun Li
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Bo Chen
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Shimin Shan
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Yongmei Zhang
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
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18
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Basak K, Ghosh M, Chowdhury S, Jana D. Theoretical studies on electronic, magnetic and optical properties of two dimensional transition metal trihalides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:233001. [PMID: 36854185 DOI: 10.1088/1361-648x/acbffb] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Accepted: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Two dimensional transition metal trihalides have drawn attention over the years due to their intrinsic ferromagnetism and associated large anisotropy at nanoscale. The interactions involved in these layered structures are of van der Waals types which are important for exfoliation to different thin samples. This enables one to compare the journey of physical properties from bulk structures to monolayer counterpart. In this topical review, the modulation of electronic, magnetic and optical properties by strain engineering, alloying, doping, defect engineering etc have been discussed extensively. The results obtained by first principle density functional theory calculations are verified by recent experimental observations. The relevant experimental synthesis of different morphological transition metal trihalides are highlighted. The feasibility of such routes may indicate other possible heterostructures. Apart from spintronics based applications, transition metal trihalides are potential candidates in sensing and data storage. Moreover, high thermoelectric figure of merit of chromium trihalides at higher temperatures leads to the possibility of multi-purpose applications. We hope this review will give important directions to further research in transition metal trihalide systems having tunable band gap with reduced dimensionalities.
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Affiliation(s)
- Krishnanshu Basak
- Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009, India
| | - Mainak Ghosh
- Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009, India
| | - Suman Chowdhury
- S.N. Bose National Centre for Basic Sciences, JD-III Salt Lake City, Kolkata 700098, India
- Department of Physics, Shiv Nadar University, Greater Noida, Uttar Pradesh 201314, India
| | - Debnarayan Jana
- Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009, India
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19
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Niu Y, Zhang K, Cui X, Wu X, Yang J. Two-Dimensional Iron Silicide (FeSi x) Alloys with Above-Room-Temperature Ferromagnetism. NANO LETTERS 2023; 23:2332-2338. [PMID: 36897107 DOI: 10.1021/acs.nanolett.3c00113] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials with intrinsic room-temperature ferromagnetism have gathered tremendous interest as promising candidates for next-generation spintronics. Here, on the basis of first-principles calculations, we report a family of stable 2D iron silicide (FeSix) alloys via dimensional reduction of their bulk counterparts. Our results demonstrate that 2D Fe4Si2-hex, Fe4Si2-orth, Fe3Si2, and FeSi2 nanosheets are lattice-dynamically and thermally stable, confirmed by the calculated phonon spectra and Born-Oppenheimer dynamic simulation up to 1000 K. 2D FeSix nanosheets are ferromagnetic metals with estimated Curie temperatures ranging from 547 to 971 K due to strong direct exchange interaction between Fe sites. In addition, the electronic properties of 2D FeSix alloys can be maintained on silicon substrates, providing an ideal platform for spintronics applications in the nanoscale.
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Affiliation(s)
- Yijie Niu
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Kai Zhang
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xuefeng Cui
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Xiaojun Wu
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jinlong Yang
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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20
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Jiang J, Mi W. Two-dimensional magnetic Janus monolayers and their van der Waals heterostructures: a review on recent progress. MATERIALS HORIZONS 2023; 10:788-807. [PMID: 36594899 DOI: 10.1039/d2mh01362b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A magnetic Janus monolayer, a special type of material which has asymmetric arrangements of its surface at the nanoscale, has been shown to present rather exotic properties for applications in spintronics and its intersections. This review aims to offer a comprehensive review of the emergent physical properties of magnetic Janus monolayers and their van der Waals heterostructures from a theoretical point of view. The review starts by introducing the theoretical methodologies composed of the state-of-the-art methods and the challenges and limitations in validations for the descriptions of the magnetic ground states and thermodynamic properties in magnetic materials. The built-in polarization field induced physical phenomena of magnetic Janus monolayers are then presented. The tunable electronic and magnetic properties of magnetic Janus monolayer-based van der Waals heterostructures are discussed. Finally, the conclusions and future challenges in this field are prospected. This review serves as a complete summary of the two-dimensional magnetic Janus library and emergent electronic and magnetic properties in magnetic Janus monolayers and their heterostructures, and provides guidelines for the design of electronic and spintronic devices based on Janus materials.
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Affiliation(s)
- Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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21
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Zhang D, Zhang Y, Zhou B. Nonvolatile electrical control of valley splitting by ferroelectric polarization switching in a two-dimensional AgBiP 2S 6/CrBr 3 multiferroic heterostructure. NANOSCALE 2023; 15:1718-1729. [PMID: 36594597 DOI: 10.1039/d2nr04956b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The generation and controllability of valley splitting are the major challenge in effectively utilizing valley degrees of freedom in valleytronics. Using first-principles calculations, we propose a novel multiferroic system, a AgBiP2S6/CrBr3 van der Waals heterostructure, with ferromagnetism, ferroelectricity and ferrovalley behaviors. The ferroelectric monolayer AgBiP2S6 originally has two degenerate valleys with a large spin splitting (∼423.1 meV) at the conduction band minimum of K/K' points, due to inversion symmetry breaking combined with strong spin orbit coupling. Magnetic proximity coupling with the ferromagnetic layer CrBr3 breaks the time-reversal symmetry, damaging the degeneracy of K/K' valleys and causing valley splitting (∼30.5 meV). The transition energy barrier between two ferroelectric states with opposite polarization direction of the heterostructure is sufficient to prevent the spontaneous transition at room temperature, and the large intermediate barrier suggests that the ferroelectric state should be observed experimentally under ambient conditions. Nonvolatile electrical control of the valley degrees of freedom is achieved by switching the polarization direction of the ferroelectric layer in the heterostructure. The modulation of valley splitting can also be achieved by applying an external electric field and biaxial strain, as well as changing the magnetization direction. The research of nonvolatile electrical control of valley splitting in the two-dimensional AgBiP2S6/CrBr3 multiferroic heterostructure is crucial for designing all-in-one valleytronic devices, and has important theoretical significance and practical value.
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Affiliation(s)
- Dongxue Zhang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Yifan Zhang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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22
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Özcan S, Biel B. Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of Sc 2CXT, X = O, F, OH; T = C, S, N. Phys Chem Chem Phys 2023; 25:1881-1888. [PMID: 36541438 DOI: 10.1039/d2cp04713f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
The already intriguing electronic and optical properties of the MXene Sc2C family can be further tuned through a wide range of possible functionalizations. Here, by means of density functional theory, we show that the 36 possible elements of the Janus MXT (M: Sc2C, X: O, F, OH, T: C, N, S) family, built by considering the four possible structural models (i) FCC, (ii) HCP, (iii) FCC + HCP, and (iv) HCP + FCC, are all potentially stable. The analysis of their mechanical properties shows the excellent mechanical flexibility of functionalized MXenes (f-MXenes) under large strain, making them more suitable for applications where stress could be an issue. Interestingly, while Sc2C presents a metallic character, Sc2COS, Sc2CFN and Sc2COHN are found to be semiconductors with bandgaps of 2.5 eV (indirect), 1.67 eV (indirect) and 1.1 eV (direct), respectively, which presents promising applications for nano- and optoelectronics. Moreover, Sc2CFC presents a ferromagnetic ground state with the 2 × 2 × 1 supercell magnetic moment of 3.99 μB, while the ground state of Sc2COHC might be antiferromagnetic with a magnetic moment of 3.98 μB, depending on the environment. Remarkably, the band structures of Sc2CFC and Sc2COHC present a half-metallic character with an HSE06 fundamental band gap of 0.60 eV and 0.48 eV, respectively. Our results confirm the extraordinary potential of the Janus MXT (M: Sc2C, X: O, F, OH, T: C, N, S) family for novel applications in 2D nano-,opto- and spintronics.
