Ultrafast dynamics of massive dirac fermions in bilayer graphene

Antiscreening and Nonequilibrium Layer Electric Phases in Graphene Multilayers

Screening is a ubiquitous phenomenon through which the polarization of bound or mobile charges tends to reduce the strengths of electric fields inside materials. Here, we show how photoexcitation can be used as a knob to transform conventional out-of-plane screening into antiscreening-the amplification of electric fields-in multilayer graphene. We find that, by varying the photoexcitation intensity, multiple nonequilibrium screening regimes can be accessed, including near-zero screening, antiscreening, and overscreening (reversing electric fields). Strikingly, at modest continuous wave photoexcitation intensities, the nonequilibrium polarization states become multistable, hosting light-induced ferroelectriclike steady states with nonvanishing out-of-plane polarization (and band gaps) even in the absence of an externally applied displacement field in nominally inversion symmetric stacks. This rich phenomenology reveals a novel paradigm of dynamical quantum matter that we expect will enable a variety of nonequilibrium broken symmetry phases.

Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor

Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, lattice temperature, electron doping, and all-optical tuning of third-harmonic generation are combined in a hexagonal boron nitride-encapsulated graphene opto-electronic device and demonstrate up to 85% modulation depth along with gate-tunable ultrafast dynamics. These results arise from the dynamic changes in the transient electronic temperature combined with Pauli blocking induced by the out-of-equilibrium chemical potential. The work provides a detailed description of the transient nonlinear optical and electronic response of graphene, which is crucial for the design of nanoscale and ultrafast optical modulators, detectors, and frequency converters.

Multiphoton-pumped UV-Vis transient absorption spectroscopy of 2D materials: basic concepts and recent applications

2D materials are considered a key element in the development of next-generation electronics (nanoelectronics) due to their extreme thickness in the nanometer range and unique physical properties. The ultrafast dynamics of photoexcited carriers in such materials are strongly influenced by their interfaces, since the thickness of 2D materials is much smaller than the typical depth of light penetration into their bulk counterparts and the mean free path of photoexcited carriers. The resulting collisions of photoexcited carriers with interfacial potential barriers of 2D materials in the presence of a strong laser field significantly alter the overall dynamics of photoexcitation, allowing laser light to be directly absorbed by carriers in the conduction/valence band through the inverse bremsstrahlung mechanism. The corresponding ultrafast carrier dynamics can be monitored using multiphoton-pumped UV-Vis transient absorption spectroscopy. In this review, we discuss the basic concepts and recent applications of this spectroscopy for a variety of 2D materials, including transition-metal dichalcogenide monolayers, topological insulators, and other 2D semiconductor structures.

Ultrafast Umklapp-assisted electron-phonon cooling in magic-angle twisted bilayer graphene

Understanding electron-phonon interactions is fundamentally important and has crucial implications for device applications. However, in twisted bilayer graphene near the magic angle, this understanding is currently lacking. Here, we study electron-phonon coupling using time- and frequency-resolved photovoltage measurements as direct and complementary probes of phonon-mediated hot-electron cooling. We find a remarkable speedup in cooling of twisted bilayer graphene near the magic angle: The cooling time is a few picoseconds from room temperature down to 5 kelvin, whereas in pristine bilayer graphene, cooling to phonons becomes much slower for lower temperatures. Our experimental and theoretical analysis indicates that this ultrafast cooling is a combined effect of superlattice formation with low-energy moiré phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone. This enables efficient electron-phonon Umklapp scattering that overcomes electron-phonon momentum mismatch. These results establish twist angle as an effective way to control energy relaxation and electronic heat flow.

Topological quadratic-node semimetal in a photonic microring lattice

Graphene, with its two linearly dispersing Dirac points with opposite windings, is the minimal topological nodal configuration in the hexagonal Brillouin zone. Topological semimetals with higher-order nodes beyond the Dirac points have recently attracted considerable interest due to their rich chiral physics and their potential for the design of next-generation integrated devices. Here we report the experimental realization of the topological semimetal with quadratic nodes in a photonic microring lattice. Our structure hosts a robust second-order node at the center of the Brillouin zone and two Dirac points at the Brillouin zone boundary-the second minimal configuration, next to graphene, that satisfies the Nielsen-Ninomiya theorem. The symmetry-protected quadratic nodal point, together with the Dirac points, leads to the coexistence of massive and massless components in a hybrid chiral particle. This gives rise to unique transport properties, which we demonstrate by directly imaging simultaneous Klein and anti-Klein tunnelling in the microring lattice.

