1
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Patel RN, Fishman REK, Huang TY, Gusdorff JA, Fehr DA, Hopper DA, Breitweiser SA, Porat B, Flatté ME, Bassett LC. Room Temperature Dynamics of an Optically Addressable Single Spin in Hexagonal Boron Nitride. NANO LETTERS 2024; 24:7623-7628. [PMID: 38860722 DOI: 10.1021/acs.nanolett.4c01333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2024]
Abstract
Hexagonal boron nitride (h-BN) hosts pure single-photon emitters that have shown evidence of optically detected electronic spin dynamics. However, the electrical and chemical structures of these optically addressable spins are unknown, and the nature of their spin-optical interactions remains mysterious. Here, we use time-domain optical and microwave experiments to characterize a single emitter in h-BN exhibiting room temperature optically detected magnetic resonance. Using dynamical simulations, we constrain and quantify transition rates in the model, and we design optical control protocols that optimize the signal-to-noise ratio for spin readout. This constitutes a necessary step toward quantum control of spin states in h-BN.
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Affiliation(s)
- Raj N Patel
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Rebecca E K Fishman
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Tzu-Yung Huang
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jordan A Gusdorff
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - David A Fehr
- Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, United States
| | - David A Hopper
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - S Alex Breitweiser
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Benjamin Porat
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Michael E Flatté
- Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, United States
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Lee C Bassett
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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2
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Pelliciari J, Mejia E, Woods JM, Gu Y, Li J, Chand SB, Fan S, Watanabe K, Taniguchi T, Bisogni V, Grosso G. Elementary excitations of single-photon emitters in hexagonal boron nitride. NATURE MATERIALS 2024:10.1038/s41563-024-01866-4. [PMID: 38654140 DOI: 10.1038/s41563-024-01866-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 03/15/2024] [Indexed: 04/25/2024]
Abstract
Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms operating across the infrared to ultraviolet spectrum. Although it is widely acknowledged that defects are responsible for single-photon emitters in hBN, crucial details regarding their origin, electronic levels and orbital involvement remain unknown. Here we employ a combination of resonant inelastic X-ray scattering and photoluminescence spectroscopy in defective hBN, unveiling an elementary excitation at 285 meV that gives rise to a plethora of harmonics correlated with single-photon emitters. We discuss the importance of N π* anti-bonding orbitals in shaping the electronic states of the emitters. The discovery of elementary excitations in hBN provides fundamental insights into quantum emission in low-dimensional materials, paving the way for future investigations in other platforms.
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Affiliation(s)
- Jonathan Pelliciari
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA.
| | - Enrique Mejia
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA
| | - John M Woods
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA
| | - Yanhong Gu
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Jiemin Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Saroj B Chand
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA
| | - Shiyu Fan
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Valentina Bisogni
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Gabriele Grosso
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA.
- Physics Program, Graduate Center, City University of New York, New York, NY, USA.
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3
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Mai TNA, Ali S, Hossain MS, Chen C, Ding L, Chen Y, Solntsev AS, Mou H, Xu X, Medhekar N, Tran TT. Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19340-19349. [PMID: 38570338 DOI: 10.1021/acsami.3c18032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years, thanks to their environmental robustness, high brightness, and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such an understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock that induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strain caused by cryogenic temperature shock. Our study sheds light on the stability of the quantum emitters under extreme conditions─similar to those countered in outer space.
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Affiliation(s)
- Thi Ngoc Anh Mai
- School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Sajid Ali
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Md Shakhawath Hossain
- School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Chaohao Chen
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Lei Ding
- School of Biomedical Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Yongliang Chen
- Department of Physics, The University of Hong Kong, Pokfulam, Hong Kong 999077, China
| | - Alexander S Solntsev
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Hongwei Mou
- School of Biomedical Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Xiaoxue Xu
- School of Biomedical Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Nikhil Medhekar
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Toan Trong Tran
- School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
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4
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Kumar A, Samaner Ç, Cholsuk C, Matthes T, Paçal S, Oyun Y, Zand A, Chapman RJ, Saerens G, Grange R, Suwanna S, Ateş S, Vogl T. Polarization Dynamics of Solid-State Quantum Emitters. ACS NANO 2024. [PMID: 38335970 PMCID: PMC10883057 DOI: 10.1021/acsnano.3c08940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Quantum emitters in solid-state crystals have recently attracted a great deal of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key parameters that plays a crucial role in various applications, such as quantum computation, which uses the indistinguishability of photons. However, the degree of single-photon polarization is typically quantified using the time-averaged photoluminescence intensity of single emitters, which provides limited information about the dipole properties in solids. In this work, we use single defects in hexagonal boron nitride and nanodiamond as efficient room-temperature single-photon sources to reveal the origin and temporal evolution of the dipole orientation in solid-state quantum emitters. The angles of the excitation and emission dipoles relative to the crystal axes were determined experimentally and then calculated using density functional theory, which resulted in characteristic angles for every specific defect that can be used as an efficient tool for defect identification and understanding their atomic structure. Moreover, the temporal polarization dynamics revealed a strongly modified linear polarization visibility that depends on the excited-state decay time of the individual excitation. This effect can potentially be traced back to the excitation of excess charges in the local crystal environment. Understanding such hidden time-dependent mechanisms can further improve the performance of polarization-sensitive experiments, particularly that for quantum communication with single-photon emitters.
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Affiliation(s)
- Anand Kumar
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Çağlar Samaner
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Chanaprom Cholsuk
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Tjorben Matthes
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Serkan Paçal
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Yağız Oyun
- Department of Photonics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Ashkan Zand
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Robert J Chapman
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Grégoire Saerens
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Rachel Grange
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Sujin Suwanna
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, 10400 Bangkok, Thailand
| | - Serkan Ateş
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Tobias Vogl
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
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5
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Zhong D, Gao S, Saccone M, Greer JR, Bernardi M, Nadj-Perge S, Faraon A. Carbon-Related Quantum Emitter in Hexagonal Boron Nitride with Homogeneous Energy and 3-Fold Polarization. NANO LETTERS 2024; 24:1106-1113. [PMID: 38240528 PMCID: PMC10835729 DOI: 10.1021/acs.nanolett.3c03628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Most hexagonal boron nitride (hBN) single-photon emitters (SPEs) studied to date suffer from variable emission energy and unpredictable polarization, two crucial obstacles to their application in quantum technologies. Here, we report an SPE in hBN with an energy of 2.2444 ± 0.0013 eV created via carbon implantation that exhibits a small inhomogeneity of the emission energy. Polarization-resolved measurements reveal aligned absorption and emission dipole orientations with a 3-fold distribution, which follows the crystal symmetry. Photoluminescence excitation (PLE) spectroscopy results show the predictability of polarization is associated with a reproducible PLE band, in contrast with the non-reproducible bands found in previous hBN SPE species. Photon correlation measurements are consistent with a three-level model with weak coupling to a shelving state. Our ab initio excited-state calculations shed light on the atomic origin of this SPE defect, which consists of a pair of substitutional carbon atoms located at boron and nitrogen sites separated by a hexagonal unit cell.
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Affiliation(s)
- Ding Zhong
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Shiyuan Gao
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Max Saccone
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States
| | - Julia R Greer
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Marco Bernardi
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Stevan Nadj-Perge
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Andrei Faraon
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
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6
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Fischer M, Sajid A, Iles-Smith J, Hötger A, Miakota DI, Svendsen MK, Kastl C, Canulescu S, Xiao S, Wubs M, Thygesen KS, Holleitner AW, Stenger N. Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin. NANOSCALE 2023; 15:14215-14226. [PMID: 37594441 PMCID: PMC10472209 DOI: 10.1039/d3nr01511d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 07/21/2023] [Indexed: 08/19/2023]
Abstract
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of ∼2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: C2CB, C2CN, and VNCB. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy ∼170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.