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Affiliation(s)
- S Özcan
- Department of Physics, Aksaray University, 68100 Aksaray, Turkey.
| | - B Biel
- Department of Atomic, Molecular and Nuclear Physics & Instituto Carlos I de Física Teórica y Computacional, Faculty of Science, Campus de Fuente Nueva, University of Granada, 18071 Granada, Spain
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23
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Wäckerlin C, Cahlík A, Goikoetxea J, Stetsovych O, Medvedeva D, Redondo J, Švec M, Delley B, Ondráček M, Pinar A, Blanco-Rey M, Kolorenč J, Arnau A, Jelínek P. Role of the Magnetic Anisotropy in Atomic-Spin Sensing of 1D Molecular Chains. ACS NANO 2022; 16:16402-16413. [PMID: 36200735 DOI: 10.1021/acsnano.2c05609] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
One-dimensional metal-organic chains often possess a complex magnetic structure susceptible to modification by alteration of their chemical composition. The possibility to tune their magnetic properties provides an interesting playground to explore quasi-particle interactions in low-dimensional systems. Despite the great effort invested so far, a detailed understanding of the interactions governing the electronic and magnetic properties of the low-dimensional systems is still incomplete. One of the reasons is the limited ability to characterize their magnetic properties at the atomic scale. Here, we provide a comprehensive study of the magnetic properties of metal-organic one-dimensional (1D) coordination polymers consisting of 2,5-diamino-1,4-benzoquinonediimine ligands coordinated with Co or Cr atoms synthesized under ultrahigh-vacuum conditions on a Au(111) surface. A combination of integral X-ray spectroscopy with local-probe inelastic electron tunneling spectroscopy corroborated by multiplet analysis, density functional theory, and inelastic electron tunneling simulations enables us to obtain essential information about their magnetic structures, including the spin magnitude and orientation at the magnetic atoms, as well as the magnetic anisotropy.
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Affiliation(s)
- Christian Wäckerlin
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
- Surface Science and Coating Technologies, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Aleš Cahlík
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
| | - Joseba Goikoetxea
- Centro de Física de Materiales CFM/MPC (CSIC-UPV/EHU), Paseo Manuel de Lardizábal 5, 20018 Donostia-San Sebastián, Spain
| | - Oleksandr Stetsovych
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
| | - Daria Medvedeva
- Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
| | - Jesús Redondo
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
| | - Martin Švec
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
| | - Bernard Delley
- Condensed Matter Theory, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Martin Ondráček
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
| | - Andres Pinar
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
- Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116 Prague, Czech Republic
| | - Maria Blanco-Rey
- Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Química, UPV/EHU, Apartado 1072, 20080 Donostia-San Sebastián, Spain
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 Donostia-San Sebastián, Spain
| | - Jindřich Kolorenč
- Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
| | - Andrés Arnau
- Centro de Física de Materiales CFM/MPC (CSIC-UPV/EHU), Paseo Manuel de Lardizábal 5, 20018 Donostia-San Sebastián, Spain
- Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Química, UPV/EHU, Apartado 1072, 20080 Donostia-San Sebastián, Spain
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 Donostia-San Sebastián, Spain
| | - Pavel Jelínek
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 Donostia-San Sebastián, Spain
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24
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Sheng K, Yuan HK, Zhang B. Intrinsic spin, valley and piezoelectric polarizations in room-temperature ferrovalley Janus Ti XY ( XY = SCl and SeBr) monolayers. NANOSCALE 2022; 14:15156-15164. [PMID: 36214068 DOI: 10.1039/d2nr03860a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional room-temperature Janus ferrovalley semiconductors with large spin, valley and piezoelectric polarizations provide fertile platforms for designing multifunctional nanodevices. Little research has been reported to date on such materials. Here, using first-principles calculations, we predict two dynamically stable Janus titanium chalcohalide (TiSCl and TiSeBr) monolayers, which are excellent piezoelectric ferrovalley semiconductors with in-plane magnetization and high magnetic transition temperatures (738 and 884 K). When an extrinsic magnetic field is used to force the magnetization along the out-of-plane direction, a large valley polarization (64 and 146 meV) can be generated in the highest valence band with a large spin-orbit coupling by the breaking of time-reversal and space-inversion symmetry, which can be further clarified by a two-band k·p model. This robust valley-contrasting physics characterized by the valley-dependent Berry curvature leads to the anomalous valley Hall effect. It can be observed by suitable hole doping or light irradiation under an in-plane electric field. Besides, we find that the missing mirror symmetry results in giant out-of-plane piezoelectric polarization (2.05 and 2.04 pm V-1). These outstanding properties give the Janus TiSCl and TiSeBr monolayers potential for a wide variety of applications in nanoelectronics, spintronics, valleytronics, piezoelectrics and other demanding areas.
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Affiliation(s)
- Kang Sheng
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
| | - Hong-Kuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
| | - Bokai Zhang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
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25
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Chauhan HC, Kumar B, Ghosh S. Origin of metamagnetism in skyrmion host Cu[Formula: see text]OSeO[Formula: see text]. Sci Rep 2022; 12:15971. [PMID: 36153357 PMCID: PMC9509362 DOI: 10.1038/s41598-022-20038-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Accepted: 09/07/2022] [Indexed: 11/30/2022] Open
Abstract
Skyrmion host chiral Cu[Formula: see text]OSeO[Formula: see text] has attracted researchers due to several intriguing properties. Observation of metamagnetism in low-temperature and low-field makes the magnetic properties of Cu[Formula: see text]OSeO[Formula: see text] more complex. Here, we present an investigation on metamagnetism in Cu[Formula: see text]OSeO[Formula: see text] by analyzing its structural and magnetic properties. Study of magnetic properties reveal spin-flip of one of the Cu[Formula: see text] ions, embedded in square pyramidal CuO[Formula: see text] polyhedra, due to the development of strain in low-temperature and low-field regime. The spin-flip is found to be the main reason for field-induced first-order metamagnetic transition. Magnetic phase diagram of Cu[Formula: see text]OSeO[Formula: see text] has been constructed with the help of magnetization analyses. It is argued that the metamagnetic hysteretic field region may be low-temperature skyrmion phase with additional spiral and tilted-conical phases. A tricritical point has been observed in the phase diagram at which first-order metamagnetic hysteretic field range ceases to exist.
