Metal-insulator transition and its relation to magnetic structure in (LaMnO3)2n/(SrMnO3)n superlattices

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

The polar and nonpolar interfaces influenced of magnetism in LaMnO3-based superlattices

The interface of perovskite heterostructures has been shown to exhibit various electronic and magnetic phases such as two-dimensional electron gas, magnetism, superconductivity, and electronic phase separation. These rich phases are expected due to the strong interplay between spin, charge, and orbital degree of freedom at the interface. In this work, the polar and nonpolar interfaces are designed in LaMnO₃-based (LMO) superlattices to investigate the difference in magnetic and transport properties. For the polar interface in a LMO/SrMnO₃ superlattice, a novel robust ferromagnetism, exchange bias effect, vertical magnetization shift, and metallic behaviors coexist due to the polar catastrophe, which results in a double exchange coupling effect in the interface. For the nonpolar interface in a LMO/LaNiO₃ superlattice, only the ferromagnetism and exchange bias effect characteristics exist due to the polar continuous interface. This is attributed to the charge transfer between Mn³⁺ and Ni³⁺ ions at the interface. Therefore, transition metal oxides exhibit various novel physical properties due to the strong correlation of d electrons and the polar and nonpolar interfaces. Our observations may provide an approach to further tune the properties using the selected polar and nonpolar oxide interfaces.

The interface of perovskite heterostructures has been shown to exhibit various electronic and magnetic phases such as two-dimensional electron gas, magnetism, superconductivity, and electronic phase separation

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si

Two-dimensional electron gas (2DEG) at the interface of amorphous Al₂O₃/SrTiO₃ (aAO/STO) heterostructures has received considerable attention owing to its convenience of fabrication and relatively high mobility. The integration of these 2DEG heterostructures on a silicon wafer is highly desired for electronic applications but remains challanging up to date. Here, conductive aAO/STO heterostructures have been synthesized on a silicon wafer via a growth-and-transfer method. A scanning transmission electron microscopy image shows flat and close contact between STO membranes and a Si wafer. Electron energy loss spectroscopic measurements reveal the interfacial Ti valence state evolution, which identifies the formation of 2D charge carriers confined at the interface of aAO/STO. This work provides a feasible strategy for the integration of 2DEG on a silicon wafer and other desired substrates for potential functional and flexible electronic devices.

Magnetoresistance reversals and anomalous Hall effect in Mn3SnC and effects of carbon deficiency

The transport behavior of Mn₃SnC and Mn₃SnC_0.8compounds was investigated. Positive magnetoresistance (MR) and an anomalous Hall effect (AHE) are observed for each compound near respective Curie temperature,T_C. The positive MR is reversed during cooling fromT_Cbut is reentrant at low temperature. A 20% carbon deficiency of Mn₃SnC_0.8enlarges the positive MR atT_Cand shifts the temperatures for MR reversals. Ferromagnetic (FM) resonance measurements reveal that the MR reversals are related to the competition between FM and antiferromagnetic components of Mn atoms in each compound. A sign change of the Hall resistivity is observed during cooling of Mn₃SnC but not for Mn₃SnC_0.8. A scaling analysis suggests that the AHE in each compound is mostly due to an intrinsic contribution and that the intrinsic contribution is decreased by the carbon deficiency in Mn₃SnC_0.8.

Emergent Magnetic Fan Structures in Manganite Homojunction Arrays

Devices with tunable magnetic noncollinearity are important components of superconducting electronics and spintronics, but they typically require epitaxial integration of several complex materials. The spin-polarized neutron reflectometry measurements on La_1-x Sr_x MnO₃ homojunction arrays with modulated Sr concentration reported herein have led to the discovery of magnetic fan structures with highly noncollinear alignment of Mn spins and an emergent periodicity twice as large as the array's unit cell. The neutron data show that these magnetic superstructures can be fully long-range ordered, despite the gradual modulation of the doping level created by charge transfer and chemical intermixing. The degree of noncollinearity can be effectively adjusted by low magnetic fields. Notwithstanding their chemical and structural simplicity, oxide homojunctions thus show considerable promise as a platform for tunable complex magnetism and as a powerful design element of spintronic devices.