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Affiliation(s)
- Moritz Fischer
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Ali Sajid
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lynby, Denmark
- School of Physics and Astronomy, Monash University, Victoria 3800, Australia
| | - Jake Iles-Smith
- Department of Electrical and Electronic Engineering, The University of Manchester, Sackville Street Building, Manchester M1 3BB, UK
| | - Alexander Hötger
- Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
| | - Denys I Miakota
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
| | - Mark K Svendsen
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lynby, Denmark
| | - Christoph Kastl
- Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
| | - Stela Canulescu
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
| | - Sanshui Xiao
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Martijn Wubs
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Kristian S Thygesen
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lynby, Denmark
| | - Alexander W Holleitner
- Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
| | - Nicolas Stenger
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
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7
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Cholsuk C, Suwanna S, Vogl T. Comprehensive Scheme for Identifying Defects in Solid-State Quantum Systems. J Phys Chem Lett 2023; 14:6564-6571. [PMID: 37458585 DOI: 10.1021/acs.jpclett.3c01475] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
A solid-state quantum emitter is a crucial component for optical quantum technologies, ideally with a compatible wavelength for efficient coupling to other components in a quantum network. It is essential to understand fluorescent defects that lead to specific emitters. In this Letter, we employ density functional theory (DFT) to demonstrate the calculations of the complete optical fingerprints of quantum emitters in hexagonal boron nitride. Our results suggest that instead of comparing a single optical property, like the zero-phonon line energy, multiple properties should be used when comparing simulations to the experiment. Moreover, we apply this approach to predict the suitability of using the emitters in specific quantum applications. We therefore apply DFT calculations to identify quantum emitters with a lower risk of misassignments and a way to design optical quantum systems. Hence, we provide a recipe for classification and generation of universal quantum emitters in future hybrid quantum networks.
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Affiliation(s)
- Chanaprom Cholsuk
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Sujin Suwanna
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
| | - Tobias Vogl
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
- Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, 07745 Jena, Germany
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8
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Kozawa D, Li SX, Ichihara T, Rajan AG, Gong X, He G, Koman VB, Zeng Y, Kuehne M, Silmore KS, Parviz D, Liu P, Liu AT, Faucher S, Yuan Z, Warner J, Blankschtein D, Strano MS. Discretized hexagonal boron nitride quantum emitters and their chemical interconversion. NANOTECHNOLOGY 2023; 34:115702. [PMID: 36595236 DOI: 10.1088/1361-6528/aca984] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm-1. Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission.
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Affiliation(s)
- Daichi Kozawa
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 3510198, Japan
| | - Sylvia Xin Li
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Takeo Ichihara
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Energy and System R&D Department, Chemistry and Chemical Process Laboratory, Corporate R&D, Asahi Kasei Corporation, Kurashiki, Okayama 7118510, Japan
| | - Ananth Govind Rajan
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Department of Chemical Engineering, Indian Institute of Science, Bengaluru, Karnataka 560012, India
| | - Xun Gong
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Guangwei He
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Volodymyr B Koman
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Yuwen Zeng
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Matthias Kuehne
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Kevin S Silmore
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Dorsa Parviz
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Pingwei Liu
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, Zhejiang Province 310027, People's Republic of China
| | - Albert Tianxiang Liu
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Department of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109, United States of America
| | - Samuel Faucher
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Zhe Yuan
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Jamie Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, United States of America
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, United States of America
| | - Daniel Blankschtein
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
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9
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Gritsienko AV, Duleba A, Pugachev MV, Kurochkin NS, Vlasov II, Vitukhnovsky AG, Kuntsevich AY. Photodynamics of Bright Subnanosecond Emission from Pure Single-Photon Sources in Hexagonal Boron Nitride. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4495. [PMID: 36558349 PMCID: PMC9782090 DOI: 10.3390/nano12244495] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Revised: 12/06/2022] [Accepted: 12/16/2022] [Indexed: 06/17/2023]
Abstract
Bright and stable emitters of single indistinguishable photons are crucial for quantum technologies. The origin of the promising bright emitters recently observed in hexagonal boron nitride (hBN) still remains unclear. This study reports pure single-photon sources in multi-layered hBN at room temperature that demonstrate high emission rates. The quantum emitters are introduced with argon beam treatment and air annealing of mechanically exfoliated hBN flakes with thicknesses of 5-100 nm. Spectral and time-resolved measurements reveal the emitters have more than 1 GHz of excited-to-ground state transition rate. The observed photoswitching between dark and bright states indicates the strong sensitivity of the emitter to the electrostatic environment and the importance of the indirect excitation for the photodynamics.
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Affiliation(s)
- Alexander V. Gritsienko
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
| | - Aliaksandr Duleba
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
| | - Mikhail V. Pugachev
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
| | - Nikita S. Kurochkin
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
| | - Igor I. Vlasov
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov str. 38, 119991 Moscow, Russia
| | - Alexei G. Vitukhnovsky
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
- Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia
| | - Alexandr Yu. Kuntsevich
- P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia
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10
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Li X, Chen X, Wei N, Chen C, Yang Z, Xie H, He J, Dong N, Dan Y, Wang J. Nonlinear absorption and integrated photonics applications of MoSSe. OPTICS EXPRESS 2022; 30:32924-32936. [PMID: 36242344 DOI: 10.1364/oe.465566] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Accepted: 08/12/2022] [Indexed: 06/16/2023]
Abstract
This study explores the wavelength-dependent and pulse-width-dependent nonlinear optical properties of liquid-phase exfoliated molybdenum sulfide selenide (MoSSe) nanosheets. The saturable absorption response of MoSSe nanosheets in the visible region is better than that in the near-infrared region, and the response under 6-ns pulse excitation is better than that of a 380-fs pulse. Furthermore, based on the first-principles calculations, we designed a phase modulator and optimized its structure by integrating a monolayer MoSSe into a silicon slot waveguide. The simulation results revealed that the phase shift could achieve a high optical extinction. Consequently, MoSSe exhibits satisfactory nonlinear optical properties and an excellent potential for applications in optoelectronic devices.
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11
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Su C, Zhang F, Kahn S, Shevitski B, Jiang J, Dai C, Ungar A, Park JH, Watanabe K, Taniguchi T, Kong J, Tang Z, Zhang W, Wang F, Crommie M, Louie SG, Aloni S, Zettl A. Tuning colour centres at a twisted hexagonal boron nitride interface. NATURE MATERIALS 2022; 21:896-902. [PMID: 35835818 DOI: 10.1038/s41563-022-01303-4] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
Abstract
The colour centre platform holds promise for quantum technologies, and hexagonal boron nitride has attracted attention due to the high brightness and stability, optically addressable spin states and wide wavelength coverage discovered in its emitters. However, its application is hindered by the typically random defect distribution and complex mesoscopic environment. Here, employing cathodoluminescence, we demonstrate on-demand activation and control of colour centre emission at the twisted interface of two hexagonal boron nitride flakes. Further, we show that colour centre emission brightness can be enhanced by two orders of magnitude by tuning the twist angle. Additionally, by applying an external voltage, nearly 100% brightness modulation is achieved. Our ab initio GW and GW plus Bethe-Salpeter equation calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron-hole recombination. This mechanism is further exploited to draw nanoscale colour centre patterns using electron beams.