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Affiliation(s)
| | - Birendra Kumar
- School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110067 India
| | - Subhasis Ghosh
- School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110067 India
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26
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Kim JH, Kim MK, Jeong KW, Shin HJ, Hong JM, Kim JS, Moon K, Lee N, Choi YJ. Spin-flip-driven reversal of the angle-dependent magnetic torque in layered antiferromagnetic Ca 0.9Sr 0.1Co 2As 2. Sci Rep 2022; 12:12866. [PMID: 35896804 PMCID: PMC9329288 DOI: 10.1038/s41598-022-17206-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2022] [Accepted: 07/21/2022] [Indexed: 11/09/2022] Open
Abstract
Spin-flip transition can occur in antiferromagnets with strong magnetocrystalline anisotropy, inducing a significant modification of the anisotropic magnetic properties through phase conversion. In contrast to ferromagnets, antiferromagnets have not been thoroughly examined in terms of their anisotropic characteristics. We investigated the magnetic-field and angle-dependent magnetic properties of Ising-type antiferromagnetic Ca0.9Sr0.1Co2As2 using magnetic torque measurements. An A-type antiferromagnetic order emerges below TN = 97 K aligned along the magnetically easy c-axis. The reversal of the angle-dependent torque across the spin-flip transition was observed, revealing the strong influence of the magnetocrystalline anisotropy on the magnetic properties. Based on the easy-axis anisotropic spin model, we theoretically generated torque data and identified specific spin configurations associated with the magnetic torque variation in the presence of a rotating magnetic field. Our results enrich fundamental and applied research on diverse antiferromagnetic compounds by shedding new light on the distinct magnetic features of the Ising-type antiferromagnet.
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Affiliation(s)
- Jong Hyuk Kim
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Mi Kyung Kim
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Ki Won Jeong
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Hyun Jun Shin
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Jae Min Hong
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Jin Seok Kim
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Kyungsun Moon
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Nara Lee
- Department of Physics, Yonsei University, Seoul, 03722, Korea.
| | - Young Jai Choi
- Department of Physics, Yonsei University, Seoul, 03722, Korea.
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27
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Zhao X, Zhou C, Bao K, Zhu P, Ma S, Tao Q, Cui T. Synthesis, Characterization, and First-Principles Analysis of the MAB-Like Ternary Transition-Metal Boride Fe(MoB) 2. Inorg Chem 2022; 61:11046-11056. [PMID: 35830569 DOI: 10.1021/acs.inorgchem.2c00635] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Novel transition-metal borides have attracted considerable attention because they exhibit high stability under extreme conditions. Compared with binary borides, ternary transition-metal borides (TTMBs) exhibit novel boron substructures and diverse properties, which result in excellent designability. In this study, we synthesized the MAB-like (where M = iron, A = molybdenum, and B = boron) phase Fe(MoB)2 using a high-pressure and high-temperature method. Fe(MoB)2 exhibited ferromagnetic metastable characteristics with a saturation magnetization of 8.35 emu/g at room temperature. Microhardness measurement revealed an indentation hardness of 10.72 GPa, which was higher than those of conventional magnetic materials. First-principles calculations revealed excellent mechanical properties, which mainly originated from the strong covalent short B2 chains. Furthermore, magnetism was attributed to the Fe 3d electrons. Numerous d-d hybridizations existed between the Fe 3d eg and Mo 4d orbitals, and the antibonding/nonbonding state difference for up/down-spin electrons in the hybridization orbitals led to the local magnetic moment of Fe(MoB)2. The magnetic anisotropy energy analyses reveal that Fe(MoB)2 prefers the easy magnetization axis along the z direction, and Mo atom acts as a medium to realize the exchange action between two Fe atoms. The B-B and Fe-B bonds were considerably stronger than the Fe-Mo and Mo-B bonds, and Fe(MoB)2 exhibited a class of atomically laminate composed of FeB2 and Mo layers. These results may provide guidance for the design of novel multifunctional TTMBs by adjusting the interactions between binary metal components.
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Affiliation(s)
- Xingbin Zhao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Chao Zhou
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Kuo Bao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Pinwen Zhu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Shuailing Ma
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Qiang Tao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Tian Cui
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China.,Institute of High Pressure Physics, School of Physical Scientific and Technology, Ningbo University, Ningbo 315211, People's Republic of China
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28
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Farkaš B, de Leeuw NH. AuCo nanoparticles: ordering, magnetisation, and morphology trends predicted by DFT. Phys Chem Chem Phys 2022; 24:10451-10464. [PMID: 35441635 DOI: 10.1039/d2cp00648k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The rapid development of applications relying on magnetism at the nanoscale has put a spotlight on nanoparticles with novel morphologies that are associated with enhanced electronic and magnetic properties. In this quest, nanoalloys combining highly magnetic cobalt and weakly reactive gold could offer many application-specific advantages, such as strong magnetic anisotropy. In the present study, we have employed density functional theory (DFT) calculations to provide a systematic overview of the size- and morphology-dependence of the energetic order and magnetic properties of AuCo nanoparticles up to 2.5 nm in diameter. The core-shell icosahedron was captured as the most favourable morphology, showing a small preference over the core-shell decahedron. However, the magnetic properties (total magnetic moments and magnetic anisotropy) were found to be significantly improved within the L10 ordered structures, even in comparison to monometallic Co nanoparticles. Atom-resolved charges and orbital moments accessed through the DFT analysis of the electronic level properties permitted insight into the close interrelation between the AuCo nanoparticle morphology and their magnetism. These results are expected to assist in the design of tailored magnetic AuCo nanoalloys for specific applications.
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Affiliation(s)
- Barbara Farkaš
- School of Chemistry, Cardiff University, Cardiff CF10 3AT, UK.
| | - Nora H de Leeuw
- School of Chemistry, Cardiff University, Cardiff CF10 3AT, UK. .,School of Chemistry, University of Leeds, Leeds LS2 9JT, UK
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29
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Zhang L, Zhang B, Jiang L, Zheng Y. Giant magnetoresistance in spin valves realized by substituting Y-site atoms in Heusler lattice. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:204003. [PMID: 35193127 DOI: 10.1088/1361-648x/ac5779] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Accepted: 02/22/2022] [Indexed: 06/14/2023]
Abstract
'All-Heusler' spin-valve constructed by two half-metallic Heusler electrodes and a non-magnetic Heusler spacer contains two interfaces that have a crucial influence on the magnetoresistance. In order to reduce the disorder at the interface and protect the half metallicity of the electrode at the same region, we propose a scheme to construct a spin valve by replacing theY-site atoms in the half-metallic Heusler electrode to obtain the corresponding non-magnetic spacer based on the Slater-Pauling rule. In this way, the lattice and band match of the two materials can be ensured naturally. By using Co2FeAl as electrode and Co2ScAl as the spacer materials, we construct the Co2FeAl/Co2ScAl/Co2FeAl(001)-spin valve. Based on the first-principles calculation, the most stable FeAl/CoCo-interface is determined both from the phonon spectra and the formation energy when the spacer Co2ScAl grows on the FeAl-terminated (001) surface of electrode material Co2FeAl. By comparing the projected density of states of the interfacial atoms with the corresponding density of states of the bulk electrode material, only the value of spin-up state of Al changes from 0.17 states/atom/eV to 0.06 states/atom/eV before and after substitution, the half metallicity at the interface is maintained. As a result, the spin-dependent transport properties show significant theoretical magnetoresistance MRopwhich can reach up to 1010% and much larger than 106% reported before.