Room-Temperature Ferromagnetism at an Oxide-Nitride Interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of the Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via heteroanions has not been explored and the associated quantum states are unknown. Here, we report the successful epitaxial synthesis and characterization of chromium oxide (Cr_{2}O_{3})-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr^{3+} ions via anion-hybridization across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

Berry Phase Engineering in SrRuO3/SrIrO3/SrTiO3 Superlattices Induced by Band Structure Reconstruction

The Berry phase, which reveals the intimate geometrical structure underlying quantum mechanics, plays a central role in the anomalous Hall effect. In this work, we observed a sign change of Berry curvatures at the interface between the ferromagnet SrRuO₃ (SRO) layer and the SrIrO₃ (SIO) layer with strong spin-orbit coupling. The negative Berry curvature at the interface, induced by the strongly spin-orbit-coupled Ir 5d bands near the Fermi level, makes the SRO/SIO interface different from the SRO layer that has a positive Berry curvature. These opposite Berry curvatures led to two anomalous Hall effect (AHE) channels with opposite signs at the SRO/SIO interface and in the SRO layer, respectively, resulting in a hump-like feature in the Hall resistivity loop. This observation offers a straightforward explanation of the hump-like feature that is usually associated with the chiral magnetic structure or magnetic skyrmions. Hence, this study provides evidence to oppose the widely accepted claim that magnetic skyrmions induce the hump-like feature.

Synthesis and characterization of bulk Nd1-x Sr x NiO2 and Nd1-x Sr x NiO3

The recent reports of superconductivity in Nd_1-x Sr _x NiO₂/SrTiO₃ heterostructures have reinvigorated interest in potential superconductivity of low-oxidation state nickelates. Synthesis of Ni¹⁺-containing compounds is notoriously difficult. In the current work, a combined sol-gel combustion and high-pressure annealing technique was employed to prepare polycrystalline perovskite Nd_1-x Sr _x NiO₃ (x = 0, 0.1, and 0.2). Metal nitrates and metal acetates were used as starting materials, and the latter were found to be superior to the former in terms of safety and reactivity. The Nd_1-x Sr _x NiO₃ compounds were subsequently reduced to Nd_1-x Sr _x NiO₂ using calcium hydride in a sealed, evacuated quartz tube. To understand the synthesis pathway, the evolution from NdNiO₃ to NdNiO₂ was monitored using in situ synchrotron x-ray diffraction during the reduction process. Electrical transport properties were consistent with an insulator-metal transition occurring between x = 0 and 0.1 for Nd_1-x Sr _x NiO₃. Superconductivity was not observed in our bulk samples of Nd_1-x Sr _x NiO₂. Neutron diffraction experiments at 3 and 300 K were performed on Nd_0.9Sr_0.1NiO₂, in which no magnetic Bragg reflections were observed, and the results of structural Rietveld refinement are provided.

Interfacial tuning of chiral magnetic interactions for large topological Hall effects in LaMnO3/SrIrO3 heterostructures

Chiral interactions in magnetic systems can give rise to rich physics manifested, for example, as nontrivial spin textures. The foremost interaction responsible for chiral magnetism is the Dzyaloshinskii-Moriya interaction (DMI), resulting from inversion symmetry breaking in the presence of strong spin-orbit coupling. However, the atomistic origin of DMIs and their relationship to emergent electrodynamic phenomena, such as topological Hall effect (THE), remain unclear. Here, we investigate the role of interfacial DMIs in 3d-5d transition metal-oxide-based LaMnO₃/SrIrO₃ superlattices on THE from a chiral spin texture. By additively engineering the interfacial inversion symmetry with atomic-scale precision, we directly link the competition between interfacial collinear ferromagnetic interactions and DMIs to an enhanced THE. The ability to control the DMI and resulting THE points to a pathway for harnessing interfacial structures to maximize the density of chiral spin textures useful for developing high-density information storage and quantum magnets for quantum information science.

Direct experimental evidence of physical origin of electronic phase separation in manganites

Electronic phase separation in complex oxides is the inhomogeneous spatial distribution of electronic phases, involving length scales much larger than those of structural defects or nonuniform distribution of chemical dopants. While experimental efforts focused on phase separation and established its correlation with nonlinear responses under external stimuli, it remains controversial whether phase separation requires quenched disorder for its realization. Early theory predicted that if perfectly "clean" samples could be grown, both phase separation and nonlinearities would be replaced by a bicritical-like phase diagram. Here, using a layer-by-layer superlattice growth technique we fabricate a fully chemically ordered "tricolor" manganite superlattice, and compare its properties with those of isovalent alloyed manganite films. Remarkably, the fully ordered manganite does not exhibit phase separation, while its presence is pronounced in the alloy. This suggests that chemical-doping-induced disorder is crucial to stabilize the potentially useful nonlinear responses of manganites, as theory predicted.

