1
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Ghasemzadeh F, Farokhnezhad M, Esmaeilzadeh M. Ultrafast switching in spin field-effect transistors based on borophene nanoribbons. Phys Chem Chem Phys 2024; 26:13061-13069. [PMID: 38628071 DOI: 10.1039/d4cp00239c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Borophene, owing to the high mobility and long spin coherent length of its carriers, presents significant opportunities in ultrafast spintronics. In this research, we investigate the spin-dependent conductance of a Datta-Das field-effect transistor (FET) based on an armchair β12-borophene nanoribbon (BNR) using the tight-binding (TB) Hamiltonian in combination with the non-equilibrium Green's function (NEGF) method. The spin FET electrodes are magnetized by ferromagnetic (FM) insulators arranged in both parallel and anti-parallel configurations. This device acts as a controllable spin filter in the presence of Rashba spin-orbit coupling (SOC) for both configurations and its spin current is well modulated by a gate voltage and the strength of the Rashba SOC. For anti-parallel configurations, an energy gap emerges within a certain range of incoming electron energy which can disappear for electrons with flipped spin under the Rashba SOC. Furthermore, our findings indicate that the electron-electron (e-e) interaction helps the spin precession of electrons injected into the spin FET channel, thereby strengthening the Rashba SOC effect. Notably, a gate voltage can adjust the current-voltage (I-V) characteristics of this device. Finally, our calculations demonstrate that under the same conditions, the current magnitude and Ion/Ioff ratio of borophene spin FETs are several times higher than those of graphene and silicene spin FETs.
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Affiliation(s)
- Farzaneh Ghasemzadeh
- Department of Physics, Iran University of Science and Technology, Narmak, Tehran 16844, Iran.
| | - Mohsen Farokhnezhad
- Department of Physics, School of Science, Shiraz University, Shiraz 71946-84795, Iran.
| | - Mahdi Esmaeilzadeh
- Department of Physics, Iran University of Science and Technology, Narmak, Tehran 16844, Iran.
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2
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Pan CR, Chou MY. Energetically Favored 2D to 3D Transition: Why Silicene Cannot Be Grown on Ag(111). NANO LETTERS 2024; 24:4172-4177. [PMID: 38502098 PMCID: PMC11010229 DOI: 10.1021/acs.nanolett.4c00140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 03/10/2024] [Accepted: 03/13/2024] [Indexed: 03/20/2024]
Abstract
Silicene, a two-dimensional (2D) Si monolayer with properties similar to those of graphene, has attracted considerable attention because of its compatibility with existing technology. Most growth efforts to date have focused on the Ag(111) substrate, with a 3 × 3 phase widely reported below one monolayer (ML). As the coverage increases, a √3 × √3 pattern frequently emerges, which has been proposed by various experimental investigations as a Si ( 111 ) - 3 × 3 - Ag reconstructed structure. We report first-principles calculations to understand this series of observations. A major finding from our energetics studies is that Si growth on Ag(111) beyond one ML will switch to the Volmer-Weber mode, forming three-dimensional sp3 films. Combining with the condition that the 3 × 3 monolayer on Ag(111) does not have the correct buckling pattern of freestanding silicene, we conclude that silicene cannot be grown on Ag(111) and that a 2D to 3D transition is energetically favored beyond one ML.
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Affiliation(s)
- Chi-Ruei Pan
- School
of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 11529, Taiwan
| | - Mei-Yin Chou
- School
of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 11529, Taiwan
- Department
of Physics, National Taiwan University, Taipei 10617, Taiwan
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3
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Wang K, Prévot G, Aqua JN. Anomalous intralayer growth of epitaxial Si on Ag(111). Sci Rep 2024; 14:2401. [PMID: 38287099 PMCID: PMC10825137 DOI: 10.1038/s41598-024-52348-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Accepted: 01/17/2024] [Indexed: 01/31/2024] Open
Abstract
The epitaxial growth of silicene has been the subject of many investigations, controversies and non-classical results. In particular, the initially promising deposition of Si on a metallic substrate such as Ag(111) has revealed unexpected growth modes where Si is inserted at the beginning of the growth in the first atomic plane of the substrate. In order to rationalize this anomalous growth mode, we develop an out-of-equilibrium description of a lattice-based epitaxial growth model, which growth dynamics are analyzed via kinetic Monte-Carlo simulations. This model incorporates several effects revealed by the experiments such as the intermixing between Si and Ag, and surface effects. It is parametrized thanks to an approach in which we show that relatively precise estimates of energy barriers can be deduced by meticulous analysis of atomic microscopy images. This analysis enables us to reproduce both qualitatively and quantitatively the anomalous growth patterns of Si on Ag(111). We show that the dynamics results in two modes, a classical sub-monolayer growth mode at low temperature, and an inserted growth mode at higher temperatures, where the deposited Si atoms insert in the first layer of the substrate by replacing Ag atoms. Furthermore, we reproduce the non-standard [Formula: see text] shape of the experimental plot of the island density as a function of temperature, with a shift in island density variation during the transition between the submonoloyer and inserted growth modes.
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Affiliation(s)
- Kejian Wang
- Sorbonne Université, Centre National de la Recherche Scientifique, Institut des NanoSciences de Paris, INSP, 4, place Jussieu, 75005, Paris, France
| | - Geoffroy Prévot
- Sorbonne Université, Centre National de la Recherche Scientifique, Institut des NanoSciences de Paris, INSP, 4, place Jussieu, 75005, Paris, France
| | - Jean-Noël Aqua
- Sorbonne Université, Centre National de la Recherche Scientifique, Institut des NanoSciences de Paris, INSP, 4, place Jussieu, 75005, Paris, France.
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4
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Song Z, Hou J, Raguin E, Pedersen A, Eren EO, Senokos E, Tarakina NV, Giusto P, Antonietti M. Triazine-Based Graphitic Carbon Nitride Thin Film as a Homogeneous Interphase for Lithium Storage. ACS NANO 2024; 18:2066-2076. [PMID: 38193893 PMCID: PMC10811665 DOI: 10.1021/acsnano.3c08771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 12/29/2023] [Accepted: 01/04/2024] [Indexed: 01/10/2024]
Abstract
Triazine-based graphitic carbon nitride is a semiconductor material constituted of cross-linked triazine units, which differs from widely reported heptazine-based carbon nitrides. Its triazine-based structure gives rise to significantly different physical chemical properties from the latter. However, it is still a great challenge to experimentally synthesize this material. Here, we propose a synthesis strategy via vapor-metal interfacial condensation on a planar copper substrate to realize homogeneous growth of triazine-based graphitic carbon nitride films over large surfaces. The triazine-based motifs are clearly shown in transmission electron microscopy with high in-plane crystallinity. An AB-stacking arrangement of the layers is orientationlly parallel to the substrate surface. Eventually, the as-prepared films show dense electrochemical lithium deposition attributed to homogeneous charge transport within this thin film interphase, making it a promising solution for energy storage.
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Affiliation(s)
- Zihan Song
- Colloid
Chemistry Department, Max Planck Institute
of Colloids and Interfaces, Potsdam 14476, Germany
| | - Jing Hou
- Colloid
Chemistry Department, Max Planck Institute
of Colloids and Interfaces, Potsdam 14476, Germany
| | - Emeline Raguin
- Biomaterials
Department, Max Planck Institute of Colloids
and Interfaces, Potsdam 14476, Germany
| | - Angus Pedersen
- Department
of Chemical Engineering, Imperial College
London, SW7 2AZ London, U.K.
- Department
of Materials, Imperial College London, SW7 2AZ London, U.K.
| | - Enis Oǧuzhan Eren
- Colloid
Chemistry Department, Max Planck Institute
of Colloids and Interfaces, Potsdam 14476, Germany
| | - Evgeny Senokos
- Colloid
Chemistry Department, Max Planck Institute
of Colloids and Interfaces, Potsdam 14476, Germany
| | - Nadezda V. Tarakina
- Colloid
Chemistry Department, Max Planck Institute
of Colloids and Interfaces, Potsdam 14476, Germany
| | - Paolo Giusto
- Colloid
Chemistry Department, Max Planck Institute
of Colloids and Interfaces, Potsdam 14476, Germany
| | - Markus Antonietti
- Colloid
Chemistry Department, Max Planck Institute
of Colloids and Interfaces, Potsdam 14476, Germany
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5
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Wang L, Yin S, Yang J, Dou SX. Moiré Superlattice Structure in Two-Dimensional Catalysts: Synthesis, Property and Activity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300165. [PMID: 36974572 DOI: 10.1002/smll.202300165] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 03/02/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) layered materials have been widely used as catalysts due to their high specific surface area, large fraction of uncoordinated surface atoms, and high charge carrier mobility. Moiré superlattice emerges in 2D layered materials with twist angle or lattice mismatch. By manipulating the moiré superlattice structure, 2D layered materials present modulated electronic band structure, topological edge states, and unconventional superconductivity which are tightly associated with the performance of catalysts. Hence, engineering moiré superlattice structures are proposed to be an important technology in modifying 2D layered materials for improved catalytic properties. However, currently, the investigation of moiré superlattice structure in a catalytic application is still in its infancy. This perspective starts with the discussion of structural features and fabrication strategy of 2D materials with moiré superlattice structure. Afterward, the catalytic applications, including electrocatalytic and photocatalytic applications, are summarized. In particular, the promotion mechanism of the catalytic performance caused by the moiré superlattice structure is proposed. Finally, the perspective is concluded by outlining the remaining challenges and possible solutions for the future development of 2D materials with moiré superlattice structure towards the catalytic applications.
