Nanoscale optical electrometer

Engineering colloidal semiconductor nanocrystals for quantum information processing

Quantum information processing-which relies on spin defects or single-photon emission-has shown quantum advantage in proof-of-principle experiments including microscopic imaging of electromagnetic fields, strain and temperature in applications ranging from battery research to neuroscience. However, critical gaps remain on the path to wider applications, including a need for improved functionalization, deterministic placement, size homogeneity and greater programmability of multifunctional properties. Colloidal semiconductor nanocrystals can close these gaps in numerous application areas, following years of rapid advances in synthesis and functionalization. In this Review, we specifically focus on three key topics: optical interfaces to long-lived spin states, deterministic placement and delivery for sensing beyond the standard quantum limit, and extensions to multifunctional colloidal quantum circuits.

Electric-Field Fluctuations as the Cause of Spectral Instabilities in Colloidal Quantum Dots

Spectral diffusion (SD) represents a substantial obstacle toward implementation of solid-state quantum emitters as a source of indistinguishable photons. By performing high-resolution emission spectroscopy for individual colloidal quantum dots at cryogenic temperatures, we prove the causal link between the quantum-confined Stark effect and SD. Statistically analyzing the wavelength of emitted photons, we show that increasing the sensitivity of the transition energy to an applied electric field results in amplified spectral fluctuations. This relation is quantitatively fit to a straightforward model, indicating the presence of a stochastic electric field on a microscopic scale, whose standard deviation is 9 kV/cm, on average. The current method will enable the study of SD in multiple types of quantum emitters such as solid-state defects or organic lead halide perovskite quantum dots, for which spectral instability is a critical barrier for applications in quantum sensing.

Dynamical Behavior of Two Interacting Double Quantum Dots in 2D Materials for Feasibility of Controlled-NOT Operation

Two interacting double quantum dots (DQDs) can be suitable candidates for operation in the applications of quantum information processing and computation. In this work, DQDs are modeled by the heterostructure of two-dimensional (2D) MoS₂ having 1T-phase embedded in 2H-phase with the aim to investigate the feasibility of controlled-NOT (CNOT) gate operation with the Coulomb interaction. The Hamiltonian of the system is constructed by two models, namely the 2D electronic potential model and the 4×4 matrix model whose matrix elements are computed from the approximated two-level systems interaction. The dynamics of states are carried out by the Crank-Nicolson method in the potential model and by the fourth order Runge-Kutta method in the matrix model. Model parameters are analyzed to optimize the CNOT operation feasibility and fidelity, and investigate the behaviors of DQDs in different regimes. Results from both models are in excellent agreement, indicating that the constructed matrix model can be used to simulate dynamical behaviors of two interacting DQDs with lower computational resources. For CNOT operation, the two DQD systems with the Coulomb interaction are feasible, though optimization of engineering parameters is needed to achieve optimal fidelity.

Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions

Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. In transition metal dichalcogenide-based systems, the moiré potential landscape can trap interlayer excitons (IXs) at specific atomic registries. Here, we report that spatially isolated trapped IXs in a molybdenum diselenide/tungsten diselenide heterobilayer device provide a sensitive optical probe of carrier filling in their immediate environment. By mapping the spatial positions of individual trapped IXs, we are able to spectrally track the emitters as the moiré lattice is filled with excess carriers. Upon initial doping of the heterobilayer, neutral trapped IXs form charged IXs (IX trions) uniformly with a binding energy of ~7 meV. Upon further doping, the empty superlattice sites sequentially fill, creating a Coulomb staircase: stepwise changes in the IX trion emission energy due to Coulomb interactions with carriers at nearest-neighbour moiré sites. This non-invasive, highly local technique can complement transport and non-local optical sensing techniques to characterize Coulomb interaction energies, visualize charge correlated states, or probe local disorder in a moiré superlattice.

Nanoscopic Charge Fluctuations in a Gallium Phosphide Waveguide Measured by Single Molecules

We present efficient evanescent coupling of single organic molecules to a gallium phosphide (GaP) subwavelength waveguide (nanoguide) decorated with microelectrodes. By monitoring their Stark shifts, we reveal that the coupled molecules experience fluctuating electric fields. We analyze the spectral dynamics of different molecules over a large range of optical powers in the nanoguide to show that these fluctuations are light-induced and local. A simple model is developed to explain our observations based on the optical activation of charges at an estimated mean density of 2.5×10^{22}  m^{-3} in the GaP nanostructure. Our work showcases the potential of organic molecules as nanoscopic sensors of the electric charge as well as the use of GaP nanostructures for integrated quantum photonics.

Polariton Electric-Field Sensor

We experimentally demonstrate a dipolar polariton based electric-field sensor. We tune and optimize the sensitivity of the sensor by varying the dipole moment of polaritons. We show polariton interactions play an important role in determining the conditions for optimal electric-field sensing, and achieve a sensitivity of 0.12   V m^{-1} Hz^{-0.5}. Finally, we apply the sensor to illustrate that excitation of polaritons modifies the electric field in a spatial region much larger than the optical excitation spot.

Electrical and optical control of single spins integrated in scalable semiconductor devices

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.