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Affiliation(s)
- Lei Zhang
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Binyuan Zhang
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Liwei Jiang
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Yisong Zheng
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
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30
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Aras M, Güler-Kılıç S, Kılıç Ç. Enhancement of the magnetic anisotropy in single semiconductor nanowires via surface doping and adatom deposition. NANOTECHNOLOGY 2022; 33:205202. [PMID: 35105830 DOI: 10.1088/1361-6528/ac50f0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Accepted: 02/01/2022] [Indexed: 06/14/2023]
Abstract
The magnetic anisotropy of single semiconductor (ZnO and GaN) nanowires incorporating both a transition metal (Co and Mn, respectively) as a substitutional surface dopant and a heavy metal (Au, Bi, or Pt) adatom is studied by performing density-functional supercell calculations with the HubbardUcorrection. It is found that a substantial enhancement in the magnetic anisotropy energy is obtained through the deposition of Bi; the deposition of Au and Pt leads to significant variation in other magnetic properties, but not in the magnetic anisotropy energy. An analysis within a band description shows that the coexistence of Bi adatom and a surface dopant with large spin moment activates a mechanism involving reorientation and readjustment of the spin moments of electrons in occupied bands in response to the change of magnetization direction, which promotes giant magnetic anisotropy. Our results for adsorption energetics indicate that the accommodation of Bi in the neighborhood of the surface dopant is more likely in GaN nanowires, because the Bi adatom does (not) tend to be closer to the Mn (Co) dopant on the surface of GaN (ZnO) nanowire. The stability of GaN nanowire with giant magnetic anisotropy owing to the incorporation of both Mn and Bi is demonstrated by performingab initiomolecular dynamics simulations at temperatures considerably higher than room temperature. These results suggest that adatom deposition and surface doping can be used complementarily to develop single nanowire-based spintronic devices.
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Affiliation(s)
- Mehmet Aras
- Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400, Turkey
| | - Sümeyra Güler-Kılıç
- Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400, Turkey
| | - Çetin Kılıç
- Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400, Turkey
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31
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Fang X, Zhou B, Sun N, Fu L, Wang X. Valley splitting and magnetic anisotropy in two-dimensional VI 3/MSe 2 (M = W, Mo) heterostructures. Phys Chem Chem Phys 2022; 24:4374-4383. [PMID: 35112682 DOI: 10.1039/d1cp05135k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
As a new van der Waals ferromagnetic material, VI3 can be used to lift the valley degeneracy of transition metal dichalcogenides at the K' and K points. Here, the electronic structure and magnetic anisotropy of the VI3/MSe2 (M = W, Mo) heterostructures are studied. The VI3/WSe2 heterostructure is semiconducting with a band gap of 0.26 eV, while the VI3/MoSe2 heterostructure is metallic. Considering the spin-orbit-coupling, a maximum valley splitting of 3.1 meV appears in the VI3/WSe2 heterostructure. The biaxial strain can tune the valley splitting and magnetic anisotropy of VI3/MSe2 heterostructures. In the VI3/WSe2 heterostructure, which has the most stable stacking, valley splitting can be increased from 1.8 meV at 4% compressive strain to 3.1 meV at 4% tensile strain. At a biaxial strain of -2% to 4%, the VI3/WSe2 heterostructure maintains a small perpendicular magnetic anisotropy, while the VI3/MoSe2 heterostructure shows in-plane magnetic anisotropy under different strains. The significantly tunable electronic structure and magnetic anisotropy under biaxial strain suggest that the VI3/MSe2 heterostructures have potential applications in spintronic devices.
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Affiliation(s)
- Xiaotian Fang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Nan Sun
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Luqian Fu
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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32
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Sheng K, Yuan HK, Wang ZY. Monolayer gadolinium halides, GdX 2 (X = F, Cl, Br): intrinsic ferrovalley materials with spontaneous spin and valley polarizations. Phys Chem Chem Phys 2022; 24:3865-3874. [PMID: 35088778 DOI: 10.1039/d1cp05097d] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) intrinsic ferrovalley semiconductors provide unprecedented opportunities to investigate valley physics as well as providing promising device applications due to their exceptional combination of spontaneous spin and valley polarizations. Here, we have predicted from first-principles calculations and Monte Carlo simulations that monolayers (MLs) GdX2 are such extremely rare excellent materials. Apart from their robust stabilities energetically, dynamically, thermally, and mechanically, these 2D materials are found to be semiconducting intrinsic ferromagnets where the magnetic coupling is ascribed to 5d-electron-mediated 4f-4f exchange interactions. Moreover, MLs GdX2 (X = F, Cl, Br) not only exhibit significant magnetic anisotropy energy of 351, 268, and 30 μeV per Gd, but also have a high Curie temperature of 300, 245, and 225 K, respectively. In particular, spontaneous valley polarization in three systems occurs due to the cooperative interplay between the spin-orbit coupling and magnetic exchange interactions, whose magnitude is as sizable as 55, 38, and 82 meV for MLs GdF2, GdCl2, and GdBr2, respectively. Under the action of an in-plane longitudinal electrical field, the valley-contrasting Berry curvatures arising from the broken space-inversion and time-reversal symmetries in MLs GdX2 could yield opposite transverse velocities of the carriers, giving rise to the occurrence of a spin-polarized anomalous valley Hall effect. Overall, these findings render 2D GdX2 a class of promising candidate materials for experimental studies and practical spintronics and valleytronics applications.
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Affiliation(s)
- Kang Sheng
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
| | - Hong-Kuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
| | - Zhi-Yong Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
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33
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Liu Y, Huang L, Liu H, Wang L. Theoretical scheme of the nonvolatile strain switchable high/low resistance based on the novel strain-tunable magnetic anisotropy in Mn2.25Co0.75Ga0.5Sn0.5/MgO superlattice. Phys Chem Chem Phys 2022; 24:7826-7835. [DOI: 10.1039/d1cp05794d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
It is great desirable to effectively tune electronic and magnetic properties by simple means such as applying external electrical fields or strains in spintronics research. Here, we investigate the strain...