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Affiliation(s)
- Li Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Sisi Yin
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Jianping Yang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Shi Xue Dou
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, NSW, 2500, Australia
- Institute of Energy Materials Science, University of Shanghai for Science and Technology, Shanghai, 200093, China
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6
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Masson L, Prévot G. Epitaxial growth and structural properties of silicene and other 2D allotropes of Si. NANOSCALE ADVANCES 2023; 5:1574-1599. [PMID: 36926561 PMCID: PMC10012843 DOI: 10.1039/d2na00808d] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Accepted: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Since the breakthrough of graphene, considerable efforts have been made to search for two-dimensional (2D) materials composed of other group 14 elements, in particular silicon and germanium, due to their valence electronic configuration similar to that of carbon and their widespread use in the semiconductor industry. Silicene, the silicon counterpart of graphene, has been particularly studied, both theoretically and experimentally. Theoretical studies were the first to predict a low-buckled honeycomb structure for free-standing silicene possessing most of the outstanding electronic properties of graphene. From an experimental point of view, as no layered structure analogous to graphite exists for silicon, the synthesis of silicene requires the development of alternative methods to exfoliation. Epitaxial growth of silicon on various substrates has been widely exploited in attempts to form 2D Si honeycomb structures. In this article, we provide a comprehensive state-of-the-art review focusing on the different epitaxial systems reported in the literature, some of which having generated controversy and long debates. In the search for the synthesis of 2D Si honeycomb structures, other 2D allotropes of Si have been discovered and will also be presented in this review. Finally, with a view to applications, we discuss the reactivity and air-stability of silicene as well as the strategy devised to decouple epitaxial silicene from the underlying surface and its transfer to a target substrate.
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Affiliation(s)
| | - Geoffroy Prévot
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP F-75005 Paris France
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7
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Huang CS. Photoinduced spin-polarized transport and controllable valley-triplet pairing states in a silicene-superconductor junction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:155001. [PMID: 36764001 DOI: 10.1088/1361-648x/acbb4a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2022] [Accepted: 02/10/2023] [Indexed: 06/18/2023]
Abstract
We theoretically investigate the spin-polarized subgap transport and valley-triplet pairing states in a silicene-superconductor junction. By using the nonequilibrium Green's function, it is found that the subgap conductance is strongly affected by the spin polarization induced by an off-resonant circularly polarized light. More importantly, the presence of valley-mixing scattering at the interface could result in a valley-triplet Andreev reflection (AR) process, where the incident electrons and reflected holes come from the same valley. We also find that the amplitude of the valley-triplet AR is controllable by tuning the intensity of the light, the position of the Fermi level, and even the interface coupling strength. Particularly, the fully valley-polarized conductance spectrum shows distinctive behaviors, which is beneficial for us to verify and detect the possible valley-triplet pairing states as well as the spin/valley polarizations in silicene. Our results may pave the way for the applications of silicene in spin-valleytronics.
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Affiliation(s)
- Chuan-Shuai Huang
- Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
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8
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Shan G, Tan H, Ma R, Zhao H, Huang W. Recent progress in emergent two-dimensional silicene. NANOSCALE 2023; 15:2982-2996. [PMID: 36655560 DOI: 10.1039/d2nr05809j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Although graphene is by far the most famous example of two-dimensional (2D) materials, which exhibits a wealth of exotic and intriguing properties, it suffers from a severe drawback. In this regard, the exploration of silicene, the silicon analog of the graphene material, has attracted substantial interest in the past decade. This review therefore provides a comprehensive survey of recent theoretical and experimental works on this 2D material. We first overview the distinctive structures and properties of silicene, including mechanical, electronic, and spintronic properties. We then discuss the growth and experimental characterization of silicene on Ag(111) and other different substrates, providing insights into the different phases or atomic arrangements of silicene observed on the metallic surfaces as well as on its electronic structures. Then, the recent state-of-the-art applications of silicene are summarized in section 4 with the aim to break the scientific and engineering barriers for application in nanoelectronics, sensors, energy storage devices, electrode materials, and quantum technology. Finally, the concluding remarks and the future prospects of silicene are also provided.
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Affiliation(s)
- Guangcun Shan
- School of Instrumentation Science and Opto-electronic Engineering, Beihang University, No. 37 XueYuan Road, Beijing 100083, China.
- Institute of Experimental Physics, Saarland University, 66123 Saarbrücken, Germany
| | - Haoyi Tan
- School of Instrumentation Science and Opto-electronic Engineering, Beihang University, No. 37 XueYuan Road, Beijing 100083, China.
| | - Ruguang Ma
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China.
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
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9
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Villasana-Mercado P, Rojas-Briseño JG, Molina-Valdovinos S, Rodríguez-Vargas I. Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:085302. [PMID: 36540932 DOI: 10.1088/1361-648x/acaae2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 12/12/2022] [Indexed: 06/17/2023]
Abstract
Magnetic silicene superlattices (MSSLs) are versatile structures with spin-valley polarization and tunneling magnetoresistance (TMR) capabilities. However, the oscillating transport properties related to the superlattice periodicity impede stable spin-valley polarization states reachable by reversing the magnetization direction. Here, we show that aperiodicity can be used to improve the spin-valley polarization and TMR by reducing the characteristic conductance oscillations of periodic MSSLs (P-MSSLs). Using the Landauer-Büttiker formalism and the transfer matrix method, we investigate the spin-valley polarization and the TMR of Fibonacci (F-) and Thue-Morse (TM-) MSSLs as typical aperiodic superlattices. Our findings indicate that aperiodic superlattices with higher disorder provide better spin-valley polarization and TMR values. In particular, TM-MSSLs reduce considerably the conductance oscillations giving rise to two well-defined spin-valley polarization states and a better TMR than F- and P-MSSLs. F-MSSLs also improve the spin-valley polarization and TMR, however they depend strongly on the parity of the superlattice generation.
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Affiliation(s)
- P Villasana-Mercado
- Unidad Académica de Ciencia y Tecnología de la Luz y la Materia, Universidad Autónoma de Zacatecas, Circuto Marie Curie S/N, Parque de Ciencia y Tecnología QUANTUM Ciudad del Conocimiento, 98160 Zacatecas, Zacatecas, Mexico
| | - J G Rojas-Briseño
- Unidad Académica de Ciencia y Tecnología de la Luz y la Materia, Universidad Autónoma de Zacatecas, Circuto Marie Curie S/N, Parque de Ciencia y Tecnología QUANTUM Ciudad del Conocimiento, 98160 Zacatecas, Zacatecas, Mexico
| | - S Molina-Valdovinos
- Unidad Académica de Ciencia y Tecnología de la Luz y la Materia, Universidad Autónoma de Zacatecas, Circuto Marie Curie S/N, Parque de Ciencia y Tecnología QUANTUM Ciudad del Conocimiento, 98160 Zacatecas, Zacatecas, Mexico
| | - I Rodríguez-Vargas
- Unidad Académica de Ciencia y Tecnología de la Luz y la Materia, Universidad Autónoma de Zacatecas, Circuto Marie Curie S/N, Parque de Ciencia y Tecnología QUANTUM Ciudad del Conocimiento, 98160 Zacatecas, Zacatecas, Mexico
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10
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Shao J, Kan E, Qian Y, Wu H. Several semiconducting two-dimensional silicon nanosheets assembled from zigzag silicene nanoribbons. NANOSCALE 2022; 14:14038-14045. [PMID: 36111827 DOI: 10.1039/d2nr04078f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Semiconducting two-dimensional intrinsic silicon nanosheets are ideal materials for many applications in modern industry, since they are the only ones that can match well with previous silicon components. However, such materials are still lacking, especially those with moderate band gaps. In this work, by using first-principles theory, a series of two-dimensional intrinsic silicon nanosheets are assembled from zigzag silicene nanoribbons with different widths. The result shows that all the nanosheets behave as semiconductors, although some of them possess small band gaps of dozens of meV. Two of them, individually assembled from the two narrowest zigzag silicene nanoribbons, possess the largest indirect band gaps of 0.20 and 0.26 eV, respectively. Under low compressive strain, these two nanosheets would turn into quasi-direct or direct band gap semiconductors, and the gaps increase up to 0.62 or 0.54 eV, respectively. Due to the electron transfer from three-fold to four-fold coordinated Si atoms, the charge carriers prefer to transport along the zigzag direction, and electrons and holes transport in the respective Si chains. Interestingly, the investigation of Poisson's ratio reveals that the assembled silicon nanosheets have a negative Poisson's ratio in certain strain ranges if the width n of zigzag silicene nanoribbons is even. This work provides a new approach to design semiconducting silicon nanosheets and benefits to the applications of two-dimensional silicon nanosheets in many electronic and mechanical fields.
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Affiliation(s)
- Jinfan Shao
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Erjun Kan
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yan Qian
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Haiping Wu
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
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11
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Electronic structure and optical properties of B-, N-, and BN-doped black phosphorene using the first-principles. J Mol Model 2022; 28:233. [PMID: 35882669 DOI: 10.1007/s00894-022-05236-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/14/2022] [Indexed: 10/16/2022]
Abstract
The structural stability, electronic structure, and optical properties of BN-doped black phosphorene systems at different concentrations were investigated using a density generalized theory approach based on the first principles. BN-doped black phosphorene was found to be more stable than B and N atom doping. With the increase of doping concentration, the stability of the structure gradually decreases, and the structure of the system with 25% doping concentration is the most stable. The intrinsic and N-doped black phosphorenes are direct bandgap semiconductors, and B and BN doping make the black phosphorene change from direct bandgap to the indirect bandgap. The total density of states is mainly contributed by the p-state electrons of the B and P atoms, and the N atoms have a role in the local density of states with little contribution to the overall one. The black phosphorene undergoes charge transfer between the B and N atoms. The amount of charge transfer increases with the increase of doping concentration. The BN-doped black phosphorene system is blue-shifted at the absorption and reflection peaks compared to the intrinsic black phosphorene system. From the dielectric constant, it is found that the doped system is shifted towards higher energy at the highest peak, leading to an increase in the intensity of the electric field generated by light, which is beneficial to increase the efficiency of photovoltaic power generation. The photoconductivity decreases and shifts toward higher energy after doping, with the most pronounced performance at BN doping concentrations of 12.5% and 25%.