Polaronic Emergent Phases in Manganite-based Heterostructures

Transition metal functional oxides, e.g., perovskite manganites, with strong electron, spin and lattice correlations, are well-known for different phase transitions and field-induced colossal effects at the phase transition. Recently, the interfaces between dissimilar perovskites were shown to be a promising concept for the search of emerging phases with novel functionalities. We demonstrate that the properties of manganite films are effectively controlled by low dimensional emerging phases at intrinsic and extrinsic interfaces and appeared as a result of symmetry breaking. The examples include correlated Jahn–Teller polarons in the phase-separated (La1−yPry)0.7Ca0.3MnO3, electron-rich Jahn–Teller-distorted surface or “dead” layer in La0.7Sr0.3MnO3, electric-field-induced healing of “dead” layer as an origin of resistance switching effect, and high-TC ferromagnetic emerging phase at the SrMnO3/LaMnO3 interface in superlattices. These 2D polaronic phases with short-range electron, spin, and lattice reconstructions could be extremely sensitive to external fields, thus, providing a rational explanation of colossal effects in perovskite manganites.

Strain effect on orbital and magnetic structures of Mn ions in epitaxial Nd0.35Sr0.65MnO3/SrTiO3 films using X-ray diffraction and absorption

This study probes the temperature-dependent strain that is strongly correlated with the orbital and magnetic structures of epitaxial films of Nd_0.35Sr_0.65MnO₃ (NSMO) that are fabricated by pulsed laser deposition with two thicknesses, 17 (NS17) and 103 nm (NS103) on SrTiO₃ (STO) substrate. This investigation is probed using X-ray diffraction (XRD) and absorption-based techniques, X-ray linear dichroism (XLD) and the X-ray magnetic circular dichroism (XMCD). XRD indicates a significant shift in the (004) peak position that is associated with larger strain in NS17 relative to that of NS103 at both 30 and 300 K. Experimental and atomic multiplet simulated temperature-dependent Mn L_3,2-edge XLD results reveal that the stronger strain in a thinner NS17 film causes less splitting of Mn 3d e_g state at low temperature, indicating an enhancement of orbital fluctuations in the band above the Fermi level. This greater Mn 3d orbital fluctuation can be the cause of both the enhanced ferromagnetism (FM) as a result of spin moments and the reduced Néel temperature of C-type antiferromagnetism (AFM) in NS17, leading to the FM coupling of the canted-antiferromagnetism (FM-cAFM) state in NSMO/STO epitaxial films at low temperature (T = 30 K). These findings are also confirmed by Mn L_3,2-edge XMCD measurements.

Strain-induced indirect-to-direct bandgap transition in an np-type LaAlO3/SrTiO3(110) superlattice

By applying uniaxial in-plane strains, an indirect-to-direct bandgap transition occurs in the polar LaAlO₃/SrTiO₃ (110) superlattices.

Tailoring manganese oxide with atomic precision to increase surface site availability for oxygen reduction catalysis

Controlling the structure of catalysts at the atomic level provides an opportunity to establish detailed understanding of the catalytic form-to-function and realize new, non-equilibrium catalytic structures. Here, advanced thin-film deposition is used to control the atomic structure of La_2/3Sr_1/3MnO₃, a well-known catalyst for the oxygen reduction reaction. The surface and sub-surface is customized, whereas the overall composition and d-electron configuration of the oxide is kept constant. Although the addition of SrMnO₃ benefits the oxygen reduction reaction via electronic structure and conductivity improvements, SrMnO₃ can react with ambient air to reduce the surface site availability. Placing SrMnO₃ in the sub-surface underneath a LaMnO₃ overlayer allows the catalyst to maintain the surface site availability while benefiting from improved electronic effects. The results show the promise of advanced thin-film deposition for realizing atomically precise catalysts, in which the surface and sub-surface structure and stoichiometry are tailored for functionality, over controlling only bulk compositions.

