Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites

Disentangling Photodoping, Photoconductivity, and Photosuperconductivity in the Cuprates

The normal-state conductivity and superconducting critical temperature of oxygen-deficient YBa_{2}Cu_{3}O_{7-δ} can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects-termed persistent photoconductivity and photosuperconductivity (PPS)-has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of high-temperature superconductivity itself. Here, we make essential steps toward understanding PPS. While the models proposed so far assume that it is caused by a carrier-density increase (photodoping) observed concomitantly, our experiments contradict such conventional belief: we demonstrate that it is instead linked to a photo-induced decrease of the electronic scattering rate. Furthermore, we find that the latter effect and photodoping are completely disconnected and originate from different microscopic mechanisms, since they present different wavelength and oxygen-content dependences as well as strikingly different relaxation dynamics. Besides helping disentangle photodoping, persistent photoconductivity, and PPS, our results provide new evidence for the intimate relation between critical temperature and scattering rate, a key ingredient in modern theories on high-temperature superconductivity.

Polarization-dependent photoinduced metal-insulator transitions in manganites

In correlated oxides, collaborative manipulation on light intensity, wavelength, pulse duration and polarization has yielded many exotic discoveries, such as phase transitions and novel quantum states. In view of potential optoelectronic applications, tailoring long-lived static properties by light-induced effects is highly desirable. So far, the polarization state of light has rarely been reported as a control parameter for this purpose. Here, we report polarization-dependent metal-to-insulator transition (MIT) in phase-separated manganite thin films, introducing a new degree of freedom to control static MIT. Specifically, we observed giant photoinduced resistance jumps with striking features: (1) a single resistance jump occurs upon a linearly polarized light incident with a chosen polarization angle, and a second resistance jump occurs when the polarization angle changes; (2) the amplitude of the second resistance jump depends sensitively on the actual change of the polarization angles. Linear transmittance measurements reveal that the origin of the above phenomena is closely related to the coexistence of anisotropic micro-domains. Our results represent a first step to utilize light polarization as an active knob to manipulate static phase transitions, pointing towards new pathways for nonvolatile optoelectronic devices and sensors.

The In Situ Optimization of Spinterface in Polymer Spin Valve by Electronic Phase Separated Oxides

Tailoring the interface between organic semiconductor (OSC) and ferromagnetic (FM) electrodes, that is, the spinterface, offers a promising way to manipulate and optimize the magnetoresistance (MR) ratio of the organic spin valve (OSV) devices. However, the non-destructive in situ regulation method of spinterface is seldom reported, limiting its theoretical research and further application in organic spintronics. (La2/3 Pr1/3 )5/8 Ca3/8 MnO3 (LPCMO), a recently developed FM material, exhibits a strong electronic phase separation (EPS) property, and can be employed as an effective in situ spinterface adjuster. Herein, we fabricated a LPCMO-based polymer spin valve with a vertical configuration of LPCMO/poly(3-hexylthiophene-2,5-diyl) (P3HT)/Co, and emphasized the important role of LPCMO/P3HT spinterface in MR regulation. A unique competitive spin-scattering mechanism generated by the EPS characteristics of LPCMO inside the polymer spin valve was discovered by abstracting the anomalous non-monotonic MR value as a function of pre-set magnetic field (Bpre ) and temperature (T). Particularly, a record-high MR ratio of 93% was achieved in polymer spin valves under optimal conditions. These findings highlight the importance of interdisciplinary research between organic spintronics and EPS oxides and offer a novel scenario for multi-level storage via spinterface manipulation.

Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates

Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO₃ has an itinerant ferromagnetism with a low-spin state. However, the phase of intermediate-spin (IS) ferromagnetic metallic state has never been seen. Here, by means of UV-light irradiation, a photocarrier-doping-induced Mott-insulator-to-metal phase transition is shown in a few atomic layers of perovskite IS ferromagnetic SrRuO_{3- δ} . This new metastable IS metallic phase can be reversibly regulated due to the convenient photocharge transfer from SrTiO₃ substrates to SrRuO_{3- δ} ultrathin films. These dynamical mean-field theory calculations further verify such photoinduced electronic phase transformation, owing to oxygen vacancies and orbital reconstruction. The optical manipulation of charge-transfer finesse is an alternative pathway toward discovering novel metastable phases in strongly correlated systems and facilitates potential light-controlled device applications in optoelectronics and spintronics.

Discovery of mesoscopic nematicity wave in iron-based superconductors

[Figure: see text].

Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film

The demand for terahertz (THz) communication and detection fuels continuous research for high performance of THz absorption materials. In addition to varying the materials and their structure passively, an alternative approach is to modulate a THz wave actively by tuning an external stimulus. Correlated oxides are ideal materials for this because the effects of a small external control parameter can be amplified by inner electronic correlations. Here, by utilizing an unpatterned strongly correlated electron oxide VO₂ thin film, a photoinduced broad-band tunable THz absorber is realized first. The absorption, transmission, reflection, and phase of THz waves can all be actively controlled by an external pump laser above room temperature. By varying the laser fluence, the average broad-band absorption can be tuned from 18.9 to 74.7% and the average transmission can be tuned from 9.2 to 69.2%. Meanwhile, a broad-band antireflection is obtained at 5.6 mJ/cm², and a π-phase shift of a reflected THz wave is achieved when the fluence increases greater than 5.7 mJ/cm². Apart from other modulators, the photoexcitation-assisted dual-phase competition is identified as the origin of this active THz multifunctional modulation. Our work suggests that advantages of controllable phase separation in strongly correlated electron systems could provide viable routes in the creation of active optical components for THz waves.