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Li B, Wang J, Wu Q, Tian Q, Li P, Zhang L, Yin LJ, Tian Y, Johnny Wong PK, Qin Z, Zhang L. Nanopore-Patterned CuSe Drives the Realization of the PbSe-CuSe Lateral Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32738-32746. [PMID: 35802412 DOI: 10.1021/acsami.2c08397] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO3 substrate successfully, but the corresponding signature of the TCI was only observed for films not thinner than seven monolayers, largely due to interfacial strain. Here, we demonstrate a two-step method based on molecular beam epitaxy for the growth of the PbSe-CuSe lateral heterostructure on the Cu(111) substrate, in which we observe a nanopore-patterned CuSe layer that acts as the template for lateral epitaxial growth of PbSe. This further results in a PbSe-CuSe lateral heterostructure with an atomically sharp interface. Scanning tunneling microscopy and spectroscopy measurements reveal a fourfold symmetric square lattice of such PbSe with a quasi-particle band gap of 1.8 eV, a value highly comparable with the theoretical value of freestanding PbSe. The weak monolayer-substrate interaction is further supported by both density functional theory (DFT) and projected crystal orbital Hamilton population, with the former predicting the monolayer's anti-bond state to reside below the Fermi level. Our work demonstrates a practical strategy to fabricate a high-quality in-plane heterostructure, involving a monolayer TCI, which is viable for further exploration of the topology-derived quantum physics and phenomena in the monolayer limit.
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Affiliation(s)
- Bo Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Jing Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qiwei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Li
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum Systems, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Kwan Johnny Wong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- Shaanxi & NPU Chongqing Technology Innovation Center, Chongqing 400000, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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13
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Zhan L, Fang Y, Zhang R, Lu X, Lü TY, Cao X, Zhu Z, Wu S. Quantum spin Hall effect in tilted penta silicene and its isoelectronic substitutions. Phys Chem Chem Phys 2022; 24:15201-15207. [PMID: 35612307 DOI: 10.1039/d2cp01390h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Silicene, a competitive two-dimensional (2D) material for future electronic devices, has attracted intensive attention in condensed matter physics. Utilizing an adaptive genetic algorithm (AGA), we identify a topological allotrope of silicene, named tilted penta (tPenta) silicene. Based on first-principles calculations, the geometric and electronic properties of tPenta silicene and its isoelectronic substitutions (Ge, Sn) are investigated. Our results indicate that tPenta silicene exhibits a semimetallic state with distorted Dirac cones in the absence of spin-orbit coupling (SOC). When SOC is considered, it shows semiconducting behavior with a gap opening of 2.4 meV at the Dirac point. Based on the results of invariant ( = 1) and the helical edge states, we demonstrate that tPenta silicene is a topological insulator. Furthermore, the effect of isoelectronic substitutions on tPenta silicene is studied. Two stoichiometric phases, i.e., tPenta Si0.333Ge0.667 and tPenta Si0.333Sn0.667 are found to retain the geometric framework of tPenta silicene and exhibit high stabilities. Our calculations show that both tPenta Si0.333Ge0.667 and tPenta Si0.333Sn0.667 are QSH insulators with enlarged band gaps of 32.5 meV and 94.3 meV, respectively, at the HSE06 level, offering great potential for practical applications at room temperature.
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Affiliation(s)
- Lijin Zhan
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China.
| | - Yimei Fang
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China.
| | - Ruotong Zhang
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China.
| | - Xiancong Lu
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China.
| | - Tie-Yu Lü
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China.
| | - Xinrui Cao
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China. .,Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen, 361005, China
| | - Zizhong Zhu
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China. .,Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen, 361005, China
| | - Shunqing Wu
- Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen 361005, China.
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14
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Quantum Diffusion in the Lowest Landau Level of Disordered Graphene. NANOMATERIALS 2022; 12:nano12101675. [PMID: 35630897 PMCID: PMC9145546 DOI: 10.3390/nano12101675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2022] [Revised: 03/30/2022] [Accepted: 05/11/2022] [Indexed: 11/17/2022]
Abstract
Electronic transport in the lowest Landau level of disordered graphene sheets placed in a homogeneous perpendicular magnetic field is a long-standing and cumbersome problem which defies a conclusive solution for several years. Because the modeled system lacks an intrinsic small parameter, the theoretical picture is infested with singularities and anomalies. We propose an analytical approach to the conductivity based on the analysis of the diffusive processes, and we calculate the density of states, the diffusion coefficient and the static conductivity. The obtained results are not only interesting from the purely theoretical point of view but have a practical significance as well, especially for the development of the novel high-precision calibration devices.
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15
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Caglayan R, Guler HE, Mogulkoc Y. An analysis of Schottky barrier in silicene/Ga 2SeS heterostructures by employing electric field and strain. Phys Chem Chem Phys 2022; 24:10210-10221. [PMID: 35420606 DOI: 10.1039/d2cp00228k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials show promise for many applications, they have certain limitations. In the last decade, the increasing demand for the applications of novel two-dimensional materials has accelerated heterostructure studies in this field. Hence, restoring the combination of two-dimensional heterostructured materials has been reported. In this paper, we show that the effect of the external electric field and biaxial strain on the silicene/Ga2SeS heterostructure has a critical impact on the tuning of the Schottky barrier height. The findings such as the variation of the electronic band gap, interlayer charge transfer, total dipole moment, and n-type/p-type Schottky barrier transitions of the silicene/Ga2SeS heterostructure under external effects imply that the device performance can be adjusted with Janus 2D materials.
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Affiliation(s)
- R Caglayan
- Department of Physics, Faculty of Science, Ankara University, 06100, Ankara, Turkey
| | - H E Guler
- Department of Physics, Faculty of Science, Ankara University, 06100, Ankara, Turkey
| | - Y Mogulkoc
- Department of Physics Engineering, Faculty of Engineering, Ankara University, 06100, Ankara, Turkey.
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16
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Reza Rezapour M, Biel B. DNA/RNA sequencing using germanene nanoribbons via two dimensional molecular electronic spectroscopy: an ab initio study. NANOSCALE 2022; 14:5147-5153. [PMID: 35302137 DOI: 10.1039/d1nr07336b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Developing fast, reliable, and cost effective, yet practical DNA/RNA sequencing methods and devices is a must. In this regard, motivated by the recently introduced two-dimensional electronic molecular spectroscopy (2DMES) technique for molecular recognition, and the compatibility of 2D layers of group IV elements with the current technology of manufacturing electronic devices, we investigate the capability of germanene nanoribbons (GeNRs) as a feasible, accurate, and ultra-fast sequencing device under the application of 2DMES. We show that by employing 2DMES, not only can GeNRs unambiguously distinguish different nucleobases to sequence DNA/RNA, they are also capable of recognizing methylated nucleobases that could be related to cancerous cell growth. Our calculations indicate that, compared to frequently used graphene layers, germanene provides more distinct adsorption energies for different nucleobases which implies its better ability to recognize various molecules unambiguously. By calculating the conductance sensitivity of the system for experimental purposes, we also show that the introduced sequencing device possesses a high sensitivity and selectivity characteristic. Thus, our proposed system would be a promising device for next-generation DNA sequencing technologies and would be realizable using the current protocols of fabricating electronic devices.
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Affiliation(s)
- M Reza Rezapour
- Department of Atomic, Molecular and Nuclear Physics, Faculty of Science, Campus de Fuente Nueva, University of Granada, 18071 Granada, Spain.
| | - Blanca Biel
- Department of Atomic, Molecular and Nuclear Physics, Faculty of Science, Campus de Fuente Nueva, University of Granada, 18071 Granada, Spain.
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17
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Temperature-Dependent Growth and Evolution of Silicene on Au Ultrathin Films-LEEM and LEED Studies. MATERIALS 2022; 15:ma15041610. [PMID: 35208150 PMCID: PMC8878372 DOI: 10.3390/ma15041610] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 02/14/2022] [Accepted: 02/16/2022] [Indexed: 11/17/2022]
Abstract
The formation and evolution of silicene on ultrathin Au films have been investigated with low energy electron microscopy and diffraction. Careful control of the annealing rate and temperature of Au films epitaxially grown on the Si(111) surface allows for the preparation of a large scale, of the order of cm2, silicene sheets. Depending on the final temperature, three stages of silicene evolution can be distinguished: (i) the growth of the low buckled phase, (ii) the formation of a layered heterostructure of the low buckled and planar phases of silicene and (iii) the gradual destruction of the silicene. Each stage is characterized by its unique surface morphology and characteristic diffraction patterns. The present study gives an overview of structures formed on the surface of ultrathin Au films and morphology changes between room temperature and the temperature at which the formation of Au droplets on the Si(111) surface occurs.
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18
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Mahendiran D, Murugan P. The role of defects presenting in graphitic SiC sheets and their consequences in the exfoliation of layers - a first principles approach. Phys Chem Chem Phys 2022; 24:4262-4269. [PMID: 35107106 DOI: 10.1039/d1cp04881c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recently, there has been a growing interest in exploring new 2D nanostructures, due to their unique electronic and optical properties. An atomically thin SiC sheet, which has a honeycomb structure similar to BN, as well as being a direct band gap semiconductor, is one such candidate. Despite several theoretical reports predicting the structural and dynamical stability of 2D SiC nanostructures, few experimental reports have been reported so far. In the present work, we demonstrated by employing first principles density functional theory calculations that the role of self defects on the exfoliation of SiC layers can be understood by studying monolayer, bilayer and trilayer 2D SiC systems. From our work, it can be seen that the dangled C atom on the removal of a Si atom in the SiC layer prefers to interact with an adjacent layer, owing to the compensation of the charges, whereas, a dangled Si atom (in the carbon vacancy case) in the SiC layer compensates its additional charge within the layer by forming a Si-Si bond. We concluded that the exfoliation process of SiC is significantly affected by Si vacancies, rather than the presence of carbon vacancies. This work also provides an intuitive idea to synthesise 2D SiC nanostructures as it has interesting structural and electronic properties.
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Affiliation(s)
- D Mahendiran
- Electrochemical Power Sources Division (ECPS), CSIR Central Electrochemical Research Institute, Karaikudi, 630003, Tamil Nadu, India.,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, Ghaziabad District, Uttar Pradesh, India.
| | - P Murugan
- Electrochemical Power Sources Division (ECPS), CSIR Central Electrochemical Research Institute, Karaikudi, 630003, Tamil Nadu, India.,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, Ghaziabad District, Uttar Pradesh, India.