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Affiliation(s)
- Cong Su
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Fang Zhang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, Southern University of Science and Technology, Shenzhen, China
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
| | - Salman Kahn
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Brian Shevitski
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jingwei Jiang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Chunhui Dai
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Alex Ungar
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Ji-Hoon Park
- Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- Research Centre for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Jing Kong
- Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
| | - Wenqing Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Feng Wang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Michael Crommie
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Steven G Louie
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Shaul Aloni
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Alex Zettl
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA.
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12
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Mathur N, Mukherjee A, Gao X, Luo J, McCullian BA, Li T, Vamivakas AN, Fuchs GD. Excited-state spin-resonance spectroscopy of V[Formula: see text] defect centers in hexagonal boron nitride. Nat Commun 2022; 13:3233. [PMID: 35680866 PMCID: PMC9184587 DOI: 10.1038/s41467-022-30772-z] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 05/14/2022] [Indexed: 11/17/2022] Open
Abstract
The recently discovered spin-active boron vacancy (V[Formula: see text]) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.
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Affiliation(s)
- Nikhil Mathur
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
| | | | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
| | - Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY USA
| | | | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN USA
| | - A. Nick Vamivakas
- The Institute of Optics, University of Rochester, Rochester, NY USA
- Materials Science, University of Rochester, Rochester, NY USA
- Department of Physics and Astronomy, University of Rochester, Rochester, NY USA
- Center for Coherence and Quantum Optics, University of Rochester, Rochester, NY USA
| | - Gregory D. Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY USA
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13
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Ghosh Dastidar M, Thekkooden I, Nayak PK, Praveen Bhallamudi V. Quantum emitters and detectors based on 2D van der Waals materials. NANOSCALE 2022; 14:5289-5313. [PMID: 35322836 DOI: 10.1039/d1nr08193d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.
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Affiliation(s)
- Madhura Ghosh Dastidar
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Immanuel Thekkooden
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pramoda K Nayak
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Vidya Praveen Bhallamudi
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
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14
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Tan Q, Lai JM, Liu XL, Guo D, Xue Y, Dou X, Sun BQ, Deng HX, Tan PH, Aharonovich I, Gao W, Zhang J. Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:1331-1337. [PMID: 35073101 DOI: 10.1021/acs.nanolett.1c04647] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.
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Affiliation(s)
- Qinghai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dan Guo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongzhou Xue
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiuming Dou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bao-Quan Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science University of Technology Sydney, New South Wales 2007, Australia
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
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15
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Chen Y, Li C, White S, Nonahal M, Xu ZQ, Watanabe K, Taniguchi T, Toth M, Tran TT, Aharonovich I. Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47283-47292. [PMID: 34549932 DOI: 10.1021/acsami.1c14863] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Single-photon emitters in hexagonal boron nitride (hBN) are promising constituents for integrated quantum photonics. Specifically, engineering these emitters in large-area, high-quality, exfoliated hBN is needed for their incorporation into photonic devices and two dimensional heterostructures. Here, we report on two different routes to generate high-density quantum emitters with excellent optical properties-including high brightness and photostability. We study in detail high-temperature annealing and plasma treatments as an efficient means to generate dense emitters. We show that both an optimal oxygen flow rate and annealing temperature are required for the formation of high-density quantum emitters. In parallel, we demonstrate that the plasma treatment in various environments, followed by standard annealing is also an effective route for emission engineering. Our work provides vital information for the fabrication of quantum emitters in high-quality, exfoliated hBN flakes and paves the way toward the integration of the quantum emitters with photonic devices.
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Affiliation(s)
- Yongliang Chen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Chi Li
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Simon White
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milad Nonahal
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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16
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Liu H, You CY, Li J, Galligan PR, You J, Liu Z, Cai Y, Luo Z. Synthesis of hexagonal boron nitrides by chemical vapor deposition and their use as single photon emitters. NANO MATERIALS SCIENCE 2021. [DOI: 10.1016/j.nanoms.2021.03.002] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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17
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Fröch JE, Spencer LP, Kianinia M, Totonjian DD, Nguyen M, Gottscholl A, Dyakonov V, Toth M, Kim S, Aharonovich I. Coupling Spin Defects in Hexagonal Boron Nitride to Monolithic Bullseye Cavities. NANO LETTERS 2021; 21:6549-6555. [PMID: 34288695 DOI: 10.1021/acs.nanolett.1c01843] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that boron vacancy spin defects couple to the monolithic hBN cavity system and exhibit a 6.5-fold enhancement. In addition, by comparative finite-difference time-domain modeling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal-to-noise ratio. Thus, our experimental results, supported by simulations, constitute a first step toward integration of hBN spin defects with photonic resonators for a scalable spin-photon interface.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Lesley P Spencer
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Daniel D Totonjian
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Minh Nguyen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Victoria 3010, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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18
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Wang X, Cao J, Lu Z, Cohen A, Kitadai H, Li T, Tan Q, Wilson M, Lui CH, Smirnov D, Sharifzadeh S, Ling X. Spin-induced linear polarization of photoluminescence in antiferromagnetic van der Waals crystals. NATURE MATERIALS 2021; 20:964-970. [PMID: 33903748 DOI: 10.1038/s41563-021-00968-7] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Accepted: 02/24/2021] [Indexed: 06/12/2023]
Abstract
Antiferromagnets are promising components for spintronics due to their terahertz resonance, multilevel states and absence of stray fields. However, the zero net magnetic moment of antiferromagnets makes the detection of the antiferromagnetic order and the investigation of fundamental spin properties notoriously difficult. Here, we report an optical detection of Néel vector orientation through an ultra-sharp photoluminescence in the van der Waals antiferromagnet NiPS3 from bulk to atomically thin flakes. The strong correlation between spin flipping and electric dipole oscillator results in a linear polarization of the sharp emission, which aligns perpendicular to the spin orientation in the crystal. By applying an in-plane magnetic field, we achieve manipulation of the photoluminescence polarization. This correlation between emitted photons and spins in layered magnets provides routes for investigating magneto-optics in two-dimensional materials, and hence opens a path for developing opto-spintronic devices and antiferromagnet-based quantum information technologies.
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Affiliation(s)
- Xingzhi Wang
- Department of Chemistry, Boston University, Boston, MA, USA.
| | - Jun Cao
- Department of Chemistry, Boston University, Boston, MA, USA
| | - Zhengguang Lu
- National High Magnetic Field Laboratory, Tallahassee, FL, USA
- Department of Physics, Florida State University, Tallahassee, FL, USA
| | - Arielle Cohen
- Division of Materials Science and Engineering, Boston University, Boston, MA, USA
| | - Hikari Kitadai
- Department of Chemistry, Boston University, Boston, MA, USA
| | - Tianshu Li
- Division of Materials Science and Engineering, Boston University, Boston, MA, USA
| | - Qishuo Tan
- Department of Chemistry, Boston University, Boston, MA, USA
| | - Matthew Wilson
- Department of Physics and Astronomy, University of California, Riverside, CA, USA
| | - Chun Hung Lui
- Department of Physics and Astronomy, University of California, Riverside, CA, USA
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, USA
| | - Sahar Sharifzadeh
- Department of Chemistry, Boston University, Boston, MA, USA
- Division of Materials Science and Engineering, Boston University, Boston, MA, USA
- Department of Electrical and Computer Engineering, Boston University, Boston, MA, USA
- Department of Physics, Boston University, Boston, MA, USA
| | - Xi Ling
- Department of Chemistry, Boston University, Boston, MA, USA.