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34
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Shen Z, Xue Y, Wu Z, Song C. Spontaneous magnetic merons in a half-metallic Mn 2I 3Br 3 monolayer with easy-plane anisotropy. Phys Chem Chem Phys 2022; 24:27612-27618. [DOI: 10.1039/d2cp03534k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Abstract
Spontaneous magnetic merons are found to exist in a wide magnetic field range (0–6 T) stabilized by the large in-plane magnetic anisotropy and strong Dzyaloshinskii–Moriya interaction in a half-metallic Mn2I3Br3 monolayer.
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Affiliation(s)
- Zhong Shen
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, China
| | - Yufei Xue
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, China
| | - Zebin Wu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, China
| | - Changsheng Song
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, China
- Longgang Institute of Zhejiang Sci-Tech University, Wenzhou, China
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35
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Islam R, Borah JP. Large magnetic anisotropy in Co-Fe-Ni-N ordered structures: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:095503. [PMID: 34918625 DOI: 10.1088/1361-648x/ac3f03] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2021] [Accepted: 12/01/2021] [Indexed: 06/14/2023]
Abstract
Material design of promising rare-earth free permanent magnet requires tailoring and controlling the intrinsic magnetic properties namely large saturation magnetizationμ0Ms, giant uniaxial magnetic anisotropyKu, and high Curie temperatureTC. Based on first-principles electronic structure calculations, we present a detailed analysis for the intrinsic magnetic properties of CoxFe1-xNi and CoxFe1-xNiN0.25ordered structures. We predict an enhanced structural stability with improvedKuranging from 1.53-2.29 MJ m-3for CoxFe1-xNiN0.25ordered structures, with the exception of CoNiN0.25having planar anisotropy. Detailed analysis of the predicted largeKu, based on perturbation theory and electronic structure calculations, is attributed to the cumulative effect of contribution from the increased tetragonal distortion and induced orbital distortion from the simultaneous Co substitution and interstitial N-doping. By tailoring theKu, we may create efficient and affordable PMs, bridging the gap between commonly used ferrite and high-performance Nd-Fe-B magnets.
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Affiliation(s)
- Riyajul Islam
- Department of Physics, National Institute of Technology Nagaland, Dimapur, Nagaland-797103, India
| | - J P Borah
- Department of Physics, National Institute of Technology Nagaland, Dimapur, Nagaland-797103, India
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36
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Yang HH, Hsu CC, Asakawa K, Lin WC, Hasegawa Y. Reduction in magnetic coercivity of Co nanomagnets by Fe alloying. NANOSCALE 2021; 13:16719-16725. [PMID: 34596197 DOI: 10.1039/d1nr04862g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
We measured the magnetic hysteresis and coercivity of individual Co and Co0.8Fe0.2 bilayer nano-sized island structures formed on Cu (111) substrate using spin-polarized scanning tunneling microscopy. From the hysteresis taken on various sizes of islands, we found that the alloyed islands are ferromagnetic with out-of-plane magnetic anisotropy, same as the pure islands. Coercivity of the alloy islands, which is dependent on their size, was significantly reduced to ≈40% of that of the pure islands. Based on the Stoner-Wohlfarth model, we evaluated the amount of magnetic anisotropic energy and anisotropy constant for both pure and alloy islands. Since tunneling spectra taken on the alloy islands show upward shifts of the valence electronic states as compared to the pure ones, fewer electrons populated in the valence band of the alloy islands are presumably responsible for the reduction in the magnetic anisotropic energy.
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Affiliation(s)
- Hung-Hsiang Yang
- Institute for Solid State Physics, the University of Tokyo, 5-1-5, Kashiwa-no-ha, Kashiwa, Chiba 277-8581, Japan.
- Physical Institute, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Chuan-Che Hsu
- Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan
| | - Kanta Asakawa
- Institute for Solid State Physics, the University of Tokyo, 5-1-5, Kashiwa-no-ha, Kashiwa, Chiba 277-8581, Japan.
- Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
| | - Wen-Chin Lin
- Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan
| | - Yukio Hasegawa
- Institute for Solid State Physics, the University of Tokyo, 5-1-5, Kashiwa-no-ha, Kashiwa, Chiba 277-8581, Japan.
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37
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Liu Y, Wang L. Effects of Interfacial Termination, Oxidation, and Film Thickness on the Magnetic Anisotropy in Mn 2.25Co 0.75Ga 0.5Sn 0.5/MgO Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47293-47301. [PMID: 34558901 DOI: 10.1021/acsami.1c14991] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Perpendicular magnetic anisotropy (PMA) is a determining factor for the realization of nonvolatile information storage devices with high efficiency and thermal stability. In this work, a new spin gapless semiconductor Mn2.25Co0.75Ga0.5Sn0.5 Heusler alloy with an inter-spin zero gap was first designed theoretically. The Mn2.25Co0.75Ga0.5Sn0.5 bulk was prepared successfully in experiment. The effects of interfacial termination, oxidation, and film thickness on the magnetic anisotropy of Mn2.25Co0.75Ga0.5Sn0.5/MgO (MCGS/MgO) heterostructures are investigated systematically by first-principles calculations. The results show that all the Mn(A)Mn(C)GaSn-, Mn(A)Mn(C)CoGaSn-, Mn(B)GaSnI-, and Mn(B)GaSnII-terminated MCGS/MgO heterostructures (called as AC1, AC2, BD1, and BD2 models, respectively) present PMA, which mainly derives from the interfacial and surficial MCGS layers. Furthermore, the PMA of MCGS/MgO heterostructures can be preserved in a large range of interfacial oxidization (up to ±50%). With MCGS thickness increasing from 5 to 16 monolayers, the PMA of MCGS/MgO heterostructures with an AC-type surface decreases significantly. However, the PMA of BD-type surface models is relatively robust to the thickness of the MCGS layer, and the magnetic anisotropy always points to the out-of-plane direction. Therefore, MCGS Heusler alloy is a new promising spin gapless semiconductor candidate for spintronics applications. The robust and tunable PMA in MCGS/MgO heterostructures offers the possibility for developing nonvolatile data memory devices.