Controlling structures at the atomic level provides an opportunity to design and understand catalysts. Here the authors use thin-film deposition to fabricate perovskite heterostructures in a non-equilibrium manner to assess the effects on electrocatalytic activity for oxygen reduction.

Anion Doping of Ferromagnetic Thin Films of La0.74Sr0.26MnO3-δ via Topochemical Fluorination

Chemical doping via insertion of ions into the lattice of a host material is a key strategy to flexibly manipulate functionalities of materials. In this work, we present a novel case study on the topotactic insertion of fluoride ions into oxygen-deficient ferromagnetic thin films of La_0.74Sr_0.26MnO_3−δ (LSMO) epitaxially grown onto single-crystal SrTiO₃ (STO) substrates. The effect of fluorination on the film structure, composition, and magnetic properties is compared with the case of oxygen-deficient and fully-oxidized LSMO films. Although incorporation of F⁻ anions does not significantly alter the volume of the LSMO unit cell, a strong impact on the magnetic characteristics, including a remarkable suppression of Curie temperature and saturation magnetization accompanied by an increase in magnetic coercivity, was found. The change in magnetic properties can be ascribed to the disruption of the ferromagnetic exchange interactions along Mn-anion-Mn chains driven by F⁻ doping into the LSMO lattice. Our results indicate that F⁻ doping is a powerful means to effectively modify the magnetic functional properties of perovskite manganites.

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO₃/La_0.7Sr_0.3MnO₃ interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

Discovery of a magnetic conductive interface in PbZr0.2Ti0.8O3 /SrTiO3 heterostructures

Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the interplay between various degrees of freedom, especially those with polar discontinuities. It is desirable to explore if these structures may generate pure and controllable spin currents, which are needed to attain unmatched performance and energy efficiency in the next-generation spintronic devices. Here we report the emergence of a spin-polarized two-dimensional electron gas (SP-2DEG) at the interface of two insulators, SrTiO₃ and PbZr_0.2Ti_0.8O₃. This SP-2DEG is strongly localized at the interfacial Ti atoms, due to the interplay between Coulomb interaction and band bending, and can be tuned by the ferroelectric polarization. Our findings open a door for engineering ferroelectric/insulator interfaces to create tunable ferroic orders for magnetoelectric device applications and provide opportunities for designing multiferroic materials in heterostructures.

Two-dimensional electron gases that form in some complex oxide heterostructures may have useful functional behavior due to the interaction of the parent materials. Here the authors show that PZT/STO interfaces can host a spin-polarized electron gas, even though the bulk materials are nonmagnetic.

Engineering magnetism at functional oxides interfaces: manganites and beyond

The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T _c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

Engineering an Insulating Ferroelectric Superlattice with a Tunable Band Gap from Metallic Components

The recent discovery of "polar metals" with ferroelectriclike displacements offers the promise of designing ferroelectrics with tunable energy gaps by inducing controlled metal-insulator transitions. Here we employ first-principles calculations to design a metallic polar superlattice from nonpolar metal components and show that controlled intermixing can lead to a true insulating ferroelectric with a tunable band gap. We consider a 2/2 superlattice made of two centrosymmetric metallic oxides, La_{0.75}Sr_{0.25}MnO_{3} and LaNiO_{3}, and show that ferroelectriclike displacements are induced. The ferroelectriclike distortion is found to be strongly dependent on the carrier concentration (Sr content). Further, we show that a metal-to-insulator (MI) transition is feasible in this system via disproportionation of the Ni sites. Such a disproportionation and, hence, a MI transition can be driven by intermixing of transition metal ions between Mn and Ni layers. As a result, the energy gap of the resulting ferroelectric can be tuned by varying the degree of intermixing in the experimental fabrication method.

Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content

We report the effects of oxygen pressure during growth ([Formula: see text]) on the electronic and magnetic properties of PrAlO₃ films grown on [Formula: see text]-terminated SrTiO₃ substrates. Resistivity measurements show an increase in the sheet resistance as [Formula: see text] is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for [Formula: see text] torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the [Formula: see text] sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the [Formula: see text] torr interface ([Formula: see text] T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this [Formula: see text] torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (∼[Formula: see text]) is attributed to classical behavior due to a distribution of mobilities.