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19
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Liu C, Zhao C, Zhong S, Chen C, Zhang Z, Jia Y, Wang J. Equally Spaced Quantum States in van der Waals Epitaxy-Grown Nanoislands. NANO LETTERS 2021; 21:9285-9292. [PMID: 34677982 DOI: 10.1021/acs.nanolett.1c03423] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Pursuing the confinement of linearly dispersive relativistic Fermions is of interest in both fundamental physics and potential applications. Here, we report strong STM evidence for the equally spaced, strikingly sharp, and densely distributed quantum well states (QWSs) near Fermi energy in Pb(111) nanoislands, van der Waals epitaxially grown on graphitized 6H-SiC(0001). The observations can be explained as the quantized energies of confined linearly dispersive [111] electrons, which essentially "simulate" the out-of-plane relativistic quasiparticles. The equally spaced QWSs with an origin of confined relativistic electrons are supported by phenomenological simulations and Fabry-Pérot fittings based on the relativistic Fermions. First-principles calculations further reveal that the spin-orbit coupling strengthens the relativistic nature of electrons near Fermi energy. Our finding uncovers the unique equally spaced quantum states in electronic systems beyond Landau levels and may inspire future studies on confined relativistic quasiparticles in flourishing topological materials and applications in structurally simpler quantum cascade laser.
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Affiliation(s)
- Chaofei Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Chunxiang Zhao
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Shan Zhong
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Cheng Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yu Jia
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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20
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Ding B, Li X, Zhou W, Zhang G, Gao H. Anomalous strain effect on the thermal conductivity of low-buckled two-dimensional silicene. Natl Sci Rev 2021; 8:nwaa220. [PMID: 34691724 PMCID: PMC8433080 DOI: 10.1093/nsr/nwaa220] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2020] [Revised: 07/19/2020] [Accepted: 08/03/2020] [Indexed: 11/13/2022] Open
Abstract
The thermal conductivity of two-dimensional materials, such as graphene, typically decreases when tensile strain is applied, which softens their phonon modes. Here, we report an anomalous strain effect on the thermal conductivity of monolayer silicene, a representative low-buckled two-dimensional (LB-2D) material. ReaxFF-based molecular dynamics simulations are performed to show that biaxially stretched monolayer silicene exhibits a remarkable increase in thermal conductivity, by as much as 10 times the freestanding value, with increasing applied strain in the range of [0, 0.1], which is attributed to increased contributions from long-wavelength phonons. A further increase in strain in the range of [0.11, 0.18] results in a plateau of the thermal conductivity in an oscillatory manner, governed by a unique dynamic bonding behavior under extreme loading. This anomalous effect reveals new physical insights into the thermal properties of LB-2D materials and may provide some guidelines for designing heat management and energy conversion devices based on such materials.
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Affiliation(s)
- Bin Ding
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore
| | - Xiaoyan Li
- Centre for Advanced Mechanics and Materials, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Wuxing Zhou
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Gang Zhang
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore
| | - Huajian Gao
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore
- School of Mechanical and Aerospace Engineering, College of Engineering, Nanyang Technological University, Singapore 637457, Singapore
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21
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Ou M, Wang X, Yu L, Liu C, Tao W, Ji X, Mei L. The Emergence and Evolution of Borophene. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2001801. [PMID: 34194924 PMCID: PMC8224432 DOI: 10.1002/advs.202001801] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Revised: 09/19/2020] [Indexed: 05/14/2023]
Abstract
Neighboring carbon and sandwiched between non-metals and metals in the periodic table of the elements, boron is one of the most chemically and physically versatile elements, and can be manipulated to form dimensionally low planar structures (borophene) with intriguing properties. Herein, the theoretical research and experimental developments in the synthesis of borophene, as well as its excellent properties and application in many fields, are reviewed. The decade-long effort toward understanding the size-dependent structures of boron clusters and the theory-directed synthesis of borophene, including bottom-up approaches based on different foundations, as well as up-down approaches with different exfoliation modes, and the key factors influencing the synthetic effects, are comprehensively summarized. Owing to its excellent chemical, electronic, mechanical, and thermal properties, borophene has shown great promise in supercapacitor, battery, hydrogen-storage, and biomedical applications. Furthermore, borophene nanoplatforms used in various biomedical applications, such as bioimaging, drug delivery, and photonic therapy, are highlighted. Finally, research progress, challenges, and perspectives for the future development of borophene in large-scale production and other prospective applications are discussed.
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Affiliation(s)
- Meitong Ou
- School of Pharmaceutical Sciences (Shenzhen)Sun Yat‐sen UniversityGuangzhou510275P. R. China
| | - Xuan Wang
- School of Pharmaceutical Sciences (Shenzhen)Sun Yat‐sen UniversityGuangzhou510275P. R. China
| | - Liu Yu
- School of Pharmaceutical Sciences (Shenzhen)Sun Yat‐sen UniversityGuangzhou510275P. R. China
| | - Chuang Liu
- Center for Nanomedicine and Department of AnesthesiologyBrigham and Women's HospitalHarvard Medical SchoolBostonMA02115USA
| | - Wei Tao
- Center for Nanomedicine and Department of AnesthesiologyBrigham and Women's HospitalHarvard Medical SchoolBostonMA02115USA
| | - Xiaoyuan Ji
- School of Pharmaceutical Sciences (Shenzhen)Sun Yat‐sen UniversityGuangzhou510275P. R. China
- Academy of Medical Engineering and Translational MedicineTianjin UniversityTianjin300072China
| | - Lin Mei
- School of Pharmaceutical Sciences (Shenzhen)Sun Yat‐sen UniversityGuangzhou510275P. R. China
- Institute of Biomedical EngineeringChinese Academy of Medical Sciences and Peking Union Medical CollegeTianjin300192China
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22
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Nazzari D, Genser J, Ritter V, Bethge O, Bertagnolli E, Ramer G, Lendl B, Watanabe K, Taniguchi T, Rurali R, Kolíbal M, Lugstein A. Highly Biaxially Strained Silicene on Au(111). THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:9973-9980. [PMID: 34055129 PMCID: PMC8154839 DOI: 10.1021/acs.jpcc.0c11033] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 04/22/2021] [Indexed: 05/20/2023]
Abstract
Many of graphene's remarkable properties arise from its linear dispersion of the electronic states, forming a Dirac cone at the K points of the Brillouin zone. Silicene, the 2D allotrope of silicon, is also predicted to show a similar electronic band structure, with the addition of a tunable bandgap, induced by spin-orbit coupling. Because of these outstanding electronic properties, silicene is considered as a promising building block for next-generation electronic devices. Recently, it has been shown that silicene grown on Au(111) still possesses a Dirac cone, despite the interaction with the substrate. Here, to fully characterize the structure of this 2D material, we investigate the vibrational spectrum of a monolayer silicene grown on Au(111) by polarized Raman spectroscopy. To enable a detailed ex situ investigation, we passivated the silicene on Au(111) by encapsulating it under few layers hBN or graphene flakes. The observed spectrum is characterized by vibrational modes that are strongly red-shifted with respect to the ones expected for freestanding silicene. By comparing low-energy electron diffraction (LEED) patterns and Raman results with first-principles calculations, we show that the vibrational modes indicate a highly (>7%) biaxially strained silicene phase.
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Affiliation(s)
- Daniele Nazzari
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Jakob Genser
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Viktoria Ritter
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Ole Bethge
- Infineon
Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria
| | - Emmerich Bertagnolli
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Georg Ramer
- Institute
of Chemical Technologies and Analytics, Technische Universität Wien, Getreidemarkt 9, 1060 Vienna, Austria
| | - Bernhard Lendl
- Institute
of Chemical Technologies and Analytics, Technische Universität Wien, Getreidemarkt 9, 1060 Vienna, Austria
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Riccardo Rurali
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Miroslav Kolíbal
- Institute
of Physical Engineering, Brno University
of Technology, Technická 2, 616 69 Brno, Czech Republic
- CEITEC
BUT, Brno University of Technology, Purkyňova 123, 612 00 Brno, Czech
Republic
| | - Alois Lugstein
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
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23
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Yu T, Zhang H, Li D, Lu Y. Electronic and optical properties of silicene on GaAs(111) with hydrogen intercalation: a first-principles study. RSC Adv 2021; 11:16040-16050. [PMID: 35481181 PMCID: PMC9030609 DOI: 10.1039/d1ra01959g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Accepted: 04/26/2021] [Indexed: 11/21/2022] Open
Abstract
In this paper, we investigated the electronic and optical properties of silicene on GaAs(111) substrates (silicene/HGaAs) on the basis of first-principles density functional theory. The hydrogen intercalation introduced substantially weakened the interaction between silicene and the GaAs(111) substrate and induced considerable bandgaps in silicene/HGaAs heterostructures. The effects of the interlayer spacing (L) between silicene and the substrate, silicene buckling height (h), biaxial strain (ε), and external electric field (F) on the electronic properties were also considered. Our results showed that the electronic properties of silicene/HGaAs heterostructures could be controlled by adjusting L and h and applying ε and an external F. Silicene/HGaAs heterostructures possessed the typical optical absorption properties of freestanding silicene and had high absorption coefficients. Besides, some strong peaks of absorption spectra and energy loss spectra existed in the ultraviolet light region, which showed that silicene/HGaAs heterostructures had evident enhancement in the ultraviolet light region. Results laid a theoretical foundation for the study of the electronic and optical properties and applications of silicene on semiconductor substrate devices.