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Affiliation(s)
- Yuan Liu
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Liying Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
- Tianjin Demonstration Center for Experimental Physics Education, School of Science, Tianjin University, Tianjin 300354, China
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38
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Sun N, Wang X, Mi W. Induced half-metallic characteristics and enhanced magnetic anisotropy in the two-dimensional Janus V 2I 3Br 3 monolayer by graphyne adsorption. Phys Chem Chem Phys 2021; 23:17338-17347. [PMID: 34346443 DOI: 10.1039/d1cp02344f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The recent emergence of two-dimensional (2D) Janus materials has opened a new avenue for spintronic and optoelectronic applications. However, 2D magnetic Janus materials and Janus monolayer-based magnetic heterostructures are yet to be fully studied. Herein, the stability and electronic structure of 2D Janus V2I3Br3 and V2I3Cl3 monolayers, and the electronic and magnetic properties of 2D graphyne/Janus V2I3Br3 (γ-GY/V2I3Br3) heterostructures are calculated based on the density functional theory. Janus V2I3Br3 and V2I3Cl3 monolayers are ferromagnetic semiconductors with good stability and direct band gap. By combing the graphyne layer, the Janus V2I3Br3 monolayer shows half-metallic characteristics. The electrical conductivity of the Janus V2I3Br3 monolayer in γ-GY/V2I3Br3 heterostructures is further improved, which is very favorable for the applications of the γ-GY/V2I3Br3 heterostructure in battery anodes. Moreover, the Janus V2I3Br3 monolayer possesses a smaller perpendicular magnetic anisotropy (PMA), and the PMA can be effectively enhanced by combing γ-GY. Herein, the enhanced PMA was discovered to depend on the stacking patterns of γ-GY and V2I3Br3 monolayers. Biaxial strains can further affect the PMA of the γ-GY/V2I3Br3 heterostructure. Meanwhile, at a compressive strain, the Janus V2I3Br3 monolayer in the γ-GY/V2I3Br3 heterostructure realizes the transition from the magnetic half-metallic to the magnetic metal state. These results can enrich the applications and designs of γ-GY/V2I3Br3 magnetic heterostructures in spintronic devices and energy fields.
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Affiliation(s)
- Nan Sun
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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39
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Wang Y, Jiang X, Wang Y, Zhao J. Ferromagnetic Dirac half-metallicity in transition metal embedded honeycomb borophene. Phys Chem Chem Phys 2021; 23:17150-17157. [PMID: 34184024 DOI: 10.1039/d1cp01708j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Exploring two-dimensional (2D) ferromagnetic materials with intrinsic Dirac half-metallicity is crucial for the development of next-generation spintronic devices. Based on first-principles calculations, here we propose a simple valence electron-counting rule to design such materials and endow them with good stability and desirable magnetic properties. Taking honeycomb borophene as a prototype, we demonstrate that embedding open-shell transition metal (like Cr) atoms in the hexagonal ring of boron atoms can provide two valence electrons to fully occupy the in-plane σ and out-of-plane π bands of B atoms. The remaining four valence electrons reside in d orbitals that split under C6v symmetry, yielding a magnetic moment of ∼2 μB per Cr atom. The resulting CrB2 monolayer exhibits a Dirac half-metal band structure, a high Curie temperature of 175 K, and a large out-of-plane magnetic anisotropy energy of 4 meV per Cr simultaneously. Our work establishes a feasible route for the experimental realization of ferromagnetic Dirac half-metallicity in 2D materials and provides new opportunity to realize high-speed devices with low consumption.
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Affiliation(s)
- Yanxia Wang
- Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China.
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40
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Farkaš B, de Leeuw NH. Effect of coverage on the magnetic properties of -COOH, -SH, and -NH 2 ligand-protected cobalt nanoparticles. NANOSCALE 2021; 13:11844-11855. [PMID: 34190285 DOI: 10.1039/d1nr01081f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Implementation of magnetic nanoparticles in biomedicine requires their passivation, which often comes at a cost of diminished magnetic properties. For the design of nano-agents with targeted magnetic behaviour, it is important to distinguish between ligands which can improve desired performance, and those that reduce it. Carboxylic acid-, thiol-, and amine-protected cobalt nanoparticles were studied by density functional theory calculations to model the impact of ligand coverage on the magnetic properties. The simulations show that the functional group, arrangement, and coverage density of the ligand coating control both the total magnetic moment and magnetic anisotropy energy of the nanoparticle, as well as the distribution of local spin magnetic moments across the metallic core. Captured effects of ligand binding on the orbital moments of cobalt atoms were insignificant. Out of the three ligand families, only carboxylic acid coatings increased the magnetic moments of cobalt nanoparticles, while amines and thiols quenched them. Calculated anisotropy energies of protected nanoparticles consistently increased with the growing ligand density, reaching the highest values for a 100% coverage of both carboxylic acid and thiol coatings. However, the binding nature of the two functional groups showed opposite impacts on the d-states of interacting cobalt atoms. This study has thus established important principles for the design of biocompatible magnetic nanocomposites, highlighting different routes to achieve desired magnetic behaviour.
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Affiliation(s)
- Barbara Farkaš
- School of Chemistry, Cardiff University, Cardiff CF10 3AT, UK
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41
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Hu Y, Jin S, Luo ZF, Zeng HH, Wang JH, Fan XL. Conversation from antiferromagnetic MnBr 2 to ferromagnetic Mn 3Br 8 monolayer with large MAE. NANOSCALE RESEARCH LETTERS 2021; 16:72. [PMID: 33914179 PMCID: PMC8085181 DOI: 10.1186/s11671-021-03523-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2021] [Accepted: 04/04/2021] [Indexed: 06/12/2023]
Abstract
A pressing need in low energy spintronics is two-dimensional (2D) ferromagnets with Curie temperature above the liquid-nitrogen temperature (77 K), and sizeable magnetic anisotropy. We studied Mn3Br8 monolayer which is obtained via inducing Mn vacancy at 1/4 population in MnBr2 monolayer. Such defective configuration is designed to change the coordination structure of the Mn-d5 and achieve ferromagnetism with sizeable magnetic anisotropy energy (MAE). Our calculations show that Mn3Br8 monolayer is a ferromagnetic (FM) half-metal with Curie temperature of 130 K, large MAE of - 2.33 meV per formula unit, and atomic magnetic moment of 13/3μB for the Mn atom. Additionally, Mn3Br8 monolayer maintains to be FM under small biaxial strain, whose Curie temperature under 5% compressive strain is 160 K. Additionally, both biaxial strain and carrier doping make the MAE increases, which mainly contributed by the magneto-crystalline anisotropy energy (MCE). Our designed defective structure of MnBr2 monolayer provides a simple but effective way to achieve ferromagnetism with large MAE in 2D materials.