Time- and angle-resolved photoemission spectroscopy (TR-ARPES) of TMDC monolayers and bilayers

Many unique properties in two-dimensional (2D) materials and their heterostructures rely on charge excitation, scattering, transfer, and relaxation dynamics across different points in the momentum space. Understanding these dynamics is crucial in both the fundamental study of 2D physics and their incorporation in optoelectronic and quantum devices. A direct method to probe charge carrier dynamics with momentum resolution is time- and angle-resolved photoemission spectroscopy (TR-ARPES). Such measurements have been challenging, since photoexcited carriers in many 2D monolayers reside at high crystal momenta, requiring probe photon energies in the extreme UV (EUV) regime. These challenges have been recently addressed by development of table-top pulsed EUV sources based on high harmonic generation, and the successful integration into a TR-ARPES and/or time-resolved momentum microscope. Such experiments will allow direct imaging of photoelectrons with superior time, energy, and crystal momentum resolution, with unique advantage over traditional optical measurements. Recently, TR-ARPES experiments of 2D transition metal dichalcogenide (TMDC) monolayers and bilayers have created unprecedented opportunities to reveal many intrinsic dynamics of 2D materials, such as bandgap renormalization, charge carrier scattering, relaxation, and wavefunction localization in moiré patterns. This perspective aims to give a short review of recent discoveries and discuss the challenges and opportunities of such techniques in the future.

Self-energy dynamics and the mode-specific phonon threshold effect in Kekulé-ordered graphene

Electron-phonon interaction and related self-energy are fundamental to both the equilibrium properties and non-equilibrium relaxation dynamics of solids. Although electron-phonon interaction has been suggested by various time-resolved measurements to be important for the relaxation dynamics of graphene, the lack of energy- and momentum-resolved self-energy dynamics prohibits direct identification of the role of specific phonon modes in the relaxation dynamics. Here, by performing time- and angle-resolved photoemission spectroscopy measurements on Kekulé-ordered graphene with folded Dirac cones at the Γ point, we have succeeded in resolving the self-energy effect induced by the coupling of electrons to two phonons at Ω1 = 177 meV and Ω2 = 54 meV, and revealing its dynamical change in the time domain. Moreover, these strongly coupled phonons define energy thresholds, which separate the hierarchical relaxation dynamics from ultrafast, fast to slow, thereby providing direct experimental evidence for the dominant role of mode-specific phonons in the relaxation dynamics.

Coherent Modulation of Quasiparticle Scattering Rates in a Photoexcited Charge-Density-Wave System

We present a complementary experimental and theoretical investigation of relaxation dynamics in the charge-density-wave (CDW) system TbTe_{3} after ultrafast optical excitation. Using time- and angle-resolved photoemission spectroscopy, we observe an unusual transient modulation of the relaxation rates of excited photocarriers. A detailed analysis of the electron self-energy based on a nonequilibrium Green's function formalism reveals that the phase space of electron-electron scattering is critically modulated by the photoinduced collective CDW excitation, providing an intuitive microscopic understanding of the observed dynamics and revealing the impact of the electronic band structure on the self-energy.

Stronger Interlayer Interactions Contribute to Faster Hot Carrier Cooling of Bilayer Graphene under Pressure

We perform femtosecond pump-probe spectroscopy to in situ investigate the ultrafast photocarrier dynamics in bilayer graphene and observe an acceleration of energy relaxation under pressure. In combination with in situ Raman spectroscopy and ab initio molecular dynamics simulations, we reveal that interlayer shear and breathing modes have significant contributions to the faster hot-carrier relaxations by coupling with the in-plane vibration modes under pressure. Our work suggests that further understanding the effect of interlayer interaction on the behaviors of electrons and phonons would be critical to tailor the photocarrier dynamic properties of bilayer graphene.

Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from NanoARPES

The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue toward engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. Direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines the effect of electrical doping on the electronic band structure of twisted bilayer graphene using a back-gated device architecture for angle-resolved photoemission measurements with a nano-focused light spot. A twist angle of 12.2° is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene.