- Division of Materials Science and Engineering, Boston University, Boston, MA, USA.
- The Photonics Center, Boston University, Boston, MA, USA.
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19
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Shaik ABDAJWI, Palla P. Optical quantum technologies with hexagonal boron nitride single photon sources. Sci Rep 2021; 11:12285. [PMID: 34112837 PMCID: PMC8192930 DOI: 10.1038/s41598-021-90804-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Accepted: 05/11/2021] [Indexed: 02/05/2023] Open
Abstract
Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter's fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.
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Affiliation(s)
- Akbar Basha Dhu-Al-Jalali-Wal-Ikram Shaik
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India
| | - Penchalaiah Palla
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India.
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20
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Wang Q, Wee ATS. Photoluminescence upconversion of 2D materials and applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:223001. [PMID: 33784662 DOI: 10.1088/1361-648x/abf37f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Photoluminescence (PL) upconversion is a phenomenon involving light-matter interactions, where the energy of emitted photons is higher than that of the incident photons. PL upconversion is an intriguing process in two-dimensional materials and specifically designed 2D heterostructures, which have potential upconversion applications in optoelectronic devices, bioimaging, and semiconductor cooling. In this review, we focus on the recent advances in photoluminescence upconversion in two-dimensional materials and their heterostructures. We discuss the upconversion mechanisms, applications, and future outlook of upconversion in two-dimensional materials.
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Affiliation(s)
- Qixing Wang
- Max Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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21
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Duchemin I, Blase X. Cubic-Scaling All-Electron GW Calculations with a Separable Density-Fitting Space-Time Approach. J Chem Theory Comput 2021; 17:2383-2393. [PMID: 33797245 DOI: 10.1021/acs.jctc.1c00101] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
We present an implementation of the GW space-time approach that allows cubic-scaling all-electron calculations with standard Gaussian basis sets without exploiting any localization or sparsity considerations. The independent-electron susceptibility is constructed in a time representation over a nonuniform distribution of real-space locations {rk} optimized within a separable resolution-of-the-identity framework to reproduce standard Coulomb-fitting calculations with meV accuracy. The compactness of the obtained {rk} distribution leads to a crossover with the standard Coulomb-fitting scheme for system sizes below a few hundred electrons. The needed analytic continuation follows a recent approach that requires the continuation of the screened Coulomb potential rather than the much more structured self-energy. The present scheme is benchmarked over large molecular sets, and scaling properties are demonstrated on a family of defected hexagonal boron-nitride flakes containing up to 6000 electrons.
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Affiliation(s)
- Ivan Duchemin
- Université Grenoble Alpes, CEA, IRIG-MEM-L_Sim, 38054 Grenoble, France
| | - Xavier Blase
- Université Grenoble Alpes, CNRS, Inst NEEL, F-38042 Grenoble, France
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22
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Mendelson N, Chugh D, Reimers JR, Cheng TS, Gottscholl A, Long H, Mellor CJ, Zettl A, Dyakonov V, Beton PH, Novikov SV, Jagadish C, Tan HH, Ford MJ, Toth M, Bradac C, Aharonovich I. Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride. NATURE MATERIALS 2021; 20:321-328. [PMID: 33139892 DOI: 10.1038/s41563-020-00850-y] [Citation(s) in RCA: 105] [Impact Index Per Article: 35.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2020] [Accepted: 09/30/2020] [Indexed: 05/05/2023]
Abstract
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN via various bottom-up synthesis methods and directly through ion implantation, we provide direct evidence that the visible SPEs are carbon related. Room-temperature optically detected magnetic resonance is demonstrated on ensembles of these defects. We perform ion-implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of the simplest 12 carbon-containing defect species suggest the negatively charged [Formula: see text] defect as a viable candidate and predict that out-of-plane deformations make the defect environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to the deterministic engineering of these defects for quantum photonic devices.
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Affiliation(s)
- Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Sydney, New South Wales, Australia
| | - Dipankar Chugh
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia
| | - Jeffrey R Reimers
- School of Mathematical and Physical Sciences, University of Technology Sydney, Sydney, New South Wales, Australia
- International Centre for Quantum and Molecular Structures and Department of Physics, Shanghai University, Shanghai, China
| | - Tin S Cheng
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Hu Long
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California and the Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | | | - Alex Zettl
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California and the Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Peter H Beton
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - Sergei V Novikov
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia
| | - Michael J Ford
- School of Mathematical and Physical Sciences, University of Technology Sydney, Sydney, New South Wales, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Sydney, New South Wales, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Sydney, New South Wales, Australia
| | - Carlo Bradac
- School of Mathematical and Physical Sciences, University of Technology Sydney, Sydney, New South Wales, Australia
- Department of Physics & Astronomy, Trent University, Peterborough, Ontario, Canada
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Sydney, New South Wales, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Sydney, New South Wales, Australia.
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23
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Jara C, Rauch T, Botti S, Marques MAL, Norambuena A, Coto R, Castellanos-Águila JE, Maze JR, Munoz F. First-Principles Identification of Single Photon Emitters Based on Carbon Clusters in Hexagonal Boron Nitride. J Phys Chem A 2021; 125:1325-1335. [PMID: 33554602 DOI: 10.1021/acs.jpca.0c07339] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
A recent study associates carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN, suggests the existence of SPEs based on carbon clusters. Here, by means of density functional theory calculations, we studied clusters of substitutional carbon atoms up to tetramers in h-BN. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in the experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements because of the large spectral weight of low-energy breathing modes, ubiquitous in such defects.
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Affiliation(s)
- Cesar Jara
- LAAS-CNRS, Université de Toulouse, CNRS, 31031 Toulouse, France
| | - Tomáš Rauch
- Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.,European Theoretical Spectroscopy Facility
| | - Silvana Botti
- Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.,European Theoretical Spectroscopy Facility
| | - Miguel A L Marques
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle/Saale, Germany
| | - Ariel Norambuena
- Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor, 7550000 Santiago, Chile
| | - Raul Coto
- Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor, 7550000 Santiago, Chile
| | - J E Castellanos-Águila
- Departamento de Estudios Multidisciplinarios, Universidad de Guanajuato, Av. Yacatitas, S/N Col. Yacatitas, Yuriria, Guanajuato 36940, Mexico
| | - Jeronimo R Maze
- Institute of Physics, Pontificia Universidad Católica de Chile, 7820436 Santiago, Chile.,Research Center for Nanoscale and Advanced Materials (CIEN), Pontificia Universidad Católica de Chile, 7820436 Santiago, Chile
| | - Francisco Munoz
- Center for the Development of Nanoscience and Nanotechnology, CEDENNA, 9170124 Santiago, Chile.,Departamento de Física, Facultad de Ciencias, Universidad de Chile, 7800024 Santiago Chile
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24
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Rigosi AF, Levy AL, Snure MR, Glavin NR. Turn of the decade: versatility of 2D hexagonal boron nitride. JPHYS MATERIALS 2021; 4:10.1088/2515-7639/abf1ab. [PMID: 34409257 PMCID: PMC8370033 DOI: 10.1088/2515-7639/abf1ab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The era of two-dimensional (2D) materials, in its current form, truly began at the time that graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D hexagonal boron nitride (h-BN) had expanded in popularity, with use of the thin isolator permeating a significant number of fields in condensed matter and beyond. Due to the impractical nature of cataloguing every use or research pursuit, this review will cover ground in the following three subtopics relevant to this versatile material: growth, electrical measurements, and applications in optics and photonics. Through understanding how the material has been utilized, one may anticipate some of the exciting directions made possible by the research conducted up through the turn of this decade.