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Affiliation(s)
- Y. Hu
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi’an, 710072 Shaanxi China
| | - S. Jin
- Queen Mary University of London Engineering School, Northwestern Polytechnical University, 127 YouYi Western Road, Xi’an, 710072 Shaanxi China
| | - Z. F. Luo
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi’an, 710072 Shaanxi China
| | - H. H. Zeng
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi’an, 710072 Shaanxi China
| | - J. H. Wang
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi’an, 710072 Shaanxi China
| | - X. L. Fan
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi’an, 710072 Shaanxi China
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42
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Jana S, Chowdhury S, Jana D, Chakrabarti A, Banerjee A. Emergence of magnetic anisotropy by surface adsorption of transition metal dimers on γ-graphyne framework. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:205501. [PMID: 33567421 DOI: 10.1088/1361-648x/abe513] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2020] [Accepted: 02/10/2021] [Indexed: 06/12/2023]
Abstract
In this paper a systematic study is carried out to demonstrate the structural stability and magnetic novelty of adsorbing transition metal (TM) dimers (A-B) on graphyne (GY) surface, GY@A-B. Our research points out that the dimers are strongly adsorbed onto GY due to their large natural pores and the electron affinity of the sp-hybridized carbon atoms. Electronic properties of these dimer-graphyne composite systems are of particular importance as they behave as degenerate semiconductors with partial occupation of states atEF. Furthermore, their remarkable spin polarization (>80%) at Fermi energy (EF) can be of paramount importance in spintronics applications. Most of the GY@A-B structures exhibit large magnetic anisotropies as well as magnetic moments along the out-of-plane direction with respect to the GY surface. Particularly, GY@Co-Ir, GY@Ir-Ir and GY@Ir-Os structures possess positive magnetic anisotropic energies (MAE) of 121 meV, 81 meV and 137 meV, respectively, which are comparable to other well-known TM dimer doped systems. The emergence of high MAE can be understood using the second-order perturbation theory on the basis of the strong spin-orbit coupling (SOC) between the two TMs and the degeneracy of their d-orbitals nearEF. A close correspondence between the simulated and the analytical results has been established through our work. Further, a simple estimation shows that, GY@A-B structures have the potential to store data up to 64 PB m-2. These intriguing electronic characteristics along with magnetism suggest GY@A-B to be a promising material for future magnetic storage devices.
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Affiliation(s)
- Susmita Jana
- Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata-700009, India
| | - Suman Chowdhury
- Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel Street, Moscow-121205, Russia
| | - Debnarayan Jana
- Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata-700009, India
| | - Aparna Chakrabarti
- Human Resources Development Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai-400094, India
| | - Arup Banerjee
- Human Resources Development Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai-400094, India
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43
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Xu C, Zhang J, Guo Z, Zhang S, Yuan X, Wang L. A first-principles study on the electronic property and magnetic anisotropy of ferromagnetic CrOF and CrOCl monolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:195804. [PMID: 33561851 DOI: 10.1088/1361-648x/abe477] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2020] [Accepted: 02/09/2021] [Indexed: 06/12/2023]
Abstract
Two-dimensional ferromagnetic materials with large perpendicular magnetic anisotropy (PMA) hold great potential in realizing low critical switching current, high thermal stability and high density nonvolatile storage in magnetic random-access memories. Our first-principles calculations reveal that CrOF and CrOCl monolayers (MLs) are two-dimensional (2D) ferromagnetic semiconductors with out-of-plane magnetic easy axis, and PMAs of CrOF and CrOCl MLs are mainly contributed by Cr atoms. The magnetic anisotropy of CrOF and CrOCl MLs can be controlled and enhanced by applying biaxial strain. Tensile strain can further enhance PMAs of CrOF and CrOCl MLs by 82.9% and 161.0% higher than those of unstrained systems, respectively. In addition, appropriate compressive strain can switch the magnetic easy axis of CrOF and CrOCl MLs from out-of-plane direction to in-plane direction. The semiconductor natures of CrOF and CrOCl MLs robust against biaxial strain, the band gaps of these systems under biaxial strain are in the range of 1.26 eV to 2.40 eV. By applying biaxial strain, the Curie temperatures of CrOF and CrOCl MLs increase up to 282 K and 163 K, respectively. These tunable properties suggest that CrOF and CrOCl MLs have great application potentials for magnetic data storage.
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Affiliation(s)
- Chunyan Xu
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Jing Zhang
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Zexuan Guo
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Siqi Zhang
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Xiaoxi Yuan
- Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, People's Republic of China
| | - Lingrui Wang
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
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44
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Zhang C, Li Z, Li G, Gao B, Liang F, Li Z, Song G. Intrinsic ferromagnetic semiconductors in rhombohedral RMnO 3 (R = Sc, Y, and Lu) with high critical temperature and large ferroelectric polarization. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:105803. [PMID: 33296883 DOI: 10.1088/1361-648x/abd1f9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Ferromagnetic (FM) semiconductors have been recognized as the cornerstone for next-generation highly functional spintronic devices. However, the development in practical applications of FM semiconductors is limited by their low Curie temperatures (T C). Here, on the basis of model analysis, we find that the FM super-exchange couplings in the d 5 - d 3 system can be significantly strengthened by reducing the virtual exchange gap (G ex) between occupied and empty e g orbitals. By first-principle calculations, we predict robust ferromagnetism in three rhombohedral RMnO3 (R = Sc, Y, and Lu) compounds with the T C that is as high as ∼1510 K (YMnO3). The oxygen breathing motions open a band gap and create an unusual Mn2+/Mn4+ charge ordering of the Mn-d electrons, which play an important role in altering the G ex. Interestingly, the rhombohedral RMnO3 compounds are also ferroelectric (FE) with a large spontaneous polarization approaching that of LiNbO3. These results not only deepen the understandings of magnetic couplings in d 5 - d 3 system, but also provide a way to design room-temperature FM-FE multiferroics.
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Affiliation(s)
- Chengfeng Zhang
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Zixu Li
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Guannan Li
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Benling Gao
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Feng Liang
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Zhongwen Li
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Guang Song
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
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45
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González-García A, López-Pérez W, González-Hernández R, Bacaksiz C, Šabani D, Milošević MV, Peeters FM. Transition-metal adatoms on 2D-GaAs: a route to chiral magnetic 2D materials by design. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:145803. [PMID: 33503605 DOI: 10.1088/1361-648x/abe077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Accepted: 01/27/2021] [Indexed: 06/12/2023]
Abstract
Using relativistic density-functional calculations, we examine the magneto-crystalline anisotropy and exchange properties of transition-metal atoms adsorbed on 2D-GaAs. We show that single Mn and Mo atom (Co and Os) strongly bind on 2D-GaAs, and induce local out-of-plane (in-plane) magnetic anisotropy. When a pair of TM atoms is adsorbed on 2D-GaAs in a close range from each other, magnetisation properties change (become tunable) with respect to concentrations and ordering of the adatoms. In all cases, we reveal presence of strong Dzyaloshinskii-Moriya interaction. These results indicate novel pathways towards two-dimensional chiral magnetic materials by design, tailored for desired applications in magneto-electronics.
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Affiliation(s)
- A González-García
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - W López-Pérez
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
| | - R González-Hernández
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
| | - C Bacaksiz
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
- Bremen Center for Computational Material Science (BCCMS), Bremen D-28359, Germany
- Computational Science Research Center, Beijing and Computational Science and Applied Research Institute Shenzhen, Shenzhen, People's Republic of China
| | - D Šabani
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
| | - M V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
| | - F M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
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46
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Li Z, Liu X, Jiang J, Mi W, Bai H. Electric field induced reversal of spin polarization, magnetic anisotropy and tailored Dzyaloshinskii-Moriya interaction in underoxidized SrRuO 3/SrTiO 3 heterostructures. Phys Chem Chem Phys 2021; 23:3008-3018. [PMID: 33480932 DOI: 10.1039/d0cp06362b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Electric field tailored magnetic properties of the perovskite-type oxide heterostructures are important in spintronic devices with low energy consumption and small size. Here, the electric field modulated magnetic properties of underoxidized SrRuO3 (SRO)/SrTiO3 (STO) heterostructures are investigated using first-principles calculations. The spin polarization of underoxidized SRO/STO heterostructures turns from negative to positive as the electric field changes from -0.2 to 0.2 V nm-1. The underoxidized SRO/STO heterostructure with 7 SRO atomic layers turns from perpendicular magnetic anisotropy to in-plane magnetic anisotropy as the electric field turns from -0.2 to 0.2 V nm-1, which can be attributed to the in-plane dx2-y2 and out-of-plane dxz, dyz orbitals. The Dzyaloshinskii-Moriya interaction of underoxidized SRO/STO heterostructures can also be effectively tailored using an electric field. These results indicate that the use of electric field is an effective method to modulate magnetic properties of perovskite-type oxide heterostructures, which is beneficial for the development of the high-performance spintronic devices.