Ultrafast Unbalanced Electron Distributions in Quasicrystalline 30° Twisted Bilayer Graphene

Ultrafast carrier dynamics in a graphene system are very important in terms of optoelectronic devices. Recently, a twisted bilayer graphene has been discovered that possesses interesting electronic properties owing to strong modifications in interlayer couplings. Thus, a better understanding of ultrafast carrier dynamics in a twisted bilayer graphene is highly desired. Here, we reveal the unbalanced electron distributions in a quasicrystalline 30° twisted bilayer graphene (QCTBG), using time- and angle-resolved photoemission spectroscopy on the femtosecond time scale. We distinguish time-dependent electronic behavior between the upper- and lower-layer Dirac cones and gain insight into the dynamical properties of replica bands, which show characteristic signatures due to Umklapp scatterings. The experimental results are reproduced by solving a set of rate equations among the graphene layers and substrate. We find that the substrate buffer layer plays a key role in initial carrier injections to the upper and lower layers. Our results demonstrate that QCTBG can be a promising element for future devices.

Prolonged photo-carriers generated in a massive-and-anisotropic Dirac material

Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic structure above the Fermi level has been successfully observed, and a massive-and-anisotropic Dirac-type dispersions are confirmed; more importantly, we directly observe that the photo-carriers generated across the direct band gap have the life time exceeding 400 ps. Our finding confirms that black phosphorus is a suitable platform for excitonic condensations, and also open an avenue for future applications in broadband mid-infrared BP-based optoelectronic devices.

Mobility gap and quantum transport in a functionalized graphene bilayer

In a Bernal graphene bilayer, carbon atoms belong to two inequivalent sublattices A and B, with atoms that are coupled to the other layer by [Formula: see text] bonds belonging to sublattice A and the other atoms belonging to sublattice B. We analyze the density of states and the conductivity of Bernal graphene bilayers when atoms of sublattice A or B only are randomly functionalized. We find that for a selective functionalization on sublattice B only, a mobility gap of the order of 0.5 eV is formed close to the Dirac energy at concentration of adatoms [Formula: see text]. In addition, at some other energies conductivity presents anomalous behaviors. We show that these properties are related to the bipartite structure of the graphene layer.

Observation of Nanosecond Hot Carrier Decay in Graphene

An extremely long decay time of hot carriers in graphene at room temperature was observed for the first time by monitoring the photoinduced thermionic emission using a highly sensitive time-of-flight angle-resolved photoemission spectroscopy method. The emission persisted beyond 1 ns, two orders of magnitude longer than previously reported carrier decay. The long lifetime was attributed to the excitation of image potential states at very low laser fluencies.

Ultrafast Spectral Photoresponse of Bilayer Graphene: Optical Pump-Terahertz Probe Spectroscopy

Photoinduced terahertz conductivity Δσ(ω) of Bernal stacked bilayer graphene (BLG) with different dopings is measured by time-resolved optical pump terahertz probe spectroscopy. The real part of photoconductivity Δσ(ω) (Δσ_Re(ω)) is positive throughout the spectral range 0.5-2.5 THz in low-doped BLG. This is in sharp contrast to Δσ(ω) for high-doped bilayer graphene where Δσ_Re(ω) is negative at low frequency and positive on the high frequency side. We use Boltzmann transport theory to understand quantitatively the frequency dependence of Δσ(ω), demanding the energy dependence of different scattering rates such as short-range impurity scattering, Coulomb scattering, carrier-acoustic phonon scattering, and substrate surface optical phonon scattering. We find that the short-range disorder scattering dominates over other processes. The calculated photoconductivity captures very well the experimental conductivity spectra as a function of lattice temperature varying from 300 to 4 K, without any empirical fitting procedures adopted so far in the literature. This helps us to understand the intraband conductivity of photoexcited hot carriers in 2D materials.

Time reflection and refraction of graphene plasmons at a temporal discontinuity

A dynamical change of material properties induces a special type of reflection and refraction at a temporal discontinuity. Here, we study the interaction of graphene plasmons with single and double temporal discontinuities or shocks, leading to controlled in-plane scattering. We analytically determine the Fresnel-like coefficients for graphene plasmons at these boundaries, and validate our results by rigorous numerical simulations. Temporally controlled doping of two-dimensional materials such as graphene thus leads to a new mechanism for planar and compact plasmonic devices.

Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions

Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. In this work, we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films, taking into account both intrinsic and extrinsic spin-orbit interactions. The physics is governed by the complex interplay of the chiral spin texture, quasiparticle mass, and scalar and spin-orbit scattering. We demonstrate that terms linear in the extrinsic spin-orbit scattering are generally present in the Bloch and momentum relaxation times in all topological materials, and the correction to the diffusion constant is linear in the strength of the extrinsic spin-orbit. In topological insulators, which have zero quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to an observable density dependence in the weak antilocalization correction. They produce substantial qualitative modifications to the magnetoconductivity, differing greatly from the conventional Hikami-Larkin-Nagaoka formula traditionally used in experimental fits, which predicts a crossover from weak localization to antilocalization as a function of the extrinsic spin-orbit strength. In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In Weyl semimetal thin films having intermediate to large values of the quasiparticle mass, we show that extrinsic spin-orbit scattering strongly affects the boundary of the weak localization to antilocalization transition. We produce a complete phase diagram for this transition as a function of the mass and spin-orbit scattering strength. Throughout the paper, we discuss implications for experimental work, and, at the end, we provide a brief comparison with transition metal dichalcogenides.

The Role of Super-Atom Molecular Orbitals in Doped Fullerenes in a Femtosecond Intense Laser Field

The interaction of gas phase endohedral fullerene Ho₃N@C₈₀ with intense (0.1–5 × 10¹⁴ W/cm²), short (30 fs), 800 nm laser pulses was investigated. The power law dependence of Ho₃N@C₈₀^q+, q = 1–2, was found to be different from that of C₆₀. Time-dependent density functional theory computations revealed different light-induced ionization mechanisms. Unlike in C_60, in doped fullerenes, the breaking of the cage spherical symmetry makes super atomic molecular orbital (SAMO) states optically active. Theoretical calculations suggest that the fast ionization of the SAMO states in Ho₃N@C₈₀ is responsible for the n = 3 power law for singly charged parent molecules at intensities lower than 1.2 × 10¹⁴ W/cm².

High repetition pump-and-probe photoemission spectroscopy based on a compact fiber laser system

The paper describes a time-resolved photoemission (TRPES) apparatus equipped with a Yb-doped fiber laser system delivering 1.2-eV pump and 5.9-eV probe pulses at the repetition rate of 95 MHz. Time and energy resolutions are 11.3 meV and ∼310 fs, respectively, the latter is estimated by performing TRPES on a highly oriented pyrolytic graphite (HOPG). The high repetition rate is suited for achieving high signal-to-noise ratio in TRPES spectra, thereby facilitating investigations of ultrafast electronic dynamics in the low pump fluence (p) region. TRPES of polycrystalline bismuth (Bi) at p as low as 30 nJ/mm² is demonstrated. The laser source is compact and is docked to an existing TRPES apparatus based on a 250-kHz Ti:sapphire laser system. The 95-MHz system is less prone to space-charge broadening effects compared to the 250-kHz system, which we explicitly show in a systematic probe-power dependency of the Fermi cutoff of polycrystalline gold. We also describe that the TRPES response of an oriented Bi(111)/HOPG sample is useful for fine-tuning the spatial overlap of the pump and probe beams even when p is as low as 30 nJ/mm².

Excitonic Effects in Tungsten Disulfide Monolayers on Two-Layer Graphene

Light emission in atomically thin heterostructures is known to depend on the type of materials and the number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulfide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to 1 order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin-layered heterostructures.

Ultrafast Band Structure Control of a Two-Dimensional Heterostructure

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and interlayer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS2 on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS2 layer. Following optical excitation, the band gap is reduced by up to ∼400 meV on femtosecond time scales due to a persistence of strong electronic interactions despite the environmental screening by the n-doped graphene. This points to a large degree of tunability of both the electronic structure and the electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.

Pseudorelativistic laser-semiconductor quantum plasma interactions

A model is presented for the nonlinear interaction between a large-amplitude laser and semiconductor plasma in the semirelativistic quantum regime. The collective behavior of the electrons in the conduction band of a narrow-gap semiconductor is modeled by a Klein-Gordon equation, which is nonlinearly coupled with the electromagnetic (EM) wave through the Maxwell equations. The parametric instabilities involving the stimulated Raman scattering and modulational instabilities are analyzed theoretically and the resulting dispersion relation relation is solved numerically to assess the quantum effects on the instability. The study of the quasi-steady-state solution of the system and direct numerical simulations demonstrate the possibility of the formation of localized EM solitary structures trapped in electrons density holes.