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Affiliation(s)
- Ting Yu
- Department of Physics, School of Science, Beijing Jiaotong University Beijing 100044 People's Republic of China
| | - He Zhang
- Department of Physics, School of Science, Beijing Jiaotong University Beijing 100044 People's Republic of China
| | - Dan Li
- Department of Physics, School of Science, Beijing Jiaotong University Beijing 100044 People's Republic of China
| | - Yanwu Lu
- Department of Physics, School of Science, Beijing Jiaotong University Beijing 100044 People's Republic of China
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24
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Zhao M, Zhuang J, Cheng Q, Hao W, Du Y. Moiré-Potential-Induced Band Structure Engineering in Graphene and Silicene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e1903769. [PMID: 31531941 DOI: 10.1002/smll.201903769] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2019] [Revised: 08/29/2019] [Indexed: 05/22/2023]
Abstract
A moiré pattern results from the projection of one periodic pattern to another with relative lattice constant or misalignment and provides great periodic potential to modify the electronic properties of pristine materials. In this Review, recent research on the effect of the moiré superlattice on the electronic structures of graphene and silicene, both of which possess a honeycomb lattice, is focused on. The moiré periodic potential is introduced by the interlayer interaction to realize abundant phenomena, including new generation of Dirac cones, emergence of Van Hove singularities (vHs) at the cross point of two sets of Dirac cones, Mott-like insulating behavior at half-filling state, unconventional superconductivity, and electronic Kagome lattice and flat band with nontrivial edge state. The role of interlayer coupling strength, which is determined by twist angle and buckling degree, in these exotic properties is discussed in terms of both the theoretical prediction and experimental measurement, and finally, the challenges and outlook for this field are discussed.
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Affiliation(s)
- Mengting Zhao
- BUAA-UOW Joint Research Centre and School of Physics, Beihang University, Beijing, 100191, P. R. China
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2500, Australia
| | - Jincheng Zhuang
- BUAA-UOW Joint Research Centre and School of Physics, Beihang University, Beijing, 100191, P. R. China
| | - Qunfeng Cheng
- BUAA-UOW Joint Research Centre and School of Chemistry, Beihang University, Beijing, 100191, P. R. China
| | - Weichang Hao
- BUAA-UOW Joint Research Centre and School of Physics, Beihang University, Beijing, 100191, P. R. China
| | - Yi Du
- BUAA-UOW Joint Research Centre and School of Physics, Beihang University, Beijing, 100191, P. R. China
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2500, Australia
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25
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Gürel HH, Salmankurt B. Quantum Simulation of the Silicene and Germanene for Sensing and Sequencing of DNA/RNA Nucleobases. BIOSENSORS 2021; 11:59. [PMID: 33668284 PMCID: PMC7996300 DOI: 10.3390/bios11030059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Revised: 02/18/2021] [Accepted: 02/19/2021] [Indexed: 06/12/2023]
Abstract
Over the last decade, we have been witnessing the rise of two-dimensional (2D) materials. Several 2D materials with outstanding properties have been theoretically predicted and experimentally synthesized. 2D materials are good candidates for sensing and detecting various biomolecules because of their extraordinary properties, such as a high surface-to-volume ratio. Silicene and germanene are the monolayer honeycomb structures of silicon and germanium, respectively. Quantum simulations have been very effective in understanding the interaction mechanism of 2D materials and biomolecules and may play an important role in the development of effective and reliable biosensors. This article focuses on understanding the interaction of DNA/RNA nucleobases with silicene and germanane monolayers and obtaining the possibility of using silicene and germanane monolayers as a biosensor for DNA/RNA nucleobases' sequencing using the first principle of Density Functional Theory (DFT) calculations with van der Waals (vdW) correction and nonequilibrium Green's function method. Guanine (G), Cytosine (C), Adenine (A), Thymine (T), and Uracil (U) were examined as the analytes. The strength of adsorption between the DNA/RNA nucleobases and silicene and germanane is G > C > A > T > U. Moreover, our recent work on the investigation of Au- and Li-decorated silicene and germanane for detection of DNA/RNA nucleobases is presented. Our results show that it is possible to get remarkable changes in transmittance due to the adsorption of nucleobases, especially for G, A, and C. These results indicate that silicene and germanene are both good candidates for the applications in fast sequencing devices for DNA/RNA nucleobases. Additionally, our present results have the potential to give insight into experimental studies and can be valuable for advancements in biosensing and nanobiotechnology.
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Affiliation(s)
- Hikmet Hakan Gürel
- Information Systems Engineering Department, Technology Faculty, Umuttepe Campus, Kocaeli University, Kocaeli 41001, Turkey;
| | - Bahadır Salmankurt
- Information Systems Engineering Department, Technology Faculty, Umuttepe Campus, Kocaeli University, Kocaeli 41001, Turkey;
- Department of Physics, Art and Science Faculty, Esentepe Campus, Sakarya University, Sakarya 54187, Turkey
- Remote Education Center, Sakarya University of Applied Sciences, Sakarya 54187, Turkey
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26
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Tareen AK, Khan K, Aslam M, Zhang H, Liu X. Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications. NANOSCALE 2021; 13:510-552. [PMID: 33404570 DOI: 10.1039/d0nr07444f] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.
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Affiliation(s)
- Ayesha Khan Tareen
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China. and Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China. and School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan (DGUT), Dongguan, 523808, Guangdong Province, P. R. China and Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Muhammad Aslam
- Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Xinke Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
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27
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Stavrou M, Papadakis I, Stathis A, Kloberg MJ, Mock J, Kratky T, Günther S, Rieger B, Becherer M, Lyuleeva-Husemann A, Couris S. Silicon Nanosheets versus Graphene Nanosheets: A Comparison of Their Nonlinear Optical Response. J Phys Chem Lett 2021; 12:815-821. [PMID: 33416333 DOI: 10.1021/acs.jpclett.0c03650] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Silicene, the silicon analogue of graphene, represents a new class of two-dimensional (2D) materials, which shares some of the outstanding physical properties of graphene. Furthermore, it has the advantage of being compatible with the current Si-based technology. However, this 2D material is not stable and is quite prone to oxidation. The hydride-terminated silicene, called silicane, is a more stable form of 2D silicon, if functionalized via, for example, the hydrosilylation reaction. In this work, the third-order nonlinear optical (NLO) properties of two functionalized silicanes, namely hydride-terminated silicon nanosheets (SiNS-H) and 1-dodecene-functionalized silicon nanosheets (SiNS-dodecene), are accessed and compared to those of single-layer graphene, under 35 ps, 532 and 1064 nm excitation. The present results show that the functionalized silicanes exhibit comparable and even higher NLO response than that of single-layer graphene, making them strong competitors of graphene and very interesting candidates for future photonic and optoelectronic applications.
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Affiliation(s)
- Michalis Stavrou
- Department of Physics, University of Patras, 26504 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1414, Patras 26504, Greece
| | - Ioannis Papadakis
- Department of Physics, University of Patras, 26504 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1414, Patras 26504, Greece
| | - Aristeidis Stathis
- Department of Physics, University of Patras, 26504 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1414, Patras 26504, Greece
| | - Marc J Kloberg
- WACKER-Chair for Macromolecular Chemistry, Department of Chemistry and Catalysis Research Center, Technical University Munich, Lichtenbergstraße 4, 85758 Garching, Germany
| | - Josef Mock
- Chair of Nano- and Quantum Sensors, Department of Electrical and Computer Engineering, Technical University of Munich, Theresienstraße 90, 80333 Munich, Germany
| | - Tim Kratky
- Associate Professorship of Physical Chemistry with Focus on Catalysis, Department of Chemistry and Catalysis Research Center, Technical University of Munich, Lichtenbergstraße 4, 85758 Garching, Germany
| | - Sebastian Günther
- Associate Professorship of Physical Chemistry with Focus on Catalysis, Department of Chemistry and Catalysis Research Center, Technical University of Munich, Lichtenbergstraße 4, 85758 Garching, Germany
| | - Bernhard Rieger
- WACKER-Chair for Macromolecular Chemistry, Department of Chemistry and Catalysis Research Center, Technical University Munich, Lichtenbergstraße 4, 85758 Garching, Germany
| | - Markus Becherer
- Chair of Nano- and Quantum Sensors, Department of Electrical and Computer Engineering, Technical University of Munich, Theresienstraße 90, 80333 Munich, Germany
| | - Alina Lyuleeva-Husemann
- Chair of Nano- and Quantum Sensors, Department of Electrical and Computer Engineering, Technical University of Munich, Theresienstraße 90, 80333 Munich, Germany
| | - Stelios Couris
- Department of Physics, University of Patras, 26504 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1414, Patras 26504, Greece
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Wang Y, Kong L, Chen C, Cheng P, Feng B, Wu K, Chen L. Realization of Regular-Mixed Quasi-1D Borophene Chains with Long-Range Order. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2005128. [PMID: 33118245 DOI: 10.1002/adma.202005128] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2020] [Revised: 09/29/2020] [Indexed: 06/11/2023]
Abstract
The polymorphism of borophene makes it a promising system to realize tunable physical or chemical properties. Various pure borophene phases consisting of quasi-1D boron chains with different widths have been commonly obtained in experimental studies. Here, it is shown that, due to a substrate mediation effect, artificial long-range ordered phases of borophene consisting of different combinations of boron chains seamlessly joined together can be achieved on Ag(100). Scanning tunneling microscopy measurements and theoretical calculations reveal that mixed-chain phases are more stable than the pure phase, and interact only weakly with the substrate. The mixed-chain phases with various proportions of different chains can be well separated based on the crystal direction of the substrate. The successful growth of mixed-chain phases is expected to deepen the impact of substrate tailored synthesis of borophene.
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Affiliation(s)
- Yu Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Longjuan Kong
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- School of Physics, Nankai University, Tianjin, 300071, China
| | - Caiyun Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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29
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Nie Y, Kashtanov S, Dong H, Li Y, Ma Y, Sun X. Stable Silicene Wrapped by Graphene in Air. ACS APPLIED MATERIALS & INTERFACES 2020; 12:40620-40628. [PMID: 32786246 DOI: 10.1021/acsami.0c05610] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Silicene as a novel and unique two-dimensional nanomaterial attracts considerable research interest; however, obtaining free-standing silicene still poses challenges due to its instability in air. In this work, we report the synthesis of protected silicene through chemical vapor deposition (CVD), in which silicene is sandwiched by graphene (G@S@G) covered on a Cu substrate. Graphene plays the role of both a substrate and protector, which can help silicene stabilize in air. These findings were verified by means of advanced microscopic and spectroscopic investigations accompanied by density functional theory (DFT) simulations. A large area of G@S@G can be obtained and tailored in any type of shape based on the Cu film. G@S@G shows n-type semiconductor character confirmed by a field-effect transistor (FET) device.