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Affiliation(s)
- Zengjie Li
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Xiang Liu
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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Dong Y, Wang S, Yu C, Li F, Gong J, Zhao J. First-principles explorations on P8 and N2 assembled nanowire and nanosheet. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/abd899] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Abstract
‘Bottom-up’ method is a powerful approach to design nanomaterials with desired properties. The bottle neck of being oxidized of phosphorous structures may be conquered by cluster assembling method. Here, we used P8 and N2 as assembling units to construct one-dimensional (1D) nanowire (NW) and two-dimensional (2D) nanosheet (NS), the stability, electronic and magnetic properties of these assembled nanomaterials are investigated using density functional theory (DFT) calculations. The assembled 1D-P8N2 NW and 2D-P8N4 NS are identified to possess good stability, as demonstrated by their high cohesive energies, positive phonon dispersions, and structural integrity through molecular dynamics simulations at 300 and 500 K. Moreover, they also exhibit good anti-oxidization property. The 2D-P8N4 NS is a direct bandgap semiconductor with the HSE06 gap of 2.61 eV, and shows appropriate band-edge aliments and moderate carrier mobility for photocatalyzing water splitting. The 1D-P8N2 NW is an indirect bandgap semiconductor, and Mn doping could convert it into a dilute magnetic semiconductor (DMS) with one Dirac cone in the spin-up channel, while the vdW-type sheet composed of Mn1@1D-P8N2 NWs is a ferromagnetic metal. Our theoretical study is helpful to design stable phosphorus-based nanomaterials with diverse properties and potential applications.
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Li Z, Zhang J, Zhou B. Electric polarization related Dirac half-metallicity in Mn-trihalide Janus monolayers. Phys Chem Chem Phys 2020; 22:26468-26477. [PMID: 33185231 DOI: 10.1039/d0cp05028h] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A two-dimensional Dirac half-metal system, in which the 100% spin polarization and massless Dirac fermions can coexist, will show more advantages on the efficient spin injection and high spin mobility in spintronic devices. Moreover, it is attractive to achieve out-of-plane electric polarization in addition to the Dirac half-metal behavior, because this will open a new horizon in the field of multifunctional devices. In this work, a systematic study is made of Janus monolayers of Mn2X3Y3 (X, Y = Cl, Br and I, X ≠ Y) with asymmetric out-of-plane structural configurations, based on first-principles calculations. We demonstrate that monolayer Mn2X3Y3 freestanding films will remain stable experimentally by using the stability analysis. All the Janus monolayers show a ferromagnetic ground state and maintain their original DHM behavior. However, due to the large electric polarization, the hybridization intensities of Mn and the halogen atoms on both sides of Mn2Cl3I3 are very different, resulting in an obvious distortion of the spin-polarized Dirac cone. The distorted Dirac cone is repaired by the compression, indicating that strain can improve the orbital distortion induced by the electric polarization. All Mn2X3Y3 monolayer have in-plane magnetization anisotropy, which is mainly contributed by heavy halogen elements (Br and I), and the polarized substitution and biaxial strain will not change the easy magnetization orientation of the system. Thus, the electrically polarized Dirac half-metal system has potential for application in multifunctional spintronic devices.
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Affiliation(s)
- Zheng Li
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
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Qi S, Jiang J, Mi W. Tunable valley polarization, magnetic anisotropy and Dzyaloshinskii-Moriya interaction in two-dimensional intrinsic ferromagnetic Janus 2H-VSeX (X = S, Te) monolayers. Phys Chem Chem Phys 2020; 22:23597-23608. [PMID: 33057488 DOI: 10.1039/d0cp03292a] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Two-dimensional (2D) Janus materials are a novel kind of 2D materials, which have potential applications in nanoelectronics, optoelectronics and spintronics. However, a 2D Janus material combined with intrinsic ferromagnetism, electric dipole moment, valley polarization and Dzyaloshinskii-Moriya interaction (DMI) remains rarely reported. Here, the electronic structure and magnetic properties of 2D intrinsic ferromagnetic Janus 2H-VSeX (X = S, Te) monolayers are investigated systematically using the density-functional theory. Janus 2H-VSeX (X = S, Te) monolayers are intrinsic ferromagnetic semiconductors with in-plane magnetic anisotropy (IMA). The valley splitting of Janus 2H-VSeX (X = S, Te) monolayers appears by considering the spin-orbit coupling (SOC) effect and out of plane magnetization. Additionally, spontaneous vertical electric dipole moment and a large DMI are also found in Janus 2H-VSeX (X = S, Te) monolayers due to the broken inversion symmetry. Moreover, the valley splitting and DMI can be significantly increased by applying in-plane biaxial strain. These results provide an interesting 2D intrinsic ferromagnetic Janus material, which has potential applications in spintronic and valleytronic devices.
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Affiliation(s)
- Shengmei Qi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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Chen AP, Lin W, Chen J, Feng YP. Thickness and Ferroelectric Polarization Influence on Film Magnetic Anisotropy across a Multiferroic Material Interface. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44317-44324. [PMID: 32894937 DOI: 10.1021/acsami.0c12048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ferroelectric switching effect on perpendicular magnetic anisotropy is examined for the case of the BaTiO3/L10-CoFe interface through first-principles calculations of film magnetocrystalline anisotropy energy (MAE), both with the frozen-potential method and the second-order perturbation theory. The ferroelectric switching-MAE relationship is shown to have opposite trends for BaO- and TiO2-terminated interfaces because of the distinct orbital interaction mechanisms predominant in each termination configuration. The ferroelectric switching effect, changes in Fe-O bond lengths, and termination constitute three different contributors to MAE change, each with a different penetration depth into the CoFe film. The top surface CoFe atoms are shown to feature a high density of minority-spin 3dxz states, which could play a role in influencing the ferroelectric switching-MAE relationship in cases where the top surface undergoes modifications.
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Affiliation(s)
- Andy Paul Chen
- Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106, United States
- NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, Singapore 117456, Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore
- NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, Singapore 117456, Singapore
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, Singapore 117576, Singapore
- NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, Singapore 117456, Singapore
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