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface-coupled topological insulator Bi2-x Mn x Se3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time constants on photoexcited carrier density and Mn content. In undoped samples (x  =  0), these time constants are exclusively governed by electron-electron and electron-phonon scattering, respectively, whereas in films with x  =  0.013-0.27 ultrafast carrier dynamics are completely controlled by photoexcited electron trapping by ionized Mn(2+) acceptors and their dimers. The shortest decay-time (~0.75 ps) measured for the film with x  =  0.27 suggests a great potential of Mn-doped Bi2Se3 films for applications in high-speed optoelectronic devices. Using Raman spectroscopy exploiting similar laser photon energy (1.58 eV), we demonstrate that due to indirect intersurface coupling in the films, the photoexcited electron trapping in the bulk enhances the electron-phonon interaction strength in Dirac surface states.

Robust Phonon-Plasmon Coupling in Quasifreestanding Graphene on Silicon Carbide

Using inelastic electron scattering in combination with dielectric theory simulations on differently prepared graphene layers on silicon carbide, we demonstrate that the coupling between the 2D plasmon of graphene and the surface optical phonon of the substrate cannot be quenched by modification of the interface via intercalation. The intercalation rather provides additional modes like, e.g., the silicon-hydrogen stretch mode in the case of hydrogen intercalation or the silicon-oxygen vibrations for water intercalation that couple to the 2D plasmons of graphene. Furthermore, in the case of bilayer graphene with broken inversion symmetry due to charge imbalance between the layers, we observe a similar coupling of the 2D plasmon to an internal infrared-active mode, the LO phonon mode. The coupling of graphene plasmons to vibrational modes of the substrate surface and internal infrared active modes is envisioned to provide an excellent tool for tailoring the plasmon band structure of monolayer and bilayer graphene for plasmonic devices such as plasmon filters or plasmonic waveguides. The rigidity of the effect furthermore suggests that it may be of importance for other 2D materials as well.

Intrinsic photo-conductance triggered by the plasmonic effect in graphene for terahertz detection

Terahertz (THz) technology is becoming more eminent for applications in diverse areas including biomedical imaging, communication, security and astronomy. However, THz detection still has some challenges due to the lack of sources and detectors despite decades of considerable effort. The appearance of graphene and its gapless spectrum enable their applications in sensitive detection of light over a very wide energy spectrum from ultraviolet, infrared to terahertz. Several mechanisms in graphene for THz detection have been proposed, such as photo-thermoelectric, Dyakonov-Shur (DS) and bolometric effects. Here, we propose a photoconductive mechanism assisted by plasma wave in a graphene field-effect transistor (FET). Sensitive response to THz radiation can be realized far below the interband transition at room temperature. The response is due to the contributions of both plasma drag and convection effects. The two effects can both trigger multiple potential wells along the channel, which are different from other quantum-transition mechanisms. The photoconductive effects can be explored in both periodic and non-periodic systems and can be substantially enhanced under the electric field. They could reduce the burden of structural complexity compared to other mechanisms like unilateral thermoelectric and DS detection. This paves the way for more judicious photo-detector design for versatile THz applications.

HELIOS--A laboratory based on high-order harmonic generation of extreme ultraviolet photons for time-resolved spectroscopy

In this paper, we present the HELIOS (High Energy Laser Induced Overtone Source) laboratory, an in-house high-order harmonic generation facility which generates extreme ultraviolet (XUV) photon pulses in the range of 15-70 eV with monochromatized XUV pulse lengths below 35 fs. HELIOS is a source for time-resolved pump-probe/two-color spectroscopy in the sub-50 fs range, which can be operated at 5 kHz or 10 kHz. An optical parametric amplifier is available for pump-probe experiments with wavelengths ranging from 240 nm to 20,000 nm. The produced XUV radiation is monochromatized by a grating in the so-called off-plane mount. Together with overall design parameters, first monochromatized spectra are shown with an intensity of 2 ⋅ 10(10) photons/s (at 5 kHz) in the 29th harmonic, after the monochromator. The XUV pulse duration is measured to be <25 fs after monochromatization.

All-Optical Reconstruction of Crystal Band Structure

The band structure of matter determines its properties. In solids, it is typically mapped with angle-resolved photoemission spectroscopy, in which the momentum and the energy of incoherent electrons are independently measured. Sometimes, however, photoelectrons are difficult or impossible to detect. Here we demonstrate an all-optical technique to reconstruct momentum-dependent band gaps by exploiting the coherent motion of electron-hole pairs driven by intense midinfrared femtosecond laser pulses. Applying the method to experimental data for a semiconductor ZnO crystal, we identify the split-off valence band as making the greatest contribution to tunneling to the conduction band. Our new band structure measurement technique is intrinsically bulk sensitive, does not require a vacuum, and has high temporal resolution, making it suitable to study reactions at ambient conditions, matter under extreme pressures, and ultrafast transient modifications to band structures.

Making transient optical reflection of graphene polarization dependent

The polarization dependence of transient optical reflection, induced by nonequilibrium carriers isotropically distributed in momentum space, of graphene on substrate is experimentally and theoretically investigated. It is found that this transient optical reflection could be made greatly polarization dependent by using oblique incidence for light, and the characteristic of this polarization dependence could be flexibly altered with incident angle and incident direction (from graphene to substrate, or from substrate to graphene). Our results suggest that through polarization of incident beam is an efficient way of manipulating graphene transient optical reflection.

Tracking Primary Thermalization Events in Graphene with Photoemission at Extreme Time Scales

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging energy with a third carrier, which is either accelerated or decelerated. Inverse Auger scattering is generally suppressed, as the decelerated carriers must have excess energies higher than the band gap itself. In graphene, which is gapless, inverse Auger scattering is, instead, predicted to be dominant at the earliest time delays. Here, <8  fs extreme-ultraviolet pulses are used to detect this imbalance, tracking both the number of excited electrons and their kinetic energy with time-and angle-resolved photoemission spectroscopy. Over a time window of approximately 25 fs after absorption of the pump pulse, we observe an increase in conduction band carrier density and a simultaneous decrease of the average carrier kinetic energy, revealing that relaxation is in fact dominated by inverse Auger scattering. Measurements of carrier scattering at extreme time scales by photoemission will serve as a guide to ultrafast control of electronic properties in solids for petahertz electronics.

Linking high harmonics from gases and solids

When intense light interacts with an atomic gas, recollision between an ionizing electron and its parent ion creates high-order harmonics of the fundamental laser frequency. This sub-cycle effect generates coherent soft X-rays and attosecond pulses, and provides a means to image molecular orbitals. Recently, high harmonics have been generated from bulk crystals, but what mechanism dominates the emission remains uncertain. To resolve this issue, we adapt measurement methods from gas-phase research to solid zinc oxide driven by mid-infrared laser fields of 0.25 volts per ångström. We find that when we alter the generation process with a second-harmonic beam, the modified harmonic spectrum bears the signature of a generalized recollision between an electron and its associated hole. In addition, we find that solid-state high harmonics are perturbed by fields so weak that they are present in conventional electronic circuits, thus opening a route to integrate electronics with attosecond and high-harmonic technology. Future experiments will permit the band structure of a solid to be tomographically reconstructed.

Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the π band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

Population inversion in monolayer and bilayer graphene

The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ∼130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.

Phonon-pump extreme-ultraviolet-photoemission probe in graphene: anomalous heating of Dirac carriers by lattice deformation

We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E_{1u} lattice vibration at 6.3  μm. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme-ultraviolet (XUV) pulses, we measure the response of the Dirac electrons near the K point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac electrons reaching lower peak temperatures and relaxing at faster rate compared to when the excitation is applied away from the phonon resonance or in monolayer samples. Frozen phonon calculations predict dramatic band structure changes when the E_{1u} vibration is driven, which we use to explain the anomalous dynamics observed in the experiment.

Tunable carrier multiplication and cooling in graphene

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we observe larger carrier multiplication factors (>3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (p-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.

Image-potential states and work function of graphene

Image-potential states of graphene on various substrates have been investigated by two-photon photoemission and scanning tunneling spectroscopy. They are used as a probe for the graphene-substrate interaction and resulting changes in the (local) work function. The latter is driven by the work function difference between graphene and the substrate. This results in a charge transfer which also contributes to core-level shifts in x-ray photoemission. In this review article, we give an overview over the theoretical models and the experimental data for image-potential states and work function of graphene on various substrates.

Theory of low-power ultra-broadband terahertz sideband generation in bi-layer graphene

In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron–hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (~10 kV cm⁻¹), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker THz fields. We find that a THz field of strength 1 kV cm⁻¹ can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron–hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at THz frequencies, facilitating ultrafast optical communications.

In terahertz sideband generation, an electron–hole pair is accelerated in a semiconductor by a terahertz field to then recombines forming a frequency comb, but so far experimental realizations have relied on the large fields of free electron lasers. Here, Crosse et al. propose bi-layer graphene for sideband generation at lower fields.