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Affiliation(s)
- Yuting Nie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou 215123, Jiangsu, P. R. China
| | - Stepan Kashtanov
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou 215123, Jiangsu, P. R. China
| | - Huilong Dong
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou 215123, Jiangsu, P. R. China
| | - Youyong Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou 215123, Jiangsu, P. R. China
| | - Yanyun Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou 215123, Jiangsu, P. R. China
| | - Xuhui Sun
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou 215123, Jiangsu, P. R. China
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30
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Ukhtary MS, Saito R. Step-like conductance of a silicene pseudospin junction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:425301. [PMID: 32544896 DOI: 10.1088/1361-648x/ab9d50] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Accepted: 06/16/2020] [Indexed: 06/11/2023]
Abstract
A step-like conductance as a function of the Fermi energy is theoretically predicted for a junction made of silicene, in which the energy gap in the junction can be controlled by a perpendicular electric field. When the electric field is applied at the central area of the junction, the transmission probability of an electron becomes partially suppressed and the calculated conductance behaves a step-like function of the Fermi energy. Origins of the step-like conductance are (1) formation of a standing-wave of electron, (2) changing number of transport channels and (3) a rotation of out-of-plane pseudospin of the electron in silicene. We analytically show that the transmission probability of the electron through the junction depends on the direction of the pseudospin, in which the large rotation results in a vanishing conductance. When we switch-off the electric field, on the other hand, the pseudospin does not change the direction, which gives a finite conductance. Thus a switching device can be realized in the silicene pseudospin junction.
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Affiliation(s)
| | - Riichiro Saito
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
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31
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Zhu GL, Ye XJ, Liu CS, Yan XH. Theoretical prediction of silicether: a two-dimensional hyperconjugated disilicon monoxide nanosheet. NANOSCALE ADVANCES 2020; 2:2835-2841. [PMID: 36132376 PMCID: PMC9417710 DOI: 10.1039/d0na00110d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Accepted: 05/14/2020] [Indexed: 06/15/2023]
Abstract
The gapless feature and air instability greatly hinder the applications of silicene in nanoelectronics. We theoretically design an oxidized derivative of silicene (named silicether) assembled by disilyl ether molecules. Silicether has an indirect band gap of 1.89 eV with a photoresponse in the ultraviolet-visible region. In addition to excellent thermodynamic stability, it is inert towards oxygen molecules. The material shows the hyperconjugation effect, leading to high performances of in-plane stiffness (107.8 N m-1) and electron mobility (6.4 × 103 cm2 V-1 s-1). Moreover, the uniaxial tensile strain can trigger an indirect-direct-indirect band gap transition. We identify Ag(100) as a potential substrate for the adsorption and dehydrogenation of disilyl ether. The moderate reaction barriers of dehydrogenation may provide a good possibility of bottom-up growth of silicether. All these outstanding properties make silicether a promising candidate for silicon-based nanoelectronic devices.
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Affiliation(s)
- Gui-Lin Zhu
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications Nanjing 210023 China
| | - Xiao-Juan Ye
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications Nanjing 210023 China
| | - Chun-Sheng Liu
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications Nanjing 210023 China
| | - Xiao-Hong Yan
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications Nanjing 210023 China
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32
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Tran NTT, Gumbs G, Nguyen DK, Lin MF. Fundamental Properties of Metal-Adsorbed Silicene: A DFT Study. ACS OMEGA 2020; 5:13760-13769. [PMID: 32566841 PMCID: PMC7301544 DOI: 10.1021/acsomega.0c00905] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2020] [Accepted: 05/25/2020] [Indexed: 06/11/2023]
Abstract
Sodium, magnesium, and aluminum adatoms, which possess one, two, and three valence electrons, respectively, in terms of 3s, 3s2, and (3s2, 3p) orbitals, are very suitable for helping us understand adsorption-induced diverse phenomena. In this work, the revealing properties of metal (Na/Mg/Al)-adsorbed graphene systems are investigated by means of the first-principles method. The single- and double-sided chemisorption cases, the various adatom concentrations, the hollow/top/valley/bridge sites, and the buckled structures are taken into account. The hollow and valley adsorptions that correspond to the Na/Mg and Al cases, respectively, create extremely nonuniform environments. This leads to diverse orbital hybridizations in Na/Mg/Al-Si bonds, as indicated by the Na/Mg/Al-dominated bands, as well as the spatial charge density distributions and the orbital-projected density of states (DOS). Out of three types of metal-adatom adsorptions, the Al-adsorption configurations produce the strongest chemical modifications. The ferromagnetic configurations have been shown to survive only in specific Mg and Al adsorptions, but not in the Na cases. The presented theoretical predictions could be verified experimentally, and potential applications are discussed. Additionally, important similarities and differences with graphene-related systems are examined.
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Affiliation(s)
- Ngoc Thanh Thuy Tran
- Hierarchical
Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Godfrey Gumbs
- Department
of Physics and Astronomy, Hunter College
of the City University of New York, New York, New York 10065, United States
| | - Duy Khanh Nguyen
- Laboratory
of Applied Physics, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City 700000, Vietnam
- Division
of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
| | - Ming-Fa Lin
- Hierarchical
Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University, Tainan 701, Taiwan
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Quantum Topological
Center, National Cheng Kung University, Tainan 701, Taiwan
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33
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Lin CL, Kawakami N, Arafune R, Minamitani E, Takagi N. Scanning tunneling spectroscopy studies of topological materials. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:243001. [PMID: 32069440 DOI: 10.1088/1361-648x/ab777d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe2 and MoTe2) to two dimensional topological insulators (layered bismuth and silicene). The electronic characteristics of these layered topological materials are experimentally identified.
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Affiliation(s)
- Chun-Liang Lin
- Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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34
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López A, Molina RA. Photoprotected spin Hall effect on graphene with substrate induced Rashba spin-orbit coupling. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:205701. [PMID: 31945749 DOI: 10.1088/1361-648x/ab6cc0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
We propose an experimental realization of the spin Hall effect in graphene by illuminating a graphene sheet on top of a substrate with circularly polarized monochromatic light. The substrate induces a controllable Rashba type spin-orbit coupling which breaks the spin-degeneracy of the Dirac cones but it is gapless. The circularly polarized light induces a gap in the spectrum and turns graphene into a Floquet topological insulator with spin dependent edge states. By analyzing the high and intermediate frequency regimes, we find that in both parameter limits, the spin-Chern number can be tuned by the effective coupling strength of the charge particles to the radiation field and determine the condition for the photoinduced topological phase transition.
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Affiliation(s)
- Alexander López
- Escuela Superior Politécnica del Litoral, ESPOL, Departamento de Física, Campus Gustavo Galindo Km 30.5 Vía Perimetral, PO Box, 09-01-5863, Guayaquil, Ecuador
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35
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Ding LP, Yang LT, Shao P, Tiandong YH, Zhang FH, Lu C. Structures, Mobilities, and Electronic Properties of Functionalized Silicene: Superhalogen BO 2 Adsorption. Inorg Chem 2020; 59:5041-5049. [PMID: 32191446 DOI: 10.1021/acs.inorgchem.0c00268] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
The narrow band gap of silicene severely hinders its application in nanoelectronic devices. Therefore, it is significant to open the band gap of silicene and maintain its high carrier mobility. And for that, the adsorption of different coverage superhalogens BO2 on the silicene surface have been investigated based on density functional theory and the CALYPSO method. The results show that BO2 unit prefers to adsorb on silicene with adjacent mode irrespective of the size of substrate. The electronic structure analysis indicates that the density of states near the Fermi level are mainly contributed by Si-p and BO2-p orbitals. (BO2)n-silicene exhibits metallic character with the exception of (BO2)2 adsorbed on 4 × 4 supercell. As for (BO2)2-silicene, silicene transforms from a gapless direct semiconductor to an indirect semiconductor. Furthermore, the effective electron mass of two BO2 superhalogens on 4 × 4 silicene is estimated and found to be smaller than that of graphene. It is expected to result in higher electron mobility.
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Affiliation(s)
- Li-Ping Ding
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, China
| | - Lin Tai Yang
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, China
| | - Peng Shao
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, China
| | - Yun Hao Tiandong
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, China
| | - Fang-Hui Zhang
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, China
| | - Cheng Lu
- School of Mathematics and Physics, China University of Geosciences (Wuhan), Wuhan 430074, China.,Department of Physics and High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States.,Department of Physics, Nanyang Normal University, Nanyang 473061, People's Republic of China
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36
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Lin J, Yu T, Han F, Yang G. Computational predictions of two‐dimensional anode materials of metal‐ion batteries. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2020. [DOI: 10.1002/wcms.1473] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Jianyan Lin
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
| | - Tong Yu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
| | - Fanjunjie Han
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
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37
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Poncé S, Li W, Reichardt S, Giustino F. First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2020; 83:036501. [PMID: 31923906 DOI: 10.1088/1361-6633/ab6a43] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Over the last decades, our understanding of carrier mobilities has largely been shaped by experimental investigations and empirical models. Recently, advances in electronic structure methods for real materials have made it possible to study these properties with predictive accuracy and without resorting to empirical parameters. These new developments are unlocking exciting new opportunities, from exploring carrier transport in quantum matter to in silico designing new semiconductors with tailored transport properties. In this article, we review the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors. Our aim is threefold: to make this rapidly-growing research area accessible to a broad community of condensed-matter theorists and materials scientists; to identify key challenges that need to be addressed in order to increase the predictive power of these methods; and to identify new opportunities for increasing the impact of these computational methods on the science and technology of advanced materials. The review is organized in three parts. In the first part, we offer a brief historical overview of approaches to the calculation of carrier mobilities, and we establish the conceptual framework underlying modern ab initio approaches. We summarize the Boltzmann theory of carrier transport and we discuss its scope of applicability, merits, and limitations in the broader context of many-body Green's function approaches. We discuss recent implementations of the Boltzmann formalism within the context of density functional theory and many-body perturbation theory calculations, placing an emphasis on the key computational challenges and suggested solutions. In the second part of the article, we review applications of these methods to materials of current interest, from three-dimensional semiconductors to layered and two-dimensional materials. In particular, we discuss in detail recent investigations of classic materials such as silicon, diamond, gallium arsenide, gallium nitride, gallium oxide, and lead halide perovskites as well as low-dimensional semiconductors such as graphene, silicene, phosphorene, molybdenum disulfide, and indium selenide. We also review recent efforts toward high-throughput calculations of carrier transport. In the last part, we identify important classes of materials for which an ab initio study of carrier mobilities is warranted. We discuss the extension of the methodology to study topological quantum matter and materials for spintronics and we comment on the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.