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Affiliation(s)
- Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Antonio L Levy
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Michael R Snure
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
| | - Nicholas R Glavin
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
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25
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Head-Marsden K, Flick J, Ciccarino CJ, Narang P. Quantum Information and Algorithms for Correlated Quantum Matter. Chem Rev 2020; 121:3061-3120. [PMID: 33326218 DOI: 10.1021/acs.chemrev.0c00620] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Discoveries in quantum materials, which are characterized by the strongly quantum-mechanical nature of electrons and atoms, have revealed exotic properties that arise from correlations. It is the promise of quantum materials for quantum information science superimposed with the potential of new computational quantum algorithms to discover new quantum materials that inspires this Review. We anticipate that quantum materials to be discovered and developed in the next years will transform the areas of quantum information processing including communication, storage, and computing. Simultaneously, efforts toward developing new quantum algorithmic approaches for quantum simulation and advanced calculation methods for many-body quantum systems enable major advances toward functional quantum materials and their deployment. The advent of quantum computing brings new possibilities for eliminating the exponential complexity that has stymied simulation of correlated quantum systems on high-performance classical computers. Here, we review new algorithms and computational approaches to predict and understand the behavior of correlated quantum matter. The strongly interdisciplinary nature of the topics covered necessitates a common language to integrate ideas from these fields. We aim to provide this common language while weaving together fields across electronic structure theory, quantum electrodynamics, algorithm design, and open quantum systems. Our Review is timely in presenting the state-of-the-art in the field toward algorithms with nonexponential complexity for correlated quantum matter with applications in grand-challenge problems. Looking to the future, at the intersection of quantum information science and algorithms for correlated quantum matter, we envision seminal advances in predicting many-body quantum states and describing excitonic quantum matter and large-scale entangled states, a better understanding of high-temperature superconductivity, and quantifying open quantum system dynamics.
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Affiliation(s)
- Kade Head-Marsden
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Johannes Flick
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
| | - Christopher J Ciccarino
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.,Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
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26
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Yim D, Yu M, Noh G, Lee J, Seo H. Polarization and Localization of Single-Photon Emitters in Hexagonal Boron Nitride Wrinkles. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36362-36369. [PMID: 32677428 DOI: 10.1021/acsami.0c09740] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Color centers in two-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nanoscale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theory calculations, we find that the wrinkle's curvature plays a crucial role in localizing vacancy-based SPE candidates and aligning the defect's symmetry plane to the wrinkle direction. By performing optical measurements on SPEs created in h-BN single-crystal flakes, we experimentally confirm the wrinkle-induced generation of SPEs and their polarization alignment to the wrinkle direction. Our results not only provide a new route to controlling the atomic position and the optical property of the SPEs but also revealed the possible crystallographic origin of the SPEs in h-BN, greatly enhancing their potential for use in solid-state quantum photonics and quantum information processing.
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Affiliation(s)
- Donggyu Yim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Mihyang Yu
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Gichang Noh
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Jieun Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Hosung Seo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
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27
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Fröch JE, Kim S, Mendelson N, Kianinia M, Toth M, Aharonovich I. Coupling Hexagonal Boron Nitride Quantum Emitters to Photonic Crystal Cavities. ACS NANO 2020; 14:7085-7091. [PMID: 32401482 DOI: 10.1021/acsnano.0c01818] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si3N4 hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Sejeong Kim
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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28
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Khatri P, Ramsay AJ, Malein RN, Chong HMH, Luxmoore IJ. Optical Gating of Photoluminescence from Color Centers in Hexagonal Boron Nitride. NANO LETTERS 2020; 20:4256-4263. [PMID: 32383892 PMCID: PMC7304068 DOI: 10.1021/acs.nanolett.0c00751] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2020] [Revised: 05/08/2020] [Indexed: 05/05/2023]
Abstract
We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2 eV. Resonant, or quasi-resonant, excitation of photoluminescence also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Repumping back into the bright state has a step-like spectrum with a defect-dependent threshold between 2.25 and 2.6 eV. This behavior is consistent with photoionization and charging between optically bright and dark states of the defect. Furthermore, a second zero phonon line, detuned by +0.4 eV, is observed in absorption with orthogonal polarization to the emission, evidencing an additional energy level in the color center.
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Affiliation(s)
- Prince Khatri
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
| | - Andrew J. Ramsay
- Hitachi
Cambridge Laboratory, Hitachi Europe Limited, Cambridge, CB3 0HE, United Kingdom
| | - Ralph Nicholas
Edward Malein
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
| | - Harold M. H. Chong
- Sustainable
Electronics Technology Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
| | - Isaac J. Luxmoore
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
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29
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Castelletto S, Inam FA, Sato SI, Boretti A. Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin-photon interface. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:740-769. [PMID: 32461875 PMCID: PMC7214868 DOI: 10.3762/bjnano.11.61] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2020] [Accepted: 04/16/2020] [Indexed: 05/09/2023]
Abstract
Single-photon sources and their optical spin readout are at the core of applications in quantum communication, quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide) with proven single-photon emission from the visible to infrared, a quantum spin-photon interface, and ancilla qubits, it is expected that other material platforms could emerge with similar characteristics in the near future. These two materials also naturally lead to monolithic integrated photonics as both are good photonic materials. While so far the verification of single-photon sources was based on discovery, assignment and then assessment and control of their quantum properties for applications, a better approach could be to identify applications and then search for the material that could address the requirements of the application in terms of quantum properties of the defects. This approach is quite difficult as it is based mostly on the reliability of modeling and predicting of color center properties in various materials, and their experimental verification is challenging. In this paper, we review some recent advances in an emerging material, low-dimensional (2D, 1D, 0D) hexagonal boron nitride (h-BN), which could lead to establishing such a platform. We highlight the recent achievements of the specific material for the expected applications in quantum technologies, indicating complementary outstanding properties compared to the other 3D bulk materials.
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Affiliation(s)
| | - Faraz A Inam
- Dept. of Physics, Aligarh Muslim University, Aligarh, U.P. 202002, India
| | - Shin-ichiro Sato
- National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma, 370-1292, Japan
| | - Alberto Boretti
- Mechanical Engineering Department, College of Engineering, Prince Mohammad Bin Fahd University, Al Khobar 31952, Kingdom of Saudi Arabia
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30
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Hayee F, Yu L, Zhang JL, Ciccarino CJ, Nguyen M, Marshall AF, Aharonovich I, Vučković J, Narang P, Heinz TF, Dionne JA. Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated optical and electron microscopy. NATURE MATERIALS 2020; 19:534-539. [PMID: 32094492 DOI: 10.1038/s41563-020-0616-9] [Citation(s) in RCA: 64] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2019] [Accepted: 01/16/2020] [Indexed: 05/21/2023]
Abstract
Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure challenge their technological utility. Here, we directly correlate hBN quantum emission with local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nanobeam electron diffraction. Across 40 emitters, we observe zero phonon lines (ZPLs) in PL and CL ranging from 540 to 720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, at least four distinct defect classes are responsible for the observed emission range, and all four classes are stable upon both optical and electron illumination. Our results provide a foundation for future atomic-scale optical characterization of colour centres.
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Affiliation(s)
- Fariah Hayee
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA.
| | - Leo Yu
- Department of Applied Physics, Stanford University, Stanford, CA, USA
| | | | - Christopher J Ciccarino
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Minh Nguyen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Australia
| | - Ann F Marshall
- Stanford Nano Shared Facilities, Stanford University, Stanford, CA, USA
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Australia
| | - Jelena Vučković
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, CA, USA
- SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Jennifer A Dionne
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA.