Manipulating magnetoelectric properties by interfacial coupling in La0.3Sr0.7MnO3/Ba0.7Sr0.3TiO3 superlattices

Artificial superlattices constructed with ferromagnetic La_0.7Sr_0.3MnO₃ layer and ferroelectric Ba_0.7Sr_0.3TiO₃ layer were designed and fabricated on SrTiO₃ substrates. An epitaxial growth with sharp interfaces between La_0.7Sr_0.3MnO₃ and Ba_0.7Sr_0.3TiO₃ layers was confirmed by scanning transmission electron microscopy and x-ray diffraction. An unambiguous charge transfer involving an electron transferring from the La_0.7Sr_0.3MnO₃ layers to Ba_0.7Sr_0.3TiO₃ layers (Mn³⁺→Mn⁴⁺; Ti⁴⁺→Ti³⁺) across the interface were resolved by electron energy loss spectra analysis. These observations are attributed to the possible modification in the stereochemistry of the Ti and Mn ions in the interfacial region. The out-of-plane lattice parameter, Curie temperature, and magnetoresistance are strongly affected by the thicknesses of the La_0.7Sr_0.3MnO₃ and Ba_0.7Sr_0.3TiO₃ layers. Huge magnetoresistance subsisting to low temperature was also observed in the La_0.7Sr_0.3MnO₃/Ba_0.7Sr_0.3TiO₃ superlattices. All spectral changes identified at a nanometer scale and their potential effect on the degradation of magnetic and transport properties at a macroscopic level. These findings highlight the importance of dependence on sublayer thickness, illustrating the high degree of tenability in these artificially low-dimensional oxide materials.

Interface-induced spontaneous positive and conventional negative exchange bias effects in bilayer La0.7Sr0.3MnO3/Eu0.45Sr0.55MnO3 heterostructures

We report zero-field-cooled spontaneous-positive and field-cooled conventional-negative exchange bias effects in epitaxial bilayer composed of La_0.7Sr_0.3MnO₃ (LSMO) with ferromagnetic (FM) and Eu_0.45Sr_0.55MnO₃ (ESMO) with A-type antiferromagnetic (AF) heterostructures respectively. A temperature dependent magnetization study of LSMO/ESMO bilayers grown on SrTiO₃ (001) manifest FM ordering (T_C) of LSMO at ~320 K, charge/orbital ordering of ESMO at ~194 K and AF ordering (T_N) of ESMO at ~150 K. The random field Ising model has demonstrated an interesting observation of inverse dependence of exchange bias effect on AF layer thickness due to the competition between FM-AF interface coupling and AF domain wall energy. The isothermally field induced unidirectional exchange anisotropy formed at the interface of FM-LSMO layer and the kinetically phase-arrested magnetic phase obtained from the metamagnetic AF-ESMO layer could be responsible for the spontaneous exchange bias effect. Importantly, no magnetic poling is needed, as necessary for the applications. The FM-AF interface exchange interaction has been ascribed to the AF coupling with \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sum {J}_{ex}\vec{{S}_{{\rm{FM}}}}\cdot \vec{{S}_{{\rm{AF}}}}$$\end{document}∑JexSFM⃗⋅SAF⃗ (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${J}_{ex}\approx {J}_{AF}$$\end{document}Jex≈JAF, coupling constant between AF spins) for the spontaneous positive hysteresis loop shift, and the field-cooled conventional exchange bias has been attributed to the ferromagnetically exchanged interface with \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${J}_{ex}\approx {J}_{F}$$\end{document}Jex≈JF (coupling constant between FM spins).

Charge transfer driven emergent phenomena in oxide heterostructures

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

Orientation Control of Interfacial Magnetism at La0.67Sr0.33MnO3/SrTiO3 Interfaces

Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic "dead" layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. Here, the interfacial magnetism was investigated using three identically prepared La_0.67Sr_0.33MnO₃ (LSMO) thin films grown on different oriented SrTiO₃ (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largest across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. The approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.