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Affiliation(s)
- Samuel Poncé
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom. Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Quantitative determination of atomic buckling of silicene by atomic force microscopy. Proc Natl Acad Sci U S A 2019; 117:228-237. [PMID: 31871150 DOI: 10.1073/pnas.1913489117] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
The atomic buckling in 2D "Xenes" (such as silicene) fosters a plethora of exotic electronic properties such as a quantum spin Hall effect and could be engineered by external strain. Quantifying the buckling magnitude with subangstrom precision is, however, challenging, since epitaxially grown 2D layers exhibit complex restructurings coexisting on the surface. Here, we characterize using low-temperature (5 K) atomic force microscopy (AFM) with CO-terminated tips assisted by density functional theory (DFT) the structure and local symmetry of each prototypical silicene phase on Ag(111) as well as extended defects. Using force spectroscopy, we directly quantify the atomic buckling of these phases within 0.1-Å precision, obtaining corrugations in the 0.8- to 1.1-Å range. The derived band structures further confirm the absence of Dirac cones in any of the silicene phases due to the strong Ag-Si hybridization. Our method paves the way for future atomic-scale analysis of the interplay between structural and electronic properties in other emerging 2D Xenes.
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Concentration-Diversified Magnetic and Electronic Properties of Halogen-Adsorbed Silicene. Sci Rep 2019; 9:13746. [PMID: 31551450 PMCID: PMC6760225 DOI: 10.1038/s41598-019-50233-w] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2019] [Accepted: 08/23/2019] [Indexed: 11/23/2022] Open
Abstract
Diverse magnetic and electronic properties of halogen-adsorbed silicene are investigated by the first-principle theoretical framework, including the adatom-diversified geometric structures, atom-dominated energy bands, spatial spin density distributions, spatial charge density distributions and its variations, and orbital-projected density of states. Also, such physical quantities are sufficient to identify similar and different features in the double-side and single-side adsorptions. The former belongs to the concentration-depended finite gap semiconductors or p-type metals, while the latter display the valence energy bands with/without spin-splitting intersecting with the Fermi level. Both adsorption types show the halogen-related weakly dispersed bands at deep energies, the adatom-modified middle-energy σ bands, and the recovery of low-energy π bands during the decrease of the halogen concentrations. Such feature-rich band structures can be verified by the angle-resolved photoemission spectroscopy experiment.
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40
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Kambe T, Hosono R, Imaoka S, Kuzume A, Yamamoto K. Solution Phase Mass Synthesis of 2D Atomic Layer with Hexagonal Boron Network. J Am Chem Soc 2019; 141:12984-12988. [DOI: 10.1021/jacs.9b06110] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Tetsuya Kambe
- Laboratory for
Chemistry and Life Science, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- JST-ERATO, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Reina Hosono
- Laboratory for
Chemistry and Life Science, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Shotaro Imaoka
- Laboratory for
Chemistry and Life Science, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Akiyoshi Kuzume
- JST-ERATO, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Kimihisa Yamamoto
- Laboratory for
Chemistry and Life Science, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- JST-ERATO, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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41
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De Padova P, Generosi A, Paci B, Ottaviani C, Quaresima C, Olivieri B, Kopciuszyński M, Żurawek L, Zdyb R, Krawiec M. New Findings on Multilayer Silicene on Si(111)√3×√3R30°-Ag Template. MATERIALS 2019; 12:ma12142258. [PMID: 31337057 PMCID: PMC6678445 DOI: 10.3390/ma12142258] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/15/2019] [Revised: 07/08/2019] [Accepted: 07/11/2019] [Indexed: 11/16/2022]
Abstract
We report new findings on multilayer silicene grown on Si(111)√3 × √3 R30°-Ag template, after the recent first compelling experimental evidence of its synthesis. Low-energy electron diffraction, reflection high-energy electron diffraction, and energy-dispersive grazing incidence X-ray diffraction measurements were performed to show up the fingerprints of √3 × √3 multilayer silicene. Angle-resolved photoemission spectroscopy displayed new features in the second surface Brillouin zone, attributed to the multilayer silicene on Si(111)√3 × √3 R30°-Ag. Band-structure dispersion theoretical calculations performed on a model of three honeycomb stacked layers, silicene grown on Si(111)√3 × √3 R30°-Ag surface confirm the experimental results.
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Affiliation(s)
- Paola De Padova
- Consiglio Nazionale delle Ricerche-ISM, Via Fosso del Cavaliere 100, 00133 Roma, Italy.
- INFN-Laboratori Nazionali di Frascati Via Enrico Fermi 40, Frascati, 00044 Roma, Italy.
| | - Amanda Generosi
- Consiglio Nazionale delle Ricerche-ISM, Via Fosso del Cavaliere 100, 00133 Roma, Italy
| | - Barbara Paci
- Consiglio Nazionale delle Ricerche-ISM, Via Fosso del Cavaliere 100, 00133 Roma, Italy
| | - Carlo Ottaviani
- Consiglio Nazionale delle Ricerche-ISM, Via Fosso del Cavaliere 100, 00133 Roma, Italy
| | - Claudio Quaresima
- Consiglio Nazionale delle Ricerche-ISM, Via Fosso del Cavaliere 100, 00133 Roma, Italy
| | - Bruno Olivieri
- Consiglio Nazionale delle Ricerche-ISAC, Via Fosso del Cavaliere 100, 00133 Roma, Italy
| | - Marek Kopciuszyński
- Institute of Physics, Maria Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
| | - Lucyna Żurawek
- Institute of Physics, Maria Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
| | - Ryszard Zdyb
- Institute of Physics, Maria Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
| | - Mariusz Krawiec
- Institute of Physics, Maria Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland.
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42
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Liu YP, Ning BY, Gong LC, Weng TC, Ning XJ. A New Model to Predict Optimum Conditions for Growth of 2D Materials on a Substrate. NANOMATERIALS 2019; 9:nano9070978. [PMID: 31284375 PMCID: PMC6669673 DOI: 10.3390/nano9070978] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/19/2019] [Revised: 06/28/2019] [Accepted: 06/30/2019] [Indexed: 11/16/2022]
Abstract
Deposition of atoms or molecules on a solid surface is a flexible way to prepare various novel two-dimensional materials if the growth conditions, such as suitable surface and optimum temperature, could be predicted theoretically. However, prediction challenges modern theory of material design because the free energy criteria can hardly be applied to this issue due to the long-standing problem in statistical physics of the calculations of the free energy. Herein, we present an approach to the problem by the demonstrations of graphene and γ-graphyne on the surface of copper crystal, as well as silicene on a silver substrate. Compared with previous state-of-the-art algorithms for calculations of the free energy, our approach is capable of achieving computational precisions at least 10-times higher, which was confirmed by molecular dynamics simulations, and working at least four orders of magnitude faster, which enables us to obtain free energy based on ab initio calculations of the interaction potential instead of the empirical one. The approach was applied to predict the optimum conditions for silicene growth on different surfaces of solid silver based on density functional theory, and the results are in good agreement with previous experimental observations.
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Affiliation(s)
- Yu-Peng Liu
- Institute of Modern Physics, Fudan University, Shanghai 200433, China
- Applied Ion Beam Physics Laboratory, Fudan University, Shanghai 200433, China
| | - Bo-Yuan Ning
- Center for High Pressure Science & Technology Advanced Research, Shanghai 202103, China
| | - Le-Cheng Gong
- Institute of Modern Physics, Fudan University, Shanghai 200433, China
- Applied Ion Beam Physics Laboratory, Fudan University, Shanghai 200433, China
| | - Tsu-Chien Weng
- Center for High Pressure Science & Technology Advanced Research, Shanghai 202103, China
| | - Xi-Jing Ning
- Institute of Modern Physics, Fudan University, Shanghai 200433, China.
- Applied Ion Beam Physics Laboratory, Fudan University, Shanghai 200433, China.
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43
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Masihi A, Naseri M, Fatahi N. A first-principles study of the electronic and optical properties of monolayer α-PbO. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.02.022] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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44
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Chen Q, Liang L, Potsi G, Wan P, Lu J, Giousis T, Thomou E, Gournis D, Rudolf P, Ye J. Highly Conductive Metallic State and Strong Spin-Orbit Interaction in Annealed Germanane. NANO LETTERS 2019; 19:1520-1526. [PMID: 30674194 PMCID: PMC6421576 DOI: 10.1021/acs.nanolett.8b04207] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2018] [Revised: 01/05/2019] [Indexed: 05/30/2023]
Abstract
Similar to carbon, germanium exists in various structures such as three-dimensional crystalline germanium and germanene, a two-dimensional germanium atomic layer. Regarding the electronic properties, they are either semiconductors or Dirac semimetals. Here, we report a highly conductive metallic state in thermally annealed germanane (hydrogen-terminated germanene, GeH), which shows a resistivity of ∼10-7 Ω·m that is orders of magnitude lower than any other allotrope of germanium. By comparing the resistivity, Raman spectra, and thickness change measured by AFM, we suggest the highly conductive metallic state is associated with the dehydrogenation during heating, which likely transforms germanane thin flakes to multilayer germanene. In addition, weak antilocalization is observed, serving as solid evidence for strong spin-orbit interaction (SOI) in germanane/germanene. Our study opens a possible new route to investigate the electrical transport properties of germanane/germanene, and the large SOI might provide the essential ingredients to access their topological states predicted theoretically.
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Affiliation(s)
- Qihong Chen
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
| | - Lei Liang
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
| | - Georgia Potsi
- Surfaces
and Thin Films, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
| | - Puhua Wan
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
| | - Jianming Lu
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
- State
Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, No. 5 Yiheyuan Road Haidian District, 100871 Beijing, P. R. China
| | - Theodosis Giousis
- Surfaces
and Thin Films, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
- Department
of Materials Science & Engineering, University of Ioannina, 45110 Ioannina, Greece
| | - Eleni Thomou
- Surfaces
and Thin Films, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
- Department
of Materials Science & Engineering, University of Ioannina, 45110 Ioannina, Greece
| | - Dimitrios Gournis
- Department
of Materials Science & Engineering, University of Ioannina, 45110 Ioannina, Greece
| | - Petra Rudolf
- Surfaces
and Thin Films, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
| | - Jianting Ye
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The Netherlands
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45
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Do TN, Gumbs G, Shih PH, Huang D, Chiu CW, Chen CY, Lin MF. Peculiar optical properties of bilayer silicene under the influence of external electric and magnetic fields. Sci Rep 2019; 9:624. [PMID: 30679482 PMCID: PMC6345814 DOI: 10.1038/s41598-018-36547-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2018] [Accepted: 11/15/2018] [Indexed: 11/19/2022] Open
Abstract
We conduct a comprehensive investigation of the effect of an applied electric field on the optical and magneto-optical absorption spectra for AB-bt (bottom-top) bilayer silicene. The generalized tight-binding model in conjunction with the Kubo formula is efficiently employed in the numerical calculations. The electronic and optical properties are greatly diversified by the buckled lattice structure, stacking configuration, intralayer and interlayer hopping interactions, spin-orbital couplings, as well as the electric and magnetic fields (\documentclass[12pt]{minimal}
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\begin{document}$${B}_{z}\hat{z}$$\end{document}Bzzˆ). An electric field induces spin-split electronic states, a semiconductor-metal phase transitions and the Dirac cone formations in different valleys, leading to the special absorption features. The Ez-dependent low-lying Landau levels possess lower degeneracy, valley-created localization centers, peculiar distributions of quantum numbers, well-behaved and abnormal energy spectra in Bz-dependencies, and the absence of anti-crossing behavior. Consequently, the specific magneto-optical selection rules exist for diverse excitation categories under certain critical electric fields. The optical gaps are reduced as Ez is increased, but enhanced by Bz, in which the threshold channel might dramatically change in the former case. These characteristics are in sharp contrast with those for layered graphene.
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Affiliation(s)
- Thi-Nga Do
- Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan. .,Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan.
| | - Godfrey Gumbs
- Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, 10065, USA.,Donostia International Physics Center (DIPC), P de Manuel Lardizabal, 4, 20018, San Sebastian, Basque Country, Spain
| | - Po-Hsin Shih
- Department of Physics, National Cheng Kung University, Tainan, Taiwan
| | - Danhong Huang
- US Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico, 87117, USA
| | - Chih-Wei Chiu
- Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan.
| | - Chia-Yun Chen
- Department of Materials Science and Engineering, International Curriculum for Advanced Materials Program (iCAMP), National Cheng Kung University, Tainan, Taiwan
| | - Ming-Fa Lin
- Quantum Topology Center, National Cheng Kung University, Tainan, Taiwan.,Hierarchical Green-Energy Materials Research Center, National Cheng Kung University, Tainan, Taiwan
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46
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Li G, Zhang L, Xu W, Pan J, Song S, Zhang Y, Zhou H, Wang Y, Bao L, Zhang YY, Du S, Ouyang M, Pantelides ST, Gao HJ. Stable Silicene in Graphene/Silicene Van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1804650. [PMID: 30368921 DOI: 10.1002/adma.201804650] [Citation(s) in RCA: 32] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2018] [Revised: 09/04/2018] [Indexed: 05/20/2023]
Abstract
Silicene-based van der Waals heterostructures are theoretically predicted to have interesting physical properties, but their experimental fabrication has remained a challenge because of the easy oxidation of silicene in air. Here, the fabrication of graphene/silicene van der Waals heterostructures by silicon intercalation is reported. Density functional theory calculations show weak interactions between graphene and silicene layers, confirming the formation of van der Waals heterostructures. The heterostructures show no observable damage after air exposure for extended periods, indicating good air stability. The I-V characteristics of the vertical graphene/silicene/Ru heterostructures show rectification behavior.
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Affiliation(s)
- Geng Li
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics, University of Maryland, MD, 20742, USA
| | - Lizhi Zhang
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Wenyan Xu
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jinbo Pan
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shiru Song
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yi Zhang
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haitao Zhou
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yeliang Wang
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lihong Bao
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yu-Yang Zhang
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, 37235, USA
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
| | - Min Ouyang
- Department of Physics, University of Maryland, MD, 20742, USA
| | - Sokrates T Pantelides
- Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, 37235, USA
| | - Hong-Jun Gao
- Institute of Physics and University of Chinese Academy of Sciences, and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, 100190, China
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47
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Li Z, Zhuang J, Wang L, Feng H, Gao Q, Xu X, Hao W, Wang X, Zhang C, Wu K, Dou SX, Chen L, Hu Z, Du Y. Realization of flat band with possible nontrivial topology in electronic Kagome lattice. SCIENCE ADVANCES 2018; 4:eaau4511. [PMID: 30456304 PMCID: PMC6239431 DOI: 10.1126/sciadv.aau4511] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2018] [Accepted: 10/16/2018] [Indexed: 05/22/2023]
Abstract
The energy dispersion of fermions or bosons vanishes in momentum space if destructive quantum interference occurs in a frustrated Kagome lattice with only nearest-neighbor hopping. A discrete flat band (FB) without any dispersion is consequently formed, promising the emergence of fractional quantum Hall states at high temperatures. Here, we report the experimental realization of an FB with possible nontrivial topology in an electronic Kagome lattice on twisted multilayer silicene. Because of the unique low-buckled two-dimensional structure of silicene, a robust electronic Kagome lattice has been successfully induced by moiré patterns after twisting the silicene multilayers. The electrons are localized in the Kagome lattice because of quantum destructive interference, and thus, their kinetic energy is quenched, which gives rise to an FB peak in the density of states. A robust and pronounced one-dimensional edge state has been revealed at the Kagome edge, which resides at higher energy than the FB. Our observations of the FB and the exotic edge state in electronic Kagome lattice open up the possibility that fractional Chern insulators could be realized in two-dimensional materials.
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Affiliation(s)
- Zhi Li
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
| | - Jincheng Zhuang
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 10191, P. R. China
| | - Li Wang
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
| | - Haifeng Feng
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 10191, P. R. China
| | - Qian Gao
- School of Physics, Nankai University, Tianjin 300071, P. R. China
| | - Xun Xu
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 10191, P. R. China
| | - Weichang Hao
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 10191, P. R. China
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
| | - Chao Zhang
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
| | - Kehui Wu
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Shi Xue Dou
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 10191, P. R. China
| | - Lan Chen
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Zhenpeng Hu
- School of Physics, Nankai University, Tianjin 300071, P. R. China
| | - Yi Du
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), UOW-Beihang Joint Research Centre, University of Wollongong, Wollongong, NSW 2525, Australia
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 10191, P. R. China
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48
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Mao Y, Xu H, Yuan J, Zhong J. Functionalization of the electronic and magnetic properties of silicene by halogen atoms unilateral adsorption: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:365001. [PMID: 30063031 DOI: 10.1088/1361-648x/aad6f9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Based on first-principles calculations, the structure, electronic and magnetic properties of unilateral halogenated silicene Si2X1 (X = F, Cl, Br, I) are investigated. The formation energies of all the configurations of studied Si2X1 (X = F, Cl, Br, I) are found to be lower than that in pristine silicene, which indicates the strong stability. The band structure of half-fluorinated configuration Si2F1 presents metallic property, while other unilateral halogenated silicene Si2X1 (X = Cl, Br, I) exhibits half-metallic properties. In unilateral halogenated silicene Si2X1 (X = Cl, Br, I), the unpaired electrons in unsaturated silicon atom produce the localized magnetic moment. However, due to the strong electronegativity in F atom, the half-fluorinated silicene Si2F1 is almost non-magnetic. The metallic property of Si2F1 configuration can be tuned to half-metallic by applying biaxial tensile strain from 11.95% to 13.51%. Furthermore, applying biaxial tensile strains can tune the half-metallic property of unilateral halogenated silicene Si2X1 (X = Cl, Br, I) to a semiconductor. This half-metallic property in unilateral halogenated silicene Si2X1 (X = Cl, Br, I) can be recovered and can even be tuned to metallic if continually increasing the biaxial tensile strains.
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Affiliation(s)
- Yuliang Mao
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Hunan 411105, People's Republic of China
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Wu W, Zhang W, Chen S, Ling X, Shu W, Luo H, Wen S, Yin X. Transitional Goos-Hänchen effect due to the topological phase transitions. OPTICS EXPRESS 2018; 26:23705-23713. [PMID: 30184867 DOI: 10.1364/oe.26.023705] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
We examine the Goos-Hänchen (GH) effect for a Gaussian beam impinging on the surface of silicene whose topological phase transitions can be modulated by external electric field and/or irradiating circular polarized light. It is shown that both the spatial and angular shifts in GH effect present a sharp jump due to the topological phase transitions. The transitional GH effect can be attributed to transitional optical conductivity, which relates to Berry curvature and Chern numbers. These results can be extensively extended to other two-dimensional atomic crystals in graphene family. We believe that the transitional GH effect may offer a possible way to determine the Berry curvature, Chern numbers, and topological phase transition by a direct optical measurement.
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Sattar S, Zhang Y, Schwingenschlögl U. Stacking Effects in van der Waals Heterostructures of Silicene and Hexagonal Boron Nitride. ADVANCED THEORY AND SIMULATIONS 2018. [DOI: 10.1002/adts.201800083] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Shahid Sattar
- Physical Science and Engineering Division (PSE); King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia
| | - Yongyou Zhang
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems and School of Physics; Beijing Institute of Technology; Beijing 100081 China
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division (PSE); King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia
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