- Department of Radiology, Stanford University, Stanford, CA, USA.
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31
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Sajid A, Ford MJ, Reimers JR. Single-photon emitters in hexagonal boron nitride: a review of progress. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2020; 83:044501. [PMID: 31846956 DOI: 10.1088/1361-6633/ab6310] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.
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Affiliation(s)
- A Sajid
- University of Technology Sydney, School of Mathematical and Physical Sciences, Ultimo, New South Wales 2007, Australia. CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark. Department of Physics, GC University Faisalabad, Allama Iqbal Road, 38000 Faisalabad, Pakistan. Author to whom any correspondence should be addressed
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32
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Boll MK, Radko IP, Huck A, Andersen UL. Photophysics of quantum emitters in hexagonal boron-nitride nano-flakes. OPTICS EXPRESS 2020; 28:7475-7487. [PMID: 32225974 DOI: 10.1364/oe.386629] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2019] [Accepted: 02/18/2020] [Indexed: 06/10/2023]
Abstract
Quantum emitters in hexagonal boron nitride (hBN) have attracted significant interest due to their bright and narrowband photon emission even at room temperature. The wide-bandgap two-dimensional material incorporates crystal defects of yet-unknown configuration, introducing discrete energy levels with radiative transition frequencies in the visible spectral range. The commonly observed high brightness together with the moderate fluorescence lifetime indicates a high quantum efficiency, but the exact dynamics and the underlying energy level structure remain elusive. In this study we present a systematic and detailed analysis of the photon statistics recorded for several individual emitters. We extract the individual decay rates by modeling the second-order correlation functions using a set of rate equations based on an energy level scheme involving long-lived states. Our analysis clearly indicates excitation-power-dependent non-radiative couplings to at least two metastable levels and confirms a near unity quantum efficiency.
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33
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Shi Z, Wang X, Li Q, Yang P, Lu G, Jiang R, Wang H, Zhang C, Cong C, Liu Z, Wu T, Wang H, Yu Q, Xie X. Vapor-liquid-solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates. Nat Commun 2020; 11:849. [PMID: 32051410 PMCID: PMC7015929 DOI: 10.1038/s41467-020-14596-3] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2019] [Accepted: 01/22/2020] [Indexed: 12/20/2022] Open
Abstract
Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe82B18 alloy and N2 as reactants. Liquid Fe82B18 not only supplies boron but also continuously dissociates nitrogen atoms from the N2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures. Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe82B18 alloy and N2 as reactants.
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Affiliation(s)
- Zhiyuan Shi
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Xiujun Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Qingtian Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Peng Yang
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Guangyuan Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Ren Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,State Key Laboratory of Precision Spectroscopy, School of Physics and Material Science, East China Normal University, 3663N. Zhongshan Road, Shanghai, 200062, China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Chao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Chunxiao Cong
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Zhi Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.,School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai, 200031, China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China. .,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China. .,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.
| | - Qingkai Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.,School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai, 200031, China
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34
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Brash AJ, Iles-Smith J, Phillips CL, McCutcheon DPS, O'Hara J, Clarke E, Royall B, Wilson LR, Mørk J, Skolnick MS, Fox AM, Nazir A. Light Scattering from Solid-State Quantum Emitters: Beyond the Atomic Picture. PHYSICAL REVIEW LETTERS 2019; 123:167403. [PMID: 31702333 DOI: 10.1103/physrevlett.123.167403] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2019] [Indexed: 06/10/2023]
Abstract
Coherent scattering of light by a single quantum emitter is a fundamental process at the heart of many proposed quantum technologies. Unlike atomic systems, solid-state emitters couple to their host lattice by phonons. Using a quantum dot in an optical nanocavity, we resolve these interactions in both time and frequency domains, going beyond the atomic picture to develop a comprehensive model of light scattering from solid-state emitters. We find that even in the presence of a low-Q cavity with high Purcell enhancement, phonon coupling leads to a sideband that is completely insensitive to excitation conditions and to a nonmonotonic relationship between laser detuning and coherent fraction, both of which are major deviations from atomlike behavior.
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Affiliation(s)
- Alistair J Brash
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Jake Iles-Smith
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Catherine L Phillips
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Dara P S McCutcheon
- Quantum Engineering Technology Labs, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1FD, United Kingdom
| | - John O'Hara
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Edmund Clarke
- EPSRC National Epitaxy Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DE, United Kingdom
| | - Benjamin Royall
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Luke R Wilson
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Jesper Mørk
- Department of Photonics Engineering, DTU Fotonik, Technical University of Denmark, Building 343, 2800 Kongens Lyngby, Denmark
| | - Maurice S Skolnick
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - A Mark Fox
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Ahsan Nazir
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
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35
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Turiansky ME, Alkauskas A, Bassett LC, Van de Walle CG. Dangling Bonds in Hexagonal Boron Nitride as Single-Photon Emitters. PHYSICAL REVIEW LETTERS 2019; 123:127401. [PMID: 31633955 DOI: 10.1103/physrevlett.123.127401] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Indexed: 05/22/2023]
Abstract
Hexagonal boron nitride has been found to host color centers that exhibit single-photon emission, but the microscopic origin of these emitters is unknown. We propose boron dangling bonds as the likely source of the observed single-photon emission around 2 eV. An optical transition where an electron is excited from a doubly occupied boron dangling bond to a localized B p_{z} state gives rise to a zero-phonon line of 2.06 eV and emission with a Huang-Rhys factor of 2.3. This transition is linearly polarized with the absorptive and emissive dipole aligned. Because of the energetic position of the states within the band gap, indirect excitation through the conduction band will occur for sufficiently large excitation energies, leading to the misalignment of the absorptive and emissive dipoles seen in experiment. Our calculations predict a singlet ground state and the existence of a metastable triplet state, in agreement with experiment.
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Affiliation(s)
- Mark E Turiansky
- Department of Physics, University of California, Santa Barbara, California 93106-9530, USA
| | - Audrius Alkauskas
- Center for Physical Sciences and Technology (FTMC), Vilnius LT-10257, Lithuania
| | - Lee C Bassett
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Chris G Van de Walle
- Materials Department, University of California, Santa Barbara, California 93106-5050, USA
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36
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Abstract
Layered materials are very attractive for studies of light-matter interactions at the nanoscale. In particular, isolated quantum systems such as color centers and quantum dots embedded in these materials are gaining interest due to their potential use in a variety of quantum technologies and nanophotonics. Here, we review the field of nonclassical light emission from van der Waals crystals and atomically thin two-dimensional materials. We focus on transition metal dichalcogenides and hexagonal boron nitride and discuss the fabrication and properties of quantum emitters in these systems and proof-of-concept experiments that provide a foundation for their integration in on-chip nanophotonic circuits. These experiments include tuning of the emission wavelength, electrical excitation, and coupling of the emitters to waveguides, dielectric cavities, and plasmonic resonators. Finally, we discuss current challenges in the field and provide an outlook to further stimulate scientific discussion.
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Affiliation(s)
- Milos Toth
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
| | - Igor Aharonovich
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
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37
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Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature. Nat Commun 2019; 10:222. [PMID: 30644413 PMCID: PMC6333818 DOI: 10.1038/s41467-018-08185-8] [Citation(s) in RCA: 55] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2018] [Accepted: 12/17/2018] [Indexed: 12/24/2022] Open
Abstract
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. Here, we report room-temperature observations of strongly anisotropic photoluminescence patterns as a function of applied magnetic field for select quantum emitters in h-BN. Field-dependent variations in the steady-state photoluminescence and photon emission statistics are consistent with an electronic model featuring a spin-dependent inter-system crossing between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN.