Interfacial Symmetry Control of Emergent Ferromagnetism at the Nanoscale

The emergence of complex new ground states at interfaces has been identified as one of the most promising routes to highly tunable nanoscale materials. Despite recent progress, isolating and controlling the underlying mechanisms behind these emergent properties remains among the most challenging materials physics problems to date. In particular, generating ferromagnetism localized at the interface of two nonferromagnetic materials is of fundamental and technological interest. Moreover, the ability to turn the ferromagnetism on and off would shed light on the origin of such emergent phenomena and is promising for spintronic applications. We demonstrate that ferromagnetism confined within one unit cell at the interface of CaRuO3 and CaMnO3 can be switched on and off by changing the symmetry of the oxygen octahedra connectivity at the boundary. Interfaces that are symmetry-matched across the boundary exhibit interfacial CaMnO3 ferromagnetism while the ferromagnetism at symmetry-mismatched interfaces is suppressed. We attribute the suppression of ferromagnetic order to a reduction in charge transfer at symmetry-mismatched interfaces, where frustrated bonding weakens the orbital overlap. Thus, interfacial symmetry is a new route to control emergent ferromagnetism in materials such as CaMnO3 that exhibit antiferromagnetism in bulk form.

Inversion of Ferrimagnetic Magnetization by Ferroelectric Switching via a Novel Magnetoelectric Coupling

Although several multiferroic materials or heterostructures have been extensively studied, finding strong magnetoelectric couplings for the electric field control of the magnetization remains challenging. Here, a novel interfacial magnetoelectric coupling based on three components (ferroelectric dipole, magnetic moment, and antiferromagnetic order) is analytically formulated. As an extension of carrier-mediated magnetoelectricity, the new coupling is shown to induce an electric-magnetic hysteresis loop. Realizations employing BiFeO_{3} bilayers grown along the [111] axis are proposed. Without involving magnetic phase transitions, the magnetization orientation can be switched by the carrier modulation driven by the field effect, as confirmed using first-principles calculations.

Interface-Driven Ferromagnetism within the Quantum Wells of a Rare Earth Titanate Superlattice

Here we present polarized neutron reflectometry measurements exploring thin film heterostructures composed of a strongly correlated Mott state, GdTiO_{3}, embedded with SrTiO_{3} quantum wells. Our results reveal that the net ferromagnetism inherent to the Mott GdTiO_{3} matrix propagates into the nominally nonmagnetic SrTiO_{3} quantum wells and tracks the magnetic order parameter of the host Mott insulating matrix. Beyond a well thickness of 5 SrO layers, the magnetic moment within the wells is dramatically suppressed, suggesting that quenched well magnetism comprises the likely origin of quantum critical magnetotransport in this thin film architecture. Our data demonstrate that the interplay between proximate exchange fields and polarity-induced carrier densities can stabilize extended magnetic states within SrTiO_{3} quantum wells.

Atomic-Scale Quantitative Analysis of Lattice Distortions at Interfaces of Two-Dimensionally Sr-Doped La2CuO4 Superlattices

Using spherical aberration corrected high-resolution and analytical scanning transmission electron microscopy, we have quantitatively studied the lattice distortion and the redistribution of charges in two-dimensionally strontium (Sr)-doped La2CuO4 superlattices, in which single LaO planes are periodically replaced by SrO planes. As shown previously, such structures show Tc up to 35 K as a consequence of local charge accumulation on both sides of the nominal SrO planes position. This is caused by two distinct mechanisms of doping: heterogeneous doping at the downward side of the interface (space-charge effect) and "classical" homogeneous doping at the upward side. The comparative chemical and atomic-structural analyses reveal an interrelation between local CuO6 octahedron distortions, hole spatial distribution, and chemical composition. In particular we observe an anomalous expansion of the apical oxygen-oxygen distance in the heterogeneously doped (space-charge) region, and a substantial shrinkage of the apical oxygen-oxygen distance in the homogeneously doped region. Such findings are interpreted in terms of different Jahn-Teller effects occurring at the two interface sides (downward and upward).