Environmental Electrometry with Luminescent Carbon Nanotubes

We demonstrate that localized excitons in luminescent carbon nanotubes can be utilized to study electrostatic fluctuations in the nanotube environment with sensitivity down to the elementary charge. By monitoring the temporal evolution of the cryogenic photoluminescence from individual carbon nanotubes grown on silicon oxide and hexagonal boron nitride, we characterize the dynamics of charge trap defects for both dielectric supports. We find a one order of magnitude reduction in the photoluminescence spectral wandering for nanotubes on extended atomically flat terraces of hexagonal boron nitride. For nanotubes on hexagonal boron nitride with pronounced spectral fluctuations, our analysis suggests proximity to terrace ridges where charge fluctuators agglomerate to exhibit areal densities exceeding those of silicon oxide. Our results establish carbon nanotubes as sensitive probes of environmental charge fluctuations and highlight their potential for applications in electrometric nanodevices with all-optical readout.

Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure

The optical properties of atomically thin semiconductor materials have been widely studied because of the isolation of monolayer transition metal dichalcogenides (TMDCs). They have rich optoelectronic properties owing to their large direct bandgap, the interplay between the spin and the valley degree of freedom of charge carriers, and the recently discovered localized excitonic states giving rise to single photon emission. In this Letter, we study the quantum-confined Stark effect of these localized emitters present near the edges of monolayer tungsten diselenide (WSe₂). By carefully designing sequences of metallic (graphene), insulating (hexagonal boron nitride), and semiconducting (WSe₂) two-dimensional materials, we fabricate a van der Waals heterostructure field effect device with WSe₂ hosting quantum emitters that is responsive to external static electric field applied to the device. A very efficient spectral tunability up to 21 meV is demonstrated. Further, evaluation of the spectral shift in the photoluminescence signal as a function of the applied voltage enables us to extract the polarizability volume (up to 2000 ų) as well as information on the dipole moment of an individual emitter. The Stark shift can be further modulated on application of an external magnetic field, where we observe a flip in the sign of dipole moment possibly due to rearrangement of the position of electron and hole wave functions within the emitter.

Sensing of single electrons using micro and nano technologies: a review

During the last three decades, the remarkable dynamic features of microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), and advances in solid-state electronics hold much potential for the fabrication of extremely sensitive charge sensors. These sensors have a broad range of applications, such as those involving the measurement of ionization radiation, detection of bio-analyte and aerosol particles, mass spectrometry, scanning tunneling microscopy, and quantum computation. Designing charge sensors (also known as charge electrometers) for electrometry is deemed significant because of the sensitivity and resolution issues in the range of micro- and nano-scales. This article reviews the development of state-of-the-art micro- and nano-charge sensors, and discusses their technological challenges for practical implementation.

A sensitive electrometer based on a Rydberg atom in a Schrödinger-cat state

Fundamental quantum fluctuations caused by the Heisenberg principle limit measurement precision. If the uncertainty is distributed equally between conjugate variables of the meter system, the measurement precision cannot exceed the standard quantum limit. When the meter is a large angular momentum, going beyond the standard quantum limit requires non-classical states such as squeezed states or Schrödinger-cat-like states. However, the metrological use of the latter has been so far restricted to meters with a relatively small total angular momentum because the experimental preparation of these non-classical states is very challenging. Here we report a measurement of an electric field based on an electrometer consisting of a large angular momentum (quantum number J ≈ 25) carried by a single atom in a high-energy Rydberg state. We show that the fundamental Heisenberg limit can be approached when the Rydberg atom undergoes a non-classical evolution through Schrödinger-cat states. Using this method, we reach a single-shot sensitivity of 1.2 millivolts per centimetre for a 100-nanosecond interaction time, corresponding to 30 microvolts per centimetre per square root hertz at our 3 kilohertz repetition rate. This highly sensitive, non-invasive space- and time-resolved field measurement extends the realm of electrometric techniques and could have important practical applications: detection of individual electrons in mesoscopic devices at a distance of about 100 micrometres with a megahertz bandwidth is within reach.

Voltage-controlled quantum light from an atomically thin semiconductor

Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated. In this Letter we demonstrate the possibility of leveraging the atomically thin semiconductor tungsten diselenide (WSe2) as a host for quantum dot-like defects. We report that this previously unexplored solid-state quantum emitter in WSe2 generates single photons with emission properties that can be controlled via the application of external d.c. electric and magnetic fields. These new optically active quantum dots exhibit excited-state lifetimes on the order of 1 ns and remarkably large excitonic g-factors of 10. It is anticipated that WSe2 quantum dots will provide a novel platform for integrated solid-state quantum photonics and quantum information processing, as well as a rich condensed-matter physics playground with which to explore the coupling of quantum dots and atomically thin semiconductors.

Radio-frequency magnetometry using a single electron spin

We experimentally demonstrate a simple and robust protocol for the detection of weak radio-frequency magnetic fields using a single electron spin in diamond. Our method relies on spin locking, where the Rabi frequency of the spin is adjusted to match the MHz signal frequency. In a proof-of-principle experiment we detect a 7.5 MHz magnetic probe field of ~40 nT amplitude with <10 kHz spectral resolution. Rotating-frame magnetometry may provide a direct and sensitive route to high-resolution spectroscopy of nanoscale nuclear spin signals.

Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ±5  nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.