Structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron nitride

Probing Defectivity Beneath the Hydrocarbon Blanket in 2D hBN Using TEM-EELS

The controlled creation and manipulation of defects in 2D materials has become increasingly popular as a means to design and tune new material functionalities. However, defect characterization by direct atomic-scale imaging is often severely limited by surface contamination due to a blanket of hydrocarbons. Thus, analysis techniques that can characterize atomic-scale defects despite the contamination layer are advantageous. In this work, we take inspiration from X-ray absorption spectroscopy and use broad-beam electron energy loss spectroscopy (EELS) to characterize defect structures in 2D hexagonal boron nitride (hBN) based on averaged fine structure in the boron K-edge. Since EELS is performed in a transmission electron microscope (TEM), imaging can be performed in-situ to assess contamination levels and other factors such as tears in the fragile 2D sheets, which can affect the spectroscopic analysis. We demonstrate the TEM-EELS technique for 2D hBN samples irradiated with different ion types and doses, finding spectral signatures indicative of boron-oxygen bonding that can be used as a measure of sample defectiveness depending on the ion beam treatment. We propose that even in cases where surface contamination has been mitigated, the averaging-based TEM-EELS technique can be useful for efficient sample surveys to support atomically resolved EELS experiments.

Probing Correlation of Optical Emission and Defect Sites in Hexagonal Boron Nitride by High-Resolution STEM-EELS

Optically bright emitters in hexagonal boron nitride (hBN) often acting as a source of a single-photon are mostly attributed to point-defect centers, featuring localized intra-bandgap electronic states. Although vacancies, anti-sites, and impurities have been proposed as candidates, the exact physical and chemical nature of most hBN single-photon emitters (SPEs) within the visible region are still up for debate. Combining site-specific high-angle annular dark-field imaging (HAADF) with electron energy loss spectroscopy (EELS), we resolve and identify a few carbon substitutions among neighboring hBN hexagons, all within the same sample region, from which typical defect emission is observed. Our experimental results are further supported by first-principles calculations, through which the stability and possible optical transitions of the proposed carbon-defect complex are assessed. The presented correlation between optical emission and defects provides valuable information toward the controlled creation of emitters in hBN, highlighting carbon complexes as another probable cause of its visible SPEs.

In Situ Transmission Electron Microscopy Methods for Lithium-Ion Batteries

In situ Transmission Electron Microscopy (TEM) stands as an invaluable instrument for the real-time examination of the structural changes in materials. It features ultrahigh spatial resolution and powerful analytical capability, making it significantly versatile across diverse fields. Particularly in the realm of Lithium-Ion Batteries (LIBs), in situ TEM is extensively utilized for real-time analysis of phase transitions, degradation mechanisms, and the lithiation process during charging and discharging. This review aims to provide an overview of the latest advancements in in situ TEM applications for LIBs. Additionally, it compares the suitability and effectiveness of two techniques: the open cell technique and the liquid cell technique. The technical aspects of both the open cell and liquid cell techniques are introduced, followed by a comparison of their applications in cathodes, anodes, solid electrolyte interphase (SEI) formation, and lithium dendrite growth in LIBs. Lastly, the review concludes by stimulating discussions on possible future research trajectories that hold potential to expedite the progression of battery technology.

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self-assembling bottom-up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom-up self-assembly is extended to a new approach using a mixture containing a 2Dlayer-by-layer film growth, followed by a 3D VAN film growth. In this work, the two-phase nanocomposite thin films are based on LaAlO3 :LaBO3 , grown on a lattice-mismatched SrTiO3001 (001) single crystal. The 2D-to-3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.

Heteroepitaxial Growth of B5 -Site-Rich Ru Nanoparticles Guided by Hexagonal Boron Nitride for Low-Temperature Ammonia Dehydrogenation

Ruthenium is one of the most active catalysts for ammonia dehydrogenation and is essential for the use of ammonia as a hydrogen storage material. The B₅ -type site on the surface of ruthenium is expected to exhibit the highest catalytic activity for ammonia dehydrogenation, but the number of these sites is typically low. Here, a B₅ -site-rich ruthenium catalyst is synthesized by exploiting the crystal symmetry of a hexagonal boron nitride support. In the prepared ruthenium catalyst, ruthenium nanoparticles are formed epitaxially on hexagonal boron nitride sheets with hexagonal planar morphologies, in which the B₅ sites predominate along the nanoparticle edges. By activating the catalyst under the reaction condition, the population of B₅ sites further increases as the facets of the ruthenium nanoparticles develop. The electron density of the Ru nanoparticles also increases during catalyst activation. The synthesized catalyst shows superior catalytic activity for ammonia dehydrogenation compared to previously reported catalysts. This work demonstrates that morphology control of a catalyst via support-driven heteroepitaxy can be exploited for synthesizing highly active heterogeneous catalysts with tailored atomic structures.

Atomically Precise Control of Carbon Insertion into hBN Monolayer Point Vacancies using a Focused Electron Beam Guide

Precise controlled filling of point vacancies in hBN with carbon atoms is demonstrated using a focused electron beam method, which guides mobile C atoms into the desired defect site. Optimization of the technique enables the insertion of a single C atom into a selected monovacancy, and preferential defect filling with sub-2 nm accuracy. Increasing the C insertion process leads to thicker 3D C nanodots seeded at the hBN point vacancy site. Other light elements are also observed to bind to hBN vacancies, including O, opening up a wide range of complex defect structures that include B, C, N, and O atoms. The ability to selectively fill point vacancies in hBN with C atoms provides a pathway for creating non-hydrogenated covalently bonded C molecules embedded in the insulating hBN.

Atomic-Scale Electrical Field Mapping of Hexagonal Boron Nitride Defects

The distribution of electric fields in hexagonal boron nitride is mapped down to the atomic level inside a scanning transmission electron microscope by using the recently introduced technique of differential phase contrast imaging. The maps are calculated and displayed in real time, along with conventional annular dark-field images, through the use of custom-developed hardware and software. An increased electric field is observed around boron monovacancies and subsequently mapped and measured relative to the perfect lattice. The edges of extended defects feature enhanced electric fields, which can be used to trap diffusing adatoms. The magnitude of the electric field produced by the different types of edges is compared to monolayer areas, confirming previous predictions regarding their stability. These observations provide insight into the properties of this interesting material, serving as a suitable platform on which to test the limits of this technique, and encourage further work, such as dynamic experiments coupled with in situ techniques.

Ion transport across solid-state ion channels perturbed by directed strain

We combine quantum-chemical calculations and molecular dynamics simulations to consider aqueous ion flow across non-axisymmetric nanopores in monolayer graphene and MoS2. When the pore-containing membrane is subject to uniaxial tensile strains applied in various directions, the corresponding permeability exhibits considerable directional dependence. This anisotropy is shown to arise from directed perturbations of the local electrostatics by the corresponding pore deformation, as enabled by the pore edge geometries and atomic compositions. By considering nanopores with ionic permeability that depends on the strain direction, we present model systems that may yield a detailed understanding of the structure-function relationship in solid-state and biological ion channels. Specifically, the observed anisotropic effects potentially enable the use of permeation measurements across strained membranes to obtain directional profiles of ion-pore energetics as contributed by groups of atoms or even individual atoms at the pore edge. The resulting insight may facilitate the development of subnanoscale pores with novel functionalities arising from locally asymmetric pore edge features.

Recent Progress of In Situ Transmission Electron Microscopy for Energy Materials

In situ transmission electron microscopy (TEM) is one of the most powerful approaches for revealing physical and chemical process dynamics at atomic resolutions. The most recent developments for in situ TEM techniques are summarized; in particular, how they enable visualization of various events, measure properties, and solve problems in the field of energy by revealing detailed mechanisms at the nanoscale. Related applications include rechargeable batteries such as Li-ion, Na-ion, Li-O₂ , Na-O₂ , Li-S, etc., fuel cells, thermoelectrics, photovoltaics, and photocatalysis. To promote various applications, the methods of introducing the in situ stimuli of heating, cooling, electrical biasing, light illumination, and liquid and gas environments are discussed. The progress of recent in situ TEM in energy applications should inspire future research on new energy materials in diverse energy-related areas.

Highly mechanosensitive ion channels from graphene-embedded crown ethers

The ability to tune ionic permeation across nanoscale pores profoundly impacts diverse fields from nanofluidic computing to drug delivery. Here, we take advantage of complex formation between crown ethers and dissolved metal ions to demonstrate graphene-based ion channels highly sensitive to externally applied lattice strain. We perform extensive room-temperature molecular dynamics simulations of the effects of tensile lattice strain on ion permeation across graphene-embedded crown ether pores. Our findings suggest the first instance of solid-state ion channels with an exponential permeation sensitivity to strain, yielding an order of magnitude ion current increase for 2% of isotropic lattice strain. Significant permeation tuning is also shown to be achievable with anisotropic strains. Finally, we demonstrate strain-controllable ion sieving in salt mixtures. The observed high mechanosensitivity is shown to arise from strain-induced control over the competition between ion-crown and ion-solvent interactions, mediated by the atomic thinness of graphene.

Fabrication of Subnanometer-Precision Nanopores in Hexagonal Boron Nitride

We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of the pore shape and size. Previous methods of pore production in other 2D materials typically create pores with irregular geometry and imprecise diameters. In contrast, other studies have shown that with careful control of electron irradiation, defects in h-BN grow with pristine zig-zag edges at quantized triangular sizes, but they have failed to demonstrate production and control of isolated defects. In this work, we combine these techniques to yield a method in which we can create individual size-quantized triangular nanopores through an h-BN sheet. The pores are created using the electron beam of a conventional transmission electron microscope; which can strip away multiple layers of h-BN exposing single-layer regions, introduce single vacancies, and preferentially grow vacancies only in the single-layer region. We further demonstrate how the geometry of these pores can be altered beyond triangular by changing beam conditions. Precisely size- and geometry-tuned nanopores could find application in molecular sensing, DNA sequencing, water desalination, and molecular separation.

First-principles investigation of quantum emission from hBN defects

Hexagonal boron nitride (hBN) has recently emerged as a fascinating platform for room-temperature quantum photonics due to the discovery of robust visible light single-photon emitters. In order to utilize these emitters, it is necessary to have a clear understanding of their atomic structure and the associated excitation processes that give rise to this single photon emission. Here, we performed density-functional theory (DFT) and constrained DFT calculations for a range of hBN point defects in order to identify potential emission candidates. By applying a number of criteria on the electronic structure of the ground state and the atomic structure of the excited states of the considered defects, and then calculating the Huang-Rhys (HR) factor, we found that the C_BV_N defect, in which a carbon atom substitutes a boron atom and the opposite nitrogen atom is removed, is a potential emission source with a HR factor of 1.66, in good agreement with the experimental HR factor. We calculated the photoluminescence (PL) line shape for this defect and found that it reproduces a number of key features in the experimental PL lineshape.

Taming interfacial electronic properties of platinum nanoparticles on vacancy-abundant boron nitride nanosheets for enhanced catalysis

Taming interfacial electronic effects on Pt nanoparticles modulated by their concomitants has emerged as an intriguing approach to optimize Pt catalytic performance. Here, we report Pt nanoparticles assembled on vacancy-abundant hexagonal boron nitride nanosheets and their use as a model catalyst to embrace an interfacial electronic effect on Pt induced by the nanosheets with N-vacancies and B-vacancies for superior CO oxidation catalysis. Experimental results indicate that strong interaction exists between Pt and the vacancies. Bader charge analysis shows that with Pt on B-vacancies, the nanosheets serve as a Lewis acid to accept electrons from Pt, and on the contrary, when Pt sits on N-vacancies, the nanosheets act as a Lewis base for donating electrons to Pt. The overall-electronic effect demonstrates an electron-rich feature of Pt after assembling on hexagonal boron nitride nanosheets. Such an interfacial electronic effect makes Pt favour the adsorption of O2, alleviating CO poisoning and promoting the catalysis.

Chain Vacancies in 2D Crystals

Defects in bulk crystals can be classified into vacancies, interstitials, grain boundaries, stacking faults, dislocations, and so forth. In particular, the vacancy in semiconductors is a primary defect that governs electrical transport. Concentration of vacancies depends mainly on the growth conditions. Individual vacancies instead of aggregated vacancies are usually energetically more favorable at room temperature because of the entropy contribution. This phenomenon is not guaranteed in van der Waals 2D materials due to the reduced dimensionality (reduced entropy). Here, it is reported that the 1D connected/aggregated vacancies are energetically stable at room temperature. Transmission electron microscopy observations demonstrate the preferential alignment direction of the vacancy chains varies in different 2D crystals: MoS₂ and WS₂ prefer 〈2¯11〉 direction, while MoTe₂ prefers 〈1¯10〉 direction. This difference is mainly caused by the different strain effect near the chalcogen vacancies. Black phosphorous also exhibits directional double-chain vacancies along 〈01〉 direction. Density functional theory calculations predict that the chain vacancies act as extended gap (conductive) states. The observation of the chain vacancies in 2D crystals directly explains the origin of n-type behavior in MoTe₂ devices in recent experiments and offers new opportunities for electronic structure engineering with various 2D materials.

Formation and Dynamics of Electron-Irradiation-Induced Defects in Hexagonal Boron Nitride at Elevated Temperatures

The atomic structure, stability, and dynamics of defects in hexagonal boron nitride (h-BN) are investigated using an aberration-corrected transmission electron microscope operated at 80 kV between room temperature and 1000 °C. At temperatures above 700 °C, parallelogram- and hexagon-shaped defects with zigzag edges become prominent, in contrast to the triangular defects typically observed at lower temperatures. The appearance of 120° corners at defect vertices indicates the coexistence of both N- and B-terminated zigzag edges in the same defect. In situ dynamics studies show that the hexagonal holes grow by electron-induced sputtering of B-N chains, and that at high temperatures these chains can migrate from one defect corner to another. We complement the experiments with first-principles calculation which consider the thermal equilibrium formation energy of different defect configurations. It is shown that, below a critical defect size, hexagonal defects have the lowest formation energy and therefore are the more-stable configuration, and triangular defects are energetically metastable but can be "frozen in" under experimental conditions. We also discuss the possible contributions of several dynamic processes to the temperature-dependent defect formation.