Correlating interfacial octahedral rotations with magnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices

Lattice distortion due to oxygen octahedral rotations have a significant role in mediating the magnetism in oxides, and recently attracts a lot of interests in the study of complex oxides interface. However, the direct experimental evidence for the interrelation between octahedral rotation and magnetism at interface is scarce. Here we demonstrate that interfacial octahedral rotation are closely linked to the strongly modified ferromagnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices. The maximized ferromagnetic moment in the N=6 superlattice is accompanied by a metastable structure (space group Imcm) featuring minimal octahedral rotations (a(-)a(-)c(-), α~4.2°, γ~0.5°). Quenched ferromagnetism for N<4 superlattices is correlated to a substantially enhanced c axis octahedral rotation (a(-)a(-)c(-), α~3.8°, γ~8° for N=2). Monte-Carlo simulation based on double-exchange model qualitatively reproduces the experimental observation, confirming the correlation between octahedral rotation and magnetism. Our study demonstrates that engineering superlattices with controllable interfacial structures can be a feasible new route in realizing functional magnetic materials.

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2- x Sr x NiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.

Interfacial ferromagnetism and exchange bias in CaRuO3/CaMnO3 superlattices

We have found ferromagnetism in epitaxially grown superlattices of CaRuO(3)/CaMnO(3) that arises in one unit cell at the interface. Scanning transmission electron microscopy and electron energy loss spectroscopy indicate that the difference in magnitude of the Mn valence states between the center of the CaMnO(3) layer and the interface region is consistent with double exchange interaction among the Mn ions at the interface. Polarized neutron reflectivity and the CaMnO(3) thickness dependence of the exchange bias field together indicate that the interfacial ferromagnetism is only limited to one unit cell of CaMnO(3) at each interface. The interfacial moment alternates between the 1 μ(B)/interface Mn ion for even CaMnO(3) layers and the 0.5 μ(B)/interface Mn ion for odd CaMnO(3) layers. This modulation, combined with the exchange bias, suggests the presence of a modulating interlayer coupling between neighboring ferromagnetic interfaces via the antiferromagnetic CaMnO(3) layers.

Quantum many-body interactions in digital oxide superlattices

Controlling the electronic properties of interfaces has enormous scientific and technological implications and has been recently extended from semiconductors to complex oxides that host emergent ground states not present in the parent materials. These oxide interfaces present a fundamentally new opportunity where, instead of conventional bandgap engineering, the electronic and magnetic properties can be optimized by engineering quantum many-body interactions. We use an integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy system to synthesize and investigate the electronic structure of superlattices of the Mott insulator LaMnO(3) and the band insulator SrMnO(3). By digitally varying the separation between interfaces in (LaMnO(3))(2n)/(SrMnO(3))(n) superlattices with atomic-layer precision, we demonstrate that quantum many-body interactions are enhanced, driving the electronic states from a ferromagnetic polaronic metal to a pseudogapped insulating ground state. This work demonstrates how many-body interactions can be engineered at correlated oxide interfaces, an important prerequisite to exploiting such effects in novel electronics.

Emergent phenomena at oxide interfaces

Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces. Different symmetry constraints can be used to design structures exhibiting phenomena not found in the bulk constituents. A characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale. Examples such as interface superconductivity, magneto-electric coupling, and the quantum Hall effect in oxide heterostructures are representative of the scientific and technological opportunities in this rapidly emerging field.

Near-surface structural study of transition metal oxides to understand their electronic properties

The atomic arrangement in a solid contains a great amount of information, and observation of its structure is essential for understanding the electronic and magnetic properties of transition metal oxides at a microscopic level. Increasing interest in the surfaces and interfaces of oxide systems, which is partly driven by the anticipation of device applications, enhances the importance of structural studies of the near-surface region. We review various types of structural studies with x-ray scattering on the near-surface region of metal oxides-from thick films to surfaces-in order to clarify the structural effects on their electronic properties.

Structure and properties of functional oxide thin films: insights from electronic-structure calculations

The confluence of state-of-the-art electronic-structure computations and modern synthetic materials growth techniques is proving indispensable in the search for and discovery of new functionalities in oxide thin films and heterostructures. Here, we review the recent contributions of electronic-structure calculations to predicting, understanding, and discovering new materials physics in thin-film perovskite oxides. We show that such calculations can accurately predict both structure and properties in advance of film synthesis, thereby guiding the search for materials combinations with specific targeted functionalities. In addition, because they can isolate and decouple the effects of various parameters which unavoidably occur simultaneously in an experiment-such as epitaxial strain, interfacial chemistry and defect profiles-they are able to provide new fundamental knowledge about the underlying physics. We conclude by outlining the limitations of current computational techniques, as well as some important open questions that we hope will motivate further methodological developments in the field.