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38
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Shi Z, Lu G, Yang P, Wu T, Yin W, Zhang C, Jiang R, Xie X. Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy. RSC Adv 2019; 9:10155-10158. [PMID: 35520910 PMCID: PMC9062396 DOI: 10.1039/c9ra00595a] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2019] [Accepted: 03/26/2019] [Indexed: 12/01/2022] Open
Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN) is highly appreciated for its excellent insulating performance and absence of dangling bonds, which could be employed to maintain the intrinsic properties of 2D materials. However, controllable synthesis of large scale multilayer h-BN is still very challenging. Here, we demonstrate chemical vapor deposition (CVD) growth of multilayer h-BN by using iron boride (Fe2B) alloy and nitrogen (N2) as precursors. Different from the self-limited growth mechanism of monolayer h-BN on catalytic metal surfaces, with sufficient B source in the bulk, Fe2B alloy promotes the controllable isothermal segregation of multilayer h-BN by reacting with active N atoms on the surface of the substrate. Microscopic and spectroscopic characterizations prove the high uniformity and crystalline quality of h-BN with a highly orientated layered lattice structure. The achievement of large scale multilayer h-BN in this work would facilitate its applications in 2D electronics and optoelectronics in the future. CVD growth of large scale and high quality multilayer h-BN.![]()
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Affiliation(s)
- Zhiyuan Shi
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Guangyuan Lu
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Peng Yang
- State Key Laboratory of ASIC and System
- School of Information Science and Technology
- Fudan University
- Shanghai 200433
- China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Weijun Yin
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Chao Zhang
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Ren Jiang
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
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39
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Wang Q, Zhang Q, Zhao X, Luo X, Wong CPY, Wang J, Wan D, Venkatesan T, Pennycook SJ, Loh KP, Eda G, Wee ATS. Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride. NANO LETTERS 2018; 18:6898-6905. [PMID: 30260651 DOI: 10.1021/acs.nanolett.8b02804] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Hexagonal boron nitride (h-BN) was recently reported to display single photon emission from ultraviolet to near-infrared range due to the existence of defects. Single photon emission has potential applications in quantum information processing and optoelectronics. These findings trigger increasing research interests in h-BN defects, such as revealing the nature of the defects. Here, we report another intriguing defect property in h-BN, namely photoluminescence (PL) upconversion (anti-Stokes process). The energy gain by the PL upconversion is about 162 meV. The anomalous PL upconversion is attributed to optical phonon absorption in the one-photon excitation process, based on excitation power, excitation wavelength, and temperature-dependence investigations. Possible constitutions of the defects are discussed from the results of scanning transmission electron microscopy (STEM) studies and theoretical calculations. These findings show that defects in h-BN exhibit strong defect-phonon coupling. The results from STEM and theoretical calculations are beneficial for understanding the constitution of the h-BN defects.
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Affiliation(s)
- Qixing Wang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Qi Zhang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Xiaoxu Zhao
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics , Sun Yat-sen University , Guangzhou 510275 , Guangdong , People's Republic of China
- Department of Applied Physics , the Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong , People's Republic of China
| | - Calvin Pei Yu Wong
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) , 2 Fusionopolis Way, Innovis #08-03 , Singapore 138634 , Singapore
| | - Junyong Wang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Dongyang Wan
- NUSNNI-NanoCore , National University of Singapore , 117411 , Singapore
| | - T Venkatesan
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
- NUSNNI-NanoCore , National University of Singapore , 117411 , Singapore
- Department of Materials Science & Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
- Department of Electrical and Computer Engineering , National University of Singapore , 9 Engineering Drive 1 , 117575 , Singapore
| | - Stephen J Pennycook
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
- NUSNNI-NanoCore , National University of Singapore , 117411 , Singapore
- Department of Materials Science & Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
| | - Kian Ping Loh
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Goki Eda
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Andrew T S Wee
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
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40
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Noh G, Choi D, Kim JH, Im DG, Kim YH, Seo H, Lee J. Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride. NANO LETTERS 2018; 18:4710-4715. [PMID: 29932664 DOI: 10.1021/acs.nanolett.8b01030] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Single-photon emitters play an essential role in quantum technologies, including quantum computing and quantum communications. Atomic defects in hexagonal boron nitride ( h-BN) have recently emerged as new room-temperature single-photon emitters in solid-state systems, but the development of scalable and tunable h-BN single-photon emitters requires external methods that can control the emission energy of individual defects. Here, by fabricating van der Waals heterostructures of h-BN and graphene, we demonstrate the electrical control of single-photon emission from atomic defects in h-BN via the Stark effect. By applying an out-of-plane electric field through graphene gates, we observed Stark shifts as large as 5.4 nm per GV/m. The Stark shift generated upon a vertical electric field suggests the existence of out-of-plane dipole moments associated with atomic defect emitters, which is supported by first-principles theoretical calculations. Furthermore, we found field-induced discrete modification and stabilization of emission intensity, which were reversibly controllable with an external electric field.
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Affiliation(s)
- Gichang Noh
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
| | - Daebok Choi
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
| | - Jin-Hun Kim
- Department of Physics , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Dong-Gil Im
- Department of Physics , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Yoon-Ho Kim
- Department of Physics , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Hosung Seo
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
| | - Jieun Lee
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
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41
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Xue Y, Wang H, Tan Q, Zhang J, Yu T, Ding K, Jiang D, Dou X, Shi JJ, Sun BQ. Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes. ACS NANO 2018; 12:7127-7133. [PMID: 29957923 DOI: 10.1021/acsnano.8b02970] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Research on hexagonal boron nitride (hBN) has been intensified recently due to the application of hBN as a promising system of single-photon emitters. To date, the single photon origin remains under debate even though many experiments and theoretical calculations have been performed. We have measured the pressure-dependent photoluminescence (PL) spectra of hBN flakes at low temperatures by using a diamond anvil cell device. The absolute values of the pressure coefficients of discrete PL emission lines are all below 15 meV/GPa, which is much lower than the pressure-induced 36 meV/GPa redshift rate of the hBN bandgap. These PL emission lines originate from atom-like localized defect levels confined within the bandgap of the hBN flakes. Interestingly, the experimental results of the pressure-dependent PL emission lines present three different types of pressure responses corresponding to a redshift (negative pressure coefficient), a blueshift (positive pressure coefficient), or even a sign change from negative to positive. Density functional theory calculations indicate the existence of competition between the intralayer and interlayer interaction contributions, which leads to the different pressure-dependent behaviors of the PL peak shift.
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Affiliation(s)
- Yongzhou Xue
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
- College of Materials Science and Optoelectronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Hui Wang
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Qinghai Tan
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
- College of Materials Science and Optoelectronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Jun Zhang
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Tongjun Yu
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Kun Ding
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Desheng Jiang
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Xiuming Dou
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Jun-Jie Shi
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Bao-Quan Sun
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
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42
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Ziegler J, Blaikie A, Fathalizadeh A, Miller D, Yasin FS, Williams K, Mohrhardt J, McMorran BJ, Zettl A, Alemán B. Single-Photon Emitters in Boron Nitride Nanococoons. NANO LETTERS 2018; 18:2683-2688. [PMID: 29583012 DOI: 10.1021/acs.nanolett.8b00632] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are attractive for a variety of quantum and photonic technologies because they combine ultra-bright, room-temperature single-photon emission with an atomically thin crystal. However, the emitter's prominence is hindered by large, strain-induced wavelength shifts. We report the discovery of a visible-wavelength, single-photon emitter (SPE) in a zero-dimensional boron nitride allotrope (the boron nitride nanococoon, BNNC) that retains the excellent optical characteristics of few-layer hBN while possessing an emission line variation that is lower by a factor of 5 than the hBN emitter. We determined the emission source to be the nanometer-size BNNC through the cross-correlation of optical confocal microscopy with high-resolution scanning and transmission electron microscopy. Altogether, this discovery enlivens color centers in BN materials and, because of the BN nanococoon's size, opens new and exciting opportunities in nanophotonics, quantum information, biological imaging, and nanoscale sensing.