Optical properties of (SrMnO₃)n/(LaMnO₃)₂n superlattices: an insulator-to-metal transition observed in the absence of disorder

We measure the optical conductivity, σ1(ω), of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n = 1, 3, 5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n ≤ 3, driven by the softening of a polaronic mid-infrared band. At n = 5 that softening is incomplete, while at the largest-period n = 8 compound the MIR band is independent of T and the SL remains insulating. One can thus first observe the IMT in a Manganite system in the absence of the disorder due to chemical doping. Unsuccessful reconstruction of the SL optical properties from those of the original bulk materials suggests that (SrMnO3)n/(LaMnO3)2n heterostructures give rise to a novel electronic state.

Controlling the magnetic properties of LaMnO3 thin films on SrTiO3(100) by deposition in a O2/Ar gas mixture

The magnetic, structural, and transport properties of pulsed-laser deposited LaMnO(3) thin films are analyzed as a function of the O(2) partial pressure in the growth environment (using an O(2)/Ar gas mixture). Interestingly, the magnetic properties do not change gradually as the O(2) content increases. Instead, ferromagnetism emerges rapidly with the oxygen; a critical amount of Ar is needed to suppress ferromagnetism effectively in LaMnO(3) thin films. The most dramatic suppression of ferromagnetism occurs only in the narrow window below 10% oxygen, where the ferromagnetic moments decrease by a factor of 17. Above a certain oxygen concentration, the ferromagnetic moment no longer increases with oxygen. The sample grown in pure oxygen shows a metal-insulator transition at ∼200 K, but exhibits an insulating behavior again below ∼150 K. This intermediate metallic behavior is significantly suppressed by using the O(2)/Ar gas mixture.

Enhanced ordering temperatures in antiferromagnetic manganite superlattices

The disorder inherent to doping by cation substitution in the complex oxides can have profound effects on collective-ordered states. Here, we demonstrate that cation-site ordering achieved through digital-synthesis techniques can dramatically enhance the antiferromagnetic ordering temperatures of manganite films. Cation-ordered (LaMnO3)m/(SrMnO3)2m superlattices show Néel temperatures (TN) that are the highest of any La(1-x)Sr(x)MnO3 compound, approximately 70 K greater than compositionally equivalent randomly doped La(1/3)Sr(2/3)MnO3. The antiferromagnetic order is A-type, consisting of in-plane double-exchange-mediated ferromagnetic sheets coupled antiferromagnetically along the out-of-plane direction. Through synchrotron X-ray scattering, we have discovered an in-plane structural modulation that reduces the charge itinerancy and hence the ordering temperature within the ferromagnetic sheets, thereby limiting TN. This modulation is mitigated and driven to long wavelengths by cation ordering, enabling the higher TN values of the superlattices. These results provide insight into how cation-site ordering can enhance cooperative behaviour in oxides through subtle structural phenomena.

Exchange bias driven by the Dzyaloshinskii-Moriya interaction and ferroelectric polarization at G-type antiferromagnetic perovskite interfaces

Exchange bias is usually rationalized invoking spin pinning effects caused by uncompensated antiferromagnetic interfaces. However, for compensated antiferromagnets other extrinsic factors, such as interface roughness or spin canting, have to be considered to produce a small uncompensation. As an alternative, here we propose two (related) possible mechanisms, driven by the intrinsic Dzyaloshinskii-Moriya interaction and ferroelectric polarization, for the explanation of exchange bias effects in perovskites with compensated G-type antiferromagnetism. One of the mechanisms is only active when a multiferroic material is involved and it is controllable by electric fields.

Superconducting transition at 38 K in insulating-overdoped La2CuO4-La1.64Sr0.36CuO4 superlattices: evidence for interface electronic redistribution from resonant soft X-ray scattering

We use resonant soft x-ray scattering (RSXS) to quantify the hole distribution in a superlattice of insulating La2CuO4 (LCO) and overdoped La2-xSrxCuO4 (LSCO). Despite its nonsuperconducting constituents, this structure is superconducting with T_{c}=38 K. We found that the conducting holes redistribute electronically from LSCO to the LCO layers. The LCO layers were found to be optimally doped, suggesting they are the main drivers of superconductivity. Our results demonstrate the utility of RSXS for separating electronic from structural effects at oxide interfaces.