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Affiliation(s)
| | | | - Aidin Fathalizadeh
- Department of Physics , University of California , Berkeley , California 97403 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | | | | | | | | | | | - Alex Zettl
- Department of Physics , University of California , Berkeley , California 97403 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
- Kavli Energy NanoScience Institute , Berkeley , California 94720 , United States
- Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
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43
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Schell AW, Svedendahl M, Quidant R. Quantum Emitters in Hexagonal Boron Nitride Have Spectrally Tunable Quantum Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1704237. [PMID: 29473231 DOI: 10.1002/adma.201704237] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2017] [Revised: 11/29/2017] [Indexed: 05/22/2023]
Abstract
Understanding the properties of novel solid-state quantum emitters is pivotal for a variety of applications in research fields ranging from quantum optics to biology. Recently discovered defects in hexagonal boron nitride are especially interesting, as they offer much desired characteristics such as narrow emission lines and photostability. Here, the dependence of the emission on the excitation wavelength is studied. It is found that, in order to achieve bright single-photon emission with high quantum efficiency, the excitation wavelength has to be matched to the emitter. This is a strong indication that the emitters possess a complex level scheme and cannot be described by a simple two or three-level system. Using this excitation dependence of the emission, further insight to the internal level scheme is gained and it is demonstrated how to distinguish different emitters both spatially as well as in terms of their photon correlations.
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Affiliation(s)
- Andreas W Schell
- ICFO-Institut de Ciencies Fotoniques, Barcelona Institute of Science and Technology, 08860, Castelldefels (Barcelona), Spain
| | - Mikael Svedendahl
- ICFO-Institut de Ciencies Fotoniques, Barcelona Institute of Science and Technology, 08860, Castelldefels (Barcelona), Spain
| | - Romain Quidant
- ICFO-Institut de Ciencies Fotoniques, Barcelona Institute of Science and Technology, 08860, Castelldefels (Barcelona), Spain
- ICREA-Instituciò Catalana de Recerca i Estudis Avançats, 08010, Barcelona, Spain
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44
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Kianinia M, Bradac C, Sontheimer B, Wang F, Tran TT, Nguyen M, Kim S, Xu ZQ, Jin D, Schell AW, Lobo CJ, Aharonovich I, Toth M. All-optical control and super-resolution imaging of quantum emitters in layered materials. Nat Commun 2018; 9:874. [PMID: 29491451 PMCID: PMC5830405 DOI: 10.1038/s41467-018-03290-0] [Citation(s) in RCA: 49] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2017] [Accepted: 02/02/2018] [Indexed: 11/10/2022] Open
Abstract
Layered van der Waals materials are emerging as compelling two-dimensional platforms for nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Among these, hexagonal boron nitride (hBN) is known to host ultra-bright, room-temperature quantum emitters, whose nature is yet to be fully understood. Here we present a set of measurements that give unique insight into the photophysical properties and level structure of hBN quantum emitters. Specifically, we report the existence of a class of hBN quantum emitters with a fast-decaying intermediate and a long-lived metastable state accessible from the first excited electronic state. Furthermore, by means of a two-laser repumping scheme, we show an enhanced photoluminescence and emission intensity, which can be utilized to realize a new modality of far-field super-resolution imaging. Our findings expand current understanding of quantum emitters in hBN and show new potential ways of harnessing their nonlinear optical properties in sub-diffraction nanoscopy.
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Affiliation(s)
- Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Carlo Bradac
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
| | - Bernd Sontheimer
- Institut für Physik, Humboldt-Universität zu Berlin, 12489, Berlin, Germany
| | - Fan Wang
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Minh Nguyen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Sejeong Kim
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Dayong Jin
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Andreas W Schell
- Department of Electronic Science and Engineering, Kyoto University, 615-8510, Kyoto, Japan
| | - Charlene J Lobo
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
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Reimers JR, Sajid A, Kobayashi R, Ford MJ. Understanding and Calibrating Density-Functional-Theory Calculations Describing the Energy and Spectroscopy of Defect Sites in Hexagonal Boron Nitride. J Chem Theory Comput 2018; 14:1602-1613. [DOI: 10.1021/acs.jctc.7b01072] [Citation(s) in RCA: 53] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Jeffrey R. Reimers
- International Centre for Quantum and Molecular Structures and Department of Physics, Shanghai University, Shanghai 200444, China
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - A. Sajid
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- Department of Physics, GC University Faisalabad, Allama Iqbal Road, 38000 Faisalabad, Pakistan
| | - Rika Kobayashi
- National Computational Infrastructure, The Australian National University, Canberra, Austrailian Capital Territory 2600, Australia
| | - Michael J. Ford
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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46
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Chejanovsky N, Kim Y, Zappe A, Stuhlhofer B, Taniguchi T, Watanabe K, Dasari D, Finkler A, Smet JH, Wrachtrup J. Quantum Light in Curved Low Dimensional Hexagonal Boron Nitride Systems. Sci Rep 2017; 7:14758. [PMID: 29116207 PMCID: PMC5676806 DOI: 10.1038/s41598-017-15398-2] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2017] [Accepted: 10/26/2017] [Indexed: 01/17/2023] Open
Abstract
Low-dimensional wide bandgap semiconductors open a new playing field in quantum optics using sub-bandgap excitation. In this field, hexagonal boron nitride (h-BN) has been reported to host single quantum emitters (QEs), linking QE density to perimeters. Furthermore, curvature/perimeters in transition metal dichalcogenides (TMDCs) have demonstrated a key role in QE formation. We investigate a curvature-abundant BN system - quasi one-dimensional BN nanotubes (BNNTs) fabricated via a catalyst-free method. We find that non-treated BNNT is an abundant source of stable QEs and analyze their emission features down to single nanotubes, comparing dispersed/suspended material. Combining high spatial resolution of a scanning electron microscope, we categorize and pin-point emission origin to a scale of less than 20 nm, giving us a one-to-one validation of emission source with dimensions smaller than the laser excitation wavelength, elucidating nano-antenna effects. Two emission origins emerge: hybrid/entwined BNNT. By artificially curving h-BN flakes, similar QE spectral features are observed. The impact on emission of solvents used in commercial products and curved regions is also demonstrated. The 'out of the box' availability of QEs in BNNT, lacking processing contamination, is a milestone for unraveling their atomic features. These findings open possibilities for precision engineering of QEs, puts h-BN under a similar 'umbrella' of TMDC's QEs and provides a model explaining QEs spatial localization/formation using electron/ion irradiation and chemical etching.
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Affiliation(s)
- Nathan Chejanovsky
- Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Youngwook Kim
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Andrea Zappe
- Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany
| | - Benjamin Stuhlhofer
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Durga Dasari
- Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Amit Finkler
- Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany.
| | - Jurgen H Smet
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Jörg Wrachtrup